KR101816838B1 - Replica mold for nano imprint, manufacturing method and equipment thereof - Google Patents

Replica mold for nano imprint, manufacturing method and equipment thereof Download PDF

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Publication number
KR101816838B1
KR101816838B1 KR1020160086614A KR20160086614A KR101816838B1 KR 101816838 B1 KR101816838 B1 KR 101816838B1 KR 1020160086614 A KR1020160086614 A KR 1020160086614A KR 20160086614 A KR20160086614 A KR 20160086614A KR 101816838 B1 KR101816838 B1 KR 101816838B1
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South Korea
Prior art keywords
mold
pattern
transfer
nanoimprint
replica mold
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KR1020160086614A
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Korean (ko)
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권상민
구자붕
구황섭
김현제
정희석
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주식회사 기가레인
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Priority to KR1020160086614A priority Critical patent/KR101816838B1/en
Priority to TW106122628A priority patent/TWI693141B/en
Priority to PCT/KR2017/007306 priority patent/WO2018009026A1/en
Priority to CN201780029355.5A priority patent/CN109073979A/en
Priority to JP2018562675A priority patent/JP2019519108A/en
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Publication of KR101816838B1 publication Critical patent/KR101816838B1/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00Moulds or cores; Details thereof or accessories therefor
    • B29C33/56Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
    • B29C33/60Releasing, lubricating or separating agents
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/161Coating processes; Apparatus therefor using a previously coated surface, e.g. by stamping or by transfer lamination
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0888Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using transparant moulds
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/021Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2012Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
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  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
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  • Oral & Maxillofacial Surgery (AREA)
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  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

Disclosed are a replica mold for nanoimprint, a manufacturing method thereof and a device for manufacturing a replica mold for nanoimprint. The replica mold for nanoimprint comprises: a base made of a plastic film; a transfer unit formed on the base; and a guide film which is formed on the base to be separable, which has hollow parts so that the transfer unit is exposed and in which particles cured as the outer circumference surface of the transfer unit spreads are formed. The transfer unit is made of resins and has a concave pattern.

Description

나노 임프린트용 레플리카 몰드, 그 제조방법 및 나노 임프린트용 레플리카 몰드 제조장치{Replica mold for nano imprint, manufacturing method and equipment thereof}Technical Field [0001] The present invention relates to a replica mold for a nanoimprint, a manufacturing method thereof, and a replica mold for nano imprint,

본 발명은 나노 임프린트용 레플리카 몰드, 그 제조방법 및 나노 임프린트용 레플리카 몰드 제조장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a replica mold for a nanoimprint, a method of manufacturing the same, and an apparatus for manufacturing a replica mold for a nanoimprint.

나노 임프린트 공정은 포토레지스트(photoresist)를 노광(expose) 및 현상(develop)하여 기판(substrate) 상부에 패턴(pattern)을 형성하는 포토 리소그래피공정(photo lithography process)을 대체하는 기술로서, 패턴이 형성된 스탬프 몰드를 기판 상부의 레진에 전사(stamping)하여 기판 상부에 패턴을 형성하는 공정이다.The nanoimprint process replaces the photo lithography process, which exposes and develops photoresist to form a pattern on the substrate. The nanoimprint process replaces the photolithography process, Stamping the stamp mold onto the resin on the substrate to form a pattern on the substrate.

이때, 나노 임프린트 공정에 사용되는 스탬프 몰드의 패턴은 레플리카 몰드의 패턴에 전사되어 형성된다.At this time, the pattern of the stamp mold used in the nanoimprint process is transferred and formed on the pattern of the replica mold.

도 1에 도시된 바와 같이, 일반적으로 패턴(PT)이 형성된 레플리카 몰드(1)가 부착된 롤투롤(roll to roll) 장비의 롤(5)을 스탬프 몰드(2)가 통과하면서 레플리카 몰드(1)의 패턴(PT)이 스탬프 몰드(2)에 전사되어 스탬프 몰드(2)에 패턴(PT)이 형성되는바, 도 2에 도시된 바와 같이, 패턴(PT)은 레플리카 몰드(1), 스탬프 몰드(2) 및 기판(3)에 순차적으로 전사되어 형성되는 것이다.1, a roll 5 of a roll-to-roll machine, to which a replica mold 1 having a pattern PT formed in general, is attached to the replica mold 1 The pattern PT of the stamp 1 is transferred to the stamp mold 2 and the pattern PT is formed on the stamp mold 2. As shown in Fig. 2, the pattern PT includes the replica mold 1, And transferred to the mold 2 and the substrate 3 one after another.

