KR101790830B1 - 간섭계, 리소그래피 장치, 및 물품 제조 방법 - Google Patents

간섭계, 리소그래피 장치, 및 물품 제조 방법 Download PDF

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KR101790830B1
KR101790830B1 KR1020140088285A KR20140088285A KR101790830B1 KR 101790830 B1 KR101790830 B1 KR 101790830B1 KR 1020140088285 A KR1020140088285 A KR 1020140088285A KR 20140088285 A KR20140088285 A KR 20140088285A KR 101790830 B1 KR101790830 B1 KR 101790830B1
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South Korea
Prior art keywords
light
interference
incident
substrate
optical system
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Korean (ko)
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KR20150011313A (ko
Inventor
와타루 야마구치
다카히로 마츠모토
히데키 이나
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7034—Leveling
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/0209—Low-coherence interferometers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Instruments For Measurement Of Length By Optical Means (AREA)
  • Spectrometry And Color Measurement (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • General Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
KR1020140088285A 2013-07-22 2014-07-14 간섭계, 리소그래피 장치, 및 물품 제조 방법 Active KR101790830B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-152096 2013-07-22
JP2013152096A JP6271896B2 (ja) 2013-07-22 2013-07-22 干渉計測装置、リソグラフィ装置および物品の製造方法

Publications (2)

Publication Number Publication Date
KR20150011313A KR20150011313A (ko) 2015-01-30
KR101790830B1 true KR101790830B1 (ko) 2017-10-26

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KR1020140088285A Active KR101790830B1 (ko) 2013-07-22 2014-07-14 간섭계, 리소그래피 장치, 및 물품 제조 방법

Country Status (4)

Country Link
US (1) US9625836B2 (https=)
JP (1) JP6271896B2 (https=)
KR (1) KR101790830B1 (https=)
TW (1) TWI579652B (https=)

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* Cited by examiner, † Cited by third party
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JP6449310B2 (ja) 2014-01-18 2019-01-09 デイライト ソリューションズ、インコーポレイテッド 低ノイズ分光画像化システム
US11803044B2 (en) 2014-01-18 2023-10-31 Daylight Solutions, Inc. Low-noise spectroscopic imaging system with steerable substantially coherent illumination
US10437033B2 (en) 2014-01-18 2019-10-08 Daylight Solutions, Inc. Modulating spectroscopic imaging system using substantially coherent illumination
EP2966489A1 (de) * 2014-06-30 2016-01-13 Carl Zeiss SMT GmbH Beleuchtungsoptik sowie abbildende optik für ein metrologiesystem für die untersuchung eines objekts mit euv-beleuchtungs- und abbildungslicht sowie metrologiesystem mit einer derartigen beleuchtungsoptik bzw. einer derartigen abbildungsoptik
KR102688211B1 (ko) * 2015-02-23 2024-07-24 가부시키가이샤 니콘 계측 장치, 리소그래피 시스템 및 노광 장치, 그리고 디바이스 제조 방법
TWI840811B (zh) 2015-02-23 2024-05-01 日商尼康股份有限公司 基板處理系統及基板處理方法、以及元件製造方法
HK1246871A1 (en) 2015-02-23 2018-09-14 Nikon Corporation Measurement device, lithography system and exposure device, and management method, superposition measurement method and device manufacturing method
EP3309616A1 (en) 2016-10-14 2018-04-18 ASML Netherlands B.V. Method of inspecting a substrate, metrology apparatus, and lithographic system
JP6818501B2 (ja) * 2016-10-19 2021-01-20 キヤノン株式会社 リソグラフィ装置、および物品製造方法
JP2020060690A (ja) * 2018-10-10 2020-04-16 ウシオ電機株式会社 光照射方法、機能素子の製造方法および光照射装置
US11162897B2 (en) 2019-05-15 2021-11-02 Onto Innovation Inc. Optical metrology device using numerical aperture reduction
CN115956367B (zh) * 2020-08-18 2025-07-01 齐戈股份有限公司 可变变焦成像装置
JP7743209B2 (ja) 2021-06-08 2025-09-24 キヤノン株式会社 成形装置、成形方法及び物品の製造方法
KR102492803B1 (ko) * 2022-04-19 2023-01-31 (주)오로스테크놀로지 조리개를 이용하여 입사 각도 또는 개구수를 조절하는 편광 분석 장치 및 방법
CN118565358B (zh) 2024-07-31 2024-11-22 合肥合视科达智能科技有限公司 一种厚度及双侧面形同步检测系统及方法

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US20070086013A1 (en) * 2005-10-11 2007-04-19 Zygo Corporation Interferometry method and system including spectral decomposition
US20090225327A1 (en) * 2008-03-05 2009-09-10 Canon Kabushiki Kaisha Position measurement apparatus, position measurement method, and exposure apparatus
US20120307258A1 (en) * 2010-01-22 2012-12-06 Universitaet Stuttgart Method and arrangement for robust interferometry

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US5398113A (en) 1993-02-08 1995-03-14 Zygo Corporation Method and apparatus for surface topography measurement by spatial-frequency analysis of interferograms
JP3685667B2 (ja) * 1999-10-27 2005-08-24 株式会社日立製作所 立体形状検出方法及び装置、並びに検査方法及び装置
US7884947B2 (en) 2005-01-20 2011-02-08 Zygo Corporation Interferometry for determining characteristics of an object surface, with spatially coherent illumination
JP5084558B2 (ja) 2008-02-28 2012-11-28 キヤノン株式会社 表面形状計測装置、露光装置及びデバイス製造方法
JP5787483B2 (ja) * 2010-01-16 2015-09-30 キヤノン株式会社 計測装置及び露光装置
JP2013024747A (ja) * 2011-07-21 2013-02-04 Canon Inc 計測装置、露光装置およびデバイス製造方法

Patent Citations (3)

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US20070086013A1 (en) * 2005-10-11 2007-04-19 Zygo Corporation Interferometry method and system including spectral decomposition
US20090225327A1 (en) * 2008-03-05 2009-09-10 Canon Kabushiki Kaisha Position measurement apparatus, position measurement method, and exposure apparatus
US20120307258A1 (en) * 2010-01-22 2012-12-06 Universitaet Stuttgart Method and arrangement for robust interferometry

Also Published As

Publication number Publication date
TWI579652B (zh) 2017-04-21
JP6271896B2 (ja) 2018-01-31
US9625836B2 (en) 2017-04-18
KR20150011313A (ko) 2015-01-30
US20150022796A1 (en) 2015-01-22
JP2015021904A (ja) 2015-02-02
TW201504771A (zh) 2015-02-01

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