KR101397300B1 - Wafer processing tape - Google Patents

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KR101397300B1
KR101397300B1 KR1020110048381A KR20110048381A KR101397300B1 KR 101397300 B1 KR101397300 B1 KR 101397300B1 KR 1020110048381 A KR1020110048381 A KR 1020110048381A KR 20110048381 A KR20110048381 A KR 20110048381A KR 101397300 B1 KR101397300 B1 KR 101397300B1
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adhesive layer
peeling
tape
film
pressure
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KR20130129487A (en
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치까꼬 가와따
구니히꼬 이시구로
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후루카와 덴키 고교 가부시키가이샤
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Abstract

Thereby preventing the adhesive layer from peeling off the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape.
The peeling force of the outer peripheral portion 32 of the adhesive layer 3 is larger than the peeling force of the bonding portion 30 to be bonded to the semiconductor wafer of the adhesive layer 3, The peeling force of the outer peripheral portion 32 is smaller than 30 times or more than 0.9 N / inch of the joining portion 30 and is smaller than that of the joining portion 30 ) Is less than 0.9 N / inch, the peeling force of the outer peripheral portion 32 is 0.9 N / inch or more.

Description

Wafer processing tape {WAFER PROCESSING TAPE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer processing tape, and more particularly to a wafer processing tape used for dicing and picking up semiconductor wafers.

There has been developed a " wafer processing tape " having both functions of a dicing tape for fixing a semiconductor wafer when cutting a semiconductor wafer into individual semiconductor chips and a die bonding film for bonding the cut semiconductor chip to a substrate or the like . The wafer processing tape mainly comprises a release film, an adhesive tape serving as a dicing tape, and an adhesive layer functioning as a die bonding film.

In recent years, in the field of electronic devices such as memories for portable apparatuses, further thinning and high capacity have been required. As a result, the demand for a mounting technique for stacking semiconductor chips having a thickness of 50 탆 or less in multi-layers is increasing year by year.

In order to comply with such a request, the above-described wafer processing tape capable of being thinned and capable of embedding unevenness of the circuit surface of a semiconductor chip has been developed and disclosed (see, for example, Patent Documents 1 and 2 Reference).

The tape for wafer processing generally has a size larger than the size of the semiconductor wafer but is not in contact with the ring frame and is punched from the adhesive layer side to the interface portion between the adhesive layer and the pressure sensitive adhesive layer. Bonded to the wafer and the ring frame supporting it, and cut into a circle on the ring frame.

Recently, in consideration of the above workability, the wafer processing tape is subjected to free cutting processing. The "pre-cut processing" means that the adhesive tape (the pressure-sensitive adhesive layer is formed on the base film) is subjected to punching in advance. Specifically, the base film and the pressure-sensitive adhesive layer can be bonded to the ring frame And punching is performed in a circular shape so as not to protrude from the ring frame.

As shown in Fig. 5, in the process of joining the wafer to the semiconductor wafer W by the wafer mounter, the circularly punched wafer for processing tape 1 is peeled off from the peeling wedge The semiconductor wafer W and the ring frame 5 are joined by the joining roller 103 after the peeling film from the peeling film 2 is obtained by the joining roller 101 so that the adhesive tape The cutting process can be omitted, and the damage to the ring frame can be eliminated.

Thereafter, the semiconductor wafer is diced to fabricate a plurality of semiconductor chips, and the peeling strength (adhesive force) between the pressure-sensitive adhesive layer and the adhesive layer is sufficiently lowered by irradiating the adhesive tape from the base film side of the pressure-sensitive adhesive tape. The base film is expanded to pick up the semiconductor chip. The term " radiation " means ionizing radiation such as ultraviolet rays or electron beams.

Japanese Patent Application Laid-Open No. 2000-154356 Japanese Patent Laying-Open No. 2003-60127

When the peeling film is peeled off from the wafer processing tape subjected to the precut processing in the bonding process for the semiconductor wafer by the wafer mounter, when the tip portion of the wafer processing tape passes the peeling wedge, The leading end portion of the adhesive layer is peeled off from the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape, causing a problem that portions where the adhesive layer does not adhere to the semiconductor wafer occur.

