SG10201406957PA - Methods and apparatus for detecting the confinement state of plasma in a plasma processing system - Google Patents

Methods and apparatus for detecting the confinement state of plasma in a plasma processing system

Info

Publication number
SG10201406957PA
SG10201406957PA SG10201406957PA SG10201406957PA SG10201406957PA SG 10201406957P A SG10201406957P A SG 10201406957PA SG 10201406957P A SG10201406957P A SG 10201406957PA SG 10201406957P A SG10201406957P A SG 10201406957PA SG 10201406957P A SG10201406957P A SG 10201406957PA
Authority
SG
Singapore
Prior art keywords
plasma
detecting
methods
state
esc
Prior art date
Application number
SG10201406957PA
Other languages
English (en)
Inventor
Jr John C Valcore
James Rogers
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201406957PA publication Critical patent/SG10201406957PA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/62—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosols; by investigating electric discharges, e.g. emission of cathode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
SG10201406957PA 2009-11-19 2010-11-19 Methods and apparatus for detecting the confinement state of plasma in a plasma processing system SG10201406957PA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US26288609P 2009-11-19 2009-11-19
US30362810P 2010-02-11 2010-02-11
US12/907,859 US8901935B2 (en) 2009-11-19 2010-10-19 Methods and apparatus for detecting the confinement state of plasma in a plasma processing system

Publications (1)

Publication Number Publication Date
SG10201406957PA true SG10201406957PA (en) 2014-12-30

Family

ID=46319942

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201406957PA SG10201406957PA (en) 2009-11-19 2010-11-19 Methods and apparatus for detecting the confinement state of plasma in a plasma processing system

Country Status (7)

Country Link
US (1) US8901935B2 (https=)
JP (1) JP5837503B2 (https=)
KR (1) KR101821424B1 (https=)
CN (1) CN102612738B (https=)
SG (1) SG10201406957PA (https=)
TW (1) TWI529844B (https=)
WO (1) WO2011063262A2 (https=)

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Also Published As

Publication number Publication date
US20110115492A1 (en) 2011-05-19
CN102612738B (zh) 2016-01-06
JP2013511815A (ja) 2013-04-04
TWI529844B (zh) 2016-04-11
US8901935B2 (en) 2014-12-02
CN102612738A (zh) 2012-07-25
KR20120097504A (ko) 2012-09-04
KR101821424B1 (ko) 2018-01-23
WO2011063262A3 (en) 2011-09-22
TW201126642A (en) 2011-08-01
JP5837503B2 (ja) 2015-12-24
WO2011063262A2 (en) 2011-05-26

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