KR101641090B1 - Coating method and coating apparatus - Google Patents
Coating method and coating apparatus Download PDFInfo
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- KR101641090B1 KR101641090B1 KR1020110063519A KR20110063519A KR101641090B1 KR 101641090 B1 KR101641090 B1 KR 101641090B1 KR 1020110063519 A KR1020110063519 A KR 1020110063519A KR 20110063519 A KR20110063519 A KR 20110063519A KR 101641090 B1 KR101641090 B1 KR 101641090B1
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Abstract
There is provided a technique capable of suppressing unevenness of the coating film thickness in the substrate surface even when a thin coating film is formed by reducing the supply amount of the coating liquid (for example, a resist solution). A coating liquid applying step of supplying the coating liquid to the center of the substrate and rotating the substrate to cover the entire surface of the substrate with the coating liquid; and a step of rotating the substrate in a state in which the supply of the coating liquid is stopped after the coating liquid applying step Wherein a temperature in a specific range in the radial direction of the substrate is locally adjusted on the back surface side of the substrate in the drying step. This adjustment can be performed, for example, by injecting a thermo fluid into a specific range in the radial direction of the back surface of the substrate by means of a heating nozzle or by irradiating the heating wire in a specific range in the radial direction of the back surface of the substrate.
Description
TECHNICAL FIELD The present invention relates to a coating method and apparatus for forming a coating film such as a photoresist film on a substrate, and more particularly to a technique for improving the uniformity of film thickness of a coating film.
In a photolithography process in a semiconductor device manufacturing process, a resist coating process for forming a resist film by applying a resist solution onto a semiconductor wafer (hereinafter referred to as a wafer), an exposure process for exposing the resist film to a predetermined pattern, A developing step of developing the resist film, and the like are sequentially performed to form a predetermined resist pattern on the wafer.
In the resist coating step, a so-called spin coating method in which the resist solution is supplied from the nozzle to the central portion of the rotating wafer surface and the resist solution is spread radially outward by centrifugal force to cover the entire surface of the wafer with the resist solution .
BACKGROUND ART [0002] As a circuit of a semiconductor device has become finer in recent years, thinning of a resist film in a resist coating process is progressing. Since the resist solution is expensive, it is necessary to reduce the amount of the resist solution as much as possible.
In the case of forming an extremely thin resist film, higher in-plane film thickness uniformity is required. However, if the supply amount of the resist solution is reduced, it becomes difficult to obtain sufficient in-plane film thickness uniformity. For example, a resist solution of 0.5 ml or less is supplied to a 12-inch wafer to form a resist film having a thickness of about 100 nm. In this case, even if optimization of the application conditions (wafer rotation speed, resist solution supply timing, etc.) is performed, a film thickness difference of about 1 nm occurs in the wafer surface. This difference in the film thickness is not so serious in the conventional thick resist film, but it can not be ignored in the extremely thin resist film which has been required in recent years. If the thickness of the resist film is uneven, unevenness of the optical path length of exposure during exposure processing is generated, and it becomes difficult to perform uniform exposure processing in the surface.
The present invention provides a technique capable of forming a coating film having high in-plane film thickness uniformity by making it possible to adjust the distribution of the coating film thickness in the substrate surface even when a thin coating film is formed by reducing the supply amount of the coating liquid.
According to a first aspect of the present invention, there is provided a coating method comprising: a coating liquid applying step of supplying a coating liquid to a central portion of a substrate and rotating the substrate to cover the entire surface of the substrate with a coating liquid; And a drying step of drying the coating liquid by rotating the substrate in a state in which supply of the substrate is stopped, wherein in the drying step, a temperature of a specific range in the radial direction of the substrate is locally adjusted A film forming method is provided.
Preferably, the local adjustment of the temperature is started immediately after the entire surface of the substrate is covered with the coating liquid.
In a preferred embodiment, the coating film forming method further includes a planarizing step of flattening the coating liquid applied to the surface of the substrate by rotating the substrate at a rotational speed lower than the rotational speed of the substrate in the coating liquid applying step Wherein the step of applying the coating liquid, the step of planarizing, and the step of drying are performed in this order, wherein the step of performing the drying step from the planarizing step is performed by raising the rotation speed of the substrate, Control is initiated at or after the start of the drying process.
