KR101582766B1 - Anisotropic conductive film, connection method and connector - Google Patents

Anisotropic conductive film, connection method and connector Download PDF

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Publication number
KR101582766B1
KR101582766B1 KR1020147015790A KR20147015790A KR101582766B1 KR 101582766 B1 KR101582766 B1 KR 101582766B1 KR 1020147015790 A KR1020147015790 A KR 1020147015790A KR 20147015790 A KR20147015790 A KR 20147015790A KR 101582766 B1 KR101582766 B1 KR 101582766B1
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South Korea
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anisotropic conductive
conductive film
light
terminal
fine particles
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KR1020147015790A
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Korean (ko)
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KR20140091055A (en
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요시또 다나까
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데쿠세리아루즈 가부시키가이샤
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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Abstract

본 발명은 기판의 단자와 전자 부품의 단자를 이방성 도전 접속시키는 이방성 도전 필름이며, 도전성 입자 및 광 경화성 수지를 함유하는 도전성 입자 함유층과, 광 경화성 수지를 함유하는 절연성 접착층을 갖고, 상기 도전성 입자 함유층 및 상기 절연성 접착층 중 적어도 어느 하나가, 광 산란성 미립자를 함유하는 이방성 도전 필름이다.The present invention relates to an anisotropic conductive film for anisotropic conductive connection between a terminal of a substrate and a terminal of an electronic component, the conductive film comprising a conductive particle-containing layer containing conductive particles and a photocurable resin, and an insulating adhesive layer containing a photocurable resin, And at least one of the insulating adhesive layers is an anisotropic conductive film containing light scattering fine particles.

Description

이방성 도전 필름, 접속 방법 및 접합체{ANISOTROPIC CONDUCTIVE FILM, CONNECTION METHOD AND CONNECTOR}TECHNICAL FIELD [0001] The present invention relates to an anisotropic conductive film, an anisotropic conductive film,

본 발명은 전자 부품을 전기적이고 기계적으로 접속 가능한 이방성 도전 필름, 및 상기 이방성 도전 필름을 사용한 접속 방법 및 접합체에 관한 것이다.The present invention relates to an anisotropic conductive film capable of electrically and mechanically connecting electronic components, and a connection method and a junction body using the anisotropic conductive film.

종래부터, 전자 부품을 기판과 접속하는 수단으로서, 도전성 입자가 분산된 열 경화성 수지를 박리 필름에 도포한 테이프상의 접속 재료(예를 들면, 이방성 도전 필름(ACF; Anisotropic Conductive Film))가 사용되고 있다.Conventionally, as a means for connecting electronic components to a substrate, a tape-like connecting material (for example, anisotropic conductive film (ACF)) in which a thermosetting resin in which conductive particles are dispersed is applied to a release film is used .

이 이방성 도전 필름은, 예를 들면 플렉시블 프린트 기판(FPC)이나 IC(집적 회로, Integrated Circuit) 칩의 단자와, LCD(액정 디스플레이, Liquid Crystal Display) 패널의 유리 기판 상에 형성된 전극을 접속하는 경우를 비롯하여, 다양한 단자끼리를 접착함과 함께 전기적으로 접속하는 경우에 사용되고 있다.This anisotropic conductive film is used when a terminal of a flexible printed circuit board (FPC) or an IC (integrated circuit) chip and an electrode formed on a glass substrate of an LCD (Liquid Crystal Display) panel are connected And is used for bonding various terminals together and electrically connecting them.

상기 이방성 도전 필름을 사용하여 기판의 단자와 전자 부품의 단자를 전기적으로 접속하는 이방성 도전 접속은, 통상 상기 기판과 상기 전자 부품으로 상기 이방성 도전 필름을 끼워 상기 이방성 도전 필름을 가열 및 가압함으로써 행해진다. 이때의 가열 온도로서는, 예를 들면 170℃ 내지 200℃ 정도이다. 이 열이 기판 및 전자 부품에 영향을 미치는 경우가 있다. 또한, 기판과 전자 부품과의 열 팽창 계수의 차이에 기인하여 접속시에 위치 어긋남이 발생하는 경우가 있다.The anisotropic conductive connection for electrically connecting the terminals of the substrate and the terminals of the electronic component using the anisotropic conductive film is usually performed by heating and pressing the anisotropic conductive film with the anisotropic conductive film sandwiched between the substrate and the electronic component . The heating temperature at this time is, for example, about 170 캜 to 200 캜. This heat may affect the substrate and electronic components. In addition, positional shift may occur at the time of connection due to the difference in thermal expansion coefficient between the substrate and the electronic component.

따라서, 저온에서 기판의 단자와 전자 부품의 단자를 이방성 도전 접속하는 방법으로서, 광을 사용한 접속이 제안되어 있다. 이 접속에서는, 유리 기판 등의 광을 투과하는 기판과, 광 경화성 수지를 함유하는 이방성 도전 필름이 사용된다. 그리고, 상기 기판 너머로 자외선 등의 광이 상기 이방성 도전 필름에 조사되어 이방성 도전 접속이 행해진다. 이 접속에 사용하는 이방성 도전 필름으로서는, 예를 들면 광 양이온 중합성 화합물, 광 양이온 중합 개시제, 광 라디칼 중합성 화합물 및 광 라디칼 중합 개시제를 함유하는 이방성 도전 필름이 제안되어 있다(예를 들면, 특허문헌 1 참조). 그러나, 이 경우, 상기 기판의 단자가 광을 투과하지 않는 단자이면, 상기 단자에 접촉하는 이방성 도전 필름의 부위는, 상기 단자에 의해 광 조사원으로부터의 광이 차단되기 때문에, 충분히 경화할 수 없어, 기판의 단자와 전자 부품의 단자와의 도통 저항이 충분하지 않다는 문제가 있다.Therefore, a connection using light has been proposed as a method of performing anisotropically conductive connection between a terminal of a substrate and a terminal of an electronic part at a low temperature. In this connection, a substrate that transmits light such as a glass substrate and an anisotropic conductive film containing a photocurable resin are used. Then, light such as ultraviolet light is irradiated to the anisotropic conductive film over the substrate to perform anisotropic conductive connection. As the anisotropic conductive film used for this connection, there has been proposed an anisotropic conductive film containing a photo cationic polymerizable compound, a photo cationic polymerization initiator, a photo radical polymerizable compound, and a photo radical polymerization initiator (see, for example, Patent See Document 1). However, in this case, if the terminal of the substrate does not transmit light, the portion of the anisotropic conductive film contacting the terminal can not be sufficiently cured because the light from the light irradiation source is blocked by the terminal, There is a problem that the conduction resistance between the terminal of the substrate and the terminal of the electronic component is not sufficient.

또한, 필름에 입사한 광을 다방향으로 확산시키기 위해서, 광을 산란하는 입자를 필름 중에 함유시키는 기술이 알려져 있지만(예를 들면, 특허문헌 2 및 3 참조), 이 기술을 상기 이방성 도전 필름에 적용해도, 충분한 경화성 및 도통 저항을 얻을 수는 없다.Further, there is known a technique in which particles for scattering light are contained in a film in order to diffuse light incident on the film in many directions (see, for example, Patent Documents 2 and 3), and this technique is applied to the anisotropic conductive film Even when applied, sufficient curability and conduction resistance can not be obtained.

따라서, 광을 사용한 이방성 도전 접속에 있어서, 광을 투과하지 않는 단자를 기판의 단자로서 사용한 경우에서도, 우수한 경화성, 및 우수한 도통 저항을 얻을 수 있는 이방성 도전 필름, 및 해당 이방성 도전 필름을 사용한 접속 방법 및 접합체의 제공이 요구되고 있는 것이 현 상황이다.Therefore, in anisotropic conductive connection using light, an anisotropic conductive film that can obtain excellent curing property and excellent conduction resistance even when a terminal that does not transmit light is used as a terminal of a substrate, and a connection method using the anisotropic conductive film And the provision of a bonded body is required.

국제 공개 2000/46315호 팸플릿International Publication 2000/46315 pamphlet 일본 특허 공개 평 10-226773호 공보Japanese Patent Application Laid-Open No. 10-226773 일본 특허 공개 평 9-178910호 공보Japanese Patent Application Laid-Open No. 9-178910

본 발명은 종래에 있어서의 상기 여러 문제를 해결하고, 이하의 목적을 달성하는 것을 과제로 한다. 즉, 본 발명은 광을 사용한 이방성 도전 접속에 있어서, 광을 투과하지 않는 단자를 기판의 단자로서 사용한 경우에도, 우수한 경화성, 및 우수한 도통 저항을 얻을 수 있는 이방성 도전 필름, 및 해당 이방성 도전 필름을 사용한 접속 방법 및 접합체를 제공하는 것을 목적으로 한다.SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems and to achieve the following objects. That is, the present invention relates to an anisotropic conductive film which can obtain excellent curability and excellent conduction resistance even when a terminal that does not transmit light is used as a terminal of a substrate in anisotropic conductive connection using light, And an object of the present invention is to provide a connection method and a connection body used.

상기 과제의 해결 수단으로서는, 이하와 같다. 즉,Means for solving the above problems are as follows. In other words,

<1> 기판의 단자와 전자 부품의 단자를 이방성 도전 접속시키는 이방성 도전 필름이며,&Lt; 1 > An anisotropic conductive film for anisotropic conductive connection of a terminal of a substrate and a terminal of an electronic component,

도전성 입자 및 광 경화성 수지를 함유하는 도전성 입자 함유층과, 광 경화성 수지를 함유하는 절연성 접착층을 갖고,A conductive particle-containing layer containing conductive particles and a photocurable resin, and an insulating adhesive layer containing a photocurable resin,

상기 도전성 입자 함유층 및 상기 절연성 접착층 중 적어도 어느 하나가, 광 산란성 미립자를 함유하는 것을 특징으로 하는 이방성 도전 필름이다.Wherein at least one of the conductive particle containing layer and the insulating adhesive layer contains light scattering fine particles.

