KR101748702B1 - Composite of partition, electrophoretic display deivce and method of fabrication thereof - Google Patents

Abstract

The present invention relates to a method of manufacturing an electrophoretic display device in which a process is simplified and a barrier rib can be formed quickly, and a method of manufacturing an electrophoretic display device includes providing a first substrate and a second substrate including an image display unit including a plurality of pixels and an image non- step; Forming a thin film transistor on the first substrate; Forming a protective layer on the first substrate on which the thin film transistor is formed; Applying a liquid composition on the protective layer and imprinting the liquid composition to form a plurality of barrier ribs on the image display area and forming pixel electrodes on the image display area; Dropping an electrophoretic material in a plurality of regions formed between the plurality of partitions; Forming a common electrode on the second substrate; And coalescing the first substrate and the second substrate, wherein the liquid composition comprises 5-50w% of glycidyl methacrylate, 10-30w% of hydroxyethyl methacrylate, 1-20 wt% of an adhesion promoter such as 2- (carbomethoxy) ethyltrimethoxy silane, 20-40w% of hezanediol diacrylate, Irgaure 369 , And 1-3 wt% of nano Ag (Nano Ag).

Description

TECHNICAL FIELD [0001] The present invention relates to a barrier rib composition, an electrophoretic display device having the barrier rib composition, and an electrophoretic display device having the barrier rib composition,

The present invention relates to a barrier rib composition, an electrophoretic display element and a method of manufacturing the same.

In general, an electrophoretic display device is an image display device using a phenomenon in which a pair of electrodes to which a voltage is applied is immersed in a colloid solution to move the colloid particles to either one of polarities. The electrophoretic display device has a wide viewing angle, a high reflectance, Power and the like, all kinds of electronic devices are attracting attention as electronic devices such as electric paper.

The electrophoretic display device has a structure in which an electrophoretic layer is interposed between two substrates, one of the two substrates is made of a transparent substrate and the other is made up of an array substrate on which a driving device is formed, An image can be displayed in the reflective mode.

1 is a view showing a structure of a conventional electrophoretic display element 1. Fig.

1, the electrophoretic display element 1 includes a first substrate 20 and a second substrate 40 including a plurality of pixel regions, a first substrate 20 and a second substrate 40 formed on the image display portion of the first substrate 20, A pixel electrode 18, a common electrode 42 formed on the second substrate 40, and barrier ribs formed on the image non-display portion between the pixel and the pixel region of the second substrate 40, (80), and an electrophoretic layer (60) formed between the first substrate (20) and the second substrate (40).

Though not shown in the drawing, a thin film transistor is formed in each pixel region, and an electric field is formed between the pixel electrode 18 and the common electrode 42 as a voltage is applied to the pixel electrode 18, The second substrate 40 including the first substrate 60 is bonded to the first substrate 20 by an adhesive layer. The electrophoretic layer 60 is made of an electrophoretic material in which white particles 64 and black particles 65 having positive and negative charge characteristics, respectively, are dispersed in the dispersion medium 62.

In the electrophoretic display device having such a structure, since the white particles 64 have positive charge characteristics, when a positive voltage is applied to the pixel electrode 18 from the outside, the common electrode 42 has a relatively negative potential So that the white particles 64 having (+) charges move toward the common electrode 42. Therefore, when light is input from the outside, that is, from the upper portion of the second substrate 40, the inputted light is mostly reflected by the white particles 64, so that white is realized in the electrophoretic display element.

On the contrary, when a negative voltage is applied to the pixel electrode 18, the common electrode 42 has a (+) potential, and the white particles 64 having (+) charges are transferred to the first substrate 20 When light is input from the outside due to the movement, the input light is hardly reflected, thereby realizing black.

A method of manufacturing the conventional electrophoretic display device 1 having the above-described structure will be schematically described as follows.

2 is a flow chart schematically showing a method of manufacturing the electrophoretic display element 1 of the prior art.

2, a plurality of gate lines and data lines for defining pixel regions are formed on the first substrate 20, and the gate lines and the data (data lines) A thin film transistor which is a driving element connected to a line is formed (S101). Subsequently, a pixel electrode 18 is formed on the first substrate 20 on which the thin film transistor is formed (S102).

