KR101672396B1 - Quaternary nitride semiconductor power device and manufacturing method thereof - Google Patents
Quaternary nitride semiconductor power device and manufacturing method thereof Download PDFInfo
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- 150000004767 nitrides Chemical group 0.000 title claims abstract description 93
- 239000004065 semiconductor Substances 0.000 title abstract description 53
- 238000004519 manufacturing process Methods 0.000 title description 10
- 230000010287 polarization Effects 0.000 claims abstract description 64
- 239000000203 mixture Substances 0.000 claims abstract description 40
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 30
- 229910052738 indium Inorganic materials 0.000 claims abstract description 29
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 23
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 97
- 229910002601 GaN Inorganic materials 0.000 abstract description 89
- 238000010586 diagram Methods 0.000 description 16
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000002269 spontaneous effect Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004969 ion scattering spectroscopy Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- General Physics & Mathematics (AREA)
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- Junction Field-Effect Transistors (AREA)
Abstract
The gallium nitride quaternary nitride semiconductor power semiconductor device according to the present invention comprises a gallium nitride buffer layer formed on a substrate, a quaternary nitride layer formed on the gallium nitride buffer layer, and a gallium nitride cap layer formed on the quaternary nitride layer, wherein the composition ratio of the quaternary nitride layer So that the polarization direction is directed to the upper surface of the quaternary nitride layer so that the two-dimensional electron gas is formed on the upper end of the quaternary nitride layer. The quaternary nitride is composed of four kinds of elements of In, Al, Ga and N, and In and Al have a predetermined composition ratio so that compressive stress acts on the quaternary nitride layer and the polarization of the quaternary nitride layer And is adjusted to face upward.
Description
BACKGROUND OF THE
Power semiconductor devices are devices with control and conversion functions that distribute power to the system, and are used in power supplies and power converters to save energy and shrink the product. It is a device for supplying electric power to various electric devices such as AC / DC conversion, motors, or stably supplying desired voltage and current. It is applied to pivotal electronic applications such as computing communication appliances and household electric vehicles. In recent years, The application area is expanding in conjunction with the development of electric vehicles. R & D related to high-speed switching, minimization of power loss, small chip size, heat treatment, etc. contributes to call and eco-friendliness of various parts used in display / LED drive IC, portable equipment, home appliances, renewable / .
Power semiconductor devices are optimized for power conversion and control, largely classified as silicon-based devices and compound-based devices. Silicon-based devices are high-voltage, high-current, high-frequency hydrated, bipolar, IGBT, TDMOS and LDMOS. Compound-based devices are SiC (silicon carbide) devices and GaN (gallium nitride) to be.
Silicon-based power semiconductors are emerging with new devices such as gallium nitride, which have high power dissipation and high power transfer efficiency due to low power transfer efficiency in high voltage environments. GaN power semiconductor devices have advantages of wide bandgap characteristics and high temperature (700 ℃) stability, and they are emerging as core devices for next generation energy saving as well as high power power amplifiers and high power switching devices.
On the other hand, HEMT (High Electron Mobility Transistor) is a kind of field-effect transistor that uses a heterojunction of two materials having different energy band gaps as a channel. A two-dimensional electron gas (2DEG) is generated at the hetero-junction interface of the HEMT. Since the electron is hardly susceptible to ion scattering, it has a significantly higher mobility than a carrier in a general semiconductor. In addition, electrons are constrained in the z-axis direction at the heterojunction, but they move freely in the two-dimensional plane (xy plane) and function as a carrier having high mobility. Therefore, It is possible to make a FET with excellent characteristics.
FIGS. 1 and 2 show the basic structure and energy band edge diagram of a HEMT using a 2DEG as an example of an n-AlGaAs / i-GaAs / Si-GaAs HEMT. FIG. 1 shows a hetero-junction structure of an n-AlGaAs / i-GaAs / Si-GaAs HEMT, wherein a 2DEG layer is formed at the junction interface of the epitaxially grown AlGaAs and GaAs and a gate electrode is provided at the top surface of the AlGaAs.
