KR101286817B1 - Cleaning agent or rinsing agent for lithography - Google Patents

Abstract

According to the present invention, there is provided a cleaning or rinsing agent for lithography that is excellent in solubility and peelability of resists and antireflection films.

The cleaning or rinsing agent for lithography may be one or more selected from the group consisting of (a1) propylene glycol-1-alkyl ether acetate, (a2) 1,3-butanediol-3-alkyl ether acetate and (a3) acetic acid alkyl ester When a solvent A, at least one solvent B selected from the group consisting of (b1) propylene glycol-1-alkyl ether and (b2) 1,3-butanediol-3-alkyl ether, is mixed with water of equal capacity To form a homogeneous solution.

Cleaning agent for lithography, rinsing agent for lithography

Description

Cleaning or rinsing agents for lithography {CLEANING AGENT OR RINSING AGENT FOR LITHOGRAPHY}

[Document 1] Japanese Patent Application Laid-Open No. 4-49938

[Document 2] Japanese Unexamined Patent Publication No. 6-324499

[Document 3] Japanese Unexamined Patent Publication No. 2001-117242

[Document 4] Japanese Unexamined Patent Publication No. 2001-117241

[Patent 5] Japanese Unexamined Patent Publication No. 10-186680

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a lithography cleaner or rinse agent useful for dissolving or peeling away uncured and uncured unnecessary resists, antireflection films, and the like from substrates or resist coating devices in integrated circuit devices, color filters, liquid crystal display devices, and the like. .

BACKGROUND ART Lithographic techniques have conventionally been used for the manufacture of integrated circuit devices, color filters, liquid crystal display devices and the like. In the manufacture of integrated circuit devices using lithography techniques, for example, after forming an antireflection film on a substrate as necessary, a positive or negative resist is applied to remove the solvent by baking, and then onto the resist film. An antireflection film is formed as necessary, and is exposed and developed by various radiations such as ultraviolet rays, far ultraviolet rays, electron beams, X-rays, and the like to form a resist pattern.

As the coating of the resist, various known methods such as spin coating, roll coating, reverse roll coating, cast coating, doctor coating, dip coating, and the like are employed. For example, in the manufacture of integrated circuit devices, spin is used as a resist coating method. Coating methods are mainly used. In the spin coating method, a resist solution is dropped on the substrate, and the dropped resist solution is plied in the outer circumferential direction by the rotation of the substrate, and the excess resist solution is scattered away from the outer circumference of the substrate to form a resist film having a desired film thickness. do.

However, at this time, a part of the resist solution is rolled up to the back side of the substrate, or at the outer peripheral edge of the substrate, there is a drawback that a so-called bead formation, in which the resist solution remains thicker than other parts, is formed. It is necessary to remove or remove the beads. This is not limited to the manufacture of integrated circuit elements, and the same also applies to the manufacture of color filters, liquid crystal display elements and the like. Also, in the coating methods other than the spin coating method, the resist may adhere to unnecessary portions as in the spin coating method.

In addition, in the case of an integrated circuit element having an antireflection film between the substrate and the resist film, it is necessary to remove the antireflection film after the pattern is formed. Since the resist solution also adheres to the coating device, it is also necessary to clean the coating device in continuous use.

As examples of these solutions, examples of Japanese Patent Application Laid-Open No. 4-49938 disclose an example of peeling a photoresist layer using a release agent containing a 1: 1 mixture of propylene glycol methyl ether and propylene glycol methyl ether acetate. have.

Japanese Patent Laid-Open No. 6-324499 discloses a resist cleaning removal solvent using β-type propylene glycol monomethyl ether acetate as a solvent cleaning removal solvent having improved resin solubility and initiator solubility.

Japanese Unexamined Patent Application Publication No. 2001-117242 discloses an example of removing unnecessary resist by using 1,3-propanediol methyl ether or 1,3-propanediol methyl ether acetate as a cleaning agent. Japanese Unexamined Patent Application Publication No. 2001-117241 discloses an example in which an unnecessary resist is removed by using a mixed solution of 1,3-propanediol methyl ether, 1,3-propanediol methyl ether acetate and water as a rinse liquid. In addition, Japanese Patent Laid-Open No. Hei 10-186680 discloses a cleaning agent having a fire, handling safety and a rinse liquid using propylene glycol alkyl ether and propylene glycol alkyl ether acetate.

However, the solvent and the solvent composition described above cannot be said to be practically sufficient in that they have insufficient solubility and peelability and require a relatively long dissolution time.