On the other hand, a common electrode 42 is formed on the second substrate 40 (S103). Subsequently, barrier ribs are formed on the second substrate 40 to partition each pixel region, and the electrophoretic layer 60 is formed by filling electrophoretic material in the pixel region defined by the barrier ribs (S105). Thereafter, the common electrode 42 is formed on the second substrate 40 on which the electrophoretic layer 60 is formed, and a protective film is attached thereon (S105, S106). At this time, although not shown in the figure, an adhesive layer is formed on the common electrode 42, and the protective film is attached to the adhesive layer. In order to prevent the adhesive force of the adhesive layer from being lowered or the foreign substance to adhere to the adhesive layer when the second substrate 40 is transferred to the laminating process for attaching the second substrate 40 to the first substrate 20 Respectively.

Typically, an electrophoretic display device manufacturer receives a second substrate 40 on which an electrophoretic layer 60 is formed, and attaches the first substrate 20 to the first substrate 20. That is, after the second substrate 40 having the electrophoretic layer 60 formed thereon is transferred from the outside to the electrophoretic display element formation line, the first substrate 20 and the second substrate 40 are attached to each other, .

Accordingly, since the second substrate 40 on which the electrophoretic layer 60 is formed must be transported a long distance by a transporting means such as a vehicle, the adhesive force of the adhesive layer is lowered during the transportation and the first substrate 20 and the second substrate 40 are adhered to each other, a protective film is provided to prevent the adhesive strength of the adhesive layer from being weakened to prevent defects.

The second substrate 40 transferred to the manufacturing line of the electrophoretic display device manufacturer is peeled off the attached protective film, then aligned with the first substrate 20 and then adhered to complete the electrophoretic display device (S109).

However, in the conventional electrophoretic display device 1 manufactured by the above-described method, the following problems arise.

In the conventional electrophoretic display device 1, the first substrate 20 and the second substrate 40 are manufactured separately, and then the first substrate 20 and the second substrate 40 are bonded together by an adhesive layer .

However, since the unit pixel of the electrophoretic display element is formed to have a small size of 150 mu m or less in width and width, it is very difficult to align the electrophoresis layer with the pixels so as to exactly match the size. If the first substrate on which the electrophoretic layer and the thin film transistor are formed is not aligned correctly, the electric field can not be accurately transferred to the electrophoretic particles, which causes a driving error.

In addition, since the first substrate 20 and the second substrate 40 are manufactured by different processes, they must be transferred by the transfer means and adhered to each other in the adhesion process. Thus, the manufacturing process can not be performed in-line, The manufacturing process is delayed and the manufacturing cost is increased.

On the other hand, a common electrode 42 is formed on the second substrate 40, an electrophoretic layer 60 is coated, an adhesive layer is applied, and the second substrate 40 is transferred to the first substrate 20 It is necessary to transfer the adhesive layer in a state that a protective film is adhered to the adhesive layer to prevent adhesion of the adhesive layer to the adhesive layer or adherence of the foreign substance to the adhesive layer. The protective film must be peeled off from the second substrate 40 in order to adhere to the substrate 20. The static electricity is generated in the peeling process of the protective film and the generated static electricity causes misalignment in the initial arrangement of the electrophoretic particles And the moire of the comb-like pattern was generated in the operation of the electrophoretic display device.

As described above, in the conventional electrophoretic display device, since the first substrate 20 and the second substrate 40 are manufactured by different processes, the first substrate 20 and the second substrate 40 ) Or the process becomes complicated, static electricity is generated when the adhesive layer is peeled off, and the image quality is poor.

An object of the present invention is to provide an electrophoretic display device and a method of manufacturing the electrophoretic display device which can reduce the manufacturing cost and simplify the manufacturing process by directly forming the electrophoretic layer on the substrate on which the thin film transistor is formed The purpose.

It is another object of the present invention to provide an electrophoretic display device capable of rapidly forming a barrier rib and a method of manufacturing the same.

