KR101540409B1 - Facility and method for treating substrate - Google Patents

Abstract

The present invention relates to an apparatus and a method for processing a substrate using a supercritical fluid. The present invention relates to a supercritical fluid supply device having a plurality of mixing members which are supplied with a process gas to be pressurized and a predetermined amount of a process liquid to generate a supercritical fluid of a predetermined concentration, And a process apparatus for removing the substrate. The present invention provides a process chamber in which the mixing members of the supercritical fluid supply system alternately produce a supercritical fluid that satisfies a certain concentration, temperature, and pressure.

Semiconductor, wafer, ashing, ashing, photoresist, supercritical,

Description

[0001] FACILITY AND METHOD FOR TREATING SUBSTRATE [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing facility and method, and more particularly, to a facility for processing a substrate using supercritical fluid and a substrate processing method of the facility.

Typical semiconductor manufacturing processes include processes such as cleaning, coating, deposition, development, ion implantation, chemical mechanical planarization, and etching on a wafer. Among these processes, the etching process is a process for removing unnecessary foreign substances on the wafer surface. The etching process is divided into a dry etching process and a wet etching process. In the dry etching process, various types of process gases are supplied to the wafer surface to remove unnecessary foreign substances on the wafer surface.

Recently, a technique of removing a photosensitive liquid on a wafer surface by using a supercritical fluid is used. An apparatus for removing a photosensitive liquid on a wafer surface using a supercritical fluid includes a chamber. A photoresist removing apparatus using a general supercritical fluid presses the chamber at a constant pressure after positioning the wafer in the chamber during the process. Then, a treatment liquid for removing carbon dioxide and photosensitive liquid is supplied into the chamber to generate supercritical fluid in the chamber to remove the photosensitive liquid on the wafer surface.

However, the apparatus for removing a photosensitizer using such a supercritical fluid has the following problems.

First, the substrate throughput of the device is low. That is, a general photoresist removing apparatus removes a photosensitive liquid on a surface of a wafer by placing a wafer in a chamber, and then generating a supercritical fluid that satisfies predetermined concentrations and temperatures within the chamber. However, it takes a lot of time to produce a supercritical fluid that satisfies a predetermined concentration and temperature in the chamber during the process, and also, since the time required to adjust the pressure inside the chamber to a predetermined pressure is long, .

Second, the process time is increased due to the pressurization time of the chamber. That is, a device for removing a photosensitizer using a general supercritical fluid should adjust the inside of the chamber to a predetermined pressure and temperature every time a single wafer is processed. However, this method increases the processing time because it takes a lot of time to adjust the pressure and temperature of the chamber to predetermined pressure and temperature.

Third, it is difficult to keep the concentration of supercritical fluid constant. That is, a general photoresist removing apparatus supplies a process liquid for removing carbon dioxide and a photoresist to a chamber during a process, thereby generating a supercritical fluid having a predetermined concentration in the chamber. However, in this method, the concentration of the supercritical fluid generated inside the chamber is not constant, and the removal of the photosensitive liquid is made non-uniform.

The present invention provides a substrate processing facility and method for improving substrate throughput of a device.

The present invention provides a substrate processing apparatus and method for improving a photoresist removing efficiency.

The present invention provides a substrate processing facility and method for maintaining a constant concentration of supercritical fluid.

According to an aspect of the present invention, there is provided a substrate processing apparatus including a process chamber for performing a substrate processing process, and a supercritical fluid supply device for supplying a supercritical fluid generated in the process chamber by generating a supercritical fluid, , The supercritical fluid supply device includes a processing gas supply member for supplying a process gas, a process liquid supply member for supplying the process liquid, and a process gas supply member for supplying the process gas and the process liquid from the process gas supply member and the process liquid supply member, And includes a plurality of mixing members.

According to an embodiment of the present invention, each of the mixing members includes a production vessel for providing a space for generating a supercritical fluid therein, a heater for heating the housing, and a stirrer for mixing the processing gas and the processing solution in the housing do.

According to the embodiment of the present invention, the treatment liquid supply member includes a treatment liquid supply source for storing the treatment liquid, a treatment liquid supply line for supplying the treatment liquid from the treatment liquid supply source to the production vessel, And a second pressure member for pressurizing the treatment liquid which is moved along the treatment liquid supply line.