SUMMARY OF THE INVENTION An object of the present invention is to provide a lithographic cleaning agent or rinsing agent having good solubility and peelability not only for a resist or an antireflection film formed of an organic solvent solution, but also for an antireflection film formed of an aqueous solution, which does not have the above-mentioned drawbacks. There is.

Another object of the present invention is to provide a cleaning or rinsing agent for lithography in which the risk of fire is improved and handling is excellent in addition to the above characteristics.

As a result of intensive studies, the present inventors have found that the above object can be achieved by an organic solvent mixed solution having a specific organic solvent combination and having a specific characteristic, or a mixture of them and water.

That is, the present invention provides at least one solvent A selected from the group consisting of (a1) propylene glycol-1-alkyl ether acetate, (a2) 1,3-butanediol-3-alkyl ether acetate and (a3) acetic acid alkyl ester, A homogeneous solution containing at least one solvent B selected from the group consisting of (b1) propylene glycol-1-alkyl ether and (b2) 1,3-butanediol-3-alkyl ether, and mixed with water of equal capacity It provides a cleaning or rinsing agent for lithography that can form a.

The lithography cleaning or rinsing agent is, for example, a lithography comprising (i) propylene glycol-1-alkyl ether acetate (a1) and solvent B in the ratio of the former / the latter (weight ratio) = 1/99 to 75/25. Solvent or rinse agent, (ii) a cleaner for lithography comprising 1,3-butanediol-3-alkylether acetate (a2) and solvent B in the ratio of the former / the latter (weight ratio) = 1/99 to 55/45 or Rinse agent, (iii) The lithographic cleaning agent or rinse agent which contains acetic acid alkyl ester (a3) and solvent B in the ratio of the former / the latter (weight ratio) = 1/99-15/85 is contained.

As propylene glycol-1-alkyl ether acetate (a1), a 1, 2- propylene glycol-1- alkyl ether acetate is mentioned, for example. Propylene glycol-1-alkyl ether acetate (a1), 1,3-butanediol-3-alkyl ether acetate (a2), propylene glycol-1-alkyl ether (b1) or 1,3-butanediol-3-alkyl ether (b2 As an alkyl group in ()), a methyl group etc. are mentioned, for example. As acetic acid alkyl ester (a3), butyl acetate is mentioned, for example.

In addition to the solvent A and the solvent B, the said washing | cleaning agent or rinse for lithography may further contain water.

In addition, "propylene glycol" refers to alpha propylene glycol (1,2-propylene glycol = 1,2-propanediol) and beta propylene glycol (1,3-propanediol) unless otherwise specified in the present specification. Used in the sense of inclusion.

BEST MODE FOR CARRYING OUT THE INVENTION [

The cleaning or rinsing agent for lithography of the present invention is 1 selected from the group consisting of (a1) propylene glycol-1-alkyl ether acetate, (a2) 1,3-butanediol-3-alkyl ether acetate and (a3) acetic acid alkyl ester. At least one solvent A, and at least one solvent B selected from the group consisting of (b1) propylene glycol-1-alkyl ether and (b2) 1,3-butanediol-3-alkyl ether. Solvent A and solvent B can be used in combination of 2 or more type, respectively.

Propylene glycol-1-alkyl ether acetate (a1), 1,3-butanediol-3-alkyl ether acetate (a2), propylene glycol-1-alkyl ether (b1), 1,3-butanediol-3-alkyl ether (b2 Examples of the alkyl group in the above) include linear or branched alkyl groups having 1 to 6 carbon atoms such as methyl, ethyl, propyl, isopropyl, butyl, isobutyl, s-butyl, t-butyl, pentyl, and hexyl groups. Can be. Among these, a methyl group is especially preferable.

As a typical example of propylene glycol-1-alkyl ether acetate (a1), for example, propylene glycol-1-methyl ether acetate, propylene glycol-1-ethyl ether acetate, propylene glycol-1-propyl ether acetate, propylene glycol-1 -butyl ether, and the like, propylene glycol -1-C _{1 -6} alkyl ether acetates such as acetate. Among them, α-type propylene glycol-1-alkyl ether acetate (1,2-propylene glycol-1-alkyl ether acetate) such as α-type propylene glycol-1-methyl acetate (1,2-propylene glycol-1-methyl ether acetate) Is preferred.

