JP5779543B2 - 装置、データ記憶装置および磁気素子 - Google Patents
装置、データ記憶装置および磁気素子 Download PDFInfo
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- JP5779543B2 JP5779543B2 JP2012105244A JP2012105244A JP5779543B2 JP 5779543 B2 JP5779543 B2 JP 5779543B2 JP 2012105244 A JP2012105244 A JP 2012105244A JP 2012105244 A JP2012105244 A JP 2012105244A JP 5779543 B2 JP5779543 B2 JP 5779543B2
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- 230000005291 magnetic effect Effects 0.000 title claims description 103
- 238000013500 data storage Methods 0.000 title claims description 10
- 230000000087 stabilizing effect Effects 0.000 claims description 46
- 230000005294 ferromagnetic effect Effects 0.000 claims description 36
- 230000006641 stabilisation Effects 0.000 claims description 34
- 238000011105 stabilization Methods 0.000 claims description 34
- 230000004907 flux Effects 0.000 claims description 33
- 230000005415 magnetization Effects 0.000 claims description 29
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 14
- 125000006850 spacer group Chemical group 0.000 claims description 4
- 230000004044 response Effects 0.000 claims description 3
- 239000002885 antiferromagnetic material Substances 0.000 claims 2
- 230000008878 coupling Effects 0.000 description 15
- 238000010168 coupling process Methods 0.000 description 15
- 238000005859 coupling reaction Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000005381 magnetic domain Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000002463 transducing effect Effects 0.000 description 5
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 229910003321 CoFe Inorganic materials 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 229910018979 CoPt Inorganic materials 0.000 description 1
- 229910005335 FePt Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- 230000000153 supplemental effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3912—Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
- G11B5/3932—Magnetic biasing films
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/398—Specially shaped layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/123—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Description
この発明のさまざまな実施例は、一般に、望ましくない磁束から磁気抵抗素子を保護することができ得る磁気シールドに向けられる。
この開示は、一般に、望ましくない磁束から磁気抵抗(MR)素子を保護することができる磁気シールドに関する。エレクトロニクス装置がより精巧になるにつれて、より大きなデータ容量に対する需要は、データ記憶媒体に書込まれるデータのサイズにさらなる重点を置き、それは結果的に磁気シールドサイズにおける低減という結果となる。より小さな磁気シールドは、望ましくない磁束からMR素子を十分に保護する能力の低下により、意図せずして磁気的不安定性を経験する場合がある。
Claims (12)
- 空気軸受面(ABS)から第1の距離を延在する少なくとも1つのシールドに近接する磁気抵抗(MR)リーダを含み、MRリーダは、ABSから第2の距離を延在し、シールドは、MRリーダに接触するように近接し、ABSから第1の距離未満かつ第2の距離よりも大きい第3の距離を延在する、安定化構造を有し、
前記第3の距離に対する前記安定化構造の幅の比である、前記安定化構造のアスペクト比は、1より大きく、
シールドは第1の幅を有し、安定化構造は、MRリーダおよび側方に配置されたバイアス印加磁石の対の幅と一致する第2の幅を有し、第2の幅は第1の幅未満である、装置。 - シールドは、幅および深さによって定まる第1の面積を有するシールド層を有し、安定化構造は、第1の面積未満である第2の面積を有し、MRリーダは、第2の面積未満である第3の面積を有する、請求項1に記載の装置。
- 安定化構造における強磁性層は所定の磁化を有する、請求項1または2に記載の装置。
- 強磁性層は、MRリーダにデフォルト磁化をあたえる側方バイアス印加磁石に磁気的に結合される、請求項3に記載の装置。
- 強磁性層は反強磁性層によって固定される、請求項3に記載の装置。
- 強磁性層は少なくとも1つの合成反強磁性物質(SAF)を含む、請求項3に記載の装置。
- シールドおよび安定化構造は後端シールドとして協調して機能する、請求項1から6のいずれか1項に記載の装置。
- 空気軸受面(ABS)上に構成され、ABSに垂直な第1のストライプ高さ距離を延在する磁気抵抗(MR)リーダと;
ABS上に構成され、ABSに垂直な第2のストライプ高さ距離を延在する頂部シールドと;
ABS上に位置決めされ、MRリーダおよび頂部シールドの両方に結合された安定化構造とを含み、安定化構造は、第1のストライプ高さ距離より大きくかつ第2のストライプ高さ距離未満である第3のストライプ高さを有し、
前記安定化構造の前記第3のストライプ高さに対する前記安定化構造の幅の比である、前記安定化構造のアスペクト比は、1より大きく、
頂部シールドは第1の幅を有し、安定化構造は、MRリーダおよび側方に配置されたバイアス印加磁石の対の幅と一致する第2の幅を有し、第2の幅は第1の幅未満である、データ記憶装置。 - 安定化構造は、幅および深さによって定まる第1の面積を有し、MRリーダは幅および深さによって定まる第2の面積を有し、頂部シールドは幅および深さによって定まる第3の面積を有し、第1の面積は、第2の面積より大きく、第3の面積未満である、請求項8に記載のデータ記憶装置。
- 側方バイアス印加磁石間に配置される磁気抵抗(MR)リーダと;
