KR101434660B1 - 신규 흡광제 및 이를 포함하는 유기 반사 방지막 형성용 조성물 - Google Patents

신규 흡광제 및 이를 포함하는 유기 반사 방지막 형성용 조성물 Download PDF

Info

Publication number
KR101434660B1
KR101434660B1 KR1020120148493A KR20120148493A KR101434660B1 KR 101434660 B1 KR101434660 B1 KR 101434660B1 KR 1020120148493 A KR1020120148493 A KR 1020120148493A KR 20120148493 A KR20120148493 A KR 20120148493A KR 101434660 B1 KR101434660 B1 KR 101434660B1
Authority
KR
South Korea
Prior art keywords
group
carbon atoms
forming
substituted
composition
Prior art date
Application number
KR1020120148493A
Other languages
English (en)
Korean (ko)
Other versions
KR20140079032A (ko
Inventor
최정훈
이은교
이진한
한은희
김삼민
Original Assignee
금호석유화학 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금호석유화학 주식회사 filed Critical 금호석유화학 주식회사
Priority to KR1020120148493A priority Critical patent/KR101434660B1/ko
Priority to CN201310370128.2A priority patent/CN103865478B/zh
Priority to JP2013183179A priority patent/JP5753236B2/ja
Priority to TW102132513A priority patent/TWI506360B/zh
Publication of KR20140079032A publication Critical patent/KR20140079032A/ko
Application granted granted Critical
Publication of KR101434660B1 publication Critical patent/KR101434660B1/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/111—Anti-reflection coatings using layers comprising organic materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0041—Photosensitive materials providing an etching agent upon exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
KR1020120148493A 2012-12-18 2012-12-18 신규 흡광제 및 이를 포함하는 유기 반사 방지막 형성용 조성물 KR101434660B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020120148493A KR101434660B1 (ko) 2012-12-18 2012-12-18 신규 흡광제 및 이를 포함하는 유기 반사 방지막 형성용 조성물
CN201310370128.2A CN103865478B (zh) 2012-12-18 2013-08-22 新型吸光剂及含有它的用于形成有机抗反射膜的组合物
JP2013183179A JP5753236B2 (ja) 2012-12-18 2013-09-04 新規な吸光剤及びこれを含む有機反射防止膜形成用組成物
TW102132513A TWI506360B (zh) 2012-12-18 2013-09-10 新型吸光劑及含有它的用於形成有機抗反射膜的組合物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120148493A KR101434660B1 (ko) 2012-12-18 2012-12-18 신규 흡광제 및 이를 포함하는 유기 반사 방지막 형성용 조성물

Publications (2)

Publication Number Publication Date
KR20140079032A KR20140079032A (ko) 2014-06-26
KR101434660B1 true KR101434660B1 (ko) 2014-08-28

Family

ID=50904507

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120148493A KR101434660B1 (ko) 2012-12-18 2012-12-18 신규 흡광제 및 이를 포함하는 유기 반사 방지막 형성용 조성물

Country Status (4)

Country Link
JP (1) JP5753236B2 (ja)
KR (1) KR101434660B1 (ja)
CN (1) CN103865478B (ja)
TW (1) TWI506360B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102487404B1 (ko) * 2017-07-26 2023-01-12 에스케이이노베이션 주식회사 바닥반사 방지막 형성용 중합체 및 이를 포함하는 바닥반사 방지막 형성용 조성물

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100894218B1 (ko) * 2008-04-11 2009-04-22 금호석유화학 주식회사 흡광제 및 이를 포함하는 유기 반사 방지막 조성물

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100997502B1 (ko) * 2008-08-26 2010-11-30 금호석유화학 주식회사 개환된 프탈릭 언하이드라이드를 포함하는 유기 반사 방지막 조성물과 이의 제조방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100894218B1 (ko) * 2008-04-11 2009-04-22 금호석유화학 주식회사 흡광제 및 이를 포함하는 유기 반사 방지막 조성물

Also Published As

Publication number Publication date
JP2014118409A (ja) 2014-06-30
JP5753236B2 (ja) 2015-07-22
CN103865478A (zh) 2014-06-18
TW201426168A (zh) 2014-07-01
KR20140079032A (ko) 2014-06-26
TWI506360B (zh) 2015-11-01
CN103865478B (zh) 2016-06-01

Similar Documents

Publication Publication Date Title
KR100997502B1 (ko) 개환된 프탈릭 언하이드라이드를 포함하는 유기 반사 방지막 조성물과 이의 제조방법
JP2015134926A (ja) 上塗りフォトレジストと共に使用するためのコーティング組成物
KR20080114492A (ko) 유기반사방지막용 공중합체 및 이를 포함하는유기반사방지막 조성물
KR100894218B1 (ko) 흡광제 및 이를 포함하는 유기 반사 방지막 조성물
JPWO2010104074A1 (ja) 側鎖にアセタール構造を有するポリマーを含むレジスト下層膜形成組成物及びレジストパターンの形成方法
KR101657052B1 (ko) 유기 반사 방지막 조성물
KR101910829B1 (ko) 포토리소그래피용 오버코트 조성물 및 방법
KR102414150B1 (ko) 바닥반사방지막 형성용 중합체, 이를 포함하는 바닥반사방지막 형성용 조성물 및 이를 이용한 바닥반사방지막의 형성방법
KR101434660B1 (ko) 신규 흡광제 및 이를 포함하는 유기 반사 방지막 형성용 조성물
KR102516390B1 (ko) 신규한 티오바르비투르산 유도체, 이로부터 유도되는 반복 단위를 포함하는 중합체, 이를 포함하는 바닥반사방지막용 조성물 및 이를 이용한 레지스트 패턴의 형성 방법
JP6637548B2 (ja) オーバーコートされたフォトレジストと共に用いるためのコーティング組成物
JP5534205B2 (ja) 感光性レジスト下層膜形成組成物及びレジストパターンの形成方法
KR20190140261A (ko) 고분자 가교제, 이를 포함하는 레지스트 하층막용 조성물, 및 이를 이용한 패턴형성방법
JP2020528476A (ja) 底反射防止膜形成用の重合体およびこれを含む底反射防止膜形成用の組成物
KR20190078309A (ko) 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
TW202231626A (zh) 感放射線性樹脂組成物及使用其的抗蝕劑圖案的形成方法、以及鋶鹽化合物及包含鋶鹽化合物的感放射線性酸產生劑
KR101347482B1 (ko) 유기 반사 방지막용 흡광제 및 이를 포함하는 유기 반사 방지막용 조성물
KR101262445B1 (ko) 흡광제 및 이를 포함하는 유기 반사 방지막 조성물
KR101220074B1 (ko) 유기 반사 방지막용 흡광제 및 이를 포함하는 유기 반사 방지막용 조성물
KR20120078674A (ko) 오버코팅된 포토레지스트와 함께 사용되기 위한 코팅조성물

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20170622

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20190730

Year of fee payment: 6