According to an aspect of the present invention, there is provided a method of manufacturing an electrophoretic display device, including: providing a first substrate and a second substrate including an image display unit including a plurality of pixels and an image non-display unit; Forming a thin film transistor on the first substrate; Forming a protective layer on the first substrate on which the thin film transistor is formed; Applying a liquid composition on the protective layer and imprinting the liquid composition to form a plurality of barrier ribs on the image display area and forming pixel electrodes on the image display area; Dropping an electrophoretic material in a plurality of regions formed between the first bank and the first bank; Forming a common electrode on the second substrate; And coalescing the first substrate and the second substrate, wherein the liquid composition comprises 5-50w% of glycidyl methacrylate, 10-30w% of hydroxyethyl methacrylate, 20-40w% of hexanediol diacrylate, 1-20w% of an adhesion promoter such as 2- (carbomethoxy) ethyltrimethoxy silane), 20g of photoinitiator 1 -3 wt% and nano Ag (Nano Ag) 1 wt% to 3 wt%.

The forming of the barrier may include applying a liquid composition to a first substrate; Contacting the mold having the pattern formed thereon with the applied liquid composition, and applying pressure to the liquid composition to introduce the liquid composition into the pattern; Curing the liquid composition; And separating the mold, wherein the liquid composition is introduced into the pattern by capillary phenomenon.

Also, an electrophoretic display device according to the present invention includes: a first substrate and a second substrate including an image display unit including a plurality of pixels and an image non-display unit; a thin film transistor formed on the first substrate; A protective layer on the substrate on which the thin film transistor is formed; Barrier ribs formed on the image non-display portion on the protective layer; A pixel electrode formed on the image display section on the protective layer; A common electrode formed on the second substrate; And an electrophoretic layer formed between the first barrier rib and the barrier rib, wherein the barrier rib comprises 5-50w% of glycidyl methacrylate, 10-30w% of hydroxyethyl methacrylate, 1-20w% of an adhesion promoter such as 20-40w% of hezanediol diacrylate, 2- (carbomethoxy) ethyltrimethoxy silane), photoinitiator 1-3w % And nano Ag (Nano Ag) in an amount of 1 to 3 wt%.

In the present invention, since the electrophoretic layer is formed directly on the array substrate on which the thin film transistor is formed, a protective film for protecting the adhesive layer or the adhesive layer used for attaching the electrophoretic layer to the array substrate is not needed, have. In addition, since the electrophoretic layer can be formed inline on the production line of the array substrate forming the thin film transistor, the manufacturing process can be simplified.

In addition, since the protective film for protecting the electrophoretic layer is not used in the present invention, it is possible to improve the image quality deterioration due to the static electricity generated when the protective film is removed, It is possible to fundamentally solve the problem of lowering the image quality due to misalignment as compared with the prior art in which the electrophoretic layer is separately formed and then adhered through an alignment process.

Further, in the present invention, since the partition walls are formed by the liquid composition and then formed by the imprint method, the partition walls can be formed quickly. At this time, because the barrier rib includes nano-Ag, it is possible to reduce the sheet resistance of the barrier rib, and as a result, the driving voltage of the electrophoretic display device can be lowered.

1 is a view showing a conventional electrophoretic display device.
2 is a flow chart briefly showing a method of manufacturing a conventional electrophoretic display device.
3 is a flow chart briefly illustrating a method of manufacturing an electrophoretic display device according to the present invention.
4A to 4G are views showing a method for manufacturing an electrophoretic display element according to the present invention.
5A to 5C are views showing a method of manufacturing a partition wall in the method for manufacturing an electrophoretic display element according to the present invention.
6A and 6B are views showing a method of manufacturing an electrophoretic layer in the method of manufacturing an electrophoretic display device according to the present invention, respectively.

Hereinafter, an electrophoretic display device and a method thereof according to the present invention will be described in detail with reference to the accompanying drawings.

3 is a flow chart schematically showing a manufacturing process of an electrophoretic display device according to the present invention.

As shown in FIG. 3, first, a plurality of gate lines and data lines defining a pixel region are formed on a first substrate, and thin film transistors, which are driving elements connected to the gate lines and the data lines, are formed in each of the pixel regions (S201). Subsequently, after the barrier ribs are formed on the image non-display portions on the first substrate on which the thin film transistors are formed, pixel electrodes are formed on the image display portions (S202, S203).

Next, an electrophoretic layer is formed by applying an electrophoretic substance to a pixel region partitioned by the barrier ribs of the first substrate, that is, an image display unit (S204).

Meanwhile, a common electrode is formed on the second substrate (S205), and the second substrate on which the common electrode is formed is aligned with the first substrate and then attached thereto to complete the electrophoretic display device (S206, S207).

