KR101742478B1 - 광학적 종료점 검출 시스템 - Google Patents

광학적 종료점 검출 시스템 Download PDF

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Publication number
KR101742478B1
KR101742478B1 KR1020137031675A KR20137031675A KR101742478B1 KR 101742478 B1 KR101742478 B1 KR 101742478B1 KR 1020137031675 A KR1020137031675 A KR 1020137031675A KR 20137031675 A KR20137031675 A KR 20137031675A KR 101742478 B1 KR101742478 B1 KR 101742478B1
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South Korea
Prior art keywords
light
process chamber
processing device
light source
detection system
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KR1020137031675A
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English (en)
Korean (ko)
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KR20140033376A (ko
Inventor
바라수브라마니안 라마찬드란
마사토 이시이
아론 무이르 헌터
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어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20140033376A publication Critical patent/KR20140033376A/ko
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
    • B08B9/08—Cleaning containers, e.g. tanks
    • B08B9/46—Inspecting cleaned containers for cleanliness
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N2021/8411—Application to online plant, process monitoring
    • G01N2021/8416—Application to online plant, process monitoring and process controlling, not otherwise provided for

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Physical Vapour Deposition (AREA)
KR1020137031675A 2011-04-29 2012-04-27 광학적 종료점 검출 시스템 Active KR101742478B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161480839P 2011-04-29 2011-04-29
US61/480,839 2011-04-29
US13/440,564 2012-04-05
US13/440,564 US9347132B2 (en) 2011-04-29 2012-04-05 Optical endpoint detection system
PCT/US2012/035469 WO2012149331A2 (en) 2011-04-29 2012-04-27 Optical endpoint detection system

Publications (2)

Publication Number Publication Date
KR20140033376A KR20140033376A (ko) 2014-03-18
KR101742478B1 true KR101742478B1 (ko) 2017-06-15

Family

ID=47066950

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137031675A Active KR101742478B1 (ko) 2011-04-29 2012-04-27 광학적 종료점 검출 시스템

Country Status (7)

Country Link
US (2) US9347132B2 (enExample)
JP (1) JP6019105B2 (enExample)
KR (1) KR101742478B1 (enExample)
CN (1) CN103493192B (enExample)
SG (1) SG194450A1 (enExample)
TW (1) TWI538079B (enExample)
WO (1) WO2012149331A2 (enExample)

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US10047457B2 (en) 2013-09-16 2018-08-14 Applied Materials, Inc. EPI pre-heat ring
US10153141B2 (en) 2014-02-14 2018-12-11 Electronics And Telecommunications Research Institute Apparatus for monitoring gas and plasma process equipment including the same
US10053777B2 (en) * 2014-03-19 2018-08-21 Applied Materials, Inc. Thermal processing chamber
JP2018046044A (ja) * 2016-09-12 2018-03-22 大陽日酸株式会社 サセプタのクリーニング装置及びクリーニング方法
US10043641B2 (en) 2016-09-22 2018-08-07 Applied Materials, Inc. Methods and apparatus for processing chamber cleaning end point detection
CN109226131A (zh) * 2018-10-11 2019-01-18 武汉华星光电半导体显示技术有限公司 清洗终点监测方法以及监测装置
CN109365410B (zh) * 2018-10-17 2020-09-18 北京航天控制仪器研究所 一种实现高效激光清洗的加工头装置及清洗方法
CN114270487B (zh) * 2019-07-26 2025-10-10 应用材料公司 基板处理监控
US11708635B2 (en) 2020-06-12 2023-07-25 Applied Materials, Inc. Processing chamber condition and process state monitoring using optical reflector attached to processing chamber liner
US12009191B2 (en) 2020-06-12 2024-06-11 Applied Materials, Inc. Thin film, in-situ measurement through transparent crystal and transparent substrate within processing chamber wall
US12031910B2 (en) 2021-09-15 2024-07-09 Applied Materials, Inc. Transmission corrected plasma emission using in-situ optical reflectometry
US12467136B2 (en) 2022-03-16 2025-11-11 Applied Materials, Inc. Process characterization and correction using optical wall process sensor (OWPS)
US12469686B2 (en) 2022-03-16 2025-11-11 Applied Materials, Inc. Process characterization and correction using optical wall process sensor (OWPS)
USD1031743S1 (en) 2022-05-06 2024-06-18 Applied Materials, Inc. Portion of a display panel with a graphical user interface
US20250038040A1 (en) * 2023-07-27 2025-01-30 Applied Materials, Inc. Lift frames for central heating, and related processing chambers and methods
CN120072606A (zh) * 2023-11-28 2025-05-30 北京北方华创微电子装备有限公司 半导体工艺设备及其控制方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001519596A (ja) 1997-10-06 2001-10-23 アプライド マテリアルズ インコーポレイテッド 半導体ウェハのプロセスモニタリング装置およびその製造方法
JP2007507887A (ja) 2003-09-30 2007-03-29 東京エレクトロン株式会社 システム構成要素の状態をモニタリングするための方法

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JPH11140655A (ja) 1997-11-14 1999-05-25 Sony Corp プラズマ処理装置
JP3535785B2 (ja) 1999-11-26 2004-06-07 Ｎｅｃエレクトロニクス株式会社 クリーニング終点検出装置およびクリーニング終点検出方法
JP2002057149A (ja) * 2000-08-08 2002-02-22 Tokyo Electron Ltd 処理装置及びそのクリーニング方法
JP2002246320A (ja) 2001-02-20 2002-08-30 Hitachi Ltd プラズマ処理装置のプラズマクリーニング方法
JP2004047020A (ja) * 2002-07-15 2004-02-12 Fuji Electric Holdings Co Ltd 磁気ディスク媒体及び固定磁気ディスク装置
KR100844273B1 (ko) 2002-12-20 2008-07-07 동부일렉트로닉스 주식회사 챔버 세정장치
US20060021633A1 (en) 2004-07-27 2006-02-02 Applied Materials, Inc. Closed loop clean gas control
US7534469B2 (en) * 2005-03-31 2009-05-19 Asm Japan K.K. Semiconductor-processing apparatus provided with self-cleaning device
EP1926125B1 (en) * 2006-10-30 2011-02-16 Applied Materials, Inc. Endpoint detection for photomask etching
US8158526B2 (en) 2006-10-30 2012-04-17 Applied Materials, Inc. Endpoint detection for photomask etching
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Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2001519596A (ja) 1997-10-06 2001-10-23 アプライド マテリアルズ インコーポレイテッド 半導体ウェハのプロセスモニタリング装置およびその製造方法
JP2007507887A (ja) 2003-09-30 2007-03-29 東京エレクトロン株式会社 システム構成要素の状態をモニタリングするための方法

Also Published As

Publication number Publication date
TW201250906A (en) 2012-12-16
SG194450A1 (en) 2013-12-30
WO2012149331A2 (en) 2012-11-01
US10179354B2 (en) 2019-01-15
US20120273005A1 (en) 2012-11-01
CN103493192B (zh) 2016-08-17
JP2014518009A (ja) 2014-07-24
US20160263634A1 (en) 2016-09-15
US9347132B2 (en) 2016-05-24
JP6019105B2 (ja) 2016-11-02
KR20140033376A (ko) 2014-03-18
WO2012149331A3 (en) 2013-03-28
CN103493192A (zh) 2014-01-01
TWI538079B (zh) 2016-06-11

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