KR101680938B1 - 연마 패드의 표면 거칠기 측정 방법 - Google Patents

연마 패드의 표면 거칠기 측정 방법 Download PDF

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KR101680938B1
KR101680938B1 KR1020140107747A KR20140107747A KR101680938B1 KR 101680938 B1 KR101680938 B1 KR 101680938B1 KR 1020140107747 A KR1020140107747 A KR 1020140107747A KR 20140107747 A KR20140107747 A KR 20140107747A KR 101680938 B1 KR101680938 B1 KR 101680938B1
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South Korea
Prior art keywords
polishing pad
surface roughness
polishing
height
roughness
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KR1020140107747A
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Korean (ko)
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KR20150022688A (ko
Inventor
히사노리 마츠오
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가부시키가이샤 에바라 세이사꾸쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/303—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces using photoelectric detection means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
KR1020140107747A 2013-08-22 2014-08-19 연마 패드의 표면 거칠기 측정 방법 Active KR101680938B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013172218A JP6010511B2 (ja) 2013-08-22 2013-08-22 研磨パッドの表面粗さ測定方法
JPJP-P-2013-172218 2013-08-22

Publications (2)

Publication Number Publication Date
KR20150022688A KR20150022688A (ko) 2015-03-04
KR101680938B1 true KR101680938B1 (ko) 2016-11-29

Family

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KR1020140107747A Active KR101680938B1 (ko) 2013-08-22 2014-08-19 연마 패드의 표면 거칠기 측정 방법

Country Status (5)