The common electrode is formed by laminating a transparent conductive material to a second substrate by a method such as vapor deposition, and is formed by the same manufacturing line as the thin film transistor or the pixel electrode formed on the first substrate. In other words, in the present invention, since the process of the second substrate can be performed in the same manufacturing line as the process of the first substrate, the conventional electrophoretic display device is manufactured by transferring the second substrate from another factory, 2, the electrophoretic display device of the present invention can manufacture the first substrate and the second substrate in an inline manner, and can bond the first and second substrates together.

As described above, in the present invention, since the first substrate and the second substrate are manufactured in an in-line process, the adhesive layer for attaching the substrate on which the second substrate is transferred or the electrophoretic layer formed thereon to the thin film transistor substrate, A protective film for protecting the adhesive layer of the substrate on which the electrophoretic layer is formed is not required, and the manufacturing process can be simplified.

Hereinafter, an actual manufacturing method of the electrophoretic display device according to the present invention will be described in detail with reference to FIGS. 4A to 4H. At this time, although the electrophoretic display element is substantially composed of a plurality of unit pixels, only one pixel is shown in the drawing for convenience of explanation.

First, as shown in FIG. 4A, a first substrate 120 made of a transparent material such as glass or plastic, which is composed of an image display unit and an image display unit, is formed on the first substrate 120 such as Cr, Mo, Ta, Cu, Ti, Al, The gate electrode 111 is formed by a photolithography process to form the gate electrode 111 and then the gate electrode 111 is formed on the substrate 120 on which the gate electrode 111 is formed. An inorganic insulating material such as SiO ₂ or SiNx is deposited by CVD (Chemical Vapor Deposition) over the entire surface to form a gate insulating layer 122.

Next, as shown in FIG. 4B, a semiconductor material such as amorphous silicon (a-Si) is deposited over the entire first substrate 120 by a CVD method, and then the semiconductor layer 113 is formed by etching. Although not shown in the drawing, an amorphous silicon doped with impurities or doped with impurities is doped in a part of the semiconductor layer 113, and the ohmic contact (not shown) in which a source electrode and a drain electrode, which will be formed later, Thereby forming an ohmic contact layer.

4C, an opaque metal having good conductivity such as Cr, Mo, Ta, Cu, Ti, Al, or Al alloy is stacked on the first substrate 120 by a sputtering method, The source electrode 115 and the drain electrode 116 are formed on the layer 113 and strictly speaking the ohmic contact layer and then the entire surface of the first substrate 120 on which the source electrode 115 and the drain electrode 116 are formed An organic insulating material such as a BCB (Benzo Cyclo Butene) or a photo acryl is laminated to form a protective layer 124. At this time, a part of the passivation layer 124 is etched to form a contact hole 117 through which the drain electrode 116 is exposed to the outside.

Also, although not shown in the figure, the protective layer 124 may be formed of a plurality of layers. For example, the protective layer 124 may be formed as a double layer of the inorganic insulating layer made of an inorganic insulating material such as a layer of organic insulation made of an organic insulating material such as BCB or the picture acrylic and SiO _2, or SiNx, inorganic An insulating layer, an organic insulating layer, and an inorganic insulating layer. As the organic insulating layer is formed, the surface of the protective layer 124 is formed flat and the interface characteristic with the protective layer 124 is improved by applying the inorganic insulating layer.

Next, as shown in FIG. 4D, the barrier ribs 180 are formed in the image non-display region of the first substrate 120.

The barrier ribs 180 may be formed by laminating an insulating layer made of resin or the like and then etching them by a photolithography method using a photoresist, or by laminating a photosensitive resin and then etching them by a photolithography method. However, since the barrier ribs 180 are formed to a thickness of about 10-100 mu m, there is a problem that the light irradiation time and the development time become longer when formed by the photolithography method, thereby delaying the process.

In order to solve this problem, in the present invention, the barrier ribs 180 are formed by an imprinting method. A method of forming the barrier ribs 180 by imprinting is disclosed in FIGS. 5A to 5C .

5A, a first substrate 120 on which a thin film transistor or the like is formed is loaded on a stage 190, and then an ultraviolet curable liquid composition 180a is coated on the first substrate 120 . Wherein the liquid composition comprises 5-50 wt% of glycidyl methacrylate, 10-30 wt% of hydroxyethyl methacrylate, 20-40 wt% of hezanediol diacrylate, 2- (Adhesion promoter) such as 2- (carbomethoxy) ethyltrimethoxy silane, and 1-3 wt% of a photoinitiator such as Irgaure 369.

