KR101791685B1 - 수소 이용 화학 반응으로 고용량 주입 스트립(ｈｄｉｓ) 방법 및 장치 - Google Patents

수소 이용 화학 반응으로 고용량 주입 스트립(ｈｄｉｓ) 방법 및 장치 Download PDF

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Publication number
KR101791685B1
KR101791685B1 KR1020080116792A KR20080116792A KR101791685B1 KR 101791685 B1 KR101791685 B1 KR 101791685B1 KR 1020080116792 A KR1020080116792 A KR 1020080116792A KR 20080116792 A KR20080116792 A KR 20080116792A KR 101791685 B1 KR101791685 B1 KR 101791685B1
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KR
South Korea
Prior art keywords
gas
plasma source
workpiece
plasma
fluorine
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KR1020080116792A
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English (en)
Korean (ko)
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KR20100041644A (ko
Inventor
하루히로 해리 고토
데이비드 청
Original Assignee
노벨러스 시스템즈, 인코포레이티드
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Priority claimed from US12/251,305 external-priority patent/US8193096B2/en
Application filed by 노벨러스 시스템즈, 인코포레이티드 filed Critical 노벨러스 시스템즈, 인코포레이티드
Publication of KR20100041644A publication Critical patent/KR20100041644A/ko
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Publication of KR101791685B1 publication Critical patent/KR101791685B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020080116792A 2008-10-14 2008-11-24 수소 이용 화학 반응으로 고용량 주입 스트립(ｈｄｉｓ) 방법 및 장치 KR101791685B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/251,305 2008-10-14
US12/251,305 US8193096B2 (en) 2004-12-13 2008-10-14 High dose implantation strip (HDIS) in H2 base chemistry

Publications (2)

Publication Number Publication Date
KR20100041644A KR20100041644A (ko) 2010-04-22
KR101791685B1 true KR101791685B1 (ko) 2017-11-20

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080116792A KR101791685B1 (ko) 2008-10-14 2008-11-24 수소 이용 화학 반응으로 고용량 주입 스트립(ｈｄｉｓ) 방법 및 장치

Country Status (4)

Country Link
JP (1) JP5586077B2 (ja)
KR (1) KR101791685B1 (ja)
CN (1) CN101727024B (ja)
TW (1) TWI497235B (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8193096B2 (en) 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
US9613825B2 (en) * 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity
KR101357785B1 (ko) * 2012-09-11 2014-02-04 피에스케이 주식회사 기판 처리 방법
JP6202423B2 (ja) * 2013-03-05 2017-09-27 パナソニックＩｐマネジメント株式会社 プラズマクリーニング方法およびプラズマクリーニング装置
TWI653683B (zh) 2017-10-30 2019-03-11 世界先進積體電路股份有限公司 半導體結構和高電子遷移率電晶體的製造方法
WO2019118121A1 (en) * 2017-12-15 2019-06-20 Entegris, Inc. Methods and assemblies using flourine containing and inert gasses for plasma flood gun (pfg) operation
US11121229B2 (en) 2017-12-28 2021-09-14 Vanguard International Semiconductor Corporation Methods of fabricating semiconductor structures and high electron mobility transistors
CN108862200B (zh) * 2018-07-31 2020-04-28 苏州香榭轩表面工程技术咨询有限公司 一种超高纯氢氟酸的制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001308078A (ja) * 2000-02-15 2001-11-02 Canon Inc 有機物除去方法、半導体装置の製造方法及び有機物除去装置並びにシステム
JP2007053344A (ja) * 2005-07-20 2007-03-01 Fujitsu Ltd 電子デバイスの製造方法
JP2007266610A (ja) * 2006-03-28 2007-10-11 Tokyo Electron Ltd エッチング後の処理システムのためのガス分配システム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3317209B2 (ja) * 1997-08-12 2002-08-26 東京エレクトロンエイ・ティー株式会社 プラズマ処理装置及びプラズマ処理方法
US20010027023A1 (en) * 2000-02-15 2001-10-04 Shigenori Ishihara Organic substance removing methods, methods of producing semiconductor device, and organic substance removing apparatuses
US20020185226A1 (en) * 2000-08-10 2002-12-12 Lea Leslie Michael Plasma processing apparatus
US6951823B2 (en) * 2001-05-14 2005-10-04 Axcelis Technologies, Inc. Plasma ashing process
US20030036284A1 (en) * 2001-08-16 2003-02-20 Yu-Ren Chou Method for removing the photoresist layer of ion-implanting process
KR100476136B1 (ko) * 2002-12-02 2005-03-10 주식회사 셈테크놀러지 대기압 플라즈마를 이용한 표면처리장치
US7288484B1 (en) * 2004-07-13 2007-10-30 Novellus Systems, Inc. Photoresist strip method for low-k dielectrics
US20060051965A1 (en) * 2004-09-07 2006-03-09 Lam Research Corporation Methods of etching photoresist on substrates
US7202176B1 (en) * 2004-12-13 2007-04-10 Novellus Systems, Inc. Enhanced stripping of low-k films using downstream gas mixing
US8124516B2 (en) * 2006-08-21 2012-02-28 Lam Research Corporation Trilayer resist organic layer etch

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001308078A (ja) * 2000-02-15 2001-11-02 Canon Inc 有機物除去方法、半導体装置の製造方法及び有機物除去装置並びにシステム
JP2007053344A (ja) * 2005-07-20 2007-03-01 Fujitsu Ltd 電子デバイスの製造方法
JP2007266610A (ja) * 2006-03-28 2007-10-11 Tokyo Electron Ltd エッチング後の処理システムのためのガス分配システム

Also Published As

Publication number Publication date
CN101727024B (zh) 2014-03-19
JP5586077B2 (ja) 2014-09-10
CN101727024A (zh) 2010-06-09
KR20100041644A (ko) 2010-04-22
TW201015248A (en) 2010-04-16
TWI497235B (zh) 2015-08-21
JP2010098279A (ja) 2010-04-30

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