As a representative example of 1,3-butanediol-3-alkylether acetate (a2), for example, 1,3-butanediol-3-methylether acetate, 1,3-butanediol-3-ethylether acetate, 1,3- Butanediol-3-propyl ether acetate, 1, 3- butanediol-3- butyl ether acetate, etc. are mentioned. Among these, 1,3-butanediol-3-methyl ether acetate is especially preferable.

Examples of the alkyl group in the acetic acid alkyl ester (a3) include straight chains having 1 to 6 carbon atoms such as methyl, ethyl, propyl, isopropyl, butyl, isobutyl, s-butyl, t-butyl, pentyl and hexyl groups, or the like. A branched alkyl group is mentioned. As typical examples of the acetic acid alkyl ester (a3), for example, propyl acetate, butyl acetate, amyl acetate, and the like can be cited. Among these, butyl acetate is particularly preferable.

As a typical example of propylene glycol-1-alkyl ether (b1), for example, propylene glycol-1-methyl ether, propylene glycol-1-ethyl ether, propylene glycol-1-propyl ether, propylene glycol-1-butyl ether, etc. of the like can be given propylene glycol -1-C _{1 -6} alkyl ether. Among them, α-type propylene glycol-1-methyl ether (1,2-propylene glycol-1-methyl ether) and β-type propylene glycol-1-methyl ether (1,3-propanediol-1-methyl ether) are preferable. .

As a representative example of 1,3-butanediol-3-alkylether (b2), for example, 1,3-butanediol-3-methylether, 1,3-butanediol-3-ethylether, 1,3-butanediol-3 -Propyl ether, 1,3-butanediol-3-butyl ether, etc. are mentioned. Among these, 1, 3- butanediol-3-methyl ether is especially preferable.

As a preferable combination of the solvent A and the solvent B, (alpha), such as the combination of alpha type propylene glycol-1-methyl ether acetate (1, 2-propylene glycol-1- methyl ether acetate), and 1, 3- butanediol-3- methyl ether A combination of a type propylene glycol-1-alkyl ether acetate (1,2-propylene glycol-1-alkyl ether acetate) and 1,3-butanediol-3-alkyl ether; Combination of 1,3-butanediol-3-alkylether acetate and 1,3-butanediol-3-alkyl ether, such as a combination of 1,3-butanediol-3-methyl ether acetate and 1,3-butanediol-3-methyl ether ; Combinations of acetic acid alkyl esters such as a combination of butyl acetate and 1,3-butanediol-3-methyl ether and 1,3-butanediol-3-alkyl ether; 1,3-butanediol-3-alkyl ether acetate, such as a combination of 1,3-butanediol-3-methyl ether acetate and α-type propylene glycol-1-methyl ether (1,2-propylene glycol-1-methyl ether) a combination of an α-type propylene glycol-1-alkyl ether (1,2-propylene glycol-1-alkyl ether); 1,3-butanediol-3-alkyl ether acetate, such as a combination of 1,3-butanediol-3-methyl ether acetate and β-type propylene glycol-1-methyl ether (1,3-propanediol-1-methyl ether) and combinations of β-type propylene glycol-1-alkyl ethers (1,3-propanediol-1-alkyl ethers).

The mixing ratio of the solvent A and the solvent B should just be a ratio which can form a homogeneous solution, when mixing the solution after mixing with water of equal capacity (for example, in 30-35 degreeC), and a kind of solvent Select according to. Thus, when mixed with an equal amount of water, the mixed solvent which has the characteristic of forming a homogeneous solution is very excellent in the solubility and peelability of a resist or an antireflection film. Moreover, since it dissolves very easily with water and forms a homogeneous solution, it can be used as a detergent and a rinse agent (finishing agent used for final finishing) excellent in handleability and safety by mixing with water at an appropriate ratio.

When using propylene glycol-1-alkyl ether acetate (a1) (for example, (alpha) type propylene glycol-1- alkyl ether acetate etc., such as alpha type propylene glycol-1-methyl ether acetate) as the solvent A, the said propylene The ratio of glycol-1-alkyl ether acetate (a1) and solvent B (e.g., 1,3-butanediol-3-alkyl ether such as 1,3-butanediol-3-methyl ether) is, for example, the former. / Latter (weight ratio) = 1/99 to 75/25, preferably the former / latter (weight ratio) = 10/90 to 70/30.

When using 1, 3- butanediol-3- alkyl ether acetate (a2) (for example, 1, 3- butanediol-3- methyl ether acetate etc.) as solvent A, the said 1, 3- butanediol-3- The ratio of the alkyl ether acetate (a2) and the solvent B is preferably in the range of the former / the latter (weight ratio) = 1/99 to 55/45. In particular, 1,3-butanediol-3-alkylether (for example, 1,3-butanediol-3-methylether etc.) or (beta) -type propylene glycol-1-alkylether (for example, (beta) -type propylene as a solvent B) In the case of using glycol-1-methyl ether), 1,3-butanediol-3-alkylether acetate (a2) and 1,3-butanediol-3-alkylether or β-type propylene glycol-1-alkylether As for a ratio, the former / the latter (weight ratio) = 1/99-50/50 are more preferable. Moreover, when using alpha type propylene glycol 1-alkyl ether (for example, alpha type propylene glycol 1-methyl ether etc.) as a solvent B, 1, 3- butanediol-3- alkyl ether acetate (a2) As for the ratio of an alpha-type propylene glycol-1-alkyl ether, the former / the latter (weight ratio) = 1 / 99-45 / 55 is more preferable, and 1 / 99-40 / 60 is especially preferable.

In addition, when using acetic acid alkyl ester (a3) (for example, butyl acetate etc.) as solvent A, the ratio of the said acetic acid alkyl ester (a3) and solvent B is the former / latter (weight ratio) = 1/99 to 15/85, preferably 1/99 to 10/90.

The cleaning or rinsing agent for lithography of the present invention is used as an organic solvent other than Solvent A and Solvent B (for example, as a solvent or rinse liquid such as a conventional resist or an antireflection film) within a range that does not impair the solubility in water. Or a soluble organic solvent). The total content of the solvent A and the solvent B in the cleaning or rinsing agent for lithography of the present invention is preferably 40% by weight or more, more preferably 60% by weight or more with respect to the entire organic solvent constituting the cleaning agent or rinsing agent. More preferably, it is 80 weight% or more (especially 90 weight% or more). The organic solvent powder of the cleaning or rinsing agent for lithography of the present invention may consist essentially of solvent A and solvent B only.

Although the mixed liquid containing the said solvent A and the solvent B can be used as a washing | cleaning agent or a rinsing agent as it is, it can also be used as a washing | cleaning agent or rinsing agent for lithography in the state mixed with water in the range which forms a homogeneous solution. The amount of water in this case also varies depending on the type and ratio of the solvent A and the solvent B, but is generally 0.5 to 50 parts by weight (for example, 5 to 50 parts by weight), preferably 100 parts by weight of the total organic solvent. Preferably it is 0.5-40 weight part (for example 5-40 weight part), More preferably, it is 0.5-30 weight part (for example 5-30 weight part).

The cleaning agent and the rinsing agent of the present invention can be applied to known positive resists, negative resists, and antireflection films. Representative examples of the resist to which the cleaning agent and the rinsing agent of the present invention can be applied include, for example, a positive type containing a quinonediazide-based photosensitive agent and an alkali-soluble resin, a chemically amplified resist, and the like. In the mold, for example, those containing a high molecular compound having a photosensitive group such as polyvinyl cinnamate, containing an aromatic azide compound or containing an azide compound containing a cyclized rubber and a bisazide compound, dia The thing containing a crude resin, the photopolymerizable composition containing an addition polymerizable unsaturated compound, a chemically amplified negative resist, etc. are mentioned.

As a resist material suitable for applying the washing | cleaning agent or rinse agent of this invention, the resist material containing a quinonediazide type photosensitive agent and alkali-soluble resin is mentioned. Examples of the quinonediazide-based photosensitizers include, for example, 1,2-benzoquinonediazide-4-sulfonic acid, 1,2-naphthoquinonediazide-4-sulfonic acid, and 1,2-naphthoquinonediazide-5- Sulfonic acids, esters or amides of these sulfonic acids; and the like. Moreover, as alkali-soluble resin, For example, copolymer of polyvinyl phenol, polyvinyl alcohol, acrylic acid, or methacrylic acid, For example, phenol, o-cresol, m-cresol, p-cresol, xylenol, etc. Novolak resin etc. which are manufactured from 1 type, 2 or more types of phenols, and aldehydes, such as formaldehyde and paraformaldehyde, are mentioned.

In addition, chemically amplified resists are also preferred resists to which the cleaning and rinsing agents of the present invention are applied. The chemically amplified resist generates an acid by irradiation with radiation, and changes the solubility in the developer of the irradiation part by chemical change caused by the catalysis of the acid to form a pattern, for example, by acid irradiation. And an acid-sensitive compound containing an acid-sensitizing group-containing resin which decomposes in the presence of an acid to generate an alkali-soluble group such as a phenolic hydroxyl group or carboxyl group, and one containing an alkali-soluble resin, a crosslinking agent, and an acid generator. Can be.

