KR101724702B1 - Light emitting device package and lighting system - Google Patents

Light emitting device package and lighting system Download PDF

Info

Publication number
KR101724702B1
KR101724702B1 KR1020100075002A KR20100075002A KR101724702B1 KR 101724702 B1 KR101724702 B1 KR 101724702B1 KR 1020100075002 A KR1020100075002 A KR 1020100075002A KR 20100075002 A KR20100075002 A KR 20100075002A KR 101724702 B1 KR101724702 B1 KR 101724702B1
Authority
KR
South Korea
Prior art keywords
lead frames
light emitting
emitting device
heat dissipation
heat
Prior art date
Application number
KR1020100075002A
Other languages
Korean (ko)
Other versions
KR20120012894A (en
Inventor
서태원
이종우
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020100075002A priority Critical patent/KR101724702B1/en
Publication of KR20120012894A publication Critical patent/KR20120012894A/en
Application granted granted Critical
Publication of KR101724702B1 publication Critical patent/KR101724702B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Led Device Packages (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)

Abstract

A light emitting device package according to an embodiment includes a body; A cavity formed on the body; A lead frame disposed on a side surface of the heat dissipation unit and including a plurality of first and second lead frames; And a light emitting device formed on the heat dissipating unit, wherein the plurality of first and second lead frames are formed to have a symmetrical structure with respect to the heat dissipating unit.

Description

[0001] LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM [0002]

The present invention relates to a light emitting device package and a lighting system.

III-V nitride semiconductors (group III-V nitride semiconductors) have been spotlighted as core materials for light emitting devices such as light emitting diodes (LEDs) and laser diodes (LD) due to their physical and chemical properties. The III-V group conductivity type semiconductor is usually made of a semiconductor material having a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + y? 1) .

BACKGROUND ART Light emitting diodes (LEDs) are a kind of semiconductor devices that convert the electric power to infrared rays or light using the characteristics of compound semiconductors, exchange signals, or use as a light source.

Light emitting devices for obtaining light of an LED or an LD using such a conductive semiconductor material, and have been applied as light sources for various products such as a keypad light emitting portion of a cell phone, an electric sign board, and a lighting device.

Embodiments provide a light emitting device package and a lighting system having a novel structure.

Embodiments provide a light emitting device package and an illumination system with improved reliability.

A light emitting device package according to an embodiment includes a body; A cavity formed on the body; A lead frame disposed on a side surface of the heat dissipation unit and including a plurality of first and second lead frames; And a light emitting device formed on the heat dissipating unit, wherein the heat dissipating unit includes a first surface facing the plurality of first lead frames and a second surface facing the plurality of second lead frames, Wherein the first surface includes recesses depressed in a direction toward the light emitting element in the plurality of first lead frames and the second surface is recessed in a direction toward the light emitting element in the plurality of second lead frames, As shown in Fig.

According to an embodiment, an illumination system includes an illumination system including a substrate and a light emitting device package mounted on the substrate, the light emitting device package including: a body; A cavity formed on the body; A lead frame disposed on a side surface of the heat dissipation unit and including a plurality of first and second lead frames; And a light emitting device formed on the heat dissipating unit, wherein the plurality of first and second lead frames are formed to have a symmetrical structure with respect to the heat dissipating unit.

Embodiments provide a light emitting device package and a lighting system having a novel structure.

Embodiments provide a light emitting device package and an illumination system with improved reliability.

1 is a perspective view illustrating a light emitting device package according to an embodiment;
Fig. 2 is a cross-sectional view showing a section cut along AA 'in Fig. 1
3 is a perspective view illustrating a light emitting device package according to another embodiment.
4 is a cross-sectional view illustrating a light emitting device package according to another embodiment
5 is a cross-sectional view illustrating a light emitting device package according to another embodiment
6 is a perspective view illustrating a light emitting device package according to yet another embodiment.
7 is a view illustrating a backlight unit including a light emitting device package according to embodiments
8 is a perspective view of a lighting unit including a light emitting device package according to embodiments.

