KR100753629B1 - Apparatus and method for treating substrates - Google Patents

Abstract

An apparatus for processing a substrate is provided to simplify the structure of a substrate processing apparatus by eliminating the necessity for vertically moving a support member. A substrate is supported by a support member. A process liquid supply member selectively injects a plurality of process liquids to the surface of the substrate. A process liquid recycle part(300) has recycle rooms that selectively suck each process liquid injected by the process liquid supply member and separately recycle the sucked process liquid. The process liquid recycle part includes a suction line and a pressure control member(350). A process liquid used in a process is introduced into the recycle rooms by the suction line. The pressure control member selectively controls the pressure in the recycle rooms. The suction line includes a main line for introducing used process liquid and divergence lines which are diverged from the main line to be connected to each recycle room.

Description

Substrate processing apparatus and method {APPARATUS AND METHOD FOR TREATING SUBSTRATES}

1 is a block diagram of a substrate processing apparatus according to an embodiment of the present invention.

FIG. 2 is an enlarged view of the discharge part shown in FIG. 1.

FIG. 3 is an enlarged view of the region A shown in FIG. 2.

4A to 4C are diagrams for describing a process of a substrate processing apparatus according to an embodiment of the present invention.

5 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.

6 is a configuration diagram of a treatment liquid recovery unit according to another embodiment of the present invention.

FIG. 7 is an enlarged view of the region A ′ shown in FIG. 6.

8A to 8C are diagrams for describing a process of a substrate processing apparatus according to another embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

1: substrate processing apparatus

100 process processing unit

200: treatment fluid supply

300: treatment fluid recovery unit

400: control unit

The present invention relates to an apparatus and method for processing a substrate, and more particularly, to a substrate processing apparatus and method for cleaning a semiconductor substrate.

In general, semiconductor manufacturing processes include deposition, etching, coating of photo-resist, developing, ashing, and cleaning processes. Among these, the cleaning process removes reaction by-products and other contaminants generated in the above-described process.

A general cleaning apparatus has a chuck, a driven member for driving the chuck, a recycling duct, and a treating-liquid supply member. The chuck supports and secures the substrate. The driver rotates or elevates the chuck during the process. The recovery duct has a structure surrounding the side of the chuck and has ducts stacked up and down inside. Each of the ducts recovers the used treatment liquid. The processing liquid supply member sprays the processing liquid onto the surface of the rotating substrate. When the process starts, the substrate processing apparatus having the above configuration is rotated at a predetermined rotational speed after the substrate is seated on the chuck. The processing liquid supply member sprays the processing liquid onto the rotating substrate. The processing liquid injected into the substrate cleans the substrate while spreading from the center region of the substrate to the edge region by centrifugal force. The used treatment liquid is separated from the substrate by centrifugal force and moved to the recovery duct. At this time, the driver adjusts the height of the chuck so that the used treatment liquid is accommodated in the duct to be recovered among the ducts.

However, in the above-described substrate processing apparatus, as the wafer is enlarged and the pattern formed on the substrate is miniaturized, the processing liquid used in the process is not completely removed. If the treatment liquid is not discharged effectively during the process, problems such as contamination of the equipment or backflow of the treatment liquid occur. If the treatment liquid remains, the efficiency of the substrate treatment process is lowered by the fume generated from the treatment liquid.

In addition, since the process proceeds while the substrate is exposed to the air, the cleaning efficiency is lowered by external contaminants. In addition, the general substrate processing apparatus recovers the processing liquid by driving the chuck up and down for each recovery step of the processing liquid during the process. Therefore, the configuration thereof is complicated, and there are many errors in the installation due to the driving of the chuck, and the cleaning process time is increased.

An object of the present invention is to provide a substrate processing apparatus and method for efficiently cleaning a substrate.

It is an object of the present invention to provide a substrate processing apparatus and method capable of separating and recovering processing liquids with a simple apparatus configuration.

An object of the present invention is to provide a substrate processing apparatus and method capable of independently separating and recovering respective processing liquids upon recovery of the processing liquids used in the substrate processing process.

The substrate processing apparatus according to the present invention for achieving the above object is a support member for supporting the substrate during the process, a processing liquid supply member for selectively spraying a plurality of processing liquids on the substrate, and the injection by the processing liquid supply member And a processing liquid recovery unit having recovery chambers for selectively sucking and recovering each of the processing liquids.

According to an embodiment of the present invention, the treatment liquid recovery part further includes an inlet line for introducing the treatment liquid used in the process into the recovery chambers and a pressure regulating member for selectively adjusting the pressure in the recovery chambers.

According to an embodiment of the present invention, the suction line includes a main line for introducing the used processing liquid and a branch line branching from the main line to communicate with each recovery chamber.

According to an embodiment of the present invention, the recovery chambers are fixedly installed, and the substrate processing apparatus further includes a control unit controlling the height of the support member to be fixed while a process is performed by a plurality of processing liquids.

According to an embodiment of the present invention, the treatment liquid recovery member further includes a recovery block provided with the recovery chambers therein and disposed to surround an outer circumferential surface of the support member.

According to one embodiment of the invention, the recovery block is installed spaced apart from the support member such that the main line is provided between the inner surface of the recovery block and the outer peripheral surface of the support member, the branch line is inside the recovery block Is provided.

According to one embodiment of the invention, the outer peripheral surface of the support member is inclined so as to move away from the center of the support member toward the bottom.

According to an embodiment of the present invention, the substrate processing apparatus further includes an upper cover which is positioned above the substrate seated on the support member and guides the processing liquids injected into the substrate to the inflow line during the process.

According to one embodiment of the invention, the interval between the inner surface of the recovery block and the outer peripheral surface of the support member is 1mm to 5mm.

According to one embodiment of the invention, the inclination of the outer peripheral surface and the inner surface is 20 ° to 70 °.

According to an embodiment of the present invention, the pressure regulating member includes vacuum chambers formed in the recovery block to communicate with the respective recovery chambers, and wherein each internal pressure is independently controlled.

According to an embodiment of the present invention, the recovery chambers are provided in an annular shape and stacked up and down with each other, and the vacuum chambers are provided to surround the recovery chambers corresponding to each other.

According to one embodiment of the invention, the upper surface of each of the recovery chamber is provided with a blocking projection protruding downward to prevent the processing liquid from flowing into the vacuum chamber.

A substrate processing apparatus according to another embodiment of the present invention for achieving the above object is a support member for supporting a substrate during the process, a processing liquid supply member for selectively spraying a plurality of processing liquids on the substrate, and the processing liquid supply And a processing liquid recovery part having recovery chambers for selectively sucking and recovering each processing liquid injected by the member.

According to another embodiment of the present invention, the treatment liquid recovery part further includes an inlet line for introducing the treatment liquid used in the process into the recovery chambers and a pressure regulating member for selectively adjusting the pressure in the recovery chambers.

According to another embodiment of the present invention, the inflow line includes a main line for introducing the used processing liquid and a branching line branched from the main line to communicate with each recovery chamber.

According to another embodiment of the present invention, the recovery chambers are fixedly installed, and the substrate processing apparatus further includes a control unit for controlling the height of the support member to be fixed while a process is performed by a plurality of processing liquids.

According to another embodiment of the present invention, the treatment liquid recovery part is formed to surround the outside of the support member, and the housing therein provides a space for recovering the used treatment liquids and the plurality of recovery chambers inside the housing Partition walls that partition into the furnace.

According to another embodiment of the present invention, the partition walls include a vertical wall installed vertically in the housing and an upper wall extending horizontally from the upper end of the vertical wall toward the outer circumferential surface of the support member, wherein the main line Is provided between the end of each of the upper walls and the outer circumferential surface of the support member.

According to another embodiment of the present invention, each of the upper walls has a structure stacked up and down, the branch line is provided in the space between the upper walls.

According to another embodiment of the invention, the outer circumferential surface of the support member is inclined away from the center of the support member toward the bottom.

According to another embodiment of the present invention, the substrate processing apparatus further includes an upper cover which is positioned above the substrate seated on the support member and guides the processing liquids injected into the substrate to the inflow line during the process.

According to another embodiment of the invention, the distance between the end of each of the upper walls and the outer peripheral surface of the support member is 1mm to 5mm.

According to another embodiment of the invention, the inclination of the end of each of the upper walls and the outer circumferential surface of the support member is 20 ° to 70 °.

According to another embodiment of the present invention, the pressure regulating member has a plurality of discharge lines each of which communicates with the recovery chambers, receives the processing liquid from the discharge lines, and the number of processing liquids to be recovered therein. It further includes a recovery tank having an independent space, and a pressure reducing member for reducing the pressure in the recovery tank.

According to another embodiment of the present invention, the treatment liquid recovery part further includes a plurality of recovery lines for recovering the treatment liquids in the recovery tank.

The substrate processing method according to the present invention for achieving the above object provides a plurality of recovery chambers for separating and recovering the processing liquid used in the process to the outside of the support member on which the substrate is placed, and selectively supply the plurality of processing liquids The process chambers are processed, and the recovery chambers decompress each of the treatment liquids by depressurizing the recovery chamber to be recovered from the recovery chambers.

According to an embodiment of the present invention, the substrate processing method maintains a constant height of the support member and the recovery chamber while a plurality of processing liquids are supplied.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosure may be made thorough and complete, and to fully convey the spirit of the invention to those skilled in the art. Accordingly, the shape of the elements in the drawings and the like are exaggerated to emphasize a clearer description. In addition, in the present embodiment, an apparatus for performing a substrate cleaning process using a plurality of chemical liquids will be described as an example. It is possible.

(Example)

1 is a block diagram of a substrate processing apparatus according to the present invention, Figure 2 is an enlarged view of the discharge portion shown in FIG. 3 is an enlarged view of the region A shown in FIG. 2.

Referring to FIG. 1, an apparatus for treating substrates 1 performs a process of treating a semiconductor wafer with a plurality of processing fluids. The substrate processing apparatus 1 includes a process treating member 100, a treating liquid supply member 200, a treating liquid recycle member 300, and a control member. (400).

The process processor 100 performs a process such as chemical cleaning, rinsing, and drying on a substrate. The process processor 100 includes a support member 110, an upper cover assembly 120, and a lower cover assembly 130.

The support member 110 supports the substrate during the treatment process. The support member 110 includes a spin head 112, a spindle 113, a substrate fixing member 114, and a first rotating member 116. Has The spin head 112 has an upper surface 112a on which the substrate W is loaded and an outer circumferential surface 112b that is inclined away from the center of the spin head 112.

The spindle 113 is coupled with the central lower portion of the support member 110. The spindle 113 receives a rotational force from the first rotating member 116. By the rotation of the spindle 113, the spin head 112 is interlocked and rotated.

The substrate fixing member 124 is provided in plural at the edge of the upper surface 112a. Each substrate fixing member 124 is provided in a pin shape and is installed to be perpendicular to the upper surface 112a. The substrate fixing members 124 are disposed at a uniform angle with respect to the center of the upper surface 112a, and each substrate fixing member 124 chucks a part of the edge of the substrate W during the process. do. The substrate W is positioned at a predetermined distance from the upper surface 112a by the substrate fixing member 124.

The first rotating member 116 has a driven member 116a, a driven power delivering member 116b, and a spindle 116c. A motor may be used as the driver 116a. The power transmission unit 116b transmits the rotational force of the driving unit 116a to the spindle 116c. As the power transmission unit 116b, a belt or a chain may be used.

The upper cover assembly 120 protects the substrate from external contaminants and oxygen. In addition, the upper cover assembly 120 prevents the scattering of the processing fluids injected into the substrate (W) loaded on the support member 110 during the process. The upper cover assembly 120 has an upper cover 122, a first nozzle member 124, and a second rotating member 126.

The upper cover 122 has a lower surface opposite to the upper surface W 'of the substrate W. As shown in FIG. For example, the upper cover 122 is made of a circular plate having a diameter capable of sufficiently covering the upper surface (W '). The guide part 122a is formed at the edge of the upper cover 122. The inner circumferential surface of the guide portion 122a is inclined away from the center of the upper cover 122 as it goes down.

The first nozzle unit 124 injects the processing fluid to the upper surface of the substrate (W) during the process. The first nozzle unit 124 has a fluid passage 124a and a plurality of injection holes 124b. The fluid passage 124a receives the processing fluid from the processing fluid supply unit 200. The fluid passage 124a is formed inside the top cover 122. The fluid passage 124a is formed from the center to the edge of the top cover 122. At least one fluid passage 124a is provided and distributes the processing fluid supplied from the processing fluid supply unit 200 to the injection holes 124b.

The injection holes 124b are provided in the lower surface of the upper cover 122. The injection holes 124b are formed to spray the processing fluid onto the upper surface W1 of the substrate W during the process. For example, the injection holes 124b are formed in plural along the length direction of the fluid passage 124a. At this time, the injection holes 124b are preferably formed with a higher opening density from the center of the lower surface toward the edge. However, the opening density of the injection holes 124b may be variously modified.

The second rotating member 126 rotates the upper cover 122. The second rotating member 126 has a drive unit 124a, a power transmission unit 124b, and a spindle 124c. The second rotating member 126 has the same configuration as the first rotating member 116 described above. That is, a motor is used as the driving unit 126a, and the power transmission unit 116b transmits the rotational force of the driving unit 126a to the spindle 126c. Therefore, the lower cover 132 is rotated by the rotation of the driving unit 126a.

The lower cover assembly 130 injects a processing fluid to the lower surface W2 of the substrate W. The lower cover assembly 130 has a lower cover 132, a second nozzle member 134, and a third rotating member 136.

The lower cover 132 has an upper surface opposite to the lower surface W2 of the substrate W. For example, the lower cover 132 is made of a circular plate having a diameter that can sufficiently cover the lower surface (W2). The lower cover 132 is disposed between the spin head 122 of the support member 120 and the substrate W seated on the substrate fixing member 124.

The second nozzle unit 134 sprays the processing fluid onto the lower surface W2 of the substrate W during the process. The first nozzle unit 134 has a fluid passage 134a and a plurality of injection holes 134b. The fluid passage 134a receives the processing fluid from the processing fluid supply unit 200. The fluid passage 134a is formed inside the lower cover 132. At least one fluid passage 134a is provided, and distributes the processing fluid supplied from the processing fluid supply unit 200 to the injection holes 134b.

The injection holes 134b are provided on the upper surface of the lower cover 132. The injection holes 134b are formed to uniformly spray the processing fluid onto the lower surface W2 of the substrate W during the process. The injection holes 134b are formed in the same manner as the injection holes 124b of the upper cover 122 as described above, and the opening density is increased from the center of the upper surface of the lower cover 132 to the edge thereof.

The third rotating member 136 rotates the lower cover 132. The third rotating member 136 has a drive unit 136a, a power transmission unit 136b, and a spindle 136c. Here, the method of rotating the lower cover 132 by the third rotating member 136 may include the method of rotating the upper and lower covers 122 and 132 by the first and second rotating members 116 and 126, respectively. same. Accordingly, the configurations for the third rotating member 136 to rotate the lower cover 132 are the same as those of the second rotating member 126. However, the second and third rotating members 126 and 136 may be rotated at different rotational speeds in the process. In addition, the rotation directions of the second and third rotating members 126 and 136 may be different from each other.

The fluid supply unit 200 supplies a processing fluid to the upper cover 122 and the lower cover 132. The fluid supply unit 200 has a treating-liquid supply member 210 and a treating-gas supply member 220. The treatment liquid supply member 210 has a cleaning liquid supply member 211 and a rinse-liquid supply member 216.

The cleaning liquid supply member 211 supplies the cleaning liquid to the upper and lower covers 122 and 132. The cleaning liquid supply member 211 has a first cleaning liquid supply member 212 and a second cleaning liquid supply member 214.

The first cleaning liquid supply member 212 has a first cleaning-liquid supply sorce 212a and a first cleaning-liquid supply line 212b. The first cleaning liquid source 212a stores the first cleaning liquid. The first cleaning liquid supply line 212b supplies the cleaning liquid from the cleaning liquid supply source 212a to the upper and lower covers 122 and 132. The second cleaning liquid supply member 214 has a second cleaning liquid supply source 214a and a second cleaning liquid supply line 214b. The second cleaning liquid supply source 214a stores the second cleaning liquid and the second cleaning liquid supply line 214b supplies the cleaning liquid from the second cleaning liquid supply source 214a to the upper and lower covers 122 and 132.

Here, the first and second cleaning liquids supplied by the cleaning liquid supply member 211 are a mixed solution of at least one chemical and two or more chemicals for removing residual substances remaining on the surface of the substrate W. Can be. For example, a hydrofluoric acid (HF) solution, a SC-1 cleaning liquid, a SC-2 cleaning liquid, or the like having a specific concentration may be used as the cleaning liquid. Residues to be removed by the cleaning liquid may be organics, metal contaminants, and other particles.

In addition, in this embodiment, the cleaning solution supply member 211 has been described as a method of spraying two cleaning solutions as an example, the number of the cleaning solution supplied by the cleaning solution supply member 211 can be changed in various ways depending on the process conditions .

The rinse liquid supply member 216 supplies the rinse liquid to the upper and lower covers 122 and 132. The rinse liquid supply member 216 has a rinse-liquid supply sorce 216a and a rinse-liquid supply line 216b. The rinse liquid source 216a stores the rinse liquid. The rinse liquid may be deionized water (DIW) for removing residual substances such as the cleaning liquid and particles remaining on the surface of the substrate (W). The rinse liquid supply line 216b transfers the rinse liquid from the rinse liquid supply source 216a to the upper and lower covers 122 and 132.

The process gas supply member 220 has a treating gas supply sorce 222 and a treating gas supply line 224. The dry gas supply line 224 transfers the dry gas from the dry gas supply source 222 to the upper and lower covers 122 and 132. The dry gas is used to remove and dry the treatment liquid remaining on the substrate W after the cleaning and rinsing process of the substrate W is performed. Here, the dry gas is an inert gas. Nitrogen gas or compressed air (CDA) may be used as the dry gas. The heater 224a may be installed in the dry gas supply line 224. The heater 224a heats the process gas transferred through the dry gas supply line 224 to a predetermined process temperature.

The treatment liquid recovery unit 300 separates and recovers treatment liquids used in the process. 2, the treatment liquid recovery part 300 according to an embodiment of the present invention may include a housing 310, a division wall 320, a recovery room 330, A suction line 340, a pressure control member 350, and a recycle line 360.

The housing 310 has a shape that surrounds the support member 110 at the side. The housing 310 has a cylindrical shape in which an upper central region is opened. The opened upper portion of the housing 310 is made to enter and exit the substrate W during the process. Top wall 314 of housing 310 extends inward from the top of sidewall 312. Top wall 314 is formed to prevent the processing fluid used in the substrate processing process from scattering outside the device.

A drain line 318 is connected to the bottom wall 316 of the housing 310. The drain line 318 drains the processing fluids which are not recovered to the processing chamber 330 in the housing 310. That is, the drain line 318 drains the processing fluids introduced into the spaces a and b of the internal space of the housing 310 except for the processing chamber 330.

The interior space of the housing 310 is partitioned into a plurality of spaces by the partition walls 320. The space in the housing 310 is partitioned into a plurality of process chambers by the partition wall 320. The number of treatment chambers is provided equal to or greater than the number of treatment liquids to be recovered. In one embodiment, the partition wall 320 has first to fourth partition walls 322, 324, 326, and 328 that are annularly installed with respect to the center of the support member 110. The first partition wall 322 has a side wall 322a and an upper wall 322b. The side wall 322a is vertically installed upward from the lower wall 316 of the housing 310. The upper wall 322b extends from the top of the side wall 322a toward the outer circumferential surface 112 of the support member 110. In the same way, the second and third partition walls 324, 326 have side walls 324a, 326a and top walls 324b, 326b, respectively.

The first partition wall 322 is provided to surround the side wall 324a and the top wall 324b of the second partition wall 324. In the same manner, the second partition wall 324 is installed to surround the third partition wall 326, and the third partition wall 326 is installed to surround the fourth partition wall 328. In this case, the upper ends of the first to third partition walls 322, 324, 326, and the fourth partition wall 328 are installed to face each other at a predetermined interval from each other.

The recovery chambers 330 contain the processing liquids used in the substrate processing process. In one embodiment, the recovery chamber 330 has first to third recovery chambers 332, 334, 336. The first recovery chamber 332 is provided between the first partition wall 322 and the second partition wall 324. The second recovery chamber 334 is provided between the second partition wall 324 and the third partition wall 326. The third recovery chamber 336 is provided between the third partition wall 326 and the fourth partition wall 328. The first to third recovery chambers 332, 334, and 336 accommodate different kinds of treatment liquids used in the process.

The treatment liquid used in the substrate treating process is introduced into the recovery chamber 330 through the suction line 340. Referring to FIG. 3, the suction line 340 has a main line 342 and divergence lines 344. The main line 342 is provided between the end X of the top walls 322b, 324b and 326b of the respective partition walls 322, 324, and 326 and the outer circumferential surface 112a of the spin head 112.

Here, the main line 342 is formed so that the suction pressure of the pressure regulating member 350 can be effectively provided. To this end, the distance (D) between the end (X) and the outer peripheral surface (112a) is preferably 1mm to 5mm. When the distance D is formed within 1 mm, there is less space in which the used processing liquid flows, and the processing liquid does not easily flow into the inflow line 340. In addition, when the distance D exceeds 5 mm, the pressure to suck the processing liquid is lowered, so that the processing liquid cannot be sucked effectively. In addition, the angle of the main line 342 (that is, the angle of the end X and the outer circumferential surface 122b) θ is preferably 20 ° to 70 °. When the angle θ is within 20 °, the supporting member 110 ), The size of the apparatus increases, and the apparatus becomes larger.In addition, when the angle θ exceeds 70 °, the used processing liquid is difficult to flow into the main line 342 effectively.

The branch line 344 branches from the main line 342 and is connected to the first to third recovery chambers 332, 334, and 336 to be recovered, respectively. Branch line 344 has first to third branch lines 344a, 344b, and 344c. The first branch line 344a is branched from the main line 342 and connected to the first recovery space 332. In the same manner, the second and third branch lines 344b and 344c branch off from the main line 342 and are connected to the second and third recovery spaces 334 and 336, respectively.

Referring back to FIG. 2, the pressure regulating member 350 adjusts the pressure in the recovery chamber 330 described above. In particular, the pressure regulating member 350 selectively adjusts the pressure in the first to third recovery chambers 332, 334, and 336, respectively. The pressure regulating member 350 has a recycling tank 352, a discharge line 354, and a pressure reducing member 356.

The recovery tank 352 recovers the processing liquid in the recovery chamber 330. The recovery tank 352 includes a first space 352a that receives the treatment liquid from the first recovery space 332, a second space 352b that receives the treatment liquid from the second recovery space 334, and a third recovery. The third space 352c receives the processing liquid from the space 336. The treatment liquids separated and recovered into the respective spaces 352a, 352b, and 352c are recovered to the treatment liquid regeneration unit (not shown) through the recovery line 360.

The discharge line 354 discharges the treatment liquids in the recovery chamber 330 to the recovery tank 352. Discharge line 354 has first to third lines 354a, 354b, 354c. The first line 354a discharges the processing liquid in the first recovery space 332 to the first space 352a. In the same manner, the second and third lines 354b and 354c discharge the processing liquid in the second and third recovery spaces 334 and 336 to the second and third spaces 352b and 352c, respectively.

The decompression member 356 decompresses the recovery tank 352. The pressure reduction member 356 has a pressure reduction line 356a and a suction member 356b. The decompression line 356a is connected to the inside of the recovery tank 352. A suction member 356b is installed in the decompression line 356a to provide flow pressure to the passage through which the fluid in the decompression line 356a is moved. As the suction member 356b, a vacuum pump may be used.

