KR101571181B1 - 마이크로리소그래피 투사 노광 장치 - Google Patents

마이크로리소그래피 투사 노광 장치 Download PDF

Info

Publication number
KR101571181B1
KR101571181B1 KR1020107016219A KR20107016219A KR101571181B1 KR 101571181 B1 KR101571181 B1 KR 101571181B1 KR 1020107016219 A KR1020107016219 A KR 1020107016219A KR 20107016219 A KR20107016219 A KR 20107016219A KR 101571181 B1 KR101571181 B1 KR 101571181B1
Authority
KR
South Korea
Prior art keywords
illumination
object field
exit pupil
mirror array
bundle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020107016219A
Other languages
English (en)
Korean (ko)
Other versions
KR20100107014A (ko
Inventor
미셀 라이
마르크스 데귄테르
미셀 파트라
요하네스 방글러
만프레드 마울
다미안 피올카
군둘라 바이스
Original Assignee
칼 짜이스 에스엠티 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 칼 짜이스 에스엠티 게엠베하 filed Critical 칼 짜이스 에스엠티 게엠베하
Publication of KR20100107014A publication Critical patent/KR20100107014A/ko
Application granted granted Critical
Publication of KR101571181B1 publication Critical patent/KR101571181B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70583—Speckle reduction, e.g. coherence control or amplitude/wavefront splitting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/10—Scanning systems
    • G02B26/105—Scanning systems with one or more pivoting mirrors or galvano-mirrors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/09—Multifaceted or polygonal mirrors, e.g. polygonal scanning mirrors; Fresnel mirrors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
KR1020107016219A 2007-12-21 2008-12-18 마이크로리소그래피 투사 노광 장치 Expired - Fee Related KR101571181B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US1591807P 2007-12-21 2007-12-21
US61/015,918 2007-12-21
DE102008008019.5 2008-02-07
DE102008008019 2008-02-07

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020157016970A Division KR101681858B1 (ko) 2007-12-21 2008-12-18 마이크로리소그래피 투사 노광 장치

Publications (2)

Publication Number Publication Date
KR20100107014A KR20100107014A (ko) 2010-10-04
KR101571181B1 true KR101571181B1 (ko) 2015-12-04

Family

ID=40719529

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020157016970A Expired - Fee Related KR101681858B1 (ko) 2007-12-21 2008-12-18 마이크로리소그래피 투사 노광 장치
KR1020107016219A Expired - Fee Related KR101571181B1 (ko) 2007-12-21 2008-12-18 마이크로리소그래피 투사 노광 장치

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1020157016970A Expired - Fee Related KR101681858B1 (ko) 2007-12-21 2008-12-18 마이크로리소그래피 투사 노광 장치

Country Status (8)

Country Link
US (4) US8891057B2 (https=)
EP (1) EP2238515B1 (https=)
JP (1) JP5366970B2 (https=)
KR (2) KR101681858B1 (https=)
CN (2) CN103558738B (https=)
DE (1) DE102008054582A1 (https=)
TW (1) TWI450049B (https=)
WO (1) WO2009080279A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200001661A (ko) * 2018-06-27 2020-01-07 삼성디스플레이 주식회사 빔 성형 광학 시스템 및 빔 성형 방법

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008095695A2 (de) 2007-02-06 2008-08-14 Carl Zeiss Smt Ag Verfahren und vorrichtung zur überwachung von mehrfachspiegelanordnungen in einem beleuchtungssystem einer mikrolithographischen projektionsbelichtungsanlage
DE102008054582A1 (de) 2007-12-21 2009-07-09 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage
NL2005548A (en) 2009-11-20 2011-05-23 Asml Netherlands Bv Homogenizer.
EP2354853B1 (en) 2010-02-09 2013-01-02 Carl Zeiss SMT GmbH Optical raster element, optical integrator and illumination system of a microlithographic projection exposure apparatus
WO2012152294A1 (en) 2011-05-06 2012-11-15 Carl Zeiss Smt Gmbh Illumination system of a microlithographic projection exposure apparatus
US8681413B2 (en) 2011-06-27 2014-03-25 Kla-Tencor Corporation Illumination control
DE102011081825B4 (de) 2011-08-30 2013-10-10 Oculus Optikgeräte GmbH Ophthalmologisches Analysegerät und Verfahren
DE102011081827A1 (de) 2011-08-30 2013-02-28 Oculus Optikgeräte GmbH Ophthalmologisches Analysegerät und Verfahren
DE102012216284A1 (de) * 2011-09-27 2013-03-28 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage
CN104220931B (zh) * 2012-03-29 2016-10-12 卡尔蔡司Smt有限责任公司 补偿微光刻投射曝光系统的通道缺陷的设备及方法
CN102654734B (zh) * 2012-04-06 2014-06-04 北京理工大学 双吸收层交替相移l/s掩模锥形衍射场的计算方法
DE102012211846A1 (de) 2012-07-06 2013-08-01 Carl Zeiss Smt Gmbh Verfahren zum Messen einer winkelaufgelösten Intensitätsverteilung sowie Projektionsbelichtungsanlage
DE102012212758A1 (de) 2012-07-20 2014-01-23 Carl Zeiss Smt Gmbh Systemkorrektur aus langen Zeitskalen
KR101591155B1 (ko) 2012-10-08 2016-02-02 칼 짜이스 에스엠티 게엠베하 마이크로리소그래픽 투영 노광 장치의 조명 시스템
EP2720072A1 (en) * 2012-10-12 2014-04-16 Vision Engineering Limited Optical instrument with diffractive element
KR101712299B1 (ko) 2012-10-27 2017-03-13 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 노광 장치의 조명 시스템
JP2014123600A (ja) * 2012-12-20 2014-07-03 Nikon Corp オプティカルインテグレータ、照明ユニット、伝送光学系、照明光学系、露光装置、およびデバイス製造方法
JP6183635B2 (ja) * 2012-12-25 2017-08-23 株式会社ニコン オプティカルインテグレータ、照明ユニット、伝送光学系、照明光学系、露光装置、およびデバイス製造方法
DE102013212613B4 (de) 2013-06-28 2015-07-23 Carl Zeiss Sms Gmbh Beleuchtungsoptik für ein Metrologiesystem sowie Metrologiesystem mit einer derartigen Beleuchtungsoptik
JP6435131B2 (ja) * 2014-08-07 2018-12-05 株式会社Ｓｃｒｅｅｎホールディングス 光照射装置、描画装置および位相差生成器
DE102014219112A1 (de) 2014-09-23 2016-03-24 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithographie sowie Hohlwellenleiter-Komponente hierfür
CN107592919B (zh) 2015-05-13 2019-12-24 卡尔蔡司Smt有限责任公司 微光刻投射曝光设备的照明系统
US10133187B2 (en) * 2015-05-29 2018-11-20 SCREEN Holdings Co., Ltd. Light irradiation apparatus and drawing apparatus
CN106547172B (zh) * 2015-09-17 2018-11-13 上海微电子装备（集团）股份有限公司 一种曝光装置
CN105589305B (zh) * 2015-12-21 2017-10-03 中国科学院长春光学精密机械与物理研究所 微缩投影系统波像差检测过程中的视场点定位方法
US10025093B2 (en) * 2016-04-13 2018-07-17 Microsoft Technology Licensing, Llc Waveguide-based displays with exit pupil expander
DE102016214606B3 (de) 2016-08-05 2017-08-31 Karlsruher Institut für Technologie Verfahren und Vorrichtung zur lithographischen Erzeugung einer Zielstruktur an einer nicht-planaren Ausgangsstruktur
EP3559747B1 (de) * 2016-12-20 2026-03-18 EV Group E. Thallner GmbH Vorrichtung und verfahren zur belichtung einer lichtempfindlichen schicht
US11079564B2 (en) * 2017-07-20 2021-08-03 Cymer, Llc Methods and apparatuses for aligning and diagnosing a laser beam
CN107179653B (zh) * 2017-07-20 2018-10-19 武汉华星光电技术有限公司 一种曝光机及其发光装置
EP3470872B1 (en) * 2017-10-11 2021-09-08 Melexis Technologies NV Sensor device
DE102017220586A1 (de) * 2017-11-17 2019-05-23 Carl Zeiss Smt Gmbh Pupillenfacettenspiegel, Beleuchtungsoptik und optisches System für eine Projek-tionsbelichtungsanlage
CN111460652B (zh) * 2020-03-31 2023-09-22 齐鲁工业大学 一种实现目标面任意照度分布的方法
US12072614B2 (en) 2020-04-23 2024-08-27 Dolby Laboratories Licensing Corporation Projection system and method with adjustable angle illumination
ES2963667T3 (es) 2020-10-23 2024-04-01 Dolby Laboratories Licensing Corp Sistema y método de proyección con iluminación de ángulo ajustable usando descentrado de lente
CN116414010B (zh) * 2023-04-06 2024-04-26 上海镭望光学科技有限公司 一种自由光瞳产生装置及其产生自由光瞳照明的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005503018A (ja) * 2001-09-10 2005-01-27 マイクロニック・レーザー・システムズ・エイビー 空間的にコヒーレントな放射ビームの均等化並びに被工作物上のパターンのプリントおよび検査