According to an embodiment of the present invention, the process chamber is provided with a space for performing a process of processing a substrate therein, a housing provided with a substrate inlet and a substrate opening on a side wall thereof, a support member for supporting the substrate, And a driving member for driving the supporting member up and down, wherein the driving member includes a processing position in which the upper surface of the supporting member is located at a position higher than the height of the substrate entry / The substrate is moved between standby positions located at positions lower than the height of the substrate entry / exit port.

According to an embodiment of the present invention, the process chamber further comprises a fixing member for physically fixing the support member to the housing when the support member is located at the process position, And a driver for linearly reciprocating the fixed block.

According to another aspect of the present invention, there is provided a substrate processing method comprising: supplying a processing solution for removing the photosensitive liquid to a plurality of production vessels, The gas is heated to a predetermined temperature to produce a supercritical fluid and supply it to the process chamber, wherein the supercritical fluid supply of the production vessels alternates.

According to an embodiment of the present invention, supercritical fluid supply of the production vessels is such that when one of the production vessels supplies a supercritical fluid to the process chamber, another production vessel of the production vessels receives the supercritical fluid .

The substrate processing apparatus and method according to the present invention shortens the substrate processing time and improves the substrate throughput of the apparatus.

The substrate processing equipment and method according to the present invention efficiently removes the photosensitive liquid formed on the wafer surface.

The substrate processing equipment and method according to the present invention maintains the concentration of the supercritical fluid constant at a predetermined concentration value.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described here, but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that the disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like numbers refer to like elements throughout the specification.

Also, in this embodiment, an ashing process device for removing a photosensitive solution on a wafer surface by supplying a supercritical fluid to a semiconductor wafer has been described as an example, but the present invention is applicable to all devices for processing a substrate.

(Example)

FIG. 1 is a view showing a substrate processing facility according to the present invention, and FIG. 2 is a view showing a process chamber shown in FIG. 3 is a view showing a process chamber according to another embodiment of the present invention.

Referring to FIG. 1, a facility for treating substrate 1 according to the present invention performs a process of processing a semiconductor substrate (hereinafter referred to as a "wafer") W. The substrate processing apparatus 1 has a super-crytical fluid supply apparatus 10 and a process apparatus 20.

The supercritical fluid supply device 10 generates supercritical fluid necessary for removing the photosensitive liquid on the surface of the wafer W and supplies the supercritical fluid to the processing apparatus 20. Each supercritical fluid supply 10 includes a treating gas supply member 12, a treatment liquid supply source 14 and a plurality of mixing members 16A , 16B, 16C.

The process gas supply member 12 supplies the process gas to the respective mixing members 16A, 16B, and 16C. The process gas supply member 12 has a treating gas supply source 12a, a treating gas supply line 12b, and a first presurization member 12c .

The process gas supply source 12a stores the process gas. The process gas supply source 12a stores the process gas therein, and the process gas is supplied to the respective mixing members 16A, 16B, and 16C through the process gas supply line 12b in the process. Here, the process gas is a gas pressurized at a high pressure to pressurize the process liquid. As the process gas, carbon dioxide (CO2) may be used.

The process gas supply line 12b supplies the process gas from the process gas supply source 12a to each of the mixing members 16. One end of the process gas supply line 12b is connected to the process gas supply source 12a and the other end of the process gas supply line 12b is connected to each of the mixing members 16A, 16B and 16C.

The first pressure member 12c pressurizes the process gas flowing in the process gas supply line 12b. As the first pressing member 12c, a pump is used. The first pressing member 12c presses the process gas to a high pressure to propel the process liquid supplied to the respective mixing members 16A, 16B and 16C. Therefore, the processing liquid supplied to the mixing members 16A, 16B, 16C in the process is propelled by the processing gas to reach the pressure for satisfying the supercritical fluid condition.

The treatment liquid supply member 14 supplies the treatment liquid to each of the mixing members 16A, 16B and 16C. Here, the treatment liquid is a liquid for removing photoresist on the surface of the wafer W. As the treatment liquid, at least one of hydrofluoric acid (HF) or various kinds of organic solvents is used.