For this reason, the peeling force (adhesive force) between the adhesive layer and the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape is extremely low.

However, it is known that raising the peeling force between the adhesive layer and the pressure-sensitive adhesive layer can cause pickup errors when picking up a semiconductor chip by expanding the base film in a subsequent step.

As a recent tendency, in order to laminate more semiconductor chips in a single semiconductor package, the thickness of the semiconductor chip is gradually increasing. In order to make the pickup of the semiconductor chip of such a thin film mistakenly, It is required to lower the peeling force between the layer and the pressure-sensitive adhesive layer, so that it is difficult to easily raise the peeling force.

It is therefore a primary object of the present invention to provide a wafer processing tape capable of preventing peeling of an adhesive layer from an adhesive layer of an adhesive tape in a bonding step to a semiconductor wafer.

According to an aspect of the present invention,

A peeling film,

An adhesive layer partially formed on the release film,

An adhesive tape comprising a substrate film and a pressure-sensitive adhesive layer formed thereon, wherein the adhesive tape is laminated on the adhesive layer so as to be in contact with the release film around the adhesive layer,

Wherein the peeling force between the outer periphery of the adhesive layer and the pressure-sensitive adhesive layer is greater than the peeling force between the semiconductor wafer of the adhesive layer and the pressure-sensitive adhesive layer of the to- / RTI >

According to another aspect of the present invention,

A peeling film,

An adhesive layer partially formed on the release film,

An adhesive tape comprising a substrate film and a pressure-sensitive adhesive layer formed thereon, wherein the adhesive tape is laminated on the adhesive layer so as to be in contact with the release film around the adhesive layer,

Wherein a peeling force between a portion of the outer circumferential portion of the adhesive layer and a portion of the portion including the starting point that is a starting point of peeling from the peeling film at the time of bonding the semiconductor wafer to the pressure sensitive adhesive layer, Is larger than the peeling force between the adhesive layer and the intended adhesive bonding portion of the intended bonding portion.

According to another aspect of the present invention,

A peeling film,

An adhesive layer partially formed on the release film,

An adhesive tape comprising a substrate film and a pressure-sensitive adhesive layer formed thereon, wherein the adhesive tape is laminated on the adhesive layer so as to be in contact with the release film around the adhesive layer,

The peeling force between the outer periphery of the adhesive layer and the starting point portion serving as a starting point of peeling from the peeling film at the time of bonding of the semiconductor wafer to the peeling strength between the peeling film and the peeling- Is larger than the peeling force between the pressure-sensitive adhesive layer and the pressure-sensitive adhesive layer.

According to the present invention, in the bonding step for the semiconductor wafer, the peeling force of the adhesive layer on the adhesive layer of the adhesive tape Can be prevented from being peeled off.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a schematic configuration of a wafer processing tape. Fig.
2 is a longitudinal sectional view showing a schematic laminated structure of a release film, an adhesive layer and an adhesive tape.
3 is a plan view showing a schematic structure of an adhesive layer.
4 is a longitudinal sectional view showing a schematic state in which a wafer processing tape is bonded to a semiconductor wafer and a ring frame;
5 is a schematic view for explaining an apparatus and a method for bonding a wafer processing tape to a semiconductor wafer and a ring frame;
Fig. 6 is a plan view showing a form of a comparative example of Fig. 3; Fig.
7 is a view for explaining a sample peeling force measurement method in the embodiment.

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.

[Wafer processing tape (1)]

As shown in Fig. 1, the wafer 1 is wound on a core 6 as a core material in a roll shape, and is released from the core 6 at the time of use.

As shown in Fig. 2, the wafer processing tape 1 mainly comprises a release film 2, an adhesive layer 3, and an adhesive tape 4. As shown in Fig.

