KR101619929B1 - 저기저항 센서 차폐 - Google Patents

저기저항 센서 차폐 Download PDF

Info

Publication number
KR101619929B1
KR101619929B1 KR1020140091841A KR20140091841A KR101619929B1 KR 101619929 B1 KR101619929 B1 KR 101619929B1 KR 1020140091841 A KR1020140091841 A KR 1020140091841A KR 20140091841 A KR20140091841 A KR 20140091841A KR 101619929 B1 KR101619929 B1 KR 101619929B1
Authority
KR
South Korea
Prior art keywords
ferromagnetic material
layer
material layer
sensor
saf
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020140091841A
Other languages
English (en)
Korean (ko)
Other versions
KR20150014855A (ko
Inventor
케빈 맥네일
아이덴 고긴
마르쿠스 오름스톤
빅터 보리스 사포즈니코브
Original Assignee
시게이트 테크놀로지 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 시게이트 테크놀로지 엘엘씨 filed Critical 시게이트 테크놀로지 엘엘씨
Publication of KR20150014855A publication Critical patent/KR20150014855A/ko
Application granted granted Critical
Publication of KR101619929B1 publication Critical patent/KR101619929B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/10—Structure or manufacture of housings or shields for heads
    • G11B5/11—Shielding of head against electric or magnetic fields
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/398—Specially shaped layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1193—Magnetic recording head with interlaminar component [e.g., adhesion layer, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
KR1020140091841A 2013-07-30 2014-07-21 저기저항 센서 차폐 Expired - Fee Related KR101619929B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/953,936 2013-07-30
US13/953,936 US8988832B2 (en) 2013-07-30 2013-07-30 Magnetoresistive sensor shield

Publications (2)

Publication Number Publication Date
KR20150014855A KR20150014855A (ko) 2015-02-09
KR101619929B1 true KR101619929B1 (ko) 2016-05-11

Family

ID=52427443

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140091841A Expired - Fee Related KR101619929B1 (ko) 2013-07-30 2014-07-21 저기저항 센서 차폐

Country Status (4)

Country Link
US (1) US8988832B2 (enExample)
JP (1) JP6069265B2 (enExample)
KR (1) KR101619929B1 (enExample)
CN (1) CN104347083B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140254047A1 (en) * 2013-03-08 2014-09-11 Seagate Technology Llc Reader with decoupled magnetic seed layer
US9269381B1 (en) 2014-09-15 2016-02-23 Seagate Technology Llc Sensor structure having layer with high magnetic moment
US9269383B1 (en) * 2015-01-23 2016-02-23 HGST Netherlands B.V. Multi-sensor (MIMO) head having a back side antiferromagnetic middle shield
US20160365104A1 (en) * 2015-06-15 2016-12-15 Seagate Technology Llc Magnetoresistive sensor fabrication
US9704515B2 (en) 2015-09-29 2017-07-11 Seagate Technology Llc Lateral spin valve reader with in-plane detector
US9673385B1 (en) 2016-03-24 2017-06-06 Headway Technologies, Inc. Seed layer for growth of <111> magnetic materials
US9934798B1 (en) 2016-09-28 2018-04-03 Seagate Technology Llc Lateral spin valve reader with vertically-integrated two-dimensional semiconducting channel
US10614838B2 (en) * 2018-08-23 2020-04-07 Seagate Technology Llc Reader with side shields decoupled from a top shield
US11074930B1 (en) * 2020-05-11 2021-07-27 International Business Machines Corporation Read transducer structure having an embedded wear layer between thin and thick shield portions
US11676627B2 (en) * 2021-08-06 2023-06-13 Western Digital Technologies, Inc. Magnetic recording head with stable magnetization of shields

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009134850A (ja) 2007-11-28 2009-06-18 Tdk Corp Ｃｐｐ型磁気抵抗効果素子および磁気ディスク装置
US20110007427A1 (en) 2009-07-07 2011-01-13 Seagate Technology Llc Magnetoresistive sensor with synthetic antiferromagnetic cap or seed layers
JP2012133864A (ja) 2010-12-13 2012-07-12 Headway Technologies Inc 高分解能の磁気読取ヘッド