The treatment liquid supply member 14 has a treatment liquid supply source 14a and a treatment liquid supply line 14b and a second pressurization member 14c .

The treatment liquid supply source 14a stores the treatment liquid and the treatment liquid supply line 14b supplies the treatment liquid from the treatment liquid supply source 14a to the mixing members 16A, 16B and 16C. The second pressing member 14c applies the flow pressure to the processing liquid flowing along the processing liquid supply line 14b. At this time, the second pressing member 14c pressurizes the processing solution so that the pressure for the supercritical state is reached when the processing liquid supplied to the mixing members 16A, 16B, 16C is supplied into the mixing member 16 do.

The second pressurizing member 14c is arranged in such a manner that the process liquid supplied to each of the mixing members 16A, 16B and 16C during the process is supplied to the mixing members 16A, 16B and 16C by a predetermined flow rate, And controls the flow rate of the processing liquid flowing along the line 14b. That is, the process gas and the process liquid supplied to the mixing members 16A, 16B, and 16C in the process are mixed to form a supercritical fluid having a predetermined concentration, so that the second pressure member 14c is mixed with the mixing members 16A and 16B , 16C are adjusted so that the concentration of supercritical fluid produced in each of the mixing members 16A, 16B, 16C satisfies a predetermined concentration.

Each of the mixing members 16A, 16B, and 16C supplies the process gas and the process liquid from the process gas supply member 12 and the process liquid supply member 14, respectively, and mixes them to produce a supercritical fluid. At this time, a plurality of mixing members are provided, and each of the mixing members has substantially the same configurations. Therefore, in this embodiment, the configurations of any one of the mixing members 16A will be described in detail.

The mixing member 16A includes a generating vessel 16a, a heater 16b, an agitator 16c, and a supercritical-fluid supply line 16d do.

The production vessel 16a provides a space for receiving the processing gas and the processing liquid therein. The production vessel 16a is connected to the processing gas supply line 12b and the processing liquid supply line 14b at one side 16a 'and to the supercritical fluid supply line 16d at the other side 16a' '.

The heater 16b heats the inside of the production container 16a. The heater 16b is installed around the production container 16a. At this time, the heater 16b heats the production container 16a so that the treatment liquid in the production container 16a is maintained in the supercritical state.

The agitator 16c mixes the process gas and the process liquid injected into the production container 16a. The agitator 16c includes a plurality of blades 16c 'and a drive motor 16c' '. In the process, the driving motor 16c '' rotates the blades 16c 'at a constant rotation speed, and the processing gas and the processing liquid in the production container 16a are mixed by the rotating blades 16c' do.

The supercritical fluid supply line 16d supplies supercritical fluid to the process chamber 100 of the process chamber 20 from the production vessel 16a. One end of the supercritical fluid supply line 16d is connected to the other side 16a '' of the production container 16a and the other end is connected to the process chamber 100. [

The processing apparatus 20 performs a process of receiving the supercritical fluid from the supercritical fluid supply apparatus 10 and processing the wafer W. [ The process apparatus 20 has at least one process chamber 100. When a plurality of process chambers 100 are provided, each of the process chambers 100 performs the same substrate processing process. Alternatively, alternatively, each process chamber 100 may perform a different substrate processing process.

In the present embodiment, three mixing members 16A, 16B, and 16C supply supercritical fluid to one process chamber 100. However, the number of mixing members and process chambers may vary It is possible.

Next, the process chamber 100 according to the present invention will be described in detail. Referring to FIG. 2, the process chamber 100 performs an ashing process for removing the photosensitive liquid on the surface of the wafer W. Referring to FIG. The process chamber 100 includes a housing 110, an exhaust member 120, a support member 130, a driving member 140, ) ≪ / RTI >

The housing 110 provides a space for performing a process of removing unnecessary photosensitive liquid on the surface of the wafer W. [ The housing 110 has a cylindrical shape with its bottom opened. The housing 110 consists of a side wall 112 and a top wall 114. The side wall 112 is provided with an entrance 112a for loading the wafer W into the housing 110 during processing. On the inner side surface of the side wall 112, a fixing groove 112b is formed. The fixing groove 112b is a groove for inserting the fixing block 152 to be described later in the process. A discharge passage 112c is provided at one side of the side wall 112 of the housing 110. [ The discharge passage 112c discharges the gas in the housing 110 from the housing 110 during the process. It is preferable that the discharge passage 112c is formed at a height corresponding to the height of the wafer W during the ashing process. This is so that the supercritical fluid supplied to the surface of the wafer W during the ashing process can be easily discharged from the housing 110.

