JP7078462B2 - Thin-film deposition source for vacuum-film deposition equipment - Google Patents

Thin-film deposition source for vacuum-film deposition equipment Download PDF

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JP7078462B2
JP7078462B2 JP2018112499A JP2018112499A JP7078462B2 JP 7078462 B2 JP7078462 B2 JP 7078462B2 JP 2018112499 A JP2018112499 A JP 2018112499A JP 2018112499 A JP2018112499 A JP 2018112499A JP 7078462 B2 JP7078462 B2 JP 7078462B2
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funnel member
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JP2019214766A (en
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昭彦 高良
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Ulvac Inc
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本発明は、真空チャンバ内に配置されて被蒸着物に対して蒸着するための真空蒸着装置用の蒸着源に関し、より詳しくは、噴射ノズルからの蒸着粒子の飛散分布が調整できるようにしたものに関する。 INDUSTRIAL APPLICABILITY The present invention relates to a vapor deposition source for a vacuum vapor deposition apparatus that is arranged in a vacuum chamber and for vapor deposition on an object to be deposited, and more specifically, it is capable of adjusting the scattering distribution of vapor-film deposited particles from an injection nozzle. Regarding.

例えば有機EL素子の製造工程においては、真空雰囲気中で基板などの被蒸着物にアルミキノリノール錯体(Alq)や芳香族ジアミンなどの昇華性の材料(有機材料)を蒸着する工程があり、この蒸着工程には真空蒸着装置が広く利用されている。このような真空蒸着装置に用いられる蒸着源は例えば特許文献1で知られている。このものは、蒸着物質を収容する収容箱(ルツボ)と収容箱を加熱する加熱手段とを備える。また、被蒸着物に対向する収容箱の面には、収容箱の加熱により昇華または気化した蒸着粒子を噴射する噴射ノズルが固定配置されている。 For example, in the manufacturing process of an organic EL element, there is a step of depositing a sublimable material (organic material) such as an aluminum quinolinol complex (Alq 3 ) or an aromatic diamine on an object to be vapor-deposited such as a substrate in a vacuum atmosphere. Vacuum vapor deposition equipment is widely used in the vapor deposition process. A vapor deposition source used in such a vacuum vapor deposition apparatus is known, for example, in Patent Document 1. This includes a storage box (crucible) for accommodating the vapor-filmed material and a heating means for heating the storage box. Further, on the surface of the storage box facing the object to be vapor-deposited, an injection nozzle for injecting vaporized particles sublimated or vaporized by heating the storage box is fixedly arranged.

近年、有機EL素子の製造に利用される有機材料として、多種多様なものが開発されており、このような有機材料を真空雰囲気中で加熱して昇華させる場合、有機材料ごとに昇華温度が異なる場合が多い。そのため、蒸着に使用する有機材料の種類に応じて、収容箱に対する単位時間当たりの加熱手段からの加熱量(加熱温度)を調整する必要がある。一方、収容箱の加熱により昇華した蒸着粒子(有機材料)が噴射ノズルから噴射されるとき、所定の余弦則に従ってその噴射口からドーム状に拡がりながら被蒸着物に向けて飛散するが、同じ有機材料でもその加熱量(加熱温度)によっては、収容箱内で昇華する蒸着粒子の量が変わることで蒸着粒子の飛散分布も変わる。また、異なる有機材料の場合、加熱量を適宜制御して収容箱内で昇華する蒸着粒子の量を一致させても、有機材料の種類によっては蒸着粒子の飛散分布が変わる。 In recent years, a wide variety of organic materials used in the manufacture of organic EL devices have been developed, and when such organic materials are heated and sublimated in a vacuum atmosphere, the sublimation temperature differs for each organic material. In many cases. Therefore, it is necessary to adjust the heating amount (heating temperature) from the heating means per unit time for the storage box according to the type of the organic material used for the vapor deposition. On the other hand, when the thin-film deposition particles (organic material) sublimated by heating the storage box are ejected from the injection nozzle, they spread in a dome shape from the injection port according to a predetermined cosine rule and scatter toward the vapor-deposited material, but the same organic. Depending on the amount of heating (heating temperature) of the material, the amount of vaporized particles sublimated in the storage box changes, and the scattering distribution of the vaporized particles also changes. Further, in the case of different organic materials, even if the heating amount is appropriately controlled to match the amount of the vapor-deposited particles sublimated in the storage box, the scattering distribution of the vapor-deposited particles changes depending on the type of the organic material.

このように蒸着粒子の飛散分布が蒸着物質(有機材料)の種類やその加熱量によって変化すると、例えば、被蒸着物の表面に蒸着したときにその膜厚の均一性が損なわれ、または、被蒸着物以外の部分に付着する蒸着粒子の量が増加して蒸着物質が無駄になるといった不具合が生じる。この場合、上記従来例の蒸着源では、加熱量の調整による飛散分布の調整しかできず、多種多様の有機材料の蒸着に対応できないという問題がある。 When the scattering distribution of the vapor-filmed particles changes depending on the type of the vapor-filmed substance (organic material) and the amount of heating thereof, for example, when the film is vapor-deposited on the surface of the material to be deposited, the uniformity of the film thickness is impaired or the film is covered. There is a problem that the amount of thin-film vapor deposition particles adhering to parts other than the vapor-film deposition material increases and the thin-film deposition material is wasted. In this case, the vapor deposition source of the above-mentioned conventional example can only adjust the scattering distribution by adjusting the heating amount, and has a problem that it cannot cope with the vapor deposition of a wide variety of organic materials.

