KR101494746B1 - 선택적으로 제조된 탄소 나노 튜브 가역 저항 전환 소자를 사용하는 메모리 셀과 이를 형성하는 방법 - Google Patents

선택적으로 제조된 탄소 나노 튜브 가역 저항 전환 소자를 사용하는 메모리 셀과 이를 형성하는 방법 Download PDF

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KR101494746B1
KR101494746B1 KR1020107013893A KR20107013893A KR101494746B1 KR 101494746 B1 KR101494746 B1 KR 101494746B1 KR 1020107013893 A KR1020107013893 A KR 1020107013893A KR 20107013893 A KR20107013893 A KR 20107013893A KR 101494746 B1 KR101494746 B1 KR 101494746B1
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fabricating
conductor
reversible resistance
resistance switching
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KR20100133948A (ko
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마크 클락
브래드 허너
에이프럴 슈릭커
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쌘디스크 3디 엘엘씨
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • H10N70/8845—Carbon or carbides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/35—Material including carbon, e.g. graphite, grapheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Semiconductor Memories (AREA)
  • Carbon And Carbon Compounds (AREA)
KR1020107013893A 2007-12-31 2008-12-30 선택적으로 제조된 탄소 나노 튜브 가역 저항 전환 소자를 사용하는 메모리 셀과 이를 형성하는 방법 Expired - Fee Related KR101494746B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/968,154 2007-12-31
US11/968,154 US8236623B2 (en) 2007-12-31 2007-12-31 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
PCT/US2008/088584 WO2009088888A2 (en) 2007-12-31 2008-12-30 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same

Publications (2)

Publication Number Publication Date
KR20100133948A KR20100133948A (ko) 2010-12-22
KR101494746B1 true KR101494746B1 (ko) 2015-03-02

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Country Status (7)

Country Link
US (1) US8236623B2 (enExample)
EP (1) EP2227824B1 (enExample)
JP (1) JP2011508458A (enExample)
KR (1) KR101494746B1 (enExample)
CN (1) CN101919047B (enExample)
TW (1) TW200943489A (enExample)
WO (1) WO2009088888A2 (enExample)