A supply passage 114a is formed in the upper wall 114 of the housing 110. The feed passage 114a feeds the supercritical fluid supplied through the supercritical fluid feed line 16d into the housing 110 in the process.

In this embodiment, one supply passage 114a is vertically formed as an example. However, the number and angle of the supply passage 114a can be variously changed and modified. In this embodiment, the supply passage 114a is provided in the upper wall 114 of the housing 110. However, the position of the supply passage can be variously changed and modified. That is, as another embodiment of the present invention, the supply passage 112d may be provided in the side wall 112 of the housing 110, as shown in Fig. In this case, it is preferable that the supply passage 112d and the discharge passage 112c are provided so as to face each other at the same height. This is because the supercritical fluid supplied to the housing 110 effectively moves toward the discharge passage 112c after removing the photosensitive liquid on the surface of the wafer W. [

Exhaust member 120 drains gas (e.g., supercritical fluid) from housing 110 in housing 110 during processing. The exhaust member 120 has a discharge line 122 and a flow control valve 124. The discharge line 122 is connected to the discharge passage 112c to discharge the supercritical fluid supplied into the housing 110 during processing. The flow control valve 124 regulates the supercritical fluid discharge of the discharge line 122. Particularly, the flow rate control valve 124 regulates the discharge amount of the supercritical fluid in the housing 110 so that the supercritical fluid supplied into the housing 110 during the ashing process moves with a constant flow inside the housing 110 .

The support member 130 supports the wafer W within the housing 110 during processing. In addition, the support member 130 opens and closes the open lower portion of the housing 110. The support member 130 has a generally cylindrical shape. The support member 130 has an upper surface for supporting the wafer W and is installed to be inserted into the open lower center of the housing 110. When the support member 130 is inserted into the open lower center of the housing 110 in the process, the inner space of the housing 110 is sealed to the outside. To this end, sealing means such as an o-ring may be provided on the inner surface of the housing 110, which is in contact with the support member 130 during the ashing process.

The driving member 140 includes a support 141, an elevating part 142, an up / down plate 144, and a guide shaft 146. The support 141 is a support plate for supporting the structures of the driving member 140. The elevator 142 and the guide 146 are fixed to the support 141. The elevator 142 has an elevation shaft 142a that is vertically moved up and down. The upper end of the lifting shaft 142a is engaged with the lower portion of the up / down plate 144. The up / down plate 144 is fixedly coupled to the lower portion of the support member 130. The up / down plate 144 is lifted up by an elevator 142. Guide 146 is provided to up / down plate 144, respectively, to guide up / down operation of up / down plate 144. The guide 146 is installed vertically up and down. The upper end of the guide 146 is fixed to the housing 110, and the lower end is fixed to the support 141.

Further, the driving member 140 moves the supporting member 130 between the process position (reference numeral (a) in FIG. 5B) and the standby position (b). The wafer W is transferred to the housing 110 before the photoresist removing process is performed. The wafer W is transferred to the housing 110 through the housing 110, And the position of the support member 130 for waiting outside. The height of the upper surface 132 of the support member 130 is located at a position higher than the height of the substrate entrance 112a of the housing 110 when the support member 130 is positioned at the process position a. Therefore, the space inside the housing 110 is completely sealed by closing the substrate entrance 112a by the supporting member 130. [ The height of the upper surface 132 of the support member 130 is located at a height lower than the height of the substrate entrance 112a of the housing 110. In this case, Therefore, the space inside the housing 110 is opened by opening the substrate entry / exit port 112a by the support member 130.

The fixing member 150 fixes the supporting member 130 to the housing 110 in the process. The fixing member 150 includes a fixing block 152 and a driving part 154. The fixed block 152 is disposed under the support member 130. The fixed block 152 is moved to the left and right by the driver 154. At least one fixed block 152 is provided. When a plurality of fixed blocks 152 are provided, each of the fixed blocks 152 is disposed at even intervals with respect to the center of the supporting member 130.