特開2015-209559号公報JP 2015-209559A

本発明は、以上の点に鑑み、蒸着に使用する蒸着物質の種類に応じて、加熱量の調整によって飛散分布を調整できる機能に加えて、更に蒸着粒子の飛散分布を調整できる機能を持つ真空蒸着装置用の蒸着源を提供することをその課題とするものである。 In view of the above points, the present invention has a vacuum having a function of adjusting the scattering distribution of the vapor-deposited particles in addition to the function of adjusting the scattering distribution by adjusting the heating amount according to the type of the vapor-filming substance used for the vapor deposition. It is an object of the present invention to provide a vapor deposition source for a vapor deposition apparatus.

上記課題を解決するために、真空チャンバ内に配置されて被蒸着物に対して蒸着するための本発明の真空蒸着装置用の蒸着源は、蒸着物質を収容する収容箱とこの蒸着物質を加熱する第1加熱手段とを備え、被蒸着物に対向する収容箱の面に、加熱により昇華または気化した蒸着粒子を噴射する噴射ノズルが設けられ、収容箱から被蒸着物に向かう方向を上として、噴射ノズルは、夫々が上方に向けて拡径する第1漏斗部材と第2漏斗部材を備え、第1漏斗部材の下端が収容箱に取り付けられると共に、第2漏斗部材が第1漏斗部材に対して上下方向で近接離間可能に設けられることを特徴とする。 In order to solve the above problems, the vapor deposition source for the vacuum vapor deposition apparatus of the present invention, which is arranged in a vacuum chamber and for vapor deposition on an object to be deposited, heats a storage box containing the vapor deposition material and the vapor deposition material. A first heating means is provided, and an injection nozzle for injecting thin-film vaporized particles sublimated or vaporized by heating is provided on the surface of the storage box facing the vapor-film-deposited material, with the direction from the storage box toward the vapor-film-deposited material facing up. The injection nozzle is provided with a first funnel member and a second funnel member, each of which expands in diameter upward, the lower end of the first funnel member is attached to the storage box, and the second funnel member becomes the first funnel member. On the other hand, it is characterized in that it is provided so as to be close to each other in the vertical direction.

本発明によれば、第1漏斗部材に第2漏斗部材を近接(上下方向で互いに重なり合う場合も含む)させた位置では、収容箱の加熱により昇華または気化した蒸着粒子が、主として、第1漏斗部材の通路を通り、これに連通する第2漏斗部材の通路を経て所定の余弦則に従ってドーム状に拡がりながら被蒸着物に向けて飛散する。他方で、第1漏斗部材から第2漏斗部材を離間させると、第1漏斗部材と第2漏斗部材との間に蒸着粒子の通過を許容する隙間が形成されることで、蒸着粒子が、第2漏斗部材の通路を経て被蒸着物に向けて飛散するものに加えて、上記隙間を経て所定の余弦則に従って被蒸着物に向けて飛散するようになる。このとき、上下方向で第1漏斗部材に対する第2漏斗部材の相対位置を変更して上記隙間の大きさを変えれば、蒸着粒子の飛散分布を変えることができる。このように本発明は、加熱手段の加熱量の調整による飛散分布の調整に加えて、第1漏斗部材に対する第2漏斗部材の相対位置に応じて飛散分布を更に調整することができ、結果として、多種多様の有機材料の蒸着に対応することが可能になる。 According to the present invention, at a position where the second funnel member is close to the first funnel member (including the case where the second funnel member overlaps each other in the vertical direction), the vaporized particles sublimated or vaporized by heating the storage box are mainly the first funnel. It scatters toward the object to be deposited while spreading in a dome shape according to a predetermined cosine rule through the passage of the member and the passage of the second funnel member communicating with the passage. On the other hand, when the second funnel member is separated from the first funnel member, a gap is formed between the first funnel member and the second funnel member to allow the vapor-deposited particles to pass through, so that the vapor-deposited particles become the first. 2 In addition to the funnel member that scatters toward the vapor-deposited material through the passage, the funnel member scatters toward the vapor-film-deposited material according to a predetermined cosine rule through the gap. At this time, if the relative position of the second funnel member with respect to the first funnel member is changed in the vertical direction to change the size of the gap, the scattering distribution of the vapor-deposited particles can be changed. As described above, in the present invention, in addition to adjusting the scattering distribution by adjusting the heating amount of the heating means, the scattering distribution can be further adjusted according to the relative position of the second funnel member with respect to the first funnel member, and as a result, the scattering distribution can be further adjusted. , It becomes possible to cope with the vapor deposition of a wide variety of organic materials.

本発明において、前記第1漏斗部材に周方向に間隔を置いて複数の支柱が立設され、各支柱を介して第2漏斗部材が取り付けられていれば、上下方向で第1漏斗部材に対する第2漏斗部材の相対位置を変更できる構成が実現できる。この場合、第2漏斗部材の移動は、手動または例えばアクチュエータを用いて自動で行うことができる。 In the present invention, if a plurality of columns are erected on the first funnel member at intervals in the circumferential direction and the second funnel member is attached via each column, the first funnel member is vertically connected to the first funnel member. 2 It is possible to realize a configuration in which the relative position of the funnel member can be changed. In this case, the movement of the second funnel member can be performed manually or automatically using, for example, an actuator.

