KR101521833B1 - 박막 트랜지스터 및 그 제작 방법, 및 표시 장치 및 그 제작 방법 - Google Patents

박막 트랜지스터 및 그 제작 방법, 및 표시 장치 및 그 제작 방법 Download PDF

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KR101521833B1
KR101521833B1 KR1020090020213A KR20090020213A KR101521833B1 KR 101521833 B1 KR101521833 B1 KR 101521833B1 KR 1020090020213 A KR1020090020213 A KR 1020090020213A KR 20090020213 A KR20090020213 A KR 20090020213A KR 101521833 B1 KR101521833 B1 KR 101521833B1
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film
resist mask
etching
forming
conductive film
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English (en)
Korean (ko)
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KR20090097131A (ko
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히데카즈 미야리
타카후미 미조구치
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020090020213A 2008-03-10 2009-03-10 박막 트랜지스터 및 그 제작 방법, 및 표시 장치 및 그 제작 방법 Expired - Fee Related KR101521833B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008058906 2008-03-10
JPJP-P-2008-058906 2008-03-10

Publications (2)

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KR20090097131A KR20090097131A (ko) 2009-09-15
KR101521833B1 true KR101521833B1 (ko) 2015-05-20

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Country Status (5)

Country Link
US (1) US7989275B2 (enExample)
JP (1) JP5371487B2 (enExample)
KR (1) KR101521833B1 (enExample)
CN (1) CN101533781B (enExample)
TW (1) TWI509700B (enExample)

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US8101442B2 (en) * 2008-03-05 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing EL display device
US8207026B2 (en) * 2009-01-28 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
US7989234B2 (en) * 2009-02-16 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
US8202769B2 (en) 2009-03-11 2012-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5539765B2 (ja) * 2009-03-26 2014-07-02 株式会社半導体エネルギー研究所 トランジスタの作製方法
CN101964309B (zh) * 2010-09-01 2012-08-01 友达光电股份有限公司 薄膜晶体管的制造方法
JP5667868B2 (ja) * 2010-12-24 2015-02-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN103035653A (zh) * 2012-10-10 2013-04-10 深圳市华星光电技术有限公司 薄膜晶体管像素结构及其制作方法
KR102148486B1 (ko) * 2013-12-31 2020-08-26 엘지디스플레이 주식회사 표시장치용 박막 트랜지스터 어레이 기판 및 그 제조방법
CA3010852C (en) 2016-01-07 2023-09-19 The Research Foundation For The State University Of New York Multi-well selenium device and method for fabrication thereof
KR102385502B1 (ko) * 2018-06-27 2022-04-11 미쓰비시덴키 가부시키가이샤 반도체 장치의 제조 방법
US11016383B2 (en) * 2018-08-31 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Pellicle for an EUV lithography mask and a method of manufacturing thereof
KR102795888B1 (ko) 2019-06-07 2025-04-17 삼성디스플레이 주식회사 표시 장치의 제조 방법

Citations (4)

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JPH0682831A (ja) * 1992-08-31 1994-03-25 Dainippon Printing Co Ltd アクティブマトリックス液晶表示装置およびその製造方法
US5510916A (en) * 1992-01-30 1996-04-23 Nec Corporation Active matrix liquid crystal device with opposite substrate having black matrix with larger aperture than active substrate
KR100669093B1 (ko) * 1999-11-05 2007-01-16 엘지.필립스 엘시디 주식회사 액정표시소자의 제조방법
KR20080001181A (ko) * 2006-06-29 2008-01-03 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이 기판과 그 제조방법

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JPH0519297A (ja) * 1991-07-15 1993-01-29 Nec Corp 液晶表示パネル，液晶表示装置及びそれらの製造方法
JPH07307477A (ja) 1994-03-15 1995-11-21 Sanyo Electric Co Ltd 半導体装置の製造方法
JP3270674B2 (ja) * 1995-01-17 2002-04-02 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
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US6493048B1 (en) * 1998-10-21 2002-12-10 Samsung Electronics Co., Ltd. Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same
JP2000307118A (ja) 1999-04-21 2000-11-02 Matsushita Electric Ind Co Ltd 薄膜トランジスタおよびその製造方法
KR100325079B1 (ko) * 1999-12-22 2002-03-02 주식회사 현대 디스플레이 테크놀로지 고개구율 및 고투과율 액정표시장치의 제조방법
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KR101225440B1 (ko) * 2005-06-30 2013-01-25 엘지디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
JP5105811B2 (ja) 2005-10-14 2012-12-26 株式会社半導体エネルギー研究所 表示装置
US8149346B2 (en) * 2005-10-14 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
EP1793266B1 (en) * 2005-12-05 2017-03-08 Semiconductor Energy Laboratory Co., Ltd. Transflective Liquid Crystal Display with a Horizontal Electric Field Configuration
EP2479605B1 (en) * 2005-12-05 2015-07-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
TWI322288B (en) * 2006-03-07 2010-03-21 Au Optronics Corp Manufacture method of pixel array substrate
CN100463193C (zh) * 2006-11-03 2009-02-18 北京京东方光电科技有限公司 一种tft阵列结构及其制造方法
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5510916A (en) * 1992-01-30 1996-04-23 Nec Corporation Active matrix liquid crystal device with opposite substrate having black matrix with larger aperture than active substrate
JPH0682831A (ja) * 1992-08-31 1994-03-25 Dainippon Printing Co Ltd アクティブマトリックス液晶表示装置およびその製造方法
KR100669093B1 (ko) * 1999-11-05 2007-01-16 엘지.필립스 엘시디 주식회사 액정표시소자의 제조방법
KR20080001181A (ko) * 2006-06-29 2008-01-03 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이 기판과 그 제조방법

Also Published As

Publication number Publication date
JP2009246348A (ja) 2009-10-22
US20090227051A1 (en) 2009-09-10
JP5371487B2 (ja) 2013-12-18
TW201001560A (en) 2010-01-01
CN101533781A (zh) 2009-09-16
KR20090097131A (ko) 2009-09-15
TWI509700B (zh) 2015-11-21
US7989275B2 (en) 2011-08-02
CN101533781B (zh) 2013-05-01

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