KR101597134B1 - 공장 프로그램 상변화 메모리에 대한 전용 인터페이스 - Google Patents

공장 프로그램 상변화 메모리에 대한 전용 인터페이스 Download PDF

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KR101597134B1
KR101597134B1 KR1020100043045A KR20100043045A KR101597134B1 KR 101597134 B1 KR101597134 B1 KR 101597134B1 KR 1020100043045 A KR1020100043045 A KR 1020100043045A KR 20100043045 A KR20100043045 A KR 20100043045A KR 101597134 B1 KR101597134 B1 KR 101597134B1
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memory device
volatile memory
data
pcm
programming
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KR20100122061A (ko
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케리 딘 테드로우
니콜라스 헨드릭슨
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케리 딘 테드로우
니콜라스 헨드릭슨
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1063—Control signal output circuits, e.g. status or busy flags, feedback command signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1045—Read-write mode select circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/109—Control signal input circuits

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
  • Semiconductor Memories (AREA)
KR1020100043045A 2009-05-11 2010-05-07 공장 프로그램 상변화 메모리에 대한 전용 인터페이스 Active KR101597134B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/464,036 US8176232B2 (en) 2009-05-11 2009-05-11 Dedicated interface to factory program phase-change memories
US12/464,036 2009-05-11

Publications (2)

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KR20100122061A KR20100122061A (ko) 2010-11-19
KR101597134B1 true KR101597134B1 (ko) 2016-02-24

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KR1020100043045A Active KR101597134B1 (ko) 2009-05-11 2010-05-07 공장 프로그램 상변화 메모리에 대한 전용 인터페이스

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US (1) US8176232B2 (enExample)
JP (1) JP5410368B2 (enExample)
KR (1) KR101597134B1 (enExample)
CN (1) CN101887751B (enExample)
DE (1) DE102010018762B4 (enExample)
SG (1) SG166730A1 (enExample)

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US8804411B1 (en) 2009-09-11 2014-08-12 Micron Technology, Inc Dual mode clock and data scheme for memory programming
CN102637453B (zh) * 2012-02-17 2015-05-06 北京时代全芯科技有限公司 一种包括串行输入输出接口的相变存储器
US8954824B2 (en) 2012-02-28 2015-02-10 Micron Technology, Inc. Error detection or correction of stored signals after one or more heat events in one or more memory devices
US10440644B2 (en) * 2012-06-29 2019-10-08 Qualcomm Incorporated Methods and apparatus for turbo decoder throttling
US9952879B2 (en) * 2012-08-30 2018-04-24 Microsoft Technology Licensing, Llc Application pre-layout in byte-addressable persistent random access memory
US9003241B2 (en) * 2013-02-01 2015-04-07 Telefonaktiebolaget L M Ericsson (Publ) Reporting errors on serial interfaces to application layers for flexible error handling approach selection
US9824004B2 (en) 2013-10-04 2017-11-21 Micron Technology, Inc. Methods and apparatuses for requesting ready status information from a memory
US10108372B2 (en) 2014-01-27 2018-10-23 Micron Technology, Inc. Methods and apparatuses for executing a plurality of queued tasks in a memory
US9454310B2 (en) 2014-02-14 2016-09-27 Micron Technology, Inc. Command queuing
US11496335B2 (en) * 2020-10-16 2022-11-08 Dominant Technologies (Singapore) Pte Ltd Dynamically addressable daisy-chained serial communication with configurable physical layer interfaces

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US5966723A (en) * 1997-05-16 1999-10-12 Intel Corporation Serial programming mode for non-volatile memory
US7966429B2 (en) * 2007-05-28 2011-06-21 Super Talent Electronics, Inc. Peripheral devices using phase-change memory
US6781525B2 (en) * 2001-10-23 2004-08-24 Lite-On Technology Corporation Shared interface device
US6715041B2 (en) * 2002-01-28 2004-03-30 M-Systems Flash Disk Pioneers Ltd. Non-volatile memory device with multiple ports
KR100478567B1 (ko) * 2002-08-22 2005-03-22 엠디에스테크놀로지 주식회사 경계주사열을 이용한 플래시롬 프로그래밍 방법
US7346784B1 (en) * 2002-08-29 2008-03-18 Xilinx, Inc. Integrated circuit device programming with partial power
US20050093572A1 (en) * 2003-11-03 2005-05-05 Macronix International Co., Ltd. In-circuit configuration architecture with configuration on initialization function for embedded configurable logic array
JP2006018656A (ja) * 2004-07-02 2006-01-19 Sharp Corp マイクロコンピュータシステム、半導体装置、及び、無線タグ
CN100432986C (zh) * 2005-06-17 2008-11-12 艾默生网络能源系统有限公司 快速编程/调试设备
US7761674B2 (en) * 2005-12-30 2010-07-20 Intel Corporation Identifier associated with memory locations for managing memory accesses
US7640424B2 (en) * 2005-10-13 2009-12-29 Sandisk Corporation Initialization of flash storage via an embedded controller
US7778069B2 (en) * 2005-10-17 2010-08-17 Renesas Technology Corp. Semiconductor device and its fabrication method
WO2007141865A1 (ja) * 2006-06-08 2007-12-13 Renesas Technology Corp. 半導体装置及びその製造方法
US7619936B2 (en) * 2006-11-16 2009-11-17 Qimonda North America Corp. System that prevents reduction in data retention
JP4353336B2 (ja) * 2006-12-26 2009-10-28 エルピーダメモリ株式会社 半導体記憶装置及びそのプログラム方法
US7979625B2 (en) * 2007-11-27 2011-07-12 Spansion Llc SPI bank addressing scheme for memory densities above 128Mb
JP2009176147A (ja) * 2008-01-25 2009-08-06 Nec Corp 電子機器および電子機器のメモリアクセス許可判別方法

Also Published As

Publication number Publication date
SG166730A1 (en) 2010-12-29
JP2011018431A (ja) 2011-01-27
CN101887751A (zh) 2010-11-17
CN101887751B (zh) 2014-07-09
US20100287435A1 (en) 2010-11-11
US8176232B2 (en) 2012-05-08
JP5410368B2 (ja) 2014-02-05
DE102010018762A1 (de) 2011-02-03
KR20100122061A (ko) 2010-11-19
DE102010018762B4 (de) 2020-11-05

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