ところで、上記の如く、噴射ノズルを構成し、被蒸着物に対して蒸着すると、第2漏斗部材にも多くの蒸着粒子が付着、堆積することになる。このような場合、被蒸着物以外に蒸着粒子が付着して蒸着物質が無駄になるばかりか、蒸着中に、第2漏斗部材の下面に付着、堆積したもので、被蒸着物に向かう蒸着粒子の飛散分布が変化する虞もある。本発明においては、前記第2漏斗部材を蒸着物質の昇華または気化温度以上に加熱する第2加熱手段を備えることが好ましい。これによれば、収容箱内で昇華または気化した蒸着粒子が飛散する際に、第2漏斗部材の表面に付着しても、直ちに再気化または再昇華して被蒸着物に向けて飛散させることができ、上記不具合の発生を防止することができる。なお、第1漏斗部材は、収容箱に取り付けられているため、収容箱を加熱したときに伝熱で加熱されるため、第2漏斗部材と比較して蒸着粒子が付着、堆積し難いが、第2加熱手段により第1漏斗部材も加熱するようにしてもよい。 By the way, as described above, when the injection nozzle is configured and vapor deposition is performed on the material to be vapor-deposited, a large number of vapor-deposited particles adhere to and deposit on the second funnel member. In such a case, not only the thin-film deposition particles adhere to the material to be vapor-deposited and the vapor-film-deposited material is wasted, but also the vapor-filmed particles that adhere to and deposit on the lower surface of the second funnel member during the vapor deposition and go toward the vapor-film-deposited material. There is a possibility that the scattering distribution of the film will change. In the present invention, it is preferable to provide a second heating means for heating the second funnel member to a temperature equal to or higher than the sublimation or vaporization temperature of the vapor-deposited substance. According to this, when the sublimated or vaporized vaporized particles are scattered in the storage box, even if they adhere to the surface of the second funnel member, they are immediately revaporized or resublimated and scattered toward the vaporized material. It is possible to prevent the above-mentioned problems from occurring. Since the first funnel member is attached to the storage box, it is heated by heat transfer when the storage box is heated, so that the vapor deposition particles are less likely to adhere and accumulate than the second funnel member. The first funnel member may also be heated by the second heating means.

本発明の実施形態の蒸着源を備える真空蒸着装置を模式的に示す部分断面図。FIG. 3 is a partial cross-sectional view schematically showing a vacuum vapor deposition apparatus including the vapor deposition source according to the embodiment of the present invention. (a)は、本実施形態の蒸着源を第1漏斗部材に対する第2漏斗部材の相対位置を変えて示す拡大断面図、(b)は、蒸着源の噴射ノズルの平面図。(A) is an enlarged cross-sectional view showing the vapor deposition source of the present embodiment by changing the relative position of the second funnel member with respect to the first funnel member, and (b) is a plan view of the injection nozzle of the vapor deposition source. 本実施形態の蒸着源を、第1漏斗部材に対する第2漏斗部材の相対位置を更に変えて示す拡大断面図。The enlarged sectional view which shows the vapor deposition source of this embodiment by further changing the relative position of the 2nd funnel member with respect to the 1st funnel member.

以下、図面を参照して、被蒸着物を矩形の輪郭を持つ所定厚さのガラス基板(以下、「基板Sw」という)とし、基板Swの片面に蒸着する場合を例に本発明の真空蒸着装置用の蒸着源を説明する。以下においては、「上」、「下」といった方向を示す用語は、本実施形態の蒸着源の設置姿勢である図1を基準として説明する。 Hereinafter, referring to the drawings, a glass substrate having a predetermined thickness having a rectangular outline (hereinafter referred to as “substrate Sw”) is used as an object to be deposited, and the vacuum vapor deposition of the present invention is taken as an example of vapor deposition on one side of the substrate Sw. The vapor deposition source for the device will be described. In the following, terms indicating directions such as "up" and "down" will be described with reference to FIG. 1, which is the installation posture of the vapor deposition source of the present embodiment.

図1を参照して、Dmは、本実施形態の蒸着源DSを備える真空蒸着装置である。真空蒸着装置Dmは、真空チャンバ1を備え、真空チャンバ1には、特に図示して説明しないが、排気管を介して真空ポンプが接続され、所定圧力(真空度)に真空引きして保持できるようになっている。また、真空チャンバ1の上部には基板搬送装置2が設けられている。基板搬送装置2は、蒸着面としての下面を開放した状態で基板Swを保持するキャリア21を有し、図外の駆動装置によってキャリア21、ひいては基板Swを真空チャンバ1内の一方向に所定速度で移動するようになっている。基板搬送装置2としては公知のものが利用できるため、これ以上の説明は省略する。そして、真空チャンバ1の底面には、基板Swに対向させて本実施形態の蒸着源DSが設けられている。 With reference to FIG. 1, Dm is a vacuum vapor deposition apparatus including the vapor deposition source DS of the present embodiment. The vacuum vapor deposition apparatus Dm includes a vacuum chamber 1, and a vacuum pump is connected to the vacuum chamber 1 via an exhaust pipe, although not particularly illustrated, and can be evacuated to a predetermined pressure (vacuum degree) and held. It has become like. Further, a substrate transfer device 2 is provided above the vacuum chamber 1. The substrate transfer device 2 has a carrier 21 that holds the substrate Sw in a state where the lower surface as a vapor deposition surface is open, and the carrier 21 and thus the substrate Sw are moved to a predetermined speed in one direction in the vacuum chamber 1 by a drive device (not shown). It is designed to move with. Since a known substrate transfer device 2 can be used, further description thereof will be omitted. The bottom surface of the vacuum chamber 1 is provided with the vapor deposition source DS of the present embodiment facing the substrate Sw.