FIG. 2 is an energy band diagram of the HEMT in the equilibrium state of FIG. 1, wherein the conduction band edge (E C ) and E F (Fermi Energy) determine the electron density in the 2DEG.
On the other hand, AlGaN / GaN based HEMTs are attracting attention as microwave applications and power semiconductor devices due to wide band-gap, high breakdown field and excellent channel characteristics.
AlGaN / GaN / SiC based HEMTs grown on Ga-face show potential as power amplifiers from L-band (40 ~ 60 GHz) to W-band (75 ~ 110 GHz) Is excellent. InAlN / GaN structures HEMTs have also been fabricated in such a way that the top surface of the HEMTs grows to be a gallium surface. In recent years, a device is fabricated by growing to a nitrogen surface.
N-face AlGaN / GaN / SiC based HEMTs have small gate leakage current and can operate in E-mode (Enhancement mode) without gate recession. Also, carrier confinement is improved under reverse bias in GaN / AlGaN / GaN structure, and contact resistance of source / drain electrode can be reduced. However, the surface of the nitrogen plane structure is rough during growth, so that the crystal quality is lowered compared with the gallium plane device, and the electron mobility is lowered.
The present invention solves the problem of deterioration in crystal quality at a hetero-junction interface, which is a disadvantage of nitrogen-side HEMTs, while at the same time improving the low gate leakage current, improving carrier confinement, enabling E-mode operation, And a method of manufacturing the same.
According to an aspect of the present invention, there is provided a power semiconductor device including a quaternary nitride layer according to an embodiment of the present invention, the quaternary nitride layer having a polarization direction directed to the upper surface of the quaternary nitride layer, And a gas is formed on the top of the quaternary nitride layer. Wherein the quaternary nitride layer is a gallium nitride quaternary nitride layer grown so that a gallium surface is formed on the upper surface and the four kinds of elements constituting the quaternary nitride layer have a predetermined composition ratio, And is preferably formed on the top of the nitride layer.
The quaternary nitride layer is composed of four kinds of elements of In, Al, Ga and N, and In and Al have a predetermined composition ratio so that compressive stress acts on the quaternary nitride layer, Is preferably oriented in the upper direction.
The quaternary nitride layer may be formed on the gallium nitride buffer layer formed on the substrate, further comprising a gallium nitride cap layer formed on the quaternary nitride layer, and a gallium surface may be formed on the gallium nitride layer.
It is preferable that the quaternary nitride layer is made of In x Al y Ga 1-xy N (0 <x <0.5, 0 <y <0.5).
The composition x of In is preferably 0.1 or more and 0.5 or less, and the composition y of Al is preferably 0.05 or more and 0.2 or less.
A two-dimensional electron gas is formed on the upper part of the quaternary nitride layer to form a bureid channel of the HEMT.
The gallium nitride cap layer is preferably 1 nm to 30 nm, and the quaternary nitride layer is preferably 1 nm to 30 nm.
A method of fabricating a quaternary nitride semiconductor power semiconductor device according to an embodiment of the present invention includes: forming a GaN buffer layer on a substrate; A quaternary nitride layer forming step of epitaxially growing a quaternary nitride layer made of four kinds of elements including Ga and N on the GaN buffer layer; And a cap layer formation step of growing a GaN cap layer on the quaternary nitride layer; . In the formation of the quaternary nitride layer, the polarization of the quaternary nitride layer may be controlled to adjust the formation position of the two-dimensional electron gas.
The two-dimensional electron gas is formed at a contact interface between the quaternary nitride layer and the GaN cap layer.
The quaternary nitride layer is composed of four kinds of elements of In, Al, Ga and N, and the polarization of the quaternary nitride layer can be determined by the composition ratio of In and Al.