The actuator 154 moves the fixed block 152 between the fixed position (reference numeral p1 in Fig. 5C) and the standby position p2. The fixing position p1 is a position where the supporting member 130 is positioned at the process position a and the fixing block 152 is inserted into the fixing groove 112b formed in the side wall 112 of the housing 110, (152). The supporting member 130 is completely fixed to the housing 110 when the fixing block 152 is inserted into the fixing groove 112b and is positioned at the fixing position p1. The standby position p2 is set so that the up block operation of the support member 130 is not disturbed by the fixed block 152 when the support member 130 is moved between the standby position b and the process position a And the position of the fixed block 154 provided. When the fixed block 152 is positioned at the standby position p2, the side surface 154a of the fixed block 152 is positioned inside the side surface of the supporting member 130. [

Hereinafter, the process of the substrate processing apparatus 1 will be described in detail. 4 is a flowchart showing a process of a substrate processing apparatus according to the present invention. 5A to 5F are views for explaining a process of a substrate processing apparatus according to the present invention. 6A to 6C are diagrams for explaining a supercritical fluid supply process of the supercritical fluid supply apparatus according to the present invention.

When the process starts, the supercritical fluid production chamber 10 generates a supercritical fluid, and the process chamber 20 receives the supercritical fluid from the supercritical fluid supply chamber 10 to process the wafer W .

Referring to FIG. 4, the wafer W is loaded on the support member 130 of the process chamber 10 (S100). 5A and 5B, the wafer W is placed on the support member 130 located at the standby position b by the robot arm (not shown). When the wafer W is placed on the supporting member 130, the elevator 142 of the driving member 140 raises the elevation shaft 142a to raise the up / down plate 144. Due to the rise of the up / down plate 144, the support member 130 is moved from the standby position b to the process position a. The upper surface 132 of the support member 130 is located at a position higher than the height of the entrance 112c when the support member 130 is located at the process position a. Therefore, the substrate entry / exit port 112a is completely sealed by the support member 130.

When the support member 130 is positioned at the process position (a), the support member 130 is fixed to the housing 110 (S200). 5C, the actuator 154 of the fixing member 150 moves the fixing block 152 from the standby position p2 to the fixed position p1. When the fixed block 152 is moved to the fixed position p1, the fixed block 152 is inserted into the fixed groove 112b formed in the housing 110. [ When the fixing block 152 is inserted into the fixing groove 112b, the supporting member 130 is completely fixed to the housing 110. [

When the support member 130 is completely fixed to the housing 110, the supercritical fluid supply device 10 may be provided with any one of the mixing members 16A, 16B, and 16C that generate a supercritical fluid satisfying predetermined concentrations and temperatures A supercritical fluid is supplied from one mixing member to the process chamber 100 (S300). The process of supplying the supercritical fluid alternately with the mixing members 16A, 16B, 16C of the supercritical fluid supply apparatus 10 will be described later.

The processing apparatus 100 receives the supercritical fluid from the supercritical fluid generating apparatus 10 and removes the sensitizing solution on the surface of the wafer W (S400). That is, referring to 5d, the supercritical fluid supply line 16d supplies the supercritical fluid from the first mixing member 16 to the housing 110. [ At this time, the supercritical fluid supplied into the housing 110 through the supply passage 114a of the housing 110 is supplied toward the wafer W placed on the support member 130. The supercritical fluid supplied to the wafer W removes the photosensitive liquid on the wafer W surface.

At this time, the exhaust member 120 regulates the pressure in the housing 110. That is, by the pressurized supercritical fluid supplied to the housing 110 during the ashing process, the inside of the housing 110 is pressurized to a high pressure. Accordingly, in the process, the exhaust member 120 causes the pressure inside the housing 110 to maintain a predetermined pressure. For example, if the predetermined pressure of the housing 110 is 290 bar, the exhaust member 120 may open the flow control valve 124 to open the discharge line 122 when the internal pressure of the housing 110 exceeds 290 bar Thereby discharging the supercritical fluid in the housing 110, thereby reducing the internal pressure of the housing 110. Then, when the pressure in the housing 110 again drops to 290 bar or less, the flow control valve 124 is closed.