蒸着源DSは、モリブデン、チタン、ステンレスやカーボンなどの熱伝導が良く、高融点の材料から形成された、固体の蒸着物質3を収容する収容箱41を有する。蒸着物質3としては、基板Swに成膜しようとする薄膜に応じて金属材料や有機材料が用いられ、有機材料としては、アルミキノリノール錯体(Alq)や芳香族ジアミンなどが挙げられ、粉末状にしたものが充填されるようになっている。そして、収容箱41の周囲に設けた第1加熱手段5によって蒸着物質3が昇華温度または気化温度まで加熱されるようになっている。第1加熱手段5としては、シースヒータやランプヒータ等の公知のものが利用できる。 The vapor deposition source DS has a storage box 41 for accommodating a solid vapor deposition substance 3 formed of a material having good thermal conductivity, such as molybdenum, titanium, stainless steel, and carbon, and having a high melting point. As the vapor-deposited substance 3, a metal material or an organic material is used depending on the thin film to be formed on the substrate Sw, and examples of the organic material include an aluminum quinolinol complex (Alq 3 ) and an aromatic diamine, which are in the form of powder. It is designed to be filled. Then, the vapor-deposited substance 3 is heated to the sublimation temperature or the vaporization temperature by the first heating means 5 provided around the storage box 41. As the first heating means 5, known ones such as a sheath heater and a lamp heater can be used.

収容箱41の上面(基板Swとの対向面)41aには、昇華または気化した蒸着粒子3aを噴射する噴射ノズル42が、基板Swに平行に設置される収容箱41の上面41aに直交する方向に起立した姿勢で立設されている。なお、本実施形態では、1本の噴射ノズル42を設けた場合を例に説明するが、基板Swの面積や輪郭、基板Swへの蒸着時の膜厚分布の均一性等を考慮して、複数本の噴射ノズル42を所定のパターンで収容箱41の上面41aに設けることもできる。 On the upper surface (opposite surface of the substrate Sw) 41a of the storage box 41, the injection nozzle 42 for injecting the sublimated or vaporized vaporized particles 3a is in a direction orthogonal to the upper surface 41a of the storage box 41 installed in parallel with the substrate Sw. It is erected in an upright position. In this embodiment, the case where one injection nozzle 42 is provided will be described as an example, but in consideration of the area and contour of the substrate Sw, the uniformity of the film thickness distribution at the time of vapor deposition on the substrate Sw, and the like. A plurality of injection nozzles 42 may be provided on the upper surface 41a of the storage box 41 in a predetermined pattern.

図2及び図3も参照して、噴射ノズル42は、第1漏斗部材42aと第2漏斗部材42bを備える。下側に位置する第1漏斗部材42aは、下端を収容箱41内に突出させた姿勢で上面41aに立設された第1の筒体421と、第1の筒体421の上端に連続して設けられる、上方に向けて拡径した逆截頭円錐状の第1の本体422とを有し、第1の筒体421が、収容箱41内で昇華または気化した蒸着粒子3aの第1通路423を構成するようになっている。収容箱41内に突出した第1の筒体421の下端は、下方に向けて拡径され、収容箱41内で昇華または気化した蒸着粒子3aを第1通路423へと効率よく導くことができるようにしている。 With reference to FIGS. 2 and 3, the injection nozzle 42 includes a first funnel member 42a and a second funnel member 42b. The first funnel member 42a located on the lower side is continuous with the first cylinder 421 standing on the upper surface 41a with the lower end protruding into the storage box 41 and the upper end of the first cylinder 421. It has a first main body 422 having an inverted conical shape whose diameter is expanded upward, and the first tubular body 421 is the first of the vaporized particles 3a sublimated or vaporized in the storage box 41. It constitutes a passage 423. The lower end of the first tubular body 421 protruding into the storage box 41 is expanded downward in diameter, and the vaporized particles 3a sublimated or vaporized in the storage box 41 can be efficiently guided to the first passage 423. I am doing it.