In the present invention, the liquid composition may contain 5-50w% of glycidyl methacrylate, 10-30w% of hydroxyethyl methacrylate, 20g of hezanediol diacrylate 20 1-20w% of an adhesion promoter such as 2- (carbomethoxy) ethyltrimethoxy silane, 1-3w% of a photoinitiator such as Irgaure 369, (Nano Ag) of 1 to 3 wt% may be used.

Thus, when the liquid composition contains nano-Ag, the sheet resistance can be reduced when the barrier rib is formed by the liquid composition, so that the electrophoretic display device can be operated by a low driving voltage.

After the liquid composition 180a is applied on the first substrate 120 as described above and the mold 192 having the pattern 194 formed thereon is aligned with the first substrate 120, . At this time, the height of the pattern 194 is about 10-100 μm and the width is about 5-20 μm.

5B, if the mold 192 is pressed while being in contact with the first substrate 120 in contact with the first substrate 120, the liquid composition 180a is transferred to the mold 192 by the capillary phenomenon, The pattern 194 of FIG. Since the height of the pattern 194 of the mold 192 is about 10-100 μm and its height is very high, the liquid composition 180 a flows between the patterns 194 of the mold 192 due to the capillary phenomenon, The liquid composition 180a is rapidly filled between the patterns 194.

When the liquid composition 180a is irradiated with ultraviolet rays to cure the liquid composition 180a and the mold 192 is separated from the first substrate 120 as shown in FIG. 5C, the first substrate 120 120, a plurality of partitions 180 having a height of about 10-100 mu m and a width of about 5-20 mu m are formed.

Although not shown in the drawing, the barrier ribs 180 are formed in a matrix shape on the first substrate 120 along the image non-display region. Although the sectional shape of the barrier rib 180 is formed in a diamond shape in the drawing, the sectional shape of the barrier rib 180 may be formed in various shapes such as a rectangular shape, a square shape, and a hexagonal shape.

4E, a transparent conductive material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), Mo, AlNd, or the like is deposited over the entire surface of the first substrate 120 on which the first bank 180 is formed. The same metal is stacked and etched to form a pixel electrode 118 which is electrically connected to the drain electrode 116 of the thin film transistor through the contact hole 117 in the image display portion of the first substrate 120. [

At this time, a metal layer is formed on the passivation layer 124 and etched to form the pixel electrode 118 in the image display region of the first substrate 120. Thereafter, (180) may be formed.

Then, as shown in FIG. 4F, the electrophoretic layer 160 is formed by filling electrophoretic material in the barrier ribs 180. The electrophoretic material is composed of a dispersion medium 162 such as a solvent and particles 165 having positive and negative charge characteristics dispersed in the dispersion medium 162. The particles 165 may be color particles such as cyan, magenta or yellow or color particles such as red (R), green (G) and blue (B) It is possible.

At this time, in the case of color particles, the colorant may have a negative charge or a positive charge. In addition, only one kind of color particles may be dispersed in the electrophoretic layer 160, or two kinds of particles may be scattered. When two kinds of particles are dispersed, the particles may be dispersed in white particles or color particles (i.e., R, G, B color particles), and black particles and color particles may be scattered. In addition, two kinds of particles having different colors may be scattered.

The dispersion medium 162 may be a liquid such as a solvent or a liquid polymer in which color particles are distributed, or air itself. As described above, when the dispersion medium is the air itself, it means that the particles move in the air as the voltage is applied without the dispersion medium.

When a liquid polymer is used as the dispersion medium 162, a transparent dispersion medium, a black dispersion medium or a color dispersion medium may be used as the dispersion medium 162. In the case of using the black dispersion medium, since the light incident from the outside is absorbed, a clear black is displayed in the black implementation, and the contrast can be improved. Further, in the case of using a color dispersion medium, the particles 165 may use white particles or black particles, or may use particles having a color different from that of the color dispersion medium.

6A and 6B illustrate a method of forming the electrophoretic layer 160 by filling an electrophoretic material into the barrier ribs 180 formed on the substrate 120. FIG.

