JP2008216843A - Photoresist stripping liquid composition - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a photoresist stripping liquid composition that can completely strip residues at a low temperature in a short period of time, the residues being a photoresist residue and a residue derived from titanium produced when wiring lines and via holes are processed by dry etching or residues being a photoresist residue or a residue derived from titanium and transformed by a plasma gas, remaining when a photoresist layer is removed by ashing with a plasma gas in the process of forming wiring lines of a semiconductor device, and that does not corrode members of the semiconductor device such as an interlayer insulating material and the wiring material, and to provide a method for stripping a photoresist layer, a photoresist residue and a residue derived from titanium by using the above composition. <P>SOLUTION: The photoresist stripping liquid composition comprises a fluorine compound, nitric acid, a phosphorus-containing compound, a water-soluble organic solvent and the balance water. The method for stripping a photoresist layer, a photoresist residue and a residue derived from titanium is carried out by using the above composition. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention is a semiconductor device wiring formation process, and remains when ashing and removing a photoresist layer and a titanium-derived residue generated by processing a wiring and a via hole by dry etching or a plasma gas. A photoresist stripping composition that completely strips photoresist residue and titanium-derived residue modified by plasma gas at low temperature in a short time and does not corrode semiconductor device components such as interlayer insulation materials and wiring materials. Further, the present invention relates to a method of peeling a photoresist layer, a photoresist residue and a titanium-derived residue using the photoresist layer.

2. Description of the Related Art Conventionally, a lithography technique has been applied when patterning a wiring or forming a via hole in an interlayer insulating layer in a wiring formation process of a semiconductor device. Lithography technology is the application of photoresist to the surface layer of wiring materials and interlayer insulation materials, followed by exposure and development to form a pattern, and then using the patterned photoresist layer as a mask, a semiconductor device member in a non-mask region Is a microfabrication technique for selectively etching. After the wiring is processed by this technique, a photoresist layer and a residue derived from titanium are generated.
Further, when the photoresist layer is removed by ashing with a plasma gas, a photoresist residue and a residue derived from titanium altered by the plasma gas remain. If these photoresist layers, photoresist residues or titanium-derived residues remain, they cause disconnection and cause various troubles. To obtain high-quality semiconductor elements, the photoresist layer and photoresist residues In addition, it is required to completely remove the residue derived from titanium.

  Conventionally, a wet removal method using a chemical solution has been used to completely remove a photoresist layer, a photoresist residue or a titanium-derived residue, for example, from “mixed liquid of alkanolamine and water-soluble organic solvent”. A photoresist stripping liquid composition has been proposed (for example, Patent Documents 1 and 2). These stripping solutions have been used in batch-type cleaning apparatuses because they require high temperature and long-time treatment. However, in recent years, in order to efficiently clean a wide variety of devices, the cleaning system has shifted from a batch system to a single wafer system suitable for high-mix, low-volume production. Since this single wafer cleaning apparatus is required to be processed at a low temperature for a short time, the organic amine stripping solution cannot be used. In order to adapt to the single wafer cleaning, it is necessary to remove the photoresist layer, the photoresist residue or the titanium-derived residue at a low temperature in a short time.

  Many patents relating to fluorine compound-containing liquids have been filed as photoresist stripping liquid compositions that can be processed at a low temperature for a short time. For example, a “fluorinated aqueous solution comprising a fluorine compound, a water-soluble organic solvent, and an anticorrosive” has been proposed as a photoresist stripping solution composition that can be used at low temperatures and has the advantage of using pure water as a rinse solution. (For example, Patent Documents 3 and 4). In recent years, however, the conditions for dry etching or plasma ashing have become stricter. As a result, the photoresist layer and photoresist residues have been denatured in strength, or a large amount of titanium-derived residues have been generated with the miniaturization of wiring. As a result, it has become impossible to remove the photoresist layer, the photoresist residue or the titanium-derived residue with the above-mentioned fluorine-based aqueous solution.

