KR101619374B1 - 다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출 - Google Patents

다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출 Download PDF

Info

Publication number
KR101619374B1
KR101619374B1 KR1020107027159A KR20107027159A KR101619374B1 KR 101619374 B1 KR101619374 B1 KR 101619374B1 KR 1020107027159 A KR1020107027159 A KR 1020107027159A KR 20107027159 A KR20107027159 A KR 20107027159A KR 101619374 B1 KR101619374 B1 KR 101619374B1
Authority
KR
South Korea
Prior art keywords
spectra
polishing
end point
substrate
chemical mechanical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020107027159A
Other languages
English (en)
Korean (ko)
Other versions
KR20110021842A (ko
Inventor
준 킨
시바쿠말 단다파니
해리 큐. 리
토마스 에이치. 오스터헬드
자이즈 츄
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20110021842A publication Critical patent/KR20110021842A/ko
Application granted granted Critical
Publication of KR101619374B1 publication Critical patent/KR101619374B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020107027159A 2008-05-02 2009-04-29 다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출 Active KR101619374B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US4996508P 2008-05-02 2008-05-02
US61/049,965 2008-05-02

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020167010766A Division KR20160052769A (ko) 2008-05-02 2009-04-29 다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출

Publications (2)

Publication Number Publication Date
KR20110021842A KR20110021842A (ko) 2011-03-04
KR101619374B1 true KR101619374B1 (ko) 2016-05-10

Family

ID=41255749

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020107027159A Active KR101619374B1 (ko) 2008-05-02 2009-04-29 다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출
KR1020167010766A Ceased KR20160052769A (ko) 2008-05-02 2009-04-29 다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020167010766A Ceased KR20160052769A (ko) 2008-05-02 2009-04-29 다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출

Country Status (5)

Country Link
US (1) US20090275265A1 (https=)
JP (1) JP5542802B2 (https=)
KR (2) KR101619374B1 (https=)
CN (2) CN102017094B (https=)
WO (1) WO2009134865A2 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8392012B2 (en) * 2008-10-27 2013-03-05 Applied Materials, Inc. Multiple libraries for spectrographic monitoring of zones of a substrate during processing
US8260446B2 (en) 2005-08-22 2012-09-04 Applied Materials, Inc. Spectrographic monitoring of a substrate during processing using index values
US20100103422A1 (en) * 2008-10-27 2010-04-29 Applied Materials, Inc. Goodness of fit in spectrographic monitoring of a substrate during processing
TWI496661B (zh) * 2010-04-28 2015-08-21 應用材料股份有限公司 用於光學監測之參考光譜的自動產生
US9579767B2 (en) 2010-04-28 2017-02-28 Applied Materials, Inc. Automatic generation of reference spectra for optical monitoring of substrates
JP6039545B2 (ja) * 2010-05-05 2016-12-07 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 終点検出のためのスペクトル特徴部の動的または適応的な追跡
US8666665B2 (en) 2010-06-07 2014-03-04 Applied Materials, Inc. Automatic initiation of reference spectra library generation for optical monitoring
US8954186B2 (en) 2010-07-30 2015-02-10 Applied Materials, Inc. Selecting reference libraries for monitoring of multiple zones on a substrate
US20120034844A1 (en) * 2010-08-05 2012-02-09 Applied Materials, Inc. Spectrographic monitoring using index tracking after detection of layer clearing
TW201223702A (en) * 2010-08-06 2012-06-16 Applied Materials Inc Techniques for matching measured spectra to reference spectra for in-situ optical monitoring
US8535115B2 (en) 2011-01-28 2013-09-17 Applied Materials, Inc. Gathering spectra from multiple optical heads
US8547538B2 (en) * 2011-04-21 2013-10-01 Applied Materials, Inc. Construction of reference spectra with variations in environmental effects
US8755928B2 (en) 2011-04-27 2014-06-17 Applied Materials, Inc. Automatic selection of reference spectra library
WO2012148716A2 (en) * 2011-04-28 2012-11-01 Applied Materials, Inc. Varying coefficients and functions for polishing control
US20140024293A1 (en) * 2012-07-19 2014-01-23 Jimin Zhang Control Of Overpolishing Of Multiple Substrates On the Same Platen In Chemical Mechanical Polishing
US8808059B1 (en) 2013-02-27 2014-08-19 Applied Materials, Inc. Spectraphic monitoring based on pre-screening of theoretical library
CN103887206B (zh) * 2014-04-02 2017-05-31 中国电子科技集团公司第四十五研究所 化学机械平坦化终点检测方法及装置
US20160033958A1 (en) * 2014-08-01 2016-02-04 Globalfoundries Inc. Endpoint determination using individually measured target spectra
JP6399873B2 (ja) * 2014-09-17 2018-10-03 株式会社荏原製作所 膜厚信号処理装置、研磨装置、膜厚信号処理方法、及び、研磨方法
CN105057712B (zh) * 2015-08-24 2019-04-23 佛山新成洪鼎机械技术有限公司 轴自动定位深孔盲孔加工机床
TWI807987B (zh) * 2016-11-30 2023-07-01 美商應用材料股份有限公司 使用神經網路的光譜監測
CN111587478B (zh) 2018-06-28 2025-02-21 应用材料公司 用于光谱监测的机器学习系统的训练光谱产生
JP2025522492A (ja) 2022-06-22 2025-07-15 アプライド マテリアルズ インコーポレイテッド 研磨プロセス制御用ウインドウ論理