The peeling film 2 is peeled off from the wafer processing tape 1 and the semiconductor wafer W is peeled off from the exposed adhesive layer 3 in the bonding step for the semiconductor wafer W using the wafer processing tape 1. [ .

[Release film (2)]

As shown in Fig. 1, the release film 2 is formed in a rectangular band shape, and is formed so that one direction is sufficiently long. The release film (2) serves as a carrier film at the time of production and use.

As the peeling film 2, well-known materials such as a polyethylene terephthalate (PET) -based, a polyethylene-based film, and other peeled films can be used.

[Adhesive tape (4)]

(1) Configuration

As shown in Figs. 1 and 2, the adhesive tape 4 covers the adhesive layer 3 and is capable of contacting the peeling film 2 in the entire circumference of the adhesive layer 3.

The adhesive tape 4 has a label portion 4a corresponding to the shape of the ring frame 5 for dicing (see Fig. 4) and a peripheral portion 4b formed so as to surround the outer periphery of the label portion 4a. The adhesive tape 4 is pre-cut before use of the tape 1 for wafer processing, and the peripheral portion 4b is removed (the label portion 4a remains).

As shown in Fig. 2, the adhesive tape 4 has a constitution in which a pressure-sensitive adhesive layer 12 is formed on a base film 10.

As the adhesive tape 4, when the wafer W is diced, the pressure-sensitive adhesive layer 12 has sufficient peeling force so that the wafer W is not peeled off, and when the chip is picked up after dicing, It is sufficient that the pressure-sensitive adhesive layer 12 exhibits a low peeling force.

(2) The base film (10)

When the pressure-sensitive adhesive layer 12 contains a radiation-polymerizing component, it is preferable to select a base film 10 having good radiation transmittance.

Examples of the polymer that can be selected as the base film 10 include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene- Homopolymers or copolymers of? -Olefins such as ethylene-vinyl acetate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer and ionomer, or a mixture thereof, and engineering such as polyethylene terephthalate, polycarbonate and polymethyl methacrylate Thermoplastic elastomers such as plastics, polyurethanes, styrene-ethylene-butene or pentene-based copolymers, and polyamide-polyol copolymers.

The base film 10 may be a mixture of two or more kinds of materials selected from these groups, and may be a single layer or a layered structure.

(3) Pressure-sensitive adhesive layer (12)

The material used for the pressure-sensitive adhesive layer 12 is not particularly limited, but is preferably one containing a radiation-polymerizable component.

The radiation-polymerizable component is not particularly limited as long as it can be three-dimensionally reticularized by irradiation with radiation, and examples thereof include methyl acrylate, methyl methacrylate, ethyl acrylate, ethyl methacrylate, butyl acrylate, butyl methacrylate, 2-ethylhexyl acrylate, 2-ethylhexyl methacrylate, pentenyl acrylate, tetrahydrofurfuryl acrylate, tetrahydrofurfuryl methacrylate, diethylene glycol diacrylate, triethylene glycol diacrylate, But are not limited to, tetraethylene glycol diacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, polyethylene glycol diacrylate, trimethylolpropane diacrylate, trimethylolpropane triacrylate , Trimethylolpropane dimethacrylate, trimethylolpropane trimethacrylate Butanediol diacrylate, 1,6-hexanediol dimethacrylate, 1,6-hexanediol dimethacrylate, pentaerythritol triacrylate, 1,6-hexanediol dimethacrylate, Pentaerythritol tetramethacrylate, pentaerythritol tetramethacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, dipentaerythritol hexamethacrylate, dipentaerythritol triacrylate, Acrylate, 2-hydroxyethyl acrylate, 2-hydroxyethyl acrylate, 2-hydroxyethyl acrylate, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, Acryloyloxy-2-hydroxypropane, 1,2-methacryloyloxy-2-hydroxypropane, methylenebisacrylamide, N, N-dimethylacrylamide, N-methylolacrylamide, tris - hydroxyethyl) Triacrylate, the isocyanate compound of isocyanurate, may be mentioned photo-polymerizable copolymers having urethane (meth) acrylate compound, a diamine and an isocyanate compound, element methacrylate compound, in a side chain an ethylenically unsaturated group.