<2> 도전성 입자 함유층 및 절연성 접착층 중, 상기 절연성 접착층만이 광 산란성 미립자를 함유하는 상기 <1>에 기재된 이방성 도전 필름이다.<2> The anisotropic conductive film according to <1>, wherein only the insulating adhesive layer contains light-scattering fine particles among the conductive particle-containing layer and the insulating adhesive layer.

<3> 광 산란성 미립자의 함유량이 상기 광 산란성 미립자가 함유되는 층 중의 수지에 대하여 0.05질량％ 내지 10.00질량％인 상기 <1> 내지 <2> 중 어느 한 항에 기재된 이방성 도전 필름이다.<3> The anisotropic conductive film according to any one of <1> to <2>, wherein the content of the light-scattering fine particles is 0.05% by mass to 10.00% by mass with respect to the resin in the layer containing the light-scattering fine particles.

<4> 광 산란성 미립자가 산화티타늄인 상기 <1> 내지 <3> 중 어느 한 항에 기재된 이방성 도전 필름이다.<4> The anisotropic conductive film according to any one of <1> to <3>, wherein the light-scattering fine particles are titanium oxide.

<5> 기판의 단자와 전자 부품의 단자를 이방성 도전 접속시키는 접속 방법이며,&Lt; 5 > A connection method for anisotropic conductive connection between a terminal of a substrate and a terminal of an electronic component,

상기 기판의 단자 상에 상기 <1> 내지 <4> 중 어느 한 항에 기재된 이방성 도전 필름을 부착하는 부착 공정과,An adhering step of adhering the anisotropic conductive film described in any one of < 1 > to < 4 > onto a terminal of the substrate;

상기 전자 부품이 적재된 상기 이방성 도전 필름에 대하여 상기 기판측으로부터 광을 조사하는 광 조사 공정을 포함하는 것을 특징으로 하는 접속 방법이다.And a light irradiation step of irradiating light from the substrate side to the anisotropic conductive film on which the electronic component is mounted.

<6> 상기 <5>에 기재된 접속 방법에 의해 얻어지는 것을 특징으로 하는 접합체이다.<6> A bonded body obtained by the connection method described in <5> above.

본 발명에 따르면, 종래에 있어서의 상기 여러 문제를 해결하고, 상기 목적을 달성할 수 있고, 광을 사용한 이방성 도전 접속에 있어서, 광을 투과하지 않는 단자를 기판의 단자로서 사용한 경우에도, 우수한 경화성, 및 우수한 도통 저항을 얻을 수 있는 이방성 도전 필름, 및 해당 이방성 도전 필름을 사용한 접속 방법, 및 접합체를 제공할 수 있다.According to the present invention, it is possible to solve the above-mentioned conventional problems and attain the above object, and even in the case of using an anisotropic conductive connection using light as a terminal of the substrate which does not transmit light, , And an anisotropic conductive film capable of obtaining excellent conduction resistance, a connection method using the anisotropic conductive film, and a junction body can be provided.

도 1은 본 발명의 이방성 도전 필름의 일례의 개략 단면도이다.
도 2는 본 발명의 이방성 도전 필름의 일례의 개략 단면도이다.
도 3은 본 발명의 이방성 도전 필름의 일례의 개략 단면도이다.
도 4a는 본 발명의 접속 방법을 설명하기 위한 개략도(그의 1)이다.
도 4b는 본 발명의 접속 방법을 설명하기 위한 개략도(그의 2)이다.
도 4c는 본 발명의 접속 방법을 설명하기 위한 개략도(그의 3)이다.1 is a schematic sectional view of an example of an anisotropic conductive film of the present invention.
2 is a schematic sectional view of an example of the anisotropic conductive film of the present invention.
3 is a schematic sectional view of an example of the anisotropic conductive film of the present invention.
4A is a schematic view (1) for explaining a connection method of the present invention.
4B is a schematic view (No. 2) for explaining the connection method of the present invention.
4C is a schematic view (No. 3) for explaining the connection method of the present invention.

(이방성 도전 필름)(Anisotropic conductive film)

본 발명의 이방성 도전 필름은, 기판의 단자와 전자 부품의 단자를 이방성 도전 접속시키는 이방성 도전 필름이며, 도전성 입자 함유층과, 절연성 접착층을 적어도 갖고, 또한 필요에 따라, 그 밖의 층을 갖는다.The anisotropic conductive film of the present invention is an anisotropic conductive film that anisotropically conductively connects the terminals of the board and the terminals of the electronic component, and has at least the conductive particle containing layer and the insulating adhesive layer, and if necessary, other layers.

상기 도전성 입자 함유층 및 상기 절연성 접착층 중 적어도 어느 하나는, 광 산란성 미립자를 함유한다.At least one of the conductive particle-containing layer and the insulating adhesive layer contains light-scattering fine particles.

<광 산란성 미립자>&Lt; Light scattering fine particles &

상기 광 산란성 미립자로서는, 상기 도전성 입자 함유층 및 상기 절연성 접착층을 경화시키는 광을 산란시키는 미립자라면, 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 금속 산화물 등을 들 수 있다.The light-scattering fine particles are not particularly limited as long as they are fine particles that scatter light for curing the conductive particle-containing layer and the insulating adhesive layer, and can be appropriately selected according to the purpose, and examples thereof include metal oxides.

상기 금속 산화물로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 산화티타늄, 산화아연 등을 들 수 있다. 이들 중에서도, 상기 도전성 입자 함유층 및 상기 절연성 접착층에 있어서 광 산란성이 우수한 점에서, 산화티타늄이 바람직하다.The metal oxide is not particularly limited and can be appropriately selected according to the purpose. Examples thereof include titanium oxide and zinc oxide. Of these, titanium oxide is preferable in that the conductive particle-containing layer and the insulating adhesive layer have excellent light scattering properties.

상기 산화티타늄은 아나타제형, 루틸형, 브루카이트형 중 어느 것일 수도 있지만, 루틸형인 것이 광 산란의 점에서 바람직하다.The titanium oxide may be any of anatase type, rutile type and brookite type, but it is preferably rutile type in view of light scattering.

상기 도전성 입자 함유층 및 상기 절연성 접착층을 경화시키는 광으로서는, 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있지만, 자외선이 바람직하다.The light for curing the conductive particle-containing layer and the insulating adhesive layer is not particularly limited and may be appropriately selected according to the purpose, but ultraviolet rays are preferable.

상기 광 산란성 미립자의 평균 입경으로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있지만, 10nm 내지 5,000nm가 바람직하고, 20nm 내지 1,000nm가 보다 바람직하고, 100nm 내지 800nm가 특히 바람직하다. 상기 평균 입경이 10nm 미만이면, UV광을 흡수하는 경우가 있고, 5,000nm를 초과하면, 광 산란하기 어려운 경우가 있다. 상기 평균 입경이 상기 특히 바람직한 범위 내이면, 광 산란 효율의 점에서 유리하다.The average particle diameter of the light-scattering fine particles is not particularly limited and may be appropriately selected according to the purpose. The average particle diameter is preferably 10 nm to 5,000 nm, more preferably 20 nm to 1,000 nm, and particularly preferably 100 nm to 800 nm. When the average particle diameter is less than 10 nm, UV light may be absorbed. When the average particle diameter exceeds 5,000 nm, light scattering may be difficult. When the average particle diameter is within the particularly preferable range, it is advantageous in light scattering efficiency.

상기 평균 입경은, 예를 들면 입도 분포 측정 장치(FPAR-1000, 오츠카 덴시 가부시끼가이샤 제조) 등에 의해 측정할 수 있다.The average particle diameter can be measured by, for example, a particle size distribution measuring apparatus (FPAR-1000, manufactured by Otsuka Denshi Kabushiki Kaisha).

상기 광 산란성 미립자는, 상기 도전성 입자 함유층 및 상기 절연성 접착층 중, 상기 절연성 접착층에만 함유되어 있는 것이 도통 저항, 압흔 및 경화성의 점에서 바람직하다.It is preferable that the light-scattering fine particles are contained only in the insulating adhesive layer among the conductive particle-containing layer and the insulating adhesive layer in terms of conduction resistance, indentation, and curability.

상기 광 산란성 미립자의 함유량으로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있지만, 상기 광 산란성 미립자가 함유되는 층 중의 수지에 대하여 0.01질량％ 내지 15.00질량％가 바람직하고, 0.05질량％ 내지 10.00 질량％가 보다 바람직하다.The content of the light-scattering fine particles is not particularly limited and may be appropriately selected according to the purpose. The content of the light-scattering fine particles is preferably 0.01% by mass to 15.00% by mass, more preferably 0.05% by mass to 10.00% Is more preferable.

여기서, 상기 층 중의 수지이란, 막 형성 수지, 광 경화성 수지, 및 경화제, 및 이들의 경화물 등의 층을 형성하는 수지를 가리킨다.Here, the resin in the layer refers to a resin that forms a film-forming resin, a photo-curable resin, a curing agent, and a cured product thereof.

<도전성 입자 함유층><Conductive Particle Containing Layer>

상기 도전성 입자 함유층은, 도전성 입자 및 광 경화성 수지를 적어도 함유하고, 또한 필요에 따라, 그 밖의 성분을 함유한다.The conductive particle-containing layer contains at least conductive particles and a photo-curable resin and, if necessary, other components.

상기 도전성 입자 함유층은, 상기 광 산란성 미립자를 함유하고 있을 수도 있다.The conductive particle-containing layer may contain the light-scattering fine particles.