空気軸受面(ABS)から第1の長さ、幅および距離を有し、MRリーダおよび側方バイアス印加磁石に接触するように近接する安定化構造とを含み、安定化構造は望ましくない磁束を能動的に遮断するために所定の磁化に設定され;さらに、
ABSから第2の長さ、幅および距離を有し、望ましくない量の磁束を受動的に遮断するよう構成されたシールド層を含み、ABSからの第2の距離は第1の距離より大きく、
前記安定化構造の深さに対する前記安定化構造の幅の比である、前記安定化構造のアスペクト比は、1より大きく、
MRリーダは、ABSから第3の長さ、幅および距離を有し、
ABSからの第3の距離は第1の距離および第2の距離よりも小さく、
第1の幅は、第2の幅未満であるとともに、MRリーダおよび側方バイアス印加磁石の対の幅に一致し、
安定化構造は、幅および深さによって定まる第1の面積を有し、シールド層は幅および深さによって定まる第2の面積を有し、MRリーダは幅および深さによって定まる第3の面積を有し、第1の面積は、第3の面積より大きく、第2の面積未満である、磁気素子。 - シールドは、遭遇した磁束に磁気的に応答し、安定化構造は、磁束に応答して所定の磁化を維持する、請求項10に記載の磁気素子。
- 安定化構造は、非磁性スペーサ層によって分離された第1および第2の強磁性層を含む合成反強磁性体(SAF)に結合された反強磁性体を含む、請求項10または11に記載の磁気素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/102,663 US8659854B2 (en) | 2011-05-06 | 2011-05-06 | Magnetoresistive shield with stabilizing feature |
US13/102,663 | 2011-05-06 |
Publications (2)
Publication Number | Publication Date |
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JP2012234618A JP2012234618A (ja) | 2012-11-29 |
JP5779543B2 true JP5779543B2 (ja) | 2015-09-16 |
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JP2012105244A Expired - Fee Related JP5779543B2 (ja) | 2011-05-06 | 2012-05-02 | 装置、データ記憶装置および磁気素子 |
Country Status (3)
Country | Link |
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US (1) | US8659854B2 (ja) |
JP (1) | JP5779543B2 (ja) |
CN (1) | CN102779530B (ja) |
Families Citing this family (19)
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US8760819B1 (en) | 2010-12-23 | 2014-06-24 | Western Digital (Fremont), Llc | Magnetic recording sensor with sputtered antiferromagnetic coupling trilayer between plated ferromagnetic shields |
US8760823B1 (en) * | 2011-12-20 | 2014-06-24 | Western Digital (Fremont), Llc | Method and system for providing a read transducer having soft and hard magnetic bias structures |
US8797692B1 (en) | 2012-09-07 | 2014-08-05 | Western Digital (Fremont), Llc | Magnetic recording sensor with AFM exchange coupled shield stabilization |
US8760820B1 (en) * | 2012-11-30 | 2014-06-24 | Seagate Technology Llc | Magnetic element with coupled side shield |
US20140254047A1 (en) | 2013-03-08 | 2014-09-11 | Seagate Technology Llc | Reader with decoupled magnetic seed layer |
US8970991B2 (en) * | 2013-03-12 | 2015-03-03 | Seagate Technology Llc | Coupling feature in a magnetoresistive trilayer lamination |
US8780505B1 (en) * | 2013-03-12 | 2014-07-15 | Western Digital (Fremont), Llc | Method and system for providing a read transducer having an improved composite magnetic shield |
US9013836B1 (en) | 2013-04-02 | 2015-04-21 | Western Digital (Fremont), Llc | Method and system for providing an antiferromagnetically coupled return pole |
US9047884B2 (en) | 2013-08-06 | 2015-06-02 | Seagate Technology Llc | Data reader with horizontal lamination shield |
US9230578B2 (en) * | 2013-12-23 | 2016-01-05 | HGST Netherlands B.V. | Multiple readers for high resolution and SNR for high areal density application |
US9349397B2 (en) | 2014-03-26 | 2016-05-24 | HGST Netherlands B.V. | Higher stability read head utilizing a partial milling process |
US9230565B1 (en) * | 2014-06-24 | 2016-01-05 | Western Digital (Fremont), Llc | Magnetic shield for magnetic recording head |
US8873204B1 (en) * | 2014-07-25 | 2014-10-28 | HGST Netherlands B.V. | Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor structure with multiple stacked sensors and center shield with CoFeB insertion layer |
US20160055868A1 (en) * | 2014-08-21 | 2016-02-25 | HGST Netherlands B.V. | Multiple-input-multiple-output sensor designs for magnetic applications |
