KR20090016974A - Facility and method for treating substrate - Google Patents

Abstract

A facility for treating substrate and a method thereof are provided to improve removal efficiency of photoresist solution by treating a substrate with supercritical fluid. A process for treating a substrate is performed by a process chamber(20). A supercritical fluid is supplied to the process chamber by a supercritical fluid supplying device(10). The supercritical fluid supplying device includes a treating gas supplying member, a treating liquid supplying member(14), and a plurality of mixing members(16A, 16B, 16C). The treating gas and the treating liquid are supplied from the treating gas supplying member and the treating liquid supplying member to each mixing member.

Description

Substrate Processing Facility and Method {FACILITY AND METHOD FOR TREATING SUBSTRATE}

The present invention relates to a substrate processing equipment and method, and more particularly, to a facility for processing a substrate using a supercritical fluid and a substrate processing method of the equipment.

Typical semiconductor fabrication processes include processing on the wafer, such as cleaning, applying, depositing, developing, ion implantation, chemical mechanical leveling, and etching. Among these treatment processes, an etching process is a process of removing unnecessary foreign substances on the wafer surface. The etching process is divided into a dry etching process and a wet etching process. Among them, the dry etching process supplies various kinds of processing gases to the wafer surface to remove unnecessary foreign substances on the wafer surface.

Recently, a technique of removing photoresist on the wafer surface using a supercritical fluid is used. An apparatus for removing the photoresist on the wafer surface using a supercritical fluid has a chamber. In general, a photoresist removal apparatus using a supercritical fluid pressurizes the chamber to a predetermined pressure after placing the wafer inside the chamber during the process. Then, a processing liquid for removing carbon dioxide and photosensitive liquid is supplied into the chamber to generate a supercritical fluid within the chamber to remove the photosensitive liquid on the wafer surface.

However, the photoresist removal apparatus using such a supercritical fluid has the following problems.

First, the substrate throughput of the device is low. That is, a general photosensitive liquid removing apparatus removes the photosensitive liquid from the wafer surface by placing a wafer inside the chamber and generating a supercritical fluid that satisfies a predetermined concentration and temperature within the chamber. However, since the process takes a lot of time to produce a supercritical fluid that satisfies a predetermined concentration and temperature inside the chamber, and also a lot of time to adjust the pressure in the chamber to a predetermined pressure, the substrate throughput of the device is low. .

Second, the process time is increased due to the time due to the pressurization of the chamber. That is, a device for removing the photoresist using a general supercritical fluid should adjust the inside of the chamber to a predetermined pressure and temperature whenever the sheet wafers are processed. However, this approach increases process processing time because much time is spent adjusting the pressure and temperature of the chamber to a predetermined pressure and temperature.

Third, it is difficult to keep the concentration of supercritical fluid constant. That is, a general photosensitive liquid removing apparatus supplies a processing liquid for removing carbon dioxide and a photosensitive liquid to a chamber during a process to generate a supercritical fluid satisfying a predetermined concentration inside the chamber. However, this method results in non-uniform photoresist removal because the concentration of supercritical fluid generated inside the chamber is not constant.

The present invention provides a substrate processing facility and method for improving the substrate throughput of an apparatus.

The present invention provides a substrate processing apparatus and method for improving the photoresist removal efficiency.

The present invention provides a substrate processing apparatus and method for maintaining a constant concentration of supercritical fluid.

Substrate processing equipment according to the present invention for solving the above problems includes a process chamber for performing a substrate processing process and a supercritical fluid supply device for generating a supercritical fluid to supply the supercritical fluid generated to the process chamber The supercritical fluid supply device receives a processing gas and a processing liquid from a processing gas supply member for supplying a processing gas, a processing liquid supply member for supplying a processing liquid, and each of the processing gas supply member and the processing liquid supply member. It includes a plurality of mixing members.

According to an embodiment of the present invention, each of the mixing members includes a production vessel providing a space for generating a supercritical fluid therein, a heater for heating the housing, and an agitator for mixing the processing gas and the processing liquid in the housing. do.

According to an embodiment of the present invention, the treatment liquid supply member is installed in a treatment liquid supply source for storing the treatment liquid, a treatment liquid supply line for supplying the treatment liquid from the treatment liquid supply source to the production container, and the treatment liquid supply line. And a second pressing member pressurizing the processing liquid moved along the processing liquid supply line.

