TWI538079B - 光學終點偵測系統 - Google Patents
光學終點偵測系統 Download PDFInfo
- Publication number
- TWI538079B TWI538079B TW101114953A TW101114953A TWI538079B TW I538079 B TWI538079 B TW I538079B TW 101114953 A TW101114953 A TW 101114953A TW 101114953 A TW101114953 A TW 101114953A TW I538079 B TWI538079 B TW I538079B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- processing chamber
- light source
- endpoint detection
- cover
- Prior art date
Links
- 238000001514 detection method Methods 0.000 title claims description 26
- 230000003287 optical effect Effects 0.000 title description 2
- 238000012545 processing Methods 0.000 claims description 106
- 238000000034 method Methods 0.000 claims description 91
- 230000008569 process Effects 0.000 claims description 70
- 238000004140 cleaning Methods 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 37
- 238000000151 deposition Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 5
- 230000003749 cleanliness Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 38
- 230000007547 defect Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000012544 monitoring process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 210000003423 ankle Anatomy 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
- B08B9/46—Inspecting cleaned containers for cleanliness
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N2021/8411—Application to online plant, process monitoring
- G01N2021/8416—Application to online plant, process monitoring and process controlling, not otherwise provided for
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161480839P | 2011-04-29 | 2011-04-29 | |
| US13/440,564 US9347132B2 (en) | 2011-04-29 | 2012-04-05 | Optical endpoint detection system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201250906A TW201250906A (en) | 2012-12-16 |
| TWI538079B true TWI538079B (zh) | 2016-06-11 |
Family
ID=47066950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101114953A TWI538079B (zh) | 2011-04-29 | 2012-04-26 | 光學終點偵測系統 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9347132B2 (enExample) |
| JP (1) | JP6019105B2 (enExample) |
| KR (1) | KR101742478B1 (enExample) |
| CN (1) | CN103493192B (enExample) |
| SG (1) | SG194450A1 (enExample) |
| TW (1) | TWI538079B (enExample) |
| WO (1) | WO2012149331A2 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10047457B2 (en) | 2013-09-16 | 2018-08-14 | Applied Materials, Inc. | EPI pre-heat ring |
| US10153141B2 (en) | 2014-02-14 | 2018-12-11 | Electronics And Telecommunications Research Institute | Apparatus for monitoring gas and plasma process equipment including the same |
| US10053777B2 (en) * | 2014-03-19 | 2018-08-21 | Applied Materials, Inc. | Thermal processing chamber |
| JP2018046044A (ja) * | 2016-09-12 | 2018-03-22 | 大陽日酸株式会社 | サセプタのクリーニング装置及びクリーニング方法 |
| US10043641B2 (en) | 2016-09-22 | 2018-08-07 | Applied Materials, Inc. | Methods and apparatus for processing chamber cleaning end point detection |
| CN109226131A (zh) * | 2018-10-11 | 2019-01-18 | 武汉华星光电半导体显示技术有限公司 | 清洗终点监测方法以及监测装置 |
| CN109365410B (zh) * | 2018-10-17 | 2020-09-18 | 北京航天控制仪器研究所 | 一种实现高效激光清洗的加工头装置及清洗方法 |
| KR102774924B1 (ko) * | 2019-07-26 | 2025-02-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 프로세싱 모니터링 |
| US12009191B2 (en) | 2020-06-12 | 2024-06-11 | Applied Materials, Inc. | Thin film, in-situ measurement through transparent crystal and transparent substrate within processing chamber wall |