In addition, as the radiation-polymerizable component, a polyol compound such as polyester type or polyether type and a polyisocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, Acrylate or methacrylate having a hydroxyl group (for example, acrylate or methacrylate having a hydroxyl group) (for example, acrylate or methacrylate having a hydroxyl group) may be added to the terminal isocyanate urethane prepolymer obtained by reacting a diisocyanate, , 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate) And urethane acrylate oligomers obtained.

These radiation polymerizable compounds may be used alone or in combination of two or more.

[Adhesive Layer (3)]

As shown in Figs. 1 and 2, the adhesive layer 3 is interposed between the peeling film 2 and the adhesive tape 4. As shown in Fig. The adhesive layer 3 is in close contact with the pressure-sensitive adhesive layer 12 of the pressure-sensitive adhesive tape 4 and is peeled from the pressure-sensitive adhesive layer 12 in a state of being attached to the chip at the time of picking up the chip.

The material used for the adhesive layer 3 is not particularly limited and may be a known polyimide resin used for an adhesive, a polyamide resin, a polyetherimide resin, a polyamideimide resin, a polyester resin, a polyester imide resin, A polyether sulfone resin, a polyphenylene sulfide resin, a polyether ketone resin, a chlorinated polypropylene resin, an acrylic resin, a polyurethane resin, an epoxy resin, a silicone oligomer and the like can be used.

As shown in Fig. 3, the adhesive layer 3 shows a circular shape corresponding to the shape of the wafer W. As shown in Fig.

The adhesive layer 3 is partitioned into a predetermined portion (the joining portion 30) to which the wafer W is joined and an outer peripheral portion 32 on the outer side thereof.

The upper portion of the outer peripheral portion 32 of the adhesive layer 3 in Fig. 3 (a) serves as a starting point portion 34 for peeling from the peeling film 2.

3 (a), the outer peripheral portion 32 of the adhesive layer 3 has a larger peeling force with respect to the adhesive layer 12 over the entire area of the peripheral edge portion 32 than the adhesive portion 30.

Specifically,

(i) When the peeling force of the adhesive layer 30 on the adhesive layer 12 is less than 0.01 N and less than 0.4 N / inch, the peeling force on the adhesive layer 12 of the outer peripheral portion 32 is higher than the peeling force 30 or more, or 0.9 N / inch or more of the peel force of the pressure sensitive adhesive layer (12) on the pressure sensitive adhesive layer (12)

(ii) When the peeling force of the adhesive layer 30 on the pressure-sensitive adhesive layer 12 is 0.4 N / inch or more and less than 0.9 N / inch, the peel force of the peripheral portion 32 on the pressure- / inch or more.

As a method for increasing the peeling force, the following methods (a) to (e) may be employed.

The above methods (a) to (e) may be used alone or in combination of two or more thereof (combinations thereof may be suitably changed).

(a) Laser irradiation

A laser is irradiated to the outer peripheral portion 32 of the pressure-sensitive adhesive layer 3. [

The laser to be irradiated may be any laser type or wavelength used in the laser mark, and the type, wavelength, and irradiation time may be appropriately adjusted to such an extent that the laser can exert the effect without deteriorating the quality.

(b) Corona surface modification treatment

The outer peripheral portion 32 of the adhesive layer 3 is subjected to a corona surface modification treatment.

The corona surface modification treatment may be any method generally used in the surface modification treatment, and the type and treatment time may be appropriately adjusted to such an extent that the effect can be exhibited without impairing the quality.

(c) Heat treatment

The outer peripheral portion 32 of the adhesive layer 3 is subjected to heat treatment.

The heat treatment may be any heat treatment that is strong enough to adhere by heating, and for example, a heat ray is irradiated.