On the other hand, any antireflection film containing an organic material may be used as the antireflection film to which the cleaning agent and the rinse agent of the present invention are applied. As such an anti-reflection film, for example, a dye is added to a polymer containing a polyamic acid or a polybutene acid with a dye, a copolymer with a dye, a maleic anhydride polymer, an itaconic acid polymer, a polyacrylate or a polymethacrylate. Grafted or the like, reaction products of amino aromatic chromophores and polymers having anhydrous groups, those containing water-soluble polymers and water-soluble perfluorocarboxylic acids, organic alkali solutions such as tetramethylammonium hydroxide containing water-soluble polymers, Containing water-soluble film-forming component and fluorine-based surfactant, containing perfluoroalkylcarboxylic acid, organic amine, polyvinylpyrrolidone, perfluoroalkylsulfonic acid, organic amine, polyvinylpyrrolidone, water-soluble The film formed from the organic solvent or aqueous solution, such as containing an alkylsiloxane polymer, is mentioned.

In addition, since the cleaning agent and the rinsing agent of the present invention contain an organic solvent having water solubility, the affinity with the film formed from the aqueous solution is good (the contact angle is small), and the cleaning and rinsing effect with respect to the antireflection film formed from the aqueous solution is excellent. You can get it.

Application of the cleaning agent and the rinsing agent of the present invention can be carried out by the method described in the Industrial Survey Fragment "Introduction to Cleaning Technology", the Industrial Research Fragment "A Washing Technology That Can Be Immediately Used", and the like.

The application of the cleaning agent and the rinsing agent of the present invention will be described in more detail together with the method of forming a resist pattern. First, the resist solution is pretreated as needed by a conventionally known coating method such as spin coating, and glass. It is applied to a substrate or the like. Prior to application of the resist or on the applied resist film, an antireflection film is applied and formed as necessary. For example, in the spin coating method, beads of a resist or an anti-reflection film tend to be formed at the edge of the substrate, and the flow of the beads is accelerated by spraying the cleaning agent and the rinse agent of the present invention onto the rotating edge beads. A resist film or an antireflection film having a substantially uniform thickness can be formed.

In addition, the resist or anti-reflective film wound around the substrate side surface or the back side can be removed by spraying the cleaning agent and rinse agent of the present invention. For example, in the case of a positive resist, when an antireflection film is present between the substrate and the resist film, after the pattern is formed by exposure and development, the antireflection film of the portion without the resist film is used by using the rinse agent of the present invention. It can also be wet removed.

The resist applied to the substrate is, for example, prebaked on a hot plate to remove the solvent, resulting in a resist film having a thickness of usually about 1 to 2.5 m. The preliminary baking temperature varies depending on the type of solvent or resist used, but is usually carried out at a temperature of 20 to 200 ° C, preferably 50 to 150 ° C. The resist film is then subjected to a mask using a known irradiation device such as a high pressure mercury lamp, a metal halide lamp, an ultra high pressure mercury lamp, a KrF excimer laser, an ArF excimer laser, an F2 laser, a soft X-ray irradiation apparatus, an electron beam drawing apparatus, and the like. Exposure is performed through.

After exposure, after baking is carried out as necessary to improve developability, resolution, pattern shape, and the like, development is performed to form a resist pattern. The development of the resist is usually performed using a developer using a difference in solubility in a solvent or an alkaline solution in an exposed area and an unexposed area. As an alkaline developer, aqueous solution or aqueous solution, such as sodium hydroxide and tetramethylammonium hydroxide (TMAH), is used, for example.

In addition, although the application | coating of the said resist film or an antireflection film is performed using a coating apparatus, after a resist film or an antireflection film is apply | coated on a board | substrate, the apparatus after application | coating may be used again as a coating apparatus of a different material. For example, it may be used as a coating apparatus, such as an antireflective film from a resist, a different resist from a resist, or a resist from an antireflective film. In such a case, the coating device is washed before being used as a coating device for a different material. In this case, the cleaning agent and the rinsing agent of the present invention can be effectively used.

<Examples>

Hereinafter, the present invention will be described in detail by way of examples, but the present invention is not limited thereto. In addition, each abbreviation in a table | surface represents the following organic solvents.

