JPH02253265A - Resist peeling agent - Google Patents
Resist peeling agentInfo
- Publication number
- JPH02253265A JPH02253265A JP7602689A JP7602689A JPH02253265A JP H02253265 A JPH02253265 A JP H02253265A JP 7602689 A JP7602689 A JP 7602689A JP 7602689 A JP7602689 A JP 7602689A JP H02253265 A JPH02253265 A JP H02253265A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- acetate
- alkoxypropanol
- propanol
- peeling agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims abstract description 3
- 239000003795 chemical substances by application Substances 0.000 abstract description 14
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 abstract description 10
- 229940093475 2-ethoxyethanol Drugs 0.000 abstract description 8
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 abstract description 4
- XHMWPVBQGARKQM-UHFFFAOYSA-N 3-ethoxy-1-propanol Chemical compound CCOCCCO XHMWPVBQGARKQM-UHFFFAOYSA-N 0.000 abstract description 3
- 231100000419 toxicity Toxicity 0.000 abstract description 3
- 230000001988 toxicity Effects 0.000 abstract description 3
- 238000004090 dissolution Methods 0.000 abstract description 2
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 abstract 1
- JDFDHBSESGTDAL-UHFFFAOYSA-N 3-methoxypropan-1-ol Chemical compound COCCCO JDFDHBSESGTDAL-UHFFFAOYSA-N 0.000 abstract 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 14
- 239000002904 solvent Substances 0.000 description 10
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- -1 quinone diazide compound Chemical class 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 235000019439 ethyl acetate Nutrition 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- JSGVZVOGOQILFM-UHFFFAOYSA-N 3-methoxy-1-butanol Chemical compound COC(C)CCO JSGVZVOGOQILFM-UHFFFAOYSA-N 0.000 description 2
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical compound COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002168 ethanoic acid esters Chemical class 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- YKYONYBAUNKHLG-UHFFFAOYSA-N propyl acetate Chemical compound CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- HQLKZWRSOHTERR-UHFFFAOYSA-N 2-Ethylbutyl acetate Chemical compound CCC(CC)COC(C)=O HQLKZWRSOHTERR-UHFFFAOYSA-N 0.000 description 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N 2-propanol Substances CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 1
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical class [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 1
- CPIVYSAVIPTCCX-UHFFFAOYSA-N 4-methylpentan-2-yl acetate Chemical compound CC(C)CC(C)OC(C)=O CPIVYSAVIPTCCX-UHFFFAOYSA-N 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical class OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 206010043275 Teratogenicity Diseases 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-N acetic acid Substances CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- IPTNXMGXEGQYSY-UHFFFAOYSA-N acetic acid;1-methoxybutan-1-ol Chemical compound CC(O)=O.CCCC(O)OC IPTNXMGXEGQYSY-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- GJRQTCIYDGXPES-UHFFFAOYSA-N iso-butyl acetate Natural products CC(C)COC(C)=O GJRQTCIYDGXPES-UHFFFAOYSA-N 0.000 description 1
- 229940117955 isoamyl acetate Drugs 0.000 description 1
- FGKJLKRYENPLQH-UHFFFAOYSA-M isocaproate Chemical compound CC(C)CCC([O-])=O FGKJLKRYENPLQH-UHFFFAOYSA-M 0.000 description 1
- JMMWKPVZQRWMSS-UHFFFAOYSA-N isopropanol acetate Natural products CC(C)OC(C)=O JMMWKPVZQRWMSS-UHFFFAOYSA-N 0.000 description 1
- 229940011051 isopropyl acetate Drugs 0.000 description 1
- GWYFCOCPABKNJV-UHFFFAOYSA-N isovaleric acid Chemical compound CC(C)CC(O)=O GWYFCOCPABKNJV-UHFFFAOYSA-N 0.000 description 1
- OQAGVSWESNCJJT-UHFFFAOYSA-N isovaleric acid methyl ester Natural products COC(=O)CC(C)C OQAGVSWESNCJJT-UHFFFAOYSA-N 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 231100000211 teratogenicity Toxicity 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、半導体集積回路等の製造工程においてパター
ン形成に用いられるレジストを剥離除去する際の剥離剤
に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a stripping agent for stripping and removing resist used for pattern formation in the manufacturing process of semiconductor integrated circuits and the like.