그러나, 종래의 레플리카 몰드(1)는 니켈(Ni), 구리(Cu) 등 금속 재질로 형성되므로 패턴의 정밀도가 낮고, 제조 공정이 복잡하며, 제조 단가가 높은 문제점이 있었다.However, since the conventional replica mold 1 is made of metal such as nickel (Ni) and copper (Cu), the pattern precision is low, the manufacturing process is complicated, and the manufacturing cost is high.

상기한 배경기술로서 설명된 사항들은 본 발명의 배경에 대한 이해 증진을 위한 것일 뿐, 이 기술분야에서 통상의 지식을 가진 자에게 이미 알려진 종래기술에 해당함을 인정하는 것으로 받아들여져서는 안 될 것이다.It should be understood that the foregoing description of the background art is merely for the purpose of promoting an understanding of the background of the present invention and is not to be construed as adhering to the prior art already known to those skilled in the art.

KR 10-2012-0127731(2012.11.23)KR 10-2012-0127731 (November 23, 2012)

본 발명은 레진으로 형성되어 패턴의 정밀도가 높고, 제조 공정이 단순하며, 제조 단가가 낮은 나노 임프린트용 레플리카 몰드, 그 제조방법 및 나노 임프린트용 레플리카 몰드 제조장치를 제공하는데 그 목적이 있다.An object of the present invention is to provide a replica mold for a nanoimprint which is formed of a resin and has high pattern precision, a simple manufacturing process, and a low manufacturing cost, a method of manufacturing the same, and an apparatus for producing a replica mold for a nanoimprint.

이러한 목적을 달성하기 위한 본 발명의 나노 임프린트용 레플리카 몰드는, 플라스틱 필름으로 형성된 베이스; 상기 베이스에 형성된 전사부; 및 상기 베이스에 분리 가능하게 형성되고, 상기 전사부가 노출될 수 있도록 중공이 형성되며, 상기 전사부의 외주면이 번져서 경화되어 형성된 파티클이 형성되는 가이드 필름을 포함하고, 상기 전사부는 레진으로 형성되고, 요철 형상의 패턴이 형성된다.To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described herein, a nanoimprint replica mold includes: a base formed of a plastic film; A transfer unit formed on the base; And a guide film detachably formed on the base, the guide film being formed with a hollow to expose the transfer portion and formed with particles formed by curing the outer circumferential surface of the transfer portion, wherein the transfer portion is formed of resin, A pattern of a shape is formed.

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이러한 목적을 달성하기 위한 본 발명의 나노 임프린트용 레플리카 몰드는, 플라스틱 필름으로 형성된 베이스; 상기 베이스에 형성된 전사부; 및 상기 베이스에 분리 가능하게 형성되고, 상기 전사부가 노출될 수 있도록 중공이 형성되며, 상기 전사부의 외주면이 번져서 경화되어 형성된 파티클이 형성되는 가이드 필름을 포함하고, 상기 전사부는, 상기 가이드 필름에 형성된 중공에 레진을 충진하여 형성된 것을 특징으로 한다.To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described herein, a nanoimprint replica mold includes: a base formed of a plastic film; A transfer unit formed on the base; And a guide film detachably formed on the base, wherein a hollow is formed to expose the transfer portion, and a particle formed by curing the outer circumferential surface of the transfer portion is formed, and the transfer portion is formed on the guide film And the cavity is filled with a resin.

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상기 베이스의 일면에는 탄성을 갖는 쿠션층이 형성되는 것이 바람직하다.And a cushion layer having elasticity is formed on one surface of the base.

