CN104347083B - 磁阻传感器屏蔽 - Google Patents
磁阻传感器屏蔽 Download PDFInfo
- Publication number
- CN104347083B CN104347083B CN201410356739.6A CN201410356739A CN104347083B CN 104347083 B CN104347083 B CN 104347083B CN 201410356739 A CN201410356739 A CN 201410356739A CN 104347083 B CN104347083 B CN 104347083B
- Authority
- CN
- China
- Prior art keywords
- layer
- sensor
- storehouse
- saf
- sensor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000003302 ferromagnetic material Substances 0.000 claims abstract description 25
- 230000005290 antiferromagnetic effect Effects 0.000 claims abstract description 11
- 230000008878 coupling Effects 0.000 claims description 40
- 238000010168 coupling process Methods 0.000 claims description 40
- 238000005859 coupling reaction Methods 0.000 claims description 40
- 230000004888 barrier function Effects 0.000 claims description 19
- 238000010276 construction Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 claims 42
- 239000011229 interlayer Substances 0.000 claims 1
- 230000005291 magnetic effect Effects 0.000 description 88
- 230000005294 ferromagnetic effect Effects 0.000 description 39
- 230000035699 permeability Effects 0.000 description 30
- 229920002120 photoresistant polymer Polymers 0.000 description 21
- 230000008021 deposition Effects 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 239000000696 magnetic material Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 238000000465 moulding Methods 0.000 description 11
- 230000005303 antiferromagnetism Effects 0.000 description 8
- 230000002708 enhancing effect Effects 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 7
- 230000006870 function Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000002463 transducing effect Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000863 Ferronickel Inorganic materials 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- RIVZIMVWRDTIOQ-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co].[Co] RIVZIMVWRDTIOQ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 description 1
- DEPMYWCZAIMWCR-UHFFFAOYSA-N nickel ruthenium Chemical compound [Ni].[Ru] DEPMYWCZAIMWCR-UHFFFAOYSA-N 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/10—Structure or manufacture of housings or shields for heads
- G11B5/11—Shielding of head against electric or magnetic fields
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/398—Specially shaped layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/1193—Magnetic recording head with interlaminar component [e.g., adhesion layer, etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/953,936 | 2013-07-30 | ||
| US13/953,936 US8988832B2 (en) | 2013-07-30 | 2013-07-30 | Magnetoresistive sensor shield |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104347083A CN104347083A (zh) | 2015-02-11 |
| CN104347083B true CN104347083B (zh) | 2019-02-19 |
Family
ID=52427443
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410356739.6A Active CN104347083B (zh) | 2013-07-30 | 2014-07-24 | 磁阻传感器屏蔽 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8988832B2 (enExample) |
| JP (1) | JP6069265B2 (enExample) |
| KR (1) | KR101619929B1 (enExample) |
| CN (1) | CN104347083B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140254047A1 (en) * | 2013-03-08 | 2014-09-11 | Seagate Technology Llc | Reader with decoupled magnetic seed layer |
| US9269381B1 (en) | 2014-09-15 | 2016-02-23 | Seagate Technology Llc | Sensor structure having layer with high magnetic moment |
| US9269383B1 (en) * | 2015-01-23 | 2016-02-23 | HGST Netherlands B.V. | Multi-sensor (MIMO) head having a back side antiferromagnetic middle shield |
| US20160365104A1 (en) * | 2015-06-15 | 2016-12-15 | Seagate Technology Llc | Magnetoresistive sensor fabrication |
| US9704515B2 (en) | 2015-09-29 | 2017-07-11 | Seagate Technology Llc | Lateral spin valve reader with in-plane detector |
| US9673385B1 (en) | 2016-03-24 | 2017-06-06 | Headway Technologies, Inc. | Seed layer for growth of <111> magnetic materials |
| US9934798B1 (en) | 2016-09-28 | 2018-04-03 | Seagate Technology Llc | Lateral spin valve reader with vertically-integrated two-dimensional semiconducting channel |
