JP2001005200A - Peeling agent composition for resist and method of using the same - Google Patents
Peeling agent composition for resist and method of using the sameInfo
- Publication number
- JP2001005200A JP2001005200A JP17345499A JP17345499A JP2001005200A JP 2001005200 A JP2001005200 A JP 2001005200A JP 17345499 A JP17345499 A JP 17345499A JP 17345499 A JP17345499 A JP 17345499A JP 2001005200 A JP2001005200 A JP 2001005200A
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- JP
- Japan
- Prior art keywords
- resist
- organic solvent
- composition
- ascorbic acid
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体集積回路、
液晶パネルの半導体素子回路等の製造に用いられるフォ
トレジスト剥離剤組成物及びその使用方法、詳しくは、
半導体基板上又は液晶用ガラス基板上に配線を形成する
ときに生成するレジスト残渣の除去性能と、基板のアル
ミニウム防食性との両方を向上させるフォトレジスト剥
離剤組成物及びその使用方法に関するものである。[0001] The present invention relates to a semiconductor integrated circuit,
Photoresist stripper composition used in the manufacture of semiconductor element circuits and the like of liquid crystal panels and methods of using the same, in detail,
The present invention relates to a photoresist stripping agent composition that improves both the performance of removing a resist residue generated when wiring is formed on a semiconductor substrate or a glass substrate for a liquid crystal and the aluminum corrosion protection of a substrate, and a method of using the same. .
【０００２】[0002]
【従来の技術】剥離剤組成物は、半導体集積回路、液晶
パネルの半導体素子回路等の製造に用いられるフォトレ
ジストを剥離する際に用いられる。半導体素子回路又は
付随する電極部の製造は、以下のように行われる。ま
ず、シリコン、ガラス等の基板上に金属膜をＣＶＤやス
パッタ等の方法で積層させる。その上面にフォトレジス
トを膜付けし、それを露光、現像等の処理でパターン形
成する。パターン形成されたフォトレジストをマスクと
して金属膜をエッチングする。その後、不要となったフ
ォトレジストを剥離剤組成物を用いて剥離・除去した
後、洗浄液で洗浄する。これらの操作を繰り返すことに
より素子の形成が行われる。2. Description of the Related Art A stripping composition is used for stripping a photoresist used for manufacturing a semiconductor integrated circuit, a semiconductor element circuit of a liquid crystal panel, and the like. The manufacture of the semiconductor element circuit or the associated electrode unit is performed as follows. First, a metal film is laminated on a substrate such as silicon or glass by a method such as CVD or sputtering. A photoresist is coated on the upper surface, and the photoresist is patterned by exposure, development and the like. The metal film is etched using the patterned photoresist as a mask. Thereafter, the unnecessary photoresist is stripped and removed using a stripping agent composition, and then washed with a washing liquid. An element is formed by repeating these operations.
【０００３】従来、剥離剤組成物としては、有機アルカ
リ、無機アルカリ、有機酸、無機酸、極性溶剤等の単一
溶剤、これらの混合溶液、又はこれらの水溶液が用いら
れている。また、半導体素子回路等の製造工程における
配線形成時に生成するレジスト残渣を除去するために、
アルキルアミン及びアルキルアンモニウム水酸化物の少
なくともいずれかと、有機溶剤と、水とを主成分とする
レジスト剥離剤組成物も良く知られている。Conventionally, a single solvent such as an organic alkali, an inorganic alkali, an organic acid, an inorganic acid, and a polar solvent, a mixed solution thereof, or an aqueous solution thereof has been used as a release agent composition. Further, in order to remove a resist residue generated at the time of forming a wiring in a manufacturing process of a semiconductor element circuit or the like,
A resist stripping composition containing at least one of an alkylamine and an alkylammonium hydroxide, an organic solvent, and water is also well known.
【０００４】さらに、フッ化水素酸と各種アミンとの混
合物が半導体基板製造工程又は液晶用ガラス基板製造工
程における配線形成時に生成するレジスト残渣除去に有
効であることが知られている。例えば、特開平８−２０
２０５２号公報には、フッ化水素酸、フッ化アンモニウ
ム、水溶性有機溶媒及び防食剤を含有するレジスト剥離
液組成物が記載されている。また、特開平９−１９７６
８１号公報には、フッ化水素酸と金属を含まない塩基と
の塩、水溶性有機溶媒及び水を含有し、水素イオン濃度
（pH）が５〜８であるレジスト用剥離液組成物が記載さ
れている。Further, it is known that a mixture of hydrofluoric acid and various amines is effective for removing a resist residue generated during wiring formation in a semiconductor substrate manufacturing process or a liquid crystal glass substrate manufacturing process. For example, JP-A-8-20
No. 2052 describes a resist stripping composition containing hydrofluoric acid, ammonium fluoride, a water-soluble organic solvent and an anticorrosive. Also, Japanese Patent Application Laid-Open No. 9-1976
No. 81 describes a resist stripping solution composition containing a salt of hydrofluoric acid and a metal-free base, a water-soluble organic solvent and water, and having a hydrogen ion concentration (pH) of 5 to 8. Have been.
【０００５】また、特開平７−２０１７９４号公報に
は、半導体装置製造工程において生成する保護堆積膜
を、第四級アンモニウム塩とフッ素化合物を含有する水
溶液、又は第四級アンモニウム塩とフッ素化合物に、ア
ミド類、ラクトン類、ニトリル類、アルコール類、エス
テル類から選ばれた有機溶媒を含有する水溶液からなる
半導体装置洗浄剤を用いて剥離することが記載されてい
る。また、特開平７−２７１０５６号公報には、有機カ
ルボン酸アンモニウム塩又は有機カルボン酸アミン塩、
及びフッ素化合物を含有する水溶液からなるフォトレジ
スト用剥離液が記載されている。さらに、特開平９−６
２０１３号公報には、フッ素化合物及びベタイン化合物
と、アミド類、ラクトン類、アルコール類から選ばれた
一種以上の有機溶剤を含む半導体装置用洗浄剤が記載さ
れている。Japanese Patent Application Laid-Open No. Hei 7-201794 discloses that a protective deposition film formed in a semiconductor device manufacturing process is converted into an aqueous solution containing a quaternary ammonium salt and a fluorine compound or a quaternary ammonium salt and a fluorine compound. It is described that peeling is performed using a semiconductor device cleaning agent comprising an aqueous solution containing an organic solvent selected from amides, lactones, nitriles, alcohols, and esters. Also, JP-A-7-271056 discloses an organic carboxylic acid ammonium salt or an organic carboxylic acid amine salt,
And a photoresist stripper comprising an aqueous solution containing a fluorine compound. Further, Japanese Unexamined Patent Application Publication No. 9-6
JP 2013 describes a cleaning agent for semiconductor devices containing a fluorine compound and a betaine compound and at least one organic solvent selected from amides, lactones and alcohols.
【０００６】[0006]
【発明が解決しようとする課題】レジスト剥離剤組成物
は、レジスト残渣除去性に優れており、かつ、基板上に
形成されたアルミニウム、アルミニウム合金等の導電性
金属膜の腐食が良好に防止できることが要求される。し
かし、フッ化化合物を含有するレジスト剥離剤組成物に
おいて、上記公報に記憶されている組成を用いても、残
渣除去性とアルミニウム防食性の両方を満足させること
ができない。現在、半導体製造工程におけるＡｌ配線上
のレジスト残渣除去の際に、フッ化水素酸とアミンとの
塩、水溶性有機溶媒及び水よりなるレジスト剥離剤組成
物が使用されているが、必ずしもレジスト残渣の除去性
及びアルミニウム防食性を両立させるものではない。特
に、Ａｌ配線上のレジストをアッシングすると、主にＡ
ｌ酸化物が残渣として残るが、これは両性酸化物である
ため、剥離剤組成物をアルカリ性もしくは酸性に調整す
る方が残渣除去性は良くなる。SUMMARY OF THE INVENTION A resist stripping composition is excellent in resist residue removal properties, and can favorably prevent corrosion of a conductive metal film such as aluminum or an aluminum alloy formed on a substrate. Is required. However, in a resist stripping composition containing a fluorinated compound, even if the composition stored in the above publication is used, both the residue removal property and the aluminum corrosion protection property cannot be satisfied. At present, a resist stripper composition comprising a salt of hydrofluoric acid and an amine, a water-soluble organic solvent and water is used for removing a resist residue on an Al wiring in a semiconductor manufacturing process. It does not satisfy both the removability of aluminum and the corrosion protection of aluminum. In particular, when ashing the resist on the Al wiring, mainly A
1 oxide remains as a residue, but since it is an amphoteric oxide, the removal of the residue is better when the release agent composition is adjusted to be alkaline or acidic.
【０００７】そこで、本発明者は種々の実験を重ねた結
果、フッ化アンモニウム、極性有機溶剤及び水からなる
組成物にアスコルビン酸を添加することによって、組成
物を酸性、具体的にはpHを５未満にすることでレジスト
残渣の除去性が向上し、アルミニウム防食性を兼ね備え
たレジスト剥離剤組成物となることを見出した。加え
て、この剥離剤組成物に含有させる極性有機溶剤に、
Ｎ，Ｎ−ジメチルホルムアミド、Ｎ，Ｎ−ジメチルアセ
トアミド、ジメチルスルホキシド、エチレングリコール
及びプロピレングリコールの少なくともいずれかを用い
れば、レジスト残渣除去性において好ましいことを見出
した。本発明は、上記の知見に基づいてなされたもの
で、本発明の目的は、配線形成時に生成するレジスト残
渣を高性能で除去すると同時に、基板上のアルミニウム
の腐食を良好に防止することができるレジスト剥離剤組
成物及びその使用方法を提供することにある。[0007] Therefore, the present inventors have conducted various experiments, and as a result, by adding ascorbic acid to a composition comprising ammonium fluoride, a polar organic solvent and water, the composition was made acidic, specifically pH. It has been found that by setting the ratio to less than 5, the removal of the resist residue is improved, and a resist stripping composition having aluminum corrosion protection is obtained. In addition, the polar organic solvent to be contained in the release agent composition,
It has been found that the use of at least one of N, N-dimethylformamide, N, N-dimethylacetamide, dimethylsulfoxide, ethylene glycol and propylene glycol is preferable in removing resist residues. The present invention has been made based on the above findings, and an object of the present invention is to remove resist residues generated at the time of wiring formation with high performance and at the same time to prevent corrosion of aluminum on a substrate satisfactorily. It is to provide a resist stripping composition and a method for using the same.
【０００８】[0008]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明のレジスト剥離剤組成物は、フッ化アンモ
ニウム、極性有機溶剤及び水を主成分とし、アスコルビ
ン酸を添加し、かつ、水素イオン濃度（pH）が５．０未
満であるように調製される。このレジスト剥離剤組成物
において、フッ化アンモニウムの添加量が０．１〜２重
量％、望ましくは０．５〜１．５重量％、極性有機溶剤
の含有量が２０〜９８．８重量％、望ましくは５０〜８
０重量％、水の含有量が１〜７９．８重量％、望ましく
は５〜５０重量％、アスコルビン酸の含有量が０．０５
〜１．９重量％、望ましくは０．１〜１．５重量％であ
る。In order to achieve the above-mentioned object, a resist stripping composition of the present invention comprises ammonium fluoride, a polar organic solvent and water as main components, to which ascorbic acid is added, and It is prepared so that the hydrogen ion concentration (pH) is less than 5.0. In this resist stripping composition, the amount of ammonium fluoride added is 0.1 to 2% by weight, preferably 0.5 to 1.5% by weight, the content of the polar organic solvent is 20 to 98.8% by weight, Preferably 50 to 8
0 wt%, water content is 1-79.8 wt%, desirably 5-50 wt%, and ascorbic acid content is 0.05
To 1.9% by weight, desirably 0.1 to 1.5% by weight.
【０００９】フッ化アンモニウムが上記の範囲未満の場
合は、レジスト残渣の除去性が低下し、上記の範囲を超
える場合は、アルミニウムやシリコン酸化膜に対する腐
食が激しくなる。また、極性有機溶剤の含有量が上記の
範囲未満の場合は、レジスト残渣の除去性が低下し、上
記の範囲を超える場合は、フッ化アンモニウムが析出す
る場合がある。また、水の含有量が上記の範囲未満の場
合は、レジスト残渣の除去性が低下し、かつフッ化アン
モニウムが析出する場合がある。一方、上記の範囲を超
える場合はアルミニウムが腐食しやすくなる。また、ア
スコルビン酸の含有量が上記の範囲未満の場合は、期待
したレジスト残渣の除去性が得られない。一方、上記の
範囲を超えて含有させてもレジスト残渣の除去効果は同
じで、経済性の面からも好ましくない。When the amount of ammonium fluoride is less than the above range, the removability of the resist residue decreases, and when the amount exceeds the above range, corrosion of aluminum or silicon oxide film becomes severe. In addition, when the content of the polar organic solvent is less than the above range, the removability of the resist residue is reduced. When the content exceeds the above range, ammonium fluoride may be precipitated. When the content of water is less than the above range, the removability of the resist residue is reduced, and ammonium fluoride may be precipitated. On the other hand, when it exceeds the above range, aluminum is easily corroded. If the content of ascorbic acid is less than the above range, the expected removability of the resist residue cannot be obtained. On the other hand, even if the content exceeds the above range, the effect of removing the resist residue is the same, which is not preferable in terms of economy.
【００１０】pHが５．０以上となる場合は、レジスト残
渣除去性が低下する。なお、pH値はアスコルビン酸の添
加により５．０未満になるように調整されるが、その添
加量は残りの組成物の含有量との兼ね合いで決定され
る。極性有機溶剤としては、Ｎ，Ｎ−ジメチルホルムア
ミド、Ｎ，Ｎ−ジメチルアセトアミド、ジメチルスルホ
キシド、エチレングリコール、プロピレングリコールの
１種類又は混合物が用いられる。また、本発明のレジス
ト剥離剤組成物の使用方法は、半導体基板上又は液晶用
ガラス基板上に配線を形成する際に生成するレジスト残
渣を、上記の本発明の剥離剤組成物を用いて剥離・除去
して配線を形成することを特徴としている。[0010] When the pH is 5.0 or more, the removability of the resist residue decreases. The pH value is adjusted to be less than 5.0 by adding ascorbic acid, and the amount of addition is determined in consideration of the content of the remaining composition. As the polar organic solvent, one or a mixture of N, N-dimethylformamide, N, N-dimethylacetamide, dimethyl sulfoxide, ethylene glycol, and propylene glycol is used. In addition, the method for using the resist stripping composition of the present invention includes stripping a resist residue generated when wiring is formed on a semiconductor substrate or a glass substrate for liquid crystal using the stripping composition of the present invention. -It is characterized in that wiring is formed by removal.
【００１１】[0011]
【実施例】以下に実施例及び比較例を示し、本発明の特
徴とするところをより一層明確にする。 実施例１〜５、比較例１〜３ シリコン酸化膜上にＴｉＮ、その上にＴｉ、さらにその
上にＡｌ−Ｃｕを膜付けした基板を、パターニングされ
たレジストをマスクとしてＣｌ2 とＢＣｌ3 を用いてド
ライエッチングし、続いて酸素と水とを用いてアッシン
グした時に配線側壁又は上部に生成するレジスト残渣を
剥離対象物とした。表１に示す剥離剤組成物の中に上述
の対象物を２４℃で３min.浸漬した後、２４℃の純水中
に１min.浸漬、さらに新たな２４℃の純水中に１min.浸
漬後、２４℃の純水シャワーで１min.水洗し、最後に窒
素ガスで乾燥させた。走査電子顕微鏡（ＳＥＭ）にて剥
離性（残渣除去の程度）及びアルミニウム腐食の程度を
観察し、比較を行った。結果は表１に示した。表１の剥
離性において、○は「残渣なし」、△は「処理前より残
渣は除去できているが残渣が残っている」、×は「処理
前の残渣の状態と同じ」を示す。また、表１のアルミニ
ウム防食性において、○は「腐食なし」、×は「配線が
細る又は表面荒れがある」、ＮＡは「残渣が多く判定不
可能」を示す。また、表１において、ＤＭＦはＮ，Ｎ−
ジメチルホルムアミド、ＤＭＡＣはＮ，Ｎ−ジメチルア
セトアミド、ＰＧはプロピレングリコール、ＥＧはエチ
レングリコール、ＤＭＳＯはジメチルスルホキシド、Ｍ
ＥＡはモノエタノールアミンを表す。EXAMPLES Examples and comparative examples are shown below to further clarify the features of the present invention. Examples 1 to 5, TiN on Comparative Examples 1 to 3 silicon oxide film, Ti is formed thereon, a further substrate with attached film Al-Cu thereon, the Cl 2 and BCl 3 using the patterned resist as a mask The resist residue formed on the side wall or upper part of the wiring when ashing was performed using oxygen and water followed by dry etching was used as an object to be stripped. After the above object was immersed in the release agent composition shown in Table 1 at 24 ° C. for 3 minutes, immersed in pure water at 24 ° C. for 1 minute, and further immersed in new pure water at 24 ° C. for 1 minute. And washed with a pure water shower at 24 ° C. for 1 min., And finally dried with nitrogen gas. The results were compared by observing the releasability (the degree of residue removal) and the degree of aluminum corrosion with a scanning electron microscope (SEM). The results are shown in Table 1. In the releasability of Table 1, ○ indicates “no residue”, Δ indicates “residue can be removed but residue remains before treatment”, and X indicates “residue state before treatment”. In addition, in the aluminum corrosion protection of Table 1, ○ indicates “no corrosion”, X indicates “the wiring is thin or has a rough surface”, and NA indicates “residue is large and cannot be determined”. In Table 1, DMF is N, N-
Dimethylformamide, DMAC is N, N-dimethylacetamide, PG is propylene glycol, EG is ethylene glycol, DMSO is dimethylsulfoxide, M
EA represents monoethanolamine.
【００１２】[0012]
【表１】 [Table 1]
【００１３】表１より、アスコルビン酸を添加し、か
つ、水素イオン濃度が５．０未満である剥離剤組成物は
剥離性が良好であり、また、Ａｌ腐食も抑制されている
ことがわかる。つぎに、本発明のレジスト剥離剤組成物
の使用方法の一例について説明する。半導体基板上又は
液晶用ガラス基板上に金属薄膜をＣＶＤやスパッタ等に
より形成させる。その上面にフォトレジストを膜付けし
た後、露光、現像等の処理でパターン形成する。パター
ン形成されたフォトレジストをマスクとして金属薄膜を
エッチングする。その後、アッシングによりレジストを
灰化する。最後に灰化したレジスト残渣を本発明のレジ
スト剥離剤組成物を用いて剥離・除去して配線等が形成
された半導体素子が製造される。From Table 1, it can be seen that the release agent composition to which ascorbic acid was added and the hydrogen ion concentration was less than 5.0 had good releasability and suppressed Al corrosion. Next, an example of a method for using the resist stripping composition of the present invention will be described. A metal thin film is formed on a semiconductor substrate or a glass substrate for liquid crystal by CVD, sputtering, or the like. After a photoresist is applied on the upper surface, a pattern is formed by processes such as exposure and development. The metal thin film is etched using the patterned photoresist as a mask. Thereafter, the resist is ashed by ashing. Finally, the ashed resist residue is stripped / removed using the resist stripping composition of the present invention to manufacture a semiconductor element having wirings and the like formed thereon.
【００１４】[0014]
【発明の効果】本発明は上記のように構成されているの
で、つぎのような効果を奏する。 （１） フッ化アンモニウム、極性有機溶剤、水及びア
スコルビン酸を含有し、かつ、pHが５．０未満の範囲に
あるようにレジスト剥離剤組成物を調製することによ
り、半導体又は液晶用の素子回路等の製造工程における
配線形成時に生成するレジスト残渣を高性能で除去する
ことができるとともに、基板上のアルミニウム等の金属
薄膜の腐食を良好に防止することができる。As described above, the present invention has the following effects. (1) A semiconductor or liquid crystal device by preparing a resist stripping composition containing ammonium fluoride, a polar organic solvent, water and ascorbic acid and having a pH of less than 5.0. The resist residue generated at the time of forming the wiring in the manufacturing process of a circuit or the like can be removed with high performance, and the corrosion of a thin metal film such as aluminum on the substrate can be favorably prevented.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小谷 武 兵庫県龍野市龍野町中井236 ナガセ電子 化学株式会社兵庫工場内 Ｆターム(参考） 2H096 AA25 HA23 LA03 LA07 5F046 MA02 MA12 MA17 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Takeshi Kotani 236 Nakai, Tatsuno-cho, Tatsuno-shi, Hyogo Nagase Electronics Co., Ltd. Hyogo Plant F-term (reference) 2H096 AA25 HA23 LA03 LA07 5F046 MA02 MA12 MA17
Claims (4)
及びアスコルビン酸を含有し、かつ、水素イオン濃度
（pH）が５．０未満であることを特徴とするレジスト剥
離剤組成物。1. A resist stripping composition comprising ammonium fluoride, a polar organic solvent, water and ascorbic acid, and having a hydrogen ion concentration (pH) of less than 5.0.
２重量％、極性有機溶剤の含有量が２０〜９８．８重量
％、水の含有量が１〜７９．８重量％、アスコルビン酸
の含有量が０．０５〜１．９重量％である請求項１記載
のレジスト剥離剤組成物。2. The amount of ammonium fluoride added is 0.1 to
2% by weight, 20 to 98.8% by weight of polar organic solvent, 1 to 79.8% by weight of water and 0.05 to 1.9% by weight of ascorbic acid. Item 4. A resist stripping composition according to Item 1.
アミド、Ｎ，Ｎ−ジメチルアセトアミド、ジメチルスル
ホキシド、エチレングリコール及びプロピレングリコー
ルの少なくともいずれかである請求項１又は２記載のレ
ジスト剥離剤組成物。3. The resist stripping composition according to claim 1, wherein the polar organic solvent is at least one of N, N-dimethylformamide, N, N-dimethylacetamide, dimethyl sulfoxide, ethylene glycol and propylene glycol.
配線を形成する際に生成するレジスト残渣を、請求項
１、２又は３記載の剥離剤組成物を用いて剥離・除去し
て配線を形成することを特徴とするレジスト剥離剤組成
物の使用方法。4. A stripping and removing of a resist residue generated when forming a wiring on a semiconductor substrate or a glass substrate for liquid crystal using the stripping agent composition according to claim 1, 2 or 3. A method of using a resist stripping composition, which is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17345499A JP4296320B2 (en) | 1999-06-21 | 1999-06-21 | Resist stripper composition and method of using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17345499A JP4296320B2 (en) | 1999-06-21 | 1999-06-21 | Resist stripper composition and method of using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001005200A true JP2001005200A (en) | 2001-01-12 |
| JP4296320B2 JP4296320B2 (en) | 2009-07-15 |
Family
ID=15960780
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17345499A Expired - Fee Related JP4296320B2 (en) | 1999-06-21 | 1999-06-21 | Resist stripper composition and method of using the same |
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| Country | Link |
|---|---|
| JP (1) | JP4296320B2 (en) |
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|---|---|---|---|---|
| KR100609277B1 (en) * | 2001-08-03 | 2006-08-04 | 도오꾜오까고오교 가부시끼가이샤 | Photoresist stripping solution and a method of stripping photoresists using the same |
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| EP1347339A1 (en) * | 2002-03-22 | 2003-09-24 | Kanto Kagaku Kabushiki Kaisha | Photoresist residue remover composition |
| CN1300641C (en) * | 2002-03-22 | 2007-02-14 | 关东化学株式会社 | Residue removing liquor compsn. of photo resist |
| KR100464858B1 (en) * | 2002-08-23 | 2005-01-05 | 삼성전자주식회사 | Organic Stripping Composition And Method Of Etching Oxide Using Thereof |
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| WO2008050785A1 (en) | 2006-10-24 | 2008-05-02 | Kanto Kagaku Kabushiki Kaisha | Liquid composition for removing photoresist residue and polymer residue |
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