In the description of the embodiments, each frame, layer, wire, part, chip or electrode is formed "on" or "under" of each frame, layer, wire, Quot; on "and" under "include both being formed" directly "or" indirectly " In addition, the upper or lower reference of each component is described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

Hereinafter, a light emitting device package and a lighting system according to an embodiment will be described with reference to the accompanying drawings.

Referring to FIG. 1, a light emitting device package according to an embodiment includes a body 100, a lead frame 205, and a light emitting device 400.

The body 100 is coupled with the lead frame 205 to support the lead frame 205. For example, the body 100 may be integrally formed with the lead frame 205 by injection molding.

The body 100 may be formed of a material having a high reflectance and may be formed of a material such as polyphthal amide (PPA), liquid crystal polymer (LCP), polyamide 9T (PA9T) And may include the same resin, metal, photo sensitive glass, sapphire (Al 2 O 3 ), ceramics, printed circuit board (PCB) and the like.

The body 100 may have various shapes depending on the use and design of the light emitting device package. For example, the planar shape of the body 100 may have various shapes such as a square shape and a circular shape.

A cavity 110 may be formed in the body 100 to open the upper portion and a transparent resin layer may be disposed in the cavity 110 to protect the light emitting device 400. The transparent resin layer may include a phosphor.

Although the planar shape of the cavity 110 is shown as a rectangular shape in the drawing, it may have various planar shapes such as a circular shape, a polygonal shape, and an elliptical shape.

The peripheral surface of the cavity 110 may be formed to be inclined at a predetermined angle with respect to the bottom surface thereof or perpendicular to the bottom surface thereof. When the cavity 110 has an inclined side surface, the angle formed by the side surface and the bottom surface of the cavity 110 may be 100 degrees to 170 degrees. At this time, the angle may be set to 120 degrees or more so that the light emitted from the light emitting device 400 can be well reflected.

A lead frame 205 may be disposed on the body 100. The lead frame 205 may include a heat dissipation unit 210, a plurality of first lead frames 220, and a plurality of second lead frames 230. The plurality of first lead frames 220 may include a first lead frame 220a and a first b lead frame 220b so as to be symmetrical with respect to the heat radiating portion 210 in the longitudinal and lateral directions, 2 lead frame 230 may include a 2a lead frame 230a and a 2b lead frame 230b.

The four lead frames 220a, 220b, 230a and 230b may be formed symmetrically with respect to the heat dissipating unit 210. At least one of the four lead frames 220a, 220b, 230a, (500) can be connected. A lead frame among the four lead frames 220a, 220b, 230a, and 230b, to which the wire 500 is not connected, may be disposed for a symmetric structure.

The wire 500 may be formed of gold or a symmetrical structure. For example, the first lead frame 220a and the second lead frame 230a may be arranged symmetrically with respect to the light emitting device 400 to be connected to the first b lead frame 220b and the second lead frame 230a from the light emitting device 400, And the second b lead frame 230b.

In the present embodiment, a plurality of first lead frames 220 and a plurality of second lead frames 230 are disposed on each of the right and left sides, but they may be arranged symmetrically and three or more of them may be disposed.

The spacing between the heat dissipation unit 210 and the plurality of first lead frames 220 and the plurality of second lead frames 230 may be symmetrical with respect to each other. The distance between the heat dissipation unit 210 and the plurality of first lead frames 220 and the plurality of second lead frames 230 may be in the range of 0.1 to 0.15 mm.

The heat dissipation unit 210 may be formed between the plurality of first lead frames 220 and the plurality of second lead frames 230 and may include the heat dissipation unit 210 and the plurality of first and second lead frames 220 and 230 May be arranged to be symmetrical with respect to each other.

The volume or mass of the first and second lead frames 220 and 230 may be the same. Also, the first and second lead frames 220 and 230 may be formed in various shapes within a range of a symmetric structure.