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002517911A (ja) 1998-06-08 2002-06-18 スピードファム−アイピーイーシー コーポレイション 化学機械的研磨の終了点を検出する方法および装置
JP2010223578A (ja) 2009-03-19 2010-10-07 Shanghai Jiao Tong Univ 熱交換器用フィン及び熱交換器

Family Cites Families (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5747380A (en) * 1996-02-26 1998-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Robust end-point detection for contact and via etching
US5770948A (en) * 1996-03-19 1998-06-23 International Business Machines Corporation Rotary signal coupling for chemical mechanical polishing endpoint detection with a strasbaugh tool
US6489624B1 (en) * 1997-07-18 2002-12-03 Nikon Corporation Apparatus and methods for detecting thickness of a patterned layer
JP4460659B2 (ja) * 1997-10-22 2010-05-12 株式会社ルネサステクノロジ 薄膜の膜厚計測方法及びその装置並びにそれを用いた薄膜デバイスの製造方法及びその製造装置
TW374050B (en) * 1997-10-31 1999-11-11 Applied Materials Inc Method and apparatus for modeling substrate reflectivity during chemical mechanical polishing
JPH11325840A (ja) * 1998-05-19 1999-11-26 Dainippon Screen Mfg Co Ltd メタル残膜判定方法およびメタル残膜判定装置
US6271047B1 (en) * 1998-05-21 2001-08-07 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
US6361646B1 (en) * 1998-06-08 2002-03-26 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
TW398036B (en) * 1998-08-18 2000-07-11 Promos Technologies Inc Method of monitoring of chemical mechanical polishing end point and uniformity
IL125964A (en) * 1998-08-27 2003-10-31 Tevet Process Control Technolo Method and apparatus for measuring the thickness of a transparent film, particularly of a photoresist film on a semiconductor substrate
JP4484370B2 (ja) * 1998-11-02 2010-06-16 アプライド マテリアルズ インコーポレイテッド 基板上のメタル層の化学機械研磨に関して終点を決定するための方法及び基板のメタル層を研磨するための装置
US6159073A (en) * 1998-11-02 2000-12-12 Applied Materials, Inc. Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing
US6908374B2 (en) * 1998-12-01 2005-06-21 Nutool, Inc. Chemical mechanical polishing endpoint detection
US6172756B1 (en) * 1998-12-11 2001-01-09 Filmetrics, Inc. Rapid and accurate end point detection in a noisy environment
US6184985B1 (en) * 1998-12-11 2001-02-06 Filmetrics, Inc. Spectrometer configured to provide simultaneous multiple intensity spectra from independent light sources
US6204922B1 (en) * 1998-12-11 2001-03-20 Filmetrics, Inc. Rapid and accurate thin film measurement of individual layers in a multi-layered or patterned sample
US6190234B1 (en) * 1999-01-25 2001-02-20 Applied Materials, Inc. Endpoint detection with light beams of different wavelengths
US6334807B1 (en) * 1999-04-30 2002-01-01 International Business Machines Corporation Chemical mechanical polishing in-situ end point system
JP3327289B2 (ja) * 2000-03-29 2002-09-24 株式会社ニコン 工程終了点測定装置及び測定方法及び研磨装置及び半導体デバイス製造方法及び信号処理プログラムを記録した記録媒体
WO2000071971A1 (en) * 1999-05-24 2000-11-30 Luxtron Corporation Optical techniques for measuring layer thicknesses
US6358327B1 (en) * 1999-06-29 2002-03-19 Applied Materials, Inc. Method for endpoint detection using throttle valve position
US6340602B1 (en) * 1999-12-10 2002-01-22 Sensys Instruments Method of measuring meso-scale structures on wafers
JP3259225B2 (ja) * 1999-12-27 2002-02-25 株式会社ニコン 研磨状況モニタ方法及びその装置、研磨装置、プロセスウエハ、半導体デバイス製造方法、並びに半導体デバイス
JP3506114B2 (ja) * 2000-01-25 2004-03-15 株式会社ニコン モニタ装置及びこのモニタ装置を具えた研磨装置及び研磨方法