The local adjustment of the temperature can be performed by injecting a temperature-adjusting fluid locally in a specific range in the radial direction of the back surface of the substrate. Preferably, the heating fluid is a gas such as air or an inert gas. When a gas is used as the temperature-regulating fluid, the temperature of the gas may be within a range of, for example, 30 ° C to 40 ° C. The injection of the warming fluid can be performed by using a tempered fluid nozzle having a discharge opening which is opened in the vicinity of the back surface of the substrate and locally injecting the tempered fluid in a specific range in the radial direction of the back surface of the substrate.
The local adjustment of the temperature can also be performed by locally irradiating the hot wire to a specific range in the radial direction of the back surface of the substrate. Examples of the heat ray include, for example, infrared LED light and laser light.
According to a second aspect of the present invention, there is provided a spin chuck comprising: a spin chuck for holding and rotating a substrate; a coating liquid nozzle for supplying a coating liquid to a surface of the substrate held by the spin chuck; An exhaust mechanism for sucking the inside of the cup to form an air flow in the cup, and an exhaust mechanism for locally controlling the temperature in a specific range in the radial direction of the substrate on the backside of the substrate held by the spin chuck There is provided a coating device comprising a temperature adjusting means.
According to a third aspect of the present invention, there is provided a spin chuck, comprising: a spin chuck for holding and rotating a substrate; a coating liquid nozzle for supplying a coating liquid to the substrate held by the spin chuck; A coating liquid supply mechanism for supplying the coating liquid with the coating liquid nozzle, and a controller for controlling the spin chuck, the coating liquid supply mechanism, and the temperature control A computer-readable recording medium storing a program for controlling operations of said spin chuck, said applying liquid supply mechanism, and said temperature adjusting means in a coating apparatus including a control unit including a computer for controlling the operation of said means, By the computer, the computer controls the spin chuck, the coating liquid supply mechanism, and the temperature control means A coating liquid applying step of supplying the coating liquid from the coating liquid nozzle to the center of the substrate and rotating the substrate with the spin chuck to cover the entire surface of the substrate with the coating liquid; And a drying step of drying the coating liquid by rotating the substrate with the spin chuck in a state in which the supply of the coating liquid is stopped from the coating liquid nozzle, There is provided a recording medium for performing temperature control.
According to the present invention, the thickness distribution of the coating film can be adjusted by locally controlling the temperature in a specific range in the radial direction of the substrate on the back side of the substrate in the drying step of drying the coating liquid. Thus, the uniformity in the thickness of the coating film can be improved.
1 is a plan view schematically showing the configuration of a coating and developing processing system.
2 is a front view of the coating and developing processing system.
3 is a rear view of the coating and developing processing system.
4 is a schematic longitudinal sectional view showing the configuration of the resist coating apparatus.
5 is a schematic cross-sectional view showing the configuration of the resist coating apparatus.
6 is a flowchart showing the main steps of the resist coating process.
7 is a graph showing the rotation speed of the wafer in each step of the resist coating process together with the supply timing of the prewetting liquid and the resist liquid, and the timing of injection of the heating gas.
8 is a graph showing the experimental results.
9 is a schematic view showing a modified example of the heating nozzle.
10 is a schematic view showing a first example using a heat ray irradiating device as a temperature adjusting means.
11 is a schematic view showing a second example using a heat ray irradiating device as a temperature adjusting means.
Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.
First, the overall configuration of a coating and developing system including a coating apparatus for coating a resist on a substrate will be described with reference to Figs. 1 to 3. Fig.
1, the coating and developing
A cassette table 10 is provided in the
The
As shown in Fig. 2, the first processing apparatus group G1 is provided with a liquid processing apparatus for supplying a predetermined liquid to the wafer W to perform processing, for example, a
For example, as shown in Fig. 3, the third processing unit group G3 is provided with a temperature control device 60 (see Fig. 3) for controlling the temperature of the wafer W by placing the wafer W on a warm- ), A
The fourth processing apparatus group G4 is provided with a
The fifth processing apparatus group G5 is provided with a plurality of heat treatment apparatuses such as
As shown in Fig. 1, a plurality of processing devices are disposed on the positive direction side of the
The
The
Next, the configuration of the resist
4, the resist
The
A
An
A fan filter unit (FFU) 126, which forms a downflow (DF) of a clean air, for example, clean air, is installed in the
When the
A space BS surrounding the back surface of the wafer W is formed by the inner
Needless to say, since the
The shape of the cup is not limited to that described above. For example, a cup described in Japanese Patent Application Laid-Open No. 2004-207573 filed by the present applicant may be used. (Mist, etc.), contaminant particles, and the like into the space BS from the narrowed gap between the upper surface of the inner cup body and the back surface of the wafer W described in Japanese Patent Laid-Open No. 2004-207573 . Such a configuration is not essential for the installation of a later-described temperature-controlled nozzle, but is preferable in that the temperature-controlled nozzle can be designed to be suitable only for the purpose of temperature control.
