KR101319743B1 - 포토마스크 기판, 포토마스크 기판의 제조 방법, 포토마스크의 제조 방법 및 패턴 전사 방법 - Google Patents

포토마스크 기판, 포토마스크 기판의 제조 방법, 포토마스크의 제조 방법 및 패턴 전사 방법 Download PDF

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KR101319743B1
KR101319743B1 KR1020120061391A KR20120061391A KR101319743B1 KR 101319743 B1 KR101319743 B1 KR 101319743B1 KR 1020120061391 A KR1020120061391 A KR 1020120061391A KR 20120061391 A KR20120061391 A KR 20120061391A KR 101319743 B1 KR101319743 B1 KR 101319743B1
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South Korea
Prior art keywords
gap
photomask
proximity
exposure apparatus
substrate
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Korean (ko)
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KR20120137279A (ko
Inventor
히사미 이께베
도시유끼 다나까
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020120061391A 2011-06-10 2012-06-08 포토마스크 기판, 포토마스크 기판의 제조 방법, 포토마스크의 제조 방법 및 패턴 전사 방법 Active KR101319743B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011130239A JP5497693B2 (ja) 2011-06-10 2011-06-10 フォトマスク基板、フォトマスク基板の製造方法、フォトマスクの製造方法、及びパターン転写方法
JPJP-P-2011-130239 2011-06-10

Publications (2)

Publication Number Publication Date
KR20120137279A KR20120137279A (ko) 2012-12-20
KR101319743B1 true KR101319743B1 (ko) 2013-10-17

Family

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KR1020120061391A Active KR101319743B1 (ko) 2011-06-10 2012-06-08 포토마스크 기판, 포토마스크 기판의 제조 방법, 포토마스크의 제조 방법 및 패턴 전사 방법

Country Status (4)

Country Link
JP (1) JP5497693B2 (https=)
KR (1) KR101319743B1 (https=)
CN (1) CN102819182B (https=)
TW (1) TWI506355B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6522277B2 (ja) * 2013-11-19 2019-05-29 Hoya株式会社 フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
JP6415186B2 (ja) * 2014-08-27 2018-10-31 キヤノン株式会社 評価用マスク、評価方法、露光装置及び物品の製造方法
JP2018508835A (ja) * 2015-01-05 2018-03-29 マーシュピアル ホールディングス エルエルシー マルチトーンレベルフォトマスク｛ｍｕｌｔｉ−ｔｏｎｅ ａｍｐｌｉｔｕｄｅ ｐｈｏｔｏｍａｓｋ｝
JP6553887B2 (ja) * 2015-02-19 2019-07-31 Hoya株式会社 フォトマスクの製造方法、描画装置、フォトマスクの検査方法、及び表示装置の製造方法
JP6556673B2 (ja) * 2016-07-26 2019-08-07 Hoya株式会社 フォトマスクの製造方法、描画装置、表示装置の製造方法、フォトマスク基板の検査方法、及びフォトマスク基板の検査装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030080190A (ko) * 2002-01-31 2003-10-11 신에쓰 가가꾸 고교 가부시끼가이샤 대형 기판 및 그 제조 방법
KR20060132497A (ko) * 2005-06-17 2006-12-21 신에쓰 가가꾸 고교 가부시끼가이샤 포토마스크용 대형 유리 기판 및 그의 제조 방법, 컴퓨터판독 가능한 기록 매체, 및 마더 글래스의 노광 방법
JP2010054933A (ja) 2008-08-29 2010-03-11 Toshiba Corp 露光装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2671338B2 (ja) * 1987-12-25 1997-10-29 株式会社ニコン 露光方法及び基板の姿勢制御方法
JPH02251851A (ja) * 1989-03-24 1990-10-09 Seiko Instr Inc フォトマスク
JP2877190B2 (ja) * 1996-01-09 1999-03-31 日本電気株式会社 Ｘ線マスク及びその製造方法
US7026081B2 (en) * 2001-09-28 2006-04-11 Asml Masktools B.V. Optical proximity correction method utilizing phase-edges as sub-resolution assist features
TWI329779B (en) * 2003-07-25 2010-09-01 Shinetsu Chemical Co Photomask blank substrate, photomask blank and photomask
JP4657591B2 (ja) * 2003-07-25 2011-03-23 信越化学工業株式会社 フォトマスクブランク用基板の選定方法
KR100613461B1 (ko) * 2005-06-29 2006-08-17 주식회사 하이닉스반도체 이중노광기술을 이용한 이중노광방법과 이를 위한포토마스크
JP2007199434A (ja) * 2006-01-27 2007-08-09 Dainippon Printing Co Ltd プロキシミティ方式の露光方法とそれに用いられるマスク基板、および該マスク基板の作製方法
JP4978626B2 (ja) * 2006-12-15 2012-07-18 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の機能膜付基板

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030080190A (ko) * 2002-01-31 2003-10-11 신에쓰 가가꾸 고교 가부시끼가이샤 대형 기판 및 그 제조 방법
KR20060132497A (ko) * 2005-06-17 2006-12-21 신에쓰 가가꾸 고교 가부시끼가이샤 포토마스크용 대형 유리 기판 및 그의 제조 방법, 컴퓨터판독 가능한 기록 매체, 및 마더 글래스의 노광 방법
JP2010054933A (ja) 2008-08-29 2010-03-11 Toshiba Corp 露光装置

Also Published As

Publication number Publication date
JP2012256798A (ja) 2012-12-27
KR20120137279A (ko) 2012-12-20
JP5497693B2 (ja) 2014-05-21
TWI506355B (zh) 2015-11-01
CN102819182A (zh) 2012-12-12
CN102819182B (zh) 2014-07-23
TW201310164A (zh) 2013-03-01

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