-도전성 입자-- conductive particles -

상기 도전성 입자로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 금속 입자, 금속 피복 수지 입자 등을 들 수 있다.The conductive particles are not particularly limited and may be appropriately selected in accordance with the purpose, and examples thereof include metal particles and metal-coated resin particles.

상기 금속 입자로서는, 예를 들면 니켈, 코발트, 은, 구리, 금, 팔라듐 등을 들 수 있다. 이들은 1종 단독으로 사용할 수도 있고, 2종 이상을 병용할 수도 있다. 이들 중에서도, 니켈, 은, 구리가 바람직하다. 이들의 표면 산화를 방지하는 목적에서, 이들의 표면에 금, 팔라듐을 실시한 입자를 사용할 수도 있다. 또한, 이들의 표면에 금속 돌기나 유기물로 절연 피막을 실시한 것을 사용할 수도 있다.Examples of the metal particles include nickel, cobalt, silver, copper, gold, and palladium. These may be used alone, or two or more of them may be used in combination. Of these, nickel, silver and copper are preferable. For the purpose of preventing their surface oxidation, gold or palladium-coated particles may be used for these surfaces. It is also possible to use those obtained by applying an insulating coating to the surface of these with metal protrusions or organic materials.

상기 금속 피복 수지 입자로서는, 예를 들면 수지 코어의 표면을 니켈, 구리, 금 및 팔라듐 중 어느 하나의 금속으로 피복한 입자 등을 들 수 있다. 또한, 상기 수지 코어의 표면에 금속 돌기나 유기물로 절연 피막을 실시한 것을 사용할 수도 있다.Examples of the metal-coated resin particles include particles obtained by coating the surface of the resin core with one of nickel, copper, gold and palladium. The surface of the resin core may be coated with a metal protrusion or an organic coating.

상기 수지 코어에의 금속의 피복 방법으로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 무전해 도금법, 스퍼터링법 등을 들 수 있다.The method of coating the metal on the resin core is not particularly limited and can be appropriately selected according to the purpose, and examples thereof include electroless plating and sputtering.

상기 수지 코어의 재료로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 스티렌-디비닐벤젠 공중합체, 벤조구아나민 수지, 가교 폴리스티렌 수지, 아크릴 수지, 스티렌-실리카 복합 수지 등을 들 수 있다.The material of the resin core is not particularly limited and may be appropriately selected according to the purpose. Examples of the material include a styrene-divinylbenzene copolymer, a benzoguanamine resin, a crosslinked polystyrene resin, an acrylic resin, a styrene- .

상기 도전성 입자 함유층에 있어서의 상기 도전성 입자의 함유량으로서는, 특별히 제한은 없고, 회로 부재의 배선 피치나, 접속 면적 등에 의해 적절히 조정할 수 있다.The content of the conductive particles in the conductive particle-containing layer is not particularly limited and can be appropriately adjusted by the wiring pitch of the circuit member, the connection area, and the like.

-광 경화성 수지-- Photocurable resin -

상기 광 경화성 수지로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 광 라디칼 경화성 수지, 광 양이온 경화성 수지 등을 들 수 있다.The photocurable resin is not particularly limited and may be appropriately selected in accordance with the purpose. Examples thereof include a photo-radical-curable resin and a photo-cation-curable resin.

상기 도전성 입자 함유층에 있어서의 상기 광 경화성 수지의 함유량으로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있다.The content of the photocurable resin in the conductive particle-containing layer is not particularly limited and may be appropriately selected depending on the purpose.

--광 라디칼 경화성 수지--- Light Radical Curable Resin -

상기 광 라디칼 경화성 수지로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 메틸아크릴레이트, 에틸아크릴레이트, 이소프로필 아크릴레이트, 이소부틸아크릴레이트, 에틸렌글리콜디아크릴레이트, 디에틸렌글리콜디아크릴레이트, 트리메틸올프로판트리아크릴레이트, 디메틸올트리시클로데칸디아크릴레이트, 테트라메틸렌글리콜테트라아크릴레이트, 2-히드록시-1,3-디아크릴옥시프로판, 2,2-비스[4-(아크릴옥시메톡시)페닐]프로판, 2,2-비스[4-(아크릴옥시에톡시)페닐]프로판, 디시클로펜테닐아크릴레이트, 트리시클로데카닐아크릴레이트, 트리스(아크릴옥시에틸)이소시아누레이트, 에폭시아크릴레이트, 우레탄아크릴레이트, 아크릴레이트 올리고머 등을 들 수 있다. 이들은 1종 단독으로 사용할 수도 있고, 2종 이상을 병용할 수도 있다.The photo-radical-curable resin is not particularly limited and may be appropriately selected according to the purpose. Examples of the photo-radical curable resin include methyl acrylate, ethyl acrylate, isopropyl acrylate, isobutyl acrylate, ethylene glycol diacrylate, diethylene glycol di Acrylate, trimethylolpropane triacrylate, dimethylol tricyclodecane diacrylate, tetramethylene glycol tetraacrylate, 2-hydroxy-1,3-diacryloxypropane, 2,2-bis [4- (Acryloxyethoxy) phenyl] propane, dicyclopentenyl acrylate, tricyclodecanyl acrylate, tris (acryloxyethyl) isocyanurate , Epoxy acrylate, urethane acrylate, acrylate oligomer and the like. These may be used alone, or two or more of them may be used in combination.

또한, 상기 광 라디칼 경화성 수지로서는, 상기 아크릴레이트를 메타크릴레이트로 한 것을 들 수 있다.As the photo-radical-curable resin, there may be mentioned methacrylate as the acrylate.

이들은 1종 단독으로 사용할 수도 있고, 2종 이상을 병용할 수도 있다.These may be used alone, or two or more of them may be used in combination.

--광 양이온 경화성 수지--- Photocation Curable Resin -

상기 광 양이온 경화성 수지로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 비스페놀 A형 에폭시 수지, 비스페놀 F형 에폭시 수지, 노볼락형 에폭시 수지, 옥세탄 수지, 지환식 에폭시 수지 및 이들의 변성 에폭시 수지 등을 들 수 있다. 이들은 1종 단독으로 사용할 수도 있고, 2종 이상을 병용할 수도 있다.The photo cationic curable resin is not particularly limited and may be appropriately selected according to the purpose. Examples thereof include bisphenol A type epoxy resin, bisphenol F type epoxy resin, novolak type epoxy resin, oxetane resin, Modified epoxy resin, and the like. These may be used alone, or two or more of them may be used in combination.

또한, 광 라디칼 경화성 수지, 광 양이온 경화성 수지를 혼합 등 하여, 병용할 수도 있다.Further, a photo-radical curable resin and a photo cationic curable resin may be mixed and used together.

--그 밖의 성분--- Other ingredients -

상기 그 밖의 성분으로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 막 형성 수지, 경화제, 실란 커플링제 등을 들 수 있다.The other components are not particularly limited and can be appropriately selected according to the purpose, and examples thereof include a film forming resin, a curing agent, and a silane coupling agent.

--막 형성 수지--- film forming resin -

상기 막 형성 수지로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 페녹시 수지, 불포화 폴리에스테르 수지, 포화 폴리에스테르 수지, 우레탄 수지, 부타디엔 수지, 폴리이미드 수지, 폴리아미드 수지, 폴리올레핀 수지 등을 들 수 있다. 상기 막 형성 수지는 1종 단독으로 사용할 수도 있고, 2종 이상을 병용할 수도 있다. 이들 중에서도, 제막성, 가공성, 접속 신뢰성의 점에서 페녹시 수지가 특히 바람직하다.The film-forming resin is not particularly limited and may be appropriately selected according to the purpose. Examples thereof include phenoxy resin, unsaturated polyester resin, saturated polyester resin, urethane resin, butadiene resin, polyimide resin, polyamide resin, Resins and the like. These film-forming resins may be used alone or in combination of two or more. Of these, phenoxy resins are particularly preferable from the viewpoints of film formability, workability, and connection reliability.

상기 페녹시 수지란, 비스페놀 A와 에피클로로히드린으로부터 합성되는 수지이며, 적절히 합성한 것을 사용할 수도 있고, 시판품을 사용할 수도 있다.The phenoxy resin is a resin synthesized from bisphenol A and epichlorohydrin, and a properly synthesized resin may be used, or a commercially available product may be used.

상기 도전성 입자 함유층에 있어서의 상기 막 형성 수지의 함유량으로서는, 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있다.The content of the film-forming resin in the conductive particle-containing layer is not particularly limited and may be appropriately selected depending on the purpose.

--경화제--- hardener -

상기 경화제로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 파장 영역 200nm 내지 750nm의 광에 의해 활성의 양이온종 또는 라디칼종을 발생시키는 경화제 등을 들 수 있다.The curing agent is not particularly limited and can be appropriately selected according to the purpose, and examples thereof include a curing agent which generates active cationic species or radical species by light having a wavelength of 200 nm to 750 nm.

양이온종을 발생시키는 광 양이온 경화제로서는, 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 술포늄염, 오늄염 등을 들 수 있고, 다양한 에폭시 수지를 양호하게 경화시킬 수 있다.The cationic cationic curing agent for generating cationic species is not particularly limited and can be appropriately selected in accordance with the purpose. Examples thereof include sulfonium salts and onium salts, and various epoxy resins can be cured well.

라디칼종을 발생시키는 광 라디칼 경화제로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 알킬페논계 광 중합 개시제, 아실포스핀옥시드계 광 중합 개시제, 티타노센계 광 중합 개시제, 옥심에스테르계 광 중합 개시제 등을 들 수 있고, 다양한 아크릴레이트를 양호하게 경화시킬 수 있다.The photo-radical curing agent for generating a radical species is not particularly limited and may be appropriately selected according to the purpose. Examples thereof include alkylphenon-based photo polymerization initiators, acylphosphine oxide-based photo polymerization initiators, titanocene-based photopolymerization initiators, A photopolymerization initiator, and the like, and various acrylates can be cured well.

