KR100885496B1 - Supercritical fluid generating apparatus, and facility and method for treating substrate with the same - Google Patents

Abstract

The present invention relates to a supercritical fluid generating device and a substrate processing apparatus and method having the same. Substrate processing equipment according to the present invention is a supercritical fluid generating device for generating a supercritical fluid of a certain concentration by receiving a pressurized processing gas and a predetermined amount of processing liquid, and the photosensitive liquid remaining on the wafer by receiving the generated supercritical fluid It includes a process chamber to remove. The present invention generates a supercritical fluid that satisfies a certain concentration during the process is supplied to the process chamber, the supercritical fluid supplied to the process chamber is moved at a constant speed inside the process chamber to remove the photosensitive liquid on the wafer surface.

Semiconductor, photoresist, etching, etching, supercritical, supercritical fluid,

Description

Supercritical fluid generating apparatus, and substrate processing equipment and method including the same {SUPERCRITICAL FLUID GENERATING APPARATUS, AND FACILITY AND METHOD FOR TREATING SUBSTRATE WITH THE SAME}

1 shows a substrate processing facility according to the present invention.

2 is a flow chart showing a substrate processing method according to the present invention.

3 is a flow chart showing a supercritical fluid generation process of the supercritical fluid generating device according to the present invention.

4 is a view for explaining the process of the substrate processing equipment according to the present invention.

5A to 5C are views for explaining a process of removing a photoresist on the surface of a wafer according to the present invention.

6 and 7 are views for explaining the process of the substrate processing equipment according to another embodiment of the present invention.

* Description of symbols on the main parts of the drawings *

10: substrate processing equipment

100: process room

110: chamber

120: support member

130: drive member

140: exhaust member

200: supercritical fluid generating device

210: processing gas supply member

220: treatment liquid supply member

230: mixing member

The present invention relates to a supercritical fluid generating apparatus, and a substrate processing equipment and method including the same, and more particularly, to an apparatus for generating a supercritical fluid, and an apparatus and a substrate provided with the apparatus to remove foreign substances from the surface of the substrate. It relates to a processing method.

Typical semiconductor fabrication processes include processing on the wafer, such as cleaning, applying, depositing, developing, ion implantation, chemical mechanical leveling, and etching. Among these treatment processes, an etching process is a process of removing unnecessary foreign substances on the wafer surface. The etching process is divided into a dry etching process and a wet etching process. Among them, the dry etching process supplies various kinds of processing fluids (especially, processing gases) to the wafer surface to remove unnecessary foreign substances on the wafer surface.

Recently, a technique of removing photoresist on the wafer surface using a supercritical fluid is used. An apparatus for removing the photoresist on the wafer surface using a supercritical fluid has a chamber. In general, a photoresist removal apparatus using a supercritical fluid pressurizes the pressure chamber to a predetermined pressure after placing the wafer inside the pressure chamber during the process. Then, a processing liquid for removing carbon dioxide and a photosensitive liquid is supplied into the pressure chamber to generate a supercritical fluid within the pressure chamber to remove the photosensitive liquid on the wafer surface.

However, the photoresist removal apparatus using such a supercritical fluid has the following problems.

First, the removal efficiency of the photosensitive liquid is low. In general, an ion implantation process is performed on a wafer before performing photoresist removal. However, after the ion implantation process, the photoresist surface is hardened. The hardened photoresist is hard to remove by normal supercritical fluid supply.

Second, it is difficult to keep the concentration of supercritical fluid constant. That is, a device for removing the photoresist using a general supercritical fluid supplies a supercritical carbon dioxide and a treatment liquid for removing the photoresist to the pressure chamber during the process to generate a supercritical fluid that satisfies a predetermined concentration. However, the method of generating supercritical fluid by directly supplying the carbon dioxide and the treatment liquid to the pressurized chamber has a non-uniform concentration of the generated supercritical fluid, resulting in uneven photoresist removal.

Third, the process time is increased by the time according to the pressurization of the pressure chamber. In other words, the apparatus for removing the photoresist using a general supercritical fluid should adjust the inside of the pressurizing chamber to a predetermined pressure and temperature each time a single wafer is processed. However, this method increases process processing time because much time is spent adjusting the pressure and temperature of the pressure chamber to a predetermined pressure and temperature.

An object of the present invention is to provide a supercritical fluid generating device for improving the photoresist removal efficiency and a substrate processing equipment and method having the same.

An object of the present invention is to provide a supercritical fluid generating device for maintaining a constant concentration of the supercritical fluid, and a substrate processing equipment and method having the same.

An object of the present invention is to provide a supercritical fluid generating device for shortening the process time and a substrate processing equipment and method having the same.