AU2001279126A1 (en) * 2000-07-31 2002-02-13 Silicon Valley Group Inc In-situ method and apparatus for end point detection in chemical mechanical polishing
AU2001279247A1 (en) * 2000-08-10 2002-02-25 Sensys Instruments Corporation Database interpolation method for optical measurement of diffractive microstructures
US6511363B2 (en) * 2000-12-27 2003-01-28 Tokyo Seimitsu Co., Ltd. Polishing end point detecting device for wafer polishing apparatus
WO2002065545A2 (en) * 2001-02-12 2002-08-22 Sensys Instruments Corporation Overlay alignment metrology using diffraction gratings
JP3946470B2 (ja) * 2001-03-12 2007-07-18 株式会社デンソー 半導体層の膜厚測定方法及び半導体基板の製造方法
US6812478B2 (en) * 2001-03-19 2004-11-02 Lam Research Corporation In-situ detection of thin-metal interface using optical interference via a dynamically updated reference
US6676482B2 (en) * 2001-04-20 2004-01-13 Speedfam-Ipec Corporation Learning method and apparatus for predictive determination of endpoint during chemical mechanical planarization using sparse sampling
US6966816B2 (en) * 2001-05-02 2005-11-22 Applied Materials, Inc. Integrated endpoint detection system with optical and eddy current monitoring
US6762838B2 (en) * 2001-07-02 2004-07-13 Tevet Process Control Technologies Ltd. Method and apparatus for production line screening
JP3932836B2 (ja) * 2001-07-27 2007-06-20 株式会社日立製作所 薄膜の膜厚計測方法及びその装置並びにそれを用いたデバイスの製造方法
US6678046B2 (en) * 2001-08-28 2004-01-13 Therma-Wave, Inc. Detector configurations for optical metrology
US6618130B2 (en) * 2001-08-28 2003-09-09 Speedfam-Ipec Corporation Method and apparatus for optical endpoint detection during chemical mechanical polishing
US6898596B2 (en) * 2001-10-23 2005-05-24 Therma-Wave, Inc. Evolution of library data sets
US6678055B2 (en) * 2001-11-26 2004-01-13 Tevet Process Control Technologies Ltd. Method and apparatus for measuring stress in semiconductor wafers
US6939198B1 (en) * 2001-12-28 2005-09-06 Applied Materials, Inc. Polishing system with in-line and in-situ metrology
US6942546B2 (en) * 2002-01-17 2005-09-13 Asm Nutool, Inc. Endpoint detection for non-transparent polishing member
US6813034B2 (en) * 2002-02-05 2004-11-02 Therma-Wave, Inc. Analysis of isolated and aperiodic structures with simultaneous multiple angle of incidence measurements
US6609086B1 (en) * 2002-02-12 2003-08-19 Timbre Technologies, Inc. Profile refinement for integrated circuit metrology
US6806948B2 (en) * 2002-03-29 2004-10-19 Lam Research Corporation System and method of broad band optical end point detection for film change indication
US20040007325A1 (en) * 2002-06-11 2004-01-15 Applied Materials, Inc. Integrated equipment set for forming a low K dielectric interconnect on a substrate
US6947135B2 (en) * 2002-07-01 2005-09-20 Therma-Wave, Inc. Reduced multicubic database interpolation method for optical measurement of diffractive microstructures
US20040018647A1 (en) * 2002-07-02 2004-01-29 Applied Materials, Inc. Method for controlling the extent of notch or undercut in an etched profile using optical reflectometry
US20050061674A1 (en) * 2002-09-16 2005-03-24 Yan Wang Endpoint compensation in electroprocessing
JP4542324B2 (ja) * 2002-10-17 2010-09-15 株式会社荏原製作所 研磨状態監視装置及びポリッシング装置
US6885467B2 (en) * 2002-10-28 2005-04-26 Tevet Process Control Technologies Ltd. Method and apparatus for thickness decomposition of complicated layer structures