이러한 목적을 달성하기 위한 본 발명의 나노 임프린트용 레플리카 몰드 제조장치는, 베이스에 분리 가능하게 형성되고, 상기 베이스에 형성되는 전사부가 노출될 수 있도록 중공이 형성되며, 상기 전사부의 외주면이 번져서 경화되어 형성된 파티클이 형성되는 가이드 필름의 중공에 레진을 충진하여 상기 전사부를 형성하는 충진부; 일측에 마스터 몰드가 부착되고, 상기 마스터 몰드를 상하로 승강시켜 상기 마스터 몰드의 패턴을 상기 전사부에 전사시키는 가압부; 및 상기 가압부 방향으로 광을 조사하는 조사부를 포함한다.In order to achieve the above object, the present invention provides an apparatus for producing a replica mold for a nanoimprint, comprising: a base detachably formed on a base, a hollow being formed to expose a transfer portion formed on the base, A filling part for filling the hollow of the guide film on which the formed particles are formed with the resin to form the transfer part; A pressing part for attaching a master mold to one side and raising and lowering the master mold to transfer the pattern of the master mold to the transfer part; And an irradiating unit for irradiating light in the direction of the pressing unit.

이러한 목적을 달성하기 위한 본 발명의 나노 임프린트용 레플리카 몰드 제조방법은, 베이스에 분리 가능하게 형성되고, 상기 베이스에 형성되는 전사부가 노출될 수 있도록 중공이 형성되며, 상기 전사부의 외주면이 번져서 경화되어 형성된 파티클이 형성되는 가이드 필름의 중공에 레진을 충진하여 상기 전사부를 형성하는 충진단계; 상기 전사부로 마스터 몰드를 이동시키고, 상기 마스터 몰드를 가압하여 패턴을 형성하는 패턴 형성단계; 상기 전사부에 광을 조사하여 상기 전사부를 경화하는 경화단계; 및 상기 가이드 필름을 제거하는 제거단계를 포함한다.In order to accomplish the above object, there is provided a method of manufacturing a replica mold for a nanoimprint according to the present invention, comprising the steps of: forming a hollow on a base to expose a transfer portion formed on the base; A filling step of filling the hollow of the guide film on which the formed particles are formed with the resin to form the transfer part; A pattern forming step of moving the master mold to the transfer portion and pressing the master mold to form a pattern; A curing step of curing the transfer part by irradiating light to the transfer part; And a removing step of removing the guide film.

본 발명에 따르면 아래와 같은 다양한 효과를 구현할 수 있게 된다.According to the present invention, the following various effects can be realized.

첫째, 패턴의 정밀도가 개선되는 이점이 있다.First, there is an advantage that the precision of the pattern is improved.

둘째, 제조 공정이 단순한 이점이 있다.Second, there is a simple merit in the manufacturing process.

셋째, 제조 단가가 낮은 이점이 있다.Third, the manufacturing cost is low.

도 1은 롤투롤 장비의 구성도,
도 2는 레플리카 몰드, 스탬프 몰드, 기판의 패턴 형성 순서도,
도 3은 본 발명의 나노 임프린트용 레플리카 몰드의 구성도,
도 4는 본 발명의 나노 임프린트용 레플리카 몰드에 대한 다른 실시예의 구성도,
도 5는 본 발명의 나노 임프린트용 레플리카 몰드의 파티클 제거에 대한 구성도,
도 6은 본 발명의 나노 임프린트용 레플리카 몰드의 파티클 제거에 대한 평면도를 나타낸 도면이다.
1 is a block diagram of a roll-to-
2 is a flowchart showing a pattern formation sequence of a replica mold, a stamp mold,
3 is a schematic view of a replica mold for a nanoimprint of the present invention,
4 is a configuration diagram of another embodiment of the nanoimprint replica mold of the present invention,
FIG. 5 is a view showing a structure for removing particles of a replica mold for a nanoimprint of the present invention,
FIG. 6 is a plan view showing the particle removal of the nanoimprint replica mold of the present invention.

본 발명의 목적, 특정한 장점들 및 신규한 특징들은 첨부된 도면들과 연관되는 이하의 상세한 설명과 실시 예로부터 더욱 명백해질 것이다. 본 명세서에서 각 도면의 구성 요소들에 참조 번호를 부가함에 있어서, 동일한 구성 요소들에 한해서는 비록 다른 도면 상에 표시되더라도 가능한 한 동일한 번호를 가지도록 하고 있음에 유의하여야 한다. 또한, 제1, 제2 등의 용어는 다양한 구성 요소들을 설명하는데 사용될 수 있지만, 상기 구성 요소들은 상기 용어들에 의해 한정되어서는 안 된다. 상기 용어들은 하나의 구성 요소를 다른 구성요소로부터 구별하는 목적으로만 사용된다. 또한, 본 발명을 설명함에 있어서, 관련된 공지기술에 대한 구체적인 설명이 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단되는 경우 그 상세한 설명은 생략한다.The objects, particular advantages and novel features of the present invention will become more apparent from the following detailed description and examples taken in conjunction with the accompanying drawings. It should be noted that, in the present specification, the reference numerals are added to the constituent elements of the drawings, and the same constituent elements are assigned the same number as much as possible even if they are displayed on different drawings. Also, the terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail.