The quaternary nitride layer may be made of In x Al y Ga 1-xy N (0 <x <0.5, 0 <y <0.5). The composition x of In is 0.1 or more and 0.5 or less, and the composition y of Al is preferably 0.05 or more and 0.2 or less.
And forming a gate electrode, a source electrode, and a drain electrode on the GaN cap layer.
Wherein a compressive stress is applied to the quaternary nitride layer in the step of forming the quaternary nitride layer, the polarization direction of the quaternary nitride layer is directed upward, and the two-dimensional electron gas is in contact with the interface between the quaternary nitride layer and the GaN cap layer As shown in Fig.
Dimensional electron gas may be formed on the upper portion of the quaternary nitride layer to form a bureid channel of the HEMT.
According to the power semiconductor device and the method of manufacturing the same according to the present invention, the polarization of the quaternary nitride semiconductor is controlled to control the formation position of the two-dimensional electron gas, and thereby the low gate leakage current gallium surface HEMT Can be implemented.
In addition, the gallium-quaternary semiconductor power semiconductor device according to the present invention can operate in E-mode (Enhancement mode) without gate recess. The inclination of Ec relative to the substrate side is increased, the leakage current is reduced, the carrier confinement is improved, and the contact resistance of the source / drain electrode is reduced.
In addition, as the gallium-surface HEMT, the interface crystal quality is excellent at the heterojunction interface.
The power semiconductor device according to an embodiment of the present invention has an effect of increasing the degree of freedom in designing and manufacturing the device structure.
1 is a schematic view showing a hetero-junction structure of an n-AlGaAs / i-GaAs / Si-GaAs HEMT.
2 is an energy band diagram corresponding to the HEMT of FIG.
FIG. 3 is a diagram showing a heterostructure of a conventional gallium nitride (Ga-face) nitride semiconductor device and a corresponding band gap diagram.
4 is a schematic diagram of a heterostructure of a gallium nitride quaternary nitride semiconductor device according to an embodiment of the present invention, and a corresponding band gap diagram.
Fig. 5 schematically shows the polarization induction charge (sigma) and the 2DEG formation position according to the polarization change of the quaternary nitride semiconductor.
6 is a graph showing a correlation between lattice constants and energy band gaps of various nitride semiconductors of AlN, Al x Ga 1-x N, GaN, Ga x In 1-x N, Al x In 1-x N, InN to be.
FIG. 7 is a graph showing the relationship between the composition of In and Al of InAlGaN and the polarization induced charge density thereof.
8 is a graph showing the relation of lattice constant according to the composition of In and Al in InAlGaN.
FIG. 9 is a table showing experimental values in four samples having different compositions of In and Al.
10 is a graph showing the relationship between the polarization induced charge density according to the composition ratio of Al (aluminum) and In (indium, indium) in In x Al y Ga 1-xy N / GaN.
11 is a table showing the strain and polarization induced charges in
12 is a bandgap diagram for
13 (a) is a schematic view showing a 2DEG formation position in a basic structure of a conventional gallium-sided InAlGaN / GaN-based power semiconductor device.
13 (b) is a schematic diagram of a GaAs-based InAlGaN / GaN-based power semiconductor device according to an embodiment of the present invention.
FIG. 14 is a schematic view illustrating a method and structure of a multi-layer multi-channel monolithic device according to another embodiment of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
3 (a) and 3 (b) are views showing a heterostructure of a conventional Ga-face quaternary nitride semiconductor device and a corresponding band gap diagram.
3 (a), a conventional GaN quaternary nitride semiconductor device has a GaN (Gallium Nitride) layer formed on a substrate, an InAlGaN (Indium Aluminum Gallium Nitride) layer formed on the GaN layer, The second GaN layer is formed as a cap layer thereon, and gate, drain, and source electrodes are formed thereon to form devices. An electrode may be directly formed on the InAlGaN layer without forming the second GaN layer.