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2732498B2 (ja) * 1988-11-24 1998-03-30 株式会社日立製作所 縮小投影式露光方法及びその装置
US6285443B1 (en) 1993-12-13 2001-09-04 Carl-Zeiss-Stiftung Illuminating arrangement for a projection microlithographic apparatus
JPH113849A (ja) * 1997-06-12 1999-01-06 Sony Corp 可変変形照明フィルタ及び半導体露光装置
US7109497B2 (en) * 1998-05-05 2006-09-19 Carl Zeiss Smt Ag Illumination system particularly for microlithography
US6069739A (en) * 1998-06-30 2000-05-30 Intel Corporation Method and lens arrangement to improve imaging performance of microlithography exposure tool
JP3969871B2 (ja) * 1998-12-17 2007-09-05 キヤノン株式会社 露光装置およびデバイス製造方法
US6624880B2 (en) * 2001-01-18 2003-09-23 Micronic Laser Systems Ab Method and apparatus for microlithography
US6563566B2 (en) 2001-01-29 2003-05-13 International Business Machines Corporation System and method for printing semiconductor patterns using an optimized illumination and reticle
US6819490B2 (en) * 2001-09-10 2004-11-16 Micronic Laser Systems Ab Homogenization of a spatially coherent radiation beam and printing and inspection, respectively, of a pattern on a workpiece
TW532480U (en) * 2001-10-12 2003-05-11 Hon Hai Prec Ind Co Ltd Dual reflective light attenuator
KR100760037B1 (ko) 2003-03-31 2007-09-20 에이에스엠엘 마스크툴즈 비.브이. 소스 및 마스크 최적화 방법
JP2004327769A (ja) * 2003-04-25 2004-11-18 Nikon Corp 観察装置、位置検出装置、露光装置、および露光方法
JP4244156B2 (ja) * 2003-05-07 2009-03-25 富士フイルム株式会社 投影露光装置
US7714983B2 (en) * 2003-09-12 2010-05-11 Carl Zeiss Smt Ag Illumination system for a microlithography projection exposure installation
US20050112474A1 (en) * 2003-11-20 2005-05-26 Micronic Laser Systems Ab Method involving a mask or a reticle
DE102004028943B4 (de) * 2004-06-11 2006-10-12 Xtreme Technologies Gmbh Vorrichtung zur zeitlich stabilen Erzeugung von EUV-Strahlung mittels eines laserinduzierten Plasmas
JP4291230B2 (ja) * 2004-08-06 2009-07-08 株式会社日本製鋼所 結晶化膜の形成方法及びその装置
US7136214B2 (en) * 2004-11-12 2006-11-14 Asml Holding N.V. Active faceted mirror system for lithography
DE102005036398A1 (de) * 2005-08-03 2007-02-15 Khs Ag Vorrichtung zum Aufbringen von Banderolen
US8052289B2 (en) * 2006-06-07 2011-11-08 Asml Netherlands B.V. Mirror array for lithography
DE102008054582A1 (de) * 2007-12-21 2009-07-09 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005503018A (ja) * 2001-09-10 2005-01-27 マイクロニック・レーザー・システムズ・エイビー 空間的にコヒーレントな放射ビームの均等化並びに被工作物上のパターンのプリントおよび検査

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200001661A (ko) * 2018-06-27 2020-01-07 삼성디스플레이 주식회사 빔 성형 광학 시스템 및 빔 성형 방법
KR102704440B1 (ko) 2018-06-27 2024-09-09 삼성디스플레이 주식회사 빔 성형 광학 시스템 및 빔 성형 방법

Also Published As

Publication number Publication date
CN103558738B (zh) 2016-06-29
JP5366970B2 (ja) 2013-12-11
EP2238515A1 (en) 2010-10-13
US8891057B2 (en) 2014-11-18
CN103558738A (zh) 2014-02-05
EP2238515B1 (en) 2013-05-01
JP2011507293A (ja) 2011-03-03
DE102008054582A1 (de) 2009-07-09
US20100283985A1 (en) 2010-11-11
CN101946212B (zh) 2013-11-27
KR101681858B1 (ko) 2016-12-12
TWI450049B (zh) 2014-08-21
KR20100107014A (ko) 2010-10-04
US8724086B2 (en) 2014-05-13
KR20150082662A (ko) 2015-07-15
US20100283984A1 (en) 2010-11-11
US20140211188A1 (en) 2014-07-31
US20150177623A1 (en) 2015-06-25
WO2009080279A1 (en) 2009-07-02
TW200935187A (en) 2009-08-16
US10146135B2 (en) 2018-12-04
CN101946212A (zh) 2011-01-12

Similar Documents

Publication Publication Date Title
KR101571181B1 (ko) 마이크로리소그래피 투사 노광 장치
JP5480232B2 (ja) 投影露光系、このような投影露光系の補助により微細構造の構成部材を製造する方法、このような系において使用するために適応させた偏光光学素子
CN105745580B (zh) 微光刻投射曝光设备的照明系统
US7782443B2 (en) Illumination system of a microlithographic projection exposure apparatus
US9804499B2 (en) Illumination system of a microlithographic projection exposure apparatus
JP2004040067A (ja) 焦点検出方法および焦点検出系を備えた結像系
US8451430B2 (en) Illumination optical system, exposure apparatus, and device manufacturing method
US9671699B2 (en) Illumination system of a microlithographic projection exposure apparatus
US8724080B2 (en) Optical raster element, optical integrator and illumination system of a microlithographic projection exposure apparatus
CN116584010A (zh) 用于光学部件对准的装置和方法
US10281823B2 (en) Illumination system of a microlithographic projection exposure apparatus
JP6283476B2 (ja) Ｅｕｖリソグラフィ用の光学アセンブリ
US20050280821A1 (en) Illumination system having a light mixer for the homogenization of radiation distributions
WO2017108448A1 (en) Illumination system of a microlithographic apparatus
JP2017182094A (ja) マイクロリソグラフィ投影露光装置の照明システム

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

A107 Divisional application of patent
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20181118

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20181118

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000