5, a
A resist
As shown in Fig. 4, a supply pipe 147 communicating with a resist solution supply source (PR) 146 is connected to the resist
The
As shown in Fig. 4, the
Further, the relationship between each nozzle and each arm is not limited to that shown in the figure. For example, it is also possible to support the resist
The
The clean
The on-off
In an exemplary embodiment, the clean
The rotation operation of the
Next, a coating process performed in the resist
First, untreated wafers W are taken out one by one from the cassette C on the cassette table 10 by the
6, which is a flowchart showing the main steps of the coating process in the resist
First, the
Next, the
The
Thereafter, the
Also, the resist solution may be discharged by the resist
7, the rotation of the wafer W is decelerated at a low speed, for example, at a third speed V3 of about 300 rpm, for example, And the resist solution on the wafer W is leveled and flattened (planarization step S4 in Fig. 6). The planarization step S4 is performed for about 1 sec, for example.
7, the rotation of the wafer W is accelerated to a medium speed, for example, a fourth speed V4 of about 1500 rpm, The resist solution on the wafer W is dried (drying step S5 in Fig. 6). The drying step (S5) is performed for about 20 seconds, for example. Thus, a thin resist film (photoresist film) is formed on the surface of the wafer W. Air at a predetermined temperature, for example, 30 DEG C to 40 DEG C, is jetted from the
After the drying of the wafer W is completed, the rotation of the wafer W is stopped, and the wafer W is carried out from the
After the resist coating process, the wafer W is conveyed by the
Regarding the resist saving technique due to the fluctuation of the wafer rotational speed at the time of applying the resist in the above-described series of steps (S1 to S5), the present patent application and the inventor have a common patent application in common with the assignee (applicant) And is described in detail in Japanese Patent Application Laid-Open No. 2009-279476, which is a Japanese Patent Application No. 2008-131495.
[Experimental Example]
Next, advantages of the above embodiment will be described with reference to experimental results.
The film formation of the resist film was performed on the wafer W by using the resist coating apparatus shown in Figs. In the drying step (S5), a sample in which the heating gas was discharged from the heating nozzle (160) was an experimental example, and a sample in which the heating gas was not discharged was taken as a comparative example.
The film thickness distribution of the resist film was measured after film formation of the resist film. The results are shown in the graph of Fig. The vertical axis of the graph is the resist film thickness, and the horizontal axis is the distance from the center of the wafer. A black square ()) is a comparative example, and a white square ()) is an experimental example. The arrow in the graph indicates the injection position of the heating gas (specifically, the center position of the heating nozzle). It is obvious that the width of the film thickness distribution decreases from the graph to the experimental example. In addition, the 3? Value of the film thickness, which is an index of the statistical unevenness, is 0.55 nm in the experimental example while it is 1.00 nm in the comparative example. That is, a large improvement in the film thickness distribution width was recognized.
The inventor considers the following differences with respect to the comparative example and the experimental example.
In the comparative example, the film thickness is large at the central portion and the peripheral portion of the wafer and smaller at the portion between the central portion and the peripheral portion (hereinafter referred to as the "middle portion"). The reason is considered as follows. In the case of the spin coating method, since the centrifugal force acting on the resist liquid in the central portion of the wafer is small, it is considered that the film thickness becomes thick. The centrifugal force acting on the resist liquid is large at the periphery of the wafer. On the other hand, on the other hand, it is considered that the solvent contained in the resist solution volatilizes in the process of diffusing the resist solution from the central portion to the peripheral portion, and the resist solution becomes highly concentrated at the time of reaching the periphery. It is presumed that one of the causes of thickening of the film thickness in the periphery is considered to be that the influence of the high concentration of the resist solution is larger than the influence of the centrifugal force. Further, it is considered that one cause is that the resist which has been rotating at a high speed in the end of the resist solution applying step (S3) is rapidly decelerated with the start of the planarizing step (S4), and the resist which has been scattered from the periphery of the wafer flows backward radially inward . In addition, it is considered that the cause is also the heat transfer flow at the contact portion between the wafer and the spin chuck, and the distribution of vaporization heat of the solvent in each portion of the wafer. It is considered that the film thickness distribution occurs by entangling various factors as described above.