上側に位置する第2漏斗部材42bは、第1の筒体421の孔軸42cと同一の孔軸を持つように配置される第2の筒体424と、第2の筒体424の上端に連続して設けられる、上方に向けて拡径した逆截頭円錐状の第2の本体425とを有し、第2の筒体424が、第1通路423を経た蒸着粒子3aを基板Swに向けて飛散させる第2通路426を構成するようになっている。この場合、第2の筒体424の内径は、第1の筒体421より大きく設定され、孔軸42cに沿って第2漏斗部材42bを第1漏斗部材42aに近接させた位置では、第2の筒体424の下端が、第1の本体422の傾斜した上面に着座するようになっている(図1参照)。なお、第1及び第2の各筒体421,424の上下方向の長さや、第1及び第2の各本体422,425の孔軸42cに対する傾斜角α1,α2は、例えば基板Swに蒸着したときの膜厚分布を考慮して適宜設定される。 The second funnel member 42b located on the upper side is located at the upper ends of the second cylinder 424 and the second cylinder 424 arranged so as to have the same hole axis as the hole shaft 42c of the first cylinder 421. It has a second main body 425 having an inverted conical shape that is continuously provided and has an enlarged diameter upward, and the second tubular body 424 uses the vapor-deposited particles 3a that have passed through the first passage 423 on the substrate Sw. It constitutes a second passage 426 to be scattered toward. In this case, the inner diameter of the second cylinder 424 is set to be larger than that of the first cylinder 421, and the second funnel member 42b is placed close to the first funnel member 42a along the hole shaft 42c. The lower end of the tubular body 424 is seated on the inclined upper surface of the first main body 422 (see FIG. 1). The vertical lengths of the first and second cylinders 421 and 424 and the inclination angles α1 and α2 with respect to the hole shafts 42c of the first and second main bodies 422 and 425 were deposited on the substrate Sw, for example. It is set appropriately in consideration of the film thickness distribution at the time.

また、第1漏斗部材42aの第1の本体422上端には、水平方向にのびる第1のフランジ部422aが形成され、第1のフランジ部422aには、上下方向にのびる複数本(本実施形態では、周方向に120度間隔で3本)の支柱427が立設されている。第2漏斗部材42bの第2の本体425の上端にもまた、水平方向にのびる第2のフランジ部425aが形成され、第2のフランジ部425aには、支柱427の挿通を可能とする透孔428が形成され、第2漏斗部材42bが支柱427で案内されて第1漏斗部材42aに対して上下方向(近接離間方向)に移動自在としている。これにより、図1に示す姿勢から、図2(a)に示す第1漏斗部材42aから第2漏斗部材42bが離間した位置では、第1漏斗部材42aの第1の本体422と、第2漏斗部材42bの第2の筒体424及び第2の本体425との間に隙間429が形成される。そして、図3に示すように、第1漏斗部材42aから第2漏斗部材42bを更に離間させた位置では、隙間429の大きさが変化する。本実施形態では、第1漏斗部材42aに対する第2漏斗部材42bの相対位置の変更は手動で行うことができ、特に図示していないが、第1漏斗部材42aに対する第2漏斗部材42bの相対位置を変更した後に、例えばストッパを用いてその位置で第2漏斗部材42bを支柱427に保持できるようにしている。 Further, a first flange portion 422a extending in the horizontal direction is formed at the upper end of the first main body 422 of the first funnel member 42a, and a plurality of flange portions 422a extending in the vertical direction are formed on the first flange portion 422a (the present embodiment). Then, three columns 427 are erected in the circumferential direction at intervals of 120 degrees. A second flange portion 425a extending in the horizontal direction is also formed at the upper end of the second main body 425 of the second funnel member 42b, and the second flange portion 425a has a through hole through which the support column 427 can be inserted. A 428 is formed, and the second funnel member 42b is guided by the support column 427 so as to be movable in the vertical direction (close and separated direction) with respect to the first funnel member 42a. As a result, at a position where the second funnel member 42b is separated from the first funnel member 42a shown in FIG. 2A from the posture shown in FIG. 1, the first main body 422 of the first funnel member 42a and the second funnel member 42b are separated from each other. A gap 429 is formed between the second tubular body 424 and the second main body 425 of the member 42b. Then, as shown in FIG. 3, the size of the gap 429 changes at a position where the second funnel member 42b is further separated from the first funnel member 42a. In the present embodiment, the relative position of the second funnel member 42b with respect to the first funnel member 42a can be changed manually, and although not shown in particular, the relative position of the second funnel member 42b with respect to the first funnel member 42a. After changing the above, for example, a stopper is used so that the second funnel member 42b can be held by the support column 427 at that position.

上記真空蒸着装置Dmを用いて基板Swに蒸着する場合、真空チャンバ1内に配置された収容箱41に固体の蒸着物質3を収容した後、真空チャンバ1内を所定圧力まで真空引きし、噴射ノズル42の対向する真空チャンバ1内の所定位置に基板搬送装置2によって基板Swを移送する。そして、真空雰囲気中で第1加熱手段5により収容箱41、ひいては蒸着物質3を加熱し、収容箱41内で蒸着物質3を昇華または気化させると、この昇華または気化した蒸着粒子3aが、所定の余弦則に従ってその噴射口からドーム状に拡がりながら基板Swに向けて飛散し、基板Swの下面に蒸着される。このとき、第2の筒体424の下端が第1の本体422の傾斜した上面に着座した近接位置(図1参照)では、蒸着粒子3aは、第1漏斗部材42aの第1の筒体421内の第1通路423を通り、これに連通する第2漏斗部材42bの第2の筒体424内の第2通路426を経て所定の余弦則に従ってドーム状に拡がりながら基板Swに向けて飛散する。 When vapor deposition is performed on the substrate Sw using the vacuum vapor deposition apparatus Dm, the solid vapor deposition substance 3 is housed in the storage box 41 arranged in the vacuum chamber 1, and then the inside of the vacuum chamber 1 is evacuated to a predetermined pressure for injection. The substrate Sw is transferred by the substrate transfer device 2 to a predetermined position in the vacuum chamber 1 facing the nozzle 42. Then, when the accommodation box 41 and eventually the vapor-deposited substance 3 are heated by the first heating means 5 in a vacuum atmosphere and the vapor-deposited substance 3 is sublimated or vaporized in the accommodation box 41, the sublimated or vaporized vapor-filmed particles 3a are predetermined. It scatters toward the substrate Sw while spreading in a dome shape from the injection port according to the cosine rule of the above, and is deposited on the lower surface of the substrate Sw. At this time, at a close position (see FIG. 1) where the lower end of the second cylinder 424 is seated on the inclined upper surface of the first main body 422, the vapor-deposited particles 3a are the first cylinder 421 of the first funnel member 42a. It passes through the first passage 423 in the inner passage 423, passes through the second passage 426 in the second tubular body 424 of the second funnel member 42b communicating with the first passage 423, and scatters toward the substrate Sw while spreading in a dome shape according to a predetermined cosine rule. ..

次に、図1に示す姿勢から、図2(a)に示す第1漏斗部材42aから第2漏斗部材42bが離間させた位置にすると、第1漏斗部材42aと第2漏斗部材42bとの間に蒸着粒子3aの通過を許容する隙間429が形成されることで、蒸着粒子3aは、第1の通路423から第2の通路426を経て飛散するものに加えて、第1の通路423から隙間429を経て所定の余弦則に従って基板Swに向けて飛散するようになる。このとき、図3に示すように第1漏斗部材42aに対する第2漏斗部材42bの相対位置を変更して隙間429の大きさを変えれば、蒸着粒子3aの飛散分布を更に変化させることができる。 Next, when the second funnel member 42b is separated from the first funnel member 42a shown in FIG. 2A from the posture shown in FIG. 1, the space between the first funnel member 42a and the second funnel member 42b is set. By forming a gap 429 that allows the vapor-filmed particles 3a to pass through, the vapor-filmed particles 3a are scattered from the first passage 423 through the second passage 426 and in addition to the gaps from the first passage 423. After passing through 429, the particles are scattered toward the substrate Sw according to a predetermined chord rule. At this time, if the relative position of the second funnel member 42b with respect to the first funnel member 42a is changed to change the size of the gap 429 as shown in FIG. 3, the scattering distribution of the vapor-deposited particles 3a can be further changed.

以上、説明したように本実施形態では、噴射ノズル42が第1漏斗部材42aとこの第1漏斗部材42aに上下方向に近接離間可能に設けられる第2漏斗部材42bとで構成されているため、第1加熱手段5の加熱量の調整による飛散分布の調整に加えて、第1漏斗部材42aに対する第2漏斗部材42bの相対位置に応じて飛散分布を更に調整することができ、結果として、多種多様の有機材料の蒸着に対応することが可能になる。また、各支柱427を介して第2漏斗部材42bを第1漏斗部材42aに取り付けているため、上下方向で第1漏斗部材42aに対する第2漏斗部材42bの相対位置の変更も簡単に行うことができる。なお、本実施形態では、手動で第2漏斗部材42bの位置を変えるものを例に説明したが、これに限定されるものではなく、特に図示して説明しないが、例えば公知の構造を有する空気式や電動式のアクチュエータを用いて真空雰囲気中にて自動で行うことができるように構成することもできる。 As described above, in the present embodiment, the injection nozzle 42 is composed of the first funnel member 42a and the second funnel member 42b provided on the first funnel member 42a so as to be close to each other in the vertical direction. In addition to adjusting the scattering distribution by adjusting the heating amount of the first heating means 5, the scattering distribution can be further adjusted according to the relative position of the second funnel member 42b with respect to the first funnel member 42a. It will be possible to handle the deposition of various organic materials. Further, since the second funnel member 42b is attached to the first funnel member 42a via each support column 427, the relative position of the second funnel member 42b with respect to the first funnel member 42a can be easily changed in the vertical direction. can. In this embodiment, an example is described in which the position of the second funnel member 42b is manually changed, but the present invention is not limited to this, and although not particularly illustrated, the air having a known structure is described. It can also be configured so that it can be performed automatically in a vacuum atmosphere using a formula or electric actuator.

ところで、第2漏斗部材42bを第1漏斗部材42aから上方に離間させて第1漏斗部材42aと第2漏斗部材42bとの間に蒸着粒子3aの通過を許容する隙間429が形成された状態で蒸着すると、第2漏斗部材42bにも多くの蒸着粒子3aが付着、堆積することになる。このような場合、基板Sw以外に蒸着粒子3aが付着して蒸着物質が無駄になるばかりか、蒸着中に、例えば第2漏斗部材42bの下面に付着、堆積したもので基板Swに向かう蒸着粒子3aの飛散分布が変化する虞もある。そこで、真空チャンバ1内には、特に、第2漏斗部材42bが離間位置にあるとき、第2漏斗部材42bを蒸着物質の昇華または気化温度以上に加熱する第2加熱手段6が設けられている。第2加熱手段6としては、シースヒータやランプヒータ等の公知のものが利用できる。 By the way, in a state where the second funnel member 42b is separated upward from the first funnel member 42a and a gap 429 is formed between the first funnel member 42a and the second funnel member 42b to allow the vapor-filmed particles 3a to pass through. When the vapor deposition is performed, a large amount of the vapor deposition particles 3a adhere to and deposit on the second funnel member 42b. In such a case, not only the vapor-filmed particles 3a adhere to the substrate Sw and the vapor-filmed material is wasted, but also the vapor-filmed particles that adhere to and deposit on the lower surface of the second funnel member 42b during the vapor deposition toward the substrate Sw. The scattering distribution of 3a may change. Therefore, in the vacuum chamber 1, a second heating means 6 for heating the second funnel member 42b to a temperature equal to or higher than the sublimation or vaporization temperature of the vapor-deposited substance is provided, particularly when the second funnel member 42b is in a separated position. .. As the second heating means 6, known means such as a sheath heater and a lamp heater can be used.

これにより、離間位置にある第2漏斗部材42bを第2加熱手段6により蒸着物質の昇華または気化温度以上に加熱することで、蒸着粒子3aが第2漏斗部材42bの表面に付着しても、直ちに再気化または再昇華して基板Swに向けて飛散させることができ、上記不具合の発生を防止することができる。なお、第1漏斗部材42aは、収容箱41に取り付けられているため、第1加熱手段5により収容箱41を加熱したときに伝熱で加熱されるため、第2漏斗部材42bと比較して蒸着粒子が付着、堆積し難いが、特に、第1の本体422が所定温度まで昇温しない場合も考えられる。このため、第2加熱手段6により第1漏斗部材42aも加熱するようにすることが好ましい。 As a result, even if the vapor-deposited particles 3a adhere to the surface of the second funnel member 42b by heating the second funnel member 42b at the separated position to a temperature equal to or higher than the sublimation or vaporization temperature of the vapor-deposited substance by the second heating means 6. It can be immediately re-vaporized or re-sublimated and scattered toward the substrate Sw, and the occurrence of the above-mentioned problems can be prevented. Since the first funnel member 42a is attached to the storage box 41, it is heated by heat transfer when the storage box 41 is heated by the first heating means 5, so that the first funnel member 42a is compared with the second funnel member 42b. It is difficult for the vapor-deposited particles to adhere and deposit, but in particular, it is conceivable that the temperature of the first main body 422 does not rise to a predetermined temperature. Therefore, it is preferable that the first funnel member 42a is also heated by the second heating means 6.

以上、本発明の実施形態について説明したが、本発明の技術思想の範囲を逸脱しない限り、種々の変形が可能である。上記実施形態では、第1漏斗部材42aと第2漏斗部材42bが第1及び第2の各筒体421,424を持つものを例に説明したが、これに限定されるものではなく、これらを省略して第1及び第2の各本体422,425が中央孔を有する形態としてもよい。なお、上記実施形態のように、第1漏斗部材42aが第1の筒体421を持つ場合、第1の本体422の下方で第1の筒体421を囲って且つ収容箱41の上面41aを覆うように遮蔽板(図示せず)を設けることができ、蒸着中に収容箱41からの輻射熱で基板Swやその下面に蒸着したものがダメージを受けるといった不具合を防止でき、有利である。 Although the embodiments of the present invention have been described above, various modifications are possible as long as they do not deviate from the scope of the technical idea of the present invention. In the above embodiment, the case where the first funnel member 42a and the second funnel member 42b have the first and second tubular bodies 421 and 424 has been described as an example, but the present invention is not limited thereto, and these may be described. By omitting it, each of the first and second main bodies 422 and 425 may have a central hole. When the first funnel member 42a has the first tubular body 421 as in the above embodiment, the first tubular body 421 is surrounded below the first main body 422 and the upper surface 41a of the storage box 41 is formed. A shielding plate (not shown) can be provided so as to cover the substrate, which is advantageous because it can prevent problems such as damage to the substrate Sw and the one deposited on the lower surface thereof due to radiant heat from the storage box 41 during vapor deposition.

また、上記実施形態では、第1及び第2の各本体422,425が孔軸42cに対して所定の角度で傾斜させたものを例に説明したが、これに限定されるものではなく、第1及び第2の各本体422,425の下面を湾曲させた湾曲面として形成してもよい。また、上記実施形態では、第2漏斗部材42bを所定の位置に保持する支柱427を第1漏斗部材42aに設けるものを例に説明したが、第1漏斗部材42aに対して第2漏斗部材42bを上下方向の所定の位置に保持できるものであれば、これに限定されるものではない。 Further, in the above embodiment, the case where the first and second main bodies 422 and 425 are tilted at a predetermined angle with respect to the hole shaft 42c has been described as an example, but the present invention is not limited to this. The lower surface of each of the first and second main bodies 422 and 425 may be formed as a curved curved surface. Further, in the above embodiment, the support 427 for holding the second funnel member 42b at a predetermined position is provided in the first funnel member 42a as an example, but the second funnel member 42b is described with respect to the first funnel member 42a. Is not limited to this as long as it can be held in a predetermined position in the vertical direction.