The lead frame 205 may be formed of a metal plate having a predetermined thickness, and another metal layer may be plated on the surface of the lead frame 205. The lead frame 205 may be made of a metal having excellent thermal conductivity. Examples of such metals include titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin .

The light emitting device 400 may be disposed on the heat dissipation unit 210. The heat dissipation unit 210 may be in direct contact with the light emitting device 400 and at least a portion of the light emitting device 400 may overlap the center of the heat dissipation unit 400 in a vertical direction.

The light emitting device 400 may be a compound semiconductor such as GaAs, AlGaAs, GaN, InGaN, or InGaAlP, and may be mounted in a chip form.

The light emitting device 400 may include a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer, and an electrode.

The first conductive semiconductor layer is a compound semiconductor of a group III-V element doped with a first conductive dopant, and has the formula In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? , 0? X + y? 1), for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP. When the first conductive semiconductor layer is an N-type semiconductor layer, the first conductive dopant includes N-type dopants such as Si, Ge, Sn, Se, and Te. The first conductive semiconductor layer may be formed as a single layer or a multilayer, but the present invention is not limited thereto.

The second conductivity type semiconductor layer is a compound semiconductor of a group III-V element doped with a second conductivity type dopant, and has the formula In x Al y Ga 1 -x- y N (0? X? 1, 0? , 0? X + y? 1), and can be selected from GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP. When the second conductive semiconductor layer is a P-type semiconductor layer, the second conductive dopant may include a P-type dopant such as Mg, Zn, and the like.

The active layer may be formed between the first conductive semiconductor layer and the second conductive semiconductor layer and may include a single quantum well structure, a multiple quantum well structure (MQW), a quantum dot structure, or a quantum wire structure. The active layer may be formed by a period of a well layer and a barrier layer, for example, a period of an InGaN well layer / GaN barrier layer or an InGaN well layer / AlGaN barrier layer, using a compound semiconductor material of a group III-V element.

A conductive clad layer may be formed on and / or below the active layer, and the conductive clad layer may be formed of an AlGaN-based semiconductor.

The light emitting device 400 may generate light by recombination of electrons and holes provided from the first and second conductive semiconductor layers in the active layer.

The plurality of first and second lead frames 220 and 230 may be disposed inside the body 100 and a portion of the plurality of first and second lead frames 220 and 230 may be exposed to the outside of the body 100 . In addition, a part of the first and second lead frames 220 and 230 may be exposed to the inside of the cavity 110.

According to the light emitting device package of the embodiment of the present invention, the heat dissipation unit 210 and the plurality of first and second lead frames 220 and 230 on both sides are arranged symmetrically with respect to the light emitting device 400, So that the distortion of the package due to the temperature distribution can be reduced.

2 is a cross-sectional view showing a section taken along the line A-A in Fig.

2, the heat dissipation unit 210 may be divided into a first heat dissipation plate 211 and a second heat dissipation plate 212 in the order of a step 215 and in close proximity to the light emitting device 400 . The thickness of the first heat dissipation plate 211 and the second heat dissipation plate 212 may be equal to each other and the thickness of the first heat dissipation plate 211 may be thicker or thinner than the thickness of the second heat dissipation plate 212 .

Although FIG. 2 shows a case where one step 215 is provided, it may be formed to have two or more steps 215. The first and second lead frames 220 and 230 as well as the heat dissipation unit 210 may be formed to have stepped portions.

Since the area of the first heat dissipation plate 211 is larger than the area of the second heat dissipation plate 212 as described above, the step 215 is formed, and the heat dissipation unit 210 and the plurality The first and second lead frames 220 and 230 can be prevented from being easily separated from the body 100.

3 is a perspective view illustrating a light emitting device package according to another embodiment.