In the experimental example, in the drying step (S5), the heating gas is injected in the vicinity of a relatively thin film thickness in the comparative example. As a result, the film thickness of the portion where the heating gas is injected and the vicinity thereof (referred to as "temperature control region" for convenience) increases. The reason is as follows. In the drying step (S5), part of the resist solution present on the wafer at the end of the planarizing step (S4) is shaken to the outside of the wafer by the centrifugal force. That is, even in the drying step (S5), the resist liquid moves radially outward due to the centrifugal force. At this time, the temperature of the wafer in the temperature control region rises when the heating gas is injected into the temperature control region. As a result, the volatilization of the solvent contained in the resist solution in the temperature control region is promoted, Is higher than the concentration of the resist solution in the region other than the resist solution. Since the resist solution having a high concentration has a high viscosity, even if the wafer rotates at a relatively high rotation (drying step (S5), for example, 1500 rpm), it is difficult for the resist solution to move radially outwardly. Increase. On the other hand, at the periphery of the wafer, the resist solution is removed in a state in which the movement of the resist solution moved from the radial direction is reduced. As a result, it is considered that the film thickness at the middle part of the wafer is increased and the film thickness at the peripheral part of the wafer is decreased. As a result, in the drying step (S5), local heating is performed by the heating medium, which means that the film thickness in the vicinity of the portion where the heating medium is injected tends to increase.
In addition, the injection of the heating gas intentionally causes a temperature change in the wafer surface to locally adjust the degree of volatilization of the solvent in the resist, thereby finely adjusting the film thickness distribution. Therefore, when the heating of the heating medium is initiated excessively early, there is a possibility that the film thickness may be unevenly distributed. Therefore, it is preferable that the temperature of the heated gas is at least the first time after the resist liquid has diffused over the entire surface of the wafer. Further, in the case where the planarization step (S4) is carried out to further uniform the thickness of the resist liquid film by rotating the wafer at a low speed between the resist solution coating step (S3) and the drying step (S5) It is preferable to start the injection of the heating gas after or at the same time as the start of the drying step (S5) after the lapse of a predetermined time.
The above embodiment can be variously modified.
For example, in the above embodiment, two of the temperature-control nozzles are provided, but the present invention is not limited to this, and only one or three or more temperature-tone nozzles may be provided. The shape of the outlet of the heating nozzle is not limited to a rectangle but may be other shapes such as a circle, an ellipse, a long circle, and a rhombus.
As shown schematically in Fig. 9 (a), the
As also schematically shown in 9 (b), the temperature control of the nozzle (160 -1 ~ 160 -n) of the plurality of small diameter and provided on a radially different position, the supply of the temperature control of the gas nozzle to each of temperature control It may be provided with a valve (164 -1 ~ 164 -n) for controlling. In this case, Selecting the valve (164 -1 to 164 -n) for opening (for example, in the case of applying a first resist, and the
The radial position of the heating nozzle may be changed by operating the heating nozzle. For example, as shown in Fig. 9 (c), a
As shown in Figs. 9A to 9C, when the temperature control region can be changed, it is convenient when the
In the above-described embodiment, the gas is jetted from the temperature-controlled nozzle onto the wafer W, but it may be a gas, a liquid, a gas-liquid mixture or the like jetted onto the wafer W. In the above embodiment, the wafer W is locally heated, but may be cooled.
In the above embodiment, the temperature of the wafer W is locally controlled by the injection of the warm gas. However, the present invention is not limited to this, and the local temperature control of the wafer W may be performed by irradiating the wafer W with heat. It is also possible to do. 10 schematically shows an example in which a hot wire irradiation device is provided on the back side of the wafer instead of providing the heating nozzle. In the example shown in Fig. 10, an
Instead of the
10 and 11, the temperature distribution of the wafer W is adjusted by irradiating the wafer with hot wire in the drying step, similarly to the embodiment using the above-described temperature-controlled nozzle, The thickness distribution can be adjusted. Even in the case of using the hot wire irradiation device, the temperature control region can be configured to be changeable as in the case of using the temperature-controlled nozzle. For example, as in the case of the heating nozzles shown in Figs. 9A and 9B, the light-emitting side ends of the plurality of
Further, in the case of using the hot wire irradiation device, the wafer W can be heated substantially without being influenced by the airflow on the back side space (BS) of the wafer, and precision output control can be performed by pulse control or the like. ) Can be precisely adjusted. On the other hand, there is a possibility that the irradiated portion may be contaminated depending on the atmosphere in the wafer back side space (BS). Therefore, it is also conceivable that the irradiated portion should be periodically cleaned. In this respect, it is advantageous to use an embodiment using a temperature-controlled nozzle which is unlikely to occur.