  Therefore, in order to improve the peelability of the photoresist layer, the photoresist residue and the titanium-derived residue while maintaining the corrosion resistance of the semiconductor device member such as the interlayer insulating material and the wiring material, the fluorine compound-containing liquid A method has been devised in which an acidic additive is added. Depending on the type of acidic additive, the peelability of the photoresist layer, photoresist residue and titanium-derived residue may decrease, and the corrosivity of semiconductor device members such as interlayer insulation materials and wiring materials may increase. Additive must be selected. In the example of the photoresist stripping liquid composition in which an acidic additive is added to the fluorine compound, “fluorine compound-containing liquid comprising a fluorine compound and a sulfonic acid” (Patent Document 5), and “specific including ammonium fluorosilicate and organic phosphonic acid” An acidic fluorine compound-containing liquid "(Patent Document 6), etc., in which the additives are combined is proposed. In the former stripping solution, no mention is made regarding the corrosion of the interlayer insulating material, which is practically insufficient (see Comparative Example 16). Since the addition of sulfonic acids increases the corrosivity of the interlayer insulating material, it is considered that the corrosion of the interlayer insulating material cannot be ignored especially when the wiring width is reduced, making it difficult to use. In the latter stripping solution, the strippability of the residue derived from titanium is not sufficient (see Comparative Example 17). Further, when the peelability of the titanium-derived residue is improved by increasing the fluorine compound concentration, the problem of corrosion of the wiring material becomes obvious, and it becomes difficult to achieve both the peelability and the corrosion resistance. In addition, patents relating to a photoresist stripping liquid composition in which an additive is added to a fluorine compound-containing liquid have been filed, but a photoresist layer, a photoresist residue, and titanium while maintaining the anticorrosion property of a semiconductor device member A photoresist stripping liquid composition that has extremely good peelability of the residue derived from it has not been developed yet. From this, it had the ability to completely peel off the photoresist layer, photoresist residue and titanium-derived residue at a low temperature in a short time and the ability not to corrode semiconductor device members such as interlayer insulation materials and wiring materials. A photoresist stripper composition has been eagerly desired.

JP 62-49355 A JP-A 64-42653 JP-A-7-201794 JP-A-8-202052 JP 2006-66533 A JP 2006-191002 A

  The present invention is a semiconductor device wiring formation process, and remains when ashing and removing a photoresist layer and a titanium-derived residue generated by processing a wiring and a via hole by dry etching or a plasma gas. Provided is a photoresist stripping solution composition that completely strips a photoresist residue and a titanium-derived residue altered by a plasma gas at a low temperature in a short time and does not corrode semiconductor device members such as interlayer insulating materials and wiring materials. There is.

  As a result of diligent research to solve the above problems, the present inventors have added a fluorine compound and nitric acid, which is an acidic compound, to a mixed solvent of water and a water-soluble organic solvent, so that a photoresist layer, a photo It has been found that the releasability of resist residues and titanium-derived residues can be improved. However, the addition of nitric acid is insufficient for the corrosion resistance of the wiring material and is not suitable as a stripping solution. Therefore, the present inventors have conducted further research to solve the problem, and as a result, found that by mixing nitric acid and phosphorus-containing compound, corrosion of the semiconductor device member can be more effectively suppressed, The present invention has been completed. That is, the present invention provides a photoresist stripping liquid composition having high stripping ability and high anticorrosion effect, which could not be achieved by adding a plurality of additives having different properties, and a combination thereof. The present invention relates to a method for stripping a photoresist layer, a photoresist residue, and a titanium-derived residue using. Details of the present invention are shown below.

1. 0.001 to 10% by weight of a fluorine compound, 3 to 30% by weight of nitric acid, 0.01 to 20% by weight of a phosphorus-containing compound, 1 to 96% by weight of a water-soluble organic solvent, and the balance being water. A resist stripping composition characterized by the above.
2. The resist stripping solution according to claim 1, wherein the fluorine compound is at least one selected from hydrofluoric acid, ammonium fluoride, ammonium acid fluoride, tetramethylammonium fluoride, sodium fluoride, and potassium fluoride. Composition.
3. The resist stripping solution composition according to claim 1, wherein the phosphorus-containing compound is at least one selected from phosphoric acid, phosphonic acid, phosphinic acid, ammonium phosphate, ammonium dihydrogen phosphate, and ammonium monohydrogen phosphate. object.
4. The resist stripping composition according to claim 1, wherein the water-soluble organic solvent is at least one selected from amides, alcohols, and glycol ethers.
5. The resist stripping composition according to claim 4, wherein the amide is N, N-dimethylformamide or dimethylacetamide.
6. The resist stripping composition according to claim 4, wherein the alcohol is at least one selected from the group consisting of ethanol, glycerin, ethylene glycol, and diethylene glycol.
7. The resist stripping composition according to claim 4, wherein the glycol ether is at least one selected from the group of diethylene glycol monomethyl ether and dipropylene glycol monomethyl ether.
8. The photoresist stripping composition according to claim 1, wherein the photoresist layer, the photoresist residue and the titanium-derived residue are stripped in the wiring formation step of the semiconductor device.
9. In the step of forming a wiring of a semiconductor device, by using a single wafer cleaning apparatus at a processing temperature of 20 to 50 ° C. and a processing time of 30 to 300 seconds, processing with the resist stripping solution composition according to claim 1 A method for removing a resist layer, a photoresist residue, and a titanium-derived residue.
10. The stripping method according to claim 9, wherein water corresponding to the evaporated water is replenished when the photoresist stripping composition is used.

  By using the photoresist stripping composition of the present invention, a photoresist layer, a photoresist residue, and a titanium-derived residue, which cannot be stripped by a conventional photoresist stripping composition, are generated after dry etching or ashing. However, it can be completely peeled off at a low temperature in a short time, and corrosion of semiconductor device members such as interlayer insulating materials and wiring materials can be suppressed.

  The fluorine compound used in the present invention is hydrofluoric acid, ammonium fluoride, acidic ammonium fluoride, cerium fluoride, silicon tetrafluoride, silicon fluoride, nitrogen fluoride, phosphorus fluoride, vinylidene fluoride, three Boron fluoride, borohydrofluoric acid, ammonium fluoroborate, monoethanolamine hydrofluoride, methylamine hydrofluoride, ethylamine hydrofluoride, propylamine hydrofluoride, tetramethylammonium fluoride, fluoro Fluorine compound salts such as tetraethylammonium fluoride, triethylmethylammonium fluoride, trimethylhydroxyethylammonium fluoride, tetraethoxyammonium fluoride, methyltriethoxyammonium fluoride, or lithium fluoride, sodium fluoride, sodium acid fluoride, fluorine Kariu , Acidic potassium fluoride, potassium fluorosilicate, potassium hexafluorophosphate, magnesium fluoride, calcium fluoride, strontium fluoride, barium fluoride, zinc fluoride, aluminum fluoride, stannous fluoride, fluorine Examples thereof include metal fluorine compounds such as lead fluoride and antimony trifluoride. Among them, preferred fluorine compounds are hydrofluoric acid, ammonium fluoride, acidic ammonium fluoride, tetramethylammonium fluoride, acidic sodium fluoride, sodium fluoride, or potassium fluoride. More preferred are hydrofluoric acid, ammonium fluoride, acidic ammonium fluoride, tetramethylammonium fluoride, and acidic sodium fluoride.

  The said fluorine compound used for this invention may be used individually or in combination of 2 or more types. The concentration range of the fluorine compound is 0.001 to 10% by weight, preferably 0.05 to 8% by weight, based on the photoresist stripping composition. If it is 0.001% by weight or less, the peeling rate of the photoresist layer, photoresist residue and titanium-derived residue is slow, and if it is 10% by weight or more, corrosion occurs in semiconductor device members such as interlayer insulating materials and wiring materials, It's not a good idea.

  Examples of the water-soluble organic solvent used in the present invention include lactones such as γ-butyrolactone, sulfoxides such as dimethyl sulfoxide, amides such as N, N-dimethylformamide and dimethylacetamide, nitriles such as acetonitrile and benzonitrile, Examples include alcohols such as methanol, ethanol, glycerin, ethylene glycol, diethylene glycol, and isopropanol; esters such as methyl acetate and ethyl acetate; ethers such as tetrahydrofuran, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, and dipropylene glycol monomethyl ether. . Particularly preferred water-soluble organic solvents are amides, alcohols, and glycol ethers, particularly preferably N, N-dimethylformamide, dimethylacetamide, ethanol, glycerin, ethylene glycol, diethylene glycol, glycol, diethylene glycol monomethyl ether. Dipropylene glycol monomethyl ether.