또한, 상기 파장 영역 200nm 내지 750nm의 광에 의해 활성의 양이온종 또는 라디칼종을 발생시키는 경화제로서는, 예를 들면 광 라디칼 경화제(상품명: 이르가큐어 651, 바스프(BASF)사 제조), 광 양이온 경화제(상품명: 이르가큐어 369, 바스프사 제조) 등을 들 수 있다.Examples of the curing agent that generates active cation species or radical species by the light of the wavelength range of 200 nm to 750 nm include a photo radical curing agent (trade name: Irgacure 651, BASF), a photo cationic curing agent (Trade name: Irgacure 369, BASF).

또한, 광 라디칼 경화제, 광 양이온 경화제를 혼합 등 하여, 병용할 수도 있다.It is also possible to use a combination of a photo-radical curing agent and a photo cationic curing agent in combination.

상기 도전성 입자 함유층에 있어서의 상기 경화제의 함유량으로서는, 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있다.The content of the curing agent in the conductive particle-containing layer is not particularly limited and may be appropriately selected depending on the purpose.

--실란 커플링제--- Silane coupling agent -

상기 실란 커플링제로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 에폭시계 실란 커플링제, 아크릴계 실란 커플링제, 티올계 실란 커플링제, 아민계 실란 커플링제 등을 들 수 있다.The silane coupling agent is not particularly limited and may be appropriately selected according to the purpose, and examples thereof include an epoxy silane coupling agent, an acrylic silane coupling agent, a thiol silane coupling agent, and an amine silane coupling agent.

상기 도전성 입자 함유층에 있어서의 상기 실란 커플링제의 함유량으로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있다.The content of the silane coupling agent in the conductive particle-containing layer is not particularly limited and may be appropriately selected depending on the purpose.

상기 도전성 입자 함유층의 평균 두께로서는 특별히 제한은 없고, 상기 도전성 입자의 평균 입경, 상기 절연성 접착층의 두께와의 관계에서 적절히 선택할 수 있지만, 1㎛ 내지 10㎛가 바람직하고, 4㎛ 내지 8㎛가 보다 바람직하고, 5㎛ 내지 7㎛가 특히 바람직하다. 상기 평균 두께가 1㎛ 미만이면, 기판의 단자와 전자 부품의 단자 사이에 도전성 입자가 충분히 충전되지 않는 경우가 있고, 10㎛를 초과하면, 접속 불량의 원인이 되는 경우가 있다.The average thickness of the conductive particle-containing layer is not particularly limited and may be appropriately selected in relation to the average particle diameter of the conductive particles and the thickness of the insulating adhesive layer. However, it is preferably 1 탆 to 10 탆, more preferably 4 탆 to 8 탆 And particularly preferably from 5 탆 to 7 탆. If the average thickness is less than 1 mu m, the conductive particles may not be sufficiently filled between the terminals of the substrate and the terminals of the electronic component. If the average thickness is more than 10 mu m, connection failure may occur.

여기서, 상기 평균 두께는 임의로 상기 도전성 입자 함유층의 5군데의 두께를 측정했을 때의 평균값이다.Here, the average thickness is an average value when the thickness of each of the five conductive particle-containing layers is arbitrarily measured.

<절연성 접착층><Insulating Adhesive Layer>

상기 절연성 접착층은 광 경화성 수지를 적어도 함유하고, 또한 필요에 따라서, 그 밖의 성분을 함유한다.The insulating adhesive layer contains at least a photocurable resin and, if necessary, other components.

상기 절연성 접착층은 상기 광 산란성 미립자를 함유하는 것이 바람직하다.The insulating adhesive layer preferably contains the light-scattering fine particles.

-광 경화성 수지-- Photocurable resin -

상기 광 경화성 수지로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 상기 도전성 입자 함유층의 설명에 있어서 예시한 상기 광 경화성 수지 등을 들 수 있다.The photocurable resin is not particularly limited and can be appropriately selected in accordance with the purpose. For example, the photocurable resin exemplified in the explanation of the conductive particle-containing layer may be mentioned.

상기 절연성 접착층에 있어서의 상기 광 경화성 수지의 함유량으로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있다.The content of the photocurable resin in the insulating adhesive layer is not particularly limited and may be appropriately selected depending on the purpose.

-그 밖의 성분-- Other ingredients -

상기 그 밖의 성분으로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 막 형성 수지, 경화제, 실란 커플링제 등을 들 수 있다.The other components are not particularly limited and can be appropriately selected according to the purpose, and examples thereof include a film forming resin, a curing agent, and a silane coupling agent.

상기 막 형성 수지, 상기 경화제, 상기 실란 커플링제로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 상기 도전성 입자 함유층의 설명에 있어서 예시한 상기 막 형성 수지, 상기 경화제, 상기 실란 커플링제 등을 들 수 있다.The film forming resin, the curing agent, and the silane coupling agent are not particularly limited and may be appropriately selected in accordance with the purpose. For example, the film forming resin, the curing agent, the silane coupling agent, LINGER, and the like.

상기 절연성 접착층에 있어서의 상기 막 형성 수지, 상기 경화제, 상기 실란 커플링제의 함유량으로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있다.The content of the film-forming resin, the curing agent, and the silane coupling agent in the insulating adhesive layer is not particularly limited and may be appropriately selected depending on the purpose.

상기 절연성 접착층의 평균 두께로서는 특별히 제한은 없고, 상기 도전성 입자 함유층의 두께와의 관계에서 적절히 선택할 수 있지만, 5㎛ 내지 20㎛가 바람직하고, 10㎛ 내지 14㎛가 보다 바람직하고, 11㎛ 내지 13㎛가 특히 바람직하다. 상기 평균 두께가 5㎛ 미만이면, 단자 간에 있어서의 수지 충전율이 감소하는 경우가 있고, 20㎛를 초과하면, 접속 불량의 발생 원인이 되는 경우가 있다.The average thickness of the insulating adhesive layer is not particularly limited and may be appropriately selected in relation to the thickness of the conductive particle-containing layer. The thickness is preferably 5 占 퐉 to 20 占 퐉, more preferably 10 占 퐉 to 14 占 퐉, Mu m is particularly preferable. If the average thickness is less than 5 占 퐉, the resin filling rate between the terminals may decrease. If the average thickness exceeds 20 占 퐉, connection failure may occur.

여기서, 상기 평균 두께는 임의로 상기 절연성 접착층의 5군데의 두께를 측정했을 때의 평균값이다.Here, the average thickness is an average value when five thicknesses of the insulating adhesive layer are arbitrarily measured.

상기 이방성 도전 필름의 두께로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있다.The thickness of the anisotropic conductive film is not particularly limited and may be appropriately selected depending on the purpose.

본 발명의 이방성 도전 필름의 일례를 도면을 사용하여 설명한다. 도 1 내지 도 3은, 본 발명의 이방성 도전 필름의 일례를 나타내는 개략 단면도이다. 도 1의 이방성 도전 필름(1)은 도전성 입자 함유층(2)과 절연성 접착층(3)을 갖고 있고, 도전성 입자 함유층(2)은 도전성 입자(4)를 함유하고 있고, 절연성 접착층(3)은 광 산란성 미립자(5)를 함유하고 있다. 도 2의 이방성 도전 필름(1)은 도전성 입자 함유층(2)과 절연성 접착층(3)을 갖고 있고, 도전성 입자 함유층(2)은 도전성 입자(4) 및 광 산란성 미립자(5)를 함유하고 있다. 도 3의 이방성 도전 필름(1)은 도전성 입자 함유층(2)과 절연성 접착층(3)을 갖고 있고, 도전성 입자 함유층(2)은 도전성 입자(4) 및 광 산란성 미립자(5)를 함유하고 있고, 절연성 접착층(3)은 광 산란성 미립자(5)를 함유하고 있다.An example of the anisotropic conductive film of the present invention will be described with reference to the drawings. 1 to 3 are schematic sectional views showing an example of an anisotropic conductive film of the present invention. The anisotropic conductive film 1 of Fig. 1 has the conductive particle containing layer 2 and the insulating adhesive layer 3, the conductive particle containing layer 2 contains the conductive particles 4, And contains scattering fine particles (5). The anisotropic conductive film 1 of Fig. 2 has a conductive particle containing layer 2 and an insulating adhesive layer 3, and the conductive particle containing layer 2 contains conductive particles 4 and light scattering fine particles 5. The anisotropic conductive film 1 of Fig. 3 has the conductive particle containing layer 2 and the insulating adhesive layer 3 and the conductive particle containing layer 2 contains the conductive particles 4 and the light scattering fine particles 5, The insulating adhesive layer 3 contains the light-scattering fine particles 5.

(접속 방법, 및 접합체)(Connection method, and bonding body)

본 발명의 접속 방법은 부착 공정과, 광 조사 공정을 적어도 포함하고, 또한 필요에 따라, 그 밖의 공정을 포함한다.The connecting method of the present invention includes at least an adhering step and a light irradiation step, and further includes other steps as necessary.

상기 접속 방법은 기판의 단자와 전자 부품의 단자를 이방성 도전 접속시키는 접속 방법이다.The connection method is a connection method in which the terminals of the board and the terminals of the electronic component are anisotropically electrically connected.

본 발명의 접합체는 본 발명의 상기 접속 방법에 의해 제조된다.The junction body of the present invention is manufactured by the above connection method of the present invention.