Dm…真空蒸着装置、DS…真空蒸着装置用の蒸着源、Sw…基板(被蒸着物)、1…真空チャンバ、3…蒸着物質、3a…蒸着粒子、41…収容箱、41a…被蒸着物Swに対向する収容箱41の面、42…噴射ノズル、42a…第1漏斗部材、42b…第2漏斗部材、427…支柱、5…第1加熱手段、6…第2加熱手段。 Dm ... Vacuum vapor deposition equipment, DS ... Deposition source for vacuum vapor deposition equipment, Sw ... Substrate (Evaporation to be deposited), 1 ... Vacuum chamber, 3 ... Evaporated material, 3a ... Evaporated particles, 41 ... Storage box, 41a ... Evaporated material The surface of the storage box 41 facing Sw, 42 ... injection nozzle, 42a ... first funnel member, 42b ... second funnel member, 427 ... support, 5 ... first heating means, 6 ... second heating means.

Claims (2)

真空チャンバ内に配置されて被蒸着物に対して蒸着するための真空蒸着装置用の蒸着源であって、
蒸着物質を収容する収容箱とこの蒸着物質を加熱する第1加熱手段とを備え、被蒸着物に対向する収容箱の面に、加熱により昇華または気化した蒸着粒子を噴射する噴射ノズルが設けられるものにおいて、
収容箱から被蒸着物に向かう方向を上として、噴射ノズルは、夫々が上方に向けて拡径する第1漏斗部材と第2漏斗部材を備え、第1漏斗部材の下端が収容箱に取り付けられると共に、第2漏斗部材が第1漏斗部材に対して上下方向で近接離間可能に設けられ
前記第1漏斗部材に周方向に間隔を置いて複数の支柱が立設され、各支柱を介して第2漏斗部材が取り付けられていることを特徴とする真空蒸着装置用の蒸着源。
A vapor deposition source for a vacuum vapor deposition apparatus that is placed in a vacuum chamber to deposit a film on an object to be deposited.
A storage box for accommodating the vapor-filmed material and a first heating means for heating the vapor-deposited material are provided, and an injection nozzle for injecting vaporized particles sublimated or vaporized by heating is provided on the surface of the storage box facing the material to be vapor-deposited. In things
The injection nozzles are provided with a first funnel member and a second funnel member, each of which expands in diameter upward, with the direction from the containment box toward the object to be deposited facing up, and the lower end of the first funnel member is attached to the containment box. At the same time, the second funnel member is provided so as to be close to and separated from the first funnel member in the vertical direction .
A vapor deposition source for a vacuum vapor deposition apparatus , wherein a plurality of columns are erected on the first funnel member at intervals in the circumferential direction, and the second funnel member is attached via each column .
前記第2漏斗部材を蒸着物質の昇華または気化温度以上に加熱する第2加熱手段を備えることを特徴とする請求項1記載の真空蒸着装置用の蒸着源。 The vapor deposition source for a vacuum vapor deposition apparatus according to claim 1 , further comprising a second heating means for heating the second funnel member to a temperature equal to or higher than the sublimation or vaporization temperature of the vapor deposition material.
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004307877A (en) 2003-04-02 2004-11-04 Nippon Biitec:Kk Molecular beam source for depositing thin film, and thin-film depositing method using it
JP2005048244A (en) 2003-07-30 2005-02-24 Nippon Biitec:Kk Molecular beam source for depositing organic thin film
JP2008106360A (en) 2006-10-23 2008-05-08 Yas Co Ltd Evaporator having multi-layered conical slit nozzle for vacuum thermal evaporation
JP2008538227A (en) 2005-02-22 2008-10-16 イー−サイエンス,インコーポレイテッド Outflow cell valve
JP2009280861A (en) 2008-05-22 2009-12-03 Hitachi Zosen Corp Structure of release part in vacuum deposition apparatus
JP2011079736A (en) 1995-05-03 2011-04-21 Veeco Compound Semiconductor Inc Unibody crucible

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0685388B2 (en) * 1986-02-17 1994-10-26 富士通株式会社 Molecular beam epitaxial growth system
US5616180A (en) * 1994-12-22 1997-04-01 Northrop Grumman Corporation Aparatus for varying the flux of a molecular beam
US6011904A (en) * 1997-06-10 2000-01-04 Board Of Regents, University Of Texas Molecular beam epitaxy effusion cell

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011079736A (en) 1995-05-03 2011-04-21 Veeco Compound Semiconductor Inc Unibody crucible
JP2004307877A (en) 2003-04-02 2004-11-04 Nippon Biitec:Kk Molecular beam source for depositing thin film, and thin-film depositing method using it
JP2005048244A (en) 2003-07-30 2005-02-24 Nippon Biitec:Kk Molecular beam source for depositing organic thin film
JP2008538227A (en) 2005-02-22 2008-10-16 イー−サイエンス,インコーポレイテッド Outflow cell valve
JP2008106360A (en) 2006-10-23 2008-05-08 Yas Co Ltd Evaporator having multi-layered conical slit nozzle for vacuum thermal evaporation
JP2009280861A (en) 2008-05-22 2009-12-03 Hitachi Zosen Corp Structure of release part in vacuum deposition apparatus

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