In addition, during the ashing process, the flow rate regulating member 124 of the exhaust member 120 may control the flow rate of the supercritical fluid moving in the housing 110 during the process. For example, the flow rate regulating member 124 may control the amount of supercritical fluid discharged through the discharge line 122 in the process so that the supercritical fluid moving within the housing 110 is discharged through the discharge passage 112c The supercritical fluid in the housing 110 can be removed from the surface of the wafer W while being moved at a constant speed from the supply passage 114a to the discharge passage 112c during the ashing process.

When the photosensitive liquid is removed from the surface of the wafer W, unloading of the wafer W is performed (S500). 5E and 5F, the supply of the supercritical fluid is stopped and the actuator 154 of the fixing member 150 moves the fixed block 152 from the fixed position p1 to the standby position p2 . The elevator 142 of the driving member 140 moves down the up / down plate 144 to move the supporting member 130 from the processing position a to the standby position b. When the support member 130 is positioned at the standby position b, the robot arm (not shown) unloads the wafer W from the support member 130 and takes it out to a facility where a subsequent process is performed.

Next, a supercritical fluid supply method of the supercritical fluid supply apparatus 10 according to the present invention will be described in detail. When the wafer W is loaded into the process chamber 100, any one of the mixing members 16, ready to be supplied with the supercritical fluid, supplies the supercritical fluid to the process chamber 100 S300).

Referring to FIG. 6A, supercritical fluid supply device 10 opens valve V3 and supplies supercritical fluid in first mixing member 16A to process chamber 100. Referring to FIG. At this time, the second mixing member 16B is in the supply standby state after generating the supercritical fluid satisfying the predetermined concentration and temperature. The third mixing member 16B receives the process gas and the process liquid from the process gas supply member 12 and the process liquid supply member 14, respectively, to generate a supercritical fluid. That is, the valve V7 is opened and the first pressure member 12c is operated so that the process gas supply line 12b is moved from the process gas supply source 12a to the production container 16a of the third mixing member 16c Gas is supplied. The valve V8 is opened so that the second pressurizing member 14c is operated so that the process liquid supply line 14b is moved from the process liquid supply source 14a to the production container 16a of the third mixing member 16c, .

The production container 16a of the third mixing member 16c mixes and heats the supplied process gas and process liquid. That is, the processing liquid supplied to the production vessel 16a is propelled by the processing gas to be sprayed into the production vessel 16a, and the processing liquid supplied to the production vessel 16a is heated by the heater 16b, . Therefore, the third mixing member 16c waits after generating the supercritical fluid satisfying the preset concentration and temperature.

When the photosensitive liquid is removed from the surface of the wafer W, a new wafer W is loaded into the process chamber 100 after the wafer W is unloaded from the process chamber 100. Referring to FIG. 6B, the process chamber 100 receives the supercritical fluid from the second mixing member 16B of the supercritical fluid supply device 10 and removes the sensitizing solution on the surface of the new wafer W. Referring to FIG. That is, the valve (V6) is opened and the second mixing member (16B), which is in the supercritical fluid supply ready state, supplies the supercritical fluid to the process chamber (100). At this time, while the second mixing member 16B supplies the supercritical fluid, the first mixing member 16A produces a supercritical fluid satisfying a preset concentration and temperature.

Thereafter, when the photosensitive liquid removing process of the process chamber 100 is completed, the wafer W is taken out of the process chamber 100 and then another new wafer W is loaded again. When another new wafer W is loaded into the process chamber 100, the supercritical fluid supply device 100 opens the valve V9, as shown in FIG. 6c, To allow the third mixing member 16C in the chamber 100 to supply supercritical fluid to the process chamber 100. At this time, while the third mixing member 16C supplies the supercritical fluid, the second mixing member 16B generates a supercritical fluid satisfying a preset concentration and temperature.

The present invention is characterized in that the supercritical fluid supply device 100 includes a plurality of mixing members 16 so that each of the mixing members 16 alternately supplies supercritical fluid to the process chamber 100 Proceed with the process. Thus, the supercritical fluid supply 10 prevents the process from ceasing while producing a supercritical fluid, thereby improving the substrate throughput of the device.

