KR100739478B1 - Apparatus and method for treating substrate in a single wafer - Google Patents

Abstract

An apparatus and method for processing a substrate in a single wafer manner is provided to improve a dry efficiency of the substrate by preventing turbulent flow or vortex flow of a dry gas in a space between a processed surface of the substrate and a lower surface of a cover. An apparatus includes a housing having a space in which a substrate is cleaned and dried, and a support member installed in the housing for supporting and rotating the substrate in the housing. A cover(310) has a lower surface opposite to a processed surface of the substrate supported by the support member, and at least one spray line formed on a center of the lower surface for injecting a dry gas onto the processed surface. The lower surface is inclined at such an angle to be gradually increased from a center region to an edge region.

Description

Sheet substrate processing apparatus and method {APPARATUS AND METHOD FOR TREATING SUBSTRATE IN A SINGLE WAFER}

1 is a perspective view of a sheet type substrate processing apparatus according to the present invention.

2 is a plan view of a sheet type substrate processing apparatus according to the present invention.

3 is a configuration diagram of a sheet type substrate processing apparatus according to the present invention.

4 is a diagram illustrating an internal configuration of the protective cover of FIG. 3.

5 is an internal configuration of a protective cover according to another embodiment of the present invention.

6 is an internal configuration of a protective cover according to another embodiment of the present invention.

7 is a flow chart showing a single wafer processing method according to the present invention.

8A to 8F are diagrams for describing a process of a substrate processing apparatus according to the present invention.

9 is a view for explaining the effect of the protective cover according to an embodiment of the present invention.

10 is a view for explaining the effect of the protective cover according to another embodiment of the present invention.

11 is a view for explaining the effect of the protective cover according to another embodiment of the present invention.

* Description of symbols on the main parts of the drawings *

10: substrate processing apparatus

100: process chamber

200: first supply part

300: second supply unit

400: control unit

The present invention relates to a sheet type substrate processing apparatus and method, and more particularly, to an apparatus and method for cleaning and drying a semiconductor substrate using a plurality of processing fluids.

In general, semiconductor manufacturing apparatus are manufactured by repetitive performance of unit processes such as deposition, photolithography, etching, chemical mechanical polishing, cleaning, drying, and the like. Among the unit processes, the cleaning and drying processes are used to remove foreign substances or unnecessary films remaining on the surface of the semiconductor substrate during the respective unit processes.

In the apparatus for performing the cleaning and drying process, the single sheet cleaning apparatus supports and rotates a single wafer by a spin chuck, and then sequentially or selectively sprays the cleaning liquid, rinse liquid, and dry gas onto the processed surface of the rotating substrate. Thereby processing the wafer. In this case, the sheet cleaning apparatus places the cover having a lower surface spaced apart from the processing surface of the wafer adjacent to the wafer in order to maximize the prevention of contact of the substrate surface with external oxygen during the wafer drying process. The drying gas was sprayed to the processing surface of the wafer through the injection hole provided in the lower surface of the wafer to dry the wafer.

However, in the above-described sheet type substrate processing apparatus, the dry gas injected into the processing surface of the substrate during the drying process of the wafer during the process did not smoothly escape the space between the processing surface of the wafer and the lower surface of the cover. That is, the dry gas injected into the processing surface of the wafer during the drying process collides with the processing surface of the wafer and irregularly changes the airflow between the processing surface of the wafer and the lower surface of the cover to generate vortices and turbulence. The generation of the vortex and turbulence of the dry gas introduces a floating contaminant such as particles into the space between the processing surface of the wafer and the lower surface of the cover, contaminating the surface of the wafer and reducing the process yield.

In order to solve the above problems, an object of the present invention is to provide a sheet type substrate processing apparatus and method for improving the cleaning and drying efficiency of a substrate. In particular, it is an object of the present invention to provide a sheet type substrate processing apparatus and method for preventing dry gas and turbulence generated by collision of a dry gas used in a substrate drying process with a processing surface of a substrate.

The substrate processing apparatus according to the present invention for achieving the above object is a housing that provides a space for performing a cleaning and drying process of the substrate therein, a support member for supporting and rotating the substrate in the housing during the process, the process The cover has a lower surface facing the processing surface of the substrate supported by the support member in the progress, the lower surface includes a cover formed with at least one injection line for injecting dry gas to the processing surface, the lower The face is inclined upwardly from the center region to the edge region.

According to an embodiment of the present invention, the lower surface has a convex shape downward.

According to an embodiment of the present invention, the sheet type substrate processing apparatus is provided between the housing and the support member to separate and recover the processing liquids injected into the processing surface of the substrate supported by the support member during the process. The recovery container further includes.

According to one embodiment of the invention, the injection line includes a first line for injecting dry gas vertically toward the center region of the substrate, the first line is formed so that the opening diameter increases downwards, Some of the dry gas is injected vertically downward, and the other of the dry gas is injected in a direction away from the center of the lower surface.

According to one embodiment of the invention, the inner side of the first line is rounded.

According to another embodiment of the present invention, the injection line includes a second line for injecting dry gas into a region other than the central region of the substrate, wherein the second line is directed away from the center of the substrate processing surface. Inject dry gas.

According to another embodiment of the present invention, the injection line is a plurality of first lines and a plurality of branches branched from the first line for injecting dry gas in the downward direction and sprays dry gas to a region other than the central region of the substrate Including a second line to the test, wherein the first line is formed so that the opening diameter is increased downwards, some of the dry gas is vertically sprayed in the downward direction, the rest of the dry gas is the center of the lower surface As it moves away from the side toward the side inclined downward, the second line injects dry gas in a direction away from the center of the substrate processing surface.

According to another embodiment of the invention, the inner side of the first line is rounded.

In the substrate processing method according to the present invention for achieving the above object is to cover the processing surface of the substrate by placing a cover facing the processing surface of the substrate spaced apart from the processing surface of the substrate, the cleaning process is performed with at least one processing liquid The substrate is dried by injecting dry gas into the processing surface of the substrate through an injection hole formed in the lower surface of the cover while being blocked from outside air, and the lower surface is upwardly moved from the center region of the lower surface to the edge region. It is inclined so that the dry gas injected through the injection hole is guided along the lower surface without the generation of vortices and turbulence between the treatment surface and the lower surface and escapes from the space.

According to an embodiment of the present invention, the dry gas injected through the injection hole is injected into the central region of the substrate, some of the dry gas is injected vertically downward, the remaining of the dry gas is the substrate processing surface It is sprayed in a direction away from the center of.

According to another embodiment of the present invention, the dry gas injected through the injection hole is injected to a region except the central region of the substrate, it is injected in a direction away from the center of the processing surface.

According to another embodiment of the present invention, the dry gas injected through the injection hole is injected over the entire processing surface of the substrate, some of the dry gas injected to the central region of the substrate is injected vertically downward, The remainder is sprayed in a direction away from the center of the substrate processing surface, and the dry gas injected into an area except the central region is sprayed in a direction away from the center of the substrate processing surface.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed subject matter is thorough and complete, and that the spirit of the present invention to those skilled in the art will fully convey.

In addition, in the present embodiment, a semiconductor substrate, that is, an apparatus for performing the etching, cleaning, and rinsing process of a wafer by sheet type, has been described as an example. It can be applied to any semiconductor and flat panel display manufacturing apparatus that performs.

(Example)

1 is a perspective view of a sheet type substrate processing apparatus according to the present invention, and FIG. 2 is a plan view of a sheet type substrate processing apparatus according to the present invention. 3 is a configuration diagram of the sheet type substrate processing apparatus according to the present invention, and FIG. 4 is an internal configuration diagram of the protective cover illustrated in FIG. 3.

Referring to FIG. 1, an apparatus for treating substrate in a single wafer 10 according to the present invention includes a process treating member 100 and a first supply member 200. ), A second supply member 300, and a controller (400 of FIG. 3). The process chamber 100 provides a space for performing a substrate processing process therein. Here, the substrate processing step is a step of cleaning, rinsing and drying the semiconductor substrate. The first supply unit 200 injects a treating liquid to the processing surface of the substrate located in the process chamber 100 during the process, and the second supply unit 300 in the process chamber 100 during the process. Dry gas is injected into the processing surface of the substrate located at. In this case, the treatment liquid includes first and second chemical liquids and deionized water (DIW). In addition, the controller 400 controls the process chamber 100, the first supply unit 200, and the second supply unit 300.

Referring to FIG. 2, the controller 400 moves the first supply unit 200 between the process position a and the standby position b, and moves the first supply unit 200 between the process position a and the standby position b '. 2 moves the supply unit 300. The process position (a) is a position for injecting the processing liquid into the processing surface of the substrate loaded inside the process chamber 100 by the first supply unit 200 during the process, and the standby position (b) is the process The first supply part 200 waits outside the process chamber 100 before being moved to the position a. In addition, the process position a 'is a position at which the second supply unit 300 injects dry gas to the processing surface of the substrate loaded inside the process chamber 100 during the process, and the standby position b' ) Is a position where the second supply part 300 waits outside the process chamber 100 before moving to the process position a '. Accordingly, the control unit 400 may supply the processing liquid and the dry gas to the substrate loaded in the process chamber 100 by alternately supplying the first supply unit 200 and the second supply unit 300 during the process. And the second supply unit 300.

Referring to FIG. 3, the process chamber 110 may include a housing 110, a support member 120, a driven member 130, and a recycle member 140. Include. The housing 110 provides a space therein for performing the substrate treatment process. The housing 110 has a cylindrical shape with an open top. The open upper portion of the housing 110 is used as a substrate entrance through which the substrate W is made to enter and exit during the process.

The support member 120 supports the substrate W during the process. The support member 120 moves up and down and rotates inside the housing 110. Chucking pins 122 are provided on the support member 120. Each of the chucking pins 122 chucks a portion of the edge of the substrate W to prevent the substrate W from being separated from the support member 120.

The driver 130 drives the support member 120. The driver 130 rotates the support member 120 and drives the device up and down. In particular, the driving unit 130 drives the support member 120 so that the treatment liquids injected into the support member 120 during the process are recovered to the recovery member 140.

The recovery member 140 recovers the treatment liquids used in the process. The recovery member 140 includes first to third recovery containers 142, 144, and 146. The first to third recovery containers 142, 144, and 146 are stacked up and down at the side of the support member 120. The interior of each of the first to third recovery containers 142, 144, and 146 is provided with a space for receiving the treatment liquid used in the process. In addition, first to third recovery lines 142a, 144a, and 146a are connected to each of the first to third recovery containers 142, 144, and 146. Each of the first to third recovery lines 142a, 144a, and 146a recovers the treatment liquid recovered to the first to third recovery barrels 142, 144, and 146 to a treatment liquid regeneration unit (not shown). Here, the treatment liquid regeneration unit is a facility for controlling the temperature and concentration of each treatment liquid, and removing contaminants, for reuse of the treatment liquids used in the substrate treatment process. In the present embodiment, the recovery member 140 having three recovery containers 142, 144, and 146 has been described as an example. However, the number of recovery containers may be changed according to the number of treatment liquids to be recovered.

The first supply unit 200 supplies the processing liquid onto the substrate W during the process. The first supply part 200 includes a nozzle member 210, a nozzle member driven part 220, and a treating-liquid supply part 230. The nozzle unit 210 supplies the processing liquid to the processing surface of the substrate W seated on the support member 120 during the process. The nozzle unit 310 is provided with three nozzles (not shown). Each nozzle sprays a first chemical liquid, a second chemical liquid, and ultrapure water.

The nozzle unit driver 220 drives the nozzle unit 210. The nozzle driver 220 includes a first arm 222, a second arm 224, and a first drive 226. The first arm 222 is installed substantially horizontally at the top of the process chamber 100, and the second arm 224 is installed substantially vertically at the side of the process chamber 100. The first driving unit 226 moves the nozzle unit 210 between the process position (a) and the standby position (b) by operating the first and second arms 222 and 224 organically with each other.

The treatment liquid supply member 230 supplies the first and second chemical liquids and ultrapure water to the nozzle unit 210. The treatment liquid supply member 230 includes a first chemical supply part 232, a second chemical supply part 234, and a DIW supply part 236. . The first chemical liquid supplier 232 has a first chemical liquid supply source 232a and a first chemical liquid supply line 232b. The second chemical liquid supplier 234 has a second chemical liquid supply source 234a and a second chemical liquid supply line 234b. The ultrapure water supplier 234 has an ultrapure water supply source 234a and an ultrapure water supply line 234b.

The second supply unit 300 supplies a dry gas on the substrate W during the process. The second supply part 300 includes a cover 310, a cover driven member 320, and a dry-gas supply part 330. The cover 310 supplies dry gas to the processing surface of the substrate W seated on the support member 120 during the process. Referring to FIG. 4, the cover 310 includes a body 312 and a spray line 314. Body 312 has a generally disc shape. The lower surface 312a of the body 312 is inclined upward toward the edge region from the center region of the lower surface 312a. The bottom surface 312a has a generally convex downward shape. The lower surface 312a is positioned to face a predetermined interval with the processing surface of the substrate W during the process. That is, when the cover 310 is positioned at the process position a 'during the process, the lower surface 312a is opposed to the processing surface of the substrate W, and the substrate is gradually moved from the center region to the edge region of the lower surface 312a. It is produced so that the distance to the processing surface of (W) gradually increases. At this time, the inclination angle of the lower surface 312a can be variously changed.

The spray line 314 is vertically formed vertically in the center of the body 312. At the end of the spray line 314, an injection hole 314a for injecting dry gas into the processing surface of the substrate W during the process is formed. The injection line 314 is formed so that the opening diameter gradually increases from the top toward the injection hole 314a. At this time, the inner surface of the injection line 314 is rounded. Therefore, some of the dry gas injected through the injection line 314 is vertically injected downward, the remaining of the dry gas inclined downward downward from the center region of the substrate (W) processing surface toward the downward direction Is sprayed on.

In this embodiment, the cover 310 in which one spray line 314 is formed has been described as an example, but the number and shape of the spray lines 314 provided in the cover 310 may be variously changed and modified. . For example, referring to FIG. 5, a cover 310 ′ according to another embodiment of the present invention has a body 312 ′ and a spray line 314 ′. The body 312 'has a lower surface 312a' having the same structure as the lower surface 312a described above. Injection line 314 'has a first line 314a' and a second line 314b '. The first line 314a 'is vertically formed vertically in the body 312', and a plurality of second lines 314b 'are branched from the first line 314a'. At the end of the second line 314b ', injection holes 312a' are formed to inject dry gas into a region other than the central region of the substrate W. FIG.

In the cover 310 ′ having the above-described structure, dry gas supplied to the first line 314a ′ is uniformly distributed to the second line 314b ′ and supplied to the respective injection holes 312a ′. . Here, each of the injection holes 312a ′ is an area (hereinafter referred to as a “second area”) except for a central area (hereinafter, referred to as a “first area”) X1 of the substrate W during the process. While spraying the dry gas, the inclination of the dry gas is injected in a direction away from the center of the substrate (W). Accordingly, the cover 310 ′ having the above-described structure has a space between the processing surface of the substrate W and the lower surface 312 ′ of the cover 310 ′ when dry gas injected into the processing surface of the substrate W during the process. Can be easily exited.

Alternatively, referring to FIG. 6, the cover 310 ″ according to another embodiment of the present invention has a body 312 ″ and an injection line 314 ″. The shape of the body 312 ″ is the same as the body 312, 312 ′ described above. The injection line 314 ″ is the same as the first line 314 ″ and the second line of the injection line 314 ′ according to another embodiment of the present invention. Second lines 314a ″ and 314b ″ having the same structure as 314b ′. Accordingly, the first injection hole 314a ″ and the second injection hole 314b are formed in the lower surface 312a ″ of the body 312 ″. The cover 310 ″ having the above-described structure injects dry gas into the first region X1 of the substrate W of the substrate W through the first injection hole 312 a ″ during the process, and then sprays the first gas. Dry gas is injected into the second region X2 through the hole 314b. Therefore, the dry gas injected through the injection line 314 is injected toward the entire processing surface of the substrate W, some of the dry gas is injected vertically downward, and the rest of the dry gas of the substrate W Spray in a direction away from the center.

The controller 400 controls the substrate processing apparatus 10 described above. That is, the controller 400 controls the driving unit 130 to control the height and rotation speed of the support member 120 during the process. In addition, the controller 400 controls the first driving device 226 to operate the nozzle unit 210 and controls the second driving device 326 to operate the protective cover 310. In addition, the controller 400 controls the processing liquid supply member 230 and the dry gas supply member 330 to control the supply of the first and second chemical liquids, ultrapure water, and dry gas during the process.

Hereinafter, the process of the substrate processing apparatus 10 described above will be described in detail. Here, the same reference numerals of the same components as the above-described components, and the detailed description of the components are omitted.

7 is a flowchart illustrating a sheet-fed substrate processing method according to the present invention, and FIGS. 8A to 8F are diagrams for describing a process of the substrate processing apparatus according to the present invention. 9 to 11 are views for explaining the effect of the protective cover according to one, another, and another embodiment of the present invention.

Referring to FIG. 7, when the process of the substrate processing apparatus 10 according to the present invention is started, the substrate W is loaded in the process chamber 110 (S110). That is, referring to FIG. 8A, the controller 400 controls the driving unit 130 to move the support member 120 to the loading / unloading position L1. The loading / unloading position L1 is a position for loading or unloading the substrate W on the support member 120 during the process. When the supporting member 120 is positioned at the loading / unloading position L1, the substrate W is fixed to the supporting member 120 and then fixed by the chucking pins 122a. When the substrate W is fixed by the chucking pins 122a, a process of cleaning the foreign matter remaining on the surface of the substrate W is performed (S120). The cleaning process of the substrate W is as follows.

Referring to FIG. 8B, the controller 400 controls the driving unit 130 to move the supporting member 120 from the loading / unloading position L1 to the first process position L2 and then to the supporting member 120. Rotate at process speed. The first process position L2 is a position of the support member 120 for cleaning the substrate W with the first chemical liquid. The controller 400 controls the first driving device 226 to move the nozzle unit 210 from the standby position b to the process position a.

When the nozzle unit 210 is positioned at the process position a, the first chemical is sprayed onto the processing surface of the substrate W to clean the substrate W. That is, the control unit 400 opens the valve V1 and controls the driving unit 130 to rotate the support member 120. Accordingly, the first chemical liquid supply line 232b supplies the first chemical liquid from the first chemical liquid supply source 232a to the nozzle unit 210. The first chemical liquid sprayed through the nozzle unit 210 primarily cleans foreign substances remaining on the surface of the substrate (W). The first chemical liquid having cleaned the substrate W is moved from the center region of the substrate W to the edge region of the substrate W by the centrifugal force of the rotating substrate W, and is then scattered from the substrate W to recover the first. Recovered to barrel 142. The first chemical liquid recovered to the first recovery container 142 is recovered to the treatment liquid regeneration unit (not shown) through the first recovery line 142a.

When the substrate W is first cleaned using the first chemical liquid, the substrate W is secondarily cleaned using the second chemical liquid (S130). That is, referring to FIG. 8C, the controller 400 closes the valve V1 and controls the driving unit 130 to move the support member 120 from the second process position L2 to the third process position L3. Move it. Here, the third process position L3 is a position of the support member 120 for cleaning the foreign matter remaining on the substrate W with the second chemical liquid. When the support member 120 is positioned at the third process position L3, the controller 400 opens the valve V2 so that the first chemical liquid supply line 234b is connected to the nozzle portion (2) from the second chemical liquid supply source 234a. 210 to supply the second chemical liquid.

The second chemical liquid sprayed through the nozzle unit 210 secondly cleans the foreign substances remaining on the surface of the substrate W. The first chemical liquid having cleaned the substrate W is moved from the center region of the substrate W to the edge region of the substrate W by the centrifugal force of the rotating substrate W, and is then scattered from the substrate W to recover the second. Recovered to barrel 144. The second chemical liquid recovered into the second recovery container 144 is recovered to the processing liquid regeneration unit (not shown) through the second recovery line 144a.

When the cleaning process of the substrate W is completed, the substrate is rinsed with ultrapure water (S130). That is, referring to FIG. 8D, the controller 400 closes the valve V2 and then drives the first driving device 216 to drive the nozzle unit 210 to the support member 120 at the third process position L3. To the fourth process position L4. Here, the fourth process position L3 is a position of the support member 120 for rinsing the first and second chemical liquids remaining on the surface of the substrate W. As shown in FIG. In addition, the fourth process position L4 is a position of the support member 120 on which the drying process of the substrate W is performed.

When the support member 120 is positioned at the fourth process position L4, the controller 400 opens the valve V3. Therefore, the ultrapure water supply line 332b supplies ultrapure water from the ultrapure water supply source 332a to the nozzle unit 210. The ultrapure water injected through the nozzle unit 210 rinses the first and second chemical liquids remaining on the surface of the substrate (W). The ultrapure water rinsing the substrate W is moved from the center region of the substrate W to the edge region of the substrate W by the centrifugal force of the rotating substrate W, and is then scattered from the substrate W so that the third recovery container ( 146). The ultrapure water recovered by the third recovery container 146 is recovered to the treatment liquid regeneration unit (not shown) through the third recovery line 146a.

When the rinse process of the substrate W is completed, the drying process of the substrate W is performed. The drying process of the substrate W is as follows. Referring to FIG. 8E, the controller 400 closes the valve V3 and controls the first driving device 226 to move the nozzle unit 210 from the process position a to the standby position b. In addition, the controller 400 controls the second driving device 226 to move the cover 310 from the standby position b 'to the process position a' (S140).

When the cover 310 is located at the process position a ', the control unit 400 opens the valve V4 so that the dry gas supply line 334 is dry gas from the dry gas supply source 322 to the cover 310. To supply (S150). Referring to FIG. 9, the dry gas supplied to the cover 310 is moved along the spray line 314 and then sprayed to the processing surface of the substrate W through the spray hole 314a. In this case, some of the dry gas is vertically injected into the center region of the substrate W by the injection line 314 in which the opening diameter is gradually increased downward, and the remaining gas is far from the center of the substrate W. Sprayed in the direction. The dry gas collided with the processing surface of the substrate W is formed from the first region X1 of the substrate W along the space between the processing surface of the substrate W and the lower surface 312a of the cover 310. It is discharged while moving to the second region (X2). At this time, since the interval between the processing surface and the lower surface 312a is gradually increased toward the edge, the drying gas injected into the first region X1 of the substrate W is treated as the processing surface of the substrate W. The space between the lower surface 312a and the space effectively exits the space without the occurrence of vortices and turbulence.

In addition, referring to FIG. 10, the cover 310 ′ according to another embodiment of the present invention injects dry gas into the remaining portions except for the first region of the substrate W during the process, and the respective injection holes 314a. ') May inject dry gas away from the center of the substrate W, thereby preventing the phenomenon in which turbulences and vortices are concentrated in the first region X1 of the substrate W. However, the cover 310 ′ may not effectively dry the first region X1 of the substrate W. As shown in FIG. 11, the cover 310 ″ according to another embodiment of the present invention may be The substrate W can be dried by simultaneously spraying dry gas toward the first region X1 and the second region X2 of the substrate W during the process. At this time, the flow of the dry gas includes both the flow of the dry gas in one and another embodiment of the present invention.

When the drying process of the substrate W is completed, the controller 400 controls the second driving device 326 to move the cover 310 from the process position a 'to the standby position b' (S160). . 8F, the driving unit 130 is controlled to move the support member 120 from the fourth process position L4 to the loading / unloading position L1. When the supporting member 120 is positioned at the loading / unloading position L1, the chucking pins 122a unchuck the substrate W, and the substrate W is unloaded from the supporting member 120. unloaded and returned to a facility (not shown) where subsequent processing is performed.

The above-described substrate processing apparatus and method includes a cover 310 that faces the processing surface of the substrate W and blocks the processing surface of the substrate W from the outside air during the drying process of the substrate W, but includes a cover 310. The bottom surface 312a of) is manufactured to be inclined upward from the center to the edge. Therefore, the dry gas injected through the cover 310 can effectively escape the space between the processing surface of the substrate W and the lower surface 312a of the cover 310, so that the airflow of the conventional sprayed dry gas is Vortex and turbulence in the space prevent external contaminants from entering the space and contaminate the substrate (W).

The foregoing detailed description illustrates the present invention. In addition, the foregoing description merely shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications may be made within the scope of the concept of the invention disclosed in this specification, the scope equivalent to the disclosed contents, and / or the skill or knowledge in the art. The above-described embodiments are for explaining the best state in carrying out the present invention, the use of other inventions such as the present invention in other state known in the art, and the specific fields of application and uses of the present invention. Various changes are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to include other embodiments.

As described above, in the sheet-fed substrate processing apparatus and method according to the present invention, the air flow of the dry gas injected into the processing surface of the substrate during the drying process of the substrate is turbulent and vortexized in the space between the processing surface of the substrate and the lower surface of the cover This prevents the substrate drying efficiency from being lowered, thereby improving the drying efficiency of the substrate.

Claims (7)

In the apparatus for processing a substrate by sheet type, A housing providing a space therein for performing the cleaning and drying process of the substrate; A support member for supporting and rotating the substrate in the housing during the process; The cover has a lower surface facing the processing surface of the substrate supported by the support member during the process, the center of the lower surface includes a cover formed with at least one injection line for injecting dry gas to the processing surface, The lower surface is, Single sheet substrate processing apparatus, characterized in that the inclined upward toward the edge region from the center region. The method of claim 1, The lower surface is, The sheet type substrate processing apparatus which is convex below. The method according to claim 1 or 2, The injection line, Including a first line for injecting dry gas vertically toward the center region of the substrate, The first line is, It is formed to increase the opening diameter toward the bottom, part of the dry gas is sprayed vertically in the downward direction, and the remainder of the dry gas is sprayed in a direction away from the center of the lower surface Device. The method of claim 3, wherein The inner side surface of the first line is Sheet-fed substrate processing apparatus, characterized in that the rounded. The method according to claim 1 or 2, The injection line, It includes a second line for injecting dry gas to a region other than the central region of the substrate, The second line is, Single sheet substrate processing apparatus characterized by injecting a dry gas in a direction away from the center of the substrate processing surface. The method according to claim 1 or 2, The injection line, A first line for injecting dry gas vertically in a downward direction and a second line branched from the first line in a plurality and spraying dry gas to a region other than the central region of the substrate, The first line is, The opening diameter is formed to increase toward the bottom, so that some of the dry gas is vertically sprayed in the downward direction, and the remainder of the dry gas is sprayed inclined downward toward the side from the center of the lower surface, The second line is, Single sheet substrate processing apparatus characterized by injecting a dry gas in a direction away from the center of the substrate processing surface. The method of claim 6, The inner side surface of the first line is Sheet-fed substrate processing apparatus, characterized in that the rounded.

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