  The water-soluble organic solvents used in the present invention may be used alone or in combination of two or more. The water-soluble organic solvent has an effect of suppressing corrosion of the interlayer insulating material, the wiring material, etc. directly or indirectly. The concentration range of the mixed solvent composed of water and a water-soluble organic solvent is 1 to 96% by weight, preferably 30 to 90% by weight, based on the photoresist stripping solution composition. More preferably, it is 40 to 85% by weight. If it is 1% by weight or less, the effect of addition is hardly recognized, and if it is 96% by weight or more, the stripping rate of the photoresist layer, the photoresist residue and the titanium-derived residue is slow, which is not a good idea.

  The concentration range of nitric acid used in the present invention is 3 to 30% by weight, preferably 4 to 20% by weight, and more preferably 5 to 15% by weight with respect to the photoresist stripping solution composition. The nitric acid has the effect of improving the peelability of the photoresist layer, photoresist residue and titanium-derived residue. Further, in the range of 3% by weight or more, there is an effect of mainly suppressing the corrosion of the interlayer insulating material, the wiring material and the like. Even in the range of 3% by weight or less, although there is an effect of improving the peelability of the photoresist layer, the photoresist residue and the titanium-derived residue, the corrosion of the wiring material is particularly large, which is not a good measure.

  Phosphorus-containing compounds used in the present invention include phosphorous oxoacids such as phosphoric acid, phosphonic acid, and phosphinic acid, and phosphorous oxoacid ammonium salts such as ammonium phosphate, ammonium dihydrogen phosphate, and ammonium monohydrogen phosphate. Etc. Phosphoric acid, phosphonic acid and phosphinic acid are preferable, and phosphoric acid is particularly preferable.

  The phosphorus-containing compounds used in the present invention may be used alone or in combination of two or more. The phosphorus-containing compound has an effect of suppressing corrosion of the wiring material and the like. The concentration of the phosphorus-containing compound is in the range of 0.01 to 20% by weight, preferably 0.05 to 15% by weight, more preferably 0.1 to 10% by weight, based on the photoresist stripping solution composition. If it is 0.01% by weight or less, the effect of addition is hardly recognized, and if it is 20% by weight or more, it is not preferable because the peeling rate of the photoresist layer, the photoresist residue, and the titanium-derived residue becomes slow.

  When the acid contained in the photoresist stripping composition of the present invention is nitric acid alone, it is satisfactory in stripping of the photoresist layer, photoresist residue and titanium-derived residue, and anticorrosion of the interlayer insulating material. Although it is possible, the corrosion resistance of the wiring material is insufficient. By adding the phosphorus-containing compound, it is possible to specifically suppress the corrosion of the wiring material or the like. That is, by combining a plurality of additives having different characteristics, corrosion of semiconductor device members such as interlayer insulating materials and wiring materials can be more effectively suppressed.

  When the water in the composition evaporates and is concentrated during use of the photoresist stripping composition of the present invention, the reduced amount of water may be added. When water evaporates, the concentration of each component increases, and the peelability of the photoresist layer, the photoresist residue, and the titanium-derived residue decreases. However, by controlling the water concentration, the peelability of the photoresist layer, the photoresist residue, and the titanium-derived residue can be maintained (see Example 13). Therefore, the chemical solution can be circulated and used in the single wafer cleaning apparatus. On the other hand, the above-mentioned “fluorine compound-containing liquid comprising a fluorine compound and sulfonic acids” (Patent Document 5) and “an acidic fluorine compound-containing liquid combining a specific additive containing ammonium fluorosilicate and organic phosphonic acid” (patent Regarding literature 6), when water evaporates, the peelability of the photoresist layer, photoresist residue and titanium-derived residue decreases, and the corrosivity of semiconductor device members such as interlayer insulating materials and wiring materials increases. Moreover, even if the reduced amount of water is added, the peelability of the photoresist layer, the photoresist residue and the titanium-derived residue cannot be maintained, and further, the problem that the corrosivity of the semiconductor device member is increased occurs ( See Comparative Examples 20 and 22).

  Moreover, you may mix | blend the conventionally used additive with the photoresist stripping liquid composition of this invention in order to improve the performance of a photoresist stripping liquid composition. For example, in order to improve the wettability of the photoresist stripping composition, a compound having surface activity can be added. In addition, a compound having a chelating ability can be added in order to suppress particles or metal contamination adhering to the wafer after processing the wafer. Furthermore, a water-soluble polymer or the like may be added to suppress damage to the interlayer insulating material. These additives can be used if dissolved in the photoresist stripping composition of the present invention, and may be used alone or in combination of two or more.