3, the heat dissipation unit 210 in which the light emitting device 400 is disposed may be formed to have a concave portion 214 in a plane, and the heat dissipation unit 210 and the first and second lead frames 210, (220, 230) may be electrically connected by the wire (500). That is, the width of the central region 217 corresponding to the region where the light emitting device 400 is mounted in the heat dissipation unit 210 is greater than the width 217 of the central region corresponding to the region where the light emitting device 400 is not mounted, The second widths 216 and 218 are formed to be wide so that the heat dissipation unit 210 can form the recess 214 and the width of the center region 217 corresponding to the region in which the light emitting device 400 is mounted, May be formed to be wider than the first and second widths 216 and 218 of the outer region so that the heat radiating portion 210 may form a convex portion.

In this embodiment, the width of the horizontal portion is increased or decreased corresponding to the region where the light emitting device 400 is disposed in the heat dissipation portion 210, but the vertical portion may be similarly applied.

The widths 217 of the central region of the heat dissipation unit 210 corresponding to the region where the light emitting device 400 is mounted and the widths of the first region and the second region of the outer region corresponding to the region where the light emitting device 400 is not mounted, Since the widths of the two widths 216 and 218 are different from each other, the area of the side surface of the heat dissipation unit 210 increases and heat generated from the light emitting device 400 can be effectively emitted.

4 is a cross-sectional view illustrating a light emitting device package according to another embodiment. The top surface of the light emitting device 400 and the top surfaces of the first and second lead frames 220 and 230 are formed in a line so that the wire 500 can be prevented from being separated or twisted due to a difference in height. The thickness of the heat dissipation unit 210 and the first and second lead frames 220 and 230 may be in the range of 0.1 to 0.4 mm. For example, the heat dissipation unit 210 may have a thickness of 0.1 mm to 0.2 mm, and the first and second lead frames 220 and 230 may have a thickness of 0.2 mm to 0.3 mm. Since the thickness of the heat dissipation unit 210 is thin as described above, heat generated from the light emitting device 400 can be effectively emitted.

5 is a cross-sectional view illustrating a light emitting device package according to another embodiment. The upper surface of the light emitting device 400 and the upper surfaces of the first and second lead frames 220 and 230 are formed in the same line as the embodiment of FIG. 4. However, the heat dissipation unit 210, And the lower surfaces of the first and second electrodes 220 and 230 are formed on the same line. For example, the thickness of the first and second lead frames 220 and 230 may be 0.3 mm, the thickness of the light emitting device 400 may be 0.2 mm, and the thickness of the heat dissipating unit 210 may be 0.1 mm. . The top surfaces of the heat dissipation unit 210 and the first and second lead frames 220 and 230 are formed in a line so that the wire 500 can be prevented from being separated and twisted due to a difference in height, The adhesion to the substrate (not shown) can be improved and the heat dissipation can be effectively performed.

6 is a perspective view illustrating a light emitting device package according to another embodiment. 223, and 233 are formed on the side surfaces of the heat dissipation unit 210 and the first and second lead frames 220 and 230. The present embodiment is different from the embodiment of FIG. The protrusions 213, 223 and 233 may be formed by a method such as etching or may be formed in a vertical direction on the sides of the heat dissipation unit 210 and the first and second lead frames 220 and 230. Since the surface area of the heat dissipation unit 210 and the first and second lead frames 220 and 230 is increased by the protrusions and depressions 213, 223, and 233, the heat radiation effect can be enhanced.

7 is a view illustrating a backlight unit using the light emitting device package according to the embodiment. However, the backlight unit 1100 in Fig. 7 is an example of the illumination system, and the present invention is not limited thereto.

7, the backlight unit 1100 includes a bottom frame 1140, a light guide member 1120 disposed in the bottom frame 1140, at least one side surface of the light guide member 1120, And a light emitting module 1110 disposed in the light emitting module 1110. [ A reflective sheet 1130 may be disposed under the light guide member 1120.

The bottom frame 1140 may be formed as a box having an open upper surface to accommodate the light guide member 1120, the light emitting module 1110 and the reflective sheet 1130, Or a resin material, but the present invention is not limited thereto.

The light emitting module 1110 may include a substrate and a light emitting device package according to a plurality of embodiments mounted on the substrate. The plurality of light emitting device packages may provide light to the light guide member 1120.

