KR101608932B1 - 3족 질화물 함유 표면의 화학적 기계적 연마방법 - Google Patents

3족 질화물 함유 표면의 화학적 기계적 연마방법 Download PDF

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KR101608932B1
KR101608932B1 KR1020137028408A KR20137028408A KR101608932B1 KR 101608932 B1 KR101608932 B1 KR 101608932B1 KR 1020137028408 A KR1020137028408 A KR 1020137028408A KR 20137028408 A KR20137028408 A KR 20137028408A KR 101608932 B1 KR101608932 B1 KR 101608932B1
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group iii
iii nitride
particles
soft
containing surface
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KR20130133899A (ko
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라지브 케이. 싱하
아룰 차카라바티 아르주난
디피카 싱하
아부다야 미쉬라
Original Assignee
신메트, 잉크
유니버시티 오브 플로리다 리서치 파운데이션, 인크.
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Assigned to 엔테그리스, 아이엔씨. reassignment 엔테그리스, 아이엔씨. 권리지분의 전부이전등록 Assignors: 신메트, 잉크
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020137028408A 2011-03-28 2012-03-28 3족 질화물 함유 표면의 화학적 기계적 연마방법 Active KR101608932B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/073,582 2011-03-28
US13/073,582 US8828874B2 (en) 2011-03-28 2011-03-28 Chemical mechanical polishing of group III-nitride surfaces
PCT/US2012/030944 WO2012135342A1 (en) 2011-03-28 2012-03-28 Chemical mechanical polishing of group iii-nitride surfaces

Publications (2)

Publication Number Publication Date
KR20130133899A KR20130133899A (ko) 2013-12-09
KR101608932B1 true KR101608932B1 (ko) 2016-04-04

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KR1020137028408A Active KR101608932B1 (ko) 2011-03-28 2012-03-28 3족 질화물 함유 표면의 화학적 기계적 연마방법

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Country Link
US (1) US8828874B2 (enExample)
JP (1) JP6087900B2 (enExample)
KR (1) KR101608932B1 (enExample)
WO (1) WO2012135342A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9318339B2 (en) * 2011-10-13 2016-04-19 Mitsui Mining & Smelting, Ltd Polishing slurry and polishing method
CN104541361A (zh) * 2012-05-07 2015-04-22 巴斯夫欧洲公司 制造半导体装置的方法
US9259818B2 (en) * 2012-11-06 2016-02-16 Sinmat, Inc. Smooth diamond surfaces and CMP method for forming
US8920667B2 (en) 2013-01-30 2014-12-30 Cabot Microelectronics Corporation Chemical-mechanical polishing composition containing zirconia and metal oxidizer
JP6130316B2 (ja) * 2014-03-11 2017-05-17 信越化学工業株式会社 研磨組成物及び研磨方法並びに研磨組成物の製造方法
US9567492B2 (en) * 2014-08-28 2017-02-14 Sinmat, Inc. Polishing of hard substrates with soft-core composite particles
CN107109136A (zh) * 2015-01-12 2017-08-29 弗萨姆材料美国有限责任公司 用于化学机械平面化组合物的复合磨料颗粒及其使用方法
EP3516002B1 (en) * 2016-09-23 2022-01-05 Saint-Gobain Ceramics & Plastics, Inc. Chemical mechanical planarization slurry and method for forming same
US11078380B2 (en) 2017-07-10 2021-08-03 Entegris, Inc. Hard abrasive particle-free polishing of hard materials
JP6780800B1 (ja) * 2020-04-09 2020-11-04 信越半導体株式会社 ウェーハの研磨方法及び研磨装置
JP7165858B2 (ja) 2020-06-30 2022-11-07 日亜化学工業株式会社 発光素子の製造方法
KR20230160334A (ko) * 2021-03-29 2023-11-23 엔테그리스, 아이엔씨. 화학적 기계적 평탄화(cmp)를 위한 현탁액 및 이를 사용하는 방법
US20220332977A1 (en) * 2021-04-16 2022-10-20 Entegris, Inc. Cmp compositions for polishing dielectric materials
TWI873902B (zh) * 2022-10-11 2025-02-21 美商Ｃｍｃ材料有限責任公司 用於高度摻雜硼之矽膜之化學機械拋光組合物
CN119371896B (zh) * 2024-10-21 2025-06-27 镇江瑞斯普新材料科技有限公司 一种耐磨型复合抛光粉及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008068390A (ja) * 2006-09-15 2008-03-27 Noritake Co Ltd 結晶材料の研磨加工方法
US20090317638A1 (en) 2007-02-20 2009-12-24 Sumitomo Electric Industries, Ltd. Polishing slurry, method for manufacturing the polishing slurry, nitride crystalline material and method for plishing surface of the nitride crystalline material

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000080352A (ja) 1998-06-11 2000-03-21 Allied Signal Inc 低誘電率材料用研磨用スラリ―としての水系金属酸化物ゾル
JP4345746B2 (ja) * 1999-11-16 2009-10-14 株式会社デンソー メカノケミカル研磨装置
JP4028163B2 (ja) 1999-11-16 2007-12-26 株式会社デンソー メカノケミカル研磨方法及びメカノケミカル研磨装置
US6866793B2 (en) 2002-09-26 2005-03-15 University Of Florida Research Foundation, Inc. High selectivity and high planarity dielectric polishing
US7221037B2 (en) 2003-01-20 2007-05-22 Matsushita Electric Industrial Co., Ltd. Method of manufacturing group III nitride substrate and semiconductor device
US7176115B2 (en) 2003-03-20 2007-02-13 Matsushita Electric Industrial Co., Ltd. Method of manufacturing Group III nitride substrate and semiconductor device
JP2006100570A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法
JP4792802B2 (ja) * 2005-04-26 2011-10-12 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の表面処理方法
US8283694B2 (en) * 2006-10-19 2012-10-09 Sumitomo Electric Industries, Ltd. GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device
EP2215176B1 (en) * 2007-10-05 2016-01-06 Saint-Gobain Ceramics & Plastics, Inc. Improved silicon carbide particles, methods of fabrication, and methods using same
DE102007047737A1 (de) * 2007-10-05 2009-04-30 Merck Patent Gmbh Piperidin- und Piperazinderivate
JP2009272380A (ja) * 2008-05-01 2009-11-19 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶およびその表面処理方法、ｉｉｉ族窒化物積層体およびその製造方法、ならびにｉｉｉ族窒化物半導体デバイスおよびその製造方法
JP4333820B1 (ja) * 2009-01-19 2009-09-16 住友電気工業株式会社 化合物半導体基板
US9368367B2 (en) 2009-04-13 2016-06-14 Sinmat, Inc. Chemical mechanical polishing of silicon carbide comprising surfaces

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008068390A (ja) * 2006-09-15 2008-03-27 Noritake Co Ltd 結晶材料の研磨加工方法
US20090317638A1 (en) 2007-02-20 2009-12-24 Sumitomo Electric Industries, Ltd. Polishing slurry, method for manufacturing the polishing slurry, nitride crystalline material and method for plishing surface of the nitride crystalline material

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Publication number Publication date
JP2014522098A (ja) 2014-08-28
US8828874B2 (en) 2014-09-09
JP6087900B2 (ja) 2017-03-01
WO2012135342A1 (en) 2012-10-04
KR20130133899A (ko) 2013-12-09
US20120252213A1 (en) 2012-10-04

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