The polarization (P) of the nitride semiconductor is composed of spontaneous polarization (P SP ) and strain polarization (P PE ) due to stress. Of the spontaneous polarization is, but properties of the material itself, the strain polarization (P PE) the direction of the strain polarization (P PE) by the stress acting on the nitride semiconductor is determined, the spontaneous polarization (P SP) and strain polarization (P PE) The total polarization P is determined by synthesis.
The tensile stress acts on the InAlGaN layer formed on the GaN layer due to the difference between the lattice constants of the GaN layer and the InAlGaN layer in the GaN / InAlGaN / GaN structure of the gallium plane, and strain polarization is caused by this tensile stress. This strain polarization determines the total polarization of the InAlGaN layer, which produces a polarization induced charge at the bonding interface without the dopant. This polarization induced charge forms a 2DEG at the interface with the first GaN (Gallium Nitride) layer under the InAlGaN layer. Fig. 3 (a) schematically shows the tensile force in the GaN / InAlGaN / GaN structure of the gallium plane and the 2DEG due to the polarization and polarization induced charges.
FIG. 3 (b) is an energy bandgap diagram of the GaN / InAlGaN / GaN structure of FIG. 3 (a) and shows the energy bandgap diagram at the interface with the first GaN (Gallium Nitride) layer under the InAlGaN layer, At a depth of 50 nm, a quantum well can be identified, which is where the 2DEG is generated.
In the conventional InAlGaN barrier, a 2DEG is formed at the bottom of the InAlGaN layer to operate in the D-mode (depletion mode). In this case, unlike the HEMT based on the nitrogen plane AlGaN / GaN / SiC, It can not operate in E-mode (Enhancement mode).
The present invention proposes a quaternary nitride-based power semiconductor device having various advantages of a nitrogen-based nitride-based HEMT while maintaining gallium surface growth in order to overcome the problem of interfacial crystal quality deterioration of the nitrogen surface-nitride power semiconductor, and a method of manufacturing the same .
4 (a) and 4 (b) are schematic diagrams of a heterostructure of a gallium nitride quaternary nitride semiconductor device according to an embodiment of the present invention and corresponding band gap diagrams.
4A, a gallium nitride quaternary nitride semiconductor device includes a GaN (Gallium Nitride) layer formed on a sapphire, silicon, or silicon carbide substrate (not shown), an InAlGaN Indium Aluminum Gallium Nitride) layer is epitaxially grown, and a second GaN layer is formed thereon. Here, each layer is formed such that the gallium surface is on the upper surface. When the stress acting on InAlGaN is controlled, the direction of total polarization can be reversed and the position where the secondary electron gas (2DEG) is formed can be changed to realize a device capable of a buried channel structure different from the gallium-side HEMT structure .
According to Fig. 4 (a), when compressive strain is generated in InAlGaN instead of tensile strain in the GaN / InAlGaN / GaN structure of gallium plane (to be described later in relation to the control of stress) A strain polarization (P PE ) toward a second GaN (Gallium Nitride) layer on top of the nAlGaN layer is generated by the second GaN layer, and the 2DEG is formed at the interface with the second GaN (Gallium Nitride) layer which is the upper part of the InAlGaN layer. Fig. 4 (a) schematically shows the compressive stress in this GaN / InAlGaN / GaN structure and the 2DEG due to polarization and polarization induced charges.
In other words, by controlling the polarization of the gallium plane InAlGaN, the buried channel, which was possible in the nitrogen plane HEMT, can be formed in the gallium plane HEMT, thereby realizing various advantages of the nitrogen plane HEMT without deteriorating the crystal quality.
4 (b) shows an energy bandgap diagram corresponding to the structure of FIG. 4 (a). At the interface with a second GaN (Gallium Nitride) layer above the InAlGaN layer, We can identify a quantum well, which is where the 2DEG is generated.
