CN102819182B - 光掩模基板及制造方法、光掩模制造方法和图案转印方法 - Google Patents

光掩模基板及制造方法、光掩模制造方法和图案转印方法 Download PDF

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Publication number
CN102819182B
CN102819182B CN201210187324.1A CN201210187324A CN102819182B CN 102819182 B CN102819182 B CN 102819182B CN 201210187324 A CN201210187324 A CN 201210187324A CN 102819182 B CN102819182 B CN 102819182B
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China
Prior art keywords
photomask
gap
proximity
substrate
variation
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CN201210187324.1A
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English (en)
Chinese (zh)
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CN102819182A (zh
Inventor
池边寿美
田中敏幸
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Hoya Corp
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Hoya Corp
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
CN201210187324.1A 2011-06-10 2012-06-07 光掩模基板及制造方法、光掩模制造方法和图案转印方法 Active CN102819182B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011130239A JP5497693B2 (ja) 2011-06-10 2011-06-10 フォトマスク基板、フォトマスク基板の製造方法、フォトマスクの製造方法、及びパターン転写方法
JP2011-130239 2011-06-10

Publications (2)

Publication Number Publication Date
CN102819182A CN102819182A (zh) 2012-12-12
CN102819182B true CN102819182B (zh) 2014-07-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210187324.1A Active CN102819182B (zh) 2011-06-10 2012-06-07 光掩模基板及制造方法、光掩模制造方法和图案转印方法

Country Status (4)

Country Link
JP (1) JP5497693B2 (https=)
KR (1) KR101319743B1 (https=)
CN (1) CN102819182B (https=)
TW (1) TWI506355B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6522277B2 (ja) * 2013-11-19 2019-05-29 Hoya株式会社 フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
JP6415186B2 (ja) * 2014-08-27 2018-10-31 キヤノン株式会社 評価用マスク、評価方法、露光装置及び物品の製造方法
JP2018508835A (ja) * 2015-01-05 2018-03-29 マーシュピアル ホールディングス エルエルシー マルチトーンレベルフォトマスク｛ｍｕｌｔｉ−ｔｏｎｅ ａｍｐｌｉｔｕｄｅ ｐｈｏｔｏｍａｓｋ｝
JP6553887B2 (ja) * 2015-02-19 2019-07-31 Hoya株式会社 フォトマスクの製造方法、描画装置、フォトマスクの検査方法、及び表示装置の製造方法
JP6556673B2 (ja) * 2016-07-26 2019-08-07 Hoya株式会社 フォトマスクの製造方法、描画装置、表示装置の製造方法、フォトマスク基板の検査方法、及びフォトマスク基板の検査装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2671338B2 (ja) * 1987-12-25 1997-10-29 株式会社ニコン 露光方法及び基板の姿勢制御方法
JPH02251851A (ja) * 1989-03-24 1990-10-09 Seiko Instr Inc フォトマスク
JP2877190B2 (ja) * 1996-01-09 1999-03-31 日本電気株式会社 Ｘ線マスク及びその製造方法
US7026081B2 (en) * 2001-09-28 2006-04-11 Asml Masktools B.V. Optical proximity correction method utilizing phase-edges as sub-resolution assist features
TWI250133B (en) * 2002-01-31 2006-03-01 Shinetsu Chemical Co Large-sized substrate and method of producing the same
TWI329779B (en) * 2003-07-25 2010-09-01 Shinetsu Chemical Co Photomask blank substrate, photomask blank and photomask
JP4657591B2 (ja) * 2003-07-25 2011-03-23 信越化学工業株式会社 フォトマスクブランク用基板の選定方法
JP4362732B2 (ja) * 2005-06-17 2009-11-11 信越化学工業株式会社 フォトマスク用大型ガラス基板及びその製造方法、コンピュータ読み取り可能な記録媒体、並びにマザーガラスの露光方法
KR100613461B1 (ko) * 2005-06-29 2006-08-17 주식회사 하이닉스반도체 이중노광기술을 이용한 이중노광방법과 이를 위한포토마스크
JP2007199434A (ja) * 2006-01-27 2007-08-09 Dainippon Printing Co Ltd プロキシミティ方式の露光方法とそれに用いられるマスク基板、および該マスク基板の作製方法
JP4978626B2 (ja) * 2006-12-15 2012-07-18 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の機能膜付基板
JP2010054933A (ja) 2008-08-29 2010-03-11 Toshiba Corp 露光装置

Also Published As

Publication number Publication date
JP2012256798A (ja) 2012-12-27
KR20120137279A (ko) 2012-12-20
JP5497693B2 (ja) 2014-05-21
KR101319743B1 (ko) 2013-10-17
TWI506355B (zh) 2015-11-01
CN102819182A (zh) 2012-12-12
TW201310164A (zh) 2013-03-01

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Address after: Japan Tokyo 160-8347 Shinjuku Shinjuku six chome 10 No. 1

Patentee after: HOYA Corporation

Address before: Tokyo, Japan, Japan

Patentee before: HOYA Corporation