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9287356B2 (en) * 2005-05-09 2016-03-15 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9390790B2 (en) 2005-04-05 2016-07-12 Nantero Inc. Carbon based nonvolatile cross point memory incorporating carbon based diode select devices and MOSFET select devices for memory and logic applications
US8000127B2 (en) * 2009-08-12 2011-08-16 Nantero, Inc. Method for resetting a resistive change memory element
US9911743B2 (en) 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7479654B2 (en) 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US8513768B2 (en) * 2005-05-09 2013-08-20 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8183665B2 (en) * 2005-11-15 2012-05-22 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7835170B2 (en) * 2005-05-09 2010-11-16 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US7781862B2 (en) * 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
US8217490B2 (en) * 2005-05-09 2012-07-10 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7575693B2 (en) 2005-05-23 2009-08-18 Nantero, Inc. Method of aligning nanotubes and wires with an etched feature
US20090166610A1 (en) * 2007-12-31 2009-07-02 April Schricker Memory cell with planarized carbon nanotube layer and methods of forming the same
US8558220B2 (en) * 2007-12-31 2013-10-15 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US8878235B2 (en) * 2007-12-31 2014-11-04 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
WO2009126891A1 (en) * 2008-04-11 2009-10-15 Sandisk 3D, Llc Methods for etching carbon nano-tube films for use in non-volatile memories
US8304284B2 (en) * 2008-04-11 2012-11-06 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same
US8110476B2 (en) 2008-04-11 2012-02-07 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
TW201001629A (en) * 2008-04-11 2010-01-01 Sandisk 3D Llc Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same
US8530318B2 (en) * 2008-04-11 2013-09-10 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
WO2009126846A1 (en) * 2008-04-11 2009-10-15 Sandisk 3D, Llc Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom
US8133793B2 (en) * 2008-05-16 2012-03-13 Sandisk 3D Llc Carbon nano-film reversible resistance-switchable elements and methods of forming the same
US8569730B2 (en) * 2008-07-08 2013-10-29 Sandisk 3D Llc Carbon-based interface layer for a memory device and methods of forming the same
US8309407B2 (en) * 2008-07-15 2012-11-13 Sandisk 3D Llc Electronic devices including carbon-based films having sidewall liners, and methods of forming such devices
WO2010009364A1 (en) * 2008-07-18 2010-01-21 Sandisk 3D, Llc Carbon-based resistivity-switching materials and methods of forming the same
US20100032639A1 (en) * 2008-08-07 2010-02-11 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
WO2010019440A1 (en) * 2008-08-14 2010-02-18 Nantero, Inc. Nonvolatile nanotube programmable logic devices and nonvolatile nanoture field programmable gate arrays using same
US9263126B1 (en) 2010-09-01 2016-02-16 Nantero Inc. Method for dynamically accessing and programming resistive change element arrays
WO2010022097A1 (en) * 2008-08-19 2010-02-25 Sandisk 3D, Llc Methods for increasing carbon nano-tube (cnt) yield in memory devices
CN102265400A (zh) * 2008-10-23 2011-11-30 桑迪士克3D有限责任公司 展示减少的分层的基于碳的存储器元件和形成其的方法
US20100108976A1 (en) * 2008-10-30 2010-05-06 Sandisk 3D Llc Electronic devices including carbon-based films, and methods of forming such devices
US8421050B2 (en) * 2008-10-30 2013-04-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same
US8835892B2 (en) * 2008-10-30 2014-09-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same
US7915637B2 (en) * 2008-11-19 2011-03-29 Nantero, Inc. Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same
JP2010157569A (ja) * 2008-12-26 2010-07-15 Funai Electric Advanced Applied Technology Research Institute Inc メモリセルアレイ
WO2010078467A1 (en) * 2008-12-31 2010-07-08 Sandisk 3D, Llc Modulation of resistivity in carbon-based read-writeable materials
US8183121B2 (en) * 2009-03-31 2012-05-22 Sandisk 3D Llc Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance
US8509124B2 (en) * 2009-04-03 2013-08-13 Lg Electronics Inc. Method for transceiving a signal in wireless communication system