(d) Attaching the reinforcing tape

Another adhesive tape is adhered to the outer peripheral portion 32 (outer rim portion) of the adhesive layer 3 with the boundary between the adhesive layer 3 and the adhesive layer 12 of the adhesive tape 4 sandwiched therebetween .

As the adhesive tape for reinforcement, any adhesive tape generally used may be used.

(e) Reinforcement by adhesive

An adhesive is applied between the adhesive layer 3 and the adhesive layer 12 of the adhesive tape 4 in the outer peripheral portion 32 of the adhesive layer 3. [

The adhesive may be any adhesive generally used.

3 (b), the base portion 34 and the other portions 36 of the outer peripheral portion 32 of the adhesive layer 3 are bonded to the pressure-sensitive adhesive layer 12 more than the bonding portion 30, The peeling force to the adhesive layer 12 may be larger than the bonding portion 30 only at the starting point 34 as shown in Fig. 3 (c) .

In this case as well, the method (a) to (e) described above can be employed as a method for increasing the peeling force at the starting point 34 and the other portion 36 of the adhesive layer 3, (E) may be used alone or in combination of two or more thereof (combinations thereof may be suitably changed).

[Method of Using Wafer Processing Tape (1)] [

The wafer 1 for processing a wafer is attached to the semiconductor wafer W and the ring frame 5. [

Specifically, as shown in Fig. 5, the wafer 1 for processing a wafer is taken up from its roll, and the wafer 1 is taken out by the roller 100. As shown in Fig.

A peeling wedge 101 is provided in the pulling path of the wafer 1 for processing tape and only the peeling film 2 is peeled off with the leading end of the peeling wedge 101 as a turning point, And is wound around the roller 100.

An adsorption stage 102 is provided below the tip of the peeling wedge 101 and a semiconductor wafer W and a ring frame 5 are provided on the upper surface of the adsorption stage 102.

The adhesive layer 3 and the adhesive tape 4 from which the release film 2 has been peeled off by the peeling wedge 101 are guided over the semiconductor wafer W and bonded to the wafer W by the joining roller 103. [ do.

Thereafter, the semiconductor wafer W is diced in a state where the adhesive layer 3 and the adhesive tape 4 are attached to the semiconductor wafer W and the ring frame 5. Then,

Thereafter, the adhesive tape 4 is subjected to a hardening treatment such as irradiation with radiation to pick up the semiconductor wafer W (semiconductor chip) after dicing. The adhesive layer 3 is easily peeled from the adhesive layer 12 of the adhesive tape 4 and the adhesive layer 3 is peeled from the adhesive layer 12 3) are attached.

The adhesive layer 3 attached to the back surface of the semiconductor chip functions as a die bonding film when the semiconductor chip is thereafter bonded to a lead frame, a package substrate, or another semiconductor chip.

<Examples>

(1) Production of a sample

(1.1) Preparation of base film and formation of pressure-sensitive adhesive layer

A polyolefin-based substrate film Z (thickness: 100 mu m) was prepared as a base film.

On the other hand, 100 parts of an acrylic polymer X having a radiation-polymerizable carbon-carbon double bond (molecular weight 700,000 Mw, Tg = -65 ° C) or Y (molecular weight 200,000 Mw, Tg = -20 ° C), 100 parts of polyisocyanate- (2, 2-dimethoxy-2-phenylacetophenone) was added to the above base film, and the resulting solution was coated on the base film so that the dry film thickness became 10 m, And dried to form "pressure-sensitive adhesive layers A to F" on the base film.

The type of polymer (X or Y) of the pressure-sensitive adhesive layers A to F, the blending ratio of the curing agent and the photopolymerization initiator are shown in Table 1 below.

Thereafter, the base film on which the pressure-sensitive adhesive layers A to F were formed was subjected to free cutting to produce an adhesive tape (completed).

Figure 112011038176214-pat00001

(1.2) Formation of adhesive layer

100 parts of an acrylic copolymer, 100 parts of a cresol novolak type epoxy resin, and 10 parts of a xylene novolak type phenol resin were mixed with 5 parts of 2-phenylimidazole and 0.5 part of xylene diamine as an epoxy curing agent and the solution was mixed with polyethylene terephthalate (PET) film, and then dried at 110 DEG C for 2 minutes to form an adhesive layer on the PET film.