5 (a) to 5 (d) show that the positions of the 2DEG formation are changed as the polarization of the quaternary nitride semiconductor is changed by the spontaneous polarization P SP , the polarization by stress P PE , the total polarization P, And is schematically shown using an induced charge ().
FIG. 5A shows a case where a tensile stress is generated in the InAlGaN layer. At this time, 2DEG is formed at the interface between the InAlGaN and the lower GaN layer, and the charge density (x, y) 1).
Equation (1)
5 (b) shows a case where a relatively small compressive stress is generated in the InAlGaN layer. At this time, the 2DEG is formed at the interface between the InAlGaN and the lower GaN layer, but the charge density (x, y) a). At this time, the polarization induced charge density (x, y) is obtained as shown in equation (2).
Equation (2)
5 (c) shows a case where the composite polarization of the polarization due to the compressive stress generated in the InAlGaN layer is the same as the polarization of the GaN layer. In this case, the charge density (x, y) do. That is, the polarization induced charge density (x, y)
Respectively.
In Fig. 5 (d), the compressive stress increases and the polarization of InAlGaN is reversed, so that a 2DEG is formed at the interface between the InAlGaN and the upper GaN layer. The polarization-induced charge density (x, y) induced at the interface is obtained as shown in equation (4).
Equation (4)
This polarization reversal can be achieved by controlling the stress of InAlGaN to be a compressive stress rather than a tensile stress, and the stress can be controlled by adjusting the composition ratio of In (Indium) and Al (Aluminum) of the quaternary nitride semiconductor InAlGaN.
Hereinafter, the relationship between the stress change, the polarization induced charges, and the lattice constant according to the composition ratio of the quaternary nitride semiconductor power semiconductor device according to one embodiment of the present invention will be described with reference to FIGS.
6 is a graph showing a correlation between lattice constants and energy band gaps of various nitride semiconductors of AlN, Al x Ga 1-x N, GaN, Ga x In 1-x N, Al x In 1-x N, InN to be.
FIG. 7 is a graph showing the polarization induced charge density according to the composition of InAlGaN when the composition of In and Al is x and y, respectively, on the z axis. In FIG. 7, the red plane represents the plane in which the polarization induced charge density is zero, and the green plane represents the polarization induced charge density according to the composition of In and Al in InAlGaN. On the straight line where the green plane meets the red plane, the polarization induced charge density becomes zero and the polarization induction charge, that is, the position where the 2DEG is formed, is reversed with respect to this straight line. According to this graph, it can be seen that the position where the 2DEG is formed can be controlled by controlling the composition ratio of In and Al.
8 is a graph showing the relation of lattice constant according to the composition of In and Al in InAlGaN. In FIG. 8, the green plane represents the lattice constant of InAlGaN corresponding to the constant value on the z-axis when In and Al of InAlGaN are respectively x and y, and the red plane represents the lattice constant of GaN. The straight line where the green plane meets the red plane is when the lattice constant of InAlGaN matches the lattice constant of GaN.
The simulation graphs of FIGS. 6 to 8 show the results predicted theoretically. In the GaN / InAlGaN / GaN structure, the lattice constant of InAlGaN varies depending on the composition ratio of In and Al. That is, the InAlGaN layer and the GaN Thereby inducing a change in the stress between the layers. As a result, the InAlGaN polarization changes and the polarization direction can be reversed, and the position at which the 2DEG is formed is reversed. That is, the amount and position of the charge induced in the InAlGaN is a function of the composition ratio of In and Al.
Meanwhile, FIG. 9 is a table showing experimental values of peak angle separation, band gap energy, electron mobility, and sheet concentration in four kinds of GaN / InAlGaN / GaN element devices having different compositions of In and Al. Peak angle separation is related to the stress, and it is confirmed that the 2DEG is formed from the electron mobility and the sheet concentration value at the bonding interface.
10 shows the polarization induced charge densities depending on the composition ratio of Al (aluminum) and In (Indium) in In x Al y Ga 1-xy N / GaN, and Fig. 11 shows the relationship between the polarization- 1 to 11 show the strain and the polarization-induced charge. In this table, the polarization reversal occurs when the polarization induced charge density is positive.
12 shows the bandgap diagrams for
Quaternary nitride layer is made of In x Al y Ga 1-xy N (0 <x <0.5, 0 <y <0.5), and the composition x is 0.1 or more 0.5 or less of In, the Al composition y is 0.05 or 0.2 The 2DEG can be formed at the upper interface of the InAlGaN layer. The above numerical values are merely examples of the present invention. By controlling the composition ratio of In and Al, it is possible to obtain other composition ratios which can control the position of 2DEG in InAlGaN to the top surface. By controlling the composition ratio of the quaternary nitride semiconductor in this manner, the position of the 2DEG formation can be controlled through the polarization control.
Figs. 13 (a) and 13 (b) show the structure of a semiconductor device according to the 2DEG formation positions of quaternary InAlGaN nitride power semiconductor devices.
13A is a basic structure of a conventional gallium-sided InAlGaN / GaN-based power semiconductor device, in which 2DEG is formed on the bottom surface of InAlGaN. On the other hand, the gallium-based GaN / InAlGaN / GaN-based power semiconductor device according to an embodiment of the present invention shown in FIG. 13 (b) has 2DEG formed on the top surface of the
In contrast to the conventional gallium-sided InAlGaN / GaN power semiconductor device operating in D-mode (depletion mode), the gallium-based GaN / InAlGaN / GaN based power semiconductor device of the present invention facilitates E-mode (Enhancement mode) And the contact resistance of the source / drain electrode is reduced.
A method of fabricating a power semiconductor device according to an embodiment of the present invention includes: forming a buffer layer on a substrate; A quaternary nitride layer forming step of epitaxially growing a quaternary nitride layer made of four kinds of elements including Ga and N on the GaN buffer layer; And a cap layer formation step of growing a GaN cap layer on the quaternary nitride layer.
In this case, the substrate is preferably a sapphire substrate, a silicon substrate, or a silicon carbide substrate. The nitride layer is grown as a gallium surface, and the quaternary nitride layer includes In, Al, Ga and N. When the quaternary nitride layer is epitaxially grown on the GaN buffer layer, the composition ratio of In and Al, for example, the In composition x may be 0.1 or more and 0.5 or less, and the composition y of Al may be 0.05 or more and 0.2 or less have. At this time, due to the difference in lattice constant between the GaN buffer layer and the quaternary nitride layer, a compressive stress acts on the quaternary nitride layer and epitaxial growth occurs, thereby reversing the polarization.
The direction of polarization of the quaternary nitride layer can be controlled by appropriately selecting the optimum composition ratio so that the formation position of the 2DEG can be controlled to be located on the quaternary nitride . The four-element nitride layer is preferably formed to a thickness of about 1 nm to 30 nm, but is not limited thereto. On the other hand, the gallium nitride cap layer is also preferably formed at a thickness of 1 nm to 30 nm, but is not limited thereto.
Hereinafter, another embodiment of the present invention will be described with reference to FIG. According to another embodiment of the present invention, a multi-layered multi-mode nitride semiconductor device can be realized.
A GaN layer, a first InAlGaN layer (InAlGaN-2), a barrier layer, a second GaN layer, a second InAlGaN layer (InAlGaN-1) and a third GaN layer are epitaxially grown successively on a Ga . At this time, the composition ratio of In and Al can be adjusted so that the polarization directions of the first InAlGaN layer (InAlGaN-2) and the second InAlGaN layer (InAlGaN-1) are different from each other. That is, the composition ratio of In and Al of the first InAlGaN layer (InAlGaN-2) and the second InAlGaN layer (InAlGaN-1) 2DEG can be formed on the lower surface and the upper surface, respectively. In FIG. 14, the 2DEG is formed on the lower interface of the first InAlGaN layer (InAlGaN-2) and the upper interface of the second InAlGaN layer (InAlGaN-1), but it may be formed in the opposite direction. Further, the third and fourth InAlGaN layers may be formed in the same manner.