US8481396B2 (en) * 2009-10-23 2013-07-09 Sandisk 3D Llc Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same
US8551855B2 (en) * 2009-10-23 2013-10-08 Sandisk 3D Llc Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same
US8551850B2 (en) * 2009-12-07 2013-10-08 Sandisk 3D Llc Methods of forming a reversible resistance-switching metal-insulator-metal structure
US8222704B2 (en) * 2009-12-31 2012-07-17 Nantero, Inc. Compact electrical switching devices with nanotube elements, and methods of making same
US8450181B2 (en) * 2010-01-08 2013-05-28 Sandisk 3D Llc In-situ passivation methods to improve performance of polysilicon diode
WO2011097389A1 (en) * 2010-02-04 2011-08-11 Sandisk 3D Llc Non-volatile memory cell containing nanodots and method of making thereof
US8389375B2 (en) * 2010-02-11 2013-03-05 Sandisk 3D Llc Memory cell formed using a recess and methods for forming the same
US8237146B2 (en) * 2010-02-24 2012-08-07 Sandisk 3D Llc Memory cell with silicon-containing carbon switching layer and methods for forming the same
US20110210306A1 (en) * 2010-02-26 2011-09-01 Yubao Li Memory cell that includes a carbon-based memory element and methods of forming the same
US8481394B2 (en) * 2010-03-04 2013-07-09 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US8471360B2 (en) 2010-04-14 2013-06-25 Sandisk 3D Llc Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same
KR101110543B1 (ko) * 2010-04-21 2012-02-09 주식회사 하이닉스반도체 고집적 반도체 장치
US8436447B2 (en) 2010-04-23 2013-05-07 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
JP2012019191A (ja) * 2010-06-10 2012-01-26 Toshiba Corp 不揮発性記憶装置の製造方法
US8883589B2 (en) 2010-09-28 2014-11-11 Sandisk 3D Llc Counter doping compensation methods to improve diode performance
CN102117823B (zh) * 2010-11-04 2013-02-13 中国科学院上海微系统与信息技术研究所 电阻转换存储纳米结构及其自对准制造方法
US9018692B2 (en) * 2011-01-19 2015-04-28 Macronix International Co., Ltd. Low cost scalable 3D memory
KR20120137862A (ko) * 2011-06-13 2012-12-24 삼성전자주식회사 3차원 더블 크로스 포인트 어레이를 갖는 반도체 메모리 소자 및 그 제조방법
US9054295B2 (en) * 2011-08-23 2015-06-09 Micron Technology, Inc. Phase change memory cells including nitrogenated carbon materials, methods of forming the same, and phase change memory devices including nitrogenated carbon materials
JP5564023B2 (ja) 2011-09-08 2014-07-30 株式会社東芝 不揮発性記憶装置の製造方法
US9029936B2 (en) 2012-07-02 2015-05-12 Sandisk Technologies Inc. Non-volatile memory structure containing nanodots and continuous metal layer charge traps and method of making thereof
US8823075B2 (en) 2012-11-30 2014-09-02 Sandisk Technologies Inc. Select gate formation for nanodot flat cell
US8987802B2 (en) 2013-02-28 2015-03-24 Sandisk Technologies Inc. Method for using nanoparticles to make uniform discrete floating gate layer
US9331181B2 (en) 2013-03-11 2016-05-03 Sandisk Technologies Inc. Nanodot enhanced hybrid floating gate for non-volatile memory devices
US9214351B2 (en) 2013-03-12 2015-12-15 Macronix International Co., Ltd. Memory architecture of thin film 3D array
US9177808B2 (en) 2013-05-21 2015-11-03 Sandisk Technologies Inc. Memory device with control gate oxygen diffusion control and method of making thereof
US8969153B2 (en) 2013-07-01 2015-03-03 Sandisk Technologies Inc. NAND string containing self-aligned control gate sidewall cladding
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND
US9923139B2 (en) * 2016-03-11 2018-03-20 Micron Technology, Inc. Conductive hard mask for memory device formation
US9947400B2 (en) 2016-04-22 2018-04-17 Nantero, Inc. Methods for enhanced state retention within a resistive change cell
US10355206B2 (en) * 2017-02-06 2019-07-16 Nantero, Inc. Sealed resistive change elements
KR102767605B1 (ko) * 2017-02-20 2025-02-17 에스케이하이닉스 주식회사 카본 나노 튜브들을 갖는 시냅스를 포함하는 뉴로모픽 소자
CN110085589B (zh) * 2018-01-26 2021-03-26 中芯国际集成电路制造（天津）有限公司 碳纳米管模块、半导体器件及制造方法
US11349071B2 (en) * 2019-11-04 2022-05-31 Globalfoundries Singapore Pte. Ltd. Memory device and a method for forming the memory device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007067374A (ja) * 2005-08-31 2007-03-15 Samsung Electronics Co Ltd ナノ弾性メモリ素子及びその製造方法
JP2007165873A (ja) * 2005-12-12 2007-06-28 Hitachi Global Storage Technologies Netherlands Bv 単極抵抗ランダムアクセスメモリ（ｒｒａｍ）デバイス、および垂直スタックアーキテクチャ