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6437949B1 (en) * 2000-02-08 2002-08-20 Seagate Technology Llc Single domain state laminated thin film structure
US7180712B1 (en) * 2000-02-28 2007-02-20 Headway Technologies, Inc. Shield structure design to improve the stability of an MR head
US6456467B1 (en) * 2000-03-31 2002-09-24 Seagate Technology Llc Laminated shields with antiparallel magnetizations
JP4065787B2 (ja) * 2002-08-30 2008-03-26 株式会社日立グローバルストレージテクノロジーズ 磁気ヘッドおよび磁気記録再生装置
US7236333B2 (en) * 2003-12-11 2007-06-26 Seagate Technology Llc Domain wall free shields of MR sensors
US8014108B2 (en) * 2008-02-08 2011-09-06 Tdk Corporation Magnetoresistive device of the CPP type, utilizing insulating layers interposed in shield layers to form a closed magnetic path usable in a disk system
US8514524B2 (en) * 2008-05-09 2013-08-20 Headway Technologies, Inc. Stabilized shields for magnetic recording heads
US8902548B2 (en) * 2010-04-30 2014-12-02 Seagate Technology Llc Head with high readback resolution
US8437106B2 (en) * 2010-10-08 2013-05-07 Tdk Corporation Thin film magnetic head including spin-valve film with free layer magnetically connected with shield
US8462467B2 (en) * 2010-10-08 2013-06-11 Tdk Corporation Thin film magnetic head including soft layer magnetically connected with shield
US8472147B2 (en) * 2011-05-06 2013-06-25 Seagate Technology Llc Magnetoresistive shield with lateral sub-magnets
US8570683B2 (en) 2011-06-24 2013-10-29 HGST Netherlands B.V. Low permeability material for a side shield in a perpendicular magnetic head
US8630068B1 (en) * 2011-11-15 2014-01-14 Western Digital (Fremont), Llc Method and system for providing a side shielded read transducer
US8630069B1 (en) * 2012-10-04 2014-01-14 HGST Netherlands B.V. Magnetic shield having improved resistance to the hard bias magnetic field
US8760820B1 (en) * 2012-11-30 2014-06-24 Seagate Technology Llc Magnetic element with coupled side shield
US8531801B1 (en) * 2012-12-20 2013-09-10 Western Digital (Fremont), Llc Method and system for providing a read transducer having a composite magnetic shield with smooth interfaces
US8638530B1 (en) * 2013-02-20 2014-01-28 HGST Netherlands B.V. Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor having a top shield with an antiparallel structure
US20140254047A1 (en) * 2013-03-08 2014-09-11 Seagate Technology Llc Reader with decoupled magnetic seed layer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009134850A (ja) 2007-11-28 2009-06-18 Tdk Corp Ｃｐｐ型磁気抵抗効果素子および磁気ディスク装置
US20110007427A1 (en) 2009-07-07 2011-01-13 Seagate Technology Llc Magnetoresistive sensor with synthetic antiferromagnetic cap or seed layers
JP2012133864A (ja) 2010-12-13 2012-07-12 Headway Technologies Inc 高分解能の磁気読取ヘッド

Also Published As

Publication number Publication date
US8988832B2 (en) 2015-03-24
KR20150014855A (ko) 2015-02-09
JP6069265B2 (ja) 2017-02-01
JP2015028832A (ja) 2015-02-12
US20150036246A1 (en) 2015-02-05
CN104347083A (zh) 2015-02-11
CN104347083B (zh) 2019-02-19

Similar Documents

Publication Publication Date Title
KR101619929B1 (ko) 저기저항 센서 차폐
CN114730569B (zh) 含不同堆叠传感器的二维磁记录读取头结构及磁盘驱动器
US9019664B2 (en) Magnetoresistive sensor with variable shield permeability
US6327122B1 (en) Spin valve sensor having antiparallel (AP) pinned layer with high resistance and low coercivity
US6185077B1 (en) Spin valve sensor with antiferromagnetic and magnetostatically coupled pinning structure
US6636389B2 (en) GMR magnetic transducer with nano-oxide exchange coupled free layers
JP4942445B2 (ja) 磁気抵抗効果素子、薄膜磁気ヘッド、ヘッドジンバルアセンブリ、ヘッドアームアセンブリおよび磁気ディスク装置
US20070146939A1 (en) Narrow gap current perpendicular to plane (CPP) magnetoresistive sensor
JPH11316918A (ja) 磁気抵抗センサ、磁気ディスクシステム、及び読出し／書込みヘッドアセンブリ
US7872837B2 (en) Method and apparatus for providing a magnetic read sensor having a thin pinning layer and improved magnetoreistive coefficient
US7898775B2 (en) Magnetoresistive device having bias magnetic field applying layer that includes two magnetic layers antiferromagnetically coupled to each other through intermediate layer
JP4492604B2 (ja) 磁気抵抗効果素子、薄膜磁気ヘッド、ヘッドジンバルアセンブリおよびハードディスク装置
US7268986B2 (en) Double tunnel junction using self-pinned center ferromagnet
JP2004319060A (ja) 薄膜磁気ヘッドおよびその製造方法
KR100770813B1 (ko) 자기 저항 헤드, 자기 기록 재생 장치 및 자기 저항 헤드 제조 방법
US20080218912A1 (en) CPP-type magnetoresistive element having spacer layer that includes semiconductor layer
US7352541B2 (en) CPP GMR using Fe based synthetic free layer
US7436636B2 (en) Dual CPP GMR sensor with in-stack bias structure
US8724264B2 (en) Thin film magnetic head, magnetic head slider, head gimbal assembly, head arm assembly, magnetic disk device and method of manufacturing thin film magnetic head
JP3618601B2 (ja) 磁気抵抗効果型ヘッド及び磁気再生装置
JP2006323900A (ja) 薄膜磁気ヘッドおよびその製造方法、ヘッドジンバルアセンブリ、ヘッドアームアセンブリならびに磁気ディスク装置
JP2005191577A (ja) 磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気抵抗変換システム及び磁気記録システム
JP2005159369A (ja) 磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気抵抗変換システム及び磁気記録システム
JP2005167267A (ja) 磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気抵抗変換システム及び磁気記録システム
JP2005184014A (ja) 磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気抵抗変換システム及び磁気記録システム

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20190422

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20210504

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20210504

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000