As shown, the light emitting module 1110 may be disposed on at least one of the inner surfaces of the bottom frame 1140, thereby providing light toward at least one side of the light guide member 1120 can do.

The light emitting module 1110 may be disposed under the bottom frame 1140 and may provide light toward the bottom of the light guide member 1120 according to the design of the backlight unit 1100 The present invention is not limited thereto.

The light guide member 1120 may be disposed in the bottom frame 1140. The light guide member 1120 may guide the light provided from the light emitting module 1110 to a display panel (not shown) by converting the light into a surface light source.

The light guide member 1120 may be, for example, a light guide panel (LGP). The light guide plate may be formed of one of acrylic resin type such as PMMA (polymethyl methacrylate), polyethylene terephthlate (PET), polycarbonate (PC), COC and PEN (polyethylene naphthalate) resin.

An optical sheet 1150 may be disposed above the light guide member 1120.

The optical sheet 1150 may include at least one of, for example, a diffusion sheet, a light condensing sheet, a brightness increasing sheet, and a fluorescent sheet. For example, the optical sheet 1150 may be formed by laminating the diffusion sheet, the light condensing sheet, the brightness increasing sheet, and the fluorescent sheet. In this case, the diffusion sheet 1150 diffuses the light emitted from the light emitting module 1110 evenly, and the diffused light can be condensed by the condensing sheet into a display panel (not shown). At this time, the light emitted from the light condensing sheet is randomly polarized light, and the brightness increasing sheet can increase the degree of polarization of the light emitted from the light condensing sheet. The light converging sheet may be, for example, a horizontal or / and a vertical prism sheet. Further, the brightness enhancement sheet may be, for example, a Dual Brightness Enhancement film. Further, the fluorescent sheet may be a translucent plate or film containing a phosphor.

The reflective sheet 1130 may be disposed under the light guide member 1120. The reflective sheet 1130 can reflect light emitted through the lower surface of the light guide member 1120 toward the light exit surface of the light guide member 1120.

The reflective sheet 1130 may be formed of a resin material having high reflectance, for example, PET, PC, or PVC resin, but is not limited thereto.

8 is a perspective view of a lighting unit using the light emitting device package according to the embodiments. However, the illumination unit 1200 of Fig. 8 is an example of the illumination system, and is not limited thereto.

8, the lighting unit 1200 includes a case body 1210, a light emitting module 1230 installed on the case body 1210, and a power supply unit And may include receiving connection terminals 1220.

The case body 1210 is preferably formed of a material having a good heat dissipation property, and may be formed of, for example, a metal material or a resin material.

The light emitting module 1230 may include a substrate 300 and a light emitting device package 200 mounted on the substrate 300 according to at least one embodiment.

The substrate 300 may be a printed circuit pattern on an insulator. For example, the PCB 300 may be a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB . ≪ / RTI >

In addition, the substrate 300 may be formed of a material that efficiently reflects light, or may be formed of a color whose surface is efficiently reflected, for example, white, silver, or the like.

The light emitting device package 200 according to at least one embodiment may be mounted on the substrate 300. The light emitting device package 200 may include at least one light emitting diode (LED). The light emitting device may include a colored light emitting device that emits red, green, blue, or white colored light, and a UV light emitting device that emits ultraviolet (UV) light.

The light emitting module 1230 may be arranged to have various combinations of light emitting devices to obtain colors and brightness. For example, a white light emitting element, a red light emitting element, and a green light emitting element may be disposed in combination in order to secure a high color rendering index (CRI). Further, a fluorescent sheet may be further disposed on the path of light emitted from the light emitting module 1230, and the fluorescent sheet may change the wavelength of light emitted from the light emitting module 1230. For example, when the light emitted from the light emitting module 1230 has a blue wavelength band, the fluorescent sheet may include a yellow phosphor. Light emitted from the light emitting module 1230 passes through the fluorescent sheet, .