  The photoresist stripping composition of the present invention can be applied by various methods such as immersion cleaning by batch method, spraying by single wafer method or spray cleaning. Further, the use time is appropriately determined depending on the cleaning method, and the use temperature is in a temperature range from room temperature to 90 ° C.

  The photoresist stripping composition of the present invention includes aluminum, aluminum alloy, copper, copper alloy, gold, platinum, titanium, titanium-tungsten, titanium nitride, tungsten, tantalum, tantalum compound, chromium, chromium oxide, chromium alloy, Semiconductor metal wiring materials such as ITO (indium-tin oxide), cobalt, insulating materials such as silicon, amorphous silicon, polysilicon, silicon oxide film, silicon nitride film, and ferroelectric materials such as strontium-bismuth-tantalum It can be used for a semiconductor device substrate having It can also be used for compound semiconductors such as gallium-arsenide, gallium-phosphorus, indium-phosphorus, and glass substrates for LCDs. Preferably, aluminum or an aluminum alloy is used for a semiconductor device substrate using a wiring material.

  The present invention will be described more specifically with reference to examples and comparative examples, but the present invention is not limited to these examples.

Example 1
FIG. 1 is a cross-sectional view of an aluminum alloy circuit element after performing dry etching using a photoresist layer as a mask to form an aluminum alloy (Al—Cu) wiring body 5 and further ashing and removing the photoresist layer with a plasma gas. Indicated. A silicon oxide film 2 is formed on the silicon substrate 1, an aluminum alloy wiring body 5 is formed thereon, and a photoresist residue 6 remains on the side wall. Titanium 3 and titanium nitride 4 exist as barrier metals. The above-mentioned aluminum alloy circuit element is applied to a photoresist stripping composition comprising 0.5% by weight of ammonium fluoride, 10% by weight of nitric acid, 1% by weight of phosphoric acid, 70% by weight of dipropylene glycol monomethyl ether and the remaining water at room temperature. After immersing for 100 seconds, rinsing with ultrapure water was performed, followed by drying. Thereafter, an electron microscope (SEM) observation was performed on the peelability of the photoresist residue remaining on the side wall and the corrosiveness of the semiconductor device member such as the interlayer insulating material and the wiring material. As a result, the photoresist residue 6 was completely peeled off, and no corrosion was observed in the silicon oxide film 2, titanium 3, titanium nitride 4, and aluminum alloy wiring body 5.
Note that the evaluation criteria for photoresist stripping by SEM observation are as follows.
A: Completely peeled off.
B: Not peeled off.
The evaluation of the corrosivity of the aluminum alloy is as follows.
A: Not corroded.
B: Corroded.
Evaluation of titanium corrosion is as follows.
A: Not corroded.
B: Corroded.
In addition, no corrosion was observed in any composition of silicon oxide film and titanium nitride.

Examples 1-6, Comparative Examples 1-7
The aluminum alloy circuit element shown in FIG. 1 was immersed for a predetermined time using the photoresist stripping composition described in Table 1, rinsed with ultrapure water, and dried. Then, electron microscope (SEM) observation was performed about the peelability of the photoresist residue which remain | survives on a side wall, and the corrosivity in the members of semiconductor devices, such as an interlayer insulation material and a wiring material, and the result was described in Table 1.
Further, no corrosion was observed in any composition of the silicon oxide film and titanium nitride.

（注）残部は水

(Note) The balance is water

Example 7
FIG. 2 shows a cross-sectional view of the via hole after dry etching is performed using the photoresist layer as a mask, a via hole is formed in the interlayer insulating layer, and the photoresist layer is removed by ashing with a plasma gas. A via hole is formed in the interlayer insulating layer 7, and a photoresist residue 6 and a titanium-derived residue 8 remain in the via hole. Titanium 3 and titanium nitride 4 exist as barrier metals. The via hole is immersed in a photoresist stripping composition composed of 1.0% by weight of ammonium fluoride, 7% by weight of nitric acid, 3% by weight of phosphoric acid, 70% by weight of dipropylene glycol monomethyl ether, and the remaining water at room temperature for 100 seconds. Then, rinsing was performed with ultrapure water and drying was performed. Thereafter, an electron microscope (SEM) observation was performed on the peelability of the photoresist residue 6 and the titanium-derived residue 8 remaining in the via hole, and the corrosivity of the titanium 3 and the interlayer insulating layer 7. As a result, the photoresist residue 6 and the titanium-derived residue 8 were completely peeled off, and the titanium 3 and the interlayer insulating layer 7 were not corroded.
In addition, the evaluation criteria regarding the peeling of the photoresist residue and titanium-derived residue by SEM observation are as follows.
A: Completely peeled off.
B: Not peeled off.
The evaluation of the corrosiveness of the interlayer insulating layer is as follows.
A: Not corroded.
B: Corroded.
Evaluation of the corrosiveness of titanium is as follows.
A: Not corroded.
B: Corroded.