US7265382B2 (en) * 2002-11-12 2007-09-04 Applied Materials, Inc. Method and apparatus employing integrated metrology for improved dielectric etch efficiency
CN100349267C (zh) * 2002-11-27 2007-11-14 东洋橡胶工业株式会社 研磨垫及半导体器件的制造方法
IL153894A (en) * 2003-01-12 2010-05-31 Nova Measuring Instr Ltd Method and system for measuring the thickness of thin conductive layers
US7049156B2 (en) * 2003-03-19 2006-05-23 Verity Instruments, Inc. System and method for in-situ monitor and control of film thickness and trench depth
JP2004363201A (ja) * 2003-06-03 2004-12-24 Matsushita Electric Ind Co Ltd ウェハの研磨方法および研磨装置
US7008296B2 (en) * 2003-06-18 2006-03-07 Applied Materials, Inc. Data processing for monitoring chemical mechanical polishing
US20050026542A1 (en) * 2003-07-31 2005-02-03 Tezer Battal Detection system for chemical-mechanical planarization tool
US7097537B1 (en) * 2003-08-18 2006-08-29 Applied Materials, Inc. Determination of position of sensor measurements during polishing
JP4464642B2 (ja) * 2003-09-10 2010-05-19 株式会社荏原製作所 研磨状態監視装置、研磨状態監視方法、研磨装置及び研磨方法
US7166014B2 (en) * 2004-01-26 2007-01-23 Tbw Industries Inc. Chemical mechanical planarization process control utilizing in-situ conditioning process
US7255771B2 (en) * 2004-03-26 2007-08-14 Applied Materials, Inc. Multiple zone carrier head with flexible membrane
JP5017765B2 (ja) * 2004-03-30 2012-09-05 日本電気株式会社 光変調器とその製造方法並びに変調光学系とこれを用いた光インターコネクト装置並びに光通信装置
US7120553B2 (en) * 2004-07-22 2006-10-10 Applied Materials, Inc. Iso-reflectance wavelengths
US7393459B2 (en) * 2004-08-06 2008-07-01 Applied Materials, Inc. Method for automatic determination of substrates states in plasma processing chambers
US7306507B2 (en) * 2005-08-22 2007-12-11 Applied Materials, Inc. Polishing pad assembly with glass or crystalline window
KR101324644B1 (ko) * 2005-08-22 2013-11-01 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법
US7409260B2 (en) * 2005-08-22 2008-08-05 Applied Materials, Inc. Substrate thickness measuring during polishing
US7406394B2 (en) * 2005-08-22 2008-07-29 Applied Materials, Inc. Spectra based endpointing for chemical mechanical polishing
US20070077671A1 (en) * 2005-10-03 2007-04-05 Applied Materials In-situ substrate imaging
US7277819B2 (en) * 2005-10-31 2007-10-02 Eastman Kodak Company Measuring layer thickness or composition changes
TWI422798B (zh) * 2006-10-06 2014-01-11 荏原製作所股份有限公司 加工終點檢測方法、研磨方法及研磨裝置
US7998358B2 (en) * 2006-10-31 2011-08-16 Applied Materials, Inc. Peak-based endpointing for chemical mechanical polishing
US7612873B2 (en) * 2006-11-13 2009-11-03 Dainippon Screen Mfg. Co., Ltd. Surface form measuring apparatus and stress measuring apparatus and surface form measuring method and stress measuring method
US7444198B2 (en) * 2006-12-15 2008-10-28 Applied Materials, Inc. Determining physical property of substrate
TWI445098B (zh) * 2007-02-23 2014-07-11 應用材料股份有限公司 使用光譜來判斷研磨終點
US7663766B2 (en) * 2007-09-05 2010-02-16 Advanced Micro Devices, Inc. Incorporating film optical property measurements into scatterometry metrology
US20100114532A1 (en) * 2008-11-03 2010-05-06 Applied Materials, Inc. Weighted spectrographic monitoring of a substrate during processing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002517911A (ja) 1998-06-08 2002-06-18 スピードファム−アイピーイーシー コーポレイション 化学機械的研磨の終了点を検出する方法および装置
JP2010223578A (ja) 2009-03-19 2010-10-07 Shanghai Jiao Tong Univ 熱交換器用フィン及び熱交換器