| US11708635B2 (en) | 2020-06-12 | 2023-07-25 | Applied Materials, Inc. | Processing chamber condition and process state monitoring using optical reflector attached to processing chamber liner |
| US12031910B2 (en) | 2021-09-15 | 2024-07-09 | Applied Materials, Inc. | Transmission corrected plasma emission using in-situ optical reflectometry |
| US12467136B2 (en) | 2022-03-16 | 2025-11-11 | Applied Materials, Inc. | Process characterization and correction using optical wall process sensor (OWPS) |
| US12469686B2 (en) | 2022-03-16 | 2025-11-11 | Applied Materials, Inc. | Process characterization and correction using optical wall process sensor (OWPS) |
| USD1031743S1 (en) | 2022-05-06 | 2024-06-18 | Applied Materials, Inc. | Portion of a display panel with a graphical user interface |
| US20250038040A1 (en) * | 2023-07-27 | 2025-01-30 | Applied Materials, Inc. | Lift frames for central heating, and related processing chambers and methods |
| CN120072606A (zh) * | 2023-11-28 | 2025-05-30 | 北京北方华创微电子装备有限公司 | 半导体工艺设备及其控制方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6129807A (en) | 1997-10-06 | 2000-10-10 | Applied Materials, Inc. | Apparatus for monitoring processing of a substrate |
| JPH11140655A (ja) | 1997-11-14 | 1999-05-25 | Sony Corp | プラズマ処理装置 |
| JP3535785B2 (ja) | 1999-11-26 | 2004-06-07 | Ｎｅｃエレクトロニクス株式会社 | クリーニング終点検出装置およびクリーニング終点検出方法 |
| JP2002057149A (ja) * | 2000-08-08 | 2002-02-22 | Tokyo Electron Ltd | 処理装置及びそのクリーニング方法 |
| JP2002246320A (ja) | 2001-02-20 | 2002-08-30 | Hitachi Ltd | プラズマ処理装置のプラズマクリーニング方法 |
| JP2004047020A (ja) * | 2002-07-15 | 2004-02-12 | Fuji Electric Holdings Co Ltd | 磁気ディスク媒体及び固定磁気ディスク装置 |
| KR100844273B1 (ko) | 2002-12-20 | 2008-07-07 | 동부일렉트로닉스 주식회사 | 챔버 세정장치 |
| US8460945B2 (en) | 2003-09-30 | 2013-06-11 | Tokyo Electron Limited | Method for monitoring status of system components |
| US20060021633A1 (en) * | 2004-07-27 | 2006-02-02 | Applied Materials, Inc. | Closed loop clean gas control |
| US7534469B2 (en) * | 2005-03-31 | 2009-05-19 | Asm Japan K.K. | Semiconductor-processing apparatus provided with self-cleaning device |
| US20080176149A1 (en) | 2006-10-30 | 2008-07-24 | Applied Materials, Inc. | Endpoint detection for photomask etching |
| ATE498901T1 (de) * | 2006-10-30 | 2011-03-15 | Applied Materials Inc | Endpunkterkennung für die atzung von photomasken |
| CN201182036Y (zh) | 2007-02-01 | 2009-01-14 | 应用材料股份有限公司 | 气体注入喷嘴 |
-
2012
- 2012-04-05 US US13/440,564 patent/US9347132B2/en active Active
- 2012-04-26 TW TW101114953A patent/TWI538079B/zh not_active IP Right Cessation
- 2012-04-27 WO PCT/US2012/035469 patent/WO2012149331A2/en not_active Ceased
- 2012-04-27 SG SG2013075577A patent/SG194450A1/en unknown
- 2012-04-27 KR KR1020137031675A patent/KR101742478B1/ko active Active
- 2012-04-27 JP JP2014508603A patent/JP6019105B2/ja active Active
- 2012-04-27 CN CN201280019970.5A patent/CN103493192B/zh active Active
-
2016
- 2016-05-23 US US15/162,160 patent/US10179354B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP6019105B2 (ja) | 2016-11-02 |
| US20120273005A1 (en) | 2012-11-01 |
| WO2012149331A3 (en) | 2013-03-28 |
| CN103493192B (zh) | 2016-08-17 |
| CN103493192A (zh) | 2014-01-01 |
| SG194450A1 (en) | 2013-12-30 |
| US9347132B2 (en) | 2016-05-24 |
| US10179354B2 (en) | 2019-01-15 |
| KR20140033376A (ko) | 2014-03-18 |
| TW201250906A (en) | 2012-12-16 |
| KR101742478B1 (ko) | 2017-06-15 |
| US20160263634A1 (en) | 2016-09-15 |
| WO2012149331A2 (en) | 2012-11-01 |
| JP2014518009A (ja) | 2014-07-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |