KR101557514B1 - 루테늄 및 탄탈 장벽 ｃｍｐ를 위한 조성물 및 방법 - Google Patents

루테늄 및 탄탈 장벽 ｃｍｐ를 위한 조성물 및 방법 Download PDF

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Publication number
KR101557514B1
KR101557514B1 KR1020107012588A KR20107012588A KR101557514B1 KR 101557514 B1 KR101557514 B1 KR 101557514B1 KR 1020107012588 A KR1020107012588 A KR 1020107012588A KR 20107012588 A KR20107012588 A KR 20107012588A KR 101557514 B1 KR101557514 B1 KR 101557514B1
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South Korea
Prior art keywords
chemical
mechanical polishing
oxidizing agent
ruthenium
polishing composition
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Expired - Fee Related
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KR1020107012588A
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English (en)
Korean (ko)
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KR20100106357A (ko
Inventor
슈티안 리
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캐보트 마이크로일렉트로닉스 코포레이션
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Publication of KR20100106357A publication Critical patent/KR20100106357A/ko
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G55/00—Compounds of ruthenium, rhodium, palladium, osmium, iridium, or platinum
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G55/00—Compounds of ruthenium, rhodium, palladium, osmium, iridium, or platinum
    • C01G55/004—Oxides; Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020107012588A 2007-11-09 2008-11-07 루테늄 및 탄탈 장벽 ｃｍｐ를 위한 조성물 및 방법 Expired - Fee Related KR101557514B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/937,804 2007-11-09
US11/937,804 US20090124173A1 (en) 2007-11-09 2007-11-09 Compositions and methods for ruthenium and tantalum barrier cmp

Publications (2)

Publication Number Publication Date
KR20100106357A KR20100106357A (ko) 2010-10-01
KR101557514B1 true KR101557514B1 (ko) 2015-10-06

Family

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Family Applications (1)

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KR1020107012588A Expired - Fee Related KR101557514B1 (ko) 2007-11-09 2008-11-07 루테늄 및 탄탈 장벽 ｃｍｐ를 위한 조성물 및 방법

Country Status (5)

Country Link
US (1) US20090124173A1 (enrdf_load_stackoverflow)
JP (1) JP5449180B2 (enrdf_load_stackoverflow)
KR (1) KR101557514B1 (enrdf_load_stackoverflow)
TW (1) TWI392727B (enrdf_load_stackoverflow)
WO (1) WO2009064365A2 (enrdf_load_stackoverflow)

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US8008202B2 (en) * 2007-08-01 2011-08-30 Cabot Microelectronics Corporation Ruthenium CMP compositions and methods
JP6050934B2 (ja) 2011-11-08 2016-12-21 株式会社フジミインコーポレーテッド 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法
US8778212B2 (en) 2012-05-22 2014-07-15 Cabot Microelectronics Corporation CMP composition containing zirconia particles and method of use
US20140054266A1 (en) * 2012-08-24 2014-02-27 Wiechang Jin Compositions and methods for selective polishing of platinum and ruthenium materials
CN103897602B (zh) * 2012-12-24 2017-10-13 安集微电子（上海）有限公司 一种化学机械抛光液及抛光方法
US9196283B1 (en) 2013-03-13 2015-11-24 Western Digital (Fremont), Llc Method for providing a magnetic recording transducer using a chemical buffer
WO2015017659A1 (en) * 2013-07-31 2015-02-05 Advanced Technology Materials, Inc. AQUEOUS FORMULATIONS FOR REMOVING METAL HARD MASK AND POST-ETCH RESIDUE WITH Cu/W COMPATIBILITY
US9299585B2 (en) 2014-07-28 2016-03-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing substrates containing ruthenium and copper
WO2016140246A1 (ja) * 2015-03-04 2016-09-09 日立化成株式会社 Ｃｍｐ用研磨液、及び、これを用いた研磨方法
US10937691B2 (en) * 2018-09-27 2021-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming an abrasive slurry and methods for chemical-mechanical polishing
JP7219061B2 (ja) 2018-11-14 2023-02-07 関東化学株式会社 ルテニウム除去用組成物
CN114286846B (zh) 2019-08-30 2023-06-06 圣戈本陶瓷及塑料股份有限公司 用于进行材料去除操作的流体组合物及方法
US11499072B2 (en) 2019-08-30 2022-11-15 Saint-Gobain Ceramics & Plastics, Inc. Composition and method for conducting a material removing operation
CN120041101A (zh) * 2025-02-20 2025-05-27 中国矿业大学(北京) 一种用于芯片高k介质金属栅钌栅平坦化的抛光液及其制备方法与应用

Citations (2)

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JP2006519490A (ja) * 2003-02-27 2006-08-24 キャボット マイクロエレクトロニクス コーポレイション 貴金属のｃｍｐ方法

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US6461227B1 (en) * 2000-10-17 2002-10-08 Cabot Microelectronics Corporation Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition
US7029373B2 (en) * 2001-08-14 2006-04-18 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US6692546B2 (en) * 2001-08-14 2004-02-17 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
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US6705926B2 (en) * 2001-10-24 2004-03-16 Cabot Microelectronics Corporation Boron-containing polishing system and method
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JP2005518090A (ja) * 2002-02-11 2005-06-16 イーケーシー テクノロジー，インコーポレイティド 固体に結合され、ｃｍｐ処方を向上させるために使用されるフリーラジカル形成活性化剤
JP2006519490A (ja) * 2003-02-27 2006-08-24 キャボット マイクロエレクトロニクス コーポレイション 貴金属のｃｍｐ方法

Also Published As

Publication number Publication date
TWI392727B (zh) 2013-04-11
WO2009064365A3 (en) 2009-08-06
JP5449180B2 (ja) 2014-03-19
KR20100106357A (ko) 2010-10-01
TW200938615A (en) 2009-09-16
US20090124173A1 (en) 2009-05-14
WO2009064365A2 (en) 2009-05-22
JP2011503873A (ja) 2011-01-27

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