〈従来の技術〉
半導体集積回路等の製造工程においては、回路パターン
等の形成のために、レジストを用いたリソグラフィー技
術が多用される。その際、使用したレジストを剥離除去
する工程が必ず存在する。<Prior Art> In the manufacturing process of semiconductor integrated circuits and the like, lithography technology using resist is often used to form circuit patterns and the like. At that time, there is always a step of peeling off and removing the used resist.
またレジスト塗布時にウェハー裏面やエツジ部に付着し
た不要なレジストを除去する必要がある。Further, when resist is applied, it is necessary to remove unnecessary resist attached to the back surface or edge portion of the wafer.
レジストを除去するには、薬品で化学的に処理する方法
とＯｔプラズマで焼いてしまうドライプロセスがある。To remove the resist, there are two methods: a chemical treatment method using chemicals and a dry process in which it is baked with Ot plasma.
前者は、化学薬品でレジストを溶解して除去する方法で
、その陸用いる薬品をレジスト剥離剤あるいはレジスト
剥離液と称している。The former is a method in which the resist is dissolved and removed using chemicals, and the chemicals used are called resist stripping agents or resist stripping solutions.
現在、半導体集積回路等の製造工程で使用されているレ
ジストとしては、ノボラック樹脂とキノンジアジド化合
物からなるポジ型フォトレジストが多数を占めている。Currently, the majority of resists used in the manufacturing process of semiconductor integrated circuits and the like are positive photoresists made of novolak resin and quinone diazide compound.
従来、このポジ型プオトレジストを剥離除去するには、
有機溶剤）゛用いられてきた。具体的にはエチレングリ
コールの誘導体特に２−エトキシエタノール（別名エチ
レングリコールモノエチルエーテル、通称エチルセロソ
ルブ）あるいは該溶剤と他の溶剤との混合溶剤がよく用
いられてきた。Conventionally, to peel off and remove this positive photoresist,
Organic solvents) have been used. Specifically, ethylene glycol derivatives, particularly 2-ethoxyethanol (also known as ethylene glycol monoethyl ether, commonly known as ethyl cellosolve), or mixed solvents of this solvent and other solvents have often been used.
しかし、最近になって２−エトキシエタノールの生体に
対する°毒性（詳しくは催奇性）が問題となっており、
日本でも労働安全衛生法で定める作業規準が１９９０年
４月より厳しくなることが決まっている。（管理濃度
５ｐｐｍ）、従って、安全衛生土酸溶剤を使用すること
は好ましくない。However, recently, the toxicity (specifically, teratogenicity) of 2-ethoxyethanol to living organisms has become a problem.
In Japan, the work standards stipulated by the Industrial Safety and Health Act are set to become stricter from April 1990. (Management concentration
5 ppm), therefore, it is not preferable to use earth acid solvents for safety and health reasons.
そこで、他の溶剤、例えばアセトンをレジスト剥離剤と
して使用しようとした場合、アセトンはノボラック樹脂
系のレジストに対する溶解力が強くレジストを容易に剥
離する。また蒸発速度が速くアセトン自身も速やかに除
去される。しかしながら引火点が低く火災や爆発の危険
性が高いため実際の製造ラインで使用することはできな
い。このようにレジスト剥離剤には剥離性能とともに安
全衛生上問題のない特性が要求される。Therefore, when trying to use another solvent, such as acetone, as a resist stripper, acetone has a strong dissolving power for novolak resin-based resists and easily strips the resists. In addition, the evaporation rate is fast and acetone itself is quickly removed. However, it cannot be used in actual production lines because of its low flash point and high risk of fire and explosion. As described above, resist stripping agents are required to have stripping performance as well as properties that pose no health and safety problems.