Thereafter, the laser beam irradiation, the corona surface modification treatment, the heat treatment, and the reinforcing tape described in the following (1.2.1) to (1.2.5) are applied to the outer circumferential portion of the adhesive layer and the adhesive layer of the semiconductor wafer, Or an application of an adhesive.

The treated areas and treatment methods are shown in Tables 2 and 3 below.

In Comparative Examples 1 and 2, no treatment was performed on the outer peripheral portion of the adhesive layer as shown in Fig. 6 (a).

In Comparative Examples 3, 5, 7, 8, 10 and 12 to 14, as shown in Figs. 6B and 6C, a part of the outer periphery of the adhesive layer, Any of the above-described treatments was carried out on the portion excluding the starting point of peeling (see the hatched portion).

(1.2.1) Laser irradiation

CO 2 Using a laser marker, the surface of the adhesive layer was subjected to laser irradiation.

(1.2.2) Corona surface modification treatment

Corona surface modification treatment was performed on the surface of the adhesive layer using a corona surface modification processor.

(1.2.3) Heat treatment

The surface of the adhesive layer was irradiated with a heat ray and subjected to heat treatment.

(1.2.4) With reinforced tape

A reinforcing adhesive tape was attached to the outer edge of the adhesive layer so that the boundary between the adhesive tape and the adhesive layer was interposed therebetween.

(1.2.5) Application of adhesive

An adhesive was applied between the adhesive layer and the adhesive layer of the adhesive tape in the outer peripheral portion of the adhesive layer, and the adhesive layer and the adhesive tape were adhered with an adhesive.

(1.3) Formation of Wafer Processing Tape

The adhesive layer was punched in a shape larger than the wafer size, and an adhesive layer having a thickness of 10 占 퐉 was bonded to the pressure-sensitive adhesive layer of the adhesive tape to form a wafer processing tape (completed). The PET-based separator peeling film used in the step of forming the adhesive layer is provided on the wafer processing tape.

(2) Evaluation of sample

(2.1) Measurement method of peel force

To each sample, a release tape (PET) was peeled off. To prevent elongation of the adhesive layer during peeling test, a support tape (Orient Spot tape for goggles made by Sekisui Chemical Co., Ltd., 38 mm width) was bonded on a flat glass plate using a manual bonding roller (2 kg) to obtain a laminate of an adhesive tape, an adhesive layer and a support tape.

Thereafter, as shown in Fig. 7, the laminate was subjected to a heat treatment to remove the adhesive layer from the peeling film (PET film) The test piece was cut into a 25 mm rectangle.

Thereafter, the pressure-sensitive adhesive layer and the adhesive layer were peeled from each other with the peeling angle of 180 degrees and the peeling speed of 300 mm / min (min) toward the direction of the arrow in Fig. 7, that is, from the center of the adhesive layer toward the outer periphery. Thus, the peeling force at the portion corresponding to the pre-bonding portion of the semiconductor wafer and the portion corresponding to the starting portion of peeling were respectively determined. The measurement results are shown in Tables 2 to 6.

(2.2) Bonding test

Silicon wafers each having a thickness of 50 mu m and a diameter of 200 mm were bonded to each sample of Examples and Comparative Examples at a heating temperature of 70 DEG C and a bonding speed of 12 mm / s by the apparatus and method shown in Fig.

The bonding operation was carried out ten times to confirm whether or not the adhesive layer was bonded to the silicon wafer in a partially rolled state from the adhesive tape. The test results are shown in Tables 2 to 6 below.

A case where the adhesive layer was not adhered to the adhesive tape at all times after 10 times of bonding work and was attached to the adhesive tape was evaluated as &quot; Good (good bonding) &quot;, and when the adhesive layer was partially rolled up at least once from the adhesive tape Was regarded as &quot; x (bonding failure) &quot; and evaluated.

