KR101480198B1 - 오염 및 표면 열화를 최소화하기 위한 층간 유전체의 표면 개질 - Google Patents

오염 및 표면 열화를 최소화하기 위한 층간 유전체의 표면 개질 Download PDF

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KR101480198B1
KR101480198B1 KR20087030079A KR20087030079A KR101480198B1 KR 101480198 B1 KR101480198 B1 KR 101480198B1 KR 20087030079 A KR20087030079 A KR 20087030079A KR 20087030079 A KR20087030079 A KR 20087030079A KR 101480198 B1 KR101480198 B1 KR 101480198B1
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dielectric layer
conductor
capping
layer
cleaning
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KR20090017581A (ko
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어르투르 콜리치
난하이 리
마리나 폴리안스카야
마크 웨이즈
제이슨 코넬리
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램 리써치 코포레이션
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02Inorganic compounds
    • C11D7/04Water-soluble compounds
    • C11D7/08Acids
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/01Manufacture or treatment
    • H10D64/011Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06Planarisation of inorganic insulating materials
    • H10P95/062Planarisation of inorganic insulating materials involving a dielectric removal step
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/037Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0523Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by irradiating with ultraviolet or particle radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0526Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by thermal treatment thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/071Manufacture or treatment of dielectric parts thereof
    • H10W20/074Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
KR20087030079A 2006-06-09 2007-06-09 오염 및 표면 열화를 최소화하기 위한 층간 유전체의 표면 개질 Active KR101480198B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US80442506P 2006-06-09 2006-06-09
US60/804,425 2006-06-09
US11/760,722 2007-06-08
US11/760,722 US7772128B2 (en) 2006-06-09 2007-06-08 Semiconductor system with surface modification
PCT/US2007/070820 WO2007146848A2 (en) 2006-06-09 2007-06-09 Surface modification of interlayer dielectric for minimizing contamination and surface degradation

Publications (2)

Publication Number Publication Date
KR20090017581A KR20090017581A (ko) 2009-02-18
KR101480198B1 true KR101480198B1 (ko) 2015-01-07

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Country Status (6)

Country Link
US (3) US7772128B2 (https=)
JP (1) JP5078997B2 (https=)
KR (1) KR101480198B1 (https=)
CN (2) CN102522368A (https=)
TW (1) TWI360198B (https=)
WO (1) WO2007146848A2 (https=)

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US11842903B2 (en) 2019-10-02 2023-12-12 Semes Co., Ltd. Apparatus for treating substrate and method for treating substrate

Also Published As

Publication number Publication date
JP2009540581A (ja) 2009-11-19
US7772128B2 (en) 2010-08-10
KR20090017581A (ko) 2009-02-18
JP5078997B2 (ja) 2012-11-21
TWI360198B (en) 2012-03-11
US20090072190A1 (en) 2009-03-19
TW200805567A (en) 2008-01-16
CN101467232A (zh) 2009-06-24
CN102522368A (zh) 2012-06-27
CN101467232B (zh) 2012-02-22
WO2007146848A3 (en) 2008-03-06
WO2007146848A2 (en) 2007-12-21
US20070287277A1 (en) 2007-12-13
US20140099789A1 (en) 2014-04-10
US9406556B2 (en) 2016-08-02

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