CN102522368A - 用于使污染及表面退化最小化的中间介电层的表面改变 - Google Patents

用于使污染及表面退化最小化的中间介电层的表面改变 Download PDF

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Publication number
CN102522368A
CN102522368A CN2011104101370A CN201110410137A CN102522368A CN 102522368 A CN102522368 A CN 102522368A CN 2011104101370 A CN2011104101370 A CN 2011104101370A CN 201110410137 A CN201110410137 A CN 201110410137A CN 102522368 A CN102522368 A CN 102522368A
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CN
China
Prior art keywords
ppm
cleaning solution
subranges
corrosion inhibitor
oxygen scavenger
Prior art date
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Pending
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CN2011104101370A
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English (en)
Chinese (zh)
Inventor
阿尔图尔·科利奇
李南海
玛丽娜·波利扬斯基亚
马克·韦斯
詹森·科尔内耶
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Lam Research Corp
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Lam Research Corp
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Publication of CN102522368A publication Critical patent/CN102522368A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0523—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by irradiating with ultraviolet or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0526—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by thermal treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
CN2011104101370A 2006-06-09 2007-06-09 用于使污染及表面退化最小化的中间介电层的表面改变 Pending CN102522368A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US80442506P 2006-06-09 2006-06-09
US60/804,425 2006-06-09
US11/760,722 2007-06-08
US11/760,722 US7772128B2 (en) 2006-06-09 2007-06-08 Semiconductor system with surface modification

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2007800213631A Division CN101467232B (zh) 2006-06-09 2007-06-09 用于使污染及表面退化最小化的中间介电层的表面改变

Publications (1)

Publication Number Publication Date
CN102522368A true CN102522368A (zh) 2012-06-27

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Family Applications (2)

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CN2011104101370A Pending CN102522368A (zh) 2006-06-09 2007-06-09 用于使污染及表面退化最小化的中间介电层的表面改变
CN2007800213631A Active CN101467232B (zh) 2006-06-09 2007-06-09 用于使污染及表面退化最小化的中间介电层的表面改变

Family Applications After (1)

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CN2007800213631A Active CN101467232B (zh) 2006-06-09 2007-06-09 用于使污染及表面退化最小化的中间介电层的表面改变

Country Status (6)

