KR101727960B1 - 레이저를 이용한 상변화 메모리 제조방법 - Google Patents

레이저를 이용한 상변화 메모리 제조방법 Download PDF

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Publication number
KR101727960B1
KR101727960B1 KR1020160081125A KR20160081125A KR101727960B1 KR 101727960 B1 KR101727960 B1 KR 101727960B1 KR 1020160081125 A KR1020160081125 A KR 1020160081125A KR 20160081125 A KR20160081125 A KR 20160081125A KR 101727960 B1 KR101727960 B1 KR 101727960B1
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KR
South Korea
Prior art keywords
phase change
change material
laser beam
energy intensity
laser
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KR1020160081125A
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English (en)
Korean (ko)
Inventor
박홍진
최기철
김민호
Original Assignee
주식회사 비에스피
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Priority to KR1020160081125A priority Critical patent/KR101727960B1/ko
Application granted granted Critical
Publication of KR101727960B1 publication Critical patent/KR101727960B1/ko
Priority to PCT/KR2017/005992 priority patent/WO2018004147A1/fr

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    • H01L45/16—
    • H01L45/1253—
    • H01L45/144—
    • H01L45/1608—
    • H01L45/1625—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching

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  • Semiconductor Memories (AREA)
KR1020160081125A 2016-06-28 2016-06-28 레이저를 이용한 상변화 메모리 제조방법 KR101727960B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020160081125A KR101727960B1 (ko) 2016-06-28 2016-06-28 레이저를 이용한 상변화 메모리 제조방법
PCT/KR2017/005992 WO2018004147A1 (fr) 2016-06-28 2017-06-09 Procédé de fabrication d'une mémoire à changement de phase au moyen d'un laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020160081125A KR101727960B1 (ko) 2016-06-28 2016-06-28 레이저를 이용한 상변화 메모리 제조방법

Publications (1)

Publication Number Publication Date
KR101727960B1 true KR101727960B1 (ko) 2017-04-19

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ID=58705954

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Application Number Title Priority Date Filing Date
KR1020160081125A KR101727960B1 (ko) 2016-06-28 2016-06-28 레이저를 이용한 상변화 메모리 제조방법

Country Status (2)

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KR (1) KR101727960B1 (fr)
WO (1) WO2018004147A1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080040824A (ko) * 2006-11-06 2008-05-09 삼성전자주식회사 반도체 장치의 소자 분리 방법
KR20100063937A (ko) * 2008-12-04 2010-06-14 삼성전자주식회사 상변화 메모리 유닛, 이의 형성 방법 및 상변화 메모리 소자의 제조 방법
US8017432B2 (en) * 2010-01-08 2011-09-13 International Business Machines Corporation Deposition of amorphous phase change material
KR101823500B1 (ko) * 2011-07-11 2018-01-31 삼성전자주식회사 상변화 메모리 장치의 제조 방법
KR20150127367A (ko) * 2014-05-07 2015-11-17 삼성전자주식회사 개구 매립 방법 및 이를 이용한 상변화 메모리 소자의 제조 방법

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WO2018004147A1 (fr) 2018-01-04

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