〈発明が解決しようとする課題〉
本発明の目的は、以下に述べるような特性を有するレジ
スト剥離剤を提供することにある。すなわち■レジスト
膜を容易に剥離（溶解）し除去する■蒸発速度が十分速
く、レジスト膜を除去した後、剥離剤自身をスピンオフ
等の方法で簡単に除去できる■レジストを剥離除去し剥
離剤自身も除去された後、剥離面に残渣が残らない■ウ
ェハー表面層あるいは基板を侵さない■人体に害を及ぼ
さない■火災・爆発の危険性が低い、という特性である
。<Problems to be Solved by the Invention> An object of the present invention is to provide a resist stripping agent having the following characteristics. In other words, ■ The resist film can be easily peeled off (dissolved) and removed. ■ The evaporation rate is sufficiently fast that after removing the resist film, the stripping agent itself can be easily removed by spin-off, etc. ■ The resist can be peeled off and the stripping agent itself can be removed. After removal, no residue remains on the peeled surface. ■ It does not damage the wafer surface layer or substrate. ■ It does not cause any harm to the human body. ■ There is a low risk of fire or explosion.
〈課題を解決する手段〉
本発明者らは上記目的を達成すべく鋭意検討した結果、
低級アルコキシプロパノールが剥離剤として良好な結果
を示すことを見出した。<Means for Solving the Problems> As a result of intensive studies by the present inventors to achieve the above object,
It has been found that lower alkoxypropanols show good results as stripping agents.
すなわち、本発明は低級アルコキシプロパノールまたは
、低級アルコキシプロパノールと酢酸エステルとの混合
物からなるレジスト剥離剤である。That is, the present invention is a resist stripping agent comprising lower alkoxypropanol or a mixture of lower alkoxypropanol and acetic acid ester.
低級アルコキシプロパノールとしては、ニーメトキシ−
２−プロパツール、３−メｊ−キシー１−プロパツール
、１−エトキシ−２−プロパツール３−エトキシ−１−
プロパツール等が挙げられる。As the lower alkoxypropanol, niemethoxy-
2-propertool, 3-methoxy1-propertool, 1-ethoxy-2-propertool 3-ethoxy-1-
Examples include property tools.
特に、１−メトキシ−２−プロパツールが好ましい、ま
た酢酸エステルとしては、酢酸メチル、酢酸エチル、酢
酸−ｎ−プロピル、酢酸イソプロピル、酢酸−ｎ−ブチ
ル、酢酸イソブチル、酢酸第ニブチル、酢酸−ｎ−アミ
ル、酢酸イソアミル。In particular, 1-methoxy-2-propanol is preferred, and the acetic acid esters include methyl acetate, ethyl acetate, n-propyl acetate, isopropyl acetate, n-butyl acetate, isobutyl acetate, nibutyl acetate, n-acetate. -amyl, isoamyl acetate.
酢酸メチルイソアミル、酢酸メトキシブチル、酢酸第ニ
ー・キシル、酢酸−２−エチルブチル等が挙げられる。Examples include methylisoamyl acetate, methoxybutyl acetate, di-xyl acetate, and 2-ethylbutyl acetate.
酢酸エステルを混合することにより、■レジストに対す
る溶解速度が増す■ウェハーとのぬれ性が良くなる、と
いう効果がある。混合する場合の比率は、低級アルコキ
シプロパノール／酢酸エステル＝ １００１０〜２０／
８０、好ましくは１００１０〜４０／６０（容量比）で
ある。Mixing acetate ester has the following effects: (1) increases the dissolution rate of the resist; and (2) improves the wettability with the wafer. When mixing, the ratio is lower alkoxypropanol/acetic ester = 10010-20/
80, preferably 10010 to 40/60 (capacity ratio).
低級アルコキシプロパノールが２０％より少ないとレジ
ストに対する溶解力が低下する。When the content of lower alkoxypropanol is less than 20%, the dissolving power for resist decreases.