Country Link
US (3) US7772128B2 (https=)
JP (1) JP5078997B2 (https=)
KR (1) KR101480198B1 (https=)
CN (2) CN102522368A (https=)
TW (1) TWI360198B (https=)
WO (1) WO2007146848A2 (https=)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9058975B2 (en) 2006-06-09 2015-06-16 Lam Research Corporation Cleaning solution formulations for substrates
US9691622B2 (en) 2008-09-07 2017-06-27 Lam Research Corporation Pre-fill wafer cleaning formulation
US8361237B2 (en) * 2008-12-17 2013-01-29 Air Products And Chemicals, Inc. Wet clean compositions for CoWP and porous dielectrics
US9053924B2 (en) 2008-12-26 2015-06-09 Central Glass Company, Limited Cleaning agent for silicon wafer
US7977235B2 (en) * 2009-02-02 2011-07-12 Tokyo Electron Limited Method for manufacturing a semiconductor device with metal-containing cap layers
KR20100110123A (ko) * 2009-04-02 2010-10-12 삼성전자주식회사 반도체 소자의 제조 방법
CN102224577B (zh) * 2009-05-29 2013-12-04 三井化学株式会社 半导体用密封组合物、半导体装置及半导体装置的制造方法
AU2010310750B2 (en) 2009-10-23 2015-02-26 President And Fellows Of Harvard College Self-aligned barrier and capping layers for interconnects
KR101801413B1 (ko) * 2009-12-23 2017-12-20 램 리써치 코포레이션 퇴적 후 웨이퍼 세정 포뮬레이션
WO2012003416A1 (en) 2010-07-02 2012-01-05 3M Innovative Properties Company Barrier assembly
KR101266620B1 (ko) 2010-08-20 2013-05-22 다이닛뽕스크린 세이조오 가부시키가이샤 기판처리방법 및 기판처리장치
JP6172306B2 (ja) * 2011-01-12 2017-08-02 セントラル硝子株式会社 保護膜形成用薬液
US9059176B2 (en) * 2012-04-20 2015-06-16 International Business Machines Corporation Copper interconnect with CVD liner and metallic cap
TWI610806B (zh) 2012-08-08 2018-01-11 ３Ｍ新設資產公司 障壁膜，製造該障壁膜之方法，及包含該障壁膜之物件
TWI689004B (zh) 2012-11-26 2020-03-21 美商應用材料股份有限公司 用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理
JP5674851B2 (ja) * 2013-04-09 2015-02-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US8962479B2 (en) * 2013-05-10 2015-02-24 International Business Machines Corporation Interconnect structures containing nitrided metallic residues
US10283344B2 (en) 2014-07-11 2019-05-07 Applied Materials, Inc. Supercritical carbon dioxide process for low-k thin films
US9349691B2 (en) * 2014-07-24 2016-05-24 International Business Machines Corporation Semiconductor device with reduced via resistance
US9425087B1 (en) * 2015-05-29 2016-08-23 Taiwan Semiconductor Manufacturing Co., Ltd Method for forming semiconductor device structure
CN116206947A (zh) 2015-10-04 2023-06-02 应用材料公司 缩减空间的处理腔室
JP6639657B2 (ja) 2015-10-04 2020-02-05 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 熱質量が小さい加圧チャンバ
CN108140603B (zh) 2015-10-04 2023-02-28 应用材料公司 基板支撑件和挡板设备
KR102054605B1 (ko) 2015-10-04 2019-12-10 어플라이드 머티어리얼스, 인코포레이티드 고 종횡비 피처들을 위한 건조 프로세스
US9536780B1 (en) 2016-04-15 2017-01-03 International Business Machines Corporation Method and apparatus for single chamber treatment
CN108573942B (zh) 2017-03-09 2021-09-14 联华电子股份有限公司 内连线结构及其制作方法
US10832917B2 (en) 2017-06-09 2020-11-10 International Business Machines Corporation Low oxygen cleaning for CMP equipment
US10790142B2 (en) * 2017-11-28 2020-09-29 Taiwan Semiconductor Manufacturing Co., Ltd. Selective capping processes and structures formed thereby
KR102780321B1 (ko) * 2019-07-18 2025-03-11 도쿄엘렉트론가부시키가이샤 영역 선택적 증착에서 측면 필름 성장의 완화 방법
KR102262250B1 (ko) 2019-10-02 2021-06-09 세메스 주식회사 기판 처리 설비 및 기판 처리 방법
KR102876645B1 (ko) 2021-02-08 2025-10-28 맥더미드 엔쏜 인코포레이티드 확산 장벽 형성을 위한 방법 및 습식 화학 조성물