Examples 7-12, Comparative Examples 8-17
After immersing the via hole shown in FIG. 2 for a predetermined time using the photoresist stripping composition described in Table 2, it is rinsed with ultrapure water, dried, and observed with an electron microscope (SEM). 2.

（注）残部は水

(Note) The balance is water

Example 13, Comparative Examples 18-22
Assuming that water evaporates when the chemical solution is circulated and used in the single wafer cleaning apparatus, 50 g of the photoresist stripping solution compositions of Example 1, Comparative Example 16, and Comparative Example 17 are put in a 100 g container, and the lid is covered. It was left open at 25 ° C. for 24 hours. The via hole shown in FIG. 2 was processed using the photoresist stripping composition after being left open or the photoresist stripping composition supplemented with water evaporated by being left open. Then, the electron microscope (SEM) observation was performed about the peelability of the photoresist residue 6 and the titanium-derived residue 8 remaining in the via hole, and the corrosiveness of the titanium 3 and the interlayer insulating layer 7, and the results are shown in Table 3. .

（注）残部は水

(Note) The balance is water

It is sectional drawing of the aluminum alloy circuit element after performing dry etching using a photoresist layer as a mask, forming the aluminum alloy (Al-Cu) wiring body 5, and also ashing and removing the photoresist layer by plasma gas. FIG. 5 is a cross-sectional view of a via hole after dry etching is performed using the photoresist layer as a mask, a via hole is formed in the interlayer insulating layer, and the photoresist layer is removed by ashing with a plasma gas.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Silicon substrate 2 Silicon oxide film 3 Titanium 4 Titanium nitride 5 Aluminum alloy 6 Photoresist residue 7 Interlayer insulation layer 8 Titanium origin residue

Claims (10)

  0.001 to 10% by weight of a fluorine compound, 3 to 30% by weight of nitric acid, 0.01 to 20% by weight of a phosphorus-containing compound, 1 to 96% by weight of a water-soluble organic solvent, and the balance being water A resist remover composition.   The resist stripping composition according to claim 1, wherein the fluorine compound is at least one selected from hydrofluoric acid, ammonium fluoride, acidic ammonium fluoride, tetramethylammonium fluoride, sodium fluoride, and potassium fluoride. .   The resist stripping solution composition according to claim 1, wherein the phosphorus-containing compound is at least one selected from phosphoric acid, phosphonic acid, phosphinic acid, ammonium phosphate, ammonium dihydrogen phosphate, and ammonium monohydrogen phosphate.   The resist stripping solution composition according to claim 1, wherein the water-soluble organic solvent is at least one selected from amides, alcohols, and glycol ethers.   The resist stripping composition according to claim 4, wherein the amide is N, N-dimethylformamide or dimethylacetamide.   The resist stripping composition according to claim 4, wherein the alcohol is at least one selected from the group consisting of ethanol, glycerin, ethylene glycol, and diethylene glycol.   The resist stripping solution composition according to claim 4, wherein the glycol ether is at least one selected from the group of diethylene glycol monomethyl ether and dipropylene glycol monomethyl ether.   The photoresist stripping composition according to claim 1, wherein the photoresist layer, the photoresist residue, and the titanium-derived residue are stripped in the wiring formation step of the semiconductor device.   In the wiring formation process of a semiconductor device, by processing with the resist stripping solution composition according to claim 1, using a single wafer cleaning device at a processing condition of 20 to 50 ° C and 30 to 300 seconds, a photoresist layer , A method for removing photoresist residue and titanium-derived residue.   The stripping method according to claim 9, wherein water corresponding to the evaporated water is replenished when the photoresist stripping composition is used.

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