The connection terminal 1220 may be electrically connected to the light emitting module 1230 to supply power. 8, the connection terminal 1220 is connected to the external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1220 may be formed in a pin shape and inserted into an external power source, or may be connected to an external power source through a wire.

In the above-described illumination system, at least one of a light guide member, a diffusion sheet, a light condensing sheet, a brightness increasing sheet, and a fluorescent sheet is disposed on the path of light emitted from the light emitting module to obtain a desired optical effect.

As described above, the reliability of the illumination system according to the embodiments can be improved by including the light emitting device package according to the embodiments.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Claims (12)

Body;
A cavity formed on the body;
A frame including a plurality of first lead frames disposed on one side of the heat dissipation unit and a plurality of second lead frames disposed on the other side of the heat dissipation unit; And
And a light emitting device formed on the heat dissipation unit,
At least one of the plurality of first lead frames and at least one of the plurality of second lead frames is not electrically connected to the light emitting element,
Wherein the heat dissipating portion includes a first surface facing the plurality of first lead frames and a second surface facing the plurality of second lead frames, and the first surface includes a plurality of first lead frames, And a recessed portion recessed in a direction toward the light emitting element, and the second surface includes the recessed portion recessed in the direction from the plurality of second lead frames toward the light emitting element,
Wherein the heat dissipating unit includes a first heat dissipating plate and a second heat dissipating plate, the upper surface of the first heat dissipating plate is in surface contact with the upper surface of the second heat dissipating plate, and the width of the first heat dissipating plate is a width Lt; / RTI > package.
The semiconductor device according to claim 1, wherein a distance between the heat dissipation unit and the plurality of first lead frames is equal to a distance between the heat dissipation unit and the plurality of second lead frames, Wherein the plurality of second lead frames are formed in a symmetrical structure. The method according to claim 1,
A first wire connecting the light emitting element and the plurality of first lead frames, and a second wire connecting any one of the light emitting element and the plurality of second lead frames. The method according to claim 1,
Wherein a top surface of the light emitting element and an upper surface of the plurality of first and second lead frames are formed on a same line. The method according to claim 1,
And a concavo-convex pattern formed on exposed side surfaces of the heat dissipation part and the first and second lead frames. delete The method according to claim 1,
Wherein the body includes a first body and a second body disposed below the first body, the first body being disposed between the first heat-dissipating plate and the plurality of first lead frames, Is disposed between the second heat-dissipating plate and the plurality of first lead frames,
Wherein a width of the first body is smaller than a width of the second body, and a side surface of the first body and a side of the second body are in contact with a side surface of the plurality of first lead frames. 5. The method of claim 4,
Wherein a bottom surface of the heat dissipation unit and a bottom surface of the plurality of first and second lead frames are formed on a same line. 8. The method of claim 7,
Wherein the body is coupled with the plurality of first and second lead frames. The method according to claim 1,
Wherein a thickness of the first heat-dissipating plate is equal to or greater than a thickness of the second heat-dissipating plate. 8. The method of claim 7,
Wherein the upper surface of the light emitting device and the upper surfaces of the plurality of first and second lead frames are formed in the same line, and the lower surface of the first and second lead frames and the lower surface of the heat radiating portion are formed in the same line. package. In a lighting system,
Wherein the illumination system includes a substrate and a light emitting module including a light emitting device package mounted on the substrate,
Wherein the light emitting device package includes a package body, a first conductive layer and a second conductive layer provided on the package body, and a first conductive layer and a second conductive layer electrically connected to the first conductive layer and the second conductive layer, An illumination system comprising the light-emitting device according to any one of claims 7 to 11.
KR1020100075002A 2010-08-03 2010-08-03 Light emitting device package and lighting system KR101724702B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020100075002A KR101724702B1 (en) 2010-08-03 2010-08-03 Light emitting device package and lighting system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100075002A KR101724702B1 (en) 2010-08-03 2010-08-03 Light emitting device package and lighting system

Publications (2)