According to an embodiment of the present invention, the process chamber provides a space for processing a substrate therein and has a substrate entrance and opening at a sidewall, and a housing having an open bottom, supporting a substrate, and having an open bottom of the housing. And a driving member for driving the supporting member up and down, wherein the driving member has a process position in which the upper surface of the supporting member is higher than the height of the substrate entrance and the upper portion of the supporting member. The surfaces move between the standby positions located at positions lower than the height of the substrate entrance.

According to an embodiment of the invention, the process chamber further comprises a fixing member for physically fixing the support member to the housing when the support member is located in the process position, the fixing member is the housing during the process It includes a fixed block inserted into the groove formed on the inner side of the driver for linear reciprocating movement of the fixed block.

In the substrate processing method according to the present invention for solving the above problems, the processing liquid for removing the photosensitive liquid is propelled by the processing gas and then supplied to a plurality of production containers, and the production containers are supplied with the processing liquid and the processing. The gas is heated to a predetermined temperature to generate a supercritical fluid and supplied to the process chamber, and the supercritical fluid supply of the production vessels is alternately performed.

According to an embodiment of the present invention, when the supercritical fluid is supplied to the production vessels, when one of the production vessels supplies the supercritical fluid to the process chamber, the other production vessel among the production vessels may be configured to supply the supercritical fluid. Create

The substrate processing equipment and method according to the present invention shortens the substrate processing process time, thereby improving the substrate throughput of the apparatus.

The substrate processing equipment and method according to the present invention efficiently remove the photosensitive liquid formed on the wafer surface.

Substrate processing equipment and method according to the invention proceeds by maintaining the concentration of the supercritical fluid to a predetermined concentration value.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments presented herein are provided so that the disclosure will be thorough and complete, and will fully convey the spirit of the invention to those skilled in the art. Portions denoted by like reference numerals denote like elements throughout the specification.

In addition, in the present embodiment, the ashing process apparatus for supplying a supercritical fluid to the semiconductor wafer to remove the photoresist on the wafer surface has been described as an example, but the present invention can be applied to any apparatus for processing a substrate.

(Example)

1 is a view showing a substrate processing facility according to the present invention, Figure 2 is a view showing the process chamber shown in FIG. 3 is a view showing a process chamber according to another embodiment of the present invention.

Referring to FIG. 1, a facility for treating substrate 1 according to the present invention performs a process of processing a semiconductor substrate (hereinafter, referred to as “wafer”) W. FIG. The substrate processing apparatus 1 has a super-crytical fluid supply apparatus 10 and a process apparatus 20.

The supercritical fluid supply device 10 generates a supercritical fluid for removing the photoresist on the surface of the wafer W and supplies it to the process apparatus 20. Each supercritical fluid supply device 10 includes a treating gas supply member 12, a treating liquid supply source 14, and a plurality of mixing members 16A. , 16B, 16C).

The processing gas supply member 12 supplies the processing gas to the respective mixing members 16A, 16B, and 16C. The process gas supply member 12 has a treating gas supply source 12a, a treating gas supply line 12b, and a first presurrization member 12c. .

The process gas supply source 12a stores the process gas. The process gas supply source 12a stores the process gas therein, and the stored process gas is supplied to the respective mixing members 16A, 16B, and 16C through the process gas supply line 12b during the process. Here, the processing gas is a gas pressurized at high pressure to pressurize the processing liquid. Carbon dioxide (CO2) may be used as the treatment gas.

The process gas supply line 12b supplies the process gas from the process gas supply source 12a to the respective mixing members 16. One end of the process gas supply line 12b is connected to the process gas supply source 12a, and the other end of the process gas supply line 12b is connected to the respective mixing members 16A, 16B, and 16C.

The first pressurizing member 12c pressurizes the process gas flowing in the process gas supply line 12b. A pump is used as the first pressing member 12c. The first pressurizing member 12c pressurizes the process gas to a high pressure to propel the treating liquid supplied to the respective mixing members 16A, 16B, and 16C. Therefore, the processing liquid supplied to the mixing members 16A, 16B, and 16C during the process is pushed by the processing gas to reach a pressure for satisfying the supercritical fluid state.

The processing liquid supply member 14 supplies the processing liquid to the respective mixing members 16A, 16B, and 16C. Here, the processing liquid is a liquid for removing photoresist on the wafer W surface. At least one of hydrofluoric acid (HF) or various kinds of organic solvents is used as the treatment liquid.

The treatment liquid supply member 14 has a treatment liquid supply source 14a, a treatment liquid supply line 14b, and a second pressurization member 14c. .

The processing liquid supply source 14a stores the processing liquid, and the processing liquid supply line 14b supplies the processing liquid from the processing liquid supply source 14a to the mixing members 16A, 16B, and 16C. The second pressing member 14c applies a flow pressure to the processing liquid flowing along the processing liquid supply line 14b. At this time, the second pressing member 14c pressurizes the processing liquid so that the pressure for the supercritical state is reached when the processing liquid supplied to the mixing members 16A, 16B, and 16C is supplied into the mixing member 16. do.

In addition, the second pressing member 14c supplies the processing liquid such that the processing liquid supplied to each of the mixing members 16A, 16B, and 16C is supplied to the mixing members 16A, 16B, and 16C at a predetermined flow rate during the process. The flow rate of the processing liquid flowing along the line 14b is adjusted. That is, since the processing gas and the processing liquid supplied to the mixing members 16A, 16B, and 16C during the process are mixed to form a supercritical fluid having a predetermined concentration, the second pressing member 14c is the mixing member 16A, 16B. , By adjusting the flow rate of the processing liquid supplied to the 16C, so that the concentration of the supercritical fluid generated in each of the mixing members 16A, 16B, and 16C satisfies the predetermined concentration.

Each of the mixing members 16A, 16B, and 16C receives the treatment gas and the treatment liquid from each of the treatment gas supply member 12 and the treatment liquid supply member 14, and mixes them to generate a supercritical fluid. In this case, a plurality of mixing members are provided, and each of the mixing members has substantially the same configuration. Therefore, in the present embodiment, the configurations of any one of the mixing members 16A will be described in detail.

The mixing element 16A includes a generating vessel 16a, a heater 16b, an agitator 16c, and a supercritical-fluid supply line 16d. do.

The production vessel 16a provides a space for receiving the processing gas and the processing liquid therein. The production vessel 16a is connected to the processing gas supply line 12b and the processing liquid supply line 14b on one side 16a ', and to the supercritical fluid supply line 16d on the other side 16a' '.

The heater 16b heats the inside of the production vessel 16a. The heater 16b is installed around the production vessel 16a. At this time, the heater 16b heats the production vessel 16a such that the processing liquid in the production vessel 16a is maintained in a supercritical state.

The stirrer 16c mixes the processing gas and the processing liquid injected into the production vessel 16a. The stirrer 16c includes a plurality of blades 16c 'and a drive motor 16c' '. In the process, the driving motor 16c '' rotates the blades 16c 'at a constant rotational speed, and the processing gas and the processing liquid in the production vessel 16a are mixed at a uniform concentration by the rotating blades 16c'. do.

The supercritical fluid supply line 16d supplies the supercritical fluid from the production vessel 16a to the process chamber 100 of the process chamber 20. One end of the supercritical fluid supply line 16d is connected to the other side 16a '' of the production vessel 16a and the other end is connected to the process chamber 100.

The process apparatus 20 receives a supercritical fluid from the supercritical fluid supply device 10 and performs a process of processing the wafer W. The process device 20 has at least one process chamber 100. When a plurality of process chambers 100 are provided, each process chamber 100 performs the same substrate treatment process. Alternatively, each process chamber 100 may optionally perform a different substrate treatment process.

In this embodiment, the three mixing members 16A, 16B, and 16C supply supercritical fluid to one process chamber 100 as an example. However, the number of mixing members and process chambers may be variously changed. It is possible.

Subsequently, the process chamber 100 according to the present invention will be described in detail. Referring to FIG. 2, the process chamber 100 performs an ashing process for removing the photoresist on the surface of the wafer (W). The process chamber 100 includes a housing 110, an exhaust membe 120, a support member 130, a driving member 140, and a fixing member. 150).

The housing 110 provides a space therein for performing a process of removing unnecessary photoresist on the surface of the wafer (W). The housing 110 has a cylindrical shape with an open bottom. The housing 110 consists of a side wall 112 and an upper wall 114. The side wall 112 is provided with an entrance and exit 112a for carrying the wafer W into the housing 110 during the process. A fixing groove 112b is formed on the inner side surface of the side wall 112. The fixing groove 112b is a groove into which the fixing block 152 to be described later is inserted during the process. In addition, a discharge passage 112c is provided at one side of the sidewall 112 of the housing 110. The discharge passage 112c discharges the gas in the housing 110 from the housing 110 during the process. The discharge passage 112c is preferably formed at a height corresponding to the height of the wafer W during the ashing process. This is to facilitate the discharge of the supercritical fluid supplied to the surface of the wafer (W) during the ashing process from the housing (110).

A supply passage 114a is formed in the upper wall 114 of the housing 110. The supply passage 114a supplies the supercritical fluid supplied through the supercritical fluid supply line 16d during the process into the housing 110.

In this embodiment, a case in which one supply passageway 114a is vertically formed up and down has been described as an example, but the number and angle of the supply passageway 114a may be variously changed and modified. In addition, in this embodiment, the case in which the supply passage 114a is provided on the upper wall 114 of the housing 110 has been described as an example, but the position of the supply passage may be variously changed and modified. That is, as another embodiment of the present invention, the supply passage 112d may be provided on the side wall 112 of the housing 110, as shown in FIG. In this case, the supply passage 112d and the discharge passage 112c are preferably provided to face each other at the same height. This is for the supercritical fluid supplied to the housing 110 to be effectively moved toward the discharge passage 112c after removing the photosensitive liquid on the surface of the wafer (W).

The exhaust member 120 discharges gas (eg, supercritical fluid) in the housing 110 from the housing 110 during the process. The exhaust member 120 has a discharge line 122 and a flow control valve 124. The discharge line 122 is connected to the discharge passage 112c to discharge the supercritical fluid supplied into the housing 110 during the process. The flow control valve 124 adjusts the supercritical fluid discharge of the discharge line 122. In particular, the flow control valve 124 adjusts the discharge of the supercritical fluid in the housing 110 so that the supercritical fluid supplied into the housing 110 moves with a constant flow in the housing 110 during the ashing process. .

The support member 130 supports the wafer W in the housing 110 during the process. In addition, the support member 130 opens and closes the open lower portion of the housing 110. The support member 130 has a generally cylindrical shape. The support member 130 has an upper surface for supporting the wafer W and is installed to be inserted into an open lower center of the housing 110. When the support member 130 is inserted into the open lower center of the housing 110 during the process, the inner space of the housing 110 is sealed to the outside. To this end, an inner surface of the housing 110 in contact with the support member 130 during the ashing process may be provided with a sealing means such as an o-ring.

The driving member 140 includes a support 141, an elevating part 142, an up / down plate 144, and a guide shaft 146. The support 141 is a support plate for supporting the components of the driving member 140. The elevator 142 and the guide 146 are fixed to the support 141. The elevator 142 has a lifting shaft 142a which is moved up and down. The upper end of the lifting shaft 142a is coupled with the lower part of the up / down plate 144. The up / down plate 144 is fixedly coupled with the lower portion of the support member 130. Up / down plate 144 is up and down by elevator 142. Guides 146 are provided on the up / down plates 144, respectively, to guide the up / down operations of the up / down plates 144. The guide 146 is vertically installed vertically. The upper end of the guide 146 is fixed to the housing 110, and the lower end is fixed to the support 141.

In addition, the driving member 140 moves the support member 130 between the process position (reference numeral (a) of Figure 5b) and the standby position (b). The process position (a) is the position of the support member 130 for performing the process of removing the photoresist on the wafer surface, and the standby position (b) moves the wafer (W) to the housing 110 before the photoresist removal process is performed. Position of the support member 130 for waiting outside. When the support member 130 is located at the process position (a) during the process, the height of the upper surface 132 of the support member 130 is located at a position higher than the height of the substrate entrance 112a of the housing 110. Therefore, the space in the housing 110 is completely sealed by the substrate entrance 112a being sealed by the support member 130. In addition, when the support member 130 is located at the standby position (b) during the process, the height of the upper surface 132 of the support member 130 is located at a height lower than the height of the substrate entrance 112a of the housing 110. Accordingly, the space in the housing 110 is opened by opening the substrate entrance 112a by the support member 130.