The method shown in FIG. 6A relates to an ink jet method or a nozzle method. After the electrophoretic material 160a is filled in the syringe (or nozzle) 185 as shown in FIG. 6A, And the syringe 185 is placed on the upper part. Thereafter, the syringe 185 is moved on the substrate 120 while pressure is applied to the syringe 185 by an external air supply device (not shown) The electrophoretic material 160a is dropped to form an electrophoretic layer 160 on the substrate 120. [

6B illustrates a squeeze method. As shown in FIG. 6B, the electrophoretic material 160a is coated on a substrate 120 having a plurality of barrier ribs 180, The electrophoretic material 160a is filled into the barrier ribs 180 in the unit pixel by the pressure of the squeeze bar 187 to form the electrophoretic layer 160. [

Of course, the present invention is not limited to the above-described method. The above-described method shows an example of a process of forming the electrophoretic layer 160 that can be used in the present invention, and the present invention is not limited to this specific process. For example, various electrophoresis layer forming processes such as cast printing, bar coating printing, screen printing, and mold printing may be applied to the present invention.

4G, a transparent conductive material such as ITO or IZO is laminated on a second substrate 140 made of a transparent material to form a common electrode 142, a sealing material 142 is formed on the second substrate 140, To form a sealing layer 168. The first substrate 120 and the second substrate 140 are aligned and bonded together to complete the electrophoretic display device. At this time, the sealing layer 168 may be formed on the entire surface of the first substrate 120 or on the barrier ribs 180.

The structure of the electrophoretic display device according to the present invention manufactured by the above method will be described in detail with reference to FIG.

4G, the electrophoretic display device according to the present invention includes a gate electrode 111, a semiconductor layer 113, a source electrode 115, and a drain electrode 116 And a protective layer 124 is formed on the thin film transistor. A barrier rib 180 is formed on the image non-display portion on the protective layer 124 and an electrophoretic layer 160 is formed on the image display portion of the first substrate 120, So that the electrophoretic layer 160 directly contacts the pixel electrode 118.

The barrier ribs 180 are formed by curing the liquid composition and include 5-50 wt% of glycidyl methacrylate, 10-30 wt% of hydroxyethyl methacrylate, 1-20 wt% of an adhesion promoter such as 2- (carbomethoxy) ethyltrimethoxy silane, 20-40w% of hezanediol diacrylate, a photoinitiator such as Irgaure 369 1-3 wt% and nano Ag (Nano Ag) 1-3 wt%.

 Therefore, in the electrophoretic display device of the present invention, unlike the electrophoretic display device of the related art, the electrophoretic display device according to the present invention is provided with a separate electrophoretic layer 160 for attaching the electrophoretic layer 160 between the electrophoretic layer 160 and the pixel electrode 118 and the protective layer 124 An adhesive layer is not necessary. In addition, since the barrier rib 180 includes nano-Ag, the sheet resistance of the barrier rib 180 is reduced, and the electrophoretic display device can be operated by a low driving voltage.

As described above, in the present invention, since the electrophoretic layer is formed by directly applying the electrophoretic layer on the substrate on which the thin film transistor is formed, compared with the conventional electrophoretic layer formed on a separate substrate, the adhesive layer or the adhesive layer The manufacturing cost can be reduced and the electrophoresis layer can be formed on the conventional thin film transistor manufacturing line or the common electrode forming line, so that the manufacturing process can be simplified.

In addition, since the protective film for protecting the electrophoretic layer is not used originally, the present invention can solve the problem of image quality deterioration due to static electricity generated when the protective film is removed.

As described above, in the present invention, the liquid composition is formed by imprinting at the time of forming the barrier ribs to form the high barrier ribs by the capillary phenomenon, so that the rapid barrier ribs can be formed.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments.

