KR101608932B1 - 3족 질화물 함유 표면의 화학적 기계적 연마방법 - Google Patents

3족 질화물 함유 표면의 화학적 기계적 연마방법 Download PDF

Info

Publication number
KR101608932B1
KR101608932B1 KR1020137028408A KR20137028408A KR101608932B1 KR 101608932 B1 KR101608932 B1 KR 101608932B1 KR 1020137028408 A KR1020137028408 A KR 1020137028408A KR 20137028408 A KR20137028408 A KR 20137028408A KR 101608932 B1 KR101608932 B1 KR 101608932B1
Authority
KR
South Korea
Prior art keywords
group iii
iii nitride
particles
soft
containing surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020137028408A
Other languages
English (en)
Korean (ko)
Other versions
KR20130133899A (ko
Inventor
라지브 케이. 싱하
아룰 차카라바티 아르주난
디피카 싱하
아부다야 미쉬라
Original Assignee
신메트, 잉크
유니버시티 오브 플로리다 리서치 파운데이션, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 신메트, 잉크, 유니버시티 오브 플로리다 리서치 파운데이션, 인크. filed Critical 신메트, 잉크
Publication of KR20130133899A publication Critical patent/KR20130133899A/ko
Application granted granted Critical
Publication of KR101608932B1 publication Critical patent/KR101608932B1/ko
Assigned to 엔테그리스, 아이엔씨. reassignment 엔테그리스, 아이엔씨. 권리지분의 전부이전등록 Assignors: 신메트, 잉크
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020137028408A 2011-03-28 2012-03-28 3족 질화물 함유 표면의 화학적 기계적 연마방법 Active KR101608932B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/073,582 US8828874B2 (en) 2011-03-28 2011-03-28 Chemical mechanical polishing of group III-nitride surfaces
US13/073,582 2011-03-28
PCT/US2012/030944 WO2012135342A1 (en) 2011-03-28 2012-03-28 Chemical mechanical polishing of group iii-nitride surfaces

Publications (2)

Publication Number Publication Date
KR20130133899A KR20130133899A (ko) 2013-12-09
KR101608932B1 true KR101608932B1 (ko) 2016-04-04

Family

ID=45953264

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137028408A Active KR101608932B1 (ko) 2011-03-28 2012-03-28 3족 질화물 함유 표면의 화학적 기계적 연마방법

Country Status (4)

Country Link
US (1) US8828874B2 (https=)
JP (1) JP6087900B2 (https=)
KR (1) KR101608932B1 (https=)
WO (1) WO2012135342A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9318339B2 (en) * 2011-10-13 2016-04-19 Mitsui Mining & Smelting, Ltd Polishing slurry and polishing method
US20150099361A1 (en) * 2012-05-07 2015-04-09 Basf Se Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a compound containing an n-heterocycle
US9259818B2 (en) * 2012-11-06 2016-02-16 Sinmat, Inc. Smooth diamond surfaces and CMP method for forming
US8920667B2 (en) * 2013-01-30 2014-12-30 Cabot Microelectronics Corporation Chemical-mechanical polishing composition containing zirconia and metal oxidizer
JP6130316B2 (ja) * 2014-03-11 2017-05-17 信越化学工業株式会社 研磨組成物及び研磨方法並びに研磨組成物の製造方法
US9567492B2 (en) * 2014-08-28 2017-02-14 Sinmat, Inc. Polishing of hard substrates with soft-core composite particles
WO2016115096A1 (en) * 2015-01-12 2016-07-21 Air Products And Chemicals, Inc. Composite abrasive particles for chemical mechanical planarization composition and method of use thereof
CN109715751A (zh) * 2016-09-23 2019-05-03 圣戈本陶瓷及塑料股份有限公司 化学机械平坦化浆料及其形成方法
US11078380B2 (en) 2017-07-10 2021-08-03 Entegris, Inc. Hard abrasive particle-free polishing of hard materials
JP6780800B1 (ja) * 2020-04-09 2020-11-04 信越半導体株式会社 ウェーハの研磨方法及び研磨装置
JP7165858B2 (ja) 2020-06-30 2022-11-07 日亜化学工業株式会社 発光素子の製造方法
KR20230160334A (ko) * 2021-03-29 2023-11-23 엔테그리스, 아이엔씨. 화학적 기계적 평탄화(cmp)를 위한 현탁액 및 이를 사용하는 방법
US20220332977A1 (en) * 2021-04-16 2022-10-20 Entegris, Inc. Cmp compositions for polishing dielectric materials
TWI873902B (zh) * 2022-10-11 2025-02-21 美商Ｃｍｃ材料有限責任公司 用於高度摻雜硼之矽膜之化學機械拋光組合物
CN119371896B (zh) * 2024-10-21 2025-06-27 镇江瑞斯普新材料科技有限公司 一种耐磨型复合抛光粉及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008068390A (ja) * 2006-09-15 2008-03-27 Noritake Co Ltd 結晶材料の研磨加工方法
US20090317638A1 (en) 2007-02-20 2009-12-24 Sumitomo Electric Industries, Ltd. Polishing slurry, method for manufacturing the polishing slurry, nitride crystalline material and method for plishing surface of the nitride crystalline material