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6355198B1 (en) * 1996-03-15 2002-03-12 President And Fellows Of Harvard College Method of forming articles including waveguides via capillary micromolding and microtransfer molding
US6372633B1 (en) * 1998-07-08 2002-04-16 Applied Materials, Inc. Method and apparatus for forming metal interconnects
US7208049B2 (en) * 2003-10-20 2007-04-24 Air Products And Chemicals, Inc. Process solutions containing surfactants used as post-chemical mechanical planarization treatment
US6323128B1 (en) * 1999-05-26 2001-11-27 International Business Machines Corporation Method for forming Co-W-P-Au films
TW479262B (en) * 1999-06-09 2002-03-11 Showa Denko Kk Electrode material for capacitor and capacitor using the same
KR20030007969A (ko) * 2000-06-16 2003-01-23 카오카부시키가이샤 세정제 조성물
JP2002069495A (ja) * 2000-06-16 2002-03-08 Kao Corp 洗浄剤組成物
CN1264391C (zh) * 2001-06-27 2006-07-12 日本特殊陶业株式会社 布线基板的制造方法
JP3787085B2 (ja) * 2001-12-04 2006-06-21 関東化学株式会社 フォトレジスト残渣除去液組成物
US7119418B2 (en) * 2001-12-31 2006-10-10 Advanced Technology Materials, Inc. Supercritical fluid-assisted deposition of materials on semiconductor substrates
US6716771B2 (en) * 2002-04-09 2004-04-06 Intel Corporation Method for post-CMP conversion of a hydrophobic surface of a low-k dielectric layer to a hydrophilic surface
US7060330B2 (en) * 2002-05-08 2006-06-13 Applied Materials, Inc. Method for forming ultra low k films using electron beam
JP4221191B2 (ja) * 2002-05-16 2009-02-12 関東化学株式会社 Ｃｍｐ後洗浄液組成物
US20040077295A1 (en) * 2002-08-05 2004-04-22 Hellring Stuart D. Process for reducing dishing and erosion during chemical mechanical planarization
US7005390B2 (en) * 2002-10-09 2006-02-28 Intel Corporation Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials
JP3902127B2 (ja) * 2002-12-12 2007-04-04 株式会社荏原製作所 めっき方法及び基板処理装置
TWI324362B (en) * 2003-01-10 2010-05-01 Kanto Kagaku Cleaning solution for semiconductor substrate
US7115517B2 (en) * 2003-04-07 2006-10-03 Applied Materials, Inc. Method of fabricating a dual damascene interconnect structure
US6924232B2 (en) * 2003-08-27 2005-08-02 Freescale Semiconductor, Inc. Semiconductor process and composition for forming a barrier material overlying copper
TWI362415B (en) * 2003-10-27 2012-04-21 Wako Pure Chem Ind Ltd Novel detergent and method for cleaning
US20060003570A1 (en) * 2003-12-02 2006-01-05 Arulkumar Shanmugasundram Method and apparatus for electroless capping with vapor drying
KR100795364B1 (ko) * 2004-02-10 2008-01-17 삼성전자주식회사 반도체 기판용 세정액 조성물, 이를 이용한 세정 방법 및도전성 구조물의 제조 방법
BRPI0508291A (pt) * 2004-03-01 2007-07-31 Mallinckrodt Baker Inc composições e processo de limpeza para substratos nanoeletrÈnicas e microeletrÈnicas para limpeza
US7087564B2 (en) * 2004-03-05 2006-08-08 Air Liquide America, L.P. Acidic chemistry for post-CMP cleaning
US7611996B2 (en) * 2004-03-31 2009-11-03 Applied Materials, Inc. Multi-stage curing of low K nano-porous films
JP4456424B2 (ja) * 2004-06-29 2010-04-28 関東化学株式会社 フォトレジスト残渣及びポリマー残渣除去組成物
EP1628336B1 (en) * 2004-08-18 2012-01-04 Mitsubishi Gas Chemical Company, Inc. Cleaning liquid and cleaning method
US20060063382A1 (en) * 2004-09-17 2006-03-23 Dubin Valery M Method to fabricate copper-cobalt interconnects
US7611588B2 (en) * 2004-11-30 2009-11-03 Ecolab Inc. Methods and compositions for removing metal oxides
US20060128144A1 (en) * 2004-12-15 2006-06-15 Hyun-Mog Park Interconnects having a recessed capping layer and methods of fabricating the same
US20070179072A1 (en) * 2006-01-30 2007-08-02 Rao Madhukar B Cleaning formulations
JP2007291505A (ja) 2006-03-31 2007-11-08 Sanyo Chem Ind Ltd 銅配線用洗浄剤
US8404626B2 (en) * 2007-12-21 2013-03-26 Lam Research Corporation Post-deposition cleaning methods and formulations for substrates with cap layers

Also Published As

Publication number Publication date
JP2009540581A (ja) 2009-11-19
US7772128B2 (en) 2010-08-10
KR20090017581A (ko) 2009-02-18
JP5078997B2 (ja) 2012-11-21
TWI360198B (en) 2012-03-11
US20090072190A1 (en) 2009-03-19
TW200805567A (en) 2008-01-16
CN101467232A (zh) 2009-06-24
CN101467232B (zh) 2012-02-22
WO2007146848A3 (en) 2008-03-06
WO2007146848A2 (en) 2007-12-21
KR101480198B1 (ko) 2015-01-07
US20070287277A1 (en) 2007-12-13
US20140099789A1 (en) 2014-04-10
US9406556B2 (en) 2016-08-02

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Application publication date: 20120627