(2.3) Pickup test

A silicon wafer having a thickness of 50 mu m was heat bonded to each sample of Examples and Comparative Examples at 70 DEG C for 10 seconds, and then diced into 10 mm x 10 mm.

Thereafter, the pressure sensitive adhesive layer was irradiated with ultraviolet rays at 200 mJ / cm 2 by air-cooled high-pressure mercury lamp (80 W / cm, irradiation distance 10 cm), and then 50 chips of the central part of the silicon wafer were picked up by a pickup device (trade name: CAP- 300II) was carried out. The test results are shown in Tables 2 to 6.

A case in which all 50 chips were successfully picked up was evaluated as &quot; &quot;, and a case where even one of the 50 chips failed to pick up was evaluated as &quot; x &quot;

Figure 112012016864529-pat00014

Figure 112012016864529-pat00015

Figure 112011038176214-pat00004

Figure 112011038176214-pat00005

Figure 112011038176214-pat00006

(3) Theorem

As shown in Tables 2 to 6, in Examples 1 to 12, the results of both the bonding test and the pick-up test were good, and in the portion including the starting point of peeling from the peripheral portion of the adhesive layer and the peeling film, It is possible to prevent peeling of the adhesive layer from the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape, and no pickup error is caused. Further, in Comparative Example 1, since the area to be bonded of the semiconductor wafer also had a high peeling force, the bonding to the silicon wafer could be satisfactorily performed, but the number of pick-up mistakes was large.

1: Wafer processing tape
2: peeling film
3: Adhesive layer
4: Adhesive tape
4a: Label section
4b: peripheral portion
6: Core
10: substrate film
12: pressure-sensitive adhesive layer
100: take-up roller
101: peeling wedge
102: Adsorption stage
103:
A: the pull-out direction of the release film
B: peeling direction of the peeling film

Claims (9)

delete A peeling film,
An adhesive layer partially formed on the release film,
An adhesive tape comprising a substrate film and a pressure-sensitive adhesive layer formed thereon, wherein the adhesive tape is laminated on the adhesive layer so as to be in contact with the release film around the adhesive layer,
Wherein a peeling force between a portion of the outer circumferential portion of the adhesive layer and a portion of the portion including the starting point that is a starting point of peeling from the peeling film at the time of bonding the semiconductor wafer to the pressure sensitive adhesive layer, Is larger than the peeling force between the adhesive layer and the intended adhesive bonding portion of the intended bonding portion,
And the peeling force of a part of the outer peripheral portion is 0.9 N / inch or more. A peeling film,
An adhesive layer partially formed on the release film,
An adhesive tape comprising a substrate film and a pressure-sensitive adhesive layer formed thereon, wherein the adhesive tape is laminated on the adhesive layer so as to be in contact with the release film around the adhesive layer,
The peeling force between the outer periphery of the adhesive layer and the starting point portion serving as a starting point of peeling from the peeling film at the time of bonding of the semiconductor wafer to the peeling strength between the peeling film and the peeling- Sensitive adhesive layer is greater than the peeling force between the pressure-
Wherein the peeling force of the starting point portion is 0.9 N / inch or more. delete The wafer processing tape according to claim 2 or 3, wherein part of the outer peripheral portion or the starting point portion is laser-irradiated. The wafer processing tape according to claim 2 or 3, wherein a part of the outer peripheral portion or the starting point portion is subjected to a corona surface modification treatment. The wafer processing tape according to claim 2 or 3, wherein a part of the outer peripheral portion or the starting point portion is subjected to heat treatment. The tape for wafer processing according to claim 2 or 3, wherein a reinforcing tape is attached between the adhesive layer and the pressure-sensitive adhesive layer in a part of the outer peripheral portion or the starting point portion. The tape for wafer processing according to claim 2 or 3, wherein an adhesive is applied between the adhesive layer and the pressure-sensitive adhesive layer at a portion of the outer peripheral portion or the starting point portion.
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