The fixing member 150 fixes the support member 130 to the housing 110 during the process. The fixing member 150 includes a fixing block 152 and a driving part 154. The fixed block 152 is disposed below the support member 130. The fixed block 152 is moved left and right by the driver 154. At least one fixing block 152 is provided. When a plurality of fixed blocks 152 are provided, each of the fixed blocks 152 is disposed at equal intervals based on the center of the support member 130.

The driver 154 moves the fixed block 152 between the fixed position (reference numeral p1 in Fig. 5C) and the standby position p2. The fixed position p1 is a fixed block when the support member 130 is positioned at the process position a and the fixed block 152 is inserted into the fixed groove 112b formed in the side wall 112 of the housing 110. 152 is the position. When the fixing block 152 is inserted into the fixing groove 112b and positioned at the fixing position p1 during the process, the supporting member 130 is completely fixed to the housing 110. In addition, the stand-by position p2 is such that when the support member 130 is moved between the stand-by position b and the process position a, the up-down operation of the support member 130 is not prevented by the fixing block 152. The location of the fixed block 154 provided. When the fixed block 152 is located in the standby position p2, the side surface 154a of the fixed block 152 is located inward of the side surface of the support member 130.

Hereinafter, the process of the substrate processing apparatus 1 described above will be described in detail. Figure 4 is a flow chart showing the process of the substrate processing equipment according to the present invention. 5A to 5F are views for explaining a process of the substrate processing apparatus according to the present invention. 6A to 6C are diagrams for describing a supercritical fluid supply process of the supercritical fluid supply device according to the present invention.

When the process starts, the supercritical fluid generating chamber 10 generates a supercritical fluid, and the process chamber 20 receives a supercritical fluid from the supercritical fluid supply chamber 10 to process the wafer W. To perform.

Referring to FIG. 4, the wafer W is loaded on the support member 130 of the process chamber 10 (S100). That is, referring to FIGS. 5A and 5B, the wafer W is placed on the support member 130 positioned at the standby position b by a robot arm (not shown). When the wafer W is placed on the support member 130, the elevator 142 of the driving member 140 raises the lifting shaft 142a to raise the up / down plate 144. Due to the rise of the up / down plate 144, the support member 130 is moved from the standby position b to the process position a. When the support member 130 is located at the process position (a), the upper surface 132 of the support member 130 is positioned at a position higher than the height of the doorway 112c. Thus, the substrate entrance 112a is completely sealed by the support member 130.

When the support member 130 is located at the process position (a), the support member 130 is fixed to the housing 110 (S200). That is, referring to FIG. 5C, the driver 154 of the fixing member 150 moves the fixing block 152 from the standby position p2 to the fixing position p1. When the fixing block 152 is moved to the fixing position p1, the fixing block 152 is inserted into the fixing groove 112b formed in the housing 110. When the fixing block 152 is inserted into the fixing groove 112b, the supporting member 130 is completely fixed to the housing 110.

When the support member 130 is completely fixed to the housing 110, the supercritical fluid supply device 10 generates a supercritical fluid that satisfies a predetermined concentration and temperature among the mixing members 16A, 16B, and 16C. Supercritical fluid is supplied to the process chamber 100 from one mixing member (S300). A process of alternately supplying the supercritical fluid of the mixing members 16A, 16B, and 16C of the supercritical fluid supply device 10 will be described later.

The process apparatus 100 receives the supercritical fluid from the supercritical fluid generating device 10 and removes the photosensitive liquid on the surface of the wafer W (S400). That is, referring to 5d, the supercritical fluid supply line 16d supplies the supercritical fluid from the first mixing member 16 to the housing 110. At this time, the supercritical fluid supplied into the housing 110 through the supply passage 114a of the housing 110 is supplied toward the wafer W placed on the support member 130. The supercritical fluid supplied to the wafer W removes the photosensitive liquid on the wafer W surface.

At this time, the exhaust member 120 adjusts the pressure in the housing (110). That is, the inside of the housing 110 is pressurized to a high pressure by the pressurized supercritical fluid supplied to the housing 110 during the ashing process. Therefore, during the process, the exhaust member 120 allows the pressure inside the housing 110 to maintain a predetermined pressure. For example, when the predetermined pressure of the housing 110 is 290 bar, when the pressure inside the housing 110 exceeds 290 bar in the process, the exhaust member 120 opens the flow control valve 124 to open the discharge line 122. By discharging the supercritical fluid in the housing 110 through, the pressure inside the housing 110 is reduced. Then, when the pressure in the housing 110 again falls below 290 bar, the flow control valve 124 is closed.

In addition, during the ashing process, the flow rate adjusting member 124 of the exhaust member 120 may adjust the flow rate of the supercritical fluid moving inside the housing 110 during the process. For example, the flow control member 124 controls the discharge of the supercritical fluid discharged through the discharge line 122 during the process, so that the supercritical fluid moving inside the housing 110 is discharged through the discharge passage 112c. Thus, during the ashing process, the supercritical fluid in the housing 110 may be removed at a constant speed from the supply passage 114a to the discharge passage 112c to remove the photosensitive liquid on the surface of the wafer W.

When the photosensitive liquid is removed from the surface of the wafer W, unloading of the wafer W is performed (S500). That is, referring to FIGS. 5E and 5F, the supply of the supercritical fluid is stopped, and the driver 154 of the fixing member 150 moves the fixing block 152 from the fixing position p1 to the standby position p2. Let's do it. Then, the elevator 142 of the driving member 140 lowers the up / down plate 144 to move the supporting member 130 from the process position a to the standby position b. When the support member 130 is positioned at the standby position b, the robot arm (not shown) unloads the wafer W from the support member 130 and then transports the equipment to a facility where a subsequent process is performed.

Subsequently, the supercritical fluid supply method of the supercritical fluid supply device 10 according to the present invention will be described in detail. When the wafer W is loaded in the process chamber 100, one of the mixing members 16 that is ready to supply the supercritical fluid among the mixing members 16 supplies the supercritical fluid to the process chamber 100 ( S300).

As an example, referring to FIG. 6A, the supercritical fluid supply device 10 opens the valve V3 to supply the supercritical fluid in the first mixing member 16A to the process chamber 100. At this time, the second mixing member 16B is in a standby state of supply after generating a supercritical fluid satisfying a predetermined concentration and temperature. The third mixing member 16B receives the processing gas and the processing liquid from each of the processing gas supply member 12 and the processing liquid supply member 14 to generate the supercritical fluid. That is, the valve V7 is opened and the first pressurizing member 12c is operated so that the processing gas supply line 12b is processed from the processing gas supply source 12a to the production container 16a of the third mixing member 16c. Supply gas. In addition, the valve V8 is opened to operate the second pressurizing member 14c so that the processing liquid supply line 14b moves from the processing liquid supply source 14a to the production container 16a of the third mixing member 16c. To supply.

The production vessel 16a of the third mixing member 16c mixes and heats the supplied processing gas and processing liquid. That is, the processing liquid supplied to the production vessel 16a is propelled by the processing gas and injected into the production vessel 16a, and the processing liquid supplied to the production vessel 16a is heated by the heater 16b and is in a supercritical state. Is converted to. Therefore, the third mixing member 16c waits after generating the supercritical fluid that satisfies the predetermined concentration and temperature.

When the photoresist is removed from the surface of the wafer W, a new wafer W is loaded into the process chamber 100 after the wafer W is unloaded from the process chamber 100. 6B, the process chamber 100 receives the supercritical fluid from the second mixing member 16B of the supercritical fluid supply device 10 to remove the photoresist on the surface of the new wafer W. Referring to FIG. That is, the second mixing member 16B in which the valve V6 is open and ready to supply the supercritical fluid supplies the supercritical fluid to the process chamber 100. At this time, while the second mixing member 16B supplies the supercritical fluid, the first mixing member 16A generates a supercritical fluid that satisfies the predetermined concentration and temperature.

Thereafter, when the photoresist removing process of the process chamber 100 is completed, the wafer W is taken out of the process chamber 100 and another new wafer W is loaded again. When another new wafer W is loaded in the process chamber 100, the supercritical fluid supply device 100 opens the valve V9, as shown in FIG. 6C, to prepare for the existing supercritical fluid supply. The third mixing member (16C) in the supply to the supercritical fluid to the process chamber (100). At this time, while the third mixing member 16C supplies the supercritical fluid, the second mixing member 16B generates the supercritical fluid that satisfies the predetermined concentration and temperature.

As described above, in the present invention, the supercritical fluid supply device 100 includes a plurality of mixing members 16, and each of the mixing members 16 alternately supplies the supercritical fluid to the process chamber 100. Proceed with the process. Accordingly, the process is prevented from being stopped while the supercritical fluid supply device 10 generates the supercritical fluid, thereby improving the substrate throughput of the device.

In addition, the present invention by supplying a pressurized supercritical fluid directly into the housing 110, the pressure inside the housing 110 can be quickly reached to a predetermined pressure to adjust the time according to the pressure control inside the housing 110 By reducing the substrate processing process time.

The foregoing detailed description illustrates the present invention. In addition, the foregoing description merely shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications may be made within the scope of the concept of the invention disclosed in this specification, the scope equivalent to the disclosed contents, and / or the skill or knowledge in the art. The above-described embodiments are for explaining the best state in carrying out the present invention, the use of other inventions such as the present invention in other state known in the art, and the specific fields of application and uses of the present invention. Various changes are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to include other embodiments.

1 is a view showing a substrate processing apparatus according to the present invention.

2 is a view showing the process chamber shown in FIG.

3 is a view showing a process chamber according to another embodiment of the present invention.

4 is a flowchart illustrating a process of a substrate processing apparatus according to the present invention.

5A to 5F are views for explaining a process of the substrate processing apparatus according to the present invention.

6A to 6C are views for explaining a supercritical fluid supply process of the supercritical fluid supply device according to the present invention.

* Description of symbols on the main parts of the drawings *

1: substrate processing apparatus

10: supercritical fluid generating room

20: process room

100: process chamber

110: housing

120: exhaust member

130: support member

140: drive member

150: fixing member

Claims (7)

In a facility for processing a substrate, A process chamber performing a substrate processing process, A supercritical fluid supply device for generating a supercritical fluid and supplying the supercritical fluid generated to the process chamber; The supercritical fluid supply device, A processing gas supply member for supplying a processing gas; A processing liquid supply member for supplying a processing liquid; And a plurality of mixing members receiving the processing gas and the processing liquid from each of the processing gas supply member and the processing liquid supply member. The method of claim 1, Each of the mixing member, A generating container which provides a space for generating a supercritical fluid therein; A heater for heating the housing, and And a stirrer for mixing the processing gas and the processing liquid in the housing. The method of claim 2, The treatment liquid supply member, A processing liquid supply source for storing the processing liquid, A processing liquid supply line for supplying the processing liquid from the processing liquid supply source to the production vessel, and And a second pressing member installed in the processing liquid supply line to pressurize the processing liquid moving along the processing liquid supply line. The method according to any one of claims 1 to 3, The process chamber, A housing which provides a space for carrying out the process of processing the substrate therein, and which has a substrate entrance on the sidewall and which is open at the bottom thereof; A support member for supporting a substrate and inserted into an open lower portion of the housing, and Including a drive member for driving the support member up and down, The drive member, A substrate positioned between a process position where the upper surface of the support member is positioned at a position higher than the height of the substrate entrance and a standby position where the upper surface of the support member is positioned at a position lower than the height of the substrate entrance and exit; Processing equipment. The method of claim 4, wherein The process chamber, When the support member is located in the process position, further comprising a fixing member for physically fixing the support member to the housing, The fixing member, A fixed block inserted into a groove formed on the inner side of the housing during the process; And a driver for linearly reciprocating the fixed block. The process liquid for removing the photosensitive liquid is propelled by the processing gas and then supplied to a plurality of production vessels, and the production vessels are heated to a predetermined temperature to generate a supercritical fluid. To the chamber, Supercritical fluid supply of the production vessel, Substrate processing method characterized in that alternately made. The method of claim 6, Supercritical fluid supply of the production vessel, And when one of the production vessels supplies a supercritical fluid to the process chamber, the other production vessel of the production vessels generates the supercritical fluid.

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