JP6105506B2 - ベースシールドおよびセンサスタックを備えた装置、ならびにリーダセンサ - Google Patents
ベースシールドおよびセンサスタックを備えた装置、ならびにリーダセンサ Download PDFInfo
- Publication number
- JP6105506B2 JP6105506B2 JP2014041683A JP2014041683A JP6105506B2 JP 6105506 B2 JP6105506 B2 JP 6105506B2 JP 2014041683 A JP2014041683 A JP 2014041683A JP 2014041683 A JP2014041683 A JP 2014041683A JP 6105506 B2 JP6105506 B2 JP 6105506B2
- Authority
- JP
- Japan
- Prior art keywords
- shield
- base
- seed layer
- sensor
- separated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/10—Structure or manufacture of housings or shields for heads
- G11B5/11—Shielding of head against electric or magnetic fields
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3912—Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/398—Specially shaped layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
- Geophysics And Detection Of Objects (AREA)
- Burglar Alarm Systems (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
Description
磁気データストレージおよび検索システムにおいては、磁気読取り/書込みヘッドは、磁気ディスク上に記憶され磁気的に符号化された情報を検索するための磁気抵抗(magnetoresistive:MR)センサを有するリーダ部分を含む。ディスクの表面からの磁束により、MRセンサの感知層の磁化ベクトルの回転がもたらされ、これにより、MRセンサの電気抵抗率が変化する。MRセンサの抵抗率の変化は、MRセンサに電流を流してMRセンサにわたる電圧を測定することによって検出することができる。次いで、外部回路が電圧情報を適切なフォーマットに変換し、その情報を操作して、ディスク上で符号化された情報を復元させる。
この概要は、以下の詳細な説明においてさらに記載される概念の選択肢を単純な形式で紹介するために記載される。この概要は、主張された主題の重要な特徴または本質的な特徴を識別するよう意図されたものではなく、主張された主題の範囲を限定するのに用いられるよう意図されたものでもない。主張された主題の他の特徴、詳細、有用性および利点は、さまざまな実現例や、添付の図面にさらに図示され、添付の特許請求の範囲に規定される実現例についてのより詳細に記載された以下の詳細な説明から明らかになるだろう。
記載された技術は、添付の図面に関連付けて読まれるさまざまな実現例について記載する以下の詳細な説明から最もよく理解される。
磁気媒体からデータを読取るための高データ密度および高感度センサの需要が高まっている。感度を上げた巨大磁気抵抗(Giant Magnetoresistive:GMR)センサは、銅などの薄い導電性非磁性スペーサ層によって隔てられた2つの軟磁性層からなる。トンネル磁気抵抗(Tunnel Magnetoresistive:TMR)センサは、GMRを発展させたものであって、電子が、薄い絶縁トンネルバリアにわたる層に対して垂直な向きで回転しながら移動する。反強磁性(antiferromagnetic:AFM)材料(「ピンニング層(pinning layer:PL)」と称する)は、第1の軟磁性層が回転するのを防ぐためにこの第1の軟磁性層に隣接して配置される。この特性を示すAFM材料は「ピンニング材料」と称される。第1の軟磁性層は、回転が阻止されているため、「ピンド層」と称される。第2の軟磁性層は、外部場に応じて自由に回転し、「自由層(free layer:FL)」と称される。
Claims (6)
- 装置であって、
ベースシールドと、
センサスタックと、
前記センサスタックから前記ベースシールドを隔てるベースシード層とを備え、
前記ベースシード層は、前記ベースシールドと結合されたベース結合シード区域と、前記ベースシールドとは分離されるベース分離シード区域とを含み、
上部シールドをさらに備え、
前記センサスタックを構成する薄層の積層方向に対して垂直な方向における前記ベース分離シード区域の寸法は、前記ベースシールドと前記上部シールドとの間の間隔の寸法の少なくとも2倍である、装置。 - 前記ベース分離シード区域は、非磁性材料の層を用いて前記ベースシールドから分離される、請求項1に記載の装置。
- 前記上部シールドから前記センサスタックを隔てる上部シード層をさらに含み、前記上部シード層は、前記上部シールドとは少なくとも部分的に分離される、請求項1に記載の装置。
- 前記上部シード層は、
前記上部シールドと結合された上部結合シード区域と、
前記上部シールドとは分離された上部分離シード区域とを含む、請求項3に記載の装置。 - 前記センサスタックを構成する薄層の積層方向に対して垂直な方向における前記上部分離シード区域の寸法は、前記ベースシールドと前記上部シールドとの間の間隔の寸法の少なくとも2倍である、請求項4に記載の装置。
- 前記上部分離シード区域は、非磁性材料の層を用いて前記上部シールドから分離される、請求項4に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/791,334 | 2013-03-08 | ||
US13/791,334 US20140254047A1 (en) | 2013-03-08 | 2013-03-08 | Reader with decoupled magnetic seed layer |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014175038A JP2014175038A (ja) | 2014-09-22 |
JP2014175038A5 JP2014175038A5 (ja) | 2015-05-07 |
JP6105506B2 true JP6105506B2 (ja) | 2017-03-29 |
Family