Also Published As

Publication number Publication date
US20090275265A1 (en) 2009-11-05
WO2009134865A2 (en) 2009-11-05
CN102017094B (zh) 2013-11-20
WO2009134865A3 (en) 2010-02-18
CN102017094A (zh) 2011-04-13
KR20160052769A (ko) 2016-05-12
KR20110021842A (ko) 2011-03-04
CN103537975A (zh) 2014-01-29
JP2011520264A (ja) 2011-07-14
JP5542802B2 (ja) 2014-07-09

Similar Documents

Publication Publication Date Title
KR101619374B1 (ko) 다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출
US8369978B2 (en) Adjusting polishing rates by using spectrographic monitoring of a substrate during processing
US8874250B2 (en) Spectrographic monitoring of a substrate during processing using index values
US10766119B2 (en) Spectra based endpointing for chemical mechanical polishing
US10589397B2 (en) Endpoint control of multiple substrate zones of varying thickness in chemical mechanical polishing
US9142466B2 (en) Using spectra to determine polishing endpoints
US8392012B2 (en) Multiple libraries for spectrographic monitoring of zones of a substrate during processing
US20100114532A1 (en) Weighted spectrographic monitoring of a substrate during processing
US20100103422A1 (en) Goodness of fit in spectrographic monitoring of a substrate during processing
KR101616024B1 (ko) 프로세싱 동안에 기판의 분광 사진 모니터링에 있어서의 적합도
US20110282477A1 (en) Endpoint control of multiple substrates with multiple zones on the same platen in chemical mechanical polishing

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

A107 Divisional application of patent
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20190430

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 10

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000