도 3에 도시된 바와 같이, 본 발명의 나노 임프린트용 레플리카 몰드는, 베이스(10) 및 베이스(10)에 형성되는 전사부(20)를 포함한다.3, the replica mold for nanoimprinting of the present invention includes a base 10 and a transfer portion 20 formed on the base 10.

베이스(10)는 전사부(20)를 지지하는 기능을 하는 것으로, 기판(substrate), 필름(film) 등으로 형성될 수 있는바, 필름(film) 중에서도 플라스틱 필름이 사용될 수 있으며, 본 발명자는 플라스틱 필름의 한 종류인 PET 필름(Polyethylene phthalate film)을 베이스(10)로 사용하였다.The base 10 serves to support the transfer unit 20 and may be formed of a substrate or a film. Among the films, a plastic film may be used. A PET film (polyethylene phthalate film), which is one type of plastic film, was used as the base 10.

전사부(20)는 레진(resin)으로 형성되며, 후속 공정을 위하여 자외선(ultraviolet, UV), 전자선(electron beam, EB) 등 광(light)에 의해 경화되는 광경화성 레진(light curable resin)으로 형성하는 것이 바람직하다.The transfer part 20 is formed of a resin and is a light curable resin that is cured by light such as ultraviolet (UV), electron beam (EB) .

전사부(20)는 원형으로 형성될 수 있는바, 전사부(20)는 마스터 몰드에 의해 전사(stamping)되어 마스터 몰드에 형성된 패턴(pattern)에 대응되는 패턴이 형성된다. 즉, 마스터 몰드의 일면에 형성된 요철 형상의 패턴이 전사(stamping)되어 전사부(20)에 상술한 마스터 몰드의 패턴과 대응되는 요철 형상의 패턴이 형성되는바, 마스터 몰드의 패턴과 반대되는 패턴이 레플리카 몰드에 형성되는 것이다.The transfer portion 20 may be formed in a circular shape. The transfer portion 20 is stamped by a master mold to form a pattern corresponding to a pattern formed on the master mold. That is, the concavo-convex pattern formed on one side of the master mold is stamped, so that the concave-convex pattern corresponding to the pattern of the master mold described above is formed on the transfer section 20. As a result, Is formed in the replica mold.

예를 들어, 마스터 몰드에 형성된 凹 형상의 패턴이 레플리카 몰드에 전사되는 경우, 레플리카 몰드의 전사부(20)에 凹 형상의 패턴과 반대되는 凸 형상의 패턴이 형성되고, 레플리카 몰드의 전사부(20)에 형성된 凸 형상의 패턴이 스탬프 몰드에 전사되어 스탬프 몰드에 凹 형상의 패턴이 형성되며, 스탬프 몰드에 형성된 凹 형상의 패턴이 기판에 전사되어 기판에 凸 형상의 패턴이 형성된다.For example, when the concave pattern formed on the master mold is transferred to the replica mold, a convex pattern opposite to the concave pattern is formed on the transfer portion 20 of the replica mold, and the transfer portion 20 are transferred to the stamp mold to form a concave pattern on the stamp mold, and a concave pattern formed on the stamp mold is transferred to the substrate to form a convex pattern on the substrate.

레플리카 몰드의 패턴은 스탬프 몰드에 전사되고, 스탬프 몰드의 패턴은 기판에 전사되므로, 레플리카 몰드 및 기판의 패턴은 동일하게 형성되고, 스탬프 몰드의 패턴과는 반대되는 형상으로 형성된다.Since the pattern of the replica mold is transferred to the stamp mold and the pattern of the stamp mold is transferred to the substrate, the patterns of the replica mold and the substrate are formed in the same manner and opposite to the pattern of the stamp mold.

한편, 마스터 몰드는 실리콘 웨이퍼(Si wafer), 석영(quartz) 등 일 수 있다.Meanwhile, the master mold may be a silicon wafer, quartz, or the like.