<기판><Substrate>

상기 기판으로서는, 이방성 도전 접속이 대상이 되는 단자를 갖는 기판이고, 본 발명의 상기 이방성 도전 필름을 경화시키는 광을 투과하는 기판이라면, 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 유리 기판, 플라스틱 기판 등을 들 수 있다.The substrate is not particularly limited as long as it is a substrate having terminals to which anisotropic conductive connection is to be applied and is a substrate through which light for curing the anisotropic conductive film of the present invention is transmitted and can be appropriately selected in accordance with the purpose, A glass substrate, a plastic substrate, and the like.

상기 기판의 크기, 형상, 구조로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있다.The size, shape, and structure of the substrate are not particularly limited and may be appropriately selected according to the purpose.

상기 단자는 상기 이방성 도전 필름을 경화시키는 광을 투과하지 않는 단자이다.The terminal is a terminal that does not transmit light for curing the anisotropic conductive film.

상기 단자의 재질로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 금, 은, 구리, 알루미늄 등의 금속을 들 수 있다.The material of the terminal is not particularly limited and may be appropriately selected in accordance with the purpose, and examples thereof include metals such as gold, silver, copper and aluminum.

상기 단자의 크기, 형상, 구조로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있다.The size, shape, and structure of the terminal are not particularly limited and can be appropriately selected according to the purpose.

<전자 부품><Electronic parts>

상기 전자 부품으로서는, 이방성 도전 접속이 대상이 되는 단자를 갖는 전자 부품이라면, 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 IC칩, TAB(Tape Automated Bonding; 테이프 자동 접합) 테이프, 액정 패널 등을 들 수 있다. 상기 IC칩으로서는, 예를 들면 플랫 패널 디스플레이(FPD)에 있어서의 액정 화면 제어용 IC칩 등을 들 수 있다.The electronic component is not particularly limited as long as it is an electronic component having terminals to which anisotropic conductive connection is to be subjected and can be appropriately selected in accordance with the purpose. Examples thereof include an IC chip, a tape automated bonding (TAB) tape, A liquid crystal panel and the like. Examples of the IC chip include a liquid crystal screen control IC chip in a flat panel display (FPD).

<부착 공정><Adhesion Process>

상기 부착 공정으로서는, 상기 기판의 단자 상에 이방성 도전 필름을 부착하는 공정이라면, 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있다.The adhering step is not particularly limited as long as it is a step of adhering an anisotropic conductive film on a terminal of the substrate, and can be appropriately selected in accordance with the purpose.

상기 이방성 도전 필름은 본 발명의 상기 이방성 도전 필름이다.The anisotropic conductive film is the anisotropic conductive film of the present invention.

상기 부착 공정에 있어서는, 통상 상기 이방성 도전 필름의 상기 도전성 입자 함유층이 상기 기판의 단자에 접촉하도록, 상기 이방성 도전 필름을 상기 기판의 단자 상에 부착한다.In the attaching step, the anisotropic conductive film is usually attached on the terminal of the substrate such that the conductive particle-containing layer of the anisotropic conductive film is in contact with the terminal of the substrate.

<광 조사 공정><Light irradiation step>

상기 광 조사 공정으로서는, 상기 전자 부품이 적재된 상기 이방성 도전 필름에 대하여 상기 기판측으로부터 광을 조사하는 공정이라면, 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있다.The light irradiation step is not particularly limited as long as it is a step of irradiating light from the substrate side to the anisotropic conductive film on which the electronic component is mounted, and can be appropriately selected in accordance with the purpose.

상기 광 조사 공정 전에, 상기 전자 부품은 상기 이방성 도전 필름 상에 적재된다. 이때, 상기 이방성 도전 필름의 상기 절연성 접착층이 상기 전자 부품의 단자와 접하고 있다.Prior to the light irradiation step, the electronic component is mounted on the anisotropic conductive film. At this time, the insulating adhesive layer of the anisotropic conductive film is in contact with the terminal of the electronic component.

상기 이방성 도전 필름에의 광의 조사는, 상기 기판측으로부터 행해진다. 즉, 상기 이방성 도전 필름에의 광의 조사는, 상기 기판 너머에서 행해진다. 이때, 상기 기판의 단자는, 광을 투과하지 않는 단자이기 때문에, 상기 기판의 단자의 광 조사원측과 반대측에 있는 상기 이방성 도전 필름의 부위에는, 상기 광 조사원으로부터의 광이 직접적으로는 미치지 않는다. 그러나, 상기 이방성 도전 필름의 상기 도전성 입자 함유층 및 상기 절연성 접착층 중 적어도 어느 하나가, 상기 광 산란성 미립자를 함유함으로써, 상기 기판 너머로 상기 이방성 도전 필름에 입사한 광은, 상기 광 산란성 미립자에 의해 산란되어, 상기 광 조사원으로부터의 광이 직접적으로는 도달하지 않는 부위에도 광이 널리 퍼지고, 상기 광 조사원으로부터의 광이 직접적으로는 도달하지 않는 상기 이방성 도전 필름의 부위도 우수한 경화성을 얻을 수 있다. 그 결과, 우수한 도통 저항을 얻을 수 있다.Irradiation of light to the anisotropic conductive film is performed from the substrate side. That is, irradiation of light to the anisotropic conductive film is performed beyond the substrate. At this time, since the terminal of the substrate is a terminal that does not transmit light, light from the light irradiation source is not directly incident on a portion of the anisotropic conductive film opposite to the light irradiation side of the terminal of the substrate. However, when at least one of the conductive particle-containing layer and the insulating adhesive layer of the anisotropic conductive film contains the light-scattering fine particles, the light incident on the anisotropic conductive film over the substrate is scattered by the light-scattering fine particles , Light is widely spread even in a region where the light from the light source does not directly reach, and the region of the anisotropic conductive film where the light from the light source does not reach directly can also obtain excellent curability. As a result, excellent conduction resistance can be obtained.

상기 광으로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있지만, 상기 도전성 입자 함유층 및 상기 절연성 입자 함유층의 광 경화성 수지를 경화시키기 쉬운 점에서, 자외선이 바람직하다. 상기 자외선의 파장으로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 200nm 내지 400nm 등을 들 수 있다.The light is not particularly limited and may be appropriately selected in accordance with the purpose. Ultraviolet rays are preferable because it is easy to cure the photocurable resin of the conductive particle-containing layer and the insulating particle-containing layer. The wavelength of the ultraviolet ray is not particularly limited and may be suitably selected in accordance with the purpose. Examples thereof include 200 nm to 400 nm.

상기 광의 조사원(광 조사원)으로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 LED(Light Emitting Diode; 발광 다이오드) 램프, YAG(Yttrium Aluminum Garnet; 이트륨 알루미늄 가넷) 레이저, 크세논 램프, 할로겐 램프 등을 들 수 있다.The light source (light irradiation source) is not particularly limited and may be appropriately selected according to the purpose. Examples of the light source include a light emitting diode (LED) lamp, a YAG (Yttrium Aluminum Garnet) Halogen lamps and the like.

상기 광의 조사량으로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있다.The irradiation dose of the light is not particularly limited and may be appropriately selected depending on the purpose.

상기 광 조사 공정시에는, 상기 이방성 도전 필름을 가열 및 가압하는 처리를 병용하는 것이 바람직하다.In the light irradiation step, it is preferable that the anisotropic conductive film is used in combination with a heating and pressurizing treatment.

상기 가열 및 가압하는 처리는, 상기 광 조사를 행하기 전에 개시하고, 상기 광 조사가 종료할 때까지 행하는 것이 바람직하다.It is preferable that the heating and pressurizing process is started before the light irradiation is performed, and is performed until the light irradiation is finished.

상기 가열 및 가압하는 처리로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 가열 가압 부재를 사용하여 행할 수 있다.The heating and pressurizing treatment is not particularly limited and can be appropriately selected according to the purpose. For example, heating and pressing members can be used.

상기 가열 가압 부재로서는, 예를 들면 가열 기구를 갖는 가압 부재 등을 들 수 있다. 상기 가열 기구를 갖는 가압 부재로서는, 예를 들면 히트 툴 등을 들 수 있다.Examples of the heating and pressing member include a pressing member having a heating mechanism. As a pressing member having the above heating mechanism, for example, a heat tool and the like can be mentioned.

상기 가열의 온도로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있지만, 80℃ 내지 140℃가 바람직하다.The temperature for the heating is not particularly limited and may be appropriately selected according to the purpose, and is preferably 80 캜 to 140 캜.

상기 가압의 압력으로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있지만, 0.1MPa 내지 100MPa가 바람직하다.The pressurizing pressure is not particularly limited and may be suitably selected in accordance with the intended use, and is preferably 0.1 MPa to 100 MPa.

상기 가열 및 가압의 시간으로서는 특별히 제한은 없고, 목적에 따라서 적절히 선택할 수 있고, 예를 들면 0.5초간 내지 120초간을 들 수 있다.The heating and pressurizing time is not particularly limited and may be appropriately selected depending on the purpose, and may be, for example, from 0.5 seconds to 120 seconds.

