WO2007146848A2 - Surface modification of interlayer dielectric for minimizing contamination and surface degradation - Google Patents

Surface modification of interlayer dielectric for minimizing contamination and surface degradation Download PDF

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Publication number
WO2007146848A2
WO2007146848A2 PCT/US2007/070820 US2007070820W WO2007146848A2 WO 2007146848 A2 WO2007146848 A2 WO 2007146848A2 US 2007070820 W US2007070820 W US 2007070820W WO 2007146848 A2 WO2007146848 A2 WO 2007146848A2
Authority
WO
WIPO (PCT)
Prior art keywords
die
dielectric layer
ihc
conductor
capping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/070820
Other languages
English (en)
French (fr)
Other versions
WO2007146848A3 (en
Inventor
Artur Kolics
Nanhai Li
Marina Polyanskaya
Mark Weise
Jason Corneille
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Priority to CN2007800213631A priority Critical patent/CN101467232B/zh
Priority to KR20087030079A priority patent/KR101480198B1/ko
Priority to JP2009514560A priority patent/JP5078997B2/ja
Publication of WO2007146848A2 publication Critical patent/WO2007146848A2/en
Publication of WO2007146848A3 publication Critical patent/WO2007146848A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0523—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by irradiating with ultraviolet or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0526—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by thermal treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers

Definitions

  • TECHMICAi FIELD l:hc present itwfMkm aisles psiemlv to pmMsmduetor .s ⁇ te.ti3&, and more ⁇ eo&siJIy to advanced ⁇ miso ⁇ ifcetGr mtrswlk ⁇ urksg $j « sfe ⁇ B w.d device ⁇ st ⁇ m.
  • the -didksctne b ⁇ erss are s ⁇ e €l ⁇ sd IB sar&ee cftaitsmi ⁇ tbK :is ⁇ the mat ⁇ ulaeti-ems* pmcess
  • hin der lii ⁇ i 1 be uicre ⁇ tc m mn ⁇ turc b ⁇ ski-yp C ⁇ H p ⁇ u ⁇ vlo (lie ⁇ xuia ⁇ c ⁇ o? the to? ⁇ v U>CT v ⁇ f ⁇ i (. tt jsl thi?
  • Tl ⁇ adviMaggs will teeTM s ⁇ pwm to tfess -$ki ⁇ k ⁇ m ⁇ m m% fmm a reasling of ⁇ hs? folbwlssg; delisilOd des ⁇ fiplios ⁇ Whso tskpi. with ⁇ fae ⁇ s to tlis ac € ⁇ rs ⁇ iss ⁇ sssg
  • FlCl, 6 is & dose up view of the ⁇ mi ⁇ diiCfOT m:t «r ⁇ > ⁇ mx ⁇ : ai ⁇ r an o.s ⁇ kfe :re:o»v&! sts ⁇ 20 ⁇ ccarding to a seeprf gofedimenl. ef tlae pressM m ⁇ astk>.ra;
  • wl'sere imiltiple fi ⁇ nhodUne ⁇ are disc ⁇ Sv ⁇ i ami d ⁇ cnheti having ⁇ > ⁇ KS fc ⁇ ures i ⁇ i c ⁇ u?] ⁇ ii.s ⁇ 5, tW ck ⁇ ity «5M! eaae of sUus.uiat3O?5 k ⁇ so"i ⁇ k> ⁇ USKI ctf ⁇ pr ⁇ hcn ⁇ k ⁇ IISCRI ⁇ C
  • PRK&s ⁇ ea c, d. a! ⁇ l e aire aiso i ⁇ cluil ⁇ d is ? II ⁇ post-snsairmtH pha ⁇ e csCtbe cappmg p?oc- ⁇ &.s.
  • ⁇ dideciOL' layer 1(14, »Ltcf ⁇ a,-? ⁇ & ILD, l ⁇ as hee& deposited on ?he sen ⁇ ico ⁇ d ⁇ ctor vvafo Ii ⁇ -, TIw dkitdric lmyer KM is of cHcksf ⁇ c ms ⁇ nls s ⁇ ch a ⁇ silicon o ⁇ id? ⁇ SC ⁇ > M) ⁇ e$rse?hsi> ⁇ ysit ⁇ &£ tl Et)S), h»>mph ⁇ >sphnsilicate (, B PSG J g ⁇ ss, eic. wills dselectrk constants, from 4.2 k5 3.
  • the capping layer 700 cars be s meta I or meta ⁇ co ⁇ iposmd s ⁇ ch ss c ⁇ Kih i.Co ) or ⁇ ibsh t ⁇ ) lig ten plk ⁇ ptu.' ⁇ KH-i « f Cu'WP) dqju ⁇ i ⁇ il by dectr ⁇ fe ⁇ deposit iu ⁇ ,

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
PCT/US2007/070820 2006-06-09 2007-06-09 Surface modification of interlayer dielectric for minimizing contamination and surface degradation Ceased WO2007146848A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2007800213631A CN101467232B (zh) 2006-06-09 2007-06-09 用于使污染及表面退化最小化的中间介电层的表面改变
KR20087030079A KR101480198B1 (ko) 2006-06-09 2007-06-09 오염 및 표면 열화를 최소화하기 위한 층간 유전체의 표면 개질
JP2009514560A JP5078997B2 (ja) 2006-06-09 2007-06-09 汚染および表面分解を最小限に抑えるための層間絶縁膜の表面改質

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US80442506P 2006-06-09 2006-06-09
US60/804,425 2006-06-09
US11/760,722 2007-06-08
US11/760,722 US7772128B2 (en) 2006-06-09 2007-06-08 Semiconductor system with surface modification

Publications (2)

Publication Number Publication Date
WO2007146848A2 true WO2007146848A2 (en) 2007-12-21
WO2007146848A3 WO2007146848A3 (en) 2008-03-06

Family

ID=38822490

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/070820 Ceased WO2007146848A2 (en) 2006-06-09 2007-06-09 Surface modification of interlayer dielectric for minimizing contamination and surface degradation

Country Status (6)

Country Link
US (3) US7772128B2 (https=)
JP (1) JP5078997B2 (https=)
KR (1) KR101480198B1 (https=)
CN (2) CN102522368A (https=)
TW (1) TWI360198B (https=)
WO (1) WO2007146848A2 (https=)

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US8821974B2 (en) 2010-08-20 2014-09-02 Dainippon Screen Mfg. Co., Ltd. Substrate processing method
US9058975B2 (en) 2006-06-09 2015-06-16 Lam Research Corporation Cleaning solution formulations for substrates

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9058975B2 (en) 2006-06-09 2015-06-16 Lam Research Corporation Cleaning solution formulations for substrates
JP2013508979A (ja) * 2009-10-23 2013-03-07 プレジデント アンド フェロウズ オブ ハーバード カレッジ 相互接続用自己整合バリアおよびキャッピング層
US8821974B2 (en) 2010-08-20 2014-09-02 Dainippon Screen Mfg. Co., Ltd. Substrate processing method
US9005703B2 (en) 2010-08-20 2015-04-14 SCREEN Holdings Co., Ltd. Substrate processing method
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TWI360198B (en) 2012-03-11
US20090072190A1 (en) 2009-03-19
TW200805567A (en) 2008-01-16
CN101467232A (zh) 2009-06-24
CN102522368A (zh) 2012-06-27
CN101467232B (zh) 2012-02-22
WO2007146848A3 (en) 2008-03-06
KR101480198B1 (ko) 2015-01-07
US20070287277A1 (en) 2007-12-13
US20140099789A1 (en) 2014-04-10
US9406556B2 (en) 2016-08-02

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