120, 140: substrate 111: gate electrode
113: semiconductor layer 115: source electrode
116: drain electrode 118: pixel electrode
124: protective layer 142: common electrode
160: electrophoresis layer 168: sealing layer
180: partition wall 192: mold
194: Pattern

Claims (19)

Providing a first substrate and a second substrate including an image display portion including a plurality of pixels and an image non-display portion;
Forming a thin film transistor on the first substrate;
Forming a protective layer on the first substrate on which the thin film transistor is formed;
Applying a liquid composition on the protective layer and imprinting the liquid composition to form a plurality of barrier ribs on the image display area and forming pixel electrodes on the image display area;
Dropping an electrophoretic material in a plurality of regions formed in a region between the plurality of partition walls;
Forming a common electrode on the second substrate; And
And bonding the first substrate and the second substrate to each other,
Wherein the liquid composition comprises 5-50 wt% of glycidyl methacrylate, 10-30 wt% of hydroxyethyl methacrylate, 20-40 wt% of hezanediol diacrylate, 2- (Adhesion promoter) such as 2- (carbomethoxy) ethyltrimethoxy silane, 1-3 wt% of photoinitiator and 1-3 wt% of nano Ag Wherein the electrophoretic display element is formed on the substrate. The method of claim 1, wherein forming the barrier ribs and the pixel electrodes comprises:
Forming a barrier rib on an image non-display portion of the first substrate; And
And forming a pixel electrode on an image display portion of the first substrate. The method of claim 1, wherein forming the barrier ribs and the pixel electrodes comprises:
Forming a pixel electrode on an image display portion of the first substrate; And
And forming a barrier rib on the image non-display portion of the first substrate. The method as claimed in claim 2 or 3,
Applying a liquid composition to a first substrate;
Contacting the mold having the pattern formed thereon with the applied liquid composition, and applying pressure to the liquid composition to introduce the liquid composition into the pattern;
Curing the liquid composition; And
And separating the mold from the mold. 5. The method of claim 4, wherein the liquid composition is introduced into the pattern by capillary action. The method according to claim 1, wherein the electrophoretic material comprises color particles having charge characteristics. [7] The method of claim 6, wherein the electrophoretic material further comprises a dispersion medium. 8. The method according to claim 7, wherein the dispersion medium comprises a transparent dispersion medium, a black dispersion medium or a color dispersion medium. The method of claim 1, further comprising forming a sealing layer on the first or second substrate to seal the electrophoretic material. 10. The method of claim 9, wherein the sealing layer is formed over the entire surface of the first substrate or the second substrate. 10. The method of claim 9, wherein the sealing layer is formed on the barrier ribs. The method of claim 1, wherein forming the thin film transistor comprises:
Forming a gate electrode on the first substrate;
Forming a semiconductor layer on the gate electrode;
And forming a source electrode and a drain electrode on the semiconductor layer. A first substrate and a second substrate each including an image display section including a plurality of pixels and an image non-display section:
A thin film transistor formed on the first substrate;
A protective layer on the substrate on which the thin film transistor is formed;
A plurality of barrier ribs formed on the image display area on the protective layer;
A pixel electrode formed on the image display section on the protective layer;
A common electrode formed on the second substrate;
And an electrophoretic layer formed in an area between the plurality of partitions,
The barrier ribs may be formed of 5-50 wt% of glycidyl methacrylate, 10-30 wt% of hydroxyethyl methacrylate, 20-40 wt% of hezanediol diacrylate, 2- ( 1 to 20 wt% of an adhesion promoter such as 2- (carbomethoxy) ethyltrimethoxy silane, 1-3 wt% of a photoinitiator and 1-3 wt% of nano Ag The electrophoretic display device according to claim 1, 14. The thin film transistor as claimed in claim 13,
A gate electrode formed on the substrate;
A semiconductor layer formed on the gate electrode; And
And a source electrode and a drain electrode formed on the semiconductor layer. 14. The electrophoretic display element according to claim 13, wherein the electrophoretic layer comprises color particles having charge characteristics. 14. The electrophoretic display element according to claim 13, wherein the electrophoretic layer further comprises a dispersion medium. 17. The electrophoretic display device according to claim 16, wherein the dispersion medium comprises a transparent dispersion medium, a black dispersion medium or a color dispersion medium. 14. The electrophoretic display device according to claim 13, wherein the height of the barrier ribs is 10-100 mu m. 5-50 wt% of glycidyl methacrylate, 10-30 wt% of hydroxyethyl methacrylate, 20-40 wt% of hezanediol diacrylate, 2- (carbomethoxy 1-20w% adhesion promoter such as 2- (carbomethoxy) ethyltrimethoxy silane, 1-3w% photoinitiator such as Irgaure 369 and 1-3w% nano Ag (Nano Ag) Barrier rib composition.

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