Each discharge line 354a, 354b, 354c is provided with a valve 354a ', 354b', 354c '. Each of the valves 354a ', 354b', and 354c 'opens the respective discharge lines 354a, 354b, and 354c so that the processing liquid used in the substrate processing is sucked into the processing chamber to be recovered among the first to third processing chambers. Let's do it. The valves 354a ', 354b', and 354c 'open and close the processing liquid to be treated in the processing liquids in the spaces 322, 324 and 326 of the processing chamber by opening the discharge line 354, thereby selectively selecting the processing liquid to be recovered. To recover. That is, the substrate processing apparatus 10 opens only the valve of the discharge line connected to the recovery chamber in which the processing liquid used in the process is recovered.

When the decompression member 356 decompresses the recovery tank 352 during the treatment process, the internal pressure of the recovery space selectively communicating with the recovery tank 352 among the first to third recovery spaces 332, 334, and 336 is reduced in pressure. do. Therefore, the treatment liquid used in the process flows into any one of the branch lines 344a, 344b, and 344c of the inflow line 340 through the reduced pressure of the recovery tank 352.

The treatment liquid in the recovery tank 352 is recovered to the treatment liquid regeneration unit (not shown) through the recovery line 360. The recovery line 360 has first to third recovery lines 362, 364, 366. The first recovery line 362 recovers the processing liquid in the first space 352a of the recovery tank 352 to the processing liquid regeneration unit. In the same manner, the second and third recovery lines 364 and 366 recover the processing liquid in the second and third spaces 352b and 352c to the processing liquid regeneration unit, respectively. Here, the processing liquid regeneration unit is a facility for using each processing liquid separated and recovered again in the substrate processing process. The treatment liquid regenerator performs filtering and temperature control on the recovered treatment liquids and then supplies them to the treatment fluid supply unit 200.

The controller 400 controls the substrate processing apparatus 1 described above. In particular, the controller 400 controls the pressure regulating member 350 to selectively separate and recover the processing liquids used in the substrate processing process. A method of separating and recovering the processing liquids by the controller 400 will be described later.

Hereinafter, the process of the substrate processing apparatus 1 having the above-described configuration will be described in detail.

4A to 4C are diagrams for describing a process of a substrate processing apparatus according to an embodiment of the present invention, and FIG. 5 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.

Referring to FIG. 5, when the substrate treating process is started, the substrate W is loaded on the support member 110 (S120). In addition, the upper cover 122 is positioned above the substrate W (S130). The controller 400 rotates the spin head 112, the upper cover 122, and the lower cover 132 in a predetermined rotation speed and rotation direction (S130).

In addition, the first and second nozzle parts 124 and 134 formed on the upper and lower covers 122 and 132 may be rotated by being selectively or sequentially supplied with the processing fluid from the processing fluid supplying part 200. This is sprayed on to perform a cleaning process, and the used treatment liquid is separated and recovered (S140). The supply and recovery of the treatment fluid proceeds as follows.

When the substrate W is loaded on the support member 110, the first cleaning liquid is sprayed onto the substrate W, and the used first cleaning liquid is recovered to the first recovery chamber 332 (S142). Referring to FIG. 4A, the controller 400 opens the valves 212b 'and 354a' and closes the valves 214b ', 216b', 224b, 354b 'and 354c'. Then, the control unit 400 operates the suction member 356b to reduce the pressure inside the recovery tank 352. Accordingly, the upper and lower covers 122 and 132 receive the first cleaning liquid from the cleaning liquid supply member 211 and spray the first cleaning liquid onto the substrate W that is rotated. The sprayed first cleaning liquid cleans the material remaining on the substrate W (eg, contaminants, metal contaminants, or photosensitive liquids). The first cleaning liquid flows from the center region of the substrate W to the edge region, and exits between the support member 110 and the upper cover 122, and between the support member 110 and the lower cover 132. 340 is moved.

The first cleaning liquid sucked into the suction line 340 is recovered to the first recovery chamber 332 through the first branch line 344a provided with a vacuum. The first cleaning liquid recovered into the first recovery chamber 332 is again moved along the first line 354a to the first space 352a in the recovery tank 352. The first cleaning liquid contained in the first space 352a is recovered to the treatment liquid regeneration unit (not shown) through the first recovery line 362 of the recovery line 360. At this time, the gas for sucking the first cleaning liquid is discharged to the outside through the decompression line 352a.

When the first cleaning of the substrate W is completed, a second cleaning liquid is sprayed onto the substrate W to recover the used second cleaning liquid. Referring to FIG. 4B, the controller 400 opens the valves 214b 'and 354b' and closes the valves 212b ', 216b', 224b, 354a 'and 354c'. At this time, the pressure in the recovery tank 352 is maintained at a reduced pressure. Therefore, the upper and lower covers 122 and 132 receive the second cleaning liquid from the cleaning liquid supply member 211 of the processing fluid supply unit 200 and spray the second cleaning liquid onto the substrate W to be rotated. The injected second cleaning liquid secondaryly cleans the material remaining on the substrate (W). The injected second cleaning liquid is moved to the inflow line 340.

The second cleaning liquid sucked into the suction line 340 is sucked into the second branch line 344b provided with the vacuum and then recovered into the space in the second recovery chamber 334. The second cleaning liquid recovered into the second recovery chamber 334 is again moved along the second line 354b to the second space 352b in the recovery tank 352. The second cleaning liquid contained in the second space 352b is recovered to the processing liquid regeneration unit (not shown) through the second recovery line 364. At this time, the gas sucking the second cleaning liquid is discharged to the outside through the decompression line 352a.

When the cleaning of the substrate W is completed, the rinse liquid is injected onto the substrate W, and the used rinse liquid is recovered (S144). Referring to FIG. 4C, the controller 400 opens the valves 216b 'and 354c' and closes the valves 212b ', 214b', 224b, 354a 'and 354b'. Therefore, the rinse liquid supply member 216 sprays the rinse liquid onto the substrate W. As shown in FIG. The sprayed rinse liquid removes the material remaining on the substrate (W). The residual material removed by the rinse liquid may be contaminants such as the first and second cleaning liquids and particles. Used rinse liquid flows into the main line 342.

The rinse liquid introduced into the main line 342 is sucked into the third branch line 344c by the pressure in the recovery tank 352 and then recovered into the space in the third recovery chamber 336. The rinse liquid recovered in the third recovery chamber 336 is again moved along the third line 354c to the third space 352c in the recovery tank 352. The rinse liquid contained in the third space 352c is recovered to the treatment liquid regeneration unit (not shown) through the third recovery line 366. At this time, the gas for sucking the rinse liquid is discharged to the outside through the decompression line 352a.

When the rinsing of the substrate W is completed, the substrate W is dried (S146). That is, the controller 400 opens the valve 224b and closes the valves 212b ', 214b', 216b ', 354a', 354b ', and 354c'. Therefore, the dry gas supply member 220 supplies the dry gas to the upper and lower covers 122 and 132 to inject the dry gas to the substrate (W). At this time, the injected dry gas is heated to a high temperature by the heater 224a. The high temperature dry gas performs a drying process of removing the washing liquid and the rinse liquid remaining on the substrate (W). The processing fluid scattered during the drying process is received in the spaces a and b in the housing 310 and then discharged through the drain lines 318a and 318b.

When the step S140 is completed, the control unit 400 stops the rotation of the support member 110, the upper and lower covers 122 and 132 (S150). The controller 400 moves the upper cover 122 from the upper region of the substrate W to the standby position (S160). When the upper cover 122 is moved to the standby position, the substrate W is unloaded from the support member 110 (S180).

The above-described substrate processing apparatus and method forcibly separate and recover each of the processing liquids used in the substrate processing by vacuum suction. Therefore, the processing liquid used inside the substrate processing apparatus is prevented from remaining. In addition, the separation of the treatment liquid is performed without the vertical movement of the chuck, thereby simplifying the structure of the apparatus.

Example 2

Hereinafter, the processing liquid recovery part 500 of the substrate processing apparatus 1 ′ according to another embodiment of the present invention will be described. Here, the same reference numerals for the same components as those in Embodiment 1 are denoted in the same manner, and detailed descriptions of the components are omitted.

6 is a configuration diagram of a treatment liquid recovery unit according to another exemplary embodiment of the present invention, and FIG. 7 is an enlarged view of the region A 'illustrated in FIG. 6.

6 and 7, the treatment fluid recovery unit 500 according to another embodiment of the present invention may include a housing 510, a recycling block 520, a recycling line 530, A suction line 540, and a pressure control member 550.

The housing 510 has a shape surrounding the support member 110. The housing 510 has a cylindrical shape in which an upper central region is opened. The open upper portion of the housing 510 is made to enter and exit the substrate W during the process. Top wall 514 of housing 510 extends inward from the top of sidewall 512. Top wall 514 is formed to prevent the processing fluid used in the substrate processing process from scattering outside the device.

The lower wall 516 of the housing 510 is connected to a drain line 518 for draining treatment fluids flowing into the housing 510. Treatment fluids which are not recovered by the recovery block 520 during the substrate processing process flow into the space in the housing 510. Accordingly, the drain line 518 discharges the treatment fluids in the housing 510 to the outside of the apparatus.

The recovery block 520 separates and receives respective processing liquids used in the substrate processing process. A recovery room 522 and a recycle room 524 are provided inside the recovery block 520. The recovery block 520 has a ring shape that surrounds the support member 110 at the side. In addition, the recovery block 520 is fixedly installed in the space in the housing 510.

The recovery block 520 has an inner side surface X 'facing the outer circumferential surface 112b of the spin head 112 at a predetermined interval. The structure of the inner side surface X 'is formed in the same manner as the structure of the end (reference numeral X in FIG. 1) of each partition wall described in the embodiment of the present invention. In this embodiment, detailed description of the structure of the inner surface 526 of the recovery block 520 and the outer circumferential surface 112b of the spin head 112 will be omitted.

According to one example, three recovery chambers 522 are provided. Each recovery chamber has first to third recycle spaces 522a, 522b, 522c. The first to third recovery chambers 522a, 522b, 522c are provided in an annular shape along the recovery block 520. Each of the recovery chambers 522a, 522b, and 522c is stacked up and down. Each of the first to third recovery chambers 522a, 522b, and 522c is connected to the recovery line 530.

A blocking jaw 528 is formed in an interior space of each of the first to third recovery chambers 522a, 522b, and 522c. The blocking jaw 528 prevents the used process liquids from being moved from the recovery chamber 522 to the vacuum chamber 524. This is to prevent the processing liquid from flowing into the pressure adjusting member 540 connected to the vacuum chamber 524. The blocking jaw 528 has a plate shape extending from the ceiling of the recovery chamber 522 to the lower region of the recovery chamber 522. The blocking jaw 528 is provided in an annular shape along the recovery chamber 522. At least one blocking jaw 528 is provided in one recovery chamber 522, and its shape may be variously applied.

The recovery line 530 has first to third recovery lines 532, 534, and 536. The first to third recovery lines 532, 534, and 536 are connected to the first to third recovery chambers 522a, 522b, and 522c, respectively. The first to third recovery chambers 532, 534, and 536 recover the processing liquids in the first to third recovery chambers 522a, 522b, and 522c to the treatment liquid regeneration unit (not shown). At this time, the recovery of the treatment liquid is preferably a natural recovery method by gravity. However, alternatively, a forced recovery method by a suction member such as a pump may be used.

The vacuum chamber 524 provides pressure in the recovery chamber 524 described above. In one example, three vacuum chambers 524 are provided. Each vacuum chamber has first to third vacuum chambers 524a, 524b, and 524c. The first to third vacuum chambers 524a, 524b, and 524c communicate with the first to third recovery chambers 522a, 522b, and 522c, respectively. In addition, the first to third vacuum chambers 524a, 524b, and 524c respectively have a shape that surrounds the first to third recovery chambers 522a, 522b, and 522c at the sides.

The suction line 540 introduces the processing liquid used in the substrate processing process into the recovery block 520. The suction line 540 has a main line 542 and a branch line 544 having the same structure as the suction line 340 described in the first embodiment. That is, the main line 542 is formed between the inner side surface X ′ of the recovery block 520 and the outer circumferential surface 112b of the spin head 112, and the branch line 544 is formed in the recovery block 520. . Branch line 544 has first to third branch lines 544a, 544b, and 544c branching from main line 542. A more detailed description of the suction line 530 is omitted.

The pressure regulating member 550 adjusts the pressure in the vacuum chamber 524. In particular, the pressure adjusting member 550 selectively adjusts the pressure in the first to third vacuum chambers 524a, 524b, and 524c. The pressure regulating member 550 has first to third vacuum lines 552, 554, 556. The first line 552 communicates with the first vacuum chamber 524a. In the same manner, the first and second vacuum lines 554 and 556 are connected to the second and third vacuum chambers 524b and 524c, respectively.

Each vacuum line 552, 554, 556 is optionally provided with suction pressure. Each vacuum line 552, 554, 556 is provided with auto valves 542a, 544a, 546a. The valves 542a, 544a and 546a open and close the vacuum line communicating with the processing chamber 522 to recover the processing liquid used in the substrate processing process, thereby selectively recovering the processing liquid to be recovered.

Subsequently, the processing liquid separation recovery process of the substrate processing apparatus 1 ′ described above will be described. Here, the description of the process overlapping with the process liquid separation recovery process described in Example 1 will be omitted.

8A to 8C are diagrams for describing a process of a substrate processing apparatus according to another embodiment of the present invention.

Referring to FIG. 8A, when the substrate treating process is started and the substrate W is loaded on the support member 110, a first cleaning liquid is sprayed onto the substrate W, and the first cleaning liquid used is a first recovery chamber ( 522a). The controller 400 opens the valves 212b ', 532a, and 552a and closes the valves 214b', 216b ', 224b, 334a, 336a, 554a, and 556a. Accordingly, the upper and lower covers 122 and 132 receive the first cleaning liquid from the cleaning liquid supply member 211 and spray the first cleaning liquid onto the substrate W that is rotated. The sprayed first cleaning liquid is moved to the suction line 540 after cleaning the material remaining on the substrate W (eg, contaminants, metal contaminants, or photosensitive liquids).

The first cleaning liquid sucked into the suction line 540 is recovered to the first recovery chamber 522a through the first branch line 544a provided with a vacuum. At this time, the first cleaning liquid recovered to the first recovery chamber 522a is blocked from moving to the first vacuum chamber 524a by the blocking wall 528. Therefore, the first cleaning liquid is received in the first recovery chamber 552a and then recovered to the treatment liquid regeneration unit (not shown) through the first recovery line 532a. At this time, the gas sucking the first cleaning liquid is moved to the first vacuum chamber 524a and then discharged to the outside through the first vacuum line 552.

When the first cleaning of the substrate W is completed, a second cleaning liquid is sprayed onto the substrate W to recover the used second cleaning liquid. Referring to FIG. 8B, the controller 400 opens the valves 214b 'and 534a and 554b and closes the valves 212b' and 216b ', 224b, 532a, 536a, 552a and 556a. Therefore, the upper and lower covers 122 and 132 receive the second cleaning liquid from the cleaning liquid supply member 211 of the processing fluid supply unit 200 and spray the second cleaning liquid onto the substrate W to be rotated. The injected second cleaning liquid is secondly cleaned of the material remaining on the substrate W and then moved to the suction line 540. The second cleaning liquid sucked into the suction line 540 is recovered to the second recovery chamber 522b through the second branch line 544b provided with a vacuum.

At this time, the second cleaning liquid is received in the second recovery chamber 552b and then recovered to the treatment liquid regeneration unit (not shown) through the second recovery line 534a. At this time, the gas sucking the second cleaning liquid is moved to the second vacuum chamber 524b and then discharged to the outside through the second vacuum line 554.

When the cleaning of the substrate W is completed, the rinse liquid is injected onto the substrate W, and the used rinse liquid is collected. Referring to FIG. 8C, the controller 400 opens the valves 216b 'and 536a and 556a and closes the valves 212b' and 214b ', 224b, 532a, 534a, 552a and 554a. Therefore, the rinse liquid supply member 216 sprays the rinse liquid onto the substrate W. As shown in FIG. The sprayed rinse liquid removes the material remaining on the substrate (W). The residual material removed by the rinse liquid may be contaminants such as the first and second cleaning liquids and particles. The used rinse liquid flows into the main line 542.

The rinse liquid introduced into the main line 542 is moved to the third recovery chamber 522c through the third branch line 544c. The rinse liquid accommodated in the third recovery chamber 522c is blocked from being moved to the third vacuum chamber 524c by the blocking wall 528. Therefore, the rinse liquid is accommodated in the third recovery chamber 552c and then recovered to the processing liquid regeneration unit (not shown) through the third recovery line 536a. At this time, the gas sucking the third cleaning liquid is moved to the third vacuum chamber 524c and then discharged to the outside through the third vacuum line 556.

When the rinse of the substrate W is completed, the substrate W is dried. That is, the controller 400 opens the valve 224b and closes the valves 212b ', 214b', 216b ', 532a, 534a, 536a, 552a, 554a, and 556a. Therefore, the dry gas supply member 220 supplies the dry gas to the upper and lower covers 122 and 132 to inject the dry gas to the substrate (W). At this time, the injected dry gas is heated to a high temperature by the heater 224a. The high temperature dry gas performs a drying process of removing the cleaning liquid and the rinse liquid remaining on the substrate W. The processing fluid scattered during the drying process is received in the spaces a and b in the housing 510 and then discharged through the drain line 518.

In the processing liquid recovery part 500 of the substrate processing apparatus having the above-described configuration, a recovery chamber 522 and a vacuum chamber 524 are provided inside the housing 510. Unlike the substrate processing apparatus 1 according to the exemplary embodiment of the present invention, the lines connecting the process chamber 522 and the vacuum chamber 524 are not provided. Therefore, the substrate processing apparatus 1 ′ according to another embodiment of the present invention has a simpler structure than the substrate processing apparatus 1 according to the embodiment and can reduce the size of equipment.

The foregoing detailed description illustrates the present invention. In addition, the foregoing description merely shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications may be made within the scope of the concept of the invention disclosed in this specification, the scope equivalent to the disclosed contents, and / or the skill or knowledge in the art. The above-described embodiments are for explaining the best state in carrying out the present invention, the use of other inventions such as the present invention in other state known in the art, and the specific fields of application and uses of the present invention. Various changes are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to include other embodiments.

In addition, the present invention is applicable to all equipment for treating a substrate with a processing fluid in a liquid (or gaseous state). Among such embodiments, as a preferred embodiment, a rotary cleaning apparatus used in a semiconductor cleaning process has been described as an example, and the present invention can also be used in a rotary etching apparatus.

As described above, the substrate processing apparatus according to the present invention efficiently performs cleaning and drying of the substrate.

In addition, the substrate processing apparatus according to the present invention effectively recovers the treatment liquid used for cleaning and drying the substrate.

In addition, the substrate processing apparatus according to the present invention prevents the processing liquids used for cleaning and drying the substrate from remaining in the process region.

In addition, the substrate processing apparatus according to the present invention is simple in structure because there is no vertical movement of the support member.

In addition, the substrate processing apparatus according to the present invention is capable of rapid recovery of processing liquids.

Claims (24)

delete In the substrate processing apparatus, A support member for supporting the substrate during the process; A processing liquid supply member for selectively spraying a plurality of processing liquids on a substrate; And a treatment liquid recovery part having recovery chambers for selectively sucking and recovering each treatment liquid injected by the treatment liquid supply member, The treatment liquid recovery unit, A suction line for introducing the processing liquid used in the process into the recovery chamber, And a pressure regulating member for selectively adjusting the pressure in the recovery chambers. The method of claim 2, The inlet line, The main line into which used treatment liquid is introduced, And branching lines branching from said main line to communicate with each recovery chamber. The method of claim 3, wherein The recovery chambers are fixedly installed The substrate processing apparatus, And a controller for controlling the height of the support member to be fixed while the process is in progress by a plurality of treatment liquids. The method according to claim 3 or 4, The treatment liquid recovery member, And a recovery block in which the recovery chambers are provided and arranged to surround an outer circumferential surface of the support member. The method of claim 5, The recovery block, The main line is spaced apart from the support member so as to be provided between the inner surface of the recovery block and the outer circumferential surface of the support member, The branch line is, And a substrate processing apparatus provided in the recovery block. The method of claim 6, The outer peripheral surface of the support member, Substrate processing apparatus, characterized in that inclined so as to move away from the center of the support member toward the bottom. The method of claim 7, wherein The substrate processing apparatus, And a top cover positioned at an upper portion of the substrate seated on the support member to guide the treatment liquids injected into the substrate to the inflow line during the process. The method of claim 6, The interval between the inner surface of the recovery block and the outer peripheral surface of the support member, Substrate processing apparatus, characterized in that 1mm to 5mm. The method of claim 7, wherein The inclination of the outer peripheral surface and the inner surface, It is 20 degrees-70 degrees, The substrate processing apparatus characterized by the above-mentioned. The method of claim 5, The pressure regulating member, And vacuum chambers formed in the recovery block to communicate with the respective recovery chambers, and wherein each internal pressure is independently controlled. The method of claim 11, The recovery rooms, Provided in an annular shape and stacked on top of each other, The vacuum chambers, Substrate processing apparatus, characterized in that provided to surround the recovery chamber corresponding to each. The method of claim 12, On the upper surface of each said collection chamber, Substrate processing apparatus, characterized in that the blocking projection protruding downward to prevent the processing liquid from flowing into the vacuum chamber. The method according to claim 3 or 4, The treatment liquid recovery unit, A housing formed to surround the outside of the support member, and having a space for recovering the used processing liquids therein; And partition walls for partitioning the interior of the housing into a plurality of recovery chambers. The method of claim 14, The partition walls, A vertical wall installed vertically in the housing; An upper wall extending horizontally from an upper end of the vertical wall toward an outer circumferential surface of the support member; And the main line is provided between an end of each of the upper walls and an outer circumferential surface of the support member. The method of claim 15, Each of the upper walls, Has a structure stacked up and down, The branch line is, And a space provided between the upper walls. The method of claim 16, The outer peripheral surface of the support member, Substrate processing apparatus, characterized in that inclined so as to move away from the center of the support member toward the bottom. The method of claim 17, The substrate processing apparatus, And a top cover positioned at an upper portion of the substrate seated on the support member to guide the treatment liquids injected into the substrate to the inflow line during the process. The method of claim 17, The distance between the end of each of the upper walls and the outer peripheral surface of the support member, Substrate processing apparatus, characterized in that 1mm to 5mm. The method of claim 17, The inclination of the end of each of the upper walls and the outer peripheral surface of the support member, It is 20 degrees-70 degrees, The substrate processing apparatus characterized by the above-mentioned. The method of claim 14, The pressure control member, A plurality of discharge lines, each of which communicates with the recovery chambers; A recovery tank receiving the treatment liquid from the discharge lines and having an independent space therein for the number of treatment liquids to be recovered therein; And a pressure reducing member for reducing the pressure in the recovery tank. The method of claim 21, The treatment liquid recovery unit, And a plurality of recovery lines for recovering the processing liquids in the recovery tank. In the substrate processing method, Provide a plurality of recovery chambers for separating and recovering the processing liquid used in the process to the outside of the support member on which the substrate is placed, and proceeds the process by selectively supplying a plurality of processing liquids, the recovery chamber is a process being used in the process And recovering each treatment liquid separately by depressurizing the recovery chamber to recover the liquid from among the recovery chambers. The method of claim 23, The substrate processing method, And a height of the support member and the recovery chamber is kept constant while a plurality of processing liquids are supplied.

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