이와 같이, 레플리카 몰드는 니켈, 구리 등 금속이 아닌 레진으로 형성되므로 패턴의 정밀도가 개선되는 이점이 있다.As described above, since the replica mold is formed of resin other than metal such as nickel or copper, the pattern accuracy is improved.

또한, 종래의 레플리카 몰드는 니켈, 구리 등 금속을 전기 도금하는 방식으로 제조되는 반면, 본 발명의 레플리카 몰드는 전사를 통해 형성되므로 제조공정이 단순해지고, 생산 속도가 개선되며, 제조 단가가 낮아지는 이점을 갖는다. In addition, since the conventional replica mold is manufactured by electroplating a metal such as nickel or copper, the replica mold of the present invention is formed through transfer, so that the manufacturing process is simplified, the production speed is improved, .

도 4 내지 도 6에 도시된 바와 같이, 본 발명의 나노 임프린트용 레플리카 몰드는, 베이스(10), 전사부(20), 가이드 필름(30), 쿠션층(40)을 포함한다.4 to 6, the nanoimprint replica mold of the present invention includes a base 10, a transfer portion 20, a guide film 30, and a cushion layer 40.

마스터 몰드를 레플리카 몰드에 전사할 때, 레플리카 몰드의 전사부(20) 외주면이 번져 파티클(P)이 형성될 수 있다. 즉, 전사되기 전 전사부(20)의 외주면보다 전사된 후 전사부(20)의 외주면이 확장되어 번지면서, 번진 부분이 경화되어 파티클(P)이 형성되는 것이다.When the master mold is transferred to the replica mold, the outer peripheral surface of the transfer portion 20 of the replica mold spreads and the particles P can be formed. That is, the outer circumferential surface of the transfer portion 20 is expanded and spread after being transferred from the outer circumferential surface of the transfer portion 20 before transferring, and the projected portion is hardened to form the particles P.

파티클(P)이 형성된 레플리카 몰드가 스탬프 몰드에 전사되면, 스탬프 몰드의 패턴이 손상되어 불량이 발생하는 문제점이 있다.When the replica mold on which the particles P are formed is transferred to the stamp mold, the pattern of the stamp mold is damaged and defects are generated.

따라서, 스탬프 몰드의 패턴 손상 방지를 위해 레플리카 몰드의 전사부(20)의 파티클(P) 형성을 방지하거나, 제거하는 것은 매우 중요한 요소이다.Therefore, it is very important to prevent or eliminate the formation of particles (P) in the transfer portion 20 of the replica mold in order to prevent damage to the pattern of the stamp mold.

본 발명에서는 전사부(20)에 형성되는 파티클(P) 제거를 위해 가이드 필름(30)을 도입하였다. 즉, 베이스(10)에 전사부(20)와 대응되는 중공이 형성된 가이드 필름(30)을 위치시킴으로써, 전사부(20) 외주면에 파티클(P)이 형성되는 것을 방지하였다.In the present invention, a guide film (30) is introduced to remove particles (P) formed on the transfer portion (20). That is, the guide film 30 having the hollow corresponding to the transfer unit 20 is positioned on the base 10, thereby preventing the particles P from being formed on the outer circumferential surface of the transfer unit 20.

이하에서는 가이드 필름(30)에 대하여 상세히 설명한다.Hereinafter, the guide film 30 will be described in detail.

도 5 및 도 6에 도시된 바와 같이, 가이드 필름(30)에는 전사부(20)와 대응되는 형상의 중공이 형성된다. 전사부(20)가 원형인 경우, 가이드 필름(30)의 중공 역시 이와 대응될 수 있도록 원형으로 형성된다.As shown in FIGS. 5 and 6, the guide film 30 has a hollow shape corresponding to the transfer portion 20. When the transfer portion 20 is circular, the hollow of the guide film 30 is also formed in a circular shape so as to correspond to the hollow portion.

따라서, 중공을 통해 전사부(20)가 외부로 노출되고, 마스터 몰드를 레플리카 몰드에 전사할 때, 파티클(P)은 전사부(20)의 외주면이 아닌 가이드 필름(30) 상에 형성된다The particles P are formed on the guide film 30 rather than the outer peripheral surface of the transfer section 20 when the transfer section 20 is exposed to the outside through the hollow and the master mold is transferred to the replica mold

이후, 가이드 필름(30)을 제거하면 간단하게 가이드 필름(30)에 형성된 파티클(P)도 함께 제거할 수 있게 된다.Thereafter, when the guide film 30 is removed, the particles P formed on the guide film 30 can be removed together.

이와 같이, 가이드 필름(30)을 이용하여 파티클(P)을 제거함으로써, 레플리카 몰드를 스탬프 몰드에 전사할 때, 전사부(20)에 파티클(P)이 형성되는 것을 방지할 수 있는바, 스탬프 몰드 패턴 손상 내지 불량 발생을 방지할 수 있게 된다.As described above, by removing the particles P by using the guide film 30, it is possible to prevent the particles P from being formed on the transfer portion 20 when the replica mold is transferred to the stamp mold, It is possible to prevent damage to the mold pattern or occurrence of defects.

한편, 레플리카 몰드를 스탬프 몰드에 전사하기 위해서 레플리카 몰드를 롤투롤 장비의 롤 또는 압착 장비의 기판에 부착하는데, 레플리카 몰드가 부착되는 롤 또는 기판의 면이 불균일하거나, 파티클 등이 존재하면, 두께가 얇은 베이스(10)를 통해 레진 재질로 형성된 전사부(20)가 영향을 받기 때문에, 스탬프 몰드에 전사 시 패턴을 손상시켜 불량이 발생하는 문제점이 있다.On the other hand, in order to transfer the replica mold to the stamp mold, the replica mold is attached to the roll of the roll-to-roll equipment or the substrate of the press-bonding equipment. When the surface of the roll or substrate to which the replica mold is attached is uneven, Since the transfer portion 20 formed of a resin material is influenced through the thin base 10, there is a problem that the pattern is damaged at the time of transfer to the stamp mold, thereby causing defects.

본 발명에서는 베이스(10)에 쿠션층(40)을 형성하여 전사 시 레플리카 몰드의 전사부(20)가 영향을 받는 것을 방지하였다. 즉, 전사부(20)가 형성된 베이스(10)의 일면과 반대되는 이면에 탄성을 갖는 쿠션층(40)을 형성함으로써, 상술한 문제점을 해결한 것이다.In the present invention, the cushion layer 40 is formed on the base 10 to prevent the transfer portion 20 of the replica mold from being affected during transfer. That is, the above-described problem is solved by forming the cushion layer 40 having elasticity on the back surface opposite to the one surface of the base 10 on which the transfer portion 20 is formed.

쿠션층(40)은 베이스(10)보다 얇고, 가이드 필름(30)보다 두껍게 형성되는 것이 바람직하고, 쿠션층(40)의 일면에는 중공이 형성되지 않은 가이드 필름이 부착될 수 있다. The cushion layer 40 is preferably thinner than the base 10 and thicker than the guide film 30. A guide film having no hollow may be attached to one surface of the cushion layer 40. [

또한 쿠션층(40)은 실리콘(Si)일 수 있고, 베이스(10)에 코팅하여 형성될 수 있다.The cushion layer 40 may be made of silicon (Si) and may be formed by coating the base 10.

본 발명의 나노 임프린트용 레플리카 몰드에 따르면, 레플리카 몰드가 부착되는 롤 또는 기판의 면이 불균일하거나, 파티클 등이 존재하더라도, 탄성을 갖는 쿠션층(40)이 롤 또는 기판으로부터 전해지는 불균일한 압력을 완화해주기 때문에, 불균일한 압력이 베이스(10)를 통해 전사부(20)로 전달되어 전사부(20)가 영향을 받는 것을 방지할 수 있게 된다.According to the replica mold for nanoimprinting of the present invention, even when the surface of the roll or substrate to which the replica mold is attached is uneven or particles or the like are present, the cushion layer 40 having elasticity is not subjected to uneven pressure transmitted from the roll or the substrate It is possible to prevent uneven pressure from being transmitted to the transferring unit 20 through the base 10 and the transferring unit 20 being affected.

이하에서는 본 발명의 나노 임프린트용 레플리카 몰드 제조장치에 대하여 설명한다.Hereinafter, an apparatus for producing a replica mold for a nanoimprint of the present invention will be described.

본 발명의 나노 임프린트용 레플리카 몰드 제조장치는, 충진부, 가압부, 조사부를 포함한다.The nanoimprint replica mold manufacturing apparatus of the present invention includes a filling section, a pressing section, and an irradiating section.

충진부는 베이스(10)에 전사부(20)를 충진하는데, 베이스(10)에 중공이 형성된 가이드 필름(30)이 존재하는 경우에는 가이드 필름(30)의 중공에 전사부(20)을 충진한다.The filling part fills the transfer part 20 with the base 10. When the guide film 30 having a hollow is present in the base 10, the transfer part 20 is filled in the hollow of the guide film 30 .

이러한 충진부는 스핀 코팅(spin coating) 방식으로 전사부(20)를 충진할 수 있는바, 전사부(20)를 도포하는 노즐 및 전사부(20)를 회전시키는 모터를 포함할 수 있다.Such a filling part can fill the transfer part 20 by a spin coating method and may include a nozzle for applying the transfer part 20 and a motor for rotating the transfer part 20. [

가압부는 상하 작동 가능한 실린더(cylinder), 리니어 모터(linear motor) 등을 포함하고, 그 일면에는 마스터 몰드가 부착된다. 마스터 몰드가 가압부와 연동되어 승강되므로 마스터 몰드의 패턴이 전사부(20)에 전사되어 패턴이 형성된다.The pressing portion includes a vertically actuable cylinder, a linear motor and the like, and a master mold is attached to one surface of the cylinder. Since the master mold is moved up and down in conjunction with the pressing portion, the pattern of the master mold is transferred to the transfer portion 20 to form a pattern.

조사부에서는 가압부 방향으로 자외선, 전자선 등 광을 조사한다. 즉, 가압부에 위치하는 전사부(20)에 자외선, 전자선 등 광을 조사하여 전사부(20)를 경화하는 것이다.The irradiating unit irradiates light such as ultraviolet rays or electron rays toward the pressurizing portion. That is, the transfer section 20 located in the pressing section is irradiated with light such as ultraviolet rays or electron beams to cure the transfer section 20. [

상술한 나노 임프린트용 레플리카 몰드 제조장치에 의해 레플리카 몰드를 제조하는 과정을 간략하게 설명한다.The process of producing the replica mold by the above-described apparatus for producing a replica mold for nano imprint will be briefly described.

본 발명의 나노 임프린트용 레플리카 몰드 제조방법은, 가이드 필름(30)에 형성된 중공에 전사부(20)를 충진하는 충진단계, 전사부(20)에 마스터 몰드를 가압하여 패턴을 형성하는 패턴 형성단계, 전사부(20)에 자외선, 전자선 등 광을 조사하여 전사부를 경화(20)하는 경화단계, 가이드 필름(30)을 제거하는 제거단계를 포함한다.The method for producing a nanoimprint replica mold according to the present invention comprises the steps of filling a hollow portion formed in a guide film (30) with a transfer portion (20), forming a pattern by pressing a master mold on a transfer portion A curing step of irradiating the transfer portion 20 with light such as ultraviolet rays or electron rays to cure the transfer portion 20, and removing the guide film 30.

충진단계는 가이드 필름(30)에 전사부(20)를 도포하는 도포단계와 전사부(20)를 회전하는 회전단계 및 전사부(20)를 건조하는 베이킹 단계를 포함한다.The filling step includes an applying step of applying the transferring section 20 to the guide film 30, a rotating step of rotating the transferring section 20, and a baking step of drying the transferring section 20.

한편, 경화단계의 시작은 패턴 형성단계의 전사부(20)에 마스터 몰드가 가압되기 전, 가압되는 중, 가압되는 후 중 어느 하나부터 시작될 수 있다.On the other hand, the start of the curing step may be started before the master mold is pressurized, during the pressurization, or after the pressurization, to the transferring portion 20 of the pattern forming step.

이상 본 발명을 구체적인 실시 예를 통하여 상세히 설명하였으나, 이는 본 발명을 구체적으로 설명하기 위한 것으로, 본 발명에 따른 설명에 한정되지 않으며, 본 발명의 기술적 사상 내에서 당해 분야의 통상의 지식을 가진 자에 의해 그 변형이나 개량이 가능함은 명백하다고 할 것이다.While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, the same is by way of illustration and example only and is not to be construed as limiting the present invention. It is apparent that the present invention can be modified or improved in various ways.

본 발명의 단순한 변형 내지 변경은 모두 본 발명의 영역에 속하는 것으로 본 발명의 구체적인 보호범위는 첨부된 특허청구범위에 의하여 명확해 질 것이다.It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

10 : 베이스 20 : 전사부
30 : 가이드 필름 40 : 쿠션층
10: Base 20: Transfer part
30: guide film 40: cushion layer

Claims (8)

마스터 몰드로부터 패턴이 전사되고, 기판에 패턴을 형성시키는 스템프 몰드에 상기 패턴을 전사시키는 나노 임프린트용 레플리카 몰드로서,
플라스틱 필름으로 형성된 베이스;
중공을 구비하고, 상기 베이스 상에 형성되는 가이드 필름; 및
상기 중공에 레진이 충진되고, 상기 마스터 몰드의 가압에 의하여 상기 패턴이 전사되는 전사부;를 포함하고,
상기 마스터 몰드로부터 패턴 전사시에 상기 전사부 외주면으로 번진 부분이 경화되어 형성되는 파티클을 제거하도록, 상기 가이드 필름은 상기 베이스로부터 분리 가능하게 형성되는 것을 특징으로 하는, 나노 임프린트용 레플리카 몰드.
1. A nanoimprint replica mold for transferring a pattern from a master mold to a stamp mold for forming a pattern on a substrate,
A base formed of a plastic film;
A guide film having a hollow and formed on the base; And
And a transfer part in which the hollow is filled with a resin and the pattern is transferred by pressing of the master mold,
Wherein the guide film is detachably formed from the base so as to remove particles formed by hardening a portion of the master mold that is bent to the outer peripheral surface of the transfer portion during pattern transfer.
삭제delete 삭제delete 삭제delete 삭제delete 청구항 1에 있어서,
상기 베이스의 일면에는 탄성을 갖는 쿠션층이 형성된 것을 특징으로 하는,
나노 임프린트용 레플리카 몰드.
The method according to claim 1,
And a cushion layer having elasticity is formed on one surface of the base.
Replica mold for nanoimprint.
청구항 1의 나노 임프린트용 레플리카 몰드를 이용한 나노 임프린트용 레플리카 몰드 제조장치로서,
상기 가이드 필름의 중공에 레진을 충진하여 상기 전사부를 형성하는 충진부;
일측에 마스터 몰드가 부착되고, 상기 마스터 몰드를 상하로 승강시켜 상기 마스터 몰드의 패턴을 상기 전사부에 전사시키는 가압부; 및
상기 가압부 방향으로 광을 조사하는 조사부를 포함하는, 나노 임프린트용 레플리카 몰드 제조장치.
Claims [1] An apparatus for producing a replica mold for a nanoimprint using a replica mold for nanoimprinting according to claim 1,
A filling part filling the cavity of the guide film with resin to form the transfer part;
A pressing part for attaching a master mold to one side and raising and lowering the master mold to transfer the pattern of the master mold to the transfer part; And
And an irradiating portion for irradiating light toward the pressing portion.
청구항 1의 나노 임프린트용 레플리카 몰드를 이용한 나노 임프린트용 레플리카 몰드 제조방법으로서,
상기 가이드 필름의 중공에 레진을 충진하여 상기 전사부를 형성하는 충진단계;
상기 전사부로 마스터 몰드를 이동시키고, 상기 마스터 몰드를 가압하여 패턴을 형성하는 패턴 형성단계;
상기 전사부에 광을 조사하여 상기 전사부를 경화하는 경화단계; 및
상기 가이드 필름을 제거하는 제거단계를 포함하는, 나노 임프린트용 레플리카 몰드의 제조방법.
A method of manufacturing a replica mold for a nanoimprint using a replica mold for a nanoimprint according to claim 1,
Filling the hollow of the guide film with a resin to form the transfer portion;
A pattern forming step of moving the master mold to the transfer portion and pressing the master mold to form a pattern;
A curing step of curing the transfer part by irradiating the transfer part with light; And
And removing the guide film. The method of manufacturing a replica mold for a nanoimprint includes:
KR1020160086614A 2016-07-08 2016-07-08 Replica mold for nano imprint, manufacturing method and equipment thereof KR101816838B1 (en)

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