| US10614838B2 (en) * | 2018-08-23 | 2020-04-07 | Seagate Technology Llc | Reader with side shields decoupled from a top shield |
| US11074930B1 (en) * | 2020-05-11 | 2021-07-27 | International Business Machines Corporation | Read transducer structure having an embedded wear layer between thin and thick shield portions |
| US11676627B2 (en) * | 2021-08-06 | 2023-06-13 | Western Digital Technologies, Inc. | Magnetic recording head with stable magnetization of shields |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6437949B1 (en) * | 2000-02-08 | 2002-08-20 | Seagate Technology Llc | Single domain state laminated thin film structure |
| US7180712B1 (en) * | 2000-02-28 | 2007-02-20 | Headway Technologies, Inc. | Shield structure design to improve the stability of an MR head |
| US6456467B1 (en) * | 2000-03-31 | 2002-09-24 | Seagate Technology Llc | Laminated shields with antiparallel magnetizations |
| JP4065787B2 (ja) * | 2002-08-30 | 2008-03-26 | 株式会社日立グローバルストレージテクノロジーズ | 磁気ヘッドおよび磁気記録再生装置 |
| US7236333B2 (en) * | 2003-12-11 | 2007-06-26 | Seagate Technology Llc | Domain wall free shields of MR sensors |
| US7974048B2 (en) | 2007-11-28 | 2011-07-05 | Tdk Corporation | Magneto-resistive effect device of CPP type having shield layers coupled with ferromagnetic layers |
| US8014108B2 (en) * | 2008-02-08 | 2011-09-06 | Tdk Corporation | Magnetoresistive device of the CPP type, utilizing insulating layers interposed in shield layers to form a closed magnetic path usable in a disk system |
| US8514524B2 (en) * | 2008-05-09 | 2013-08-20 | Headway Technologies, Inc. | Stabilized shields for magnetic recording heads |
| US8238063B2 (en) | 2009-07-07 | 2012-08-07 | Seagate Technology Llc | Magnetoresistive sensor with synthetic antiferromagnetic cap or seed layers |
| US8902548B2 (en) * | 2010-04-30 | 2014-12-02 | Seagate Technology Llc | Head with high readback resolution |
| US8437106B2 (en) * | 2010-10-08 | 2013-05-07 | Tdk Corporation | Thin film magnetic head including spin-valve film with free layer magnetically connected with shield |
| US8462467B2 (en) * | 2010-10-08 | 2013-06-11 | Tdk Corporation | Thin film magnetic head including soft layer magnetically connected with shield |
| US8451567B2 (en) * | 2010-12-13 | 2013-05-28 | Headway Technologies, Inc. | High resolution magnetic read head using top exchange biasing and/or lateral hand biasing of the free layer |
| US8472147B2 (en) * | 2011-05-06 | 2013-06-25 | Seagate Technology Llc | Magnetoresistive shield with lateral sub-magnets |
| US8570683B2 (en) | 2011-06-24 | 2013-10-29 | HGST Netherlands B.V. | Low permeability material for a side shield in a perpendicular magnetic head |
| US8630068B1 (en) * | 2011-11-15 | 2014-01-14 | Western Digital (Fremont), Llc | Method and system for providing a side shielded read transducer |
| US8630069B1 (en) * | 2012-10-04 | 2014-01-14 | HGST Netherlands B.V. | Magnetic shield having improved resistance to the hard bias magnetic field |
| US8760820B1 (en) * | 2012-11-30 | 2014-06-24 | Seagate Technology Llc | Magnetic element with coupled side shield |
| US8531801B1 (en) * | 2012-12-20 | 2013-09-10 | Western Digital (Fremont), Llc | Method and system for providing a read transducer having a composite magnetic shield with smooth interfaces |
| US8638530B1 (en) * | 2013-02-20 | 2014-01-28 | HGST Netherlands B.V. | Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor having a top shield with an antiparallel structure |
| US20140254047A1 (en) * | 2013-03-08 | 2014-09-11 | Seagate Technology Llc | Reader with decoupled magnetic seed layer |
-
2013
- 2013-07-30 US US13/953,936 patent/US8988832B2/en active Active
-
2014
- 2014-07-21 KR KR1020140091841A patent/KR101619929B1/ko not_active Expired - Fee Related
- 2014-07-24 CN CN201410356739.6A patent/CN104347083B/zh active Active
- 2014-07-25 JP JP2014151654A patent/JP6069265B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US8988832B2 (en) | 2015-03-24 |
| KR20150014855A (ko) | 2015-02-09 |
| JP6069265B2 (ja) | 2017-02-01 |
| KR101619929B1 (ko) | 2016-05-11 |
| JP2015028832A (ja) | 2015-02-12 |
| US20150036246A1 (en) | 2015-02-05 |
| CN104347083A (zh) | 2015-02-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |