KR101528709B1 - depositon crucible for improving evaporation uniformity - Google Patents

depositon crucible for improving evaporation uniformity Download PDF

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Publication number
KR101528709B1
KR101528709B1 KR1020140132000A KR20140132000A KR101528709B1 KR 101528709 B1 KR101528709 B1 KR 101528709B1 KR 1020140132000 A KR1020140132000 A KR 1020140132000A KR 20140132000 A KR20140132000 A KR 20140132000A KR 101528709 B1 KR101528709 B1 KR 101528709B1
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KR
South Korea
Prior art keywords
nozzle
unit
accommodating
heat transfer
deposition
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KR1020140132000A
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Korean (ko)
Inventor
문정일
이명선
안재형
윤성원
박희재
Original Assignee
에스엔유 프리시젼 주식회사
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Priority to KR1020140132000A priority Critical patent/KR101528709B1/en
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Publication of KR101528709B1 publication Critical patent/KR101528709B1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/06—Metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying

Abstract

The present invention relates to an evaporation container for improving evaporation uniformity capable of increasing evaporation uniformity by preventing clogging and temperature deviation in the length direction of an organic crucible. According to the present invention, the evaporation container for improving evaporation uniformity comprises: a nozzle unit having a plurality of nozzles provided in a length direction; an accommodation unit accommodating an organic matter therein and arranged to be apart from the nozzle unit to form a heating space in which an organic matter is evaporated or sublimated between the nozzle unit and the accommodation unit; and a connection unit interposed between the nozzle unit and the accommodation unit to deteriorate the heat transfer between the nozzle unit and the accommodation unit, connecting the nozzle unit and the accommodation unit, and finishing the heating space from the outside.

Description

[0001] DEPOSITON CRUCIBLE FOR IMPROVING EVAPORATION UNIFORMITY [0002]

The present invention relates to a vapor deposition vessel for improving the uniformity of vapor deposition, and more particularly, to a vapor deposition vessel which minimizes the temperature difference in the longitudinal direction in the vapor deposition vessel, thereby uniformizing the amount of organic matter vaporized along the longitudinal direction, To a deposition vessel which improves the deposition uniformity which prevents the occurrence of a clogging phenomenon on the nozzle side by increasing the temperature difference of the deposition chamber.

Recently, a variety of thin film patterns are formed for the fabrication of semiconductor or flat panel displays. Such thin film patterns can be implemented by a deposition process or a photolothography process.

Here, unless there are special circumstances, the deposition process is mainly used in consideration of the manufacturing cost. The thin film deposition process can be roughly divided into physical vapor deposition (PVD) and chemical vapor deposition (CVD) . Among them, physical vapor deposition is a method of depositing a deposition material on a substrate surface by physically changing a state of a gas state to a solid state by moving a deposition material to be deposited to a substrate surface in a gaseous state, Various thin films can be formed, and it is widely used because it can be mass-produced by a relatively simple process.

Here, a deposition vessel such as an organic material crucible is mainly used as a device for changing the deposition material to a gaseous state, and the deposition material is vaporized or sublimated by filling the deposition material such as organic material therein and heating it.

For example, when the temperature at which the vaporization or sublimation starts is 300 ° C and A is used, when the temperature of the organic material crucible reaches 300 ° C, A is spouted through the nozzle at the top of the organic material crucible in a vaporized state, As the temperature increases, the amount of A ejected increases more and more.

In this process, the vaporized organic material is sprayed onto the substrate side through the nozzle on the top of the organic crucible and deposited on the substrate. Here, in the organic material crucible, the gaseous organic material is liquefied again by absorbing the energy to the surroundings. In particular, this phenomenon often occurs in the nozzle connecting the inside and the outside of the organic material crucible. That is, when the organic material is liquefied or sublimated in the nozzle, the inner diameter of the nozzle is reduced to reduce the amount of organic matter injected toward the substrate side, which is called "clogging phenomenon ".

The amount of organic matter sprayed from some nozzles causing such clogging phenomenon is significantly smaller than the amount of organic matter sprayed from other nozzles where no clogging phenomenon occurs, thereby causing a problem of inducing the formation of an uneven thin film layer.

On the other hand, in addition to the above-mentioned clogging phenomenon, a temperature change in the longitudinal direction of the organic crucible at the upper portion or the lower portion of the organic material crucible also causes a problem of inducing the formation of a nonuniform thin film layer.

That is, as described above, the organic material crucible is vaporized according to the temperature to change the amount of the organic material deposited on the substrate side. For example, when the temperature of the material A is 300 °, an ejection amount of 0.1 g / , A discharge amount of 1 g / min is generated and a discharge amount of 2 g / min is generated when the temperature is 320 °, the temperature on the left side is 300 °, the temperature on the center side is 310 °, Assuming that the temperature is maintained at 320 °, the thickness of the thin film layer on the substrate becomes thicker from the left to the right as there is a significant difference in the amount of ejection from the left to the right.

 Such a clogging phenomenon and a temperature deviation in the organic material crucible may be a main cause of the formation of a nonuniform thin film layer, and studies are under way to solve this problem.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a deposition container for improving deposition uniformity which can improve deposition uniformity by preventing clogging phenomenon and temperature deviation in the longitudinal direction of an organic material crucible. .

According to an aspect of the present invention, there is provided a deposition vessel for vaporizing or sublimating an organic material contained therein and injecting the organic material into a substrate side, comprising: a nozzle unit having a plurality of nozzles along a longitudinal direction; An accommodating portion accommodating an organic material therein and being spaced apart from the nozzle portion so as to form a heating space in which organic substances are vaporized or sublimated between the nozzle portion and the accommodating portion; And a connection part interposed between the nozzle part and the accommodating part to connect the nozzle part and the accommodating part so as to lower the heat transfer between the nozzle part and the accommodating part and to finish the heating space from outside, Is achieved by an improved deposition vessel.

Here, it is preferable that the heat transfer coefficient of the nozzle portion and the accommodation portion is larger than the heat transfer coefficient of the connection portion.

Also, the heat transfer coefficient of the nozzle portion and the receiving portion is set to 50 W / m ° K to 410 W / m ° K, and the heat transfer coefficient of the connection portion is set to 14 W / m ° K to 25 W / m ° K .

The nozzle portion and the receiving portion may be formed of tantalum, copper, aluminum, or tungsten, and the connecting portion may be formed of titanium, stainless steel, or inconel.

The apparatus may further include a heating unit for heating the organic material contained in the receiving unit.

It is preferable that the heating unit is provided with a plurality of heating units for heating the nozzle unit and the accommodation unit so that the temperature of the nozzle unit is higher than the temperature of the accommodation unit.

In addition, it is preferable that the heating unit heats the nozzle unit at a vaporization temperature or sublimation temperature of the organic substance contained in the accommodation unit.

And a reinforcing member mounted on at least one of the nozzle unit and the accommodation unit to correct a heat transfer coefficient of at least one of the nozzle unit and the accommodation unit, .

It is preferable that a plurality of the reinforcing members are arranged parallel to each other along the width direction of the nozzle portion or the accommodating portion.

The nozzle portion, the connection portion, and the receiving portion may be formed of titanium, stainless steel, or inconel, and the reinforcing member may be formed of tantalum, copper, aluminum, or tungsten.

Preferably, the wall thickness of the connecting portion is smaller than the wall thickness of the nozzle portion or the wall portion of the receiving portion.

It is preferable that at least one end of the connection portion has a reduced thickness along a direction approaching the accommodation portion or the nozzle portion so that the contact area between the accommodation portion and the nozzle portion is reduced.

Preferably, at least one of the end portion of the receiving portion and the end portion of the nozzle portion has a reduced thickness along a direction approaching the connecting portion so that the contact area with the connecting portion decreases.

According to the present invention, there is provided a vapor deposition container that prevents clogging phenomenon and prevents the formation of a temperature variation in the longitudinal direction of the vapor deposition container, thereby improving the vapor deposition uniformity.

Further, by controlling the width of the connecting portion, the heat transfer between the receiving portion and the nozzle portion can be further reduced.

In addition, it is possible to further reduce the heat transfer between the receiving portion and the nozzle portion by adjusting the contact area between the connecting portion and the receiving portion or between the connecting portion and the nozzle portion.

Further, by heating the nozzle unit and the accommodation unit, the nozzle unit and the accommodation unit can maintain different temperatures.

Further, the heat transfer coefficient of the nozzle portion or the accommodation portion can be further increased by attaching the reinforcing member to the nozzle portion or the accommodation portion, and the temperature deviation in the nozzle portion or the accommodation portion can be reduced by selecting an appropriate reinforcing member.

1 is a view schematically showing a deposition apparatus in which a deposition vessel is used,
2 is a perspective view schematically showing a deposition container for improving deposition uniformity according to the first embodiment of the present invention,
FIG. 3 is a cross-sectional view schematically showing a deposition container for improving deposition uniformity according to FIG. 1,
FIGS. 4 and 5 are cross-sectional views schematically showing a modification of the deposition container for improving the deposition uniformity according to FIG. 1,
6 is a perspective view schematically showing a deposition container for improving deposition uniformity according to a second embodiment of the present invention,
7 is a cross-sectional view schematically showing a deposition container for improving deposition uniformity according to FIG.

Prior to the description, components having the same configuration are denoted by the same reference numerals as those in the first embodiment. In other embodiments, configurations different from those of the first embodiment will be described do.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a deposition container for improving deposition uniformity according to a first embodiment of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 2 is a perspective view schematically showing a deposition container for improving deposition uniformity according to the first embodiment of the present invention, and FIG. 3 is a cross-sectional view of the vapor deposition apparatus shown in FIG. 1 FIG. 2 is a cross-sectional view schematically showing a deposition container for improving the deposition uniformity according to FIG.

Referring to FIGS. 1 to 3, the deposition vessel 100 for improving deposition uniformity according to the first embodiment of the present invention promotes heat transfer in the longitudinal direction of the deposition vessel, while the heat transfer in the height direction of the deposition vessel is reduced And includes a nozzle unit 110, a receiving unit 120, a connection unit 130, and a heating unit 140, which can substantially uniformly emit gaseous organic substances from the respective nozzles.

The nozzle unit 110 is disposed on the upper part of the deposition container 100 according to the first embodiment of the present invention and includes a plurality of nozzles 111 along the longitudinal direction.

That is, since the deposition vessel 100 according to the first embodiment of the present invention is disposed below the substrate S and performs vapor deposition of the substrate S by spraying upwardly the gasified organic substances therein, 110 are positioned on the upper part of the deposition vessel 100, and each of the nozzles 111 injects gaseous organic matter toward the upper side.

In the first embodiment of the present invention, the nozzle unit 110 is formed as a quadrangular column as a whole, and the lower surface thereof is recessed inward and opened, and each nozzle 111 communicates with an area depressed inwards from the lower surface.

The storage part 120 is disposed under the deposition container 100 according to the first embodiment of the present invention and accommodates the organic material O therein. In addition, the organic material O accommodated therein is spaced apart from the nozzle unit 110 by a predetermined distance to form a heating space H in which the organic material O is vaporized or sublimated and changes to a gaseous state.

In the first embodiment of the present invention, the accommodating portion 120 is provided in a rectangular column shape having a sectional area corresponding to that of the nozzle portion 110, and the upper surface thereof is recessed inward to open. Here, the organic material (O) is contained in the region recessed inward from the upper surface.

The connection part 130 is interposed between the nozzle part 110 and the accommodation part 120 to connect the nozzle part 110 and the accommodation part 120 and finish the heating space H with the outside.

In the first embodiment of the present invention, the connection part 130 has a height corresponding to a distance between the nozzle part 110 and the accommodation part 120, and has a cross-sectional area corresponding to the nozzle part 110, And is provided in an open square pillar shape.

Hereinafter, the coupling relationship between the nozzle unit 110, the receiving unit 120, and the connecting unit 130 will be described in detail.

According to the first embodiment of the present invention, the heat transfer in the longitudinal direction is promoted and the heat transfer in the height direction is lowered. In order to realize this, in the nozzle unit 110 and the accommodating unit 120 Is greater than the heat transfer coefficient of the connection part (130). Here, the heat transfer coefficient means thermal conductivity.

Here, promoting the heat transfer in the longitudinal direction is to keep the amount of organic matter O vaporized or sublimated along the longitudinal direction substantially uniform. As described above, since the amount of the organic material O to be vaporized or sublimated is sensitive to temperature, if the temperature varies along the longitudinal direction, the thickness of the thin film deposited on the substrate S also fluctuates, thereby promoting heat transfer in the longitudinal direction It is important to keep the temperature in the longitudinal direction substantially uniform.

The lowering of heat transfer in the height direction is to generate a large temperature difference between the nozzle unit 110 and the accommodating unit 120. The temperature of the receiving portion 120 is heated to about the vaporization temperature or the sublimation temperature of the organic material O so as to adjust the amount injected from the nozzle portion 110 as described above. If the heat transfer in the height direction is sufficiently performed, the temperature difference between the nozzle unit 110 and the accommodating unit 120 does not greatly increase, and the heat exchange between the nozzle unit 110 and the accommodating unit 120 is substantially prevented. The temperature of the organic material 110 may be cooled below the vaporization temperature or the sublimation temperature of the organic material O to cause a clogging phenomenon. For this, in the first embodiment of the present invention, the heat transfer in the height direction is lowered so that a sufficient temperature difference is generated between the accommodating portion 120 and the nozzle portion 110.

The heat transfer coefficient in the nozzle unit 110 and the accommodating unit 120 is set to 50 W / m ° K to 410 W / m ° K, and in the first embodiment of the present invention, The heat transfer coefficient may be provided in the range of 14 W / m ° K to 25 W / m ° K, but is not limited to these values.

Here, the nozzle unit 110 and the receiving unit 120 may be formed of tantalum, copper, aluminum, or tungsten, and the connecting unit 130 may be formed of titanium, stainless steel, or inconel, but the present invention is not limited thereto .

Hereinafter, a vapor deposition container provided with a material having a low heat transfer coefficient and having a low heat transfer capability, a vapor deposition container provided with a material having a low heat transfer coefficient and having a low heat transfer capability, and a vapor deposition container 100 according to the first embodiment of the present invention will be described.

left side center right Top 350 355 350 Central part 330 335 330 bottom 310 315 310

Table 1 is a table showing the temperature at each site in a low-heat-transferable deposition vessel provided with a low heat transfer coefficient. The temperature difference between the upper and lower parts is kept as large as 40 °, so that the risk of clogging is lowered. However, the uniformity of the amount of vaporized or sublimed organic matter (O) Falls.

left side center right Top 333 335 333 Central part 323 325 323 bottom 313 315 313

Table 2 is a table showing the temperature at each site in a deposition vessel having a high heat transfer coefficient and having a high heat transfer coefficient. The temperature deviation in the right and left direction is small in the lower part where the organic material is disposed and vaporized or sublimated, so that the uniformity of the vaporized or sublimed organic matter can be maintained well. However, the temperature difference between the upper part and the lower part is about 20 °, so that the risk of clogging is high.

left side center right The nozzle portion (upper portion) 353 355 353 Connection (center) 333 335 333 Receiving part (lower part) 313 315 313

Table 3 is a table showing the temperatures at respective portions of the deposition container 100 according to the first embodiment of the present invention. The temperature difference between the right and the left of the lower part where the organic matter is disposed and vaporized or sublimated is small and the uniformity of the vaporized or sublimed organic matter can be maintained well and the temperature difference between the upper part and the lower part is kept as large as about 40 ° to lower the risk of clogging.

FIGS. 4 and 5 are cross-sectional views schematically showing a modification of the vapor deposition container for improving the deposition uniformity according to FIG.

4, in the first embodiment of the present invention, the wall thickness of the connection portion 130 is made thinner than the wall thickness of the nozzle portion 110 and the wall thickness of the receiving portion 120, .

Even if the same material is provided, the heat transfer ability is lowered in a thin thickness direction, and the heat transfer ability is improved in a thick thickness direction. By adjusting the thickness of the connection part made of different materials and the thickness of the nozzle part, The heat transfer in the height direction can be further reduced.

5, in the first embodiment of the present invention, the contact area between the nozzle unit 110 and the connection unit 130 and the contact area between the reception unit 120 and the connection unit 130 It is possible to reduce at least one of the contact area.

That is, at least one of the upper end portion and the lower end portion of the connection portion 130 may be provided so as to have a reduced thickness along the direction approaching the nozzle portion 110 or the accommodating portion 120. The upper end of the connection part 130 may be provided in a form of gradually decreasing the thickness in the direction of approaching the nozzle part 110 so as to reduce the contact area when the nozzle part 110 is in contact with the connection part 130, The lower end of the receiving portion 120 may be formed to have a gradually decreasing thickness in the direction of approaching the receiving portion 120 and reduce the contact area when the receiving portion 120 is in contact with the lower portion.

Alternatively, at least one of the end of the nozzle part 110 and the end of the receiving part 120 may be formed to have a reduced thickness along the direction of the connection part 120.

The nozzle unit 110 and the connection unit 130 may be adjusted by adjusting at least one of the contact area between the nozzle unit 110 and the connection unit 130 and the contact area between the accommodation unit 120 and the connection unit 130, The heat transfer between the receiving portion 120 and the connecting portion 130 can be reduced.

The heating unit 140 heats the deposition container 100 according to the first embodiment of the present invention to change the state of the organic substance O accommodated in the accommodation unit 130 to a gaseous state.

According to the first embodiment of the present invention, a plurality of heating units 140 may be provided to heat the nozzle unit 110 and the receiving unit 120 at different temperatures, but the present invention is not limited thereto.

The heating unit 140 heats the nozzle unit 110 and the accommodating unit 120 such that the temperature of the nozzle unit 110 and the accommodating unit 120 is maintained at the vaporization temperature or sublimation temperature of the organic material O The nozzle unit 110 and the accommodating unit 120 are heated such that the temperature of the nozzle unit 110 is maintained at a temperature higher than the temperature of the accommodating unit 120. [

Next, a deposition container 200 for improving deposition uniformity according to a second embodiment of the present invention will be described.

FIG. 6 is a perspective view schematically showing a deposition container for improving deposition uniformity according to a second embodiment of the present invention, and FIG. 7 is a cross-sectional view schematically showing a deposition container for improving deposition uniformity according to FIG.

Referring to FIG. 6 or FIG. 7, the deposition vessel 200 for improving deposition uniformity according to the second embodiment of the present invention promotes heat transfer in the longitudinal direction of the deposition vessel, The nozzle unit 210, the accommodating unit 220, the connecting unit 230, the heating unit 140, and the reinforcing member 250 are included in the nozzle unit 210, do.

Since the nozzle unit 210, the receiving unit 220, and the connecting unit 230 are substantially the same as those described in the first embodiment, a detailed description thereof will be omitted.

However, there is a difference in the material aspects from the first embodiment, which will be described later.

Since the heating unit 140 is the same as that described in the first embodiment, detailed description is omitted here.

The reinforcing member 250 is mounted on one of the nozzle unit 210 and the accommodating unit 220 and is configured to correct the heat transfer coefficient of either the nozzle unit 210 or the accommodating unit 220, Thereby reinforcing the heat transfer ability of either the first part 210 or the second part 220. [

The reinforcing member 250 may be formed in the nozzle part 210 and the accommodating part 220 so as to improve the heat transfer ability of the nozzle part 210 and the accommodating part 220 in the longitudinal direction. And a plurality of nozzles 210 and a plurality of the accommodating portions 220 are arranged parallel to each other along the width direction. Of course, it is not limited to this arrangement, and it is natural that it can be arranged in other ways as required.

The reinforcing member 250 may be mounted on the outer surface of either the nozzle unit 210 or the receiving unit 220 but is not limited thereto and may be mounted in any one of the receiving unit 220 Can be inserted and mounted.

In the second embodiment of the present invention, the reinforcing member 250 is made of tantalum, copper, aluminum or tungsten, and the nozzle unit 210, the receiving unit 220 and the connecting unit 230 are made of titanium, stainless steel, .

The heat transfer coefficient in the nozzle part 210 and the accommodating part 220 is increased more than the connecting part 230 by the reinforcing member 250.

That is, the nozzle unit 210 and the accommodating unit 220 increase the heat transfer coefficient as a whole by the nozzle unit 210 and the reinforcing member 250 mounted on the accommodating unit 220.

Meanwhile, in the second embodiment of the present invention, the nozzle unit 210 and the receiving unit 220 are made of tantalum, copper, aluminum or tungsten, the connecting unit 230 is made of titanium, stainless steel or tantalum, The heat transfer member 250 may be formed of a material having a higher heat transfer coefficient than the material of the nozzle unit 210 and the receiving unit 220 among tantalum, copper, aluminum, or tungsten.

In addition, the materials of the nozzle unit 210, the accommodating unit 220, the connecting unit 230, and the reinforcing member 250 may be variously selected so that the overall heat transfer coefficient of the nozzle unit 210 and the accommodating unit 220 230).

Next, a deposition container (not shown) for improving deposition uniformity according to the third embodiment of the present invention will be described.

A deposition vessel (not shown) for improving deposition uniformity according to the third embodiment of the present invention reduces the heat transfer between the nozzle portion and the accommodating portion through shape modification of at least one of the nozzle portion, the accommodating portion, A nozzle portion, a receiving portion, a connecting portion, and a heating portion.

Here, since the shape in the third embodiment of the present invention is substantially similar to the shape described in the modification of the first embodiment, detailed description is omitted here.

