KR101582207B1 - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

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Publication number
KR101582207B1
KR101582207B1 KR1020140012040A KR20140012040A KR101582207B1 KR 101582207 B1 KR101582207 B1 KR 101582207B1 KR 1020140012040 A KR1020140012040 A KR 1020140012040A KR 20140012040 A KR20140012040 A KR 20140012040A KR 101582207 B1 KR101582207 B1 KR 101582207B1
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South Korea
Prior art keywords
wafer
processing
grooves
plasma
processing apparatus
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KR1020140012040A
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Korean (ko)
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KR20150050305A (ko
Inventor
유타카 구도
히로아키 다키카와
다카히로 사쿠라기
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가부시키가이샤 히다치 하이테크놀로지즈
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
KR1020140012040A 2013-10-30 2014-02-03 플라즈마 처리 장치 Active KR101582207B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-224883 2013-10-30
JP2013224883A JP6282080B2 (ja) 2013-10-30 2013-10-30 プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20150050305A KR20150050305A (ko) 2015-05-08
KR101582207B1 true KR101582207B1 (ko) 2016-01-04

Family

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Family Applications (1)

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KR1020140012040A Active KR101582207B1 (ko) 2013-10-30 2014-02-03 플라즈마 처리 장치

Country Status (3)

Country Link
US (1) US20150114568A1 (enExample)
JP (1) JP6282080B2 (enExample)
KR (1) KR101582207B1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107810542A (zh) * 2015-05-21 2018-03-16 普拉斯玛比利提有限责任公司 具有成形工件夹具的环形等离子体处理装置
JP2018182290A (ja) * 2017-04-18 2018-11-15 日新イオン機器株式会社 静電チャック
JP7192707B2 (ja) * 2019-08-09 2022-12-20 三菱電機株式会社 半導体製造装置
CN112782174A (zh) * 2020-12-25 2021-05-11 西南化工研究设计院有限公司 一种高频无极氩放电离子化检测器及气体中硫、磷化合物的分析方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027339A (ja) 2005-07-15 2007-02-01 Hitachi High-Technologies Corp プラズマ処理装置
KR101054481B1 (ko) 2007-02-09 2011-08-04 도쿄엘렉트론가부시키가이샤 재치대 구조, 이를 이용한 처리 장치, 이 장치의 사용 방법, 및 이를 실행시키는 프로그램을 격납한 컴퓨터 판독가능 기록매체
JP2012142447A (ja) 2010-12-28 2012-07-26 Sharp Corp ウエハ載置機構、ウエハ載置ステージ、及びレジスト形成装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074626A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd ウエハー処理方法及び装置
KR100238629B1 (ko) * 1992-12-17 2000-01-15 히가시 데쓰로 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치
US5810933A (en) * 1996-02-16 1998-09-22 Novellus Systems, Inc. Wafer cooling device
KR200179787Y1 (ko) * 1996-12-30 2000-05-01 김영환 플라즈마 장치의 웨이퍼 스테이지
US6199140B1 (en) * 1997-10-30 2001-03-06 Netlogic Microsystems, Inc. Multiport content addressable memory device and timing signals
JP2002057210A (ja) 2001-06-08 2002-02-22 Applied Materials Inc ウェハ支持装置及び半導体製造装置
US6506291B2 (en) * 2001-06-14 2003-01-14 Applied Materials, Inc. Substrate support with multilevel heat transfer mechanism
US20030168174A1 (en) * 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
JP2007067394A (ja) * 2005-08-05 2007-03-15 Tokyo Electron Ltd 基板処理装置およびそれに用いる基板載置台
JP4861208B2 (ja) 2006-01-31 2012-01-25 東京エレクトロン株式会社 基板載置台および基板処理装置
JP2006303514A (ja) * 2006-05-01 2006-11-02 Fujitsu Ltd 静電チャック、成膜方法及びエッチング方法
JP5125010B2 (ja) * 2006-07-20 2013-01-23 ソニー株式会社 固体撮像装置、及び制御システム
JP2012054399A (ja) 2010-09-01 2012-03-15 Hitachi Kokusai Electric Inc 半導体製造装置及び半導体製造方法
JP6518666B2 (ja) * 2013-08-05 2019-05-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 薄い基板をハンドリングするための静電キャリア

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027339A (ja) 2005-07-15 2007-02-01 Hitachi High-Technologies Corp プラズマ処理装置
KR101054481B1 (ko) 2007-02-09 2011-08-04 도쿄엘렉트론가부시키가이샤 재치대 구조, 이를 이용한 처리 장치, 이 장치의 사용 방법, 및 이를 실행시키는 프로그램을 격납한 컴퓨터 판독가능 기록매체
JP2012142447A (ja) 2010-12-28 2012-07-26 Sharp Corp ウエハ載置機構、ウエハ載置ステージ、及びレジスト形成装置

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Publication number Publication date
JP6282080B2 (ja) 2018-02-21
US20150114568A1 (en) 2015-04-30
KR20150050305A (ko) 2015-05-08
JP2015088573A (ja) 2015-05-07

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