본 발명의 접속 방법의 일례에 대하여 도면을 사용하여 설명한다. 도 4a 내지 도 4c는, 본 발명의 접속 방법을 설명하기 위한 개략도이다. 우선, 단자(7)를 갖는 기판(6)에, 이방성 도전 필름(1)을 상기 이방성 도전 필름(1)의 도전성 입자 함유층(2)이 단자(7)에 접하도록 부착한다(도 4a). 계속해서, 그 부착한 이방성 도전 필름(1)의 절연성 접착층(3) 상에 단자(8)를 갖는 전자 부품(9)을 적재한다. 이 시점에서는, 기판(6)과 전자 부품(9)은 아직 이방성 도전 접속되어 있지 않다(도 4b). 그리고, 전자 부품(9) 위로부터 가열 가압 부재(도시하지 않음)에 의해 전자 부품(9)을 가열 및 가압하면서, 광 조사원(10)으로부터 기판(6) 너머로 도전성 입자 함유층(2) 및 절연성 접착층(3)에 광 조사함으로써, 기판(6)과 전자 부품(9)을 이방성 도전 접속한다(도 4c). 이때에, 상기 도전성 입자 함유층(2) 및 상기 절연성 접착층(3) 중 적어도 어느 하나가 광 산란성 미립자(5)를 함유함으로써, 기판(6) 너머로 상기 이방성 도전 필름(1)에 입사한 광은, 광 산란성 미립자(5)에 의해 산란되어, 광 조사원(10)으로부터의 광이 직접적으로는 도달하지 않는 부위에도 광이 널리 퍼져, 광 조사원(10)으로부터의 광이 직접적으로는 도달하지 않는 이방성 도전 필름(1)의 부위도 우수한 경화성을 얻을 수 있다. 그 결과, 우수한 도통 저항을 얻을 수 있다.An example of a connection method of the present invention will be described with reference to the drawings. 4A to 4C are schematic views for explaining the connection method of the present invention. First, the anisotropic conductive film 1 is attached to the substrate 6 having the terminal 7 so that the conductive particle-containing layer 2 of the anisotropic conductive film 1 is in contact with the terminal 7 (Fig. 4A). Subsequently, the electronic component 9 having the terminal 8 is mounted on the insulating adhesive layer 3 of the anisotropic conductive film 1 to which the electronic component 9 is attached. At this point, the substrate 6 and the electronic component 9 are not yet anisotropically conductive connected (Fig. 4B). Then, while the electronic component 9 is heated and pressed from above the electronic component 9 by the heating and pressing member (not shown), the conductive particle containing layer 2 and the insulating adhesive layer The substrate 6 is anisotropically electrically connected to the electronic component 9 by irradiating the substrate 6 with light (FIG. 4C). At this time, at least one of the conductive particle-containing layer 2 and the insulating adhesive layer 3 contains the light-scattering fine particles 5, so that the light incident on the anisotropic conductive film 1 over the substrate 6, The light is scattered by the light scattering fine particles 5 so that the light spreads even in a region where the light from the light irradiation source 10 does not reach directly and the light from the light irradiation source 10 does not reach directly, The film 1 also has excellent curability. As a result, excellent conduction resistance can be obtained.

<실시예><Examples>

이하, 본 발명의 실시예를 설명하지만, 본 발명은 이들 실시예로 어떠한 한정이 되는 것은 아니다.Hereinafter, the embodiments of the present invention will be described, but the present invention is not limited to these embodiments.

실시예에 있어서, 광 산란성 미립자의 평균 입경은, 입도 분포 측정 장치(FPAR-1000, 오츠카 덴시 가부시끼가이샤 제조)에 의해 측정하였다.In the examples, the average particle diameter of the light-scattering fine particles was measured by a particle size distribution measuring apparatus (FPAR-1000, manufactured by Otsuka Denshi Kabushiki Kaisha).

(비교예 1)(Comparative Example 1)

<이방성 도전 필름의 제작>&Lt; Fabrication of anisotropic conductive film &

-도전성 입자 함유층의 제작-- Preparation of conductive particle-containing layer -

페녹시 수지(품명: YP70, 신닛테쯔 가가꾸 가부시끼가이샤 제조), 액상 에폭시 수지(품명: EP828, 미쯔비시 가가꾸 가부시끼가이샤 제조), 고형 에폭시 수지(품명: YD014, 신닛테쯔 가가꾸 가부시끼가이샤 제조), 도전성 입자(품명: AUL704, 세끼스이 가가꾸 고교 가부시끼가이샤 제조) 및 양이온계 경화제(광 양이온 경화제, 품명: LW-S1, 산아프로 가부시끼가이샤 제조)를 표 1-1에 나타내는 배합으로, 교반 장치(자전 공전 믹서, 아와토리 넨타로우, 가부시끼가이샤 신키 제조)를 사용하여 균일하게 혼합하였다. 혼합 후의 배합물을 박리 처리한 PET(폴리에틸렌테레프탈레이트 필름) 상에 건조 후의 평균 두께가 6㎛가 되도록 도포하여, 도전성 입자 함유층을 제작하였다.(Trade name: YD014, available from Shin-Nittsu Chemical Co., Ltd.), phenoxy resin (trade name: YP70, manufactured by Shinnitetsu Chemical Co., Ltd.), liquid epoxy resin (trade name: EP828, manufactured by Mitsubishi Chemical Co., (Manufactured by Sekisui Chemical Co., Ltd.), and a cationic curing agent (a cationic curing agent, trade name: LW-S1, manufactured by SAN-A PROBE CO., LTD.) , The mixture was homogeneously mixed using a stirring device (a revolving mixer, Awatolin Ultralow, manufactured by Shinki Kagaku Co., Ltd.). The mixture after the mixing was coated on the peeled PET (polyethylene terephthalate film) so that the average thickness after drying was 6 占 퐉 to prepare a conductive particle-containing layer.

-절연성 접착층의 제작-- Preparation of insulating adhesive layer -

페녹시 수지(품명: YP70, 신닛테쯔 가가꾸 가부시끼가이샤 제조), 액상 에폭시 수지(품명: EP828, 미쯔비시 가가꾸 가부시끼가이샤 제조), 고형 에폭시 수지(품명: YD014, 신닛테쯔 가가꾸 가부시끼가이샤 제조) 및 양이온계 경화제(광 양이온 경화제, 품명: LW-S1, 가부시끼가이샤 산아프로 제조)를 표 1-1에 나타내는 배합으로, 교반 장치(자전 공전 믹서, 아와토리 넨타로우, 가부시끼가이샤 신키 제조)를 사용하여 균일하게 혼합하였다. 혼합 후의 배합물을 박리 처리한 PET 상에 건조 후의 평균 두께가 12㎛가 되도록 도포하여, 절연성 접착층을 제작하였다.(Trade name: YD014, available from Shin-Nittsu Chemical Co., Ltd.), phenoxy resin (trade name: YP70, manufactured by Shinnitetsu Chemical Co., Ltd.), liquid epoxy resin (trade name: EP828, manufactured by Mitsubishi Chemical Co., Ltd.) and a cationic curing agent (photo cationic curing agent, product name: LW-S1, manufactured by KANPO Co., Ltd.) were mixed in the formulations shown in Table 1-1 using a stirring device (a revolving mixer, Awatolin Ultralow, Manufactured by Shinki). The mixture after the mixing was coated on the peeled PET so that the average thickness after drying was 12 占 퐉 to prepare an insulating adhesive layer.

상기에서 얻어진 도전성 입자 함유층과 절연성 접착층을 롤 라미네이터를 사용하여, 롤 온도 45℃에서 라미네이트하여, 이방성 도전 필름을 얻었다.The conductive particle-containing layer and the insulating adhesive layer obtained above were laminated at a roll temperature of 45 캜 using a roll laminator to obtain an anisotropic conductive film.

<접속 방법(접합체의 제조)>&Lt; Connection method (Fabrication of bonded body) >

주연부에 3열 지그재그 배치(staggered arrangement)된 금 범프를 갖는 시험용 IC칩(범프 사이즈 2,550㎛2, 범프 높이 15㎛, 피치 15㎛(외측 범프 열과 중앙 범프 열 및 중앙 범프 열과 내측 범프 열 사이의 각각의 거리 15㎛, 각 열 내의 범프 사이의 거리 15㎛))과, 상기 시험용 IC칩의 범프에 대응하는 Al 배선(평균 두께 0.5㎛)을 갖는 유리 기판(유리 두께 0.7mm)을 사용하여, 이방성 도전 접속을 행하였다.A test IC chip having gold bumps staggered in three rows on its periphery (bump size 2,550 占 퐉 2 , bump height 15 占 퐉, pitch 15 占 퐉 (outer bump row, center bump row, and center bump row and inner bump row, (Average thickness: 0.5 mu m) corresponding to the bumps of the IC chip for testing, and a glass substrate (glass thickness: 0.7 mm) having an anisotropic Conducting connection was performed.

구체적으로는, 비교예 1에서 제작한 이방성 도전 필름을 1.5mm 폭으로 슬릿하여, 도전성 입자 함유층이 상기 유리 기판에 접하도록, 이방성 도전 필름을 상기 유리 기판에 부착하였다.Specifically, the anisotropic conductive film produced in Comparative Example 1 was slit with a width of 1.5 mm, and an anisotropic conductive film was attached to the glass substrate such that the conductive particle-containing layer came into contact with the glass substrate.

그 위에, 상기 시험용 IC칩을 두고 임시 고정한 후, 히트 툴 1.5mm 폭으로 완충재(두께 70㎛의 테플론(등록 상표))를 사용하여, 압착 조건 120℃, 80MPa, 10초간(툴 스피드 25mm/초간, 스테이지 온도 30℃)으로 가열 가압을 개시하고, 개시부터 5초간 후에, 상기 유리 기판측에서 360nm에 최대 발광 파장을 갖는 LED 램프(컨트롤러: ZUV-C20H, 헤드 유닛: ZUV-H20MB, 렌즈 유닛: ZUV-212L, 옴론 가부시끼가이샤 제조)를 사용하여 400W/㎠에서 5초간, UV 조사를 행하였다. 또한, UV 조사시, 가열 가압은 유지하고 있었다.After the test IC chip was temporarily fixed thereon, the test tool was temporarily fixed with a heat tool using a cushioning material (Teflon (registered trademark) having a thickness of 70 mu m) with a width of 1.5 mm and a pressing condition of 120 DEG C and 80 MPa for 10 seconds (tool speed of 25 mm / (Controller: ZUV-C20H, head unit: ZUV-H20MB, lens unit: 20 minutes) having a maximum emission wavelength at 360 nm on the glass substrate side was started after 5 seconds from the start, ZUV-212L, manufactured by OMRON Kabushiki Kaisha) for 5 seconds at 400 W / cm 2. Further, during the UV irradiation, the heating and pressing was maintained.