この低級アルコキシプロパノールは、半導体回路不良の
原因となる塩素イオン、および金属イオン（Ｎａ” 、
Ｋ” 、 Ｆｅ”、 Ｆｅｊ・６ａｔ＋、 ５ｎｚ２
５ｎ４４Ｚｎ”、 Ａ ｌ ”、 Ｍｇ”等）をでき
る限り含まないことが好ましい。また、過酸化物、高沸
点物質あるいは水分等の不純物をできる限り含まないこ
とが好ましい。このことは、酢酸エステルについても同
様である。This lower alkoxypropanol contains chlorine ions and metal ions (Na”,
K", Fe", Fej・6at+, 5nz2
5n44Zn", Al", Mg", etc.). It is also preferable to contain impurities such as peroxides, high-boiling substances, or moisture as much as possible. This means that for acetic ester The same is true.
また本発明のレジスト剥離剤は、０．２μｍ以下の孔径
を有するフィルターで予め濾過したものを使用すること
が好ましい。半導体回路等の製造における不良品発生の
原因となる異物や塵を除去することができる。Moreover, it is preferable to use the resist stripping agent of the present invention that has been previously filtered with a filter having a pore size of 0.2 μm or less. Foreign matter and dust that cause defective products in the manufacture of semiconductor circuits and the like can be removed.
低級アルコキシプロパノールは、現在リソグラフィー分
野で広く使用されているノボうツク樹脂とキノンジアジ
ド化合物からなるポジ型フォトレジストに対する溶解力
が強く良好な剥離性を示す。Lower alkoxypropanol has a strong dissolving power and exhibits good releasability for positive-working photoresists made of Novotsuk resin and quinonediazide compounds, which are currently widely used in the lithography field.
また、蒸発速度が十分速いためスピンオフ等の方法で容
易に除去できる。ウェハー表面層や基板を侵すこともな
い。また高沸点物等の不純物をほとんど含まないため、
剥離剤除去後の残渣が出ない。Moreover, since the evaporation rate is sufficiently high, it can be easily removed by a method such as spin-off. It does not attack the wafer surface layer or substrate. In addition, it contains almost no impurities such as high-boiling substances, so
No residue left after removing the remover.
米国ＡＣＧＩＨ（八ｍｅｒｉｃａｎ Ｃｏｎｆｅｒｅ
ｎｃｅ ｏｆＧｏｖｅｒｎｍｅｎｔａｌ Ｉｎｄｕｓ
ｔｒｊａｌ Ｈｙｇｉｅｎｔｓｔｓ ）の勧告する化学
物質の許容濃度のうち時間荷重平均濃度に関して、２−
エトキシエタノールの５ ｐｐＩｌｌに対して、１−メ
トキシ−２−プロパツールは１１００ｐｐであり人体に
とって比較的安全である。ACGIH (American Conference)
nce ofGovernmental Indus
Regarding the time-weighted average concentration of the permissible concentrations of chemical substances recommended by
Compared to 5 ppIll of ethoxyethanol, 1-methoxy-2-propatol has a concentration of 1100 pp, making it relatively safe for the human body.
低級アルコキシプロパノールは、消防法で定める危険物
の分類では第四類第二石油類に属し、火災等の危険性は
十分低いと考えてよい。Lower alkoxypropanol belongs to class 4, class 2 petroleum, according to the classification of dangerous substances stipulated by the Fire Service Act, and can be considered to have a sufficiently low risk of fire.
以上の特性を有する低級アルコキシプロパノール、特に
ニーメトキシ−２−プロパツールがレジスト剥離剤とし
て優れているという事実はこれまで知られておらず、今
回のわれわれの検討で明らかとなった。The fact that lower alkoxypropanol, especially niemethoxy-2-propanol, which has the above properties, is excellent as a resist stripping agent has not been known until now, and has been clarified through our present study.
〈実施例〉
以下に実施例を示して本発明を具体的に説明するが、本
発明はこれらに限定されるものではない。<Examples> The present invention will be specifically described below with reference to Examples, but the present invention is not limited thereto.
■−上
次に挙げる１６種の溶剤を用いてレジストを剥離する試
験を行なった。（溶剤の混合比率は容量比、）
■ １−メトキシ−２−プロパツール
■ ｌ−メトキシ−２−プロパツール／６Ｍ−ｎ−ブチ
ル＝１／１
■ １−メトキシ−２−プロピルアセテート■ １−メ
トキシ−２−プロピルアセテート／酢酸−ｎ−ブチル＝
１／１
■ ３−メトキシブタノール
■ ３−メトキシブタノール／酢酸−ｎ−ブチル−１／
１
■ ３−メトキシブチルアセテート
■ ３−メトキシブチルアセテート／酢酸−ｎ−ブチル
＝１／１
■ ３−エトキシ−１−プロパツール
［相］ ３−エトキシ−１−プロパツール／酢酸−ｎ−
一１／１
■ ３−エトキシ−１−プロピルアセテート＠ ３−エ
トキシ−１−プロピルアセテート／酢酸−ｎ−ブチル−
１／１
＠ ２−エトキシエチルアセテート（エチレングリコー
ルモノエチルエーテルアセテート）ｏ ２−エトキシエ
チルアセテート／酢酸−ｎ −ブチル＝１／１
■ ２−エトキシエタノール
＠） ２−エトキシエタノール／酢酸−ｎ−ブチル−１
／１
まずノボラック樹脂とキノンジアジド化合物からなるポ
ジ型フォトレジストを２種類用意する。(2) A resist peeling test was conducted using 16 types of solvents listed below. (The mixing ratio of solvents is by volume.) ■ 1-methoxy-2-propatol ■ l-methoxy-2-propatol/6M-n-butyl = 1/1 ■ 1-methoxy-2-propyl acetate ■ 1- Methoxy-2-propyl acetate/n-butyl acetate=
1/1 ■ 3-methoxybutanol ■ 3-methoxybutanol/n-butyl acetate-1/
1 ■ 3-Methoxybutyl acetate ■ 3-methoxybutyl acetate/n-butyl acetate = 1/1 ■ 3-ethoxy-1-propanol [phase] 3-ethoxy-1-propanol/n-acetic acid
1/1 ■ 3-Ethoxy-1-propyl acetate @ 3-ethoxy-1-propyl acetate/n-butyl acetate
1/1 @ 2-ethoxyethyl acetate (ethylene glycol monoethyl ether acetate) o 2-ethoxyethyl acetate/n-butyl acetate = 1/1 ■ 2-ethoxyethanol @) 2-ethoxyethanol/n-butyl acetate -1
/1 First, two types of positive photoresists made of novolak resin and quinonediazide compound are prepared.
１つは剥離が比較的困難とされている市販品で、これを
レジストＡとする。もう１つは汎用市販品（東京応化工
業型０ＦＰＲ−８００）でこれをレジス）Ｂとする。One is a commercially available product that is said to be relatively difficult to peel off, and this will be referred to as resist A. The other is a general-purpose commercially available product (Tokyo Ohka Kogyo model 0FPR-800), which will be referred to as Regis) B.
シリコンウェハー上にレジス）Ａを塗布し１２０°Ｃで
１２０秒間ベータして、約１．４μ−のレジスト膜を形
成した。このウェハーをウェハー１とする。また一方、
シリコンウェハー上にレジストＢを塗布し１２０℃で１
を０秒間ベータして約１．０μ−のレジスト膜を形成し
た後、更にその上にウェハー１と同様にして約１．４μ
−のレジストＡの膜を形成した。これをウェハー２とす
る。Resist) A was coated on a silicon wafer and betatized at 120°C for 120 seconds to form a resist film with a thickness of about 1.4μ. This wafer will be referred to as wafer 1. On the other hand,
Coat resist B on a silicon wafer and heat it at 120°C.
After beta resisting for 0 seconds to form a resist film with a thickness of approximately 1.0 μ-, a resist film of approximately 1.4 μ-
- A film of resist A was formed. This will be referred to as wafer 2.