Publication Number Publication Date
KR20120012894A KR20120012894A (en) 2012-02-13
KR101724702B1 true KR101724702B1 (en) 2017-04-10

Family

ID=45836620

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100075002A KR101724702B1 (en) 2010-08-03 2010-08-03 Light emitting device package and lighting system

Country Status (1)

Country Link
KR (1) KR101724702B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11038091B2 (en) 2019-03-22 2021-06-15 Samsung Electronics Co., Ltd. Light-emitting device packages

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102034226B1 (en) * 2012-06-12 2019-10-18 엘지이노텍 주식회사 Illuminating device
KR101967736B1 (en) * 2012-07-27 2019-04-10 엘지이노텍 주식회사 Illuminating device
KR101967737B1 (en) * 2012-07-27 2019-04-10 엘지이노텍 주식회사 Illuminating device
KR101967739B1 (en) * 2012-07-27 2019-04-10 엘지이노텍 주식회사 Illuminating device
KR101967741B1 (en) * 2012-07-27 2019-04-10 엘지이노텍 주식회사 Illuminating device
KR102042228B1 (en) * 2018-03-09 2019-11-07 (주)코아시아 Light emitting diode package
KR102071426B1 (en) * 2019-04-02 2020-01-30 엘지이노텍 주식회사 Illuminating device
KR102073161B1 (en) * 2019-04-02 2020-02-04 엘지이노텍 주식회사 Illuminating device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100587020B1 (en) * 2004-09-01 2006-06-08 삼성전기주식회사 High power light emitting diode package

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930011190A (en) * 1991-11-14 1993-06-23 김광호 Semiconductor leadframe
KR20090039261A (en) * 2007-10-18 2009-04-22 삼성전기주식회사 Light emitting diode package
CN101779303B (en) * 2008-05-20 2011-06-15 松下电器产业株式会社 Semiconductor light-emitting device as well as light source device and lighting system including the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100587020B1 (en) * 2004-09-01 2006-06-08 삼성전기주식회사 High power light emitting diode package

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11038091B2 (en) 2019-03-22 2021-06-15 Samsung Electronics Co., Ltd. Light-emitting device packages

Also Published As

Publication number Publication date
KR20120012894A (en) 2012-02-13

Similar Documents

Publication Publication Date Title
KR101724702B1 (en) Light emitting device package and lighting system
EP2541598B1 (en) Light emitting device package
KR101125335B1 (en) Light emitting device, fabrication method of semiconductor light emitting device, and light emitting device package
JP2011216891A (en) Light-emitting device package and lighting system
KR20130014197A (en) The light emitting device package and the light emitting system
CN109390451B (en) Light emitting device package
KR101694175B1 (en) Light emitting device, Light emitting device package and Lighting system
KR101865918B1 (en) Light emitting device, method for fabricating the same, and light emitting device package
KR101896690B1 (en) Light emitting device and light emitting device package
KR101929873B1 (en) Light emitting device package, light unit, and display device
KR20110134735A (en) Light emitting device package and lighting unit using the same
KR20130054866A (en) The light emitting device package and the light emitting system
KR20130046286A (en) Light emitting device package and light uint
KR20130057903A (en) The light emitting device package
KR20120004601A (en) The light emitting apparatus, the method for manufacturing the same, and the light system
KR20120013824A (en) Light emitting device package and lighting system
KR101714073B1 (en) The light emitting device package and the light emitting system
KR101830137B1 (en) The light emitting device package and the light emitting system
KR101977279B1 (en) Light Emitting Diode Package
KR20130014263A (en) Light emitting device
KR101852566B1 (en) Light emitting device, light emitting device package, and light unit
KR101064010B1 (en) Light emitting device and lighting unit using the same
KR20120057670A (en) Light emitting device, method for fabricating the light emitting device, light emitting device package and lighting system
KR20150042161A (en) The light emitting device package and the light emitting system
KR101028242B1 (en) Light emitting device and lighting unit using the same

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E90F Notification of reason for final refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant