KR101800273B1 - 웨이퍼 분석 방법 - Google Patents

웨이퍼 분석 방법 Download PDF

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Publication number
KR101800273B1
KR101800273B1 KR1020160004042A KR20160004042A KR101800273B1 KR 101800273 B1 KR101800273 B1 KR 101800273B1 KR 1020160004042 A KR1020160004042 A KR 1020160004042A KR 20160004042 A KR20160004042 A KR 20160004042A KR 101800273 B1 KR101800273 B1 KR 101800273B1
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KR
South Korea
Prior art keywords
wafer
flatness
oxide film
film
evaluating
Prior art date
Application number
KR1020160004042A
Other languages
English (en)
Korean (ko)
Other versions
KR20170084785A (ko
Inventor
이충현
이성욱
함호찬
김자영
Original Assignee
에스케이실트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에스케이실트론 주식회사 filed Critical 에스케이실트론 주식회사
Priority to KR1020160004042A priority Critical patent/KR101800273B1/ko
Priority to PCT/KR2016/013132 priority patent/WO2017122921A1/fr
Publication of KR20170084785A publication Critical patent/KR20170084785A/ko
Application granted granted Critical
Publication of KR101800273B1 publication Critical patent/KR101800273B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020160004042A 2016-01-13 2016-01-13 웨이퍼 분석 방법 KR101800273B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020160004042A KR101800273B1 (ko) 2016-01-13 2016-01-13 웨이퍼 분석 방법
PCT/KR2016/013132 WO2017122921A1 (fr) 2016-01-13 2016-11-15 Procédé d'analyse de plaquette

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020160004042A KR101800273B1 (ko) 2016-01-13 2016-01-13 웨이퍼 분석 방법

Publications (2)

Publication Number Publication Date
KR20170084785A KR20170084785A (ko) 2017-07-21
KR101800273B1 true KR101800273B1 (ko) 2017-11-22

Family

ID=59312019

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160004042A KR101800273B1 (ko) 2016-01-13 2016-01-13 웨이퍼 분석 방법

Country Status (2)

Country Link
KR (1) KR101800273B1 (fr)
WO (1) WO2017122921A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6174740B1 (en) 1995-09-18 2001-01-16 Shin-Etsu Handotai, Co., Ltd. Method for analyzing impurities within silicon wafer
KR100877102B1 (ko) 2007-05-28 2009-01-09 주식회사 하이닉스반도체 열처리 장치 및 이를 이용한 열처리 방법
KR101651965B1 (ko) 2015-01-22 2016-08-30 주식회사 엘지실트론 웨이퍼의 강도를 측정하는 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5506672A (en) * 1993-09-08 1996-04-09 Texas Instruments Incorporated System for measuring slip dislocations and film stress in semiconductor processing utilizing an adjustable height rotating beam splitter
KR20020030458A (ko) * 2000-10-17 2002-04-25 윤종용 웨이퍼의 슬립 라인 검사 방법
JP5718809B2 (ja) * 2008-05-16 2015-05-13 マトソン テクノロジー、インコーポレイテッド 加工品の破壊を防止する方法および装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6174740B1 (en) 1995-09-18 2001-01-16 Shin-Etsu Handotai, Co., Ltd. Method for analyzing impurities within silicon wafer
KR100877102B1 (ko) 2007-05-28 2009-01-09 주식회사 하이닉스반도체 열처리 장치 및 이를 이용한 열처리 방법
KR101651965B1 (ko) 2015-01-22 2016-08-30 주식회사 엘지실트론 웨이퍼의 강도를 측정하는 방법

Also Published As

Publication number Publication date
WO2017122921A1 (fr) 2017-07-20
KR20170084785A (ko) 2017-07-21

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