ウェハー１をスピンナーに装着して５００ｒｐｍで回転
させながら、■〜［相］の溶剤を定量的に２０秒間滴下
し、その後３０００ｒｐｍでスピンオフしてレジストが
剥離できたかどうか観察した。更に溶剤を滴下する時間
を４０秒、６０秒と長くして同様な実験を行なった。Wafer 1 was mounted on a spinner and rotated at 500 rpm, while the solvents of phases 1 to 1 were quantitatively dropped for 20 seconds, and then spun off at 3000 rpm to observe whether the resist was peeled off. Similar experiments were conducted by increasing the time for dropping the solvent to 40 seconds and 60 seconds.
ウェハー２についても、ウェハー１と同様の実験を行な
った。結果を表１に示す＝
本発明による１７メトキシー２−プロパツールおよび該
溶剤と酢酸ブチルの混合溶剤は、２−エトキシエタノー
ルと同等の剥離能力を示した。また本発明による３−エ
トキシ−１−プロパツールおよび該溶剤と酢酸ブチルの
混合溶剤は、２−エトキシエタノールにはわずかに劣る
ものの十分使用に耐える剥離能力を示した０本発明によ
る上記の溶剤でレジストを剥離除去した後、剥離面を光
学顕微鏡で観察したところ残渣は見られなかった。The same experiment as that for wafer 1 was conducted for wafer 2 as well. The results are shown in Table 1 = 17methoxy 2-propertool according to the present invention and a mixed solvent of this solvent and butyl acetate showed a peeling ability equivalent to that of 2-ethoxyethanol. In addition, 3-ethoxy-1-propertool according to the present invention and a mixed solvent of the solvent and butyl acetate have a peeling ability that is sufficient to withstand use, although it is slightly inferior to 2-ethoxyethanol. After the resist was peeled off, no residue was observed when the peeled surface was observed with an optical microscope.
〔発明の効果］ 本発明のレジス ト剥離削は毒性が低く、 しかも 従来の代表的ではあるが、 毒性の強いレジスト剥 特 許 庁 長 官 殿 離削である２−エトキシエタノールにほぼ匹敵すｌ。〔Effect of the invention] Regis of the present invention Exfoliation has low toxicity; Moreover, Although it is a traditional representative, Highly toxic resist stripper Special permission Agency long Government Lord It is almost comparable to 2-ethoxyethanol, which is abrasive.
事件の表示 る剥離能力を示すので、 任用性が高い。Display of incidents It shows a peeling ability that Highly appointable.
特願平１−７６０２６号 ３゜ 補正をする者 特 許 出 願 人 日本ゼオン株式会社 事件との関係Patent Application No. 1-76026 3゜ person who makes corrections Special permission Out wish Man Nippon Zeon Co., Ltd. Relationship with the incident
Claims (1)
ロパノールと酢酸エステルとの混合物からなることを特
徴とするレジスト剥離剤。A resist stripper comprising lower alkoxypropanol or a mixture of lower alkoxypropanol and acetate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7602689A JPH02253265A (en) | 1989-03-28 | 1989-03-28 | Resist peeling agent |
| GB9006881A GB2229827A (en) | 1989-03-28 | 1990-03-28 | "Use of a propanol as resist-remover". |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7602689A JPH02253265A (en) | 1989-03-28 | 1989-03-28 | Resist peeling agent |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02253265A true JPH02253265A (en) | 1990-10-12 |
Family
ID=13593314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7602689A Pending JPH02253265A (en) | 1989-03-28 | 1989-03-28 | Resist peeling agent |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH02253265A (en) |
| GB (1) | GB2229827A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5759973A (en) * | 1996-09-06 | 1998-06-02 | Olin Microelectronic Chemicals, Inc. | Photoresist stripping and cleaning compositions |
| US5780406A (en) * | 1996-09-06 | 1998-07-14 | Honda; Kenji | Non-corrosive cleaning composition for removing plasma etching residues |
| US5817610A (en) * | 1996-09-06 | 1998-10-06 | Olin Microelectronic Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
| US6030932A (en) * | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
| US6413923B2 (en) | 1999-11-15 | 2002-07-02 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
| WO2006070709A1 (en) * | 2004-12-28 | 2006-07-06 | Tokyo Ohka Kogyo Co., Ltd. | Cleaning liquid for lithography and method of cleaning therewith |
| JP2007072332A (en) * | 2005-09-09 | 2007-03-22 | Daicel Chem Ind Ltd | Cleaning agent or rinsing agent for lithography |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3978255B2 (en) * | 1997-06-24 | 2007-09-19 | Ａｚエレクトロニックマテリアルズ株式会社 | Lithographic cleaning agent |
| KR100335484B1 (en) * | 1998-08-05 | 2002-05-04 | 윤종용 | Use of an Alkoxy N-Hydroxyalkyl Alkanamide as Resist Removing Agent, Composition for Removing Resist, Method for Preparing the Same and Resist Removing Method Using the Same |
| TW594442B (en) * | 1998-08-05 | 2004-06-21 | Samsung Electronics Co Ltd | Resist removing method and apparatus |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3012522A1 (en) * | 1980-03-31 | 1981-10-08 | Hoechst Ag, 6000 Frankfurt | METHOD AND DEVELOPER SOLUTION FOR DEVELOPING EXPOSED NEGATIVE WORKING DIAZONIUM SALT LAYERS |
| US4786580A (en) * | 1983-12-27 | 1988-11-22 | Hoechst Celanese Corporation | Method of developing imaged diazo material with propanol containing developer composition |
| DE3582697D1 (en) * | 1984-06-07 | 1991-06-06 | Hoechst Ag | POSITIVELY WORKING RADIATION-SENSITIVE COATING SOLUTION. |
| US4692398A (en) * | 1985-10-28 | 1987-09-08 | American Hoechst Corporation | Process of using photoresist treating composition containing a mixture of a hexa-alkyl disilazane, propylene glycol alkyl ether and propylene glycol alkyl ether acetate |
-
1989
- 1989-03-28 JP JP7602689A patent/JPH02253265A/en active Pending
-
1990
- 1990-03-28 GB GB9006881A patent/GB2229827A/en not_active Withdrawn
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5759973A (en) * | 1996-09-06 | 1998-06-02 | Olin Microelectronic Chemicals, Inc. | Photoresist stripping and cleaning compositions |
| US5780406A (en) * | 1996-09-06 | 1998-07-14 | Honda; Kenji | Non-corrosive cleaning composition for removing plasma etching residues |
| US5817610A (en) * | 1996-09-06 | 1998-10-06 | Olin Microelectronic Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
| US6020292A (en) * | 1996-09-06 | 2000-02-01 | Olin Microelectronic Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
| US6030932A (en) * | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
| US6191086B1 (en) | 1996-09-06 | 2001-02-20 | Arch Specialty Chemicals, Inc. | Cleaning composition and method for removing residues |
| US6413923B2 (en) | 1999-11-15 | 2002-07-02 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
| US7001874B2 (en) | 1999-11-15 | 2006-02-21 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
| US7402552B2 (en) | 1999-11-15 | 2008-07-22 | Fujifilm Electronic Materials U.S.A., Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
| WO2006070709A1 (en) * | 2004-12-28 | 2006-07-06 | Tokyo Ohka Kogyo Co., Ltd. | Cleaning liquid for lithography and method of cleaning therewith |
| US7576046B2 (en) | 2004-12-28 | 2009-08-18 | Tokyo Ohka Kogyo Co., Ltd. | Cleaning liquid for lithography and method of cleaning therewith |
| JP2007072332A (en) * | 2005-09-09 | 2007-03-22 | Daicel Chem Ind Ltd | Cleaning agent or rinsing agent for lithography |
| JP4588590B2 (en) * | 2005-09-09 | 2010-12-01 | ダイセル化学工業株式会社 | Lithographic cleaning agent or rinse agent |
| KR101286817B1 (en) * | 2005-09-09 | 2013-07-17 | 가부시끼가이샤 다이셀 | Cleaning agent or rinsing agent for lithography |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2229827A (en) | 1990-10-03 |
| GB9006881D0 (en) | 1990-05-23 |
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