MMPGAC: α type propylene glycol-1-methyl ether acetate (1,2-propylene glycol-1-methyl ether acetate)

MMPG: α type propylene glycol-1-methyl ether (1,2-propylene glycol-1-methyl ether)

MBA: 1,3-butanediol-3-methyl ether acetate

MB: 1,3-butanediol-3-methyl ether

BA: Butyl Acetate

1,3-PDME: β-type propylene glycol-1-methyl ether (1,3-propanediol-1-methyl ether)

<Examples 1-5, Comparative Examples 1-5>

About each Example and the comparative example, the 2 types of organic solvents shown in following Table 1 were mixed by predetermined ratio, and it was set as the uniform mixed solvent. The volume of this mixed solvent was measured, and equal volume water was added and the presence or absence of liquid separation was examined at the temperature shown in Table 1. The results are shown in Table 1.

<Examples 6 to 10, Comparative Example 6>

About each Example and the comparative example, the 2 types of organic solvents shown in following Table 2 were mixed by predetermined ratio, and the washing | cleaning agent was manufactured. This detergent was sampled, the capacity was measured, water of equal capacity was added, and the presence or absence of liquid separation was investigated at the temperature of Table 2. The results are shown in Table 2.

Subsequently, 100 parts by weight of a novolak resin (condensation product of m-cresol / p-cresol = 6/4 and formaldehyde) and a quinonediazide photosensitizer (2,3,4,4'-tetrahydroxybenzophenone and 1 24 parts by weight of an ester of 2, naphthoquinonediazide-5-sulfonyl chloride) in α-propylene glycol monomethyl ether acetate so that the solid content is 25% by weight after prebaking on a 4-inch silicon substrate The film was spin-coated to have a thickness of 2 m, and prebaked at 100 ° C. for 90 seconds on a direct hot plate to form a resist film. 0.03 ml of the detergent of the composition shown in Table 2 was dripped on the said resist film, the time (sec) from dripping to visible base silicon was measured, and the value of the resist film thickness (angstrom) divided by time (sec). (Angstrom / sec) was taken as the dissolution rate. The results are shown in Table 2.

<Examples 11 to 15, Comparative Example 7>

About each Example and the comparative example, the 2 types of organic solvent and water which were shown in following Table 3 were mixed by predetermined ratio, and the rinse agent was manufactured. The dissolution rate (angstrom / sec) of the resist film was measured in the same manner as in Examples 6 to 10 using the rinse agent. The results are shown in Table 3.

In addition, in each Example and the comparative example, the mixed solvent obtained by mixing only 2 types of organic solvents (it does not contain water) is prepared, this mixed solvent and the same volume of water are added, and it is the thing of 30-35 degreeC. When the presence or absence of liquid separation was examined at the temperature, the mixed solvent of the two organic solvents of Examples 11 to 15 was not separated, but the mixed solvent of the two organic solvents of Comparative Example 7 was separated.

Industrial availability

The cleaning agent and the rinsing agent of the present invention have high solubility in resist films, antireflection films and the like, and are excellent in practicality. Moreover, it can be handled safely and simply at a manufacturing site and a factory.

The cleaning or rinsing agent for lithography of the present invention exhibits good solubility and peelability not only for a resist or an antireflection film formed of an organic solvent solution, but also for an antireflection film formed of an aqueous solution. In addition, the inclusion of water improves the risk of fire and is excellent in handling.

Claims (8)

at least one solvent B selected from the group consisting of (a2) 1,3-butanediol-3-alkylether acetate, (b1) propylene glycol-1-alkyl ether and (b2) 1,3-butanediol-3-alkyl ether (A2) a cleaning or rinsing agent for lithography which can form a homogeneous solution when mixed with water having the same capacity as the mixed solvent of 1,3-butanediol-3-alkylether acetate and solvent B, (a2) The washing | cleaning agent or rinse agent for lithography containing 1, 3- butanediol-3- alkyl ether acetate and the solvent B in the ratio of the former / the latter (weight ratio) = 1 / 99-55 / 45. The alkyl group of claim 1, wherein the alkyl group in 1,3-butanediol-3-alkylether acetate (a2), propylene glycol-1-alkylether (b1) or 1,3-butanediol-3-alkylether (b2) is a methyl group. Cleaner or rinse agent for phosphorus lithography. The washing or rinsing agent for lithography according to claim 1 or 2, further comprising water in addition to 1,3-butanediol-3-alkylether acetate (a2) and solvent B. delete delete delete delete delete