KR101510914B1 - 클러스터붕소를 제조하는 방법 - Google Patents

클러스터붕소를 제조하는 방법 Download PDF

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Publication number
KR101510914B1
KR101510914B1 KR20107010912A KR20107010912A KR101510914B1 KR 101510914 B1 KR101510914 B1 KR 101510914B1 KR 20107010912 A KR20107010912 A KR 20107010912A KR 20107010912 A KR20107010912 A KR 20107010912A KR 101510914 B1 KR101510914 B1 KR 101510914B1
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South Korea
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acetonitrile
acid
solvent
mixture
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Expired - Fee Related
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KR20107010912A
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English (en)
Korean (ko)
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KR20100092447A (ko
Inventor
케빈 에스 쿡
마크 옥스포드
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세미이큅, 인코포레이티드
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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00Boron; Compounds thereof
    • C01B35/02Boron; Borides
    • C01B35/026Higher boron hydrides, i.e. containing at least three boron atoms
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B6/00Hydrides of metals including fully or partially hydrided metals, alloys or intermetallic compounds ; Compounds containing at least one metal-hydrogen bond, e.g. (GeH3)2S, SiH GeH; Monoborane or diborane; Addition complexes thereof
    • C01B6/06Hydrides of aluminium, gallium, indium, thallium, germanium, tin, lead, arsenic, antimony, bismuth or polonium; Monoborane; Diborane; Addition complexes thereof
    • C01B6/10Monoborane; Diborane; Addition complexes thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T442/00Fabric [woven, knitted, or nonwoven textile or cloth, etc.]
    • Y10T442/30Woven fabric [i.e., woven strand or strip material]
    • Y10T442/3927Including a paper or wood pulp layer

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Catalysts (AREA)
KR20107010912A 2007-11-02 2008-11-03 클러스터붕소를 제조하는 방법 Expired - Fee Related KR101510914B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US168507P 2007-11-02 2007-11-02
US61/001,685 2007-11-02
PCT/US2008/012470 WO2009058406A1 (en) 2007-11-02 2008-11-03 Methods of preparing clusterboron

Publications (2)

Publication Number Publication Date
KR20100092447A KR20100092447A (ko) 2010-08-20
KR101510914B1 true KR101510914B1 (ko) 2015-04-10

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KR20107010912A Expired - Fee Related KR101510914B1 (ko) 2007-11-02 2008-11-03 클러스터붕소를 제조하는 방법

Country Status (6)

Country Link
US (1) US8673251B2 (enExample)
EP (1) EP2212251B1 (enExample)
JP (1) JP5710975B2 (enExample)
KR (1) KR101510914B1 (enExample)
CN (2) CN103922359A (enExample)
WO (1) WO2009058406A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103170447B (zh) 2005-08-30 2015-02-18 先进科技材料公司 使用替代的氟化含硼前驱体的硼离子注入和用于注入的大氢化硼的形成
EP2205524B1 (en) * 2007-11-02 2017-06-14 Semequip, Inc. Methods of preparing clusterboron
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
SG10201605310RA (en) 2009-10-27 2016-08-30 Entegris Inc Ion implantation system and method
TWI386983B (zh) * 2010-02-26 2013-02-21 Advanced Tech Materials 用以增進離子植入系統中之離子源的壽命及性能之方法與設備
US8779383B2 (en) 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
US9598352B2 (en) 2011-11-18 2017-03-21 The Curators Of The University Of Missouri Process and device for the production of polyhedral boranes
SG10201801299YA (en) 2013-08-16 2018-03-28 Entegris Inc Silicon implantation in substrates and provision of silicon precursor compositions therefor
US9972489B2 (en) * 2015-05-28 2018-05-15 SemiNuclear, Inc. Composition and method for making picocrystalline artificial borane atoms
US11651957B2 (en) 2015-05-28 2023-05-16 SemiNuclear, Inc. Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization
JP7070871B2 (ja) * 2016-11-29 2022-05-18 セミニュークリア,インコーポレイテッド ピコ結晶人工ボラン原子を製造するための組成物及び方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070004640A (ko) * 2004-01-22 2007-01-09 세미이큅, 인코포레이티드 동위원소 농축 보란 및 이들의 제조 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3577679B2 (ja) * 1995-03-24 2004-10-13 日本化学工業株式会社 メソポーラスアルミノシリケートの製造方法
US6086837A (en) * 1997-04-24 2000-07-11 Bechtel Bwxt Idaho, Llc Method of synthesizing enriched decaborane for use in generating boron neutron capture therapy pharmaceuticals
US6525224B1 (en) * 1999-06-08 2003-02-25 Northern Illinois University Fused polyhedron borane dianion
KR100827670B1 (ko) * 2002-06-26 2008-05-07 세미이큅, 인코포레이티드 이온 소스
WO2005074586A2 (en) * 2004-02-02 2005-08-18 Semequip Inc. Method of production of b10h102- ammonium salts and methods of production of b18h22

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070004640A (ko) * 2004-01-22 2007-01-09 세미이큅, 인코포레이티드 동위원소 농축 보란 및 이들의 제조 방법

Also Published As

Publication number Publication date
CN103922359A (zh) 2014-07-16
JP5710975B2 (ja) 2015-04-30
EP2212251A4 (en) 2011-11-02
EP2212251A1 (en) 2010-08-04
JP2011502923A (ja) 2011-01-27
US8673251B2 (en) 2014-03-18
EP2212251B1 (en) 2016-12-21
KR20100092447A (ko) 2010-08-20
CN101848863A (zh) 2010-09-29
US20110165053A1 (en) 2011-07-07
WO2009058406A1 (en) 2009-05-07

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