KR101783290B1 - 반도체 장치 제조용 가접착제, 그것을 사용한 접착성 지지체, 및 반도체 장치의 제조 방법 - Google Patents

반도체 장치 제조용 가접착제, 그것을 사용한 접착성 지지체, 및 반도체 장치의 제조 방법 Download PDF

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KR101783290B1
KR101783290B1 KR1020157007311A KR20157007311A KR101783290B1 KR 101783290 B1 KR101783290 B1 KR 101783290B1 KR 1020157007311 A KR1020157007311 A KR 1020157007311A KR 20157007311 A KR20157007311 A KR 20157007311A KR 101783290 B1 KR101783290 B1 KR 101783290B1
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group
adhesive
adhesive layer
compound
substrate
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KR20150048178A (ko
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유 이와이
카즈히로 후지마키
이치로 코야마
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후지필름 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C09J4/06—Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups C09J159/00 - C09J187/00
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    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C—CHEMISTRY; METALLURGY
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    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/02—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving pretreatment of the surfaces to be joined
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/385—Acrylic polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
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    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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    • C09J2400/20—Presence of organic materials
    • C09J2400/22—Presence of unspecified polymer
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    • H01—ELECTRIC ELEMENTS
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    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
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    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

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  • Engineering & Computer Science (AREA)
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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020157007311A 2012-09-28 2013-09-10 반도체 장치 제조용 가접착제, 그것을 사용한 접착성 지지체, 및 반도체 장치의 제조 방법 Expired - Fee Related KR101783290B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2012-218584 2012-09-28
JP2012218584A JP2014070191A (ja) 2012-09-28 2012-09-28 半導体装置製造用仮接着剤、並びに、それを用いた接着性支持体、及び、半導体装置の製造方法。
PCT/JP2013/074346 WO2014050538A1 (ja) 2012-09-28 2013-09-10 半導体装置製造用仮接着剤、並びに、それを用いた接着性支持体、及び、半導体装置の製造方法

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KR20150048178A KR20150048178A (ko) 2015-05-06
KR101783290B1 true KR101783290B1 (ko) 2017-09-29

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US (1) US9505953B2 (enExample)
JP (1) JP2014070191A (enExample)
KR (1) KR101783290B1 (enExample)
TW (1) TW201418402A (enExample)
WO (1) WO2014050538A1 (enExample)

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JP5982248B2 (ja) * 2012-09-28 2016-08-31 富士フイルム株式会社 半導体装置製造用仮接合層、積層体、及び、半導体装置の製造方法。
US9850406B2 (en) 2014-11-07 2017-12-26 International Business Machines Corporation Adhesive resins for wafer bonding
CN107406748B (zh) * 2015-03-23 2019-02-01 富士胶片株式会社 套组及层叠体
JP6821580B2 (ja) * 2015-10-08 2021-01-27 リンテック株式会社 熱硬化性樹脂フィルム及び第１保護膜形成用シート
JP6716403B2 (ja) * 2016-09-09 2020-07-01 株式会社ディスコ 積層ウェーハの加工方法
JP6492217B1 (ja) * 2018-07-12 2019-03-27 ハイソル株式会社 半導体チップの研磨方法
EP3924999A4 (en) * 2019-02-15 2022-11-02 Kulicke & Soffa Netherlands B.V. DYNAMIC SEPARATOR TAPES FOR MOUNTING DISCRETE COMPONENTS
KR102816214B1 (ko) 2020-02-17 2025-06-09 삼성디스플레이 주식회사 점착층 제조 방법 및 그 제조 방법으로 제조된 점착층을 포함하는 표시 장치
TWI824484B (zh) * 2022-04-15 2023-12-01 國精化學股份有限公司 液態黏結劑及螢石塊

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011219686A (ja) * 2010-04-14 2011-11-04 Denki Kagaku Kogyo Kk 接着剤組成物及びそれを用いた部材の仮固定方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3483161B2 (ja) 1994-08-11 2004-01-06 リンテック株式会社 粘接着テープおよびその使用方法
JP4601757B2 (ja) * 2000-02-17 2010-12-22 株式会社 アーデル 仮固定用接着剤組成物及びその使用方法
CN1585809A (zh) * 2001-11-15 2005-02-23 积水化学工业株式会社 粘合性物质、粘合性物质的剥离方法以及胶带
JP3566710B2 (ja) * 2001-11-15 2004-09-15 積水化学工業株式会社 接着性物質、接着性物質の剥離方法及び粘着テープ
JP4518535B2 (ja) * 2003-07-01 2010-08-04 日東電工株式会社 ダイシング用粘着シート用粘着剤、ダイシング用粘着シート、半導体素子の製造方法、半導体素子
JP2006111651A (ja) * 2004-10-12 2006-04-27 Nippon Synthetic Chem Ind Co Ltd:The 粘着シート
EP1900761B1 (en) * 2005-07-04 2012-06-13 Denki Kagaku Kogyo Kabushiki Kaisha Curable composition and method for temporal fixation of structural member using the same
JP2007045939A (ja) 2005-08-10 2007-02-22 Jsr Corp 粘着フィルムの粘着力低減方法
JP4767007B2 (ja) * 2005-12-14 2011-09-07 電気化学工業株式会社 硬化性組成物及びそれを用いる部材の仮固定方法
JP5335443B2 (ja) 2006-03-01 2013-11-06 シン マテリアルズ アクチェンゲゼルシャフト ウエハ支持構造体及び該ウエハ支持構造体の製造に用いられる層システム
US20080200011A1 (en) 2006-10-06 2008-08-21 Pillalamarri Sunil K High-temperature, spin-on, bonding compositions for temporary wafer bonding using sliding approach
JP5237647B2 (ja) 2008-01-25 2013-07-17 リンテック株式会社 粘接着剤組成物、粘接着シートおよび半導体装置の製造方法
JP5464810B2 (ja) * 2008-03-13 2014-04-09 日本合成化学工業株式会社 剥離性粘着剤、剥離性粘着シート、剥離性粘着シートの剥離方法
JP4810565B2 (ja) * 2008-11-26 2011-11-09 日東電工株式会社 ダイシング・ダイボンドフィルム及び半導体装置の製造方法
JP5599575B2 (ja) * 2009-04-16 2014-10-01 電気化学工業株式会社 仮固定用接着剤組成物
TWI479259B (zh) 2009-06-15 2015-04-01 Sumitomo Bakelite Co A temporary fixing agent for a semiconductor wafer, and a method of manufacturing the semiconductor device using the same
JP5525779B2 (ja) * 2009-08-04 2014-06-18 東京応化工業株式会社 接着剤組成物、及び接着フィルム
JP2011052142A (ja) 2009-09-03 2011-03-17 Jsr Corp 接着剤組成物、それを用いた基材の加工または移動方法および半導体素子
JP5010668B2 (ja) 2009-12-03 2012-08-29 信越化学工業株式会社 積層型半導体集積装置の製造方法
JP5691538B2 (ja) 2010-04-02 2015-04-01 Jsr株式会社 仮固定用組成物、仮固定材、基材の処理方法、および半導体素子

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011219686A (ja) * 2010-04-14 2011-11-04 Denki Kagaku Kogyo Kk 接着剤組成物及びそれを用いた部材の仮固定方法

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