In the above embodiments, the coating liquid is a resist solution, but the present invention is not limited thereto. The techniques according to the above embodiments may be applied to a coating solution other than a resist solution such as an antireflection film, a spin on glass (SOG) Spin On Dielectric) film can be applied. The object to be coated is not limited to the wafer W but may be another substrate such as a FPD (flat panel display) or a mask reticle for a photomask other than the wafer.
The above embodiments are useful in various application processes in the manufacture of semiconductor devices.
Claims (13)
A planarization step of planarizing the coating liquid applied to the surface of the substrate by rotating the substrate at a rotation speed lower than the rotation speed of the substrate in the coating liquid application step after the coating liquid application step,
And a drying step of drying the coating liquid by rotating the substrate at a rotation speed higher than the rotation speed of the substrate in the planarization step in a state in which the supply of the coating liquid is stopped after the planarization step,
Characterized in that in the drying step the temperature in the specific range of the radial direction of the substrate at the backside of the substrate is controlled locally and local control of the temperature is initiated at or after the start of the drying process A method for forming a coating film.
Wherein the local adjustment of the temperature is performed by injecting a temperature-adjusting fluid locally in a specific range in the radial direction of the back surface of the substrate.
Wherein the temperature-controlled fluid is a gas.
Wherein the temperature of the substrate is in the range of 30 占 폚 to 40 占 폚.
Wherein the local adjustment of the temperature is performed by locally irradiating a hot line to a specific range in the radial direction of the back surface of the substrate.
Wherein the coating film forming method is carried out by a coating apparatus having a spin chuck for holding and rotating the substrate and a cup provided so as to surround the substrate held by the spin chuck, A space surrounded by the substrate held by the spin chuck and a part of the cup is formed and a gap is formed between the periphery of the back surface of the substrate held by the spin chuck and a portion of the cup opposite to the periphery thereof Wherein during the execution of the coating film forming method, a flow of air that interferes with the inflow of fluid or fine particles from the outside of the space into the space through the gap is formed in the cup.
A coating liquid nozzle for supplying the coating liquid to the surface of the substrate held by the spin chuck,
A cup provided so as to surround the substrate held by the spin chuck,
An exhaust mechanism for sucking the inside of the cup to form an airflow in the cup,
Temperature adjusting means provided so as to locally adjust a temperature in a specific range in the radial direction of the substrate on the back surface side of the substrate held by the spin chuck,
A coating liquid supply mechanism for supplying the coating liquid to the coating liquid nozzle,
And a controller for controlling operations of the spin chuck, the coating liquid supply mechanism, and the temperature adjusting means,
Wherein,
A coating liquid applying step of supplying the coating liquid from the coating liquid nozzle to the center of the substrate and rotating the substrate with the spin chuck to cover the entire surface of the substrate with the coating liquid;
A planarizing step of rotating the substrate at a rotation speed lower than the rotation speed of the substrate in the coating liquid applying step by the spin chuck after the coating liquid applying step and planarizing the coating liquid applied to the surface of the substrate ,
The substrate is rotated by the spin chuck at a rotational speed higher than the rotational speed of the substrate in the planarizing step in a state in which the supply of the coating liquid is stopped from the coating liquid nozzle after the planarizing step, And a drying step for drying is carried out,
Wherein the control unit executes control so that the local temperature control by the temperature control unit is performed in the drying step and the local temperature control is started when the drying process starts or after the drying process.
Wherein the temperature adjusting means includes a tempering fluid nozzle having an ejection opening that is opened near the back surface of the substrate held by the spin chuck and locally ejecting a tempering fluid in a specific range in the radial direction of the back surface of the substrate .
Wherein the temperature adjusting means includes a hot ray irradiating device for locally irradiating a hot ray to a specific range in the radial direction of the back surface of the substrate held by the spin chuck.