Country Link
US (1) US9393670B2 (https=)
JP (1) JP6010511B2 (https=)
KR (1) KR101680938B1 (https=)
CN (1) CN104422408B (https=)
TW (1) TWI573659B (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9685342B2 (en) * 2014-12-11 2017-06-20 GlobalFoundries, Inc. Wafer processing apparatuses and methods of operating the same
JP6809779B2 (ja) * 2015-08-25 2021-01-06 株式会社フジミインコーポレーテッド 研磨パッド、研磨パッドのコンディショニング方法、パッドコンディショニング剤、それらの利用
JP7023455B2 (ja) * 2017-01-23 2022-02-22 不二越機械工業株式会社 ワーク研磨方法およびワーク研磨装置
KR102683416B1 (ko) * 2017-02-15 2024-07-23 삼성전자주식회사 화학 기계적 연마 장치
US10675732B2 (en) 2017-04-18 2020-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for CMP pad conditioning
CN107292051A (zh) * 2017-07-07 2017-10-24 湘潭大学 一种硬质合金刀片化学机械抛光表面粗糙度的预测方法
KR102570853B1 (ko) * 2017-08-10 2023-08-25 도쿄엘렉트론가부시키가이샤 기판 이면 연마 부재의 드레싱 장치 및 드레싱 방법
JP6948878B2 (ja) 2017-08-22 2021-10-13 ラピスセミコンダクタ株式会社 半導体製造装置及び半導体基板の研磨方法
CN109702650A (zh) * 2017-10-26 2019-05-03 长鑫存储技术有限公司 研磨垫修整方法、化学机械研磨方法及装置
KR102580487B1 (ko) * 2018-06-18 2023-09-21 주식회사 케이씨텍 패드 모니터링 장치 및 이를 포함하는 패드 모니터링 시스템, 패드 모니터링 방법
US10926523B2 (en) * 2018-06-19 2021-02-23 Sensel, Inc. Performance enhancement of sensors through surface processing
US11359906B2 (en) 2020-05-29 2022-06-14 Ta Liang Technology Co., Ltd. Method, system and apparatus for uniformed surface measurement
US11759909B2 (en) * 2020-06-19 2023-09-19 Sk Enpulse Co., Ltd. Polishing pad, preparation method thereof and method for preparing semiconductor device using same
US20230390882A1 (en) * 2022-06-06 2023-12-07 Taiwan Semiconductor Manufacturing Company, Ltd. System, control method and apparatus for chemical mechanical polishing
US12519020B2 (en) * 2022-06-17 2026-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool and methods of operation
CN115388817B (zh) * 2022-10-27 2023-03-24 山东微晶自动化有限公司 基于图像处理分析实现铸造件打磨质量检测的方法
CN115890473A (zh) * 2022-12-15 2023-04-04 西安奕斯伟材料科技有限公司 抛光设备及抛光垫检测方法
CN116237845B (zh) * 2023-03-17 2026-04-17 山西农业大学 一种基于图像分析的树木年轮辅助磨削设备
CN116372781B (zh) * 2023-04-20 2023-11-07 山东欣立得光电科技有限公司 一种led屏幕衬底自动化清洗抛光系统
JP2024178702A (ja) * 2023-06-13 2024-12-25 株式会社Sumco 研磨パッドのドレッシング条件設定方法、ウェーハの片面研磨方法、ウェーハの製造方法、研磨パッドのドレッシング条件設定装置およびウェーハの片面研磨装置
CN120326444B (zh) * 2025-06-20 2025-08-19 嘉兴翼波精密制造有限公司 基于视觉识别的精密制造抛光方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5708506A (en) * 1995-07-03 1998-01-13 Applied Materials, Inc. Apparatus and method for detecting surface roughness in a chemical polishing pad conditioning process
JPH1086056A (ja) * 1996-09-11 1998-04-07 Speedfam Co Ltd 研磨パッドの管理方法及び装置
JP3632500B2 (ja) * 1999-05-21 2005-03-23 株式会社日立製作所 回転加工装置
AU2003225999A1 (en) * 2002-03-25 2003-10-13 Thomas West, Inc Smooth pads for cmp and polishing substrates
TWI228768B (en) * 2002-08-08 2005-03-01 Jsr Corp Processing method of polishing pad for semiconductor wafer and polishing pad for semiconductor wafer
US7235488B2 (en) * 2002-08-28 2007-06-26 Micron Technology, Inc. In-situ chemical-mechanical planarization pad metrology using ultrasonic imaging
US6872132B2 (en) * 2003-03-03 2005-03-29 Micron Technology, Inc. Systems and methods for monitoring characteristics of a polishing pad used in polishing micro-device workpieces
US7018269B2 (en) 2003-06-18 2006-03-28 Lam Research Corporation Pad conditioner control using feedback from a measured polishing pad roughness level
JP2005347568A (ja) * 2004-06-03 2005-12-15 Ebara Corp 基板研磨方法及び基板研磨装置
TWI290504B (en) * 2003-07-17 2007-12-01 Jsr Corp Chemical mechanical polishing pad and chemical mechanical polishing method
JP4206318B2 (ja) * 2003-09-17 2009-01-07 三洋電機株式会社 研磨パッドのドレッシング方法及び製造装置
JP2005260185A (ja) 2004-03-15 2005-09-22 Nitta Haas Inc 研磨パッド
JP2005333121A (ja) 2004-04-21 2005-12-02 Jsr Corp 化学機械研磨パッド及びその製造方法並びに化学機械研磨方法
KR100640141B1 (ko) 2004-04-21 2006-10-31 제이에스알 가부시끼가이샤 화학 기계 연마 패드 및 그 제조 방법 및 화학 기계 연마방법
JP4756583B2 (ja) * 2005-08-30 2011-08-24 株式会社東京精密 研磨パッド、パッドドレッシング評価方法、及び研磨装置
TWI381904B (zh) * 2009-12-03 2013-01-11 Nat Univ Chung Cheng The method of detecting the grinding characteristics and service life of the polishing pad
US9138860B2 (en) * 2010-04-20 2015-09-22 Applied Materials, Inc. Closed-loop control for improved polishing pad profiles
TW201246342A (en) * 2010-12-13 2012-11-16 Saint Gobain Abrasives Inc Chemical mechanical planarization (CMP) pad conditioner and method of making
KR101144981B1 (ko) * 2011-05-17 2012-05-11 삼성전자주식회사 Ｃｍｐ 패드 컨디셔너 및 상기 ｃｍｐ 패드 컨디셔너 제조방법

Also Published As

Publication number Publication date
TWI573659B (zh) 2017-03-11
US20150056891A1 (en) 2015-02-26
JP6010511B2 (ja) 2016-10-19
US9393670B2 (en) 2016-07-19
CN104422408B (zh) 2018-05-18
TW201515769A (zh) 2015-05-01
CN104422408A (zh) 2015-03-18
JP2015041700A (ja) 2015-03-02
KR20150022688A (ko) 2015-03-04

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