KR101821424B1 - 플라즈마 프로세싱 시스템에서 플라즈마의 한정 상태를 검출하는 방법 및 장치 - Google Patents

플라즈마 프로세싱 시스템에서 플라즈마의 한정 상태를 검출하는 방법 및 장치 Download PDF

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KR101821424B1
KR101821424B1 KR1020127012991A KR20127012991A KR101821424B1 KR 101821424 B1 KR101821424 B1 KR 101821424B1 KR 1020127012991 A KR1020127012991 A KR 1020127012991A KR 20127012991 A KR20127012991 A KR 20127012991A KR 101821424 B1 KR101821424 B1 KR 101821424B1
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KR20120097504A (ko
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존 씨 주니어 발코어
제임스 로저스
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/62—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosols; by investigating electric discharges, e.g. emission of cathode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020127012991A 2009-11-19 2010-11-19 플라즈마 프로세싱 시스템에서 플라즈마의 한정 상태를 검출하는 방법 및 장치 Active KR101821424B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US26288609P 2009-11-19 2009-11-19
US61/262,886 2009-11-19
US30362810P 2010-02-11 2010-02-11
US61/303,628 2010-02-11
US12/907,859 US8901935B2 (en) 2009-11-19 2010-10-19 Methods and apparatus for detecting the confinement state of plasma in a plasma processing system
US12/907,859 2010-10-19
PCT/US2010/057478 WO2011063262A2 (en) 2009-11-19 2010-11-19 Methods and apparatus for detecting the confinement state of plasma in a plasma processing system

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KR20120097504A KR20120097504A (ko) 2012-09-04
KR101821424B1 true KR101821424B1 (ko) 2018-01-23

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US (1) US8901935B2 (https=)
JP (1) JP5837503B2 (https=)
KR (1) KR101821424B1 (https=)
CN (1) CN102612738B (https=)
SG (1) SG10201406957PA (https=)
TW (1) TWI529844B (https=)
WO (1) WO2011063262A2 (https=)

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US20110115492A1 (en) 2011-05-19
CN102612738B (zh) 2016-01-06
JP2013511815A (ja) 2013-04-04
TWI529844B (zh) 2016-04-11
US8901935B2 (en) 2014-12-02
SG10201406957PA (en) 2014-12-30
CN102612738A (zh) 2012-07-25
KR20120097504A (ko) 2012-09-04
WO2011063262A3 (en) 2011-09-22
TW201126642A (en) 2011-08-01
JP5837503B2 (ja) 2015-12-24
WO2011063262A2 (en) 2011-05-26

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