Wherein the computer controls the spin chuck, the coating liquid supply mechanism, and the temperature adjusting means by executing the program by the computer,
A coating liquid applying step of supplying the coating liquid from the coating liquid nozzle to the center of the substrate and rotating the substrate with the spin chuck to cover the entire surface of the substrate with the coating liquid;
A planarizing step of rotating the substrate at a rotation speed lower than the rotation speed of the substrate in the coating liquid applying step by the spin chuck after the coating liquid applying step and planarizing the coating liquid applied to the surface of the substrate ,
The substrate is rotated by the spin chuck at a rotational speed higher than the rotational speed of the substrate in the planarizing step in a state in which the supply of the coating liquid is stopped from the coating liquid nozzle after the planarizing step, And a drying step for drying is carried out,
Wherein the control is performed such that the local temperature control by the temperature control means is performed in the drying step and the local temperature control is started when the drying process is started or thereafter.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| JP2010148016A JP5242635B2 (en) | 2010-06-29 | 2010-06-29 | Coating method and coating apparatus |
| JPJP-P-2010-148016 | 2010-06-29 |
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| KR101641090B1 true KR101641090B1 (en) | 2016-07-20 |
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| KR101654621B1 (en) * | 2014-08-29 | 2016-09-23 | 세메스 주식회사 | Apparatus and Method for treating substrate |
| JP6303968B2 (en) * | 2014-10-10 | 2018-04-04 | 東京エレクトロン株式会社 | Developing device, developing method, and storage medium |
| KR102330278B1 (en) * | 2015-05-18 | 2021-11-25 | 세메스 주식회사 | Method and Apparatus for treating substrate |
| KR102315661B1 (en) * | 2015-05-18 | 2021-10-22 | 세메스 주식회사 | method and Apparatus for treating substrate |
| CN106352679B (en) * | 2016-08-31 | 2018-07-24 | 章彬彬 | One, which cultivates peanut, is coated overturning drying device |
| KR102046872B1 (en) | 2017-10-17 | 2019-11-20 | 세메스 주식회사 | Apparatus and Method for treating substrate |
| KR102295573B1 (en) | 2017-10-17 | 2021-08-31 | 세메스 주식회사 | Apparatus and Method for treating substrate |
| JP2019096734A (en) * | 2017-11-22 | 2019-06-20 | トヨタ自動車株式会社 | Photoresist application device |
| EP3594748B1 (en) * | 2018-07-09 | 2021-04-14 | C&D Semiconductor Services. Inc | Optimal exposure of a bottom surface of a substrate material and/or edges thereof for cleaning in a spin coating device |
| KR102588171B1 (en) * | 2020-09-04 | 2023-10-12 | 가부시키가이샤 스크린 홀딩스 | Rotation holding device and substrate processing apparatus including same |
| CN112185861B (en) * | 2020-09-30 | 2022-09-16 | 信阳星原智能科技有限公司 | Film coating device and method for semiconductor wafer |
| CN117716481A (en) * | 2022-08-08 | 2024-03-15 | 株式会社荏原制作所 | Prewetting module |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2004165437A (en) * | 2002-11-13 | 2004-06-10 | Sharp Corp | Solution coating method and apparatus thereof |
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| JPH0462831A (en) * | 1990-06-25 | 1992-02-27 | Toshiba Corp | Application of photoresist |
| JPH05259061A (en) * | 1992-03-10 | 1993-10-08 | Kawasaki Steel Corp | Semiconductor substrate spin coating method and device |
| JPH0778743A (en) | 1993-09-07 | 1995-03-20 | Hiroshima Nippon Denki Kk | Semiconductor manufacturing equipment |
| JPH08186072A (en) * | 1994-12-28 | 1996-07-16 | Sony Corp | Method and device for substrate spin coating |
| JPH10261579A (en) * | 1997-03-21 | 1998-09-29 | Matsushita Electron Corp | Resist application device and method |
| JP4318913B2 (en) * | 2002-12-26 | 2009-08-26 | 東京エレクトロン株式会社 | Application processing equipment |
| JP5091764B2 (en) * | 2008-05-20 | 2012-12-05 | 東京エレクトロン株式会社 | Coating processing method, program, computer storage medium, and coating processing apparatus |
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| JP2004165437A (en) * | 2002-11-13 | 2004-06-10 | Sharp Corp | Solution coating method and apparatus thereof |
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| JP2012011279A (en) | 2012-01-19 |
| KR20120001681A (en) | 2012-01-04 |
| JP5242635B2 (en) | 2013-07-24 |
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