ID=50231026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014041683A Expired - Fee Related JP6105506B2 (ja) | 2013-03-08 | 2014-03-04 | ベースシールドおよびセンサスタックを備えた装置、ならびにリーダセンサ |
Country Status (5)
Country | Link |
---|---|
US (3) | US20140254047A1 (ja) |
EP (1) | EP2775476A3 (ja) |
JP (1) | JP6105506B2 (ja) |
KR (1) | KR101590438B1 (ja) |
CN (1) | CN104036791A (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140254047A1 (en) * | 2013-03-08 | 2014-09-11 | Seagate Technology Llc | Reader with decoupled magnetic seed layer |
US8988832B2 (en) * | 2013-07-30 | 2015-03-24 | Seagate Technology Llc | Magnetoresistive sensor shield |
US9269381B1 (en) | 2014-09-15 | 2016-02-23 | Seagate Technology Llc | Sensor structure having layer with high magnetic moment |
CN114664330A (zh) * | 2020-12-23 | 2022-06-24 | 西部数据技术公司 | 具有与屏蔽件解耦的磁性籽层的双自由层读取器头 |
US11170808B1 (en) * | 2021-01-14 | 2021-11-09 | Western Digital Technologies, Inc. | Dual free layer reader head with magnetic seed layer decoupled from shield |
Family Cites Families (30)
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EP0821348A3 (en) * | 1996-07-25 | 1998-03-04 | Read-Rite Corporation | Decoupled magnetic head |
US6185080B1 (en) | 1999-03-29 | 2001-02-06 | International Business Machines Corporation | Dual tunnel junction sensor with a single antiferromagnetic layer |
US6344953B1 (en) | 2000-03-08 | 2002-02-05 | Seagate Technology, Llc | Magnetoresistive read sensor using overlaid leads with insulating current guide layer |
US6496335B2 (en) * | 2000-11-29 | 2002-12-17 | International Business Machines Corporation | Magnetic head shield structure having high magnetic stability |
JP4065787B2 (ja) * | 2002-08-30 | 2008-03-26 | 株式会社日立グローバルストレージテクノロジーズ | 磁気ヘッドおよび磁気記録再生装置 |
JP2004319709A (ja) * | 2003-04-15 | 2004-11-11 | Tdk Corp | 磁気抵抗効果素子、薄膜磁気ヘッド、磁気ヘッド装置及び磁気記録再生装置 |
US7782574B1 (en) * | 2005-04-11 | 2010-08-24 | Seagate Technology Llc | Magnetic heads disk drives and methods with thicker read shield structures for reduced stray field sensitivity |
US7719802B2 (en) | 2003-09-23 | 2010-05-18 | Seagate Technology Llc | Magnetic sensor with electrically defined active area dimensions |
US7236333B2 (en) * | 2003-12-11 | 2007-06-26 | Seagate Technology Llc | Domain wall free shields of MR sensors |
US7248449B1 (en) * | 2004-03-31 | 2007-07-24 | Western Digital (Fremont), Inc. | Magnetoresistive read sensor with reduced effective shield-to-shield spacing |
JP2006252694A (ja) * | 2005-03-11 | 2006-09-21 | Hitachi Global Storage Technologies Netherlands Bv | 垂直記録用磁気ヘッド |
US7835116B2 (en) | 2005-09-09 | 2010-11-16 | Seagate Technology Llc | Magnetoresistive stack with enhanced pinned layer |
US7876535B2 (en) * | 2008-01-24 | 2011-01-25 | Tdk Corporation | Magnetoresistive device of the CPP type, and magnetic disk system |
US8164862B2 (en) * | 2008-04-02 | 2012-04-24 | Headway Technologies, Inc. | Seed layer for TMR or CPP-GMR sensor |
US8537502B1 (en) | 2009-01-30 | 2013-09-17 | Western Digital (Fremont), Llc | Method and system for providing a magnetic transducer having improved shield-to-shield spacing |