Thereafter, a
The
Claims (17)
A quaternary nitride layer forming step of epitaxially growing a quaternary nitride layer made of four kinds of elements including Ga and N on the GaN buffer layer; And
A cap layer formation step of growing a GaN cap layer on the quaternary nitride layer; Lt; / RTI >
Wherein the polarization of the quaternary nitride layer is controlled in the step of forming the quaternary nitride layer to adjust the formation position of the two-dimensional electron gas.
Wherein the formation position of the two-dimensional electron gas is a contact interface between the quaternary nitride layer and the GaN cap layer.
Wherein the quaternary nitride layer is composed of four kinds of elements of In, Al, Ga and N, and the polarization of the quaternary nitride layer is determined by a composition ratio of In and Al.
Wherein the quaternary nitride layer is made of In x Al y Ga 1-xy N (0 <x <0.5, 0 <y <0.5).
The composition x of In is 0.1 or more and 0.5 or less, and the composition y of Al is 0.05 or more and 0.2 or less.
And forming a gate electrode, a source electrode, and a drain electrode on the GaN cap layer.
Wherein a compressive stress is applied to the quaternary nitride layer in the step of forming the quaternary nitride layer, the polarization direction of the quaternary nitride layer is directed upward, and the two-dimensional electron gas is in contact with the interface between the quaternary nitride layer and the GaN cap layer And the second electrode is formed on the second electrode.
And forming a bureid channel of the HEMT by forming a two-dimensional electron gas on the upper portion of the quaternary nitride layer.
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| CN108573853B (en) * | 2017-03-09 | 2021-01-29 | 合肥彩虹蓝光科技有限公司 | GaN-based HEMT device epitaxial structure and growth method thereof |
| CN107799590B (en) | 2017-11-21 | 2024-05-24 | 华南理工大学 | GaN-based microwave power device with large gate width and manufacturing method thereof |
| KR102537068B1 (en) | 2020-11-27 | 2023-05-26 | 서울대학교산학협력단 | Manufacturing method of a substrate including gallium oxide layer on a sapphire nano membrane |
| KR102537070B1 (en) | 2020-11-30 | 2023-05-26 | 서울대학교산학협력단 | Manufacturing method of alpha-gallium oxide thin film using of alpha-aluminum gallium oxide buffer layer |
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| US20070018198A1 (en) * | 2005-07-20 | 2007-01-25 | Brandes George R | High electron mobility electronic device structures comprising native substrates and methods for making the same |
| US20130252386A1 (en) | 2005-07-20 | 2013-09-26 | Cree, Inc. | Methods of fabricating nitride-based transistors with an etch stop layer |
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| JP2010056340A (en) * | 2008-08-28 | 2010-03-11 | Sanken Electric Co Ltd | Semiconductor device |
| JP5465469B2 (en) * | 2008-09-04 | 2014-04-09 | 日本碍子株式会社 | Epitaxial substrate, semiconductor device substrate, and HEMT element |
| KR101180068B1 (en) * | 2010-10-19 | 2012-09-05 | 홍익대학교 산학협력단 | AlGaN BASED HETERO-STRUCTURE FIELD EFFECT TRANSISTOR |
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| US20070018198A1 (en) * | 2005-07-20 | 2007-01-25 | Brandes George R | High electron mobility electronic device structures comprising native substrates and methods for making the same |
| JP2009507362A (en) | 2005-07-20 | 2009-02-19 | クリー インコーポレイテッド | High electron mobility electronic device structures including native substrates and methods for manufacturing them |
| US20130252386A1 (en) | 2005-07-20 | 2013-09-26 | Cree, Inc. | Methods of fabricating nitride-based transistors with an etch stop layer |
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