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2136197A (en) 1996-03-01 1997-09-16 Micron Technology, Inc. Novel vertical diode structures with low series resistance
US5915167A (en) 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
US6034882A (en) 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6858481B2 (en) 2001-08-13 2005-02-22 Advanced Micro Devices, Inc. Memory device with active and passive layers
US7038935B2 (en) 2002-08-02 2006-05-02 Unity Semiconductor Corporation 2-terminal trapped charge memory device with voltage switchable multi-level resistance
US7767499B2 (en) 2002-12-19 2010-08-03 Sandisk 3D Llc Method to form upward pointing p-i-n diodes having large and uniform current
US6946719B2 (en) 2003-12-03 2005-09-20 Matrix Semiconductor, Inc Semiconductor device including junction diode contacting contact-antifuse unit comprising silicide
US7176064B2 (en) 2003-12-03 2007-02-13 Sandisk 3D Llc Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide
AU2003296988A1 (en) 2002-12-19 2004-07-29 Matrix Semiconductor, Inc An improved method for making high-density nonvolatile memory
CN1759450B (zh) 2003-03-18 2012-02-29 株式会社东芝 可编程阻抗存储器器件
EP1631812A4 (en) * 2003-05-14 2010-12-01 Nantero Inc SENSOR PLATFORM HAVING A HORIZONTAL NANOPHONE ELEMENT
JP4208668B2 (ja) * 2003-08-22 2009-01-14 富士通株式会社 半導体装置およびその製造方法
JP4769931B2 (ja) * 2004-02-16 2011-09-07 国立大学法人名古屋大学 カーボンナノチューブに対する電極の形成方法及びそれを用いたカーボンナノチューブｆｅｔ
US7135773B2 (en) * 2004-02-26 2006-11-14 International Business Machines Corporation Integrated circuit chip utilizing carbon nanotube composite interconnection vias
US7405465B2 (en) 2004-09-29 2008-07-29 Sandisk 3D Llc Deposited semiconductor structure to minimize n-type dopant diffusion and method of making
US7405165B2 (en) * 2004-11-05 2008-07-29 Taiwan Semiconductor Manufacturing Co, Ltd Dual-tank etch method for oxide thickness control
GB0426863D0 (en) 2004-12-07 2005-01-12 Univ Southampton Method of manufacturing carbon nanotubes
US7208372B2 (en) 2005-01-19 2007-04-24 Sharp Laboratories Of America, Inc. Non-volatile memory resistor cell with nanotip electrode
US7579631B2 (en) 2005-03-22 2009-08-25 Spansion Llc Variable breakdown characteristic diode
US7145824B2 (en) 2005-03-22 2006-12-05 Spansion Llc Temperature compensation of thin film diode voltage threshold in memory sensing circuit
US9196615B2 (en) * 2005-05-09 2015-11-24 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7781862B2 (en) * 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
US20060250836A1 (en) 2005-05-09 2006-11-09 Matrix Semiconductor, Inc. Rewriteable memory cell comprising a diode and a resistance-switching material
US7479654B2 (en) 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US7812404B2 (en) * 2005-05-09 2010-10-12 Sandisk 3D Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
WO2006133949A2 (en) 2005-06-17 2006-12-21 Interuniversitair Microelektronica Centrum Formation of metal-containing nanoparticles for use as catalysts in carbon nanotube synthysis
US7286388B1 (en) 2005-06-23 2007-10-23 Spansion Llc Resistive memory device with improved data retention
US7482653B2 (en) 2005-07-20 2009-01-27 Micron Technology, Inc. Non-volatile memory with carbon nanotubes
JP2007049084A (ja) 2005-08-12 2007-02-22 Toshiba Corp スイッチ素子、メモリ素子および磁気抵抗効果素子
US20070238319A1 (en) 2005-08-31 2007-10-11 Jewell-Larsen Nels E Mechanically actuated nanotube switches
JP5037804B2 (ja) * 2005-09-30 2012-10-03 富士通株式会社 垂直配向カーボンナノチューブを用いた電子デバイス
KR100695164B1 (ko) 2005-11-09 2007-03-14 삼성전자주식회사 스위칭 소자로서 트랜지스터 및 다이오드를 포함하는하이브리드 타입의 비휘발성 메모리 소자
US7385839B2 (en) 2005-12-01 2008-06-10 International Business Machines Corporation Memory devices using carbon nanotube (CNT) technologies
JP4843760B2 (ja) * 2005-12-26 2011-12-21 株式会社発明屋 カーボンナノチューブを用いた記憶素子
KR100674144B1 (ko) 2006-01-05 2007-01-29 한국과학기술원 탄소 나노 튜브를 이용한 상변화 메모리 및 이의 제조 방법
US7575984B2 (en) 2006-05-31 2009-08-18 Sandisk 3D Llc Conductive hard mask to protect patterned features during trench etch
TWI463673B (zh) 2006-08-08 2014-12-01 Nantero Inc 非揮發性奈米管二極體與非揮發性奈米管塊材及使用該等之系統以及製造該等之方法
US8030637B2 (en) 2006-08-25 2011-10-04 Qimonda Ag Memory element using reversible switching between SP2 and SP3 hybridized carbon
EP1892722A1 (en) 2006-08-25 2008-02-27 Infineon Technologies AG Information storage elements and methods of manufacture thereof
US7638383B2 (en) 2006-09-19 2009-12-29 Intel Corporation Faceted catalytic dots for directed nanotube growth
KR100791948B1 (ko) 2006-09-27 2008-01-04 삼성전자주식회사 탄소나노튜브 배선 형성방법 및 이를 이용한 반도체 소자의배선 형성방법
KR100801084B1 (ko) 2007-01-08 2008-02-05 삼성전자주식회사 저항체를 이용한 비휘발성 메모리 장치 및 그 제조 방법
US7846785B2 (en) 2007-06-29 2010-12-07 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US8233308B2 (en) 2007-06-29 2012-07-31 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US20090166610A1 (en) 2007-12-31 2009-07-02 April Schricker Memory cell with planarized carbon nanotube layer and methods of forming the same
US8558220B2 (en) 2007-12-31 2013-10-15 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007067374A (ja) * 2005-08-31 2007-03-15 Samsung Electronics Co Ltd ナノ弾性メモリ素子及びその製造方法
JP2007165873A (ja) * 2005-12-12 2007-06-28 Hitachi Global Storage Technologies Netherlands Bv 単極抵抗ランダムアクセスメモリ（ｒｒａｍ）デバイス、および垂直スタックアーキテクチャ

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US20090168491A1 (en) 2009-07-02
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