<평가><Evaluation>

제작한 접합체에 대해서, 이하의 평가를 행하였다. 결과를 표 1-1에 나타내었다.The following evaluations were carried out on the bonded body thus produced. The results are shown in Table 1-1.

〔도통 저항〕[Continuity Resistance]

각 접합체에 대해서, 30군데의 단자 사이의 저항값(Ω)을 4 단자법을 사용하여 전류 1mA를 흘려 측정하였다. 그때의 최댓값(max) 및 평균값(ave.)을 구하였다.For each junction, the resistance (Ω) between the 30 terminals was measured by flowing a current of 1 mA using the four terminal method. The maximum value (max) and the average value (ave.) At that time were obtained.

〔압흔의 관찰〕[Observation of indentation]

접합체의 유리 기판측에서, 이방성 도전 필름의 이방성 도전 접속부에 있어서의, 3열 지그재그 배열 범프의 길이 방향 중앙 위치, 범프 열의 길이 방향 전체 길이 L의 0.1L 및 0.9L의 위치에 3군데를 배율 10배로 현미경 관찰하고, 압흔의 균일성에 대하여 이하의 평가 기준으로 평가하였다.On the glass substrate side of the bonded body, the three locations in the longitudinal center position of the three-row zigzag array bumps in the anisotropic conductive connection portion of the anisotropic conductive film, And the uniformity of indentation was evaluated by the following evaluation criteria.

-평가 기준--Evaluation standard-

◎: 3개의 관찰 위치에 대하여 각각 10군데 관찰한 결과, 어느 쪽의 관찰 위치에 있어서도 9군데 이상에서 압흔이 관찰된 경우&Amp; cir &amp; &amp; cir &amp;: When indentations were observed at 9 or more points at any of the observation positions,

○: 3개의 관찰 위치에 대하여 각각 10군데 관찰한 결과, 어느 쪽인가의 관찰 위치에 있어서 7군데 또는 8군데에서 압흔이 관찰되고, 그 이외에서는 9군데 이상에서 압흔이 관찰된 경우○: When 10 observations were made at 3 observation positions, indentations were observed at 7 or 8 sites at any observation position, and indentations were observed at 9 or more positions

△: 3개의 관찰 위치에 대하여 각각 10군데 관찰한 결과, 어느 쪽인가의 관찰 위치에 있어서 5군데 또는 6군데에서 압흔이 관찰되고, 그 이외에서는 9군데 이상에서 압흔이 관찰된 경우[Delta]: As a result of observing 10 points at each of the 3 observation positions, indentation was observed at 5 points or 6 points at any of the observation positions, and indentation was observed at 9 points or more

×: 3개의 관찰 위치에 대하여 각각 10군데 관찰한 결과, 어느 쪽인가의 관찰 위치에서 압흔을 관찰할 수 있었던 것이 5군데 미만인 경우X: When 10 observations were made for each of the three observing positions, when indentations were observed at any of the observation positions at less than 5 points

〔경화율〕[Curing rate]

접합체에 있어서의 Al 배선 상의 도전성 입자 함유층 및 유리 기판 상의 도전성 입자 함유층 각각에 대해서, 경화율을 측정하였다. 경화율은 도전성 입자 함유층 중의 수지의 에폭시기 감소율에 의해 구하였다. 즉, 이방성 도전 접속 전의 도전성 입자 함유층 중의 수지의 에폭시기가 이방성 도전 접속에 의해 얼마나 감소했는지를, 적외 흡수 스펙트럼의 914cm-1의 흡수를 측정함으로써 구하였다.The curing rate was measured for each of the conductive particle-containing layer on the Al wiring and the conductive particle-containing layer on the glass substrate in the bonded body. The curing rate was determined by the epoxy group reduction rate of the resin in the conductive particle-containing layer. That is, how the epoxy group of the resin in the conductive particle-containing layer before the anisotropic conductive connection was reduced by the anisotropic conductive connection was determined by measuring the absorption at 914 cm -1 of the infrared absorption spectrum.

(실시예 1 내지 13)(Examples 1 to 13)

<이방성 도전 필름 및 접합체의 제작>&Lt; Preparation of anisotropic conductive film and bonded body &

비교예 1에 있어서, 도전성 입자 함유층 및 절연성 접착층의 배합 및 평균 두께를, 표 1-1 내지 표 1-2에 나타내는 배합 및 평균 두께로 변경한 것 이외에는, 비교예 1과 동일하게 하여, 이방성 도전 필름을 얻었다.Anisotropic conductive films were obtained in the same manner as in Comparative Example 1 except that the blend and the average thickness of the conductive particle-containing layer and the insulating adhesive layer in Comparative Example 1 were changed to the blend and the average thickness shown in Tables 1-1 to 1-2, A film was obtained.

또한, 비교예 1과 동일하게 하여, 접합체를 제작하였다.In addition, a bonded body was produced in the same manner as in Comparative Example 1.

비교예 1과 동일한 평가에 제공하였다. 결과를 표 1-1 내지 표 1-2에 나타내었다.The same evaluation as in Comparative Example 1 was given. The results are shown in Tables 1-1 to 1-2.

(비교예 2)(Comparative Example 2)

<이방성 도전 필름 및 접합체의 제작>&Lt; Preparation of anisotropic conductive film and bonded body &

-이방성 도전 필름의 제작-- Fabrication of anisotropic conductive film -

페녹시 수지(품명: YP70, 신닛테쯔 가가꾸 가부시끼가이샤 제조), 액상 에폭시 수지(품명: EP828, 미쯔비시 가가꾸 가부시끼가이샤 제조), 고형 에폭시 수지(품명: YD014, 신닛테쯔 가부시끼가이샤 제조), 도전성 입자(품명: AUL704, 세끼스이 가가꾸 고교 가부시끼가이샤 제조), 양이온계 경화제(광 양이온 경화제, 품명: LW-S1, 가부시끼가이샤 산아프로 제조) 및 산화티타늄 1(R820, 이시하라 산교 가부시끼가이샤 제조)을 표 1-2에 나타내는 배합으로, 교반 장치(자전 공전 믹서, 아와토리 넨타로우, 가부시끼가이샤 신키 제조)를 사용하여 균일하게 혼합하였다. 혼합 후의 배합물을 박리 처리한 PET 상에 건조 후의 평균 두께가 20㎛가 되도록 도포하여, 도전성 입자 함유층만을 포함하는 이방성 도전 필름을 제작하였다.(Trade name: YD014, manufactured by Shinnitetsu Kabushiki Kaisha), a liquid epoxy resin (product name: EP828, manufactured by Mitsubishi Chemical Corporation), phenoxy resin (YP70, manufactured by Shinnitetsu Chemical Co., Ltd.) , A conductive cationic curing agent (trade name: LW-S1, manufactured by Kabushiki Kaisha Industrial Co., Ltd.), and a titanium oxide 1 (R820, manufactured by Ishihara Sangyo Kabushiki Kaisha) Ltd.) were uniformly mixed in the formulations shown in Table 1-2 using an agitator (a revolving mixer, Awatolinentera, manufactured by Shinki Kagaku Co., Ltd.). The mixture after the mixing was applied on the peeled PET so that the average thickness after drying was 20 占 퐉 to prepare an anisotropic conductive film containing only the conductive particle-containing layer.

-접합체의 제작-- Fabrication of bonded body -

비교예 1에 있어서, 이방성 도전 필름을 상기에서 제작한 이방성 도전 필름으로 변경한 것 이외에는, 비교예 1과 동일하게 하여, 접합체를 제작하였다.A bonded body was produced in the same manner as in Comparative Example 1 except that the anisotropic conductive film was changed to the anisotropic conductive film produced in the above-described Comparative Example 1. [

비교예 1과 동일한 평가에 제공하였다. 결과를 표 1-2에 나타내었다.The same evaluation as in Comparative Example 1 was given. The results are shown in Table 1-2.

<표 1-1><Table 1-1>

Figure 112014054389884-pct00001
Figure 112014054389884-pct00001

<표 1-2><Table 1-2>

Figure 112014054389884-pct00002
Figure 112014054389884-pct00002

표 1-1 내지 표 1-2 중의 각 성분의 배합량의 단위는, 질량부이다. 광 산란성 미립자의 함유량(질량％)은 도전성 입자 함유층 및 절연성 접착층의 각각의 층 중의 수지에 대한 함유량(질량％)이다.The unit of the blending amount of each component in Table 1-1 to Table 1-2 is a part by mass. The content (mass%) of the light scattering fine particles is a content (mass%) of the conductive particle-containing layer and the insulating adhesive layer in the respective layers of the resin.

산화티타늄 1(R820, 이시하라 산교 가부시끼가이샤 제조, 루틸형)의 평균 입경은 200nm이다.The average particle diameter of titanium oxide 1 (R820, manufactured by Ishihara Sangyo K.K., rutile type) is 200 nm.

산화티타늄 2(MC-50, 이시하라 산교 가부시끼가이샤 제조, 아나타제형)의 평균 입경은 240nm이다.The average particle diameter of titanium oxide 2 (MC-50, manufactured by Ishihara Sangyo K.K., anatase type) is 240 nm.

산화아연(나노텍(Nanotek) ZnO, CIK 나노텍 가부시끼가이샤 제조)의 평균 입경은 30nm이다.The average particle diameter of zinc oxide (Nanotek ZnO, manufactured by CIK Nanotech Kabushiki Kaisha) is 30 nm.

실시예 1 내지 13의 이방성 도전 필름은 경화성이 우수하고, 압흔도 양호하고, 또한 도통 저항도 우수하였다.The anisotropic conductive films of Examples 1 to 13 were excellent in curability, indentation, and conduction resistance.

특히, 절연성 접착층에만 광 산란성 미립자를 함유시킨 이방성 도전 필름을 사용한 경우(예를 들면, 실시예 2)에는 도전성 입자 함유층에 광 산란성 미립자를 함유시킨 이방성 도전 필름을 사용한 경우(예를 들면, 실시예 1 및 3)에 비해, 도통 저항, 압흔 및 배선 상의 경화율 모두가 더욱 우수하였다. 이것은, 도전성 입자 함유층에 광 산란성 미립자를 함유하면, 기판 또는 기판의 단자와 도전성 입자 함유층과의 계면에서 광이 산란해버려, 이방성 도전 필름에 입사하는 광량이 감소하기 때문이라고 생각된다.Particularly, in the case of using an anisotropic conductive film containing light scattering fine particles only in the insulating adhesive layer (for example, Example 2), when an anisotropic conductive film containing light scattering fine particles is used in the conductive particle containing layer 1 and 3), the conduction resistance, the indentation, and the curing rate on the wiring were all superior. This is presumably because light is scattered at the interface between the terminal of the substrate or the substrate and the conductive particle-containing layer if the conductive particle-containing layer contains the light-scattering fine particles, and the amount of light incident on the anisotropic conductive film is reduced.

광 산란성 미립자의 함유량이 층 중의 수지에 대하여 0.05질량％ 내지 10.00질량％인 경우(실시예 2, 5 및 6)에는 광 산란성 미립자의 함유량이 상기 범위 외의 경우(실시예 4 및 7)에 비하여, 압흔 및 배선 상의 경화율이 더욱 우수하였다.In the case where the content of the light-scattering fine particles is in the range of 0.05% by mass to 10.00% by mass based on the resin in the layer (Examples 2, 5 and 6) The indentation and the curing rate on the wiring were more excellent.

광 산란성 미립자로서의 산화티타늄이 루틸형인 경우(실시예 2)에는, 아나타제형인 경우(실시예 8)에 비하여, 도통 저항, 압흔 및 배선 상의 경화율이 더욱 우수하였다.When the titanium oxide as the light scattering fine particles was a rutile type (Example 2), the conduction resistance, the indentation and the curing rate on the wiring were superior to those of the anatase type (Example 8).

광 산란성 미립자에 산화아연을 사용한 경우(실시예 13)에는 압흔 및 배선 상의 경화율 모두 우수하지만, 압흔 및 배선 상의 경화율이 실시예 2보다는 약간 떨어지고 있었다.In the case of using zinc oxide for the light scattering fine particles (Example 13), the indentation and the curing rate on the wiring were excellent, but the indentation and the curing rate on the wiring were slightly lower than those of Example 2.

도전성 입자 함유층의 평균 두께를 4㎛로 한 경우(실시예 9)에는 실시예 2와 동일 정도로 우수하였다. 도전성 입자 함유층의 평균 두께를 8㎛로 한 경우(실시예 10)에는 도통 저항, 압흔 및 배선 상의 경화율이 모두 우수하지만, 실시예 2보다는 약간 떨어지고 있었다.When the average thickness of the conductive particle-containing layer was 4 탆 (Example 9), it was as good as in Example 2. When the average thickness of the conductive particle-containing layer was 8 탆 (Example 10), the conductivity resistance, the indentation and the curing rate on the wiring were all excellent, but slightly lower than Example 2.

절연성 접착층의 평균 두께를 10㎛로 한 경우(실시예 11) 및 14㎛로 한 경우(실시예 12)에는 도통 저항, 압흔 및 배선 상의 경화율이 모두 우수하지만, 실시예 2보다는 약간 떨어지고 있었다.In Example 12 where the average thickness of the insulating adhesive layer was 10 占 퐉 (Example 11) and 14 占 퐉 (Example 12), the conductivity resistance, the indentation, and the curing rate on the wiring were all excellent.

한편, 광 산란성 미립자를 함유하지 않은 경우(비교예 1)에는 도통 저항, 압흔 및 배선 상의 경화율 모두가, 실시예 1 내지 13보다도 떨어지고 있었다.On the other hand, in the case of not containing the light scattering fine particles (Comparative Example 1), both the conduction resistance, the indentation and the curing rate on the wiring were lower than those of Examples 1 to 13.

도전성 입자 함유층만을 포함하는 이방성 도전 필름에 광 산란성 미립자를 함유한 경우(비교예 2)에는, 압흔이 실시예 1 내지 13보다도 떨어지고 있었다.In the case of containing the light-scattering fine particles in the anisotropic conductive film containing only the conductive particle-containing layer (Comparative Example 2), indentations were lower than in Examples 1 to 13.

<산업상 이용 가능성>&Lt; Industrial applicability >

본 발명의 이방성 도전 필름 및 접속 방법은, 광을 사용한 이방성 도전 접속에 있어서, 광을 투과하지 않은 단자를 기판의 단자로서 사용한 경우에도, 우수한 경화성, 및 우수한 도통 저항을 얻을 수 있는 점에서, 광을 사용한 접합체의 제조에 적절하게 사용할 수 있다.INDUSTRIAL APPLICABILITY The anisotropic conductive film and the connection method of the present invention are advantageous in that an anisotropic conductive connection using light can provide excellent curing properties and excellent conduction resistance even when a terminal that does not transmit light is used as a terminal of a substrate, Can be suitably used for the production of a conjugate using the above-mentioned method.

1 이방성 도전 필름
2 도전성 입자 함유층
3 절연성 접착층
4 도전성 입자
5 광 산란성 미립자
6 기판
7 단자
8 단자
9 전자 부품
10 광 조사원1 anisotropic conductive film
2 conductive particle-containing layer
3 insulating adhesive layer
4 conductive particles
5 light scattering fine particles
6 substrate
7 terminal
8 terminal
9 Electronic components
10 light source

Claims (9)

기판의 단자와 전자 부품의 단자를 이방성 도전 접속시키는 이방성 도전 필름이며,
도전성 입자, 광 양이온 경화제 및 광 양이온 경화성 수지를 함유하는 도전성 입자 함유층과, 광 양이온 경화제 및 광 양이온 경화성 수지를 함유하는 절연성 접착층을 갖고,
상기 도전성 입자 함유층 및 상기 절연성 접착층 중 적어도 어느 하나가, 광 산란성 미립자를 함유하고,
액정 화면 제어 IC칩과 액정 패널의 접속에 사용되는 것을 특징으로 하는 이방성 도전 필름.An anisotropic conductive film for anisotropic conductive connection of a terminal of a substrate and a terminal of an electronic component,
A conductive particle-containing layer containing conductive particles, a photo cationic curing agent and a photo cationic curable resin, and an insulating adhesive layer containing a photo cationic curing agent and a photo cationic curable resin,
Wherein at least one of the conductive particle-containing layer and the insulating adhesive layer contains light scattering fine particles,
Wherein the anisotropic conductive film is used for connection between a liquid crystal screen control IC chip and a liquid crystal panel. 제1항에 있어서, 도전성 입자 함유층 및 절연성 접착층 중, 상기 절연성 접착층만이 광 산란성 미립자를 함유하는 이방성 도전 필름.The anisotropic conductive film according to claim 1, wherein only the insulating adhesive layer contains light scattering fine particles among the conductive particle containing layer and the insulating adhesive layer. 제1항에 있어서, 광 산란성 미립자의 함유량이 상기 광 산란성 미립자가 함유되는 층 중의 수지에 대하여 0.05질량％ 내지 10.00질량％인 이방성 도전 필름.The anisotropic conductive film according to claim 1, wherein the content of the light-scattering fine particles is 0.05% by mass to 10.00% by mass with respect to the resin in the layer containing the light-scattering fine particles. 제1항에 있어서, 광 산란성 미립자가 산화티타늄인 이방성 도전 필름.The anisotropic conductive film according to claim 1, wherein the light-scattering fine particles are titanium oxide. 기판의 단자와 전자 부품의 단자를 이방성 도전 접속시키는 접속 방법이며,
상기 기판의 단자 상에 제1항 내지 제4항 중 어느 한 항에 기재된 이방성 도전 필름을 부착하는 부착 공정과,
상기 전자 부품이 적재된 상기 이방성 도전 필름에 대하여 상기 기판측으로부터 광을 조사하는 광 조사 공정을 포함하는 것을 특징으로 하는 접속 방법.A connection method for anisotropic conductive connection between a terminal of a substrate and a terminal of an electronic component,
An adhering step of adhering the anisotropic conductive film according to any one of claims 1 to 4 on a terminal of the substrate;
And a light irradiation step of irradiating light from the substrate side to the anisotropic conductive film on which the electronic component is mounted. 제5항에 기재된 접속 방법에 의해 얻어지는 것을 특징으로 하는 접합체.


A bonded body obtained by the connecting method according to claim 5.


제1항에 있어서, 광산란성 미립자의 평균 입경이 20nm 내지 1,000nm인 이방성 도전 필름.The anisotropic conductive film according to claim 1, wherein the average particle diameter of the light scattering fine particles is 20 nm to 1,000 nm. 제1항에 있어서, 상기 도전성 입자 함유층의 평균 두께가 4㎛ 내지 8㎛인 이방성 도전 필름.The anisotropic conductive film according to claim 1, wherein the conductive particle-containing layer has an average thickness of 4 탆 to 8 탆. 제1항에 있어서, 상기 절연성 접착층의 평균 두께가 10㎛ 내지 14㎛인 이방성 도전 필름.The anisotropic conductive film according to claim 1, wherein the insulating adhesive layer has an average thickness of 10 mu m to 14 mu m.
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