Supercritical fluid generating apparatus according to the present invention for achieving the above object is a processing gas supply member for supplying a processing gas, a processing liquid supply member for supplying a processing liquid, and the processing gas supply member and the processing liquid supply member, respectively And a mixing member receiving a processing gas and a processing liquid from the housing, wherein the mixing member includes a housing providing a space for generating a supercritical fluid therein, a heater for heating the housing, and a processing gas and a processing liquid in the housing. A stirrer to mix.

According to an embodiment of the present invention, the treatment gas includes carbon dioxide and the treatment liquid includes at least one of hydrofluoric acid or an organic solvent.

According to an embodiment of the present invention, the processing liquid supply member is installed in a processing liquid supply source for storing the processing liquid, a processing liquid supply line for supplying the processing liquid from the processing liquid supply source to the production container, and the processing liquid supply line. And a second pressing member pressurizing the processing liquid moved along the processing liquid supply line, wherein the second pressing member is a metering pump for supplying the processing liquid by a predetermined amount.

According to an embodiment of the present invention, the supercritical fluid generating device includes a temperature measuring device for measuring the temperature of the supercritical fluid in the production container, a concentration measuring device for measuring the concentration of the supercritical fluid in the production container, and the temperature measuring device. And a controller for receiving the temperature data and the concentration data measured by the concentration meter, respectively, to control the second pressurizing member and the heater.

Substrate processing equipment according to the present invention for achieving the above object includes a process chamber for processing a substrate and a supercritical fluid generating device for supplying the supercritical fluid generated to the process chamber by generating a supercritical fluid, the process The chamber includes a chamber for providing a space for processing the substrate therein and a support member material for supporting the substrate within the chamber during processing, the chamber including an upper wall and a side wall, the side wall from the supercritical fluid generating device. And one side wall on which a supply passage for receiving the supercritical fluid is formed and the other side wall on which a discharge passage for discharging the supplied supercritical fluid to the outside is formed.

According to an embodiment of the present invention, the supply passage and the discharge passage are opposed to each other, the supply passage is provided so that the supercritical fluid supplied to the chamber during the process is supplied in a direction parallel to the substrate placed on the support member .

According to an embodiment of the present invention, the substrate processing apparatus further includes an exhaust member for discharging the fluid in the chamber to the outside of the chamber during the process, the exhaust member is connected to the discharge passage in the process supercritical in the chamber And a flow rate adjusting member installed at the discharge line for discharging the fluid to the outside and the discharge of the supercritical fluid discharged along the discharge line.

According to an embodiment of the present invention, the supercritical fluid generating apparatus includes a processing gas supply member for supplying a processing gas, a processing liquid supply member for supplying a processing liquid, and a processing gas supply member and the processing liquid supply member, respectively. And a mixing member receiving a gas and a processing liquid, wherein the mixing member mixes a housing providing a space for generating a supercritical fluid therein, a heater for heating the housing, and a processing gas and a processing liquid in the housing. A stirrer.

According to an embodiment of the present invention, the processing liquid supply member is installed in a processing liquid supply source for storing the processing liquid, a processing liquid supply line for supplying the processing liquid from the processing liquid supply source to the production container, and the processing liquid supply line. And a second pressing member pressurizing the processing liquid moved along the processing liquid supply line, wherein the second pressing member is a metering pump for supplying the processing liquid by a predetermined amount.

According to an embodiment of the present invention, the supercritical fluid generating device includes a temperature measuring device for measuring the temperature of the supercritical fluid in the production container, a concentration measuring device for measuring the concentration of the supercritical fluid in the production container, and the temperature measuring device. And a controller for receiving the temperature data and the concentration data measured by the concentration meter, respectively, and controlling the second pressurizing member and the heater. The controller may include a controller in which the concentration value measured by the concentration meter exceeds a predetermined concentration value. The second pressurizing member is controlled to reduce the amount of the processing liquid supplied to the production container, and when the concentration value measured by the concentration meter is less than or equal to a predetermined concentration value, the amount of the processing liquid supplied to the production container is increased. The second pressing member is controlled to increase.

The substrate processing method according to the present invention for achieving the above object is to generate a supercritical fluid, and to remove the foreign matter on the surface of the substrate by supplying the generated supercritical fluid in a direction parallel to the processing surface of the substrate.

According to an embodiment of the present invention, the supercritical fluid supplied to the substrate removes the foreign matter while moving from one side of the substrate to the other side.

According to an embodiment of the present invention, the supercritical fluid movement from one side of the wafer to the other side opens a chamber in which the process of removing the foreign matter is performed during the process, and the supercritical fluid supplied to the chamber is discharged from the chamber. By doing so.

According to an embodiment of the present invention, the generation of the supercritical fluid is to propel the treatment liquid to a predetermined pressure by the treatment gas for propelling the treatment liquid to remove the foreign matter, the propelled treatment liquid It is made by heating to a predetermined temperature, the propulsion of the treatment liquid is made in a production vessel that receives the treatment gas and the treatment liquid to generate the supercritical fluid, the removal of the foreign matter is the substrate inside the process The processing liquid is made in a chamber located, the supply amount is adjusted before being supplied to the production container so that a predetermined amount is supplied to the production container.

According to an embodiment of the present invention, the pressure of the production vessel is higher than the pressure of the chamber before supplying the supercritical fluid to the chamber, and the pressure of the chamber after supplying the supercritical fluid to the chamber. Do.

According to another embodiment of the present invention, the foreign material removal is made in a chamber having a space for receiving a supercritical fluid therein to remove the foreign matter on the surface of the substrate, the substrate processing method is the supercritical fluid is the chamber It is made by selectively performing a first method of removing the foreign matter while moving from one side of the substrate to the other inside and a second method of removing the foreign matter in a state in which the supercritical fluid is stagnant in the chamber.

According to another embodiment of the present invention, the selective implementation of the first and second schemes is carried out depending on whether or not the supercritical fluid in the chamber is discharged from the chamber during the process.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed subject matter is thorough and complete, and that the spirit of the invention will be fully conveyed to those skilled in the art. Portions denoted by like reference numerals denote like elements throughout the specification.

In addition, in the present embodiment, a device for removing a photoresist on the surface of a wafer by supplying a supercritical fluid to a semiconductor wafer has been described as an example, but the present invention can be applied to all equipment and methods for treating a substrate using a supercritical fluid. Do.

(Example)

1 shows a substrate processing facility according to the present invention. Referring to FIG. 1, a substrate processing apparatus 10 according to the present invention includes a process room 100 and a supercritical-fluid generating apparatus 200.

The process chamber 100 processes a semiconductor substrate (hereinafter referred to as "wafer") W. At least one process chamber 100 is provided. The process chamber 100 includes a chamber 110, a support member 120, a driving member 130, and an exhaust member 140.

The chamber 110 provides a space therein for performing a process of removing unnecessary photoresist on the surface of the wafer (W). Chamber 110 has a generally cylindrical shape with an open bottom. Chamber 110 has a top wall 112 and a side wall 114. A supply passage 114a 'is formed in one side wall 114a of the chamber 110 to supply a supercritical fluid into the chamber 110 during the process, and the other side wall facing the one side wall 114a. A discharge passage 114b 'is formed at 114b for discharging the supercritical fluid in the chamber 110 during the process. The supply passage 114a ′ is provided to supply the supercritical fluid in a direction parallel to the processing surface of the substrate W placed on the support member 120 during the process. For example, the supply passage 114a 'is provided at a height similar to the height of the wafer W placed on the support member 120 during the process, and thus supercritical in the same direction parallel to the processing surface of the wafer W during the process. Supply the fluid.

The support member 120 supports the wafer W in the chamber 110 during the process. The support member 120 has a support body. The support has a generally cylindrical shape. The support has an upper surface for supporting the wafer W and is installed to be inserted into or separated from the opening formed in the lower center of the chamber 110.

The drive member 130 moves the support member 120 between the process position (a) and the standby position (b). The process position (a) is the position of the support member 120 for performing the process of removing the photoresist on the wafer surface, and the standby position (b) moves the wafer (W) to the chamber 110 before the photoresist removal process is performed. It is the position of the support member 120 to wait outside.

The exhaust member 140 discharges gas (particularly, supercritical fluid) in the chamber 110 from the chamber 110 to the outside during the process. The exhaust member 140 has a discharge line 142 and a flow control valve 144. The discharge line 142 is connected to the discharge passage 114b ', and discharges the supercritical fluid supplied into the chamber 110 during the process. The flow control valve 144 regulates the supercritical fluid discharge of the discharge line 142. In particular, the flow control valve 144 controls the discharge of the supercritical fluid in the chamber 110 so that the supercritical fluid supplied into the chamber 110 moves at a constant speed in the chamber 110 during the photoresist removal process.

The supercritical fluid generating device 200 generates a supercritical fluid for removing the photoresist on the wafer surface and supplies it to the process chamber 100. The supercritical fluid generating device 200 includes a treating gas supply member 210, a treating liquid supply source 220, and a mixing member 230. do.

The processing gas supply member 210 supplies the processing gas to the mixing member 230. The process gas supply member 210 has a treating gas supply source 212, a treating gas supply line 214, and a first presurrization member 216. .

Process gas source 212 stores process gas. The process gas supply source 212 stores the process gas therein, and the stored process gas is supplied to the mixing member 230 through the process gas supply line 214 during the process. Here, the processing gas is an inert gas for pressurizing the processing liquid. Carbon dioxide (CO2) may be used as the treatment gas.

The process gas supply line 214 supplies the process gas from the process gas supply source 212 to the mixing member 230. One end of the process gas supply line 214 is connected to the process gas supply source 212, and the other end of the process gas supply line 214 is connected to the mixing member 230.

The first pressurizing member 216 pressurizes the processing gas flowing through the processing gas supply line 214. A pump is used as the first pressing member 216. The first pressing member 216 pressurizes the processing gas to a high pressure to propel the processing liquid supplied to the mixing member 230. Therefore, the processing liquid supplied to the mixing member 230 during the process is pushed by the processing gas to reach a pressure for satisfying the supercritical fluid state. For example, the first pressing member 216 pressurizes the processing gas so that the pressure of the processing liquid supplied to the mixing member 230 reaches approximately 75 bar to 300 bar.

The treatment liquid supply member 220 supplies the treatment liquid to the mixing member 230. Here, the processing liquid is a liquid for removing photoresist on the wafer W surface. At least one of hydrofluoric acid (HF) or various kinds of organic solvents is used as the treatment liquid.

The treatment liquid supply member 220 has a treatment liquid supply source 222, a treatment liquid supply line 224, and a second pressurization member 226. .

The treatment liquid supply source 222 stores the treatment liquid, and the treatment liquid supply line 224 supplies the treatment liquid from the treatment liquid supply source 222 to the mixing member 230. In addition, the second pressing member 226 applies a flow pressure to the processing liquid flowing along the processing liquid supply line 224. At this time, when the processing liquid supplied to the mixing member 230 is supplied into the mixing member 230, the second pressing member 226 pressurizes the processing liquid to reach a pressure for a supercritical state.

In addition, the second pressurizing member 226 has a flow rate of the processing liquid flowing along the processing liquid supply line 224 such that the processing liquid supplied to the mixing member 230 is supplied to the mixing member 230 at a predetermined flow rate during the process. Adjust That is, since the processing gas and the processing liquid supplied to the mixing member 230 during the process are mixed to form a supercritical fluid having a predetermined concentration, the second pressurizing member 226 is used to control the processing liquid supplied to the mixing member 230. By adjusting the flow rate, the concentration of the supercritical fluid generated by the mixing member 230 satisfies the predetermined concentration.

The mixing member 230 receives the processing gas and the processing liquid from each of the processing gas supplying member 210 and the processing liquid supplying supplying member 220 and mixes them to generate a supercritical fluid. The mixing member 230 includes a generating vessel 232, a heater 234, an agitator 236, and a supercritical-fluid supply line 238. do.

The production container 232 provides a space for receiving the processing gas and the processing liquid therein. The production vessel 232 is connected to the processing gas supply line 214 and the processing liquid supply line 224 on one side 232a, and is connected to the supercritical fluid supply line 238 on the other side 232b.

The stirrer 236 mixes the processing gas and the processing liquid injected into the production vessel 232. The stirrer 236 includes a plurality of blades 236a and a drive motor 236b. In the process, the driving motor 236b rotates the blades 236a at a constant rotation speed, and the processing gas and the processing liquid in the production vessel 232 are mixed at a uniform concentration by the rotating blades 236a.

The heater 234 heats the inside of the production container 232. The heater 234 is installed around the production vessel 232. At this time, the heater 234 heats the production vessel 232 so that the processing liquid in the production vessel 232 is maintained in a supercritical state. For example, the heater 234 heats the production vessel 232 such that the temperature of the fluid in the production vessel 232 satisfies approximately 28 ° C. to 80 ° C. during the process.

The supercritical fluid supply line 238 supplies the supercritical fluid from the production vessel 232 to the chamber 110. One end of the supercritical fluid supply line 238 is connected to the other side 232b of the production vessel 232, and the other end is connected to the supply passage 114a ′ of the chamber 110.

In the present exemplary embodiment, the process gas supply line 214 and the process liquid supply line 224 independently process the process gas and the process liquid to the mixing member 230, but the process gas supply line 214 has been described as an example. ) And the treatment liquid supply line 224 are connected in one line, so that the treatment gas and the treatment liquid may be supplied to the mixing member 230 through one line during the process.

Hereinafter, the process of the substrate processing equipment described above will be described in detail. Figure 2 is a flow chart showing a substrate processing method according to the present invention, Figure 3 is a flow chart showing a supercritical fluid generation process of the supercritical fluid generating apparatus according to the present invention. And, Figure 4 is a view for explaining the process of the substrate processing equipment according to the present invention, Figures 5a and 5b is a view for explaining the process of removing the photosensitive liquid according to the present invention.

When the process starts, the supercritical fluid generating device 100 generates the supercritical fluid, and the substrate processing equipment performs the process of receiving the supercritical fluid from the supercritical fluid generating device 100 to process the wafer.

That is, referring to FIG. 2, the wafer W is loaded on the support member 120 of the process chamber 100 (S110). That is, the wafer W is placed on the support member 120 positioned at the standby position b by a robot arm (not shown). When the wafer W is placed on the support member 120, the driving member 130 moves the support member 120 from the standby position b to the process position a. When the support member 120 is located at the process position (a), the inside of the chamber 110 is sealed to the outside and then heated to a predetermined temperature.

Here, when the support member 120 is located at the process position a, the wafer W is positioned at a height opposite to the supply passage 114a 'of the chamber 110. That is, the supercritical fluid supplied to the chamber 110 during the process is supplied in a direction parallel to the processing surface of the wafer (W) to move from one side of the wafer (W) to the other side to remove the photosensitive liquid. To this end, the height of the wafer (W) during the process is preferably located the same as the height of the supply passage (114a '). In addition, during the process, the discharge passage 114b 'is configured such that the supercritical fluid supplied in a direction parallel to the processing surface of the wafer W through the supply passage 114a' is easily discharged through the discharge passage 114b '. It is preferably provided to face the other side of the wafer (W).

The supercritical fluid generating device 200 generates a supercritical fluid that satisfies a predetermined concentration and temperature (S200). The production of the supercritical fluid and the supply process of the supercritical fluid produced are as follows. Referring to FIG. 3, each of the processing gas supply member 210 and the processing liquid supply member 220 supplies the processing gas and the processing liquid to the mixing member 230 (S210). That is, the valve V1 is opened and the first pressurizing member 216 is operated so that the processing gas supply line 214 supplies the processing gas from the processing gas supply source 212 to the production vessel 232. At this time, the processing gas is pressurized to a high pressure by the first pressing member 216 is supplied to the production vessel 232. In addition, the valve V2 is opened and the second pressurizing member 226 is operated to supply the processing liquid from the processing liquid supply source 222 to the production vessel 232. At this time, the processing liquid is pressurized to a high pressure by the second pressing member 226 is supplied to the production vessel 232.

The production container 232 mixes and heats the supplied processing gas and the processing liquid (S220). That is, the processing liquid supplied to the production container 232 is propelled by the processing gas and injected into the production container 232, and the processing liquid passing through the production container 232 is heated by the heater 234 to be in a supercritical state. Is converted to. In addition, the processing gas and the processing liquid passing through the production vessel 232 is mixed by the stirrer 236 to generate a supercritical fluid that satisfies the predetermined concentration. The supercritical fluid generated while passing through the production container 232 is supplied to the process chamber 100 (S230).

The process chamber 100 receives the supercritical fluid from the supercritical fluid generating device 200 and removes the photosensitive liquid on the surface of the wafer W (S300). That is, referring back to FIG. 2, the valve V3 is opened so that the supercritical fluid supply line 238 supplies the supercritical fluid from the mixing member 230 to the chamber 110. At this time, the supercritical fluid supplied to the chamber 110 is moved from one side wall 114a to the other side wall 114b. The supercritical fluid is supplied toward the side of the wafer W through the supply passage 114a 'provided on one side wall 114a, and then the chamber 110 through the discharge passage 114b' provided on the other side wall 114b. Is discharged from Therefore, the supercritical fluid removes the photosensitive liquid formed on the surface of the wafer W while moving from one side of the wafer W to the other at a constant moving speed. That is, referring to FIGS. 5A to 5C sequentially, the supercritical fluid moving at a constant speed from one side of the wafer W to the other side removes the photosensitive liquid layer L1 on the surface of the wafer W. FIG. At this time, the surface (L2) of the photosensitive liquid layer (L1) is hardened (hardened) after the ion implantation process is not removed well by the general supercritical fluid. Accordingly, by supplying the supercritical fluid supplied to the chamber 110 toward the side surface of the wafer W, the supercritical fluid causes the photoresist layer L1 to be concentrated, thereby allowing the surface L2 to be removed together.

In addition, during the photoresist removal process, the flow rate adjusting member 144 of the exhaust member 140 adjusts the flow rate of the supercritical fluid moving inside the chamber 110 during the process. That is, the flow rate adjusting member 144 adjusts the discharge of the supercritical fluid discharged through the discharge line 142 during the process, and the flow rate of the supercritical fluid moving inside the chamber 110 is a preset moving speed value. Let it flow with satisfaction

When the photosensitive liquid is removed from the surface of the wafer W, the valves V1, V2, and V3 are closed, and the driving member 130 moves the supporting member 120 from the process position a to the standby position b. When the support member 120 is located at the standby position b, the robot arm (not shown) unloads the wafer W from the support member 120 and then transports it to a facility where a subsequent process is performed.

As described above, the supercritical fluid generating apparatus 200 according to the present invention stably generates and supplies the supercritical fluid satisfying a predetermined concentration to the process chamber 100. That is, the supercritical fluid generating apparatus 200 pressurizes the processing gas and supplies the processing gas supply member 210 to supply the mixing member 230 and the processing liquid supply member supplying a predetermined amount of the processing liquid to the mixing member 230. By providing 220, the supercritical fluid that satisfies the predetermined concentration is stably generated.

In addition, the present invention improves the efficiency of removing foreign matter (photosensitive liquid) from the substrate surface. That is, during the photoresist removal process, the chamber 110 is opened to communicate with the outside. Therefore, the supercritical fluid supplied to the process chamber 100 during the process removes the photoresist on the surface of the wafer W while moving from one side of the chamber 110 to a constant flow rate, thereby improving efficiency of removing the photoresist. have.

In the above-described embodiment of the present invention, the process gas and the process liquid supplied to the mixing member 230 are converted into a supercritical state fluid that satisfies a predetermined concentration and temperature while passing through the production container 232 ( In the case of supplying 100), the concentration and temperature control of the supercritical fluid may be satisfied in various ways.

For example, referring to FIGS. 6 and 7, the substrate treating apparatus 10 ′ according to another embodiment of the present invention is a temperature measuring part 240 and a concentration measuring instrument in comparison with the substrate treating apparatus 10. It further includes a measuring part 250, and a controller 260.

The temperature measuring unit 240 measures the temperature of the supercritical fluid in the mixing member 230, and the concentration measuring unit 250 measures the concentration of the supercritical fluid in the mixing member 230. The controller 260 controls the supercritical fluid generating device 200 by receiving data about the temperature value measured by the temperature measuring device 240 and data about the concentration value measured by the concentration measuring device 250.

When the process of the substrate processing equipment 10 ′ is started, as shown in FIG. 6, the processing liquid and the processing gas supplied to the mixing member 230 pass through the production container 232 to satisfy a predetermined concentration. Converted to a state fluid. Here, the valve V3 is closed, and the supercritical fluid generated in the mixing member 230 is discharged through a separate discharge line.

In this case, the temperature measuring unit 240 and the concentration measuring unit 250 respectively measure the temperature and concentration of the supercritical fluid in the production vessel 232. In addition, the controller 260 receives data about the temperature value and the concentration value of the supercritical fluid measured from each of the temperature measuring device 240 and the concentration measuring device 250 to determine this. If the temperature value or concentration value of the generated supercritical fluid is out of the predetermined temperature value or concentration value, the controller 260 presses the second pressure so that the generated supercritical fluid satisfies the predetermined temperature value and concentration value. The member 226 and the heater 234 are controlled. For example, when the temperature value of the generated supercritical fluid exceeds a preset temperature value, the controller 260 controls the heater 234 to reduce the heating temperature of the heater 234. Alternatively, when the temperature value of the generated supercritical fluid is equal to or less than the preset temperature value, the controller 260 controls the heater 234 to increase the heating temperature of the heater 234. In addition, when the concentration value of the generated supercritical fluid exceeds a predetermined concentration value, the controller 260 controls the second pressing member 226 to increase the amount of the processing liquid supplied to the production vessel 232. Alternatively, when the concentration value of the generated supercritical fluid is equal to or less than the predetermined concentration value, the controller 260 controls the second pressing member 226 to reduce the amount of the processing liquid supplied to the production vessel 232.

When the temperature value and concentration value of the supercritical fluid generated thereafter satisfy the preset temperature value and concentration value, as illustrated in FIG. 7, the controller 260 opens the valve V3 to process the process chamber ( 100) to supply the supercritical fluid. The supercritical fluid supplied is discharged from the chamber 110 through the exhaust member 140 after removing the photosensitive liquid on the surface of the wafer (W).

Here, the internal pressure of the production vessel 232 before supplying the supercritical fluid from the production vessel 232 to the process chamber 100 is preferably higher than the internal pressure of the chamber 110. This is to allow the pressure inside the production vessel 232 to be higher than the pressure inside the chamber 110, so that the supercritical fluid in the production vessel 232 can be efficiently supplied to the chamber 110. In addition, after the supercritical fluid is supplied from the production vessel 232 to the process chamber 100, the internal pressure of the production vessel 232 may be maintained to be the same as the internal pressure of the chamber 110. When the supercritical fluid is supplied from the production vessel 232 to the process chamber 100, the supercritical fluid generating device 200 immediately supplies the supercritical fluid to the process chamber 100 during the photoresist removal process of the new wafer. To do this.

Substrate processing equipment 10 ′ according to another embodiment of the present invention described above determines whether the temperature and concentration of the supercritical fluid is maintained at a predetermined temperature and concentration during the process, and then supplies it to the process chamber 100, It is possible to precisely control the temperature and concentration of the critical fluid.

In addition, the substrate processing apparatus 10 ′ according to another embodiment of the present invention may start the production vessel 232 from the production vessel 232 to the process chamber 110 in a state where the pressure inside the production vessel 232 is higher than the internal pressure of the chamber 110. By supplying the critical fluid, the supercritical fluid in the production vessel 232 is effectively supplied to the process chamber 110.

In addition, in the substrate processing apparatus 10 ′ according to another embodiment of the present invention, after the supercritical fluid is supplied to the process chamber 100, the internal pressure of the production vessel 232 is equal to the internal pressure of the chamber 110. The supercritical fluid generating device 200 immediately supplies the supercritical fluid to the process chamber 100 during the photoresist removal process of the new wafer, thereby shortening the process time.

In the above-described embodiments of the present invention, a case in which the supercritical fluid supplied into the chamber 110 is removed at a constant flow rate inside the chamber 110 to remove the photosensitive liquid formed in the wafer W is described as an example. The method of removing the photosensitive liquid formed in (W) may be variously applied. For example, as another embodiment of the present invention, when the process is started, the supercritical fluid is supplied from the supercritical fluid generating device 200 to the process chamber 100. At this time, the exhaust member 140 is not exhaust of the chamber 110, the chamber 110 is sealed to the outside, the pressure is reduced to a predetermined process pressure. The photosensitive liquid formed on the wafer W is removed by the supercritical fluid supplied to the process chamber 100. That is, in the substrate processing method according to another embodiment of the present invention, the photoresist removing process is performed in a state where the chamber 110 is sealed to the outside.

Removal of the photosensitive liquid by the chamber 110 may be performed by depressurizing the internal pressure of the chamber 110 to a predetermined pressure. In addition, the above-described photosensitive liquid removal by the chamber 110 may be alternately or selectively performed with the photosensitive liquid removing method by the chamber 110 opening method.

The foregoing detailed description illustrates the present invention. In addition, the foregoing description merely shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications may be made within the scope of the concept of the invention disclosed in this specification, the scope equivalent to the disclosed contents, and / or the skill or knowledge in the art. The above-described embodiments are for explaining the best state in carrying out the present invention, the use of other inventions such as the present invention in other state known in the art, and the specific fields of application and uses of the present invention. Various changes are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to include other embodiments.

The supercritical fluid generating apparatus and substrate processing equipment and method including the same according to the present invention efficiently remove the photosensitive liquid formed on the wafer surface.

The supercritical fluid generating apparatus and substrate processing equipment and method including the same according to the present invention maintain a constant concentration of the supercritical fluid at a predetermined concentration value and proceed with the process.

The supercritical fluid generating device and substrate processing equipment and method having the same according to the present invention shorten the time for processing the substrate.

Claims (16)

In the substrate processing equipment, A process chamber for processing a substrate, A processing gas supply member for supplying a processing gas; A processing liquid supply member for supplying a processing liquid, A supercritical fluid including a processing gas supply member and a mixing member receiving the processing gas and the processing liquid from each of the processing liquid supply members, and generating a supercritical fluid with the processing gas and the processing liquid to supply the supercritical fluid to the process chamber. A fluid generating device, The mixing member, A generating container which provides a space for generating a supercritical fluid therein; A heater for heating the production container, and And a stirrer for mixing the processing gas and the processing liquid in the production vessel. The method of claim 1, The treatment gas includes carbon dioxide, The processing liquid comprises at least one of hydrofluoric acid or an organic solvent. The method according to claim 1 or 2, The treatment liquid supply member, A processing liquid supply source for storing the processing liquid, A processing liquid supply line for supplying the processing liquid from the processing liquid supply source to the production vessel, and A pressurizing member installed in the treatment liquid supply line to pressurize the treatment liquid moved along the treatment liquid supply line; The pressing member, It is a metering pump which supplies a process liquid of a predetermined amount. In the supercritical fluid generating device, A processing gas supply member for supplying a processing gas; A processing liquid supply member supplying the processing liquid using a pressurizing member pressurizing the processing liquid; A production vessel that receives the processing gas and the processing liquid from each of the processing gas supply member and the processing liquid supply member and provides a space for generating a supercritical fluid therein; a heater for heating the production vessel; and the production vessel. A mixing member including a stirrer for mixing the processing gas and the processing liquid; A temperature measuring device for measuring a temperature of the supercritical fluid in the production container; A concentration meter for measuring the concentration of the supercritical fluid in the production vessel, and And a controller configured to control the pressure member and the heater by receiving temperature data and concentration data measured by the temperature measuring device and the concentration measuring device, respectively. A process chamber for processing a substrate, A supercritical fluid generating device for generating a supercritical fluid and supplying the supercritical fluid generated to the process chamber, The process room, A chamber providing a space therein for processing the substrate; A support member supporting the substrate in the chamber during the process; The chamber, A top wall and a side wall, The side wall is, A side wall on which a supply passage for receiving a supercritical fluid from the supercritical fluid generating device is formed; And a second side wall on which a discharge passage for discharging the supercritical fluid supplied to the outside is formed. The method of claim 5, wherein The supply passage and the discharge passage, Facing each other, The supply passage, And a supercritical fluid supplied to the chamber during the process is supplied in a direction parallel to the substrate placed on the support member. The method according to claim 5 or 6, The substrate processing equipment, Further comprising an exhaust member for discharging the supercritical fluid in the chamber to the outside of the chamber during the process, The exhaust member, A discharge line connected to the discharge passage to discharge the supercritical fluid in the chamber to the outside during the process; And a flow rate adjusting member installed at the discharge line to control the discharge of the supercritical fluid discharged along the discharge line. The method of claim 7, wherein The supercritical fluid generating device, A processing gas supply member for supplying a processing gas; A treatment liquid supply member for supplying a treatment liquid, and And a mixing member receiving the processing gas and the processing liquid from each of the processing gas supply member and the processing liquid supply member. The mixing member, A generating container which provides a space for generating a supercritical fluid therein; A heater for heating the production container, and And a stirrer for mixing the processing gas and the processing liquid in the production vessel. The method of claim 8, The treatment liquid supply member, A processing liquid supply source for storing the processing liquid, A processing liquid supply line for supplying the processing liquid from the processing liquid supply source to the production vessel, and A pressurizing member installed in the treatment liquid supply line to pressurize the treatment liquid moved along the treatment liquid supply line; The pressing member, It is a metering pump which supplies a process liquid of a predetermined amount. The method of claim 9, The supercritical fluid generating device, A temperature measuring device for measuring a temperature of the supercritical fluid in the production container; A concentration meter for measuring the concentration of the supercritical fluid in the production vessel, and And a controller for controlling the pressure member and the heater by receiving temperature data and concentration data measured by the temperature measuring instrument and the concentration measuring instrument, respectively. The controller, When the concentration value measured by the concentration meter exceeds a predetermined concentration value, the pressing member is controlled to reduce the amount of the processing liquid supplied to the production vessel, And when the concentration value measured by the concentration meter is equal to or less than a predetermined concentration value, controlling the pressing member to increase the amount of the processing liquid supplied to the production container. delete delete delete Generating a supercritical fluid and supplying the generated supercritical fluid in a direction parallel to the processing surface of the substrate to remove foreign substances on the substrate surface; Supercritical fluid supplied to the substrate, Removing the foreign matter while moving from one side of the substrate to the other side; Supercritical fluid movement from one side of the wafer to the other side, Opening the chamber in which the process of removing the foreign matter is performed during the process, and the supercritical fluid supplied to the chamber is discharged from the chamber; Generation of the supercritical fluid, The process liquid for removing the foreign matter is made by the process liquid to the predetermined pressure by the process gas for pushing the process liquid, and the propelled process liquid is heated to a predetermined temperature, Promotion of the processing liquid, It is made in the production vessel for receiving the processing gas and the processing liquid to generate the supercritical fluid, Removal of the foreign material is made in the chamber in which the substrate is located inside the process, The treatment liquid, And a supply amount is adjusted before being supplied to the production container so that a predetermined amount is supplied to the production container. The method of claim 14, The pressure of the production vessel, Higher than the pressure of the chamber before the supercritical fluid is supplied to the chamber, And after the supercritical fluid is supplied to the chamber, equal to the pressure of the chamber. The method according to claim 14 or 15, The foreign material removal, It is made in a chamber having a space for receiving a supercritical fluid therein to remove foreign substances on the surface of the substrate, The substrate processing method, A first method of removing the foreign matter while the supercritical fluid is moved from one side of the substrate to the other side in the chamber; And a second method of selectively removing the foreign matter while the supercritical fluid is stagnant in the chamber.

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