US10074387B1 (en) | 2014-12-21 | 2018-09-11 | Western Digital (Fremont), Llc | Method and system for providing a read transducer having symmetric antiferromagnetically coupled shields |
US9449621B1 (en) | 2015-03-26 | 2016-09-20 | Western Digital (Fremont), Llc | Dual free layer magnetic reader having a rear bias structure having a high aspect ratio |
US9685177B2 (en) * | 2015-07-08 | 2017-06-20 | Seagate Technology Llc | Sensor stabilization in a multiple sensor magnetic reproducing device |
US10115418B2 (en) | 2016-11-21 | 2018-10-30 | Headway Technologies, Inc. | Hard magnet stabilized shield for double (2DMR) or triple (3DMR) dimension magnetic reader structures |
US10522173B1 (en) * | 2018-06-13 | 2019-12-31 | Headway Technologies, Inc. | Magnetic read head structure with improved bottom shield design for better reader performance |
Family Cites Families (16)
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US5515221A (en) | 1994-12-30 | 1996-05-07 | International Business Machines Corporation | Magnetically stable shields for MR head |
US6700760B1 (en) * | 2000-04-27 | 2004-03-02 | Seagate Technology Llc | Tunneling magnetoresistive head in current perpendicular to plane mode |
US6597546B2 (en) | 2001-04-19 | 2003-07-22 | International Business Machines Corporation | Tunnel junction sensor with an antiferromagnetic (AFM) coupled flux guide |
US7236333B2 (en) | 2003-12-11 | 2007-06-26 | Seagate Technology Llc | Domain wall free shields of MR sensors |
JP2005203063A (ja) * | 2004-01-19 | 2005-07-28 | Hitachi Global Storage Technologies Netherlands Bv | 磁気ヘッド及び磁気記録再生装置 |
JP4008456B2 (ja) * | 2005-04-27 | 2007-11-14 | Tdk株式会社 | 磁界検出センサ、薄膜磁気ヘッド、薄膜磁気ヘッドのウエハ、ヘッドジンバルアセンブリ、およびハードディスク装置 |
US7436637B2 (en) * | 2005-10-05 | 2008-10-14 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetoresistive sensor having an improved pinning structure |
US7606007B2 (en) | 2006-02-17 | 2009-10-20 | Hitachi Global Storage Technologies Netherlands B.V. | Shield stabilization for magnetoresistive sensors |
JP2008192269A (ja) * | 2007-02-07 | 2008-08-21 | Hitachi Global Storage Technologies Netherlands Bv | 磁気リード・ヘッド及びその製造方法 |
US7715155B2 (en) * | 2007-04-11 | 2010-05-11 | Tdk Corporation | Thin-film magnetic head and manufacturing method thereof |
JP2009259355A (ja) * | 2008-04-18 | 2009-11-05 | Hitachi Global Storage Technologies Netherlands Bv | Cpp磁気リード・ヘッド |
US8514524B2 (en) | 2008-05-09 | 2013-08-20 | Headway Technologies, Inc. | Stabilized shields for magnetic recording heads |
US8477461B2 (en) * | 2008-07-29 | 2013-07-02 | Tdk Corporation | Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layers |
US8310791B2 (en) * | 2009-03-13 | 2012-11-13 | Tdk Corporation | Magnetoresistive effect element and magnetic disk device |
US8369048B2 (en) * | 2009-08-31 | 2013-02-05 | Tdk Corporation | CPP-type thin film magnetic head provided with side shields including a pair of antimagnetically exchanged-coupled side shield magnetic layers |
US8089734B2 (en) * | 2010-05-17 | 2012-01-03 | Tdk Corporation | Magnetoresistive element having a pair of side shields |
-
2011
- 2011-05-06 US US13/102,663 patent/US8659854B2/en active Active
-
2012
- 2012-05-02 JP JP2012105244A patent/JP5779543B2/ja not_active Expired - Fee Related
- 2012-05-04 CN CN201210210509.XA patent/CN102779530B/zh active Active
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Publication number | Publication date |
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JP2012234618A (ja) | 2012-11-29 |
US20120281320A1 (en) | 2012-11-08 |
CN102779530B (zh) | 2015-11-25 |
CN102779530A (zh) | 2012-11-14 |
US8659854B2 (en) | 2014-02-25 |
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