In addition, since the pressurized supercritical fluid is directly supplied to the inside of the housing 110, the pressure inside the housing 110 can be rapidly increased to a preset pressure, Thereby shortening the substrate processing time.

The foregoing detailed description is illustrative of the present invention. It is also to be understood that the foregoing is illustrative and explanatory of preferred embodiments of the invention only, and that the invention may be used in various other combinations, modifications and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, the disclosure and the equivalents of the disclosure and / or the scope of the art or knowledge of the present invention. The foregoing embodiments are intended to illustrate the best mode contemplated for carrying out the invention and are not intended to limit the scope of the present invention to other modes of operation known in the art for utilizing other inventions such as the present invention, Various changes are possible. Accordingly, the foregoing description of the invention is not intended to limit the invention to the precise embodiments disclosed. It is also to be understood that the appended claims are intended to cover such other embodiments.

1 is a view showing a substrate processing apparatus according to the present invention.

FIG. 2 is a view showing the process chamber shown in FIG. 1. FIG.

3 is a view showing a process chamber according to another embodiment of the present invention.

4 is a flowchart showing the process of the substrate processing apparatus according to the present invention.

5A to 5F are views for explaining a process of a substrate processing apparatus according to the present invention.

6A to 6C are views for explaining the supercritical fluid supply process of the supercritical fluid supply apparatus according to the present invention.

Description of the Related Art [0002]

1: substrate processing apparatus

10: supercritical fluid production chamber

20: Process Room

100: Process chamber

110: Housing

120: exhaust member

130: Support member

140:

150: Fixing member

Claims (7)

In an apparatus for processing a substrate, A process chamber for performing a substrate processing process, And a supercritical fluid supply device for generating a supercritical fluid to supply the supercritical fluid produced in the process chamber, Wherein the supercritical fluid supply device comprises: A processing gas supply member for supplying a processing gas, A processing liquid supply member for supplying the processing liquid, A plurality of mixing members for receiving the process gas and the process liquid from the process gas supply member and the process liquid supply member, respectively, The process chamber includes: A housing for providing a space for performing a process of processing a substrate therein, a housing provided with a substrate inlet and a lower opening on a side wall thereof, A support member for supporting the substrate and inserted into the open lower portion of the housing, and Wherein the support member is moved up and down so that the upper surface of the support member is located at a position higher than the height of the substrate entrance port and a process position where the upper surface of the support member is positioned at a position lower than the height of the substrate entrance, A driving member for moving the driving member; And And a fixing member for physically fixing the supporting member to the housing when the supporting member is located at the processing position, Wherein: A fixing block inserted into a groove formed in the inner surface of the housing at the time of the process, And a driver for reciprocating the fixed block linearly. The method according to claim 1, Wherein each of the mixing members comprises: A generating vessel for providing a space for generating a supercritical fluid therein, A heater for heating the housing, and And a stirrer for mixing the processing gas and the processing liquid in the housing. 3. The method of claim 2, Wherein the treatment liquid supply member A treatment liquid supply source for storing treatment liquid, A processing liquid supply line for supplying the processing liquid from the processing liquid supply source to the production vessel, and And a second pressing member that is provided on the processing liquid supply line and presses the processing liquid which is moved along the processing liquid supply line. delete delete A method for processing a substrate using the substrate processing apparatus of claim 1, The processing liquid and the processing gas for removing the photosensitive liquid on the substrate are supplied to the plurality of mixing members, Wherein the process liquid and the process gas supplied to the plurality of mixing members are heated to a predetermined temperature to generate a supercritical fluid, Wherein the supercritical fluid generated in the plurality of mixing members is supplied to the process chamber, Supplying the supercritical fluid to the process chamber Wherein the plurality of mixing members alternately supply the supercritical fluid to the process chamber. The method according to claim 6, Wherein the plurality of mixing members alternately supply the supercritical fluid to the process chamber, Supplying the supercritical fluid produced from the mixing member of any one of the plurality of mixing members to the process chamber and waiting for remaining mixing members, And supplying the process liquid and the process gas to the mixing member, in which the supercritical fluid is exhausted, of the remaining mixing members to generate the supercritical fluid.

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