SG166730A1 - Dedicated interface to factory program phase-change memories - Google Patents

Dedicated interface to factory program phase-change memories

Info

Publication number
SG166730A1
SG166730A1 SG201002796-9A SG2010027969A SG166730A1 SG 166730 A1 SG166730 A1 SG 166730A1 SG 2010027969 A SG2010027969 A SG 2010027969A SG 166730 A1 SG166730 A1 SG 166730A1
Authority
SG
Singapore
Prior art keywords
dedicated interface
program phase
change memories
factory program
dedicated
Prior art date
Application number
SG201002796-9A
Other languages
English (en)
Inventor
Kerry Dean Tedrow
Nicholas Hendrickson
Original Assignee
Numonyx Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Numonyx Bv filed Critical Numonyx Bv
Publication of SG166730A1 publication Critical patent/SG166730A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1063—Control signal output circuits, e.g. status or busy flags, feedback command signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1045—Read-write mode select circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/109—Control signal input circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
  • Semiconductor Memories (AREA)
SG201002796-9A 2009-05-11 2010-04-21 Dedicated interface to factory program phase-change memories SG166730A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/464,036 US8176232B2 (en) 2009-05-11 2009-05-11 Dedicated interface to factory program phase-change memories

Publications (1)

Publication Number Publication Date
SG166730A1 true SG166730A1 (en) 2010-12-29

Family

ID=43063091

Family Applications (1)

Application Number Title Priority Date Filing Date
SG201002796-9A SG166730A1 (en) 2009-05-11 2010-04-21 Dedicated interface to factory program phase-change memories

Country Status (6)

Country Link
US (1) US8176232B2 (enExample)
JP (1) JP5410368B2 (enExample)
KR (1) KR101597134B1 (enExample)
CN (1) CN101887751B (enExample)
DE (1) DE102010018762B4 (enExample)
SG (1) SG166730A1 (enExample)

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US8804411B1 (en) 2009-09-11 2014-08-12 Micron Technology, Inc Dual mode clock and data scheme for memory programming
CN102637453B (zh) * 2012-02-17 2015-05-06 北京时代全芯科技有限公司 一种包括串行输入输出接口的相变存储器
US8954824B2 (en) 2012-02-28 2015-02-10 Micron Technology, Inc. Error detection or correction of stored signals after one or more heat events in one or more memory devices
US10440644B2 (en) * 2012-06-29 2019-10-08 Qualcomm Incorporated Methods and apparatus for turbo decoder throttling
US9952879B2 (en) * 2012-08-30 2018-04-24 Microsoft Technology Licensing, Llc Application pre-layout in byte-addressable persistent random access memory
US9003241B2 (en) * 2013-02-01 2015-04-07 Telefonaktiebolaget L M Ericsson (Publ) Reporting errors on serial interfaces to application layers for flexible error handling approach selection
US9824004B2 (en) 2013-10-04 2017-11-21 Micron Technology, Inc. Methods and apparatuses for requesting ready status information from a memory
US10108372B2 (en) 2014-01-27 2018-10-23 Micron Technology, Inc. Methods and apparatuses for executing a plurality of queued tasks in a memory
US9454310B2 (en) 2014-02-14 2016-09-27 Micron Technology, Inc. Command queuing
US11496335B2 (en) * 2020-10-16 2022-11-08 Dominant Technologies (Singapore) Pte Ltd Dynamically addressable daisy-chained serial communication with configurable physical layer interfaces

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US5966723A (en) * 1997-05-16 1999-10-12 Intel Corporation Serial programming mode for non-volatile memory
US7966429B2 (en) * 2007-05-28 2011-06-21 Super Talent Electronics, Inc. Peripheral devices using phase-change memory
US6781525B2 (en) * 2001-10-23 2004-08-24 Lite-On Technology Corporation Shared interface device
US6715041B2 (en) * 2002-01-28 2004-03-30 M-Systems Flash Disk Pioneers Ltd. Non-volatile memory device with multiple ports
KR100478567B1 (ko) * 2002-08-22 2005-03-22 엠디에스테크놀로지 주식회사 경계주사열을 이용한 플래시롬 프로그래밍 방법
US7346784B1 (en) * 2002-08-29 2008-03-18 Xilinx, Inc. Integrated circuit device programming with partial power
US20050093572A1 (en) * 2003-11-03 2005-05-05 Macronix International Co., Ltd. In-circuit configuration architecture with configuration on initialization function for embedded configurable logic array
JP2006018656A (ja) * 2004-07-02 2006-01-19 Sharp Corp マイクロコンピュータシステム、半導体装置、及び、無線タグ
CN100432986C (zh) * 2005-06-17 2008-11-12 艾默生网络能源系统有限公司 快速编程/调试设备
US7761674B2 (en) * 2005-12-30 2010-07-20 Intel Corporation Identifier associated with memory locations for managing memory accesses
US7640424B2 (en) * 2005-10-13 2009-12-29 Sandisk Corporation Initialization of flash storage via an embedded controller
US7778069B2 (en) * 2005-10-17 2010-08-17 Renesas Technology Corp. Semiconductor device and its fabrication method
WO2007141865A1 (ja) * 2006-06-08 2007-12-13 Renesas Technology Corp. 半導体装置及びその製造方法
US7619936B2 (en) * 2006-11-16 2009-11-17 Qimonda North America Corp. System that prevents reduction in data retention
JP4353336B2 (ja) * 2006-12-26 2009-10-28 エルピーダメモリ株式会社 半導体記憶装置及びそのプログラム方法
US7979625B2 (en) * 2007-11-27 2011-07-12 Spansion Llc SPI bank addressing scheme for memory densities above 128Mb
JP2009176147A (ja) * 2008-01-25 2009-08-06 Nec Corp 電子機器および電子機器のメモリアクセス許可判別方法

Also Published As

Publication number Publication date
JP2011018431A (ja) 2011-01-27
KR101597134B1 (ko) 2016-02-24
CN101887751A (zh) 2010-11-17
CN101887751B (zh) 2014-07-09
US20100287435A1 (en) 2010-11-11
US8176232B2 (en) 2012-05-08
JP5410368B2 (ja) 2014-02-05
DE102010018762A1 (de) 2011-02-03
KR20100122061A (ko) 2010-11-19
DE102010018762B4 (de) 2020-11-05

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