KR101288408B1 - 플래시 메모리 시스템의 고속 웨이크-업을 용이하게 하는 방법과 시스템 - Google Patents

플래시 메모리 시스템의 고속 웨이크-업을 용이하게 하는 방법과 시스템 Download PDF

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KR101288408B1
KR101288408B1 KR1020097015437A KR20097015437A KR101288408B1 KR 101288408 B1 KR101288408 B1 KR 101288408B1 KR 1020097015437 A KR1020097015437 A KR 1020097015437A KR 20097015437 A KR20097015437 A KR 20097015437A KR 101288408 B1 KR101288408 B1 KR 101288408B1
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memory
management table
copy
block
data structure
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KR20090106399A (ko
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메나헴 레저
아프라함 메이르
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샌디스크 아이엘 엘티디
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
  • Memory System (AREA)
KR1020097015437A 2007-01-18 2008-01-16 플래시 메모리 시스템의 고속 웨이크-업을 용이하게 하는 방법과 시스템 Expired - Fee Related KR101288408B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US88541207P 2007-01-18 2007-01-18
US60/885,412 2007-01-18
US11/808,452 2007-06-11
US11/808,452 US7721040B2 (en) 2007-01-18 2007-06-11 Method and system for facilitating fast wake-up of a flash memory system
US11/808,451 US7769945B2 (en) 2007-01-18 2007-06-11 Method and system for facilitating fast wake-up of a flash memory system
US11/808,451 2007-06-11
PCT/IL2008/000062 WO2008087634A1 (en) 2007-01-18 2008-01-16 A method and system for facilitating fast wake-up of a flash memory system

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KR20090106399A KR20090106399A (ko) 2009-10-08
KR101288408B1 true KR101288408B1 (ko) 2013-07-22

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US (3) US7721040B2 (enExample)
JP (2) JP5351046B2 (enExample)
KR (1) KR101288408B1 (enExample)
DE (1) DE112008000180T5 (enExample)
TW (1) TWI388983B (enExample)

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JP2010517131A (ja) 2010-05-20
TW200839516A (en) 2008-10-01
JP5351046B2 (ja) 2013-11-27
US8135904B2 (en) 2012-03-13
KR20090106399A (ko) 2009-10-08
US7769945B2 (en) 2010-08-03
JP2013211056A (ja) 2013-10-10
US20080177936A1 (en) 2008-07-24
TWI388983B (zh) 2013-03-11
US20080177935A1 (en) 2008-07-24
DE112008000180T5 (de) 2009-12-03
US7721040B2 (en) 2010-05-18
JP5663060B2 (ja) 2015-02-04
US20100262799A1 (en) 2010-10-14

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