However, in the modification of the first embodiment, at least one of the nozzle unit 110, the receiving unit 120, and the connecting unit 130 is used in a state where the nozzle unit 110, the receiving unit 120 and the connecting unit 130 are appropriately selected. The shape of at least one of the nozzle portion, the accommodating portion, and the connecting portion is changed without any particular limitation as to the material of the nozzle portion, the accommodating portion, and the connecting portion.

Here, the nozzle portion, the receiving portion, and the connecting portion may be formed of any one of titanium, stainless steel, and tantalum.

The scope of the present invention is not limited to the above-described embodiments, but may be embodied in various forms of embodiments within the scope of the appended claims. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the appended claims.

100: Deposition vessel 110 for improving deposition uniformity 110:
120: accommodating portion 130:
140:
200: Deposition vessel 210 for improving deposition uniformity 210:
220: receptacle 230: connection
250: reinforcing member

Claims (13)

1. An evaporation vessel for vaporizing or sublimating an organic material contained therein,
A nozzle unit having a plurality of nozzles along the longitudinal direction;
An accommodating portion accommodating an organic material therein and being spaced apart from the nozzle portion so as to form a heating space in which organic substances are vaporized or sublimated between the nozzle portion and the accommodating portion;
A connecting portion interposed between the nozzle portion and the accommodating portion to connect the nozzle portion and the accommodating portion so as to reduce heat transfer between the nozzle portion and the accommodating portion, and to close the heating space from the outside; And
Wherein at least one of the nozzle portion and the accommodating portion includes a reinforcing member mounted on at least one of the nozzle portion and the accommodating portion to correct a heat transfer coefficient of at least one of the nozzle portion and the accommodating portion, Lt; / RTI > The method according to claim 1,
Wherein a heat transfer coefficient of the nozzle portion and the accommodation portion is greater than a heat transfer coefficient of the connection portion. 3. The method of claim 2,
Wherein the heat transfer coefficient of the nozzle portion and the receiving portion is set at 50 W / m ° K to 410 W / m ° K, and the heat transfer coefficient of the connection portion is set at 14 W / m ° K to 25 W / m ° K A deposition vessel with improved uniformity. The method of claim 3,
Wherein the nozzle portion and the receiving portion are made of tantalum, copper, aluminum, or tungsten, and the connecting portion is made of titanium, stainless steel, or inconel, and the deposition uniformity is improved. The method according to claim 1,
And a heating unit heating the organic material accommodated in the accommodating unit. 6. The method of claim 5,
Wherein the heating unit is provided with a plurality of heating units each for heating the nozzle unit and the accommodating unit so that the temperature of the nozzle unit is higher than the temperature of the accommodating unit. 6. The method of claim 5,
Wherein the heating unit improves the deposition uniformity by heating the nozzle unit at a temperature higher than the vaporization temperature or the sublimation temperature of the organic substance contained in the accommodation unit. delete The method according to claim 1,
Wherein a plurality of the reinforcing members are disposed parallel to each other along the width direction of the nozzle portion or the accommodating portion. The method according to claim 1,
Wherein the nozzle portion, the connecting portion, and the receiving portion are formed of titanium, stainless steel, or inconel, and the reinforcing member is made of tantalum, copper, aluminum, or tungsten, and the deposition uniformity is improved. 11. The method according to any one of claims 1 to 7 and 9 to 10,
Wherein the thickness of the wall portion of the connection portion is smaller than the thickness of the wall portion of the nozzle portion or the wall portion of the receiving portion. 11. The method according to any one of claims 1 to 7 and 9 to 10,
Wherein at least one end portion of the connection portion has a uniform thickness uniformity which decreases along a direction approaching the accommodation portion or the nozzle portion so that a contact area with the accommodation portion or the nozzle portion is reduced. 11. The method according to any one of claims 1 to 7 and 9 to 10,
Wherein at least one of an end portion of the receiving portion and an end portion of the nozzle portion has a reduced thickness along a direction close to the connecting portion so that the contact area with the connecting portion is reduced.
KR1020140132000A 2014-09-30 2014-09-30 depositon crucible for improving evaporation uniformity KR101528709B1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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KR20120078055A (en) * 2010-12-31 2012-07-10 엘지디스플레이 주식회사 Crusible furnace for fabricating the oled
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KR20120078055A (en) * 2010-12-31 2012-07-10 엘지디스플레이 주식회사 Crusible furnace for fabricating the oled
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JP2014047365A (en) * 2012-08-29 2014-03-17 Canon Tokki Corp Evaporation source

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