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000080352A (ja) 1998-06-11 2000-03-21 Allied Signal Inc 低誘電率材料用研磨用スラリ―としての水系金属酸化物ゾル
JP4028163B2 (ja) 1999-11-16 2007-12-26 株式会社デンソー メカノケミカル研磨方法及びメカノケミカル研磨装置
JP4345746B2 (ja) * 1999-11-16 2009-10-14 株式会社デンソー メカノケミカル研磨装置
US6866793B2 (en) 2002-09-26 2005-03-15 University Of Florida Research Foundation, Inc. High selectivity and high planarity dielectric polishing
US7221037B2 (en) 2003-01-20 2007-05-22 Matsushita Electric Industrial Co., Ltd. Method of manufacturing group III nitride substrate and semiconductor device
US7176115B2 (en) 2003-03-20 2007-02-13 Matsushita Electric Industrial Co., Ltd. Method of manufacturing Group III nitride substrate and semiconductor device
JP2006100570A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法
JP4792802B2 (ja) * 2005-04-26 2011-10-12 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の表面処理方法
US8283694B2 (en) * 2006-10-19 2012-10-09 Sumitomo Electric Industries, Ltd. GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device
CA2700408A1 (en) 2007-10-05 2009-04-09 Saint-Gobain Ceramics & Plastics, Inc. Improved silicon carbide particles, methods of fabrication, and methods using same
DE102007047737A1 (de) * 2007-10-05 2009-04-30 Merck Patent Gmbh Piperidin- und Piperazinderivate
JP2009272380A (ja) 2008-05-01 2009-11-19 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶およびその表面処理方法、ｉｉｉ族窒化物積層体およびその製造方法、ならびにｉｉｉ族窒化物半導体デバイスおよびその製造方法
JP4333820B1 (ja) * 2009-01-19 2009-09-16 住友電気工業株式会社 化合物半導体基板
US9368367B2 (en) 2009-04-13 2016-06-14 Sinmat, Inc. Chemical mechanical polishing of silicon carbide comprising surfaces

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008068390A (ja) * 2006-09-15 2008-03-27 Noritake Co Ltd 結晶材料の研磨加工方法
US20090317638A1 (en) 2007-02-20 2009-12-24 Sumitomo Electric Industries, Ltd. Polishing slurry, method for manufacturing the polishing slurry, nitride crystalline material and method for plishing surface of the nitride crystalline material

Also Published As

Publication number Publication date
JP2014522098A (ja) 2014-08-28
US8828874B2 (en) 2014-09-09
WO2012135342A1 (en) 2012-10-04
KR20130133899A (ko) 2013-12-09
JP6087900B2 (ja) 2017-03-01
US20120252213A1 (en) 2012-10-04

Similar Documents

Publication Publication Date Title
KR101608932B1 (ko) 3족 질화물 함유 표면의 화학적 기계적 연마방법
KR101307267B1 (ko) 실리콘 카바이드 함유 표면의 화학적 기계적 연마 방법
TWI861353B (zh) 用於研磨硬質材料之化學機械研磨(cmp)組合物
EP2255379B1 (en) Silicon carbide polishing method utilizing water-soluble oxidizers
AU2008308580B2 (en) Improved silicon carbide particles, methods of fabrication, and methods using same
JP5986146B2 (ja) 基板を化学機械的に研磨加工する方法
KR102662567B1 (ko) 텅스텐 cmp용 조성물
TWI597356B (zh) 於鎢化學機械硏磨降低淺盤效應
TWI577788B (zh) 用於降低腐蝕的化學機械拋光漿料及其使用方法
US20160060488A1 (en) Polishing of hard substrates with soft-core composite particles
WO2002057382A2 (en) A cmp polishing pad including a solid catalyst
KR20220065087A (ko) 경질 재료의 경질 연마 입자를 포함하지 않는 연마 방법
KR20160009644A (ko) 적어도 하나의 iii-v 재료를 포함하는 물질 또는 층을 연마하기 위한 cmp 조성물의 용도
KR20160121229A (ko) 금속-치환 연마입자, 그의 제조방법 및 금속-치환 연마입자를 포함하는 연마 슬러리 조성물
KR20150008442A (ko) 반도체 소자의 제조 방법
TWI646182B (zh) Metal film polishing slurry composition and method for reducing scratches generated when metal film is polished
JP7361204B2 (ja) 材料除去作業を行うための流体組成物及び方法
KR101693237B1 (ko) 텅스텐 연마용 슬러리 조성물
KR101279968B1 (ko) Ｃｍｐ 슬러리 조성물
HK1022661B (en) A composition and slurry useful for metal cmp
HK1022661A1 (en) A composition and slurry useful for metal cmp

Legal Events

Date Code Title Description
A201 Request for examination
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20200205

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000