US8238063B2 (en) | 2009-07-07 | 2012-08-07 | Seagate Technology Llc | Magnetoresistive sensor with synthetic antiferromagnetic cap or seed layers |
US8437105B2 (en) * | 2009-07-08 | 2013-05-07 | Seagate Technology Llc | Magnetic sensor with composite magnetic shield |
US8089734B2 (en) | 2010-05-17 | 2012-01-03 | Tdk Corporation | Magnetoresistive element having a pair of side shields |
US8922956B2 (en) * | 2010-06-04 | 2014-12-30 | Seagate Technology Llc | Tunneling magneto-resistive sensors with buffer layers |
US8437106B2 (en) | 2010-10-08 | 2013-05-07 | Tdk Corporation | Thin film magnetic head including spin-valve film with free layer magnetically connected with shield |
US8760819B1 (en) * | 2010-12-23 | 2014-06-24 | Western Digital (Fremont), Llc | Magnetic recording sensor with sputtered antiferromagnetic coupling trilayer between plated ferromagnetic shields |
US8659854B2 (en) * | 2011-05-06 | 2014-02-25 | Seagate Technology Llc | Magnetoresistive shield with stabilizing feature |
US8472147B2 (en) | 2011-05-06 | 2013-06-25 | Seagate Technology Llc | Magnetoresistive shield with lateral sub-magnets |
US8630068B1 (en) | 2011-11-15 | 2014-01-14 | Western Digital (Fremont), Llc | Method and system for providing a side shielded read transducer |
US8760820B1 (en) * | 2012-11-30 | 2014-06-24 | Seagate Technology Llc | Magnetic element with coupled side shield |
US8531801B1 (en) | 2012-12-20 | 2013-09-10 | Western Digital (Fremont), Llc | Method and system for providing a read transducer having a composite magnetic shield with smooth interfaces |
US20140218821A1 (en) * | 2013-02-07 | 2014-08-07 | Seagate Technology Llc | Data reader with magnetic seed lamination |
US8638530B1 (en) | 2013-02-20 | 2014-01-28 | HGST Netherlands B.V. | Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor having a top shield with an antiparallel structure |
US20140254047A1 (en) * | 2013-03-08 | 2014-09-11 | Seagate Technology Llc | Reader with decoupled magnetic seed layer |
US8988832B2 (en) * | 2013-07-30 | 2015-03-24 | Seagate Technology Llc | Magnetoresistive sensor shield |
-
2013
- 2013-03-08 US US13/791,334 patent/US20140254047A1/en not_active Abandoned
-
2014
- 2014-03-04 JP JP2014041683A patent/JP6105506B2/ja not_active Expired - Fee Related
- 2014-03-06 EP EP14158162.9A patent/EP2775476A3/en not_active Withdrawn
- 2014-03-07 CN CN201410082831.8A patent/CN104036791A/zh active Pending
- 2014-03-07 KR KR1020140027166A patent/KR101590438B1/ko active IP Right Grant
- 2014-07-29 US US14/445,916 patent/US8970994B2/en active Active
-
2015
- 2015-03-03 US US14/636,967 patent/US9153251B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9153251B2 (en) | 2015-10-06 |
KR20140110788A (ko) | 2014-09-17 |
US8970994B2 (en) | 2015-03-03 |
EP2775476A3 (en) | 2015-03-04 |
US20140254047A1 (en) | 2014-09-11 |
CN104036791A (zh) | 2014-09-10 |
US20150243305A1 (en) | 2015-08-27 |
KR101590438B1 (ko) | 2016-02-01 |
EP2775476A2 (en) | 2014-09-10 |
JP2014175038A (ja